JP3940758B2 - 不揮発性半導体記憶装置 - Google Patents

不揮発性半導体記憶装置 Download PDF

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Publication number
JP3940758B2
JP3940758B2 JP2006337208A JP2006337208A JP3940758B2 JP 3940758 B2 JP3940758 B2 JP 3940758B2 JP 2006337208 A JP2006337208 A JP 2006337208A JP 2006337208 A JP2006337208 A JP 2006337208A JP 3940758 B2 JP3940758 B2 JP 3940758B2
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Japan
Prior art keywords
memory cell
voltage
cell transistor
gate electrode
region
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Expired - Fee Related
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JP2006337208A
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Japanese (ja)
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JP2007081434A5 (https=
JP2007081434A (ja
Inventor
和裕 清水
誠一 有留
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Toshiba Corp
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Toshiba Corp
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Publication of JP2007081434A5 publication Critical patent/JP2007081434A5/ja
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  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)
  • Thin Film Transistor (AREA)
JP2006337208A 2006-12-14 2006-12-14 不揮発性半導体記憶装置 Expired - Fee Related JP3940758B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2006337208A JP3940758B2 (ja) 2006-12-14 2006-12-14 不揮発性半導体記憶装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2006337208A JP3940758B2 (ja) 2006-12-14 2006-12-14 不揮発性半導体記憶装置

Related Parent Applications (1)

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JP32594597A Division JP3959165B2 (ja) 1997-11-27 1997-11-27 不揮発性半導体記憶装置

Publications (3)

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JP2007081434A JP2007081434A (ja) 2007-03-29
JP2007081434A5 JP2007081434A5 (https=) 2007-05-17
JP3940758B2 true JP3940758B2 (ja) 2007-07-04

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ID=37941330

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JP2006337208A Expired - Fee Related JP3940758B2 (ja) 2006-12-14 2006-12-14 不揮発性半導体記憶装置

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Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101033224B1 (ko) 2009-01-06 2011-05-06 주식회사 하이닉스반도체 플래시 메모리소자 및 그 제조방법
US8648414B2 (en) 2011-07-01 2014-02-11 Micron Technology, Inc. Semiconductor structures including bodies of semiconductor material, devices including such structures and related methods
US11152568B2 (en) * 2019-06-27 2021-10-19 Taiwan Semiconductor Manufacturing Company, Ltd. Top-electrode barrier layer for RRAM
CN115881798A (zh) * 2023-01-29 2023-03-31 合肥新晶集成电路有限公司 半导体结构及其制备方法

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Publication number Publication date
JP2007081434A (ja) 2007-03-29

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