JP2007081359A - スピン−軌道結合誘導磁場を利用したスピントランジスター - Google Patents
スピン−軌道結合誘導磁場を利用したスピントランジスター Download PDFInfo
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- 230000005291 magnetic effect Effects 0.000 title claims description 33
- 230000005415 magnetization Effects 0.000 claims abstract description 33
- 239000000758 substrate Substances 0.000 claims abstract description 30
- 239000003302 ferromagnetic material Substances 0.000 claims abstract description 8
- 229910000673 Indium arsenide Inorganic materials 0.000 claims description 15
- RPQDHPTXJYYUPQ-UHFFFAOYSA-N indium arsenide Chemical compound [In]#[As] RPQDHPTXJYYUPQ-UHFFFAOYSA-N 0.000 claims description 15
- 230000008878 coupling Effects 0.000 claims description 13
- 238000010168 coupling process Methods 0.000 claims description 13
- 238000005859 coupling reaction Methods 0.000 claims description 13
- 238000005253 cladding Methods 0.000 claims description 12
- 230000005294 ferromagnetic effect Effects 0.000 claims description 12
- 239000004065 semiconductor Substances 0.000 claims description 10
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 claims description 7
- 239000000463 material Substances 0.000 claims description 5
- 229910003321 CoFe Inorganic materials 0.000 claims description 4
- 229910001030 Iron–nickel alloy Inorganic materials 0.000 claims description 4
- 229910052733 gallium Inorganic materials 0.000 claims description 4
- 229910052742 iron Inorganic materials 0.000 claims description 4
- 229910052748 manganese Inorganic materials 0.000 claims description 4
- 239000002184 metal Substances 0.000 claims description 4
- 229910052751 metal Inorganic materials 0.000 claims description 4
- 229910052759 nickel Inorganic materials 0.000 claims description 4
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 3
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 3
- 238000009987 spinning Methods 0.000 abstract 1
- 238000000034 method Methods 0.000 description 16
- 238000004519 manufacturing process Methods 0.000 description 9
- 230000005533 two-dimensional electron gas Effects 0.000 description 5
- 230000000694 effects Effects 0.000 description 3
- 230000005684 electric field Effects 0.000 description 3
- 230000001808 coupling effect Effects 0.000 description 2
- 230000005669 field effect Effects 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000000609 electron-beam lithography Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 230000005381 magnetic domain Effects 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 231100000989 no adverse effect Toxicity 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000000992 sputter etching Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66984—Devices using spin polarized carriers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F10/00—Thin magnetic films, e.g. of one-domain structure
- H01F10/08—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers
- H01F10/10—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers characterised by the composition
- H01F10/18—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers characterised by the composition being compounds
- H01F10/193—Magnetic semiconductor compounds
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/0843—Source or drain regions of field-effect devices
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F1/00—Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties
- H01F1/01—Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties of inorganic materials
- H01F1/40—Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties of inorganic materials of magnetic semiconductor materials, e.g. CdCr2S4
- H01F1/401—Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties of inorganic materials of magnetic semiconductor materials, e.g. CdCr2S4 diluted
- H01F1/404—Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties of inorganic materials of magnetic semiconductor materials, e.g. CdCr2S4 diluted of III-V type, e.g. In1-x Mnx As
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Abstract
【解決手段】 本発明によるスピントランジスターは、チャンネルが形成された基板部と;上記基板部上に相互離隔されて配置され磁化方向が相互同一強磁性体であるソース及びドレーンと;上記基板部上に形成され、上記チャンネルを通過する電子のスピン方向を調節するゲートを含み、上記ソース及びドレーンの磁化方向は上記チャンネルの長さ方向と垂直である。
【選択図】 図1
Description
ソース及びドレーンの磁化方向と平行または反平行に調節することが可能である。上記誘導磁場の方向が上記注入された電子のスピン方向と同一である場合(すなわち、平行の場合)上記トランジスターはオン(on)状態にあり、上記誘導磁場の方向が上記注入された電子のスピン方向と反対の場合(すなわち、反平行の場合)上記トランジスターはオフ(off)状態にあるようになる。
2、2' クレッディング層
3 電荷供給層
4 バッファ層
5 InP基板
6 InAsキャッピング層
7 InAs井戸層
8、8' 絶縁膜
10 半導体基板部
13 ソース
14 ドレーン
16 ゲート絶縁膜
17 ゲート
19、19' 漏れ磁界
Claims (17)
- チャンネルが形成された基板部と;
上記基板部上に相互離隔されて配置され磁化方向が相互同一強磁性体であるソース及びドレーンと;
上記基板部上に形成され、上記チャンネルを通過する電子のスピン方向を調節するゲートを含み、
上記ソース及びドレーンの磁化方向は上記チャンネルの長さ方向と垂直であることを特徴とするスピントランジスター。 - 上記基板部のチャンネルは量子井戸層で形成されることを特徴とする請求項1に記載のスピントランジスター。
- 上記量子井戸層はGaAs、InAs及びInGaAsからなるグループから選択された材料で形成されたことを特徴とする請求項2に記載のスピントランジスター。
- 上記ソースとドレーン中少なくとも一つは強磁性金属で形成されたことを特徴とする請求項1に記載のスピントランジスター。
- 上記強磁性金属はFe、Co、Ni、CoFe、NiFe及びこれらの組合せからなるグループから選択されることを特徴とする請求項4に記載のスピントランジスター。
- 上記ソースとドレーン中少なくとも一つは強磁性半導体で形成されたことを特徴とする請求項1に記載のスピントランジスター。
- 上記強磁性半導体は(Ga、Mn)Asであることを特徴とする請求項6に記載のスピントランジスター。
- 上記基板部は、ドーピングされない上部及び下部クレッディング層とその間に介在されたInAs量子井戸層を含むことを特徴とする請求項1に記載のスピントランジスター。
- 上記上部及び下部クレッディング層各々はInGaAs層とInAlAs層の2層構造を有する2重クレッディング層からなることを特徴とする請求項8に記載のスピントランジスター。
- 上記基板部は、上記下部クレッディング層の下に形成されたInAlAs電荷供給層をさらに含むことを特徴とする請求項8に記載のスピントランジスター。
- 上記基板部は、上記上部クレッディング層上に形成されたInAsキャッピング層をさらに含むことを特徴とする請求項8に記載のスピントランジスター。
- 上記基板部は両側部が除去されたリッジ構造を有し、上記リッジ構造によりチャンネルが限定されることを特徴とする請求項1に記載のスピントランジスター。
- 上記リッジ構造の両側部には平坦化のための絶縁膜が形成されたことを特徴とする請求項12に記載のスピントランジスター。
- 上記絶縁膜はSiO2またはTaO2で形成されたことを特徴とする請求項13に記載のスピントランジスター。
- オン-オフ動作を制御するため、スピン-軌道結合誘導磁場を利用し上記ゲート電圧の符号として電子のスピンを上記ソース及びドレーンの磁化方向と平行または反平行に調節することを特徴とする請求項1に記載のスピントランジスター。
- 上記誘導磁場の方向が上記ソースから注入された電子のスピン方向と同一な場合、上記トランジスターはオン状態にあり、
上記誘導磁場の方向が上記ソースから注入された電子のスピン方向と反対の場合、上記トランジスターはオフ状態にあるようになることを特徴とする請求項15に記載のスピントランジスター。 - 上記トランジスターのオン-オフ動作を制御するため、オフ状態においてはゲート電圧を除去しランダムなスピン電子が流れるようにし、オン状態においては上記ソースから注入された電子のスピン情報が維持される方向にゲート電圧を加えることを特徴とする請求項1に記載のスピントランジスター。
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KR1020050085717A KR100619300B1 (ko) | 2005-09-14 | 2005-09-14 | 스핀-궤도 결합 유도 자장을 이용한 스핀 트랜지스터 |
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US (1) | US7307299B2 (ja) |
EP (1) | EP1764838B1 (ja) |
JP (1) | JP2007081359A (ja) |
KR (1) | KR100619300B1 (ja) |
Cited By (4)
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JP2007165786A (ja) * | 2005-12-16 | 2007-06-28 | Toshiba Corp | 電界効果トランジスタ、集積回路、及びメモリ |
JP2008166689A (ja) * | 2007-01-04 | 2008-07-17 | Korea Inst Of Science & Technology | 漏れ磁場を用いたスピントランジスタ |
US9082497B2 (en) | 2011-03-22 | 2015-07-14 | Renesas Electronics Corporation | Magnetic memory using spin orbit interaction |
JP2018117104A (ja) * | 2017-01-20 | 2018-07-26 | 国立研究開発法人理化学研究所 | スピン流生成方法及びスピン流生成装置 |
Families Citing this family (23)
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WO2005104240A1 (en) | 2004-04-27 | 2005-11-03 | Agency For Science, Technology And Research | Magneto-electric field effect transistor for spintronic applications |
KR100709395B1 (ko) * | 2006-06-23 | 2007-04-20 | 한국과학기술연구원 | 강자성체를 이용한 스핀 트랜지스터 |
JP4455558B2 (ja) | 2006-09-08 | 2010-04-21 | 株式会社東芝 | スピンmosfet |
KR100855105B1 (ko) * | 2007-06-14 | 2008-08-29 | 한국과학기술연구원 | 수직자화를 이용한 스핀 트랜지스터 |
KR100929315B1 (ko) * | 2007-10-31 | 2009-11-27 | 주식회사 하이닉스반도체 | 수직형 스핀 트랜지스터 및 그 제조 방법 |
US20090141409A1 (en) * | 2007-12-03 | 2009-06-04 | Santos Tiffany S | Spin filter spintronic devices |
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US8013406B2 (en) * | 2008-01-02 | 2011-09-06 | The Hong Kong University Of Science And Technology | Method and apparatus for generating giant spin-dependent chemical potential difference in non-magnetic materials |
KR101009727B1 (ko) * | 2008-10-02 | 2011-01-19 | 한국과학기술연구원 | 이중 전하 공급층 구조를 이용한 스핀 트랜지스터 |
KR101016437B1 (ko) * | 2009-08-21 | 2011-02-21 | 한국과학기술연구원 | 스핀 축적과 확산을 이용한 다기능 논리 소자 |
KR101084019B1 (ko) * | 2010-05-12 | 2011-11-16 | 한국과학기술연구원 | 상보성 스핀 트랜지스터 논리회로 |
KR101084020B1 (ko) | 2010-05-18 | 2011-11-16 | 한국과학기술연구원 | 이중 전하 공급층 구조를 이용한 스핀 트랜지스터 |
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US9105830B2 (en) | 2012-08-26 | 2015-08-11 | Samsung Electronics Co., Ltd. | Method and system for providing dual magnetic tunneling junctions using spin-orbit interaction-based switching and memories utilizing the dual magnetic tunneling junctions |
KR101438773B1 (ko) | 2012-12-18 | 2014-09-15 | 한국과학기술연구원 | 자기장 제어 가변형 논리 소자 및 그 제어 방법 |
US9837602B2 (en) * | 2015-12-16 | 2017-12-05 | Western Digital Technologies, Inc. | Spin-orbit torque bit design for improved switching efficiency |
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US11264476B2 (en) * | 2016-12-27 | 2022-03-01 | Intel Corporation | Magnetic contacts for spin qubits |
US11910728B2 (en) * | 2019-07-23 | 2024-02-20 | The Trustees Of Princeton University | Flopping-mode electric dipole spin resonance |
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- 2005-09-14 KR KR1020050085717A patent/KR100619300B1/ko not_active IP Right Cessation
- 2005-12-15 US US11/305,500 patent/US7307299B2/en active Active
- 2005-12-19 EP EP05112407.1A patent/EP1764838B1/en not_active Not-in-force
- 2005-12-22 JP JP2005370568A patent/JP2007081359A/ja active Pending
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Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2007165786A (ja) * | 2005-12-16 | 2007-06-28 | Toshiba Corp | 電界効果トランジスタ、集積回路、及びメモリ |
JP4599285B2 (ja) * | 2005-12-16 | 2010-12-15 | 株式会社東芝 | 電界効果トランジスタ、集積回路、及びメモリ |
JP2008166689A (ja) * | 2007-01-04 | 2008-07-17 | Korea Inst Of Science & Technology | 漏れ磁場を用いたスピントランジスタ |
US9082497B2 (en) | 2011-03-22 | 2015-07-14 | Renesas Electronics Corporation | Magnetic memory using spin orbit interaction |
US9508923B2 (en) | 2011-03-22 | 2016-11-29 | Renesas Electronics Corporation | Magnetic memory using spin orbit interaction |
JP2018117104A (ja) * | 2017-01-20 | 2018-07-26 | 国立研究開発法人理化学研究所 | スピン流生成方法及びスピン流生成装置 |
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US20070059877A1 (en) | 2007-03-15 |
US7307299B2 (en) | 2007-12-11 |
KR100619300B1 (ko) | 2006-09-06 |
EP1764838B1 (en) | 2016-03-16 |
EP1764838A3 (en) | 2007-12-19 |
EP1764838A2 (en) | 2007-03-21 |
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