JP2007059694A - Suction apparatus, manufacturing method therefor, and vacuum processing apparatus - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a suction apparatus that has a large gradient force and a large vacuum suction force. <P>SOLUTION: An insulative base film 22 is formed on a base 21, and a first and a second electrodes 23a, 23b are formed on the base film 22. The base film between the first and second electrodes 23a, 23b is removed halfway from the surface side to form a suction groove 26. The suction groove 26 can be formed deep even if the first and second electrodes 23a, 23b and the film thickness of protective films 24 covering the surface of the electrodes are thin. <P>COPYRIGHT: (C)2007,JPO&INPIT

Description

  The present invention relates to an adsorption apparatus and a vacuum processing apparatus using the adsorption apparatus, and more particularly to an adsorption apparatus capable of adsorbing an insulating substrate and a vacuum processing apparatus using the adsorption apparatus.

  Conventionally, a suction device is used to hold a substrate in a vacuum apparatus. In the case of holding a conductive substrate (semiconductor substrate or the like), a capacitor can be formed between the holding object and held by its capacitance.

However, in the case of an insulating substrate (such as a glass substrate) such as a substrate of a liquid crystal display device, a capacitor cannot be formed. Therefore, the insulating substrate is placed in a non-uniform electric field formed by an electrode and held by a gradient force. (Japanese Patent Laid-Open No. 2001-35907).
An attracting device using electrostatic attracting force has already been used for production of a liquid crystal display device having a large substrate, and is an important configuration in a liquid crystal dropping and laminating device (FIG. 8 of JP-A-2002-229044). .

In an actual device, the glass substrate is first sucked and held in the atmosphere by vacuum suction, and after the glass substrate is carried into the vacuum chamber, the holding power of the glass substrate is changed from the vacuum suction force to the static electricity. It is necessary to switch to force or gradient force. Therefore, it is necessary to generate two types of adsorption forces with a single adsorption device.
Recently, a display device such as a liquid crystal display device has been increased in size, and a strong holding force for holding a large glass substrate is required.

The code | symbol 111 of FIG. 9 has shown the adsorption | suction apparatus of the prior art. Reference numeral 111a is a plan view for explaining the internal structure, and reference numerals 111b and 111c are sectional views taken along lines FF and GG, respectively.
In the adsorption device 111, first and second electrodes 123a and 123b are arranged on an insulating substrate 121.

The first and second electrodes 123a and 123b are spaced apart from each other at a predetermined interval, and the adsorption device 111 includes a surface of the first and second electrodes 123a and 123b and an insulating substrate 121 positioned therebetween. An insulating protective film 124 that covers the surface is formed.
In the protective film 124, an adsorption groove 126 made of a bottomed groove is formed.
An exhaust hole 127 that penetrates to the back surface of the substrate 121 is formed in a part of the bottom surface of the suction groove 126.

  The exhaust hole 127 is connected to an evacuation system, and the surface on which the first and second electrodes 123a and 123b of the adsorption device 111 are formed is directed vertically downward so that the protective film 124 on the surface is an adsorption target such as a glass substrate. Adhere closely. Then, when the atmosphere in the adsorption groove 126 is evacuated from the exhaust hole 127, the object to be adsorbed is vacuum adsorbed on the surface of the adsorption device 111 and is held by the vacuum adsorption force.

  When a voltage is applied between the first and second electrodes 123a and 123b, the object to be adsorbed is placed in an electric field formed between the first and second electrodes 123a and 123b, and is applied to the adsorption device 111 by a gradient force. Adsorbed.

Next, when the inside of the vacuum chamber is evacuated, the vacuum adsorption force disappears and the object to be adsorbed is held by the gradient force.
When the gradient force is generated, it is advantageous that the distance between the glass substrate to be attracted and the electrode is short, but the pattern of the attracting groove 126 and the patterns of the first and second electrodes 123a and 123b are mutually independent. Therefore, the suction groove 126 and the first and second electrodes 123a and 123b intersected each other.

FIG. 10A shows the pattern of the suction groove 126, and FIG. 10B shows the pattern of the first and second electrodes 123a and 123b.
As the suction groove 126 is deeper, the vacuum suction force becomes stronger. For this reason, if the protective film 124 is made thicker, the gradient force becomes weaker.

Since a high voltage is applied to the first and second electrodes 123 a and 123 b, it is necessary to cover the first and second electrodes 123 a and 123 b with an insulating protective film 124. not exposed on the bottom, first, to the second electrode 123a, the thickness T ₁₂ of the protective film 124 on 123b is ensured, the depth D ₁₁ of the suction grooves 126, first, second electrodes 123a, it is necessary to sufficiently shallower than the thickness T ₁₁ of the protective film 124 on 123b.

The depth of the suction groove 126 is required to be at least 30 μm. To obtain a sufficient vacuum suction force, a depth of 100 to 150 μm is desirable. On the other hand, in order to increase the gradient force, the film of the protective film 124 When the thickness was 300 μm or less, the depth of the suction groove 126 was about 50 μm, and the vacuum suction force was weak.
JP 2001-35907 A Japanese Patent Laid-Open No. 2002-229044

 The present invention was created to solve the above-described problems of the prior art, and it is an object of the present invention to provide an adsorption device that can increase the gradient force and the vacuum adsorption force on an insulating substrate.

In order to solve the above problems, the present invention includes a substrate having an insulating surface, a conductive material disposed on a flat surface of the substrate, and the conductive material, and different voltages are applied to the substrate. Connecting the first and second electrodes, the insulating protective film covering the surfaces of the first and second electrodes, the suction groove positioned between the first and second electrodes, and the suction groove The suction groove is connected to a vacuum exhaust system, and an object to be adsorbed is disposed on the protective film, and when the gas in the adsorption groove is evacuated from the exhaust hole, the object to be adsorbed is An adsorption device configured to be adsorbed on the protective film by a vacuum adsorption force, and to adsorb the object to be adsorbed on the protective film by a gradient force when a voltage is applied between the first and second electrodes. The bottom surface of the suction groove is the first and second electrodes Lower than the bottom surface, is configured adsorber so as to be located inside the substrate.
The present invention also includes a substrate, a conductive material disposed on a flat surface of the substrate, the first and second electrodes configured with the conductive material, to which different voltages are applied, An insulating protective film covering the surfaces of the first and second electrodes, an adsorption groove positioned between the first and second electrodes, and connected to the adsorption groove, and the adsorption groove is connected to a vacuum exhaust system When an object to be adsorbed is disposed on the protective film and the gas in the adsorption groove is evacuated from the exhaust hole, the object to be adsorbed is adsorbed on the protective film by a vacuum adsorption force. The adsorption device is configured such that when a voltage is applied between the first and second electrodes, the adsorption object is adsorbed on the protective film by a gradient force, and the substrate is a metal substrate body And an insulating base film formed on the surface of the substrate body. And, the first, second electrodes are disposed in close contact to the base film,
In the suction device, the base film is exposed at the bottom of the suction groove.
Further, the present invention is the suction apparatus configured such that the bottom portion of the suction groove is lower than the surface of the base film, and the lower portion of the suction groove is located inside the substrate.
Moreover, this invention is an adsorption | suction apparatus with which the said adsorption | suction groove | channel was enclosed with the said electroconductive material.
Moreover, this invention is an adsorption | suction apparatus with which the said adsorption | suction groove | channel was enclosed by said 1st or said 2nd electrode.
Further, the present invention is a manufacturing method for manufacturing any one of the above adsorption devices, the step of forming a film of the conductive material on the surface of a substrate having an insulating surface, and the film of the conductive material Patterning the first and second electrodes by patterning, forming the protective film on the surfaces of the first and second electrode films, patterning the protective film and the substrate, In the manufacturing method of the suction device, a suction groove whose bottom is lower than the surface of the substrate is formed at a position between the first and second conductive films, and a lower portion of the suction groove is positioned inside the substrate.

  The present invention includes a vacuum chamber and any one of the suction devices described above, and the suction device is a vacuum processing device that receives the suction object from a handler configured to be able to enter and exit the vacuum chamber.

  An adsorption device with strong vacuum adsorption force and gradient force is obtained.

The code | symbol 10 of FIG. 7 has shown the vacuum processing apparatus of this invention.
The vacuum processing apparatus 10 includes a vacuum chamber 41 and a first example of the adsorption device 1 of the present invention (or other examples of adsorption devices 2 and 3 to be described later).

  A high vacuum exhaust system 42 and a low vacuum exhaust system 43 are provided outside the vacuum chamber 41. The vacuum chamber 41 is connected to a high vacuum exhaust system 42 via a valve 45, and when the high vacuum exhaust system 42 is operated to open the valve 45, the inside of the vacuum chamber 41 is vacuum exhausted to a high vacuum atmosphere. It is configured to be able to.

  The adsorption device 1 is connected to a high vacuum exhaust system 42 and a low vacuum exhaust system 43 via a switch 44. A three-way valve is provided in the switch 44, and the vacuum chamber 41 is configured to be connected to either the high vacuum exhaust system 42 or the low vacuum exhaust system 43 by switching the three-way valve. .

The structure of the adsorption device 1 is shown in FIG. Reference numeral 1a in the figure is a plan view for explaining the internal structure, and reference numerals 1b and 1c are sectional views taken along lines AA and BB, respectively.
The suction device 1 has a plate-like substrate 20.
The substrate 20 includes a base 21 made of a metal plate and an insulating base film 22 formed on the surface of the base 21 so that the surface of the substrate 20 has an insulating property. .

  On the surface of the substrate 20, first to third electrodes 23a, 23b, and 23c made of a patterned conductive material film are disposed. The bottom surfaces of the first to third electrodes 23 a to 23 c are in close contact with the surface of the base film 22.

  The first to third electrodes 23a to 23c may be formed by applying a film of a conductive material having electrical conductivity, or formed by sputtering or vapor deposition, and then patterned by etching or the like. it can. Alternatively, the first to third electrodes 23a to 23c can be configured by applying a conductive material film directly patterned by screen printing.

The first to third electrodes 23a to 23c are arranged at a predetermined interval from each other, and the surface of the substrate 20 (here, the base film 22) is located between the first to third electrodes 23a to 23c.
The interval between the first to third electrodes 23a to 23c is 2 mm or less, and the width of the first to third electrodes 23a to 23c is 4 mm or less.

  The first and second electrodes 23a and 23b have, for example, comb-like shapes and are arranged to engage with each other. The third electrode 23c has a ring shape and is not in contact with the first and second electrodes 23a and 23b, and surrounds the first and second electrodes 23a and 23b.

An insulating protective film 24 is formed on the surfaces of the first to third electrodes 23a to 23c, and an adsorption groove 26 is disposed between the first to third electrodes 23a to 23c.
The suction groove 26 is formed by partially removing a portion of the surface of the substrate 20 located between the first to third electrodes 23 a to 23 c, and the bottom surface of the suction groove 26 is inside the base film 22. Is located.

  That is, the bottom surface of the suction groove 26 is set lower than the bottom surfaces of the first to third electrodes 23a to 23c. Therefore, the base film 22 is formed thick and the bottom surface of the suction groove 26 is deepened. Even if the first to third electrodes 23a to 23c and the protective film 24 are thinned, the adsorption groove 26 having a depth of 50 μm or more can be obtained.

A part of the adsorption groove 26 is formed wider than the shortest distance between the first and second electrodes 23 a and 23 b, and the exhaust gas penetrating to the back surface of the substrate 20 is formed on the bottom surface of the wide portion. A hole 27 is provided.
The exhaust hole 27 is connected to a pipe at the back surface portion of the substrate 20 and is connected to the switch 44 described above by the pipe.

Reference numeral 15 in FIG. 7 denotes an insulating object to be adsorbed such as a glass substrate. The adsorbing procedure will be described. First, the adsorbing device 1 is arranged in the vacuum chamber 41 so that the protective film 24 faces vertically downward. Then, the object to be adsorbed is placed on the handler 19 and is sucked and moved by vacuum suction, is carried into the vacuum chamber 41, and is stationary under the suction device 1.
Then, the handler 19 is raised, the suction object 15 is brought close to the suction device 1 and brought into contact with the suction device 1.

  The heights of the protective films 24 on the first to third electrodes 23 a to 23 c are equal to each other, and the protective films 24 on the first to third electrodes 23 a to 23 c of the adsorption device 1 are the objects to be adsorbed 15. Simultaneously touch the surface.

  The suction groove 26 is surrounded by the third electrode 23c. When the suction object 15 is in close contact with the suction device 1, the suction groove 26 is covered with the suction object 15, and the suction groove 26 The interior of 26 is cut off from the atmosphere around the adsorption device 1.

  When the suction device 1 is connected to the low vacuum exhaust system 43 by the switch 44 and the inside of the suction groove 26 is evacuated by the low vacuum exhaust system 43 in a state where the suction target 15 and the suction device 1 are in close contact, the suction groove The gas inside 26 is evacuated and reduced in pressure to a fraction of a pressure.

The ambient atmosphere around the adsorption object 15 and the adsorption device 1 is atmospheric pressure, and the adsorption object 15 is vacuum adsorbed by the adsorption device 1 due to the differential pressure with the inside of the adsorption groove 26.
When the vacuum suction of the handler 19 is released and lowered, the suction object 15 is held by the suction device 1 by the vacuum suction force of the suction device 1 (FIG. 8).

A wiring (not shown) is inserted through the substrate 20 from the back or side surface, and the first to third electrodes 23a to 23c are connected to the power supply device 48 through the wiring.
The vacuum chamber 41 is connected to the ground potential, operates the power supply device 48, and applies a voltage to the first and second electrodes 23a and 23b.

Voltages having opposite polarities are applied to the first and second electrodes 23a and 23b. That is, when a positive voltage is applied to the first electrode 23a, a negative voltage is applied to the second electrode 23b. Conversely, when a negative voltage is applied to the first electrode 23a, a positive voltage is applied to the second electrode 23b. Apply voltage.
The third electrode 23c is short-circuited with either the first electrode 23a or the second electrode 23b, and the same voltage as that of the first or second electrode 23a, 23b is applied.

  When a voltage is applied between the first and second electrodes 23a and 23b, a gradient force is generated by the electric field formed therebetween. In addition to the vacuum suction force, a gradient force is also applied to the insulating suction object 15.

  The gradient force formed here is large enough to hold the adsorption target 15 alone. After the gradient force is applied to the adsorption target 15, the vacuum chamber 41 is connected to the high vacuum exhaust system 42, and the high The inside of the vacuum chamber 41 is evacuated by the evacuation system 42.

  When the inside of the vacuum chamber 41 is evacuated by the high vacuum evacuation system 42 and the pressure is reduced, the differential pressure between the inside of the adsorption groove 26 and the periphery of the adsorption device 1 becomes small, and the vacuum adsorption force of the adsorption device 1 disappears. To do.

  When the pressure inside the vacuum chamber 41 becomes lower than the pressure inside the adsorption groove 26 due to evacuation, the adsorption target 15 is removed from the adsorption device 1 instead of the adsorption force by the residual gas in the adsorption groove 26. A repulsive force that causes separation will occur.

  In the present invention, when the inside of the vacuum chamber 41 is evacuated by the high vacuum evacuation system 42, the switch 44 switches the connection of the adsorption device 1 from the low vacuum evacuation system 43 to the high vacuum evacuation system 42. The vacuum chamber 41 is evacuated together with the high vacuum evacuation system 42. In this case, the inside of the suction groove 26 can be evacuated to a lower pressure than by the low vacuum exhaust system 43, and the inside of the vacuum chamber 41 and the suction groove 26 is evacuated together by the same high vacuum exhaust system 42. No force is generated, and the suction target 15 is maintained in the suction device 1 by the gradient force.

  When the vacuum processing apparatus 10 is a sputtering apparatus or a vapor deposition apparatus, a target and a vapor deposition source are arranged in the vacuum chamber 41, and a thin film is formed while the adsorption target 15 is held by the adsorption apparatus 1.

  When the vacuum processing apparatus 10 is a panel sealing apparatus, the adsorption object 15 held by the adsorption apparatus 1 is aligned with and bonded to another substrate disposed in the vacuum chamber 41.

  As described above, in the adsorption device 1 of the present invention, even if the first to third electrodes 23a to 23c and the protective film 24 thereon are thinned, the base film 22 is made thick, and the adsorption groove By deepening the portion 26 below the surface of the base film 22, the suction groove 26 can be deepened to 50 μm or more. Usually, it is 100 micrometers-150 micrometers.

By deepening the suction groove 26, a strong vacuum suction force is expressed, and the high vacuum exhaust system 42 makes it easy for the residual gas inside the suction groove 26 to be evacuated, so that a repulsive force is hardly generated.
On the other hand, when the protective film 24 is made thinner, the gradient force becomes stronger, so that the adsorption device 1 having both strong vacuum adsorption force and gradient force can be obtained.

Further, since the adsorption groove 26 is surrounded by the third electrode 23c, the adsorption groove 26 is blocked from the external atmosphere, and no gas enters the adsorption groove 26 from the external atmosphere. In this case, the surface height of the protective film 24 on the first and second electrodes 23a and 23b may be lower than the surface height of the protective film 24 on the third electrode 23c.
The electric field strength between the first and second electrodes 23a and 23b should be as large as possible without causing dielectric breakdown, and it is desirable to form an electric field having an intensity of 3 × 10 ⁶ V / m or more.
About the protective film 24, the thicker one has a longer life but the gradient force becomes weaker. Therefore, a thickness of 100 μm or less is preferable.

Next, another example of the present invention will be described.
About the adsorption | suction apparatus 2 and 3 of the following 2nd example and the 3rd example, the same code | symbol is attached | subjected to the same member as the adsorption apparatus 1 of a 1st example, and description is abbreviate | omitted.

  The adsorption device 1 of the first example has the third electrode 23c that is separated from the first and second electrodes 23a and 23b, and the adsorption groove 26 is surrounded by the third electrode 23c.

In the adsorption device 2 of the second example of FIG. 2, the third electrode is not provided, and the adsorption groove 26 is surrounded by the first or second electrode (the second electrode 23b in the adsorption device 12). Yes.
2 is a plan view for explaining the internal structure of the suction device 2 of the second example, and the reference numerals 2b and 2c are sectional views taken along the line CC and DD.

  In the suction devices 1 and 2 of the first and second examples, the inside of the suction groove 26 is separated from the external atmosphere in the state where the suction target 15 is covered. It may be connected to the atmosphere.

  In the suction device 3 of the third example in FIG. 3, the suction groove 26 is not surrounded by electrodes, and the periphery of the suction groove 26 is more than the portion where the first and second electrodes 23 a and 23 b are located. The thickness is reduced by the thickness of the second electrodes 23a and 23b.

  However, if the metal thin film formed by sputtering or vapor deposition is patterned to form the first and second electrodes 23a and 23b, the film thickness can be made very thin. For example, it can be 1 μm or less. Therefore, when the adsorption object 15 is arranged on the adsorption device 3 and the inside of the adsorption groove 26 is evacuated, the amount of gas flowing from the periphery of the adsorption groove 26 into the adsorption groove 26 is small, and the vacuum adsorption force Will not drop.

In the suction device 3 of the third example, the height of the region surrounding the suction groove 26 is lower than the height of the portion where the first and second electrodes 23a and 23b are located. If a groove is formed only inside 23a, 23b, the end portion 28 of the region sandwiched between the first and second electrodes 23a, 23b becomes the end portion of the adsorption groove 26, and only from this end portion 28, not the periphery. Since gas flows in, the amount of inflow becomes even smaller.
The exhaust hole 27 may be provided at a position as far as possible from the region where the gas flows, and the conductance of the gas flow may be reduced.

Next, an example of the manufacturing process of the adsorption devices 1 to 3 of the present invention will be described.
As shown in FIG. 4A, first, an insulating base film 22 is formed on a base 21 made of a metal plate to constitute a substrate 20. The base film 22 may be a ceramic plate such as alumina, silicon dioxide or silicon nitride, or a polyimide resin plate or film.

  Next, a conductive film 33 is formed on the base film 22 as shown in FIG. The conductive film 33 can be formed by applying a conductive paste, sticking a metal foil, a sputtering method, a vapor deposition method, or the like. It is not limited to metals, and may be an organic film or an inorganic film as long as it has conductivity.

  Next, the conductive film 33 is patterned into a desired shape to form first and second electrodes (and a third electrode if necessary). FIG. 2C shows the state, and reference numeral 23 indicates first to third electrodes. The base film 22 is exposed between the first to third electrodes 23.

Next, as shown in FIG. 4D, an insulating protective film 34 is formed on the surface of the substrate 20 on which the first to third electrodes 23 are disposed.
A resist film is formed on the protective film 34, the resist film is patterned, and the protective film 34 located between the first to third electrodes 23 is exposed as shown in FIG. The protective film 34 on the third electrode 23 is covered with a resist 35.
The exposed portion of the protective film 34 is etched using the resist 35 as a mask.

Here, as shown in FIG. 5F, after removing all the thickness direction of the protective film 34 and halfway along the surface in the depth direction of the underlying film 22 just below it, as shown in FIG. When the resist 35 is removed, the suction groove 26 whose bottom surface is located below the surface of the base film 22 is obtained. The bottom surface of the suction groove 26 does not reach the base 21, and the base film 22 is exposed on the bottom surface.
Note that after the protective film 24 is etched, the resist 35 may be removed, and the base film 22 may be etched using the protective film 24 as a mask.

  The height from the surface of the base film 22 to the surface of the protective film 24 on the first or second electrode 23, that is, the film thickness of the first and second electrodes 23 and the film of the protective film 24 thereon. When the total film thickness is large, as shown in FIG. 5, the deep adsorption groove 26 ′ is obtained even if the base film 22 is exposed on the bottom surface without etching the base film 22.

When the total thickness of the first and second electrodes 23 and the protective film 24 is larger, as shown in FIG. 6A, the protective film 24 is etched halfway in the depth direction to form the adsorption groove 26. Thereafter, the resist 35 is removed, and a deep suction groove 26 ″ where the protective film 24 is exposed can be formed on the bottom surface, as shown in FIG.
In each of the above examples, the substrate 20 is constituted by a laminated body of the metal base 21 and the base film 22, but the substrate may be constituted by an insulating plate.

After forming the thick protective film 24, the protective film is etched leaving the portions on the first to third electrodes 23a to 23c, so that a deeper adsorption groove 26 can be formed.
In addition, in the top view of the adsorption | suction apparatuses 1-3 of each said example, the pattern of the 1st-3rd electrodes 23a-23c is simplified rather than actual.

First example of adsorption apparatus of the present invention Adsorption device of the second example of the present invention The adsorption device of the third example of the present invention (a)-(g): The figure for demonstrating the manufacturing process of the adsorption | suction apparatus of this invention Example of an adsorption device that does not etch the underlying film (a), (b): The figure for demonstrating the process in the case of leaving a protective film on the bottom face of an adsorption | suction groove | channel. FIG. (1) for explaining a vacuum processing apparatus using the adsorption apparatus of the present invention FIG. (2) for explaining a vacuum processing apparatus using the adsorption apparatus of the present invention Prior art adsorption device (a): The pattern of the adsorption groove (b): The electrode pattern

Explanation of symbols

DESCRIPTION OF SYMBOLS 10 ... Vacuum processing apparatus 1-3 ... Adsorption | suction apparatus 15 ... Adsorption object 20 ... Substrate 21 ... Base | substrate 22 ... Base film 23a ... 1st electrode 23b ... 2nd electrode 24 ... Protection Membrane 26 ... Adsorption groove 27 ... Exhaust hole 42, 43 ... Vacuum exhaust system

Claims (7)

A substrate having an insulating surface;
A conductive material disposed on a flat surface of the substrate;
First and second electrodes made of the conductive material to which different voltages are applied;
An insulating protective film covering the surfaces of the first and second electrodes;
A suction groove located between the first and second electrodes;
An exhaust hole connected to the suction groove and connecting the suction groove to a vacuum exhaust system;
When an object to be adsorbed is disposed on the protective film, and the gas in the adsorption groove is evacuated from the exhaust hole, the object to be adsorbed is adsorbed on the protective film by a vacuum adsorption force,
When the voltage is applied between the first and second electrodes, the adsorption object is configured to be adsorbed on the protective film by a gradient force,
A suction device configured such that a bottom surface of the suction groove is lower than bottom surfaces of the first and second electrodes and is located inside the substrate. A substrate,
A conductive material disposed on a flat surface of the substrate;
First and second electrodes made of the conductive material to which different voltages are applied;
An insulating protective film covering the surfaces of the first and second electrodes;
A suction groove located between the first and second electrodes;
An exhaust hole connected to the suction groove and connecting the suction groove to a vacuum exhaust system;
When an object to be adsorbed is disposed on the protective film, and the gas in the adsorption groove is evacuated from the exhaust hole, the object to be adsorbed is adsorbed on the protective film by a vacuum adsorption force,
When the voltage is applied between the first and second electrodes, the adsorption object is configured to be adsorbed on the protective film by a gradient force,
The substrate is a metal substrate body,
An insulating base film formed on the surface of the substrate body;
The first and second electrodes are arranged in close contact with the base film,
An adsorption device in which the base film is exposed at the bottom of the adsorption groove.   The suction device according to claim 2, wherein a bottom portion of the suction groove is lower than a surface of the base film, and a lower portion of the suction groove is positioned inside the substrate.   The adsorption device according to any one of claims 1 to 3, wherein the adsorption groove is surrounded by the conductive material.   The suction device according to claim 4, wherein the suction groove is surrounded by the first or second electrode. A manufacturing method for manufacturing the adsorption device according to any one of claims 1 to 4,
Forming a film of the conductive material on the surface of the substrate having an insulating surface;
Patterning the conductive material film to form the first and second electrodes;
Forming the protective film on the surfaces of the first and second electrode films;
The protective film and the substrate are patterned, and a suction groove whose bottom is lower than the surface of the substrate is formed at a position between the first and second conductive films, and a lower portion of the suction groove is formed on the substrate. A manufacturing method of a suction device located inside.   A vacuum processing system comprising: a vacuum chamber; and the suction device according to any one of claims 1 to 5, wherein the suction device receives the object to be suctioned from a handler configured to be able to enter and exit the vacuum chamber. apparatus.

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