JP2004311765A5 - - Google Patents

Claims (15)

A substrate,
A small tile-shaped element that is affixed to the substrate and is composed of a small tile-shaped element;
An insulating material provided at a portion that becomes a path of wiring for electrically connecting the micro tile-shaped element and the substrate, and includes at least a part of an upper surface and a side surface of the micro tile-shaped element;
And a wiring provided so as to cross at least an upper surface of the insulator.   2. The semiconductor device according to claim 1, wherein the insulator is a part of the substrate that serves as a path for the wiring, and is also provided near a side surface of the micro tile element.   The semiconductor device according to claim 1, wherein the insulator is made of any one of resin, glass, and ceramic.   The semiconductor device according to claim 1, wherein the insulator is made of silicon oxide.   The micro tile-like element includes at least one of a surface emitting laser, a light emitting diode, a photodiode, a phototransistor, a high electron mobility transistor, a heterobipolar transistor, an inductor, a capacitor, and a resistor. The semiconductor device according to any one of 1 to 4. The micro tile element has a surface emitting laser,
6. The wiring according to claim 1, wherein the wiring electrically connects an anode electrode or a cathode electrode of the surface emitting laser and an electrode or an element provided on the substrate. A semiconductor device according to 1.   An electronic apparatus comprising the semiconductor device according to claim 1. A small tile-like element is attached to the substrate,
Forming the insulator so as to cross a desired portion of the side surface of the micro tile element;
A method of manufacturing a semiconductor device, comprising forming a wiring made of a conductor film so as to cross over the insulator.   9. The method of manufacturing a semiconductor device according to claim 8, wherein the wiring is formed so as to connect an electrode provided on an upper surface of the micro tile-like element and an electrode provided on the substrate.   The method of manufacturing a semiconductor device according to claim 8, wherein the insulator is formed by applying a liquid insulating material to the desired portion and then curing the insulating material.   The method of manufacturing a semiconductor device according to claim 10, wherein the insulator is formed using a droplet discharge method.   The method for manufacturing a semiconductor device according to claim 8, wherein the wiring is formed by a droplet discharge method.   13. The method of manufacturing a semiconductor device according to claim 8, wherein the micro tile-like element is bonded to the substrate by using an epitaxial lift-off method. The micro tile element is:
A semiconductor element is formed on a semiconductor substrate having a sacrificial layer as a lowermost layer that can be removed by etching,
Forming a separation groove, which is a groove having a depth reaching at least the sacrificial layer, on the surface of the semiconductor substrate;
Affixing a film on the surface of the semiconductor substrate,
Injecting an etchant into the space surrounded by the separation groove and the film, and etching the sacrificial layer to form the semiconductor element by separating it from the semiconductor substrate,
Affixing the micro tile element to the substrate is
The semiconductor element separated from the semiconductor substrate is handled in a state where the semiconductor element is attached to the film, and is adhered to a desired position of the substrate. The manufacturing method of the semiconductor device of description. A substrate,
A micro tile-like element having a tile part formed on the substrate and having a tapered side surface and a columnar part formed on the tile part;
An insulating layer formed on the top surface of the tile portion and having a forward tapered side surface;
A first electrode formed on an upper surface of the tile portion;
A second electrode formed on the top surface of the columnar portion and the top surface of the insulating layer;
A first insulator formed on a side surface of the tile portion and a part of an upper surface of the first electrode;
A second insulator formed on the side surface of the tile portion, on the side surface of the insulating layer, and on a part of the upper surface of the second electrode;
A first wiring formed on a part of the substrate, a top surface of the first insulator, and a part of a top surface of the first electrode;
A semiconductor device comprising: a second wiring formed on a part of the substrate, a top surface of the second insulator, and a part of a top surface of the second electrode.