JP4522926B2 - Manufacturing method of adsorption device - Google Patents

Manufacturing method of adsorption device Download PDF

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JP4522926B2
JP4522926B2 JP2005235683A JP2005235683A JP4522926B2 JP 4522926 B2 JP4522926 B2 JP 4522926B2 JP 2005235683 A JP2005235683 A JP 2005235683A JP 2005235683 A JP2005235683 A JP 2005235683A JP 4522926 B2 JP4522926 B2 JP 4522926B2
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adsorption
electrodes
groove
suction
protective film
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重信 平
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Ulvac Inc
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本発明は、吸着装置の製造方法にかかり、特に、絶縁性の基板を吸着できる吸着装置の製造方法に関する。 The present invention relates to a method for manufacturing an adsorption device , and more particularly to a method for manufacturing an adsorption device capable of adsorbing an insulating substrate.

従来より、真空装置内で基板を保持するために吸着装置が使用されている。導電性の基板(半導体基板など)を保持する場合は保持対象物との間にコンデンサを形成し、その静電容量で保持することができる。   Conventionally, a suction device is used to hold a substrate in a vacuum apparatus. In the case of holding a conductive substrate (semiconductor substrate or the like), a capacitor can be formed between the holding object and held by its capacitance.

しかし、液晶表示装置の基板ような絶縁性基板(ガラス基板など)の場合はコンデンサを形成できないため、絶縁性基板を電極が形成する不均一電界中に置き、グランジェント力(gradient力)によって保持している(特開2001−35907)。
グラディエント力を用いた吸着装置は既に大型基板の液晶表示装置の生産に用いられており、液晶滴下貼り合せ装置の中の重要な構成となっている(特開2002−229044の図8)。
However, in the case of an insulating substrate (such as a glass substrate) such as a substrate of a liquid crystal display device, a capacitor cannot be formed. Therefore, the insulating substrate is placed in a non-uniform electric field formed by electrodes and held by a gradient force. (Japanese Patent Laid-Open No. 2001-35907).
An adsorption device using a gradient force has already been used for the production of a liquid crystal display device with a large substrate, and is an important configuration in a liquid crystal dropping and bonding apparatus (FIG. 8 of JP-A-2002-229044).

実際の装置では、先ず、大気中で真空吸着によってガラス基板を吸着保持し、真空槽内に搬入した後、真空槽内を真空雰囲気にするまでに、ガラス基板の保持力を真空吸着力から静電気力又はグラディエント力に切換える必要がある。従って、一台の吸着装置で二種類の吸着力を発生させる必要がある。
最近は液晶表示装置等の表示装置が増々大型化し、大型ガラス基板の保持するための強い保持力が要求されている。
In an actual device, the glass substrate is first sucked and held in the atmosphere by vacuum suction, and after the glass substrate is carried into the vacuum chamber, the holding power of the glass substrate is changed from the vacuum suction force to the static electricity. It is necessary to switch to force or gradient force. Therefore, it is necessary to generate two types of adsorption forces with a single adsorption device.
Recently, a display device such as a liquid crystal display device has been increased in size, and a strong holding force for holding a large glass substrate is required.

図6の符号111は、従来技術の吸着装置を示している。符号111aは、内部構造を説明するための平面図、符号111b、111cは、それぞれF−F線、G−G線切断断面図である。
この吸着装置111は、絶縁性の基板121上に第一、第二の電極123a、123bが配置されている。
The code | symbol 111 of FIG. 6 has shown the adsorption apparatus of the prior art. Reference numeral 111a is a plan view for explaining the internal structure, and reference numerals 111b and 111c are sectional views taken along lines FF and GG, respectively.
In the adsorption device 111, first and second electrodes 123a and 123b are arranged on an insulating substrate 121.

第一、第二の電極123a、123bは、所定間隔で離間されており、吸着装置111には、第一、第二の電極123a、123bの表面と、その間に位置する絶縁性の基板121の表面とを覆う絶縁性の保護膜124が形成されている。
保護膜124には、有底の溝から成る吸着溝126が形成されておいる。
The first and second electrodes 123a and 123b are spaced apart from each other at a predetermined interval, and the adsorption device 111 includes a surface of the first and second electrodes 123a and 123b and an insulating substrate 121 positioned therebetween. An insulating protective film 124 that covers the surface is formed.
In the protective film 124, an adsorption groove 126 made of a bottomed groove is formed.

吸着溝126の一部底面には、基板121の裏面まで貫通する排気孔127が形成されている。   An exhaust hole 127 that penetrates to the back surface of the substrate 121 is formed in a part of the bottom surface of the suction groove 126.

排気孔127を真空排気系に接続し、吸着装置111の第一、第二の電極123a、123bが形成された面を鉛直下方に向けそれら表面の保護膜124をガラス基板等の吸着対象物に密着させる。そして、排気孔127から吸着溝126内の大気を真空排気すると、吸着対象物は吸着装置111の表面に真空吸着され、真空吸着力によって保持される。   The exhaust hole 127 is connected to an evacuation system, and the surface on which the first and second electrodes 123a and 123b of the adsorption device 111 are formed is directed vertically downward so that the protective film 124 on the surface is an adsorption target such as a glass substrate. Adhere closely. Then, when the atmosphere in the adsorption groove 126 is evacuated from the exhaust hole 127, the object to be adsorbed is vacuum adsorbed on the surface of the adsorption device 111 and is held by the vacuum adsorption force.

第一、第二の電極123a、123b間に電圧を印加すると、吸着対象物は第一、第二の電極123a、123b間に形成される電界の中に置かれ、グラディエント力によって吸着装置111に吸着される。   When a voltage is applied between the first and second electrodes 123a and 123b, the object to be adsorbed is placed in an electric field formed between the first and second electrodes 123a and 123b, and is applied to the adsorption device 111 by a gradient force. Adsorbed.

次に、真空槽内を真空排気すると真空吸着力は消滅し、吸着対象物はグラディエント力によって保持された状態になる。
グラディエント力を発生させる場合、吸着対象のガラス基板と電極の間の距離は短い程有利であるが、吸着溝126のパターンと第一、第二の電極123a、123bのパターンとは、相互に独立に設計されていたため、吸着溝126と第一、第二の電極123a、123bとが交差していた。
Next, when the inside of the vacuum chamber is evacuated, the vacuum adsorption force disappears and the object to be adsorbed is held by the gradient force.
When the gradient force is generated, it is advantageous that the distance between the glass substrate to be attracted and the electrode is short, but the pattern of the attracting groove 126 and the patterns of the first and second electrodes 123a and 123b are mutually independent. Therefore, the suction groove 126 and the first and second electrodes 123a and 123b intersected each other.

図7(a)は吸着溝126のパターン、同図(b)は第一、第二の電極123a、123bのパターンである。
吸着溝126の深さは深い方が真空吸着力は強くなるが、そのために保護膜124の膜厚を厚くするとグラディエント力が弱くなってしまう。
FIG. 7A shows the pattern of the suction grooves 126, and FIG. 7B shows the pattern of the first and second electrodes 123a and 123b.
As the suction groove 126 is deeper, the vacuum suction force becomes stronger. For this reason, if the protective film 124 is made thicker, the gradient force becomes weaker.

第一、第二の電極123a、123bには高電圧が印加されるため、絶縁性の保護膜124で覆っておく必要があるが、第一、第二の電極123a、123bが吸着溝126の底面に露出せず、第一、第二の電極123a、123b上の保護膜124の膜厚T12が確保されるためには、吸着溝126の深さD11は、第一、第二の電極123a、123b上の保護膜124の膜厚T11よりも十分浅くする必要がある。 Since a high voltage is applied to the first and second electrodes 123 a and 123 b, it is necessary to cover the first and second electrodes 123 a and 123 b with an insulating protective film 124. not exposed on the bottom, first, to the second electrode 123a, the thickness T 12 of the protective film 124 on 123b is ensured, the depth D 11 of the suction grooves 126, first, second electrodes 123a, it is necessary to sufficiently shallower than the thickness T 11 of the protective film 124 on 123b.

吸着溝126の深さは最低でも30μmが必要であるが、充分な真空吸着力を得るには、100〜150μmの深さが望ましいのに対し、グラディエント力を強くするため、保護膜124の膜厚を300μm以下にすると、吸着溝126の深さは50μm程度になり、真空吸着力が弱くなっていた。
特開2001−35907号公報 特開2002−229044号公報
The depth of the suction groove 126 is required to be at least 30 μm. To obtain a sufficient vacuum suction force, a depth of 100 to 150 μm is desirable. On the other hand, in order to increase the gradient force, the film of the protective film 124 When the thickness was 300 μm or less, the depth of the suction groove 126 was about 50 μm, and the vacuum suction force was weak.
JP 2001-35907 A Japanese Patent Laid-Open No. 2002-229044

本発明は、上記従来技術の課題を解決するために創作されたものであり、絶縁性の基板に対するグラディエント力と真空吸着力を大きくできる吸着装置を提供することにある。  The present invention was created to solve the above-described problems of the prior art, and it is an object of the present invention to provide an adsorption device that can increase the gradient force and the vacuum adsorption force on an insulating substrate.

上記課題を解決するため、本発明は、基板上に配置された導電性材料と、前記導電性材料で構成され、互いに異なる電圧が印加される第一、第二の電極と、前記第一、第二の電極表面を被覆する絶縁性の保護膜と、前記第一、第二の電極間に位置する吸着溝と、前記吸着溝に接続され、前記吸着溝を真空排気系に接続する排気孔とを有し、前記保護膜上に吸着対象物を配置し、前記排気孔から前記吸着溝内の気体を真空排気すると前記吸着対象物は真空吸着力によって前記保護膜上に吸着され、前記第一、第二の電極間に電圧を印加するとグラディエント力によって前記吸着対象物は前記保護膜上に吸着されるように構成された吸着装置を製造する製造方法であって、表面が絶縁性を有する基板の表面に前記導電性材料の膜を形成し、前記導電性材料の膜をパターニングして前記第一、第二の電極を形成した後、前記第一、第二の電極膜の表面に前記保護膜を50μm以上100μm以下の厚みに形成し、前記吸着溝の底部を前記第一、第二の電極の表面よりも深くし、前記吸着溝の深さを前記導電性材料の膜厚にする吸着装置の製造方法である。
また、本発明は、前記吸着溝を、前記第一又は第二の電極のうち、いずれか一方によって取り囲んで形成する吸着装置の製造方法である。
また、本発明は、前記導電性材料の前記膜のパターニングの際に、前記第一、第二の電極の外周よりも外側と前記吸着溝の一端とを接続する開口を形成し、前記排気孔を前記吸着溝の他端に配置する吸着装置の製造方法である。
前記導電性材料の膜をパターニングして前記第一、第二の電極を形成する際に、前記導電性材料の膜のパターニングによって、前記第一、第二の電極と離間した第三の電極を形成し、前記第三の電極によって、前記第一、第二の電極と前記吸着溝とを取り囲む吸着装置の製造方法である。
In order to solve the above-described problems, the present invention includes a conductive material disposed on a substrate, a first electrode formed of the conductive material, and a second electrode to which different voltages are applied, and the first, An insulating protective film covering the surface of the second electrode, an adsorption groove positioned between the first and second electrodes, and an exhaust hole connected to the adsorption groove and connecting the adsorption groove to a vacuum exhaust system When the object to be adsorbed is disposed on the protective film, and the gas in the adsorption groove is evacuated from the exhaust hole, the object to be adsorbed is adsorbed on the protective film by a vacuum adsorbing force, A manufacturing method for manufacturing an adsorption device configured such that when a voltage is applied between the first and second electrodes, the adsorption object is adsorbed on the protective film by a gradient force, and the surface has an insulating property. Forming a film of the conductive material on the surface of the substrate; The first by patterning the film of sexual material, after forming the second electrode, the first, the protective film is formed on the 100μm thickness of not less than 50μm on the surface of the second electrode layer, and the suction groove Is made deeper than the surfaces of the first and second electrodes, and the suction groove has a depth of the conductive material .
Moreover, this invention is a manufacturing method of the adsorption | suction apparatus which surrounds and forms the said adsorption | suction groove | channel by either one of said 1st or 2nd electrodes.
In the present invention, the patterning of the film of the conductive material may be performed by forming an opening that connects the outer side of the first and second electrodes to one end of the adsorption groove and the exhaust hole. Is a manufacturing method of the suction device in which the other end of the suction groove is disposed.
When the first and second electrodes are formed by patterning the conductive material film, the third electrode separated from the first and second electrodes is formed by patterning the conductive material film. It is a manufacturing method of an adsorption device formed and surrounding the first and second electrodes and the adsorption groove by the third electrode.

真空吸着力とグラディエント力の両方が強い吸着装置が得られる。   An adsorption device with strong vacuum adsorption force and gradient force is obtained.

図4の符号10は、本発明によって製造した吸着装置を用いた真空処理装置を示している。
この真空処理装置10は、真空槽41と、本発明の第一例の吸着装置11(又は後述する各例の吸着装置12、13)とを有している。
Reference numeral 10 in FIG. 4 indicates a vacuum processing apparatus using the suction apparatus manufactured according to the present invention.
The vacuum processing apparatus 10 includes a vacuum chamber 41 and a suction device 11 of the first example of the present invention (or suction devices 12 and 13 of each example described later).

真空槽41の外部には、高真空排気系42と低真空排気系43が設けられている。真空槽41は、バルブ45を介して高真空排気系42に接続されており、高真空排気系42を動作させてバルブ45を開状態にすると、真空槽41の内部を高真空雰囲気まで真空排気できるように構成されている。吸着装置11は切替装置44を介して高真空排気系42と低真空排気系43の両方に接続可能に構成されており、切替装置44内の三方弁を切換えることで、高真空排気系42と低真空排気系43のいずれかに接続されるようになっている。   A high vacuum exhaust system 42 and a low vacuum exhaust system 43 are provided outside the vacuum chamber 41. The vacuum chamber 41 is connected to a high vacuum exhaust system 42 via a valve 45, and when the high vacuum exhaust system 42 is operated to open the valve 45, the inside of the vacuum chamber 41 is vacuum exhausted to a high vacuum atmosphere. It is configured to be able to. The adsorption device 11 is configured to be connectable to both the high vacuum exhaust system 42 and the low vacuum exhaust system 43 via the switching device 44, and by switching the three-way valve in the switching device 44, It is connected to one of the low vacuum exhaust systems 43.

吸着装置11の構造を図1に示す。同図符号11aは内部構造を説明するための平面図、符号11b、11cは、それぞれそのA−A線、B−B線切断断面図である。
この吸着装置11は、少なくとも表面が絶縁されている基板20を有している。ここでは基板20は、金属基板21と、該金属基板21の表面に形成された絶縁膜22とで構成されている。
The structure of the adsorption device 11 is shown in FIG. Reference numeral 11a is a plan view for explaining the internal structure, and reference numerals 11b and 11c are sectional views taken along lines AA and BB, respectively.
The adsorption device 11 has a substrate 20 whose surface is insulated at least. Here, the substrate 20 includes a metal substrate 21 and an insulating film 22 formed on the surface of the metal substrate 21.

基板20の表面には、パターニングされた導電性材料膜から成る第一、第二、第三の電極23a、23b、23cが配置されている。第一〜第三の電極23a〜23cは、電気導電性を有する導電性材料の膜を形成した後、エッチング等でパターニングしたり、スクリーン印刷によって直接パターニングした導電性材料膜を形成し、第一〜第三の電極23a〜23cとすることもできる。   On the surface of the substrate 20, first, second and third electrodes 23a, 23b and 23c made of a patterned conductive material film are disposed. The first to third electrodes 23a to 23c are formed by forming a conductive material film having electrical conductivity and then patterning by etching or the like, or forming a conductive material film directly patterned by screen printing. To third electrodes 23a to 23c.

第一〜第三の電極23a〜23cは互いに所定間隔を開けて配置されており、その間には基板20表面(ここでは絶縁膜22)が位置している。
前記第一〜第三の電極23a〜23cの間隔は2mm以下であり、第一〜第三の電極23a〜23cの幅は4mm以下である。
The first to third electrodes 23a to 23c are arranged at a predetermined interval from each other, and the surface of the substrate 20 (here, the insulating film 22) is located therebetween.
The interval between the first to third electrodes 23a to 23c is 2 mm or less, and the width of the first to third electrodes 23a to 23c is 4 mm or less.

第一、第二の電極23a、23bは櫛の歯状であり、互いにかみ合うように配置されている。第三の電極23cはリング状であり、第一、第二の電極23a、23bを所定間隔を開けて囲んでいる。   The first and second electrodes 23a and 23b are comb-shaped, and are arranged so as to mesh with each other. The third electrode 23c has a ring shape and surrounds the first and second electrodes 23a and 23b with a predetermined interval.

第一〜第三の電極23a〜23cの表面と、その間に位置する基板20の表面には、絶縁性の保護膜24が形成されており、第一〜第三の電極23a〜23cの間には、底面と側面に保護膜24が露出する吸着溝26が形成されている。
吸着溝26の深さD1は、第一〜第三の電極23a〜23cを構成する導電性材料膜の厚みT3と同じ大きさであり、D1=T3である。
An insulating protective film 24 is formed on the surfaces of the first to third electrodes 23a to 23c and the surface of the substrate 20 positioned therebetween, and between the first to third electrodes 23a to 23c. Are formed with suction grooves 26 where the protective film 24 is exposed on the bottom and side surfaces.
The depth D 1 of the suction groove 26 is the same as the thickness T 3 of the conductive material film constituting the first to third electrodes 23a to 23c, and D 1 = T 3 .

保護膜24の厚さをT2とすると、導電性材料膜は導電性ペーストの塗布・焼成等の方法によって厚く形成されており、保護膜24は、CVDやPVDによって薄く形成されており、T2<T3にされている。その結果、吸着溝26の底面は、第一〜第三の電極23a〜23cの上端よりも低くなり、第一〜第三の電極23a〜23c上では、膜厚T2が小さい保護膜24を有し、且つ、深さD1が大きい吸着溝26を有する吸着装置11が得られている。 When the thickness of the protective film 24 is T 2 , the conductive material film is formed thick by a method such as application and baking of a conductive paste, and the protective film 24 is thinly formed by CVD or PVD. It has been in 2 <T 3. As a result, the bottom surface of the suction groove 26 is lower than the upper end of the first to third electrodes 23a to 23c, in the first to third electrodes 23a to 23c, the protective film 24 thickness T 2 is smaller a, and the adsorption device 11 having a suction groove 26 depth D 1 is larger is obtained.

吸着溝26の一部は、第一、第二の電極23a、23b間の最短距離よりも幅広に形成されており、幅広に形成された部分の底面には、基板20の裏面まで貫通する排気孔27が設けられている。
この排気孔27は、基板20の裏面部分で切替器44に接続されている。
A part of the adsorption groove 26 is formed wider than the shortest distance between the first and second electrodes 23 a and 23 b, and the exhaust gas penetrating to the back surface of the substrate 20 is formed on the bottom surface of the wide portion. A hole 27 is provided.
The exhaust hole 27 is connected to the switch 44 at the back surface portion of the substrate 20.

図4の符号15は、ガラス基板等の絶縁性の吸着対象物である。
先ず、吸着装置11は、保護膜24が下方に向くように配置し、吸着対象物15の上方位置で静止させ、吸着対象物15と吸着装置11とを近づけ、吸着装置11の保護膜24を吸着対象物15の表面に接触させる。
The code | symbol 15 of FIG. 4 is an insulating adsorption | suction target object, such as a glass substrate.
First, the adsorption device 11 is arranged so that the protective film 24 faces downward, and is stationary at a position above the adsorption object 15, the adsorption object 15 and the adsorption device 11 are brought close to each other, and the protective film 24 of the adsorption device 11 is moved. The surface of the adsorption object 15 is brought into contact.

第三の電極23c上の保護膜24の高さは、第一、第二の電極23a、23c上の保護膜24の高さと同じであり、第三の電極膜23c上の保護膜24が吸着対象物15と密着すると、吸着溝26は吸着対象物15によって蓋がされた状態になる。吸着溝26は、第三の電極23cを構成する導電性材料によって囲まれているから、吸着溝26の内部は吸着装置11の周囲の雰囲気から遮断されている。   The height of the protective film 24 on the third electrode 23c is the same as the height of the protective film 24 on the first and second electrodes 23a, 23c, and the protective film 24 on the third electrode film 23c is adsorbed. When closely attached to the object 15, the suction groove 26 is in a state of being covered with the suction object 15. Since the adsorption groove 26 is surrounded by the conductive material constituting the third electrode 23 c, the inside of the adsorption groove 26 is cut off from the atmosphere around the adsorption device 11.

ここでは第一〜第三の電極23a〜23c上の保護膜24の表面は同じ高さであり、第三の電極23c上の保護膜24が吸着対象物15と接触する場合は、第一、第二の電極23a、23b上の保護膜24の表面も吸着対象物15と接触する。
ハンドラー101によって真空吸着した状態で吸着対象物15を移動させ、真空槽41内に搬入する。
Here, the surface of the protective film 24 on the first to third electrodes 23a to 23c has the same height, and when the protective film 24 on the third electrode 23c is in contact with the adsorption object 15, The surface of the protective film 24 on the second electrodes 23 a and 23 b is also in contact with the adsorption object 15.
The suction object 15 is moved while being vacuum-sucked by the handler 101, and is carried into the vacuum chamber 41.

吸着対象物15を吸着装置11に接触させる際には、予め切替器44によって吸着装置11を低真空排気系43に接続し、吸着対象物15と吸着装置11とが密着した後、低真空排気系43によって吸着溝26内を真空排気すると、吸着溝26の内部の気体が真空排気され、吸着溝26の内部が数分の一気圧に減圧される。吸着対象物15及び吸着装置11の周囲雰囲気は大気圧であり、吸着溝26との差圧により、吸着対象物15は吸着装置11に真空吸着される。
その程度の差圧でも、真空吸着力は吸着対象物15を持ち上げるのに十分な大きさである。
When the adsorption object 15 is brought into contact with the adsorption device 11, the adsorption device 11 is connected to the low vacuum exhaust system 43 by the switch 44 in advance, and after the adsorption object 15 and the adsorption device 11 are in close contact with each other, the low vacuum exhaust is performed. When the inside of the adsorption groove 26 is evacuated by the system 43, the gas inside the adsorption groove 26 is evacuated, and the inside of the adsorption groove 26 is decompressed to a pressure of a few minutes. The ambient atmosphere around the adsorption object 15 and the adsorption device 11 is atmospheric pressure, and the adsorption object 15 is vacuum adsorbed by the adsorption device 11 due to the differential pressure with the adsorption groove 26.
Even with such a differential pressure, the vacuum suction force is large enough to lift the suction object 15.

基板20には裏面又は側面から配線が挿通されており、第一〜第三の電極23a〜23cは、その配線を介して電源装置48に接続されている。
真空槽41は接地電位に接続されており、電源装置48を動作させ、第一、第二の電極23a、23bに電圧を印加する。
Wiring is inserted into the substrate 20 from the back surface or the side surface, and the first to third electrodes 23a to 23c are connected to the power supply device 48 through the wiring.
The vacuum chamber 41 is connected to the ground potential, operates the power supply device 48, and applies a voltage to the first and second electrodes 23a and 23b.

第一、第二の電極23a、23bには、互いに逆極性の電圧を印加する。即ち、第一の電極23aに正電圧を印加する場合には第二の電極23bには負電圧を印加し、逆に第一の電極23aに負電圧を印加する場合には第二の電極23bには正電圧を印加する。
第三の電極23cは、第一の電極23a又は第二の電極23bのいずれか一方と短絡されており、第一又は第二の電極23a、23bと同じ電圧が印加される。
Voltages having opposite polarities are applied to the first and second electrodes 23a and 23b. That is, when a positive voltage is applied to the first electrode 23a, a negative voltage is applied to the second electrode 23b. Conversely, when a negative voltage is applied to the first electrode 23a, the second electrode 23b is applied. A positive voltage is applied to.
The third electrode 23c is short-circuited with either the first electrode 23a or the second electrode 23b, and the same voltage as that of the first or second electrode 23a, 23b is applied.

第一、第二の電極23a、23b間に電圧が印加されると、その間に形成される電界によってグラディエント力が発生する。絶縁性の吸着対象物15は、真空吸着力に加えてグラディエント力によっても吸着装置11に吸着される。   When a voltage is applied between the first and second electrodes 23a and 23b, a gradient force is generated by the electric field formed therebetween. The insulating adsorption object 15 is adsorbed by the adsorption device 11 by a gradient force in addition to a vacuum adsorption force.

形成されたグラディエント力は単独でも吸着対象物15を保持可能な大きさであり、吸着対象物15がグラディエント力によっても保持された後、真空槽41を高真空排気系42に接続し、高真空排気系42によって真空槽41内を真空排気する。   The formed gradient force is large enough to hold the adsorption object 15 alone, and after the adsorption object 15 is also held by the gradient force, the vacuum chamber 41 is connected to the high vacuum exhaust system 42 to obtain a high vacuum. The inside of the vacuum chamber 41 is evacuated by the exhaust system 42.

高真空排気系42により、真空槽41内の吸着装置11及び吸着対象物15の周囲の圧力が低下し、差圧が小さくなると真空吸着力は消滅するが、真空槽41内が吸着溝26内の圧力よりも低くなった場合は、吸着溝26内の残留気体により、吸着力ではなく、吸着対象物15を吸着装置11から離間させる反発力が発生してしまう。   The high vacuum exhaust system 42 reduces the pressure around the suction device 11 and the suction target 15 in the vacuum chamber 41 and the vacuum suction force disappears when the differential pressure decreases, but the vacuum chamber 41 is in the suction groove 26. When the pressure is lower than the pressure, the residual gas in the suction groove 26 generates not a suction force but a repulsive force that separates the suction target 15 from the suction device 11.

この真空処理装置では、真空槽41内を高真空排気系42によって真空排気する際、切替器44によって、吸着装置11の接続を低真空排気系43から高真空排気系42に切り換え、吸着溝26内を真空槽41内と共に高真空排気系42によって真空排気する。 In this vacuum processing apparatus , when the inside of the vacuum chamber 41 is evacuated by the high vacuum exhaust system 42, the switch 44 switches the connection of the adsorption device 11 from the low vacuum exhaust system 43 to the high vacuum exhaust system 42, and the adsorption groove 26. The inside is evacuated together with the inside of the vacuum chamber 41 by a high vacuum evacuation system 42.

高真空排気系42によれば、低真空排気系43によるよりも吸着溝26内を低圧力まで真空排気でき、真空槽41と吸着溝26内を同じ高真空排気系42によって一緒に真空排気するので、大きな反発力は発生せず、グラディエント力によって吸着対象物15は吸着装置11に保持された状態が維持される。   According to the high vacuum exhaust system 42, the inside of the suction groove 26 can be evacuated to a lower pressure than by the low vacuum exhaust system 43, and the vacuum tank 41 and the suction groove 26 are evacuated together by the same high vacuum exhaust system 42. Therefore, a large repulsive force is not generated, and the state in which the adsorption object 15 is held by the adsorption device 11 is maintained by the gradient force.

真空処理装置10がスパッタ装置や蒸着装置の場合、真空槽41内にターゲットや蒸着源が配置されており、吸着対象物15は吸着装置11に保持された状態で薄膜が形成される。   When the vacuum processing apparatus 10 is a sputtering apparatus or a vapor deposition apparatus, a target and a vapor deposition source are arranged in the vacuum chamber 41, and a thin film is formed while the adsorption target 15 is held by the adsorption apparatus 11.

真空処理装置10がパネル封止装置である場合、吸着装置11に保持された吸着対象物15は、真空槽41内に配置された他の基板と位置合わせされ、貼り合わされる。   When the vacuum processing apparatus 10 is a panel sealing apparatus, the suction object 15 held by the suction apparatus 11 is aligned with and bonded to another substrate disposed in the vacuum chamber 41.

以上説明したように、本発明によって製造した吸着装置11では、第一〜第三の電極23a〜23cを構成する導電材料を厚くしても、電極上の保護膜24が薄くならないので、容易に吸着溝26を50μm以上に深くすることができる。 As described above, in the adsorption device 11 manufactured according to the present invention , even if the conductive material constituting the first to third electrodes 23a to 23c is thickened, the protective film 24 on the electrodes is not thinned. The suction groove 26 can be deepened to 50 μm or more.

第一、第二の電極23a、23b間の電界強度は絶縁破壊が起こらない範囲で大きい方がよく、3×106V/m以上の強度の電場を形成することが望ましい。
保護膜24については、厚い方が寿命が長くなるがグラディエント力は弱くなってしまうため、100μm以下の厚みが好ましい。
The electric field strength between the first and second electrodes 23a and 23b should be as large as possible without causing dielectric breakdown, and it is desirable to form an electric field having an intensity of 3 × 10 6 V / m or more.
About the protective film 24, the thicker one has a longer life but the gradient force becomes weaker. Therefore, a thickness of 100 μm or less is preferable.

次に、本発明によって製造した他の例について説明する。
下記第二例及び第三例の吸着装置12、13については、第一例の吸着装置11と同じ部材には同じ符号を付して説明を省略する。
Next, another example manufactured according to the present invention will be described.
About the adsorption device 12 and 13 of the following 2nd example and the 3rd example, the same code | symbol is attached | subjected to the same member as the adsorption device 11 of a 1st example, and description is abbreviate | omitted.

第一例の吸着装置11では、吸着溝26を第一、第二の電極23a、23bとは離間した第三の電極23cで囲ったが、図2の第二例の吸着装置12のように、第三の電極を設けず、吸着溝26を第一又は第二の電極(この吸着装置12では第二の電極23b)で囲んでもよい。   In the suction device 11 of the first example, the suction groove 26 is surrounded by the third electrode 23c that is separated from the first and second electrodes 23a and 23b, but like the suction device 12 of the second example of FIG. The suction groove 26 may be surrounded by the first or second electrode (the second electrode 23b in the suction device 12) without providing the third electrode.

図2の符号12aは、第二例の吸着装置12の内部構造を説明するための平面図、同図符号12b、12cは、C−C線、D−D線切断断面図である。   2 is a plan view for explaining the internal structure of the suction device 12 of the second example, and the reference numerals 12b and 12c are sectional views taken along the line CC and the line DD.

また、図3に示した第三例の吸着装置13のように、吸着溝26が完全に導電性材料で囲まれておらず、一部に開口28が形成されていてもよい。この場合、開口から遠い位置に排気孔27を設け、排気孔27と開口28の間のコンダクタンスが小さくなるようにし、吸着溝26内が数分の一気圧の圧力まで真空排気されるようにすればよい。   Further, like the suction device 13 of the third example shown in FIG. 3, the suction groove 26 may not be completely surrounded by the conductive material, and the opening 28 may be formed in part. In this case, an exhaust hole 27 is provided at a position far from the opening so that the conductance between the exhaust hole 27 and the opening 28 is reduced, and the suction groove 26 is evacuated to a pressure of a fraction of an atmospheric pressure. That's fine.

図3の符号13aは第三例の吸着装置13の内部構造を説明するための平面図、同図符号13bは、そのE−E線切断断面図である。
上記は基板20を、金属板21と絶縁膜22の積層体で構成させたが、絶縁性の板を基板にしてもよい。
Reference numeral 13a in FIG. 3 is a plan view for explaining the internal structure of the suction device 13 of the third example, and reference numeral 13b in FIG. 3 is a sectional view taken along line E-E.
In the above description, the substrate 20 is composed of a laminate of the metal plate 21 and the insulating film 22, but an insulating plate may be used as the substrate.

膜厚の厚い保護膜24を形成した後、第一〜第三の電極23a〜23c上の部分を残して保護膜をエッチングすると、一層深い吸着溝26を形成することもできる。
なお、上記第一例〜第三例の吸着装置11〜13の平面図では、第一〜第三の電極23a〜23cのパターンは簡略化してある。
After forming the thick protective film 24, the protective film is etched leaving the portions on the first to third electrodes 23a to 23c, so that a deeper adsorption groove 26 can be formed.
In the plan views of the adsorption devices 11 to 13 of the first to third examples, the patterns of the first to third electrodes 23a to 23c are simplified.

本発明の製造方法によって得られる第一例の吸着装置First example adsorption device obtained by the production method of the present invention 本発明の製造方法によって得られる第二例の吸着装置Second example adsorption device obtained by the production method of the present invention 本発明の製造方法によって得られる第三例の吸着装置Third example adsorption device obtained by the production method of the present invention 本発明の製造方法によって得られる吸着装置を用いた真空処理装置を説明するための図(1)FIG. (1) for demonstrating the vacuum processing apparatus using the adsorption apparatus obtained by the manufacturing method of this invention 本発明の製造方法によって得られる吸着装置を用いた真空処理装置を説明するための図(2)FIG. (2) for explaining the vacuum processing apparatus using the adsorption apparatus obtained by the production method of the present invention 従来技術の吸着装置Prior art adsorption device (a):その吸着溝のパターン (b):その電極パターン(a): The pattern of the adsorption groove (b): The electrode pattern

符号の説明Explanation of symbols

10……真空処理装置
11〜13……吸着装置
20……基板
23a……第一の電極
23b……第二の電極
24……保護膜
26……吸着溝
27……排気孔
DESCRIPTION OF SYMBOLS 10 ... Vacuum processing apparatus 11-13 ... Adsorption | suction apparatus 20 ... Board | substrate 23a ... 1st electrode 23b ... 2nd electrode 24 ... Protective film 26 ... Adsorption groove | channel 27 ... Exhaust hole

Claims (4)

基板上に配置された導電性材料と、
前記導電性材料で構成され、互いに異なる電圧が印加される第一、第二の電極と、
前記第一、第二の電極表面を被覆する絶縁性の保護膜と、
前記第一、第二の電極間に位置する吸着溝と、
前記吸着溝に接続され、前記吸着溝を真空排気系に接続する排気孔とを有し、
前記保護膜上に吸着対象物を配置し、前記排気孔から前記吸着溝内の気体を真空排気すると前記吸着対象物は真空吸着力によって前記保護膜上に吸着され、
前記第一、第二の電極間に電圧を印加するとグラディエント力によって前記吸着対象物は前記保護膜上に吸着されるように構成された吸着装置を製造する製造方法であって、
表面が絶縁性を有する基板の表面に前記導電性材料の膜を形成し、
前記導電性材料の膜をパターニングして前記第一、第二の電極を形成した後、前記第一、第二の電極膜の表面に前記保護膜を50μm以上100μm以下の厚みに形成し、
前記吸着溝の底部を前記第一、第二の電極の表面よりも深くし、前記吸着溝の深さを前記導電性材料の膜厚にする吸着装置の製造方法。
A conductive material disposed on a substrate;
First and second electrodes made of the conductive material to which different voltages are applied;
An insulating protective film covering the surfaces of the first and second electrodes;
A suction groove located between the first and second electrodes;
An exhaust hole connected to the suction groove and connecting the suction groove to a vacuum exhaust system;
When an object to be adsorbed is disposed on the protective film, and the gas in the adsorption groove is evacuated from the exhaust hole, the object to be adsorbed is adsorbed on the protective film by a vacuum adsorption force,
A manufacturing method for manufacturing an adsorption device configured to adsorb the object to be adsorbed on the protective film by a gradient force when a voltage is applied between the first and second electrodes,
Forming a film of the conductive material on the surface of the substrate having an insulating surface;
After patterning the conductive material film to form the first and second electrodes, the protective film is formed on the surfaces of the first and second electrode films to a thickness of 50 μm to 100 μm ,
The manufacturing method of the adsorption | suction apparatus which makes the bottom part of the said adsorption groove deeper than the surface of said 1st, 2nd electrode, and makes the depth of the said adsorption groove the film thickness of the said electroconductive material .
前記吸着溝を、前記第一又は第二の電極のうち、いずれか一方によって取り囲んで形成する請求項1記載の吸着装置の製造方法。The method of manufacturing an adsorption device according to claim 1, wherein the adsorption groove is formed so as to be surrounded by one of the first and second electrodes. 前記導電性材料の前記膜のパターニングの際に、前記第一、第二の電極の外周よりも外側と前記吸着溝の一端とを接続する開口を形成し、前記排気孔を前記吸着溝の他端に配置する請求項1記載の吸着装置の製造方法。When patterning the film of the conductive material, an opening is formed to connect the outside of the outer periphery of the first and second electrodes and one end of the adsorption groove, and the exhaust hole is connected to the other of the adsorption groove. The manufacturing method of the adsorption | suction apparatus of Claim 1 arrange | positioned at an end. 前記導電性材料の膜をパターニングして前記第一、第二の電極を形成する際に、前記導電性材料の膜のパターニングによって、前記第一、第二の電極と離間した第三の電極を形成し、前記第三の電極によって、前記第一、第二の電極と前記吸着溝とを取り囲む請求項1記載の吸着装置の製造方法。When the first and second electrodes are formed by patterning the conductive material film, the third electrode separated from the first and second electrodes is formed by patterning the conductive material film. The method of manufacturing an adsorption device according to claim 1, wherein the adsorption device is formed and surrounds the first and second electrodes and the adsorption groove by the third electrode.
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JP2005223185A (en) * 2004-02-06 2005-08-18 Toto Ltd Electrostatic chuck and its manufacturing method

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04147642A (en) * 1990-10-09 1992-05-21 Nippon Telegr & Teleph Corp <Ntt> Vacuum/electrostatic chuck
JP2000077509A (en) * 1998-08-31 2000-03-14 Sony Corp Wafer stage and method for treating wafer
JP2001035907A (en) * 1999-07-26 2001-02-09 Ulvac Japan Ltd Chuck device
JP2003282690A (en) * 2002-03-25 2003-10-03 Toto Ltd Electrostatic chuck
JP2004253402A (en) * 2002-10-17 2004-09-09 Anelva Corp Electrostatic chuck
JP2005223185A (en) * 2004-02-06 2005-08-18 Toto Ltd Electrostatic chuck and its manufacturing method

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