JP2007053162A - Frame for dicing semiconductor wafer - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a frame for dicing a semiconductor wafer which can prevent an adhesive agent from being adhered to a die or remaining on the frame, and also to prevent a dicing layer from being displaced or removed from the frame even if a large pressure is given. <P>SOLUTION: The frame for dicing a semiconductor wafer is provided with a hollow frame 1 to house and enclose a thin and 12-inch semiconductor wafer in diameter at any clearance, and a flexible dicing layer 20 which is adhered to the rear surface 4 of the hollow frame 1 and holds the housed and enclosed semiconductor wafer by sticking in attachable and detachable manner. The periphery of a hollow part of the rear surface 4 of the frame 1 is used as an area 5 to be adhered for the dicing layer 20, the area 5 is randomly made uneven by roughening to form a plurality of projections 6 into a sharp and nearly spike-like shape, and then each of the projections 6 is pierced into the surface periphery of the dicing layer 20. Even if the frame for dicing is strongly press-fitted to an expanding apparatus, the dicing layer 20 can be prevented from being displaced or removed from the frame 1 as much as possible due to spiking action of the projections 6. <P>COPYRIGHT: (C)2007,JPO&INPIT

Description

  The present invention relates to a semiconductor wafer dicing frame used for semiconductor wafer dicing and expanding operations.

  As shown in FIGS. 7 to 9, a conventional dicing frame for a semiconductor wafer includes a frame 1A for accommodating a semiconductor wafer W having a diameter of 300 mm (12 inches), and the dicing for holding the semiconductor wafer W on the frame 1A. It is comprised by sticking the film 21 (refer patent document 1).

  The frame 1A is formed hollow using, for example, SUS or the like, and a bar code 8 for managing information on the semiconductor wafer W and its processing process is pasted on a part of the surface. Aligned and stored in a storage container for semiconductor wafers. The dicing film 21 includes, for example, a soft vinyl chloride resin formed into a film having a thickness of 50 to 200 μm, and an acrylic adhesive is applied to the surface of the flexible soft vinyl chloride resin to a thickness of 10 to 50 μm. It is detachably attached to the back surface of the frame 1A and closes the hollow portion.

  In the semiconductor wafer dicing frame having such a configuration, the semiconductor wafer W adhered and held on the dicing film 21 is diced into a plurality of dies (chips) D by the diamond blade 30 (see FIG. The dicing film 21 is pressed from above and stretched in the radial direction (see FIGS. 8 and 9), and the distance between the dice D is increased so that the dies D do not contact each other.

Then, the dies D are individually picked up from the semiconductor wafer W and transferred, and after operations such as assembly of the package and mounting of the substrate are performed, the damaged / deformed dicing film 21 is peeled off from the frame 1. Used for recycling.
JP 2000-319662 A

  Conventional dicing frames for semiconductor wafers use a soft vinyl chloride resin as the dicing film 21 as described above. Therefore, when an acrylic adhesive adheres to the die D or peels off the dicing film 21. There is a problem in that the pressure-sensitive adhesive remains in the frame 1A and the productivity is lowered. As a means for solving this problem, there is a method of using a polyolefin film made of ethylene vinyl acetate (EVA) or the like for the dicing film 21.

  However, although the polyolefin-based film can prevent the adhesive from adhering to the die D or remaining on the frame 1A, it has a smaller elongation rate than that of the soft vinyl chloride resin. From the viewpoint of preventing the two from coming into contact with each other, it is necessary to strongly press the expander 31 with a large force from above. As a result, as shown in FIG. 10, a big problem that the dicing film 21 is displaced from the frame 1 </ b> A or detached is newly generated.

  The present invention has been made in view of the above, and prevents the adhesive from adhering to the die or remaining on the frame, and even if a large pressure is applied, the dicing layer is displaced or detached from the frame. It is an object of the present invention to provide a semiconductor wafer dicing frame that can be prevented.

In the present invention, in order to solve the above-mentioned problem, a hollow frame that accommodates a semiconductor wafer, and a flexible dicing layer that is adhered to the adherend surface of this frame and that holds the accommodated semiconductor wafer in an adhesive manner are provided. With
The frame is formed of a molding material containing a resin, and the surface to be adhered of the frame is roughened into irregularities, and the convex portions are formed in a substantially spike shape.

In addition, it is preferable to make surface roughness of a to-be-adhered surface into the range of Ra (JIS B0601-2001) 0.1-0.8 micrometer.
Moreover, it is preferable to make the surface roughness of the radial direction in a to-be-adhered surface into the range of Ra (JIS B0601-2001) 0.3-0.4 micrometer.
Furthermore, the projection of the frame is a projection having a length obtained by adding a portion obtained by cutting the roughness curve at the time of surface roughness measurement with an average line in a range of 1/100 to 1/2 of the measurement length. Is preferred.

  Here, the semiconductor wafer in the claims is mainly a 300 mm diameter type, but is not particularly limited, and may be a 200 mm diameter type or a 450 mm diameter type. The semiconductor wafer includes Si wafer, GaP wafer, and hyper Hi wafer, but any of them may be used. The molding material for the frame may be a material in which carbon fiber and calcium carbonate are kneaded with polyphenylene sulfide, or a material in which carbon fiber or glass fiber is kneaded with nylon resin.

  The flexible dicing layer is made of a transparent, opaque, or translucent film or sheet that adheres and holds the semiconductor wafer, and a polyolefin film is preferably used. Further, the substantially spike shape of the plurality of convex portions includes a spine-like or needle-like projection or a projection similar to this. The plurality of convex portions may or may not have the same size and length.

  According to the present invention, it is possible to prevent the adhesive from adhering to the die or remaining on the frame, and to effectively prevent the dicing layer from shifting or coming off from the frame even if a large pressure is applied. There is an effect that can be.

Moreover, if the surface roughness of the to-be-adhered surface is made into the range of Ra0.1-0.8 micrometer, a spike effect can be exhibited in a convex part and a dicing layer can be made to follow a convex part.
Furthermore, if the convex part of a flame | frame is the protrusion in which the length which added the part which cut | disconnected the roughness curve at the time of surface roughness measurement with an average line is the range of 1 / 100-1 / 2 with respect to measurement length In addition, it is possible to suppress a decrease in the number of portions where the convex portions sharpened on the dicing layer are reduced, and to allow the dicing layer to follow the convex portions.

  Hereinafter, a preferred embodiment of the present invention will be described with reference to the drawings. A dicing frame of a semiconductor wafer in this embodiment is a 12-inch thin semiconductor wafer patterned as shown in FIGS. A hollow frame 1 that encloses and surrounds W with a gap and a semiconductor frame W that is adhered to and enclosed on the back surface 4 that is a surface to which the frame 1 is adhered is detachably adhered and held. A dicing layer 20 is provided, and the frame 1 is injection-molded by an injection mold.

  As shown in FIGS. 1 and 2, the frame 1 is injection-molded into a substantially ring shape having a thickness of 2 to 3 mm larger than the 12-inch semiconductor wafer W by a predetermined molding material, and the inner peripheral surface 2 is formed in an inclined manner. The cross section is formed in a substantially square shape, and the front, rear, left and right sides of the outer peripheral surface are cut out linearly, and a pair of positioning notches 3 are cut out side by side at the front of the outer peripheral surface.

  As the predetermined molding material, for example, carbon that ensures strength and rigidity to at least one resin selected from polyphenylene sulfide (PPS) and nylon resin, which are excellent in fluidity, dimensional stability, low wear, and precision molding. Examples thereof include materials in which fibers, calcium carbonate, and aluminum borate whiskers having excellent reinforcing effect and chemical resistance are mixed and kneaded.

The periphery of the hollow portion of the back surface 4 of the frame 1 is used as a bonding region 5 for the dicing layer 20, and this ring-shaped bonding region 5 is roughened into random unevenness, and the plurality of protrusions 6 are substantially spiked. Each convex part 6 functions to bite into the surface peripheral part of the dicing layer 20 (see FIGS. 2 to 5). The surface roughness in the radial direction of the adherend region 5 is Ra (JIS B0601-2001) 0.1 to 0.8 μm, preferably 0.3 to 0.4 μm. The convex portion 6 has a length (l ₁ +... L ₄ ) obtained by adding a portion (l ₁ ,... L ₄ ) obtained by cutting the roughness curve at the time of measuring the surface roughness along the average line ML. In contrast, the protrusion is a sharp protrusion within a range of 1/100 to 1/2 (see FIG. 3).

The surface roughness is in the range of Ra 0.1 to 0.8 μm. When the surface roughness is less than 0.1 μm, the spike effect of the convex portion 6 is poor, and conversely, when it exceeds 0.8 μm, the dicing layer 20 follows. Because it disappears. Further, the added length (l ₁ +... L ₄ ) is in the range of 1/100 to 1/2 with respect to the measurement length (L). This is because the dicing layer 20 does not follow when the tip bites into and pierces, and conversely exceeds 1/2.

  As shown in FIG. 6, a housing hole 7 extending in the lateral direction is integrally formed in the rear portion of the front surface of the frame 1, and the RF tag 11 of the RFID system 10 is mounted in the housing hole 7. As shown in FIG. 1, the RFID system 10 includes an RF tag 11 that moves with the frame 1 when an internal memory is accessed by radio waves, an antenna unit 12 that transmits and receives radio waves and power between the RF tag 11, and an RF A reader / writer 13 that controls communication with the tag 11 and a computer 14 that controls the reader / writer 13 are provided.

  The antenna unit 12 and the reader / writer 13 are configured separately, but are integrated as necessary. In addition, various controllers are used in place of the computer 14 as long as the reader / writer 13 is not particularly affected by the control.

  Such a frame 1 has a flexural modulus of 25 to 50 GPa, preferably 25 to 40 GPa in the industry standard ASTM D790, and a flexural strength of 150 to 600 MPa, preferably 150 to 160 MPa in ASTM D790. It is said. This is because when the bending elastic modulus and bending strength of the frame 1 are out of the above ranges, the strength of the frame 1 is reduced or the frame 1 is easily damaged.

  The dicing layer 20 includes, for example, a polyolefin film made of ethylene vinyl acetate (EVA) or the like that restricts the adhesive from adhering to the die D, and an adhesive that adheres to the semiconductor wafer W by being applied to the surface of the polyolefin film. Are attached to the adherence region 5 of the frame 1 to close the hollow portion, and are peeled off from the frame 1 after use, and the frame 1 is subjected to recycling. The adhesive is preferably a UV-based adhesive that loses its adhesiveness when irradiated with UV light, but does not specifically exclude an acrylic re-peeling type or the like. The other parts are the same as those in the conventional example, and thus the description thereof is omitted.

  According to the above, even if the dicing layer 20 made of a polyolefin film with a low elongation rate provided with a UV-based adhesive is used, the plurality of convex portions 6 are pierced into the peripheral portion of the dicing layer 20 and a sufficient spike effect is achieved. And exerts adhesive effect. Therefore, even if the dicing frame is strongly pressed from above with a large force on the expanding device 31, the possibility that the dicing layer 20 is displaced or detached from the frame 1 due to the spike action of the convex portion 6 is extremely effectively eliminated. (See FIG. 4).

  Further, when the expanding operation is finished and the pressure contact with the dicing frame is released, the contact area of the convex portion 6 with respect to the peripheral portion of the dicing layer 20 is reduced to reduce the spike effect and the adhesive effect, so that the adhesive remains. The dicing layer 20 can be peeled off from the frame 1 (see FIG. 5). Moreover, since the EVA-based dicing layer 20 is used, unlike soft vinyl chloride resin, it is possible to suppress the adhesive from adhering to the frame 1 and the die D, and to significantly improve productivity and quality. Then, it is possible to suppress and prevent problems such as subsequent mounting work very effectively.

  In addition, since the frame 1 is injection-molded using a molding material such as polyphenylene sulfide instead of metal, it is very easy to form the protruding projections 6 and the weight can be reduced. And the convenience can be remarkably improved. If the flexural modulus is in the range of 25 to 50 GPa and the flexural strength is in the range of 150 to 600 MPa along with the material change of the frame 1, the strength of the frame 1 is reduced even if a resin is used. In addition, the frame 1 can be made as thin as 3 mm or less, and existing equipment and devices can be used as they are.

  In addition, since the frame 1 is made of resin instead of metal, even if the RF tag 11 of the RFID system 10 is used, the frame 1 does not adversely affect the communication characteristics of the RF tag 11 and malfunctions in wireless communication. It is possible to eliminate the possibility of causing trouble such as the above effectively. In addition, since the RF tag 11 of the RFID system 10 is integrally attached to the frame 1, the information system can be simplified, and since an inquiry of information is unnecessary, the response becomes very fast and the information Can be distributed, so that it is possible to flexibly cope with system expansion and changes.

  Furthermore, unlike barcodes (maximum information amount of 10 digits) 7 which are easily printed, it is possible to expect remote reading of information and power transmission, increase of information amount (maximum information amount of 1000 digits), and rewriting of information. Easier and improved anti-contamination can be expected. Furthermore, when the frame 1 is made of metal, the housing hole 7 for the RF tag 11 must be cut later over the frame 1, but when the frame 1 is made of resin, Since the storage hole 7 can be easily integrally formed when the frame 1 is molded, a significant improvement in productivity can be greatly expected.

  In the above-described embodiment, the storage hole 7 is recessed and formed in the rear portion of the surface of the frame 1. However, the present invention is not limited to this. For example, the storage hole 7 may be formed in at least a part of the side portion of the frame 1. Further, the RF tag 11 may be directly attached without recessing the storage hole 7 on either the front or back surface of the frame 1. The RFID system 10 includes an electromagnetic coupling method with a short communication distance, an electromagnetic induction method, a radio wave method with a long communication distance, and the like. Further, the RF tag 11 includes a label shape, a cylindrical shape, a card shape, a box shape, and the like, and any of them may be used.

Embodiments of a semiconductor wafer dicing frame according to the present invention will be described below together with comparative examples.
Example 1
First, a 12-inch semiconductor wafer frame shown in FIGS. 2 and 6 was injection-molded by an injection molding machine using polyphenylene sulfide (PPS) mixed with 50% by weight of glass fiber (GF). This frame has a size of an outer diameter of 400 mm, an inner diameter of 350 mm, and a thickness of 2.5 mm, and has a center line average roughness Ra (JIS B0601-2001) in the radial direction in the adhered region at the periphery of the hollow portion on the back surface of 0. 40 μm.

  Next, a dicing layer was adhered to the adherend region on the back surface of the injection-molded frame. As the dicing layer, a dicing film [trade name: Adwill D] manufactured by Lintec Corporation was used. Once the dicing layer is attached to the frame in this way, the entire dicing frame is irradiated with UV light by a die bonder manufactured by NEC Machinery Co., Ltd. to expand 8 mm. The presence or absence of the adhesive when the dicing layer was peeled off from the frame was observed and summarized in Table 1.

  In Table 1, with respect to peeling of the dicing layer, no problem was indicated as “◯”, and even a part of the dicing layer was indicated as “X”. The 90 ° peeling force (mN / 10 mm) conformed to JIS Z0237 [90-degree peeling adhesive strength]. Regarding the presence or absence of the adhesive after one week, the case where no pressure-sensitive adhesive remained was “◯”, and the case where a part of the pressure-sensitive adhesive remained was “×”.

Example 2
Except for the UV light irradiation by the die bonder, otherwise the same as in Example 1, the peeling of the dicing layer during the expansion work, 90 ° peeling force, and the presence or absence of the adhesive when the dicing layer was peeled from the frame after 1 week were observed. And are summarized in Table 1.

Comparative Example 1
The center line average roughness Ra in the radial direction in the adhered region at the periphery of the hollow part on the back surface of the frame is 0.09 μm, and the others are the same as in Example 1; The presence or absence of the adhesive when the dicing layer was peeled from the frame after 1 week was observed and summarized in Table 1.

Comparative Example 2
The center line average roughness Ra in the radial direction in the adhered region at the periphery of the hollow portion on the back surface of the frame was 0.09 μm, and the others were the same as in Example 2; The presence or absence of the adhesive when the dicing layer was peeled off from the frame after 1 week was observed and listed in Table 1.

Comparative Example 3
First, the frame shown in FIGS. 2 and 6 was cut out using stainless steel SUS304 having a thickness of 1.5 mm. The frame has an outer diameter of 400 mm, an inner diameter of 350 mm, and a thickness of 1.5 mm. The center line average roughness Ra is 0.06 μm, and the others are the same as in Example 1, and the dicing layer is peeled off during the expansion work. The peel strength and the presence or absence of an adhesive when the dicing layer was peeled from the frame after 1 week were observed and listed in Table 1.

Comparative Example 4
First, the frame shown in FIGS. 2 and 6 was cut out using stainless steel SUS304 having a thickness of 1.5 mm. The frame has an outer diameter of 400 mm, an inner diameter of 350 mm, and a thickness of 1.5 mm. The center line average roughness Ra is 0.06 μm, and the others are the same as in Example 2, and the dicing layer is peeled off during the expansion operation. The peel strength and the presence or absence of an adhesive when the dicing layer was peeled from the frame after 1 week were observed and listed in Table 1.

It is a whole perspective explanatory view showing an embodiment of a semiconductor wafer dicing frame concerning the present invention. It is back surface explanatory drawing which shows embodiment of the frame for dicing of the semiconductor wafer which concerns on this invention. It is explanatory drawing which shows the convex part of the flame | frame in embodiment of the flame | frame for dicing of the semiconductor wafer which concerns on this invention. It is explanatory drawing which shows the state of the convex part at the time of the expansion work in the embodiment of the dicing frame of the semiconductor wafer concerning this invention, and a dicing layer. It is explanatory drawing which shows the state of the convex part and dicing layer after the expansion work in embodiment of the dicing frame of the semiconductor wafer which concerns on this invention. It is a plane explanatory view showing an embodiment of a frame for dicing of a semiconductor wafer concerning the present invention. It is perspective explanatory drawing which shows the state at the time of the dicing operation | work of the dicing frame of the conventional semiconductor wafer. It is explanatory drawing which shows the state which sets the frame for dicing of the conventional semiconductor wafer to an expanding apparatus. It is explanatory drawing which shows the state which set the flame | frame for dicing of the semiconductor wafer in the past in the expansion apparatus, and was press-contacted. It is sectional explanatory drawing which shows the problem at the time of setting the flame | frame for semiconductor wafer dicing to an expanding apparatus.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 Frame 1A Frame 2 Inner peripheral surface 3 Notch 4 Back surface 5 Adhering area | region 6 Protruding part 7 Storage hole 10 RFID system 11 RF tag 20 Dicing layer 21 Dicing film 31 Expanding apparatus D Die L Measurement length ML Average line W Semiconductor wafer

Claims (3)

A dicing frame for a semiconductor wafer, comprising: a hollow frame for housing a semiconductor wafer; and a flexible dicing layer that is attached to a surface to which the semiconductor wafer is attached and holds the accommodated semiconductor wafer. ,
A frame for dicing a semiconductor wafer, characterized in that a frame is formed of a molding material containing a resin, a surface to be adhered of the frame is roughened, and the convex portion is formed into a substantially spike shape.   2. The frame for dicing a semiconductor wafer according to claim 1, wherein the surface roughness of the adherend surface is in the range of Ra 0.1 to 0.8 [mu] m. The projection of the frame is a projection having a length obtained by adding a portion obtained by cutting a roughness curve at the time of surface roughness measurement with an average line in a range of 1/100 to 1/2 of the measurement length. Or the frame for dicing of the semiconductor wafer of 2.

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