JP2007043121A - 半導体装置の作製方法 - Google Patents

半導体装置の作製方法 Download PDF

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Publication number
JP2007043121A
JP2007043121A JP2006179433A JP2006179433A JP2007043121A JP 2007043121 A JP2007043121 A JP 2007043121A JP 2006179433 A JP2006179433 A JP 2006179433A JP 2006179433 A JP2006179433 A JP 2006179433A JP 2007043121 A JP2007043121 A JP 2007043121A
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Japan
Prior art keywords
substrate
film
treatment
insulating film
semiconductor device
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Withdrawn
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JP2006179433A
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English (en)
Japanese (ja)
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JP2007043121A5 (enrdf_load_stackoverflow
Inventor
Koji Oriki
浩二 大力
Naoto Kusumoto
直人 楠本
Takuya Tsurume
卓也 鶴目
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Priority to JP2006179433A priority Critical patent/JP2007043121A/ja
Publication of JP2007043121A publication Critical patent/JP2007043121A/ja
Publication of JP2007043121A5 publication Critical patent/JP2007043121A5/ja
Withdrawn legal-status Critical Current

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JP2006179433A 2005-06-30 2006-06-29 半導体装置の作製方法 Withdrawn JP2007043121A (ja)

Priority Applications (1)

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JP2006179433A JP2007043121A (ja) 2005-06-30 2006-06-29 半導体装置の作製方法

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2005192420 2005-06-30
JP2006179433A JP2007043121A (ja) 2005-06-30 2006-06-29 半導体装置の作製方法

Publications (2)

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JP2007043121A true JP2007043121A (ja) 2007-02-15
JP2007043121A5 JP2007043121A5 (enrdf_load_stackoverflow) 2009-08-13

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JP2006179433A Withdrawn JP2007043121A (ja) 2005-06-30 2006-06-29 半導体装置の作製方法

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Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008235336A (ja) * 2007-03-16 2008-10-02 Semiconductor Energy Lab Co Ltd 半導体装置の作製方法
JP2008251640A (ja) * 2007-03-29 2008-10-16 Tdk Corp 導体パターンの形成方法
JP2010109356A (ja) * 2008-10-02 2010-05-13 Semiconductor Energy Lab Co Ltd Ｓｏｉ基板の作製方法
JP2014112678A (ja) * 2008-06-06 2014-06-19 Semiconductor Energy Lab Co Ltd 構造体の作製方法
US9995970B2 (en) 2010-08-17 2018-06-12 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of a liquid crystal device comprising an alignment film formed under reduced pressure
JP2021073740A (ja) * 2008-11-07 2021-05-13 株式会社半導体エネルギー研究所 半導体装置
CN113292042A (zh) * 2021-04-22 2021-08-24 江苏度微光学科技有限公司 一种超宽光谱吸收体、制备方法及其在光谱仪中的应用

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH1095189A (ja) * 1997-07-28 1998-04-14 Hitachi Ltd 半導体装置の製造方法
JP2001267582A (ja) * 2000-03-22 2001-09-28 Mitsubishi Electric Corp 半導体装置、液晶表示装置、半導体装置の製造方法、液晶表示装置の製造方法
JP2003069034A (ja) * 2001-05-08 2003-03-07 Koninkl Philips Electronics Nv フレキシブルなモノリシック集積回路およびその製造方法
JP2003243661A (ja) * 2002-02-14 2003-08-29 Hitachi Ltd 薄膜トランジスタとその製造方法
WO2003096403A1 (en) * 2002-05-13 2003-11-20 Tokyo Electron Limited Method of treating substrate
JP2004343031A (ja) * 2002-12-03 2004-12-02 Advanced Lcd Technologies Development Center Co Ltd 誘電体膜およびその形成方法ならびに誘電体膜を用いた半導体装置およびその製造方法

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH1095189A (ja) * 1997-07-28 1998-04-14 Hitachi Ltd 半導体装置の製造方法
JP2001267582A (ja) * 2000-03-22 2001-09-28 Mitsubishi Electric Corp 半導体装置、液晶表示装置、半導体装置の製造方法、液晶表示装置の製造方法
JP2003069034A (ja) * 2001-05-08 2003-03-07 Koninkl Philips Electronics Nv フレキシブルなモノリシック集積回路およびその製造方法
JP2003243661A (ja) * 2002-02-14 2003-08-29 Hitachi Ltd 薄膜トランジスタとその製造方法
WO2003096403A1 (en) * 2002-05-13 2003-11-20 Tokyo Electron Limited Method of treating substrate
JP2004343031A (ja) * 2002-12-03 2004-12-02 Advanced Lcd Technologies Development Center Co Ltd 誘電体膜およびその形成方法ならびに誘電体膜を用いた半導体装置およびその製造方法

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008235336A (ja) * 2007-03-16 2008-10-02 Semiconductor Energy Lab Co Ltd 半導体装置の作製方法
JP2008251640A (ja) * 2007-03-29 2008-10-16 Tdk Corp 導体パターンの形成方法
JP2014112678A (ja) * 2008-06-06 2014-06-19 Semiconductor Energy Lab Co Ltd 構造体の作製方法
JP2010109356A (ja) * 2008-10-02 2010-05-13 Semiconductor Energy Lab Co Ltd Ｓｏｉ基板の作製方法
US8871610B2 (en) 2008-10-02 2014-10-28 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing SOI substrate
JP2021073740A (ja) * 2008-11-07 2021-05-13 株式会社半導体エネルギー研究所 半導体装置
JP7150906B2 (ja) 2008-11-07 2022-10-11 株式会社半導体エネルギー研究所 半導体装置
US12324189B2 (en) 2008-11-07 2025-06-03 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US9995970B2 (en) 2010-08-17 2018-06-12 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of a liquid crystal device comprising an alignment film formed under reduced pressure
CN113292042A (zh) * 2021-04-22 2021-08-24 江苏度微光学科技有限公司 一种超宽光谱吸收体、制备方法及其在光谱仪中的应用

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