JP2007042671A5 - - Google Patents

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Publication number
JP2007042671A5
JP2007042671A5 JP2005221902A JP2005221902A JP2007042671A5 JP 2007042671 A5 JP2007042671 A5 JP 2007042671A5 JP 2005221902 A JP2005221902 A JP 2005221902A JP 2005221902 A JP2005221902 A JP 2005221902A JP 2007042671 A5 JP2007042671 A5 JP 2007042671A5
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JP
Japan
Prior art keywords
based gas
silicon
processing chamber
substrate
etching
Prior art date
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Granted
Application number
JP2005221902A
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English (en)
Japanese (ja)
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JP2007042671A (ja
JP4832022B2 (ja
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Application filed filed Critical
Priority to JP2005221902A priority Critical patent/JP4832022B2/ja
Priority claimed from JP2005221902A external-priority patent/JP4832022B2/ja
Publication of JP2007042671A publication Critical patent/JP2007042671A/ja
Publication of JP2007042671A5 publication Critical patent/JP2007042671A5/ja
Application granted granted Critical
Publication of JP4832022B2 publication Critical patent/JP4832022B2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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JP2005221902A 2005-07-29 2005-07-29 基板処理装置 Expired - Lifetime JP4832022B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2005221902A JP4832022B2 (ja) 2005-07-29 2005-07-29 基板処理装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2005221902A JP4832022B2 (ja) 2005-07-29 2005-07-29 基板処理装置

Publications (3)

Publication Number Publication Date
JP2007042671A JP2007042671A (ja) 2007-02-15
JP2007042671A5 true JP2007042671A5 (https=) 2008-08-28
JP4832022B2 JP4832022B2 (ja) 2011-12-07

Family

ID=37800410

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2005221902A Expired - Lifetime JP4832022B2 (ja) 2005-07-29 2005-07-29 基板処理装置

Country Status (1)

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JP (1) JP4832022B2 (https=)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7682940B2 (en) * 2004-12-01 2010-03-23 Applied Materials, Inc. Use of Cl2 and/or HCl during silicon epitaxial film formation
JP4464949B2 (ja) 2006-11-10 2010-05-19 株式会社日立国際電気 基板処理装置及び選択エピタキシャル膜成長方法
US8293592B2 (en) * 2008-04-16 2012-10-23 Hitachi Kokusai Electric Inc. Method of manufacturing semiconductor device and substrate processing apparatus
JP5931780B2 (ja) * 2013-03-06 2016-06-08 東京エレクトロン株式会社 選択エピタキシャル成長法および成膜装置

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
IN157312B (https=) * 1982-01-12 1986-03-01 Rca Corp
JPH0247829A (ja) * 1988-08-10 1990-02-16 Toshiba Corp 気相成長装置
JPH0316208A (ja) * 1989-06-14 1991-01-24 Nec Corp シリコンエピタキシャル成長装置
JP3149464B2 (ja) * 1991-06-28 2001-03-26 日本電気株式会社 シリコンエピタキシャル膜の選択成長方法及びその装置
JPH05211123A (ja) * 1992-01-20 1993-08-20 Nec Corp シリコンエピタキシャル膜の成長方法
JP2783037B2 (ja) * 1992-02-18 1998-08-06 日本電気株式会社 気相シリコンエピタキシャル成長装置
JPH0992621A (ja) * 1995-09-28 1997-04-04 Oki Electric Ind Co Ltd 半導体薄膜の選択成長方法
JP4267624B2 (ja) * 2003-08-07 2009-05-27 株式会社日立国際電気 基板処理装置および半導体装置の製造方法
US7468311B2 (en) * 2003-09-30 2008-12-23 Tokyo Electron Limited Deposition of silicon-containing films from hexachlorodisilane
JP4366183B2 (ja) * 2003-12-17 2009-11-18 株式会社日立国際電気 半導体装置の製造方法

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