JP2007028196A - Method of manufacturing elastic boundary wave apparatus and elastic boundary wave apparatus - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a method of manufacturing an elastic boundary wave apparatus which hardly causes the inter-layer peeling or chipping for the dicing. <P>SOLUTION: The manufacturing method comprises steps of forming a plurality of IDT 5 on a piezoelectric material-made mother board 1 for forming a plurality of elastic boundary wave apparatus 2, forming an inter-layer peel preventing metal pattern 7 on at least a part of regions to be diced, forming an insulation film 10 after forming the IDT and the metal pattern 7, dicing a wafer 1 at the dicing regions, and taking out the elastic boundary wave apparatus 2. <P>COPYRIGHT: (C)2007,JPO&INPIT

Description

  The present invention relates to a boundary acoustic wave device manufacturing method and a boundary acoustic wave device in which an insulating film is formed on a piezoelectric substrate, and an IDT is formed at the interface between the piezoelectric substrate and the insulating film, and more particularly, to the boundary acoustic wave device. The present invention also relates to a method for manufacturing a boundary acoustic wave device provided with a structure for preventing peeling at the interface between a piezoelectric substrate and an insulating film, and the boundary acoustic wave device.

  Conventionally, surface acoustic wave devices have been widely used as resonators and filters for communication devices such as mobile phones.

  In the surface acoustic wave device, in general, a large number of electrode structures for a surface acoustic wave device are formed on a wafer made of a piezoelectric material in order to increase mass productivity. And many surface acoustic wave apparatuses were manufactured by cutting a wafer after electrode formation.

  However, chipping tends to occur when a wafer made of a piezoelectric material is cut. Therefore, in Patent Document 1 below, in order to prevent chipping, a closed ring chipping suppression pattern is formed of a metal material so as to surround an electrode such as IDT on the inside of the region to be diced on the wafer. A method is disclosed. In this method, since the closed annular chipping suppression pattern is formed inside the outer peripheral edge of the piezoelectric substrate of the cut-out surface acoustic wave device, it is assumed that chipping has occurred at the outer edge portion of the chipping suppression pattern. However, the spread of chipping is supposed to be held down by the chipping suppression pattern.

  By the way, in the surface acoustic wave device, the IDT is formed on the piezoelectric substrate, and the IDT receives and excites the surface acoustic wave. Therefore, the surface acoustic wave device has to be packaged so as to provide a gap facing the IDT. Therefore, the package structure is complicated, and the product of the surface acoustic wave device has to be large.

In contrast, in recent years, boundary acoustic wave devices using boundary acoustic waves instead of surface acoustic waves have attracted attention. In the boundary acoustic wave device, an IDT is disposed at a boundary between different media, and a boundary acoustic wave excited and excited by the IDT is used. Therefore, since it is not necessary to provide a gap, the size can be reduced.
JP 2004-235705 A

  Also in the above boundary acoustic wave device, a method of dicing the wafer into units of the boundary acoustic wave device after forming a large number of boundary acoustic wave devices on the wafer is adopted for production. In the boundary acoustic wave device, since an insulating film as a medium different from the piezoelectric substrate is laminated on the piezoelectric substrate, delamination may occur at the interface between the two due to dicing. Therefore, unlike the surface acoustic wave device, the boundary acoustic wave device is strongly required to reliably dice each boundary acoustic wave device from the wafer while suppressing delamination as described above.

  On the other hand, the above-described chipping suppression pattern described in Patent Document 1 is only for suppressing the expansion of chipping in a surface acoustic wave device in which the upper surface of the piezoelectric substrate is open, and even when applied to a boundary acoustic wave device, Such delamination cannot be suppressed.

  An object of the present invention is to provide a method of manufacturing a boundary acoustic wave device capable of reliably preventing delamination when the boundary acoustic wave device is cut from a wafer, in view of the above-described state of the art. It is an object of the present invention to provide a boundary acoustic wave device that hardly causes delamination and therefore has excellent reliability.

  According to a wide aspect of the method for manufacturing a boundary acoustic wave device according to the present invention, a step of preparing a mother substrate made of a piezoelectric material, and a plurality of IDTs for configuring a plurality of boundary acoustic wave devices on the mother substrate are provided. Forming a delamination preventing metal pattern in at least a part of a region to be diced on the mother substrate, and forming the IDT and the delamination preventing metal pattern on the mother substrate. There is provided a method of manufacturing a boundary acoustic wave device, comprising: forming an insulating film; and dicing a mother substrate in the region to be diced to take out individual boundary acoustic wave devices.

  In a specific aspect of the method for manufacturing the boundary acoustic wave device according to the present invention, the metal pattern for preventing delamination is formed to be electrically insulated from the IDT.

  In another specific aspect of the manufacturing method according to the present invention, in the step of forming the delamination preventing metal pattern, the delamination preventing metal pattern is formed so as to surround an outer periphery of each of the boundary acoustic wave devices. Is done.

  In still another specific aspect of the manufacturing method according to the present invention, the step of forming the delamination preventing metal pattern is performed simultaneously with the step of forming the IDT using the same conductive material.

  According to still another specific aspect of the manufacturing method according to the present invention, after the step of forming the IDT, the method further includes a step of forming a wiring electrically connected to the IDT, and the metal for preventing delamination A pattern is formed using the same metal material simultaneously with the step of forming the wiring.

  In still another specific aspect of the manufacturing method according to the present invention, a step of forming an insulating film opening that partially exposes the wiring in the insulating film, and an electrical connection with the wiring in the insulating film opening. A step of forming a UBM underlayer so as to be connected, and a step of forming a power supply line electrically connected to the UBM underlayer on the insulating film, the delamination preventing metal pattern comprising: , Formed in a region other than the region below the region where the power supply line is formed.

  According to another broad aspect of the method for manufacturing a boundary acoustic wave device according to the present invention, a step of preparing a mother substrate made of a piezoelectric material, and a plurality of boundary acoustic wave devices for forming a plurality of boundary acoustic wave devices on the mother substrate. Forming an IDT, forming a delamination preventing metal pattern on at least a part of a region of the mother substrate on the mother substrate, and forming a wiring electrically connected to the IDT A step of forming an insulating film on the mother substrate on which the IDT is formed, a step of forming an insulating film opening in the insulating film to partially expose the wiring, and electroless plating Forming a UBM in the insulating film opening so as to be electrically connected to the UBM underlayer; and dicing the mother substrate along a region to be diced to form individual elastic boundaries And a step of taking out the device, method for manufacturing a boundary acoustic wave device is provided.

  The boundary acoustic wave device according to the present invention includes a piezoelectric substrate, an IDT formed on the piezoelectric substrate, and an insulating film formed on the piezoelectric substrate so as to cover the IDT. A delamination preventing metal pattern formed along an edge of the piezoelectric substrate is formed at an interface between the piezoelectric substrate and the insulating film, and at least a part of the delamination preventing metal pattern is an elastic boundary. It is exposed at the end face of the wave device.

  In a specific aspect of the boundary acoustic wave device according to the present invention, the delamination preventing metal pattern is formed in a state of being electrically insulated from the IDT.

  In a more specific aspect of the boundary acoustic wave device according to the present invention, the delamination-preventing metal pattern is formed so as to cover the entire circumference of the outer peripheral edge at the interface between the piezoelectric substrate and the insulating film.

  According to the method for manufacturing a boundary acoustic wave device according to the present invention, a plurality of IDTs are formed on a mother substrate made of a piezoelectric material, and a metal pattern for preventing delamination is formed in at least a part of a region to be diced. After forming an insulating film on the mother substrate on which the IDT and the metal layer for preventing delamination are formed, the mother substrate is diced in the dicing region, and each boundary acoustic wave device is taken out. In this case, since the metal pattern for preventing delamination is formed in at least a part of the region to be diced, delamination is unlikely to occur at the end surface cut out by dicing of the boundary acoustic wave device during dicing.

  That is, since the delamination preventing metal pattern is disposed between the mother substrate and the insulating film, delamination at the interface between the two is suppressed. This is because the delamination-preventing metal pattern and the mother substrate and the insulating film made of the piezoelectric material are bonded not by a simple physical bonding force but by a chemical bond via oxygen in the piezoelectric material or the insulating film. Because it is. Therefore, according to the present invention, a boundary acoustic wave device having excellent environmental resistance characteristics that hardly causes delamination just by dicing after forming an IDT or an insulating film constituting the boundary acoustic wave device on a mother substrate. It becomes possible to manufacture efficiently.

  When the metal layer for preventing delamination is formed so as to be electrically insulated from IDT, even if moisture enters during dicing, the metal pattern for preventing delamination and IDT are electrically insulated. Therefore, an undesired short circuit can be prevented.

  When the metal pattern for preventing delamination is formed so as to surround the outer periphery of each boundary acoustic wave device, the delamination preventing effect can be further enhanced.

  When the step of forming the delamination preventing metal pattern is performed using the same conductive material simultaneously with the step of forming the IDT, the delamination preventing metal pattern may be formed without increasing the number of steps. it can.

  When a step of forming a wiring electrically connected to the IDT is further provided after the step of forming the IDT, and the delamination preventing metal pattern is performed using the same metal material simultaneously with the step of forming the wiring. The metal pattern for preventing delamination can be formed simultaneously with the wiring without increasing the number of steps.

  An insulating film opening that partially exposes the wiring is formed in the insulating film, and a UBM base layer is formed in the insulating film opening so as to be electrically connected to the wiring. Each step of forming a power supply line connected to the insulating film on the insulating film, and if the metal pattern for preventing delamination is not formed below the region where the power supply line is formed, An undesired short circuit between the line and the metal pattern for preventing delamination can be prevented, and a UBM can be easily formed by electrolytic plating on the UBM underlayer by flowing a current from the power supply line. it can.

  Similarly, in the second invention of the present application, an insulating film opening for partially exposing the wiring is formed in the insulating film, and is electrically connected to the UBM underlayer on the insulating film opening by electroless plating. Since the UBM is formed as described above, the boundary acoustic wave device provided with the UBM can be easily provided after dicing.

  In the boundary acoustic wave device according to the present invention, at the interface between the piezoelectric substrate and the insulating film, the delamination preventing metal pattern formed at least partially along the edge of the piezoelectric substrate is formed. The metal pattern for peeling prevention, the insulating film, and the piezoelectric substrate are chemically bonded, and thus the piezoelectric substrate and the insulating film are firmly bonded at the end face. Therefore, chipping and delamination are unlikely to occur during manufacturing, and environmental resistance characteristics during actual use can be effectively enhanced.

  In particular, when the metal pattern for preventing delamination is electrically insulated from the IDT, even if moisture at the time of dicing or the like penetrates from the end face formed by cutting along the metal pattern for preventing delamination, It is difficult for moisture to reach the IDT formation portion, and therefore, fluctuations in characteristics can be reliably suppressed.

  When the metal pattern for preventing delamination is formed so as to extend over the entire outer periphery of the boundary acoustic wave device, the delamination metal pattern for delamination between the piezoelectric substrate and the insulating film is more reliable. Therefore, it is possible to provide a boundary acoustic wave device with even higher reliability.

  Hereinafter, the present invention will be clarified by describing specific embodiments of the present invention with reference to the drawings.

  A method for manufacturing a boundary acoustic wave device according to the first embodiment of the present invention will be described with reference to FIGS.

In the present embodiment, first, a wafer 1 as a mother substrate made of a piezoelectric material is prepared. As the piezoelectric material, a piezoelectric single crystal such as LiTaO ₃ , LiNbO ₃ or quartz, or piezoelectric ceramics can be used.

  FIG. 1A is a plan view schematically showing a state in which a large number of boundary acoustic wave devices are formed on the wafer 1. In FIG. 1A, the portions where the individual boundary acoustic wave devices 2 are arranged are arranged in a matrix, and conductive dicing lines 3 and 4 are provided between the plurality of boundary acoustic wave devices 2 and 2. Is extended. The dicing line 3 extends in the Y direction and the dicing line 4 extends in the X direction. By performing dicing along the dicing lines 3 and 4 and removing portions where the dicing lines 3 and 4 are provided, the wafer 1 is separated into individual boundary acoustic wave devices 2 as shown in FIG. Divided.

  It should be noted that FIGS. 1A and 2 are plan views schematically showing a state after various electrode structures described later are formed on the wafer 1. Further, in FIGS. 1A and 1B and FIG. 2, in order to show the electrode structure, only the shape of the electrode structure is schematically shown except for the insulating film and the sound absorbing film. Further, FIG. 1B is an enlarged view showing a part of the wafer 1, but here, the dicing lines 3 and 4 in FIG. 1A are not shown. That is, as will be described later, the dicing lines 3 and 4 are formed above the other electrodes, that is, at a height position between an insulating film and a sound absorbing film, which will be described later, but in FIG. The state where the insulating film and the sound absorbing film are removed is shown enlarged. Accordingly, the dicing lines 3 and 4 are not shown in FIG. Moreover, in FIG. 1A and FIG. 2, the functional part 2a provided with the electrode structure of the boundary acoustic wave device including the IDT is schematically shown as if it were a rectangular region.

  As shown in an enlarged view in FIG. 1B, the functional unit 2a is provided with reflectors 6a and 6b disposed on both sides of the IDT 5 and IDT 5 in the boundary acoustic wave propagation direction. But the electrode structure which forms the function part 2a is not specifically limited as long as it has at least 1 IDT. That is, the electrode structure of the functional unit 2a can be appropriately modified according to the required functions of a resonator, a filter, and the like.

  In the present embodiment, one functional unit 2a is formed, but two or more functional units 2a may be formed in order to configure a dual filter or a duplexer.

  When manufacturing the boundary acoustic wave device 2, first, as shown in FIG. 5A, electrodes for forming the functional unit 2 a including the IDT 5 are formed on the wafer 1. Simultaneously with the formation of the IDT electrode 5, the delamination preventing metal pattern 7 is simultaneously formed of the same material.

  5A is an enlarged view of a portion where boundary acoustic wave devices 2 and 2 are adjacent to each other in FIG. That is, the portion surrounded by the alternate long and short dash line P, P in FIG. 5A is a portion finally removed by dicing. The delamination-preventing metal pattern 7 is formed to have a width wider than a region removed by this dicing line. As is clear from FIG. 1A, the metal layer 7 for preventing delamination is formed so as to reach both sides of the dicing region in the width direction in a part of the region removed by dicing.

  At the time of dicing, cutting and removal are performed with the dicing lines 3 and 4 in FIG. That is, the region where the dicing lines 3 and 4 of FIG. 1A are formed is removed and dicing is performed. Accordingly, the region to be diced, that is, the dicing region is a region including the dicing lines 3 and 4. Therefore, in other words, the delamination preventing metal pattern 7 is formed on a part of the dicing line 3 below the dicing line 3 extending in the Y direction.

  As is clear from FIG. 1A, the dicing line 4, that is, the dicing line extending in the X direction also partially reaches the both sides of the dicing line 4. It is formed wider than 4.

  Although the metal material which comprises the said IDT5 and the metal pattern 7 for delamination prevention is not specifically limited, For example, it can comprise with Al, Cu, or these alloys.

  Further, in the IDT 5 and the metal pattern 7 for preventing delamination, an adhesion layer may be laminated as a base layer in order to increase the adhesion strength to the wafer 1 made of a piezoelectric material. As a material constituting such an adhesion layer, for example, the adhesion to the piezoelectric material is higher than that of the metal constituting the main electrode layer such as Al, Cu, Au, Ni or Pt, such as Ni, NiCr or Ti. An excellent metal material can be used.

  In the delamination preventing metal pattern 7, the portion sandwiched by the alternate long and short dash lines A and A is removed during dicing. As a result, after dicing, the portions 7a and 7b outside the region to be removed remain and are exposed at the end face of the boundary acoustic wave device cut out by dicing.

  The metal layer 7 for preventing delamination acts to prevent delamination at the end face and to suppress chipping during dicing. This is because the delamination preventing metal pattern 7 is firmly bonded to the wafer 1 made of a piezoelectric material and an insulating film described later by chemical bonding via oxygen. That is, compared with the case where the wafer 1 and an insulating film to be described later are directly laminated, the adhesion strength is increased in the portion where the metal pattern 7 for preventing delamination is formed, thereby delamination and chipping. Is reliably suppressed.

  Accordingly, the metal material constituting the delamination preventing metal pattern 7 can increase the delamination strength by introducing a chemical bond as compared with the case where the piezoelectric material and the insulating film are directly laminated as described above. Any suitable metal can be used.

  However, in this embodiment, it is possible to improve productivity by forming simultaneously with the same material as IDT5. However, the delamination preventing metal pattern 7 may be formed of a material different from that of the IDT 5 and in a different process.

  Next, as illustrated in FIG. 5B, the wiring 9 is formed so as to be electrically connected to the IDT 5. The wiring 9 is a conductive portion that is electrically connected to the IDT 5 and is made of an appropriate metal such as Al, Cu, Au, Ni, or Pt. In the wiring 9 as well, an adhesion layer such as Ni, NiCr, or Ti may be laminated on the base in order to improve adhesion to the wafer 1.

  When the wiring 9 is formed, a conductive line 9 a having a width narrower than that of the delamination preventing metal pattern 7 and substantially the same as that of the dicing line 3 is simultaneously formed on the delamination preventing metal pattern 7. The conductive line 9a is removed together with a part of the delamination preventing metal pattern 7 existing on the base during dicing. The conductive line 9a is not necessarily formed, but the dicing line 3 can be easily formed using the conductive line 9a as a mark by forming the conductive line 9a. The conductive line 9a may be thinner or thicker than the dicing line 3.

Next, as shown in FIG. 5C, an insulating film 10 is formed on the entire surface of the wafer 1 so as to cover the IDT 5. In this embodiment, the insulating film 10 is formed by sputtering SiO ₂ . However, the insulating film 10 is made of an insulating material other than SiO ₂ as long as it can receive and receive an elastic boundary wave in the IDT 5 provided at the boundary between the insulating film 10 and the wafer 1 made of a piezoelectric material. Also good. As such an insulating material, in addition to SiO ₂ , an inorganic insulating material such as SiN or SiON can be used as appropriate.

  Although the thickness of the insulating film 10 is not particularly limited, in the present embodiment, when the wavelength of the boundary acoustic wave is λ, the thickness is about 0.7λ to 3λ, more specifically, about several μm to several tens μm. Has been. In order to receive and receive the boundary acoustic wave, the insulating film 10 desirably has this thickness.

  On the other hand, as described above, in the structure in which the thick insulating film 10 is formed on the wafer 1 as described above, peeling between the wafer 1 and the insulating film 10 is likely to occur during dicing as described above. Become. On the other hand, in this embodiment, delamination is reliably suppressed by the presence of the above-described delamination preventing metal pattern 7.

  In addition, the formation method of the said insulating film 10 is not restricted to sputtering, The other thin film or thick film formation method, a printing method, etc. can be used suitably.

  Next, as illustrated in FIG. 5D, an insulating film opening 10 a is formed in the insulating film 10. The insulating film opening 10a can be formed by an appropriate method such as reactive ion etching. The insulating film opening 10 a is formed so as to expose the wiring 9.

  Next, as shown in FIG. 6A, the UBM foundation layer 11 and the dicing line 3 are formed simultaneously. The UBM foundation layer 11 is made of the same electrode material as that of the wiring 9, and is preferably made thicker than the thickness of the wiring 9 to reduce the specific resistance. Preferably, as in the case of the wiring 9, an adhesion layer may be formed on the base. More preferably, the UBM underlayer 11 may have a corrosion resistant layer such as a Pt layer formed thereon. By forming the corrosion-resistant layer, it is possible to improve the environmental resistance against corrosion caused by moisture intrusion during dicing.

  The UBM foundation layer 11 reaches the insulating film opening 10 a and is electrically connected to the wiring 9.

  Next, as shown in FIG. 6B, a sound absorbing film 12 is formed on the entire surface so as to cover the insulating film 10. In this embodiment, the sound absorbing film 12 is formed by laminating synthetic resin films such as translucent polyimide or translucent epoxy resin. The material constituting the sound absorbing film 12 may be a synthetic resin other than an epoxy resin or polyimide, or may be a silicon resin. By forming the sound absorbing film 12, the bulk wave radiated from the IDT 5 can be absorbed, which is desirable. However, in the present invention, the sound absorbing film 12 is not necessarily provided.

  Next, as shown in FIG. 7A, the sound absorbing film opening 12a is formed in the cross-sectional portion indicated by the line CC in FIG. The sound absorbing film opening 12a can be formed by an appropriate method such as reactive ion etching. Further, when forming the sound absorbing film opening film 12a, an opening process is performed so that the sound absorbing film opening 12a is connected to the insulating film opening 10a formed below and the insulating film opening 10a is formed again. Is called. As a result, the UBM foundation layer 11 is exposed at the bottom of the sound absorbing film opening 12a and the insulating film opening 10a.

  Next, as shown in FIG. 7B, the UBM 13 is formed by electrolytic plating in the portion where the sound absorbing film opening 12a is provided. In this embodiment, the UBM 13 is formed by electrolytic plating of Ni or Au. But UBM13 may be comprised with metals other than Ni and Au. The electrolytic plating is performed by energizing from the dicing lines 3 and 4 (see FIG. 1) connected to the UBM underlayer 11.

  As shown in FIG. 7C, solder bumps 14 are formed on the UBM 13.

  Thereafter, the wafer 1 is diced as shown in FIGS. 6 (c) and 7 (d). FIG. 6C shows the dicing state of the portion along the line BB in FIG. 1A described above, and FIG. 7D shows the portion of the portion along the line CC in FIG. Indicates the dicing state.

  As described above, as shown in FIG. 2, the wafer 1 is diced to obtain individual boundary acoustic wave devices 2.

  In this case, since the delamination preventing metal pattern 7 is provided, delamination hardly occurs on the end face 2b when dicing along the dicing lines 3 and 4.

  The states before and after dicing are shown enlarged in FIGS. 3 (a) and 3 (b) and FIGS. 4 (a) and 4 (b). 3A shows the state before dicing of the portion along the line BB in FIG. 1A, FIG. 3B shows the state after dicing, and FIGS. 6B and 6C described above. Each corresponds to the figure shown in FIG.

  Here, the portions 7a and 7b of the delamination preventing metal pattern 7 are exposed at the end faces 2b and 2b cut out by dicing.

  On the other hand, FIGS. 4A and 4B are enlarged cross-sectional views showing a state before and after dicing of the portion along the line CC in FIG. 1A, and FIG. 7C and FIG. It is a figure which expands and shows the center part of the part shown to d).

  As is clear from FIGS. 4A and 4B, in the portion along the line CC in FIG. 1A, the UBM underlayer 11 is electrically connected to the functional portion including the IDT 5. Correspondingly, the delamination preventing metal pattern 7 is not formed in this portion. That is, the metal pattern 7a is made of the same metal material as the delamination preventing metal pattern 7, but the metal pattern 7a is equal to or narrower than the width of the dicing line. Therefore, after dicing, a part of the metal layer for preventing delamination is not exposed at the end face, and the piezoelectric plate and the insulating film are directly joined at the end face 2b.

  3A, the delamination preventing metal pattern 7 is formed below the conductive line 9a and the dicing lines 3 and 4, but is formed in a part of the dicing region. In addition, it is electrically insulated from the functional unit including the IDT 5. Therefore, even if the portions 7a and 7b of the delamination-preventing metal pattern 7 are exposed on the end face 2b after dicing and moisture or the like enters from the portions 7a and 7b, the portions 7a and 7b and the IDT 5 are electrically insulated. Therefore, it is difficult for a short circuit and deterioration of characteristics due to the ingress of moisture.

  In the first embodiment, the delamination preventing metal pattern 7 is formed on a part of the outer peripheral portion of the boundary acoustic wave device 2, that is, a part of the dicing lines 3 and 4. The metal layer for preventing delamination may be formed over the entire circumference of one boundary acoustic wave device formed on the wafer. In other words, a delamination preventing metal pattern may be formed in the entire dicing region. Such an embodiment is shown in FIGS. 8A and 8B and FIGS. 9A and 9B.

  FIG. 8A is a schematic plan view showing a state before etching the wafer 1 in the second embodiment, and corresponds to FIG. 1A shown for the first embodiment. FIG. 8B is a plan view schematically showing the shape of the delamination preventing metal pattern.

  As is clear from FIG. 8A, in the wafer 1, a plurality of dicing lines 3 extending in the Y direction are extended in parallel, and a plurality of dicing lines 4 extending in the X direction are extended in parallel. . In the present embodiment, the delamination preventing metal pattern 21 is formed on the entire outer periphery of the rectangular portion surrounded by the dicing lines 3, 4, that is, the portion where one elastic boundary wave device 2 is configured. ing. In FIG. 8A, a part of the UBM foundation layer 11 is disposed so as to electrically connect the dicing line 3 or 4 and the functional unit 2a. The underlayer 11 is formed at a height above the annular delamination preventing metal pattern 21. That is, the delamination preventing metal pattern 21 shown in FIG. 8A has a closed annular shape so as to surround the functional portion 2a.

  That is, as schematically shown in FIG. 8B, an annular delamination preventing metal pattern 21 is formed so as to straddle between adjacent boundary acoustic wave devices 2 and 2. In FIG. 8B, the outer shape of the adjacent boundary acoustic wave device 2 is schematically shown by a one-dot chain line, and the outer edge of the delamination preventing metal pattern 21 is shown by a broken line. In FIG. 8B, illustration of other structures is omitted for easy understanding. As is clear from FIG. 8B, in one boundary acoustic wave device 2, the outer peripheral edge is surrounded by the annular delamination preventing metal pattern 21 after dicing.

  FIG. 9A is a partially enlarged cross-sectional view showing a state before dicing in a portion in which the UBM underlayer is electrically connected to a functional portion including IDT in the second embodiment, and FIG. ) Is a diagram showing a state after dicing this portion. That is, FIGS. 9A and 9B are diagrams corresponding to FIGS. 4A and 4B shown in the first embodiment.

  In the second embodiment, even in the portion where the UBM underlayer is electrically connected to the functional portion including the IDT 5, a part of the delamination preventing metal pattern 21 is removed by dicing to obtain the portions 21a and 21b. The exposed boundary acoustic wave devices 2 and 2 are exposed at the end surfaces 2b and 2b. In the second embodiment, since the delamination preventing metal pattern 21 has a closed annular shape as described above, the end face other than the portion shown in FIGS. 9A and 9B is used. That is, delamination is ensured by the portions 21a and 21b of the delamination preventing metal pattern 21 even at the cut end surface by dicing corresponding to the portion where the UBM underlayer is not electrically connected to the functional portion 2a including the IDT. Has been prevented.

  In the case where the delamination preventing metal pattern 7 is formed on the entire outer periphery of the boundary acoustic wave device 2 as in the second embodiment, the delamination is performed over the entire circumference in the cut out boundary acoustic wave device 2. Is unlikely to occur.

  FIGS. 10A and 10B are schematic plan views for explaining the manufacturing method of the boundary acoustic wave device according to the third embodiment, and are views corresponding to FIGS. 1A and 1C. is there. In the third embodiment, the wafer 1 is diced along the dicing lines 3 and 4 as in the first embodiment, and the individual boundary acoustic wave devices 2 are cut out. In manufacturing the boundary acoustic wave device according to the third embodiment, first, an IDT 5 is formed on the wafer 1 as shown in FIG. The IDT 5 is formed in the same manner as the IDT 5 of the first embodiment. However, in the third embodiment, the delamination preventing metal pattern 7 is not formed simultaneously with the IDT 5. Next, the wiring 9 is formed so as to be electrically connected to the IDT 5. The wiring 9 is formed in the same manner as in the first embodiment. The third embodiment differs from the first embodiment in that when the wiring 9 is formed, the metal layer 31 for preventing delamination is simultaneously formed of the same material as that of the wiring 9.

  Next, the insulating film 10 is formed. Thereafter, as shown in FIG. 11B, an insulating film opening 10 a is formed in the insulating film 10 so as to expose the wiring 9. Further, in the present embodiment, unlike the first embodiment, the grooves 32 are formed in the dicing region. The groove 32 is formed in a portion where the dicing line 3 extends, but a groove is similarly formed in a portion where the dicing line 4 extends. That is, in the present embodiment, the insulating film is removed by forming the groove 32 in advance in the region to be removed by dicing. Therefore, a part of the delamination preventing metal pattern 31 is exposed in the groove 32.

  Next, as shown in FIG. 11C, the UBM foundation layer 11 is formed in the same manner as in the first embodiment. In this case, the metal pattern 11 a made of the same material as the UBM foundation layer 11 is formed in the groove 32.

  Next, as in the case of the first embodiment, the sound absorbing film 12 made of a resin film is formed. In this case, since the insulating film 10 does not exist in the portion where the insulating film opening 10a and the groove 32 are formed, the material constituting the sound absorbing film 12 is filled in the groove 32, and accordingly, the upper surface of the sound absorbing film 12 is filled. In this case, a groove 12a is formed.

  Thereafter, by dicing, adjacent boundary acoustic wave devices are divided as shown in FIG. 11 (e), and portions 31 a of the delamination preventing metal pattern 31 are formed on the end faces 2 b and 2 b of the boundary acoustic wave device 2. , 31b are exposed.

  The states before and after dicing shown in FIGS. 11D and 11E are enlarged and shown in FIGS. 13A and 13B. This portion corresponds to a portion where the UBM foundation layer 11 is not connected to the IDT constituting the functional unit.

  On the other hand, as shown in the first embodiment, the state of the portion where the UBM underlayer is electrically connected to the functional unit is shown in FIGS. 12 (a) to 12 (f) and FIGS. 14 (a) and 14 (b). ) Will be described. In this portion, as shown in FIG. 12A, the UBM underlayer 11 is formed so as to reach a portion where it is removed by dicing. That is, the UBM foundation layer 11 enters the groove 32 and is connected to the upper surface of the delamination preventing metal pattern 31 exposed at the bottom of the groove 32.

  Thereafter, after the sound absorbing film 12 is formed, the sound absorbing film 12 enters the groove 32, and a groove 12 a is formed on the upper surface of the sound absorbing film 12. Then, as shown in FIG. 12C, the sound absorbing film opening 12a is formed in the sound absorbing film 12, and the insulating film opening 10a is also exposed again. Then, the UBM 13 and the solder bumps 14 are formed in the same manner as in the first embodiment. In this way, the solder bumps 14 and the UBM 13 are formed as shown in FIGS. 12 (d) and 12 (e). Thereafter, as shown in FIG. 12F, adjacent boundary acoustic wave devices 2 and 2 are divided by dicing. The states before and after dicing shown in FIGS. 12E and 12F are enlarged and shown in FIGS. 14A and 14B.

  In the present embodiment, the delamination preventing metal pattern 31 is also present in the portion where the UBM underlayer 11 is electrically connected to the IDT. However, after the dicing, the delamination preventing metal pattern 31 is formed. The remaining portions 31 a and 31 b are separated from the UBM foundation layer 11. Therefore, even if moisture or the like enters from the end face 2b, fluctuations in characteristics due to the penetration of moisture from the portions 31a and 31b side of the delamination preventing metal pattern 31 hardly occur.

  In the present embodiment, since the insulating film 10 is not formed in the region to be diced, wear of the dicing blade can be suppressed and the dicing speed can be increased. Therefore, the manufacturing cost can be reduced.

  A manufacturing method according to the fourth embodiment of the present invention will be described with reference to FIGS. 15 (a) and 15 (b) and FIGS. 16 (a) and 16 (b).

  In the fourth embodiment, boundary acoustic wave devices 2 are arranged in a matrix on the wafer 1 as shown in a schematic plan view in FIG.

  By the way, in this embodiment, the delamination preventing metal pattern 41 is formed over the entire outer periphery of each boundary acoustic wave device 2 as in the second embodiment described above. Therefore, as in the case of the second embodiment, during dicing, chipping hardly occurs over the entire circumference of each boundary acoustic wave device 2, and delamination does not easily occur on the cut end face.

  In the fourth embodiment, as in the case of the third embodiment, no insulating film is formed in the dicing region. That is, FIGS. 16A and 16B are enlarged sectional views before dicing of a portion crossing the dicing region, and FIG. 16B is an enlarged sectional view after dicing in the fourth embodiment. It is. Although the insulating film 10 and the sound absorbing film 12 are laminated on the wafer 1, the insulating film 10 is not formed in the dicing region. Therefore, as in the case of the third embodiment, wear of the dicing blade can be suppressed, and the dicing speed can be increased.

  In addition, as in the case of the third embodiment, the delamination preventing metal pattern 41 is formed of the same material as that of the wiring 9 at the same time. Accordingly, when forming the delamination preventing metal pattern 51, no extra material is required and the number of steps is not increased.

  In addition, the conductive dicing line for the said dicing is not formed. That is, in the fourth embodiment, as described above, the UBM is formed by electroless plating. Therefore, it is not necessary to form the UBM by power supply using a conductive dicing line. Therefore, in the fourth embodiment, dicing is performed with reference to the metal pattern 51 to prevent delamination. That is, the metal pattern is exposed to prevent delamination at the opening of the insulating film, and the insulating film and the sound absorbing film 12 are made of a transparent or translucent material, so that the position of the metal pattern 51 for delamination prevention is set to the sound absorbing film. 12 can be confirmed from above.

  Further, as is clear from FIGS. 16A and 16B, the UBM foundation layer 11 is not formed. Therefore, in this embodiment, the UBM is formed not by electrolytic plating but by electroless plating. In other respects, the fourth embodiment is the same as the third embodiment.

  Thus, in the present invention, the UBM does not necessarily have to be formed by electrolytic plating, and may be formed by electroless plating. In this case, the UBM foundation layer 11 may not be formed.

  Therefore, it is not necessary to form the UBM foundation layer 11 and perform power supply for electrolytic plating. Therefore, according to the fourth embodiment, there is no possibility of short circuit between the UBM foundation layer and the delamination preventing metal pattern. Therefore, since it is not necessary to form the UBM foundation layer 11, the number of processes can be reduced, and the speed of the dicing process can be increased.

(A) is a top view which shows typically the wafer before dicing in the manufacturing method of 1st Embodiment, (b) is a schematic top view which expands and shows the principal part of (a), c) A plan view schematically showing a state after dicing. The typical partial enlarged plan view which shows the state after forming the electrode structure in the manufacturing method of 1st Embodiment. (A) is a partial expanded sectional view which shows the state before dicing of the part in alignment with the BB line of FIG. 2, (b) is a partial expanded sectional view which shows the state after the dicing of the same part. (A) is a partial expanded sectional view which shows the state before dicing of the part in alignment with CC line of FIG. 2, (b) is a partial expanded sectional view which shows the state after the dicing of the same part. (A)-(d) is each partial notch sectional drawing for demonstrating the process of forming various electrodes and an insulating film on a wafer in 1st Embodiment. (A)-(c) is a partial notch sectional drawing for demonstrating each process of forming a sound absorption film and dicing after insulating film formation in 1st Embodiment. (A)-(d) is a partial notch sectional view for demonstrating each process of forming UBM and a solder bump in the manufacturing method of 1st Embodiment. (A) And (b) is the top view which shows the state after the dicing of the metal pattern for a delamination prevention metal pattern for a wafer before dicing in the manufacturing method of 2nd Embodiment typically. (A) And (b) is a typical partial expanded section which shows each state before dicing and after dicing in a portion where a UBM foundation layer is electrically connected with a functional part in a manufacturing method of a 2nd embodiment. Figure. (A) And (b) is each typical top view which shows the state before dicing a wafer and the state after dicing in the 3rd Embodiment of this invention. (A)-(e) is each partial notch sectional drawing for demonstrating the manufacturing process of 3rd Embodiment. (A)-(f) is each partial notch sectional drawing for demonstrating the manufacturing process of the part in which UBM and a solder bump are formed in 3rd Embodiment. (A) And (b) is a partial expanded sectional view which shows the state before dicing in the manufacturing method of 3rd Embodiment, and the state after dicing in the part which is not electrically connected to a functional part. . (A) And (b) is the partial expanded sectional view which shows the state before dicing in the manufacturing method of 3rd Embodiment, and the state after dicing in the part in which the UBM foundation layer is electrically connected with the function part. . (A) And (b) is a schematic plan view which shows the wafer before dicing in the manufacturing method of 4th Embodiment, and a schematic plan view which shows the state after dicing. (A) And (b) is the partial notch sectional view which shows the adjacent boundary acoustic wave apparatus before dicing in the manufacturing method of 4th Embodiment, (b) is the partial notch which shows the state after the dicing of the part FIG.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 ... Wafer 2 ... Elastic boundary wave apparatus 2a ... Functional part 2b ... End surface 3 ... Dicing line 4 ... Dicing line 5 ... IDT
7 ... Metallization pattern for preventing delamination 9 ... Wiring 9a ... Conductive line 10 ... Insulating film 10a ... Insulating film opening 11 ... UBM underlayer 12 ... Sound absorbing film 12a ... Sound absorbing film opening 13 ... UBM
DESCRIPTION OF SYMBOLS 14 ... Solder bump 21 ... Metal pattern for preventing delamination 31 ... Metal pattern for preventing delamination 32 ... Groove 51 ... Metal pattern for preventing delamination

Claims (10)

Preparing a mother substrate made of a piezoelectric material;
Forming a plurality of IDTs for forming a plurality of boundary acoustic wave devices on the mother substrate;
Forming a metal pattern for preventing delamination in at least a part of a region to be diced on the mother substrate;
Forming an insulating film on the mother substrate on which the IDT and the metal layer for preventing delamination are formed;
And a step of dicing the mother substrate in the region to be diced to take out each boundary acoustic wave device.   The method of manufacturing a boundary acoustic wave device according to claim 1, wherein the delamination preventing metal pattern is formed to be electrically insulated from the IDT.   The boundary acoustic wave according to claim 1 or 2, wherein in the step of forming the delamination preventing metal pattern, the delamination preventing metal pattern is formed so as to surround an outer periphery of each of the boundary acoustic wave devices. Device manufacturing method.   4. The boundary acoustic wave device according to claim 1, wherein the step of forming the metal layer for preventing delamination is performed simultaneously with the step of forming the IDT, using the same conductive material. 5. Production method. After the step of forming the IDT, further comprising a step of forming a wiring electrically connected to the IDT;
The method for manufacturing a boundary acoustic wave device according to any one of claims 1 to 3, wherein the metal pattern for preventing delamination is performed using the same metal material simultaneously with the step of forming the wiring. Forming an insulating film opening that partially exposes the wiring in the insulating film;
Forming a UBM foundation layer so as to be electrically connected to the wiring in the insulating film opening;
Forming a power supply line electrically connected to the UBM underlayer on the insulating film;
The method for manufacturing a boundary acoustic wave device according to claim 5, wherein the delamination preventing metal pattern is formed in a region other than a region below the region where the feed line is formed. Preparing a mother substrate made of a piezoelectric material;
Forming a plurality of IDTs to form a plurality of boundary acoustic wave devices on the mother substrate, and a metal pattern for preventing delamination in at least a part of the dicing region of the mother substrate on the mother substrate Forming a step;
Forming a wiring electrically connected to the IDT;
Forming an insulating film on the mother substrate on which the IDT is formed;
Forming an insulating film opening that partially exposes the wiring in the insulating film;
Forming a UBM in the opening of the insulating film by electroless plating so as to be electrically connected to the UBM underlayer;
And a step of taking out each boundary acoustic wave device by dicing the mother substrate along a dicing line region. In a boundary acoustic wave device including a piezoelectric substrate, an IDT formed on the piezoelectric substrate, and an insulating film formed on the piezoelectric substrate so as to cover the IDT,
A delamination preventing metal pattern formed along an edge of the piezoelectric substrate is formed at an interface between the piezoelectric substrate and the insulating film, and at least a part of the delamination preventing metal pattern is elastic. A boundary acoustic wave device exposed at an end face of the boundary wave device.   The boundary acoustic wave device according to claim 8, wherein the delamination preventing metal pattern is formed in a state of being electrically insulated from the IDT. The boundary acoustic wave device according to claim 8 or 9, wherein the delamination-preventing metal pattern is formed so as to extend over the entire circumference of the outer peripheral edge at the interface between the piezoelectric substrate and the insulating film.

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