JP5483851B2 - Manufacturing method of surface acoustic wave device - Google Patents

Manufacturing method of surface acoustic wave device Download PDF

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JP5483851B2
JP5483851B2 JP2008246139A JP2008246139A JP5483851B2 JP 5483851 B2 JP5483851 B2 JP 5483851B2 JP 2008246139 A JP2008246139 A JP 2008246139A JP 2008246139 A JP2008246139 A JP 2008246139A JP 5483851 B2 JP5483851 B2 JP 5483851B2
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conductive film
idt electrode
acoustic wave
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JP2010081211A (en
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恒 中島
一弘 大塚
史朗 作島
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Kyocera Corp
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Description

本発明は、弾性表面波装置及びその製造方法に関する。   The present invention relates to a surface acoustic wave device and a method for manufacturing the same.

従来、単一の圧電基板上に互いに異なる周波数特性を有するＩＤＴ電極を複数形成した弾性表面波装置が種々提案されている。例えば、特許文献１に記載された弾性表面波装置では、２種類のＩＤＴ電極の膜厚を互いに異ならせることによって、２つの周波数特性を得ている。
特開平１０−１４５１７２号公報 Conventionally, various surface acoustic wave devices have been proposed in which a plurality of IDT electrodes having different frequency characteristics are formed on a single piezoelectric substrate. For example, in the surface acoustic wave device described in Patent Document 1, two frequency characteristics are obtained by making film thicknesses of two types of IDT electrodes different from each other.
Japanese Patent Laid-Open No. 10-145172

しかしながら、特許文献１の弾性表面波装置では、ＩＤＴ電極を構成する導電膜が単一の材料層で構成されている。そして、ＩＤＴ電極を構成する導電膜は、一般的にＡｌやＡｌ合金等の比較的耐電力特性の弱い材料で形成されているため、メカニカルマイグレーションによるＩＤＴ電極の短絡や断線が発生するという問題があった。   However, in the surface acoustic wave device of Patent Document 1, the conductive film constituting the IDT electrode is formed of a single material layer. And since the electrically conductive film which comprises an IDT electrode is generally formed with the material with comparatively weak power-proof characteristics, such as Al and Al alloy, the problem that the short circuit and disconnection of an IDT electrode by mechanical migration generate | occur | produces. there were.

本発明は、上記問題を解決するためになされたものであり、異なる複数の周波数特性を有すると共に、ＩＤＴ電極のメカニカルマイグレーションを抑制した弾性表面波装置及びその製造方法を提供することを目的とする。   The present invention has been made to solve the above-described problem, and an object thereof is to provide a surface acoustic wave device having a plurality of different frequency characteristics and suppressing mechanical migration of an IDT electrode, and a method for manufacturing the same. .

本発明に係る弾性表面波装置は、圧電基板と、前記圧電基板上に形成され、第１導電膜を有する第１のＩＤＴ電極と、前記圧電基板上に形成された第２のＩＤＴ電極であって、前記第１導電膜、第２導電膜及び第３導電膜を順次積層した第１の積層体を有する第２のＩＤＴ電極と、を備えるとともに、前記第２導電膜がＴｉからなり、前記第１導電膜及び前記第３導電膜が前記第２導電膜とは異なる材料で構成されていることを特徴とする。   The surface acoustic wave device according to the present invention includes a piezoelectric substrate, a first IDT electrode formed on the piezoelectric substrate and having a first conductive film, and a second IDT electrode formed on the piezoelectric substrate. And a second IDT electrode having a first stacked body in which the first conductive film, the second conductive film, and the third conductive film are sequentially stacked, and the second conductive film is made of Ti, The first conductive film and the third conductive film are made of a material different from that of the second conductive film.

また、上記弾性表面波装置において、前記第１のＩＤＴ電極は、前記第１導電膜及び前記第２導電膜を順次積層した第２の積層体を有するように構成してもよい。   In the surface acoustic wave device, the first IDT electrode may include a second stacked body in which the first conductive film and the second conductive film are sequentially stacked.

また、前記第１導電膜及び前記第３導電膜は、Ａｌ、Ａｌ合金、Ａｇ、Ａｇ合金、Ｃｕ及びＣｕ合金のうちの一つからなるように構成することが好ましい。   Further, it is preferable that the first conductive film and the third conductive film are made of one of Al, Al alloy, Ag, Ag alloy, Cu, and Cu alloy.

本発明に係る弾性表面波装置の製造方法は、圧電基板上に、第１のＩＤＴ電極及び第２のＩＤＴ電極を備えた弾性表面波装置を製造する方法であって、前記圧電基板上に、第１導電膜、第２導電膜及び第３導電膜を順次積層した積層体を形成する工程と、前記第３導電膜を選択的にエッチングし、前記積層体に、前記第1導電膜及び前記第２導電膜からなる第1領域と、前記第1導電膜、前記第２導電膜及び前記第３導電膜からなる第２領域とを形成する工程と、前記積層体の前記第１領域をエッチングすることにより前記第１のＩＤＴ電極を形成する工程と、前記積層体の前記第２領域をエッチングすることにより前記第２のＩＤＴ電極を形成する工程と、を備えることを特徴とする。   A method for manufacturing a surface acoustic wave device according to the present invention is a method for manufacturing a surface acoustic wave device including a first IDT electrode and a second IDT electrode on a piezoelectric substrate. Forming a stacked body in which a first conductive film, a second conductive film, and a third conductive film are sequentially stacked; and selectively etching the third conductive film; Forming a first region made of a second conductive film, a second region made of the first conductive film, the second conductive film, and the third conductive film; and etching the first region of the stacked body Forming the first IDT electrode, and forming the second IDT electrode by etching the second region of the stacked body.

また、本発明に係る他の弾性表面波装置の製造方法は、圧電基板上に、第１のＩＤＴ電極及び第２のＩＤＴ電極を備えた弾性表面波装置を製造する方法であって、前記圧電基板上に、第１導電膜、第２導電膜及び第３導電膜を順次積層した積層体を形成する工程と、前記第２導電膜及び前記第３導電膜を選択的にエッチングし、前記積層体に、前記第1導電膜からなる第1領域と、前記第1導電膜、前記第２導電膜及び前記第３導電膜からなる第２領域とを形成する工程と、前記積層体の前記第１領域をエッチングすることにより前記第１のＩＤＴ電極を形成する工程と、前記積層体の前記第２領域をエッチングすることにより前記第２のＩＤＴ電極を形成する工程と、を備えることを特徴とする。   Another method of manufacturing a surface acoustic wave device according to the present invention is a method of manufacturing a surface acoustic wave device including a first IDT electrode and a second IDT electrode on a piezoelectric substrate, the piezoelectric Forming a stacked body in which a first conductive film, a second conductive film, and a third conductive film are sequentially stacked on a substrate; selectively etching the second conductive film and the third conductive film; Forming a first region made of the first conductive film and a second region made of the first conductive film, the second conductive film, and the third conductive film on the body; A step of forming the first IDT electrode by etching one region, and a step of forming the second IDT electrode by etching the second region of the laminate. To do.

上記いずれかの弾性表面波装置の製造方法において、前記第２の導電膜がＴｉからなり、前記第１導電膜及び前記第３導電膜が前記第２導電膜とは異なる材料で構成されていることが好ましい。   In any one of the surface acoustic wave device manufacturing methods, the second conductive film is made of Ti, and the first conductive film and the third conductive film are made of a material different from that of the second conductive film. It is preferable.

また、前記第１の導電膜及び前記第３の導電膜が、Ａｌ、Ａｌ合金、Ａｇ、Ａｇ合金、Ｃｕ及びＣｕ合金のうちの一つからなることが好ましい。   The first conductive film and the third conductive film are preferably made of one of Al, Al alloy, Ag, Ag alloy, Cu, and Cu alloy.

本発明によれば、異なる複数の周波数特性を有すると共に、ＩＤＴ電極のメカニカルマイグレーションを抑制した弾性表面波装置及びその製造方法を提供することができる。   According to the present invention, it is possible to provide a surface acoustic wave device having a plurality of different frequency characteristics and suppressing mechanical migration of an IDT electrode, and a method for manufacturing the same.

以下、本発明に係る弾性表面波装置の一実施形態について、図面を参照しつつ説明する。   Hereinafter, an embodiment of a surface acoustic wave device according to the present invention will be described with reference to the drawings.

図１は、本実施形態に係る弾性表面波装置の平面図である。図２は、図１の弾性表面波装置のII−II線断面図である。図３は、図１の弾性表面波装置のIII−III線断面図である。図４は、図１の弾性表面波装置のIV−IV線断面図である。   FIG. 1 is a plan view of the surface acoustic wave device according to the present embodiment. 2 is a cross-sectional view of the surface acoustic wave device of FIG. 1 taken along the line II-II. 3 is a cross-sectional view taken along the line III-III of the surface acoustic wave device of FIG. 4 is a cross-sectional view of the surface acoustic wave device of FIG. 1 taken along line IV-IV.

図１〜図４に示すように、本実施形態に係る弾性表面波装置１は、弾性表面波素子３と、この弾性表面波素子３を接合するベース基板５とを備えている。なお、図１では、説明の便宜のため、ベース基板５及び後述する半田バンプ２５の図示を省略している。   As shown in FIGS. 1 to 4, the surface acoustic wave device 1 according to the present embodiment includes a surface acoustic wave element 3 and a base substrate 5 to which the surface acoustic wave element 3 is joined. In FIG. 1, the base substrate 5 and solder bumps 25 to be described later are not shown for convenience of explanation.

弾性表面波素子３は、例えば弾性表面波フィルタや弾性表面波共振子等であり、圧電基板７と、圧電基板７上に形成された第１のＩＤＴ電極９、第１の電極端子１１、第２のＩＤＴ電極１３、第２の電極端子１５及び枠体１７とを備えている。圧電基板７は、タンタル酸リチウム単結晶、ニオブ酸リチウム単結晶、四ホウ酸リチウム単結晶等の圧電材料で形成されている。   The surface acoustic wave element 3 is, for example, a surface acoustic wave filter, a surface acoustic wave resonator, or the like, and includes a piezoelectric substrate 7, a first IDT electrode 9 formed on the piezoelectric substrate 7, a first electrode terminal 11, 2 IDT electrodes 13, a second electrode terminal 15, and a frame body 17. The piezoelectric substrate 7 is made of a piezoelectric material such as a lithium tantalate single crystal, a lithium niobate single crystal, or a lithium tetraborate single crystal.

第１のＩＤＴ電極９は、図１の矢印Ｙ方向に２個並べて配置されている。各第１のＩＤＴ電極９は、櫛歯状に形成された２つの電極（以下、第１の櫛歯状電極という）１９，１９によって構成されている。各第１の櫛歯状電極１９，１９は、互いに対向し、電極指１９ａ，１９ａが互いに噛み合うように配置されている。   Two first IDT electrodes 9 are arranged side by side in the direction of arrow Y in FIG. Each first IDT electrode 9 is composed of two electrodes (hereinafter referred to as first comb-shaped electrodes) 19 and 19 formed in a comb-tooth shape. The first comb-shaped electrodes 19 and 19 are arranged so as to face each other and the electrode fingers 19a and 19a mesh with each other.

第１の電極端子１１は、第１のＩＤＴ電極９の基端部１９ｂに連続しており、図２に示すように、後述するベース基板５に設けられた素子接続用電極２１に接続されるようになっている。   The first electrode terminal 11 is continuous with the base end portion 19b of the first IDT electrode 9, and is connected to an element connection electrode 21 provided on the base substrate 5 described later, as shown in FIG. It is like that.

第２のＩＤＴ電極１３は、第１のＩＤＴ電極９と同様に、図１の矢印Ｙ方向に２個並べて配置されている。各第２のＩＤＴ電極１３は、櫛歯状に形成された２つの電極（以下、第２の櫛歯状電極という）２３，２３によって構成されている。各第２の櫛歯状電極２３，２３は、互いに対向し、電極指２３ａ，２３ａが互いに噛み合うように配置されている。   As with the first IDT electrode 9, two second IDT electrodes 13 are arranged side by side in the arrow Y direction in FIG. Each second IDT electrode 13 is composed of two electrodes 23 and 23 (hereinafter referred to as second comb-shaped electrodes) formed in a comb-like shape. The second comb-like electrodes 23 and 23 are arranged so as to face each other and the electrode fingers 23a and 23a mesh with each other.

第２の電極端子１５は、第２のＩＤＴ電極１３の基端部２３ｂに連続しており、図２に示すように、後述するベース基板５に設けられた素子接続用電極２１に接続されるようになっている。   The second electrode terminal 15 is continuous with the base end portion 23b of the second IDT electrode 13, and is connected to an element connection electrode 21 provided on the base substrate 5 described later, as shown in FIG. It is like that.

図２に示すように、枠体１７は、第１のＩＤＴ電極９及び第２のＩＤＴ電極１３を一括して取り囲むように、圧電基板７の周縁部に沿って設けられている。   As shown in FIG. 2, the frame body 17 is provided along the peripheral edge of the piezoelectric substrate 7 so as to surround the first IDT electrode 9 and the second IDT electrode 13 together.

ベース基板５は、セラミックやガラスセラミックなどの絶縁性材料で形成されており、図２〜図４に示すように、半田バンプ２５によってその周縁部が枠体１７の上面に接合されている。こうすることで、弾性表面波素子は、枠体１７とベース基板５とによって封止されている。   The base substrate 5 is made of an insulating material such as ceramic or glass ceramic, and its peripheral portion is bonded to the upper surface of the frame body 17 by solder bumps 25 as shown in FIGS. By doing so, the surface acoustic wave element is sealed by the frame body 17 and the base substrate 5.

図２に示すように、ベース基板５における第１の電極端子１１及び第２の電極端子１５に対応する位置には、ベース基板５を貫通する貫通孔５ａが形成されている。この貫通孔５ａには、素子接続用電極２１が設けられており、各素子接続用電極２１は、半田バンプ２５によって、対応する各電極端子１１，１５に接合されている。この構成により、ベース基板５に接合された弾性表面波素子３は、ベース基板５の素子接続用電極２１に接続される外部の駆動回路と電気的に接続可能となっている。   As shown in FIG. 2, a through hole 5 a penetrating the base substrate 5 is formed at a position corresponding to the first electrode terminal 11 and the second electrode terminal 15 in the base substrate 5. The through holes 5 a are provided with element connection electrodes 21, and each element connection electrode 21 is joined to the corresponding electrode terminals 11 and 15 by solder bumps 25. With this configuration, the surface acoustic wave element 3 bonded to the base substrate 5 can be electrically connected to an external drive circuit connected to the element connection electrode 21 of the base substrate 5.

次に、上記のように構成された第１のＩＤＴ電極９、第２のＩＤＴ電極１３、第１の電極端子１１、第２のＩＤＴ電極１３及び枠体１７の断面構成について、詳細に説明する。   Next, cross-sectional configurations of the first IDT electrode 9, the second IDT electrode 13, the first electrode terminal 11, the second IDT electrode 13, and the frame body 17 configured as described above will be described in detail. .

第１のＩＤＴ電極９は、図２及び図３に示すように、第１導電膜３１及び第２導電膜３２を積層した積層体（第２の積層体）で構成されている。そして、第２のＩＤＴ電極１３は、図２及び図４に示すように、第１導電膜３１、第２導電膜３２及び第３導電膜３３をこの順に積層した積層体（第１の積層体）で形成されている。こうすることで、第２のＩＤＴ電極１３の膜厚が、第１のＩＤＴ電極９の膜厚より大きくなり、第２のＩＤＴ電極１３が低周波側の周波数帯域に対応するフィルタ特性を有し、第１のＩＤＴ電極９が高周波側の周波数帯域に対応するフィルタ特性を有している。   As shown in FIGS. 2 and 3, the first IDT electrode 9 is configured by a stacked body (second stacked body) in which a first conductive film 31 and a second conductive film 32 are stacked. As shown in FIGS. 2 and 4, the second IDT electrode 13 is a stacked body in which a first conductive film 31, a second conductive film 32, and a third conductive film 33 are stacked in this order (first stacked body). ). By doing so, the film thickness of the second IDT electrode 13 is larger than the film thickness of the first IDT electrode 9, and the second IDT electrode 13 has a filter characteristic corresponding to the frequency band on the low frequency side. The first IDT electrode 9 has a filter characteristic corresponding to the frequency band on the high frequency side.

枠体１７は、図２〜図４に示すように、第１導電膜３１、第２導電膜３２、第３導電膜３３及び第４導電膜３４をこの順に積層して形成されている。こうすることで、枠体１７の高さが、第１のＩＤＴ電極９及び第２のＩＤＴ電極１３の高さより高くなり、第１のＩＤＴ電極９及び第２のＩＤＴ電極１３と、ベース基板５との間に空隙が確保される。   As shown in FIGS. 2 to 4, the frame 17 is formed by laminating a first conductive film 31, a second conductive film 32, a third conductive film 33, and a fourth conductive film 34 in this order. By doing so, the height of the frame 17 becomes higher than the height of the first IDT electrode 9 and the second IDT electrode 13, and the first IDT electrode 9 and the second IDT electrode 13, and the base substrate 5. A gap is secured between the two.

第１の電極端子１１及び第２の電極端子１５は、図２に示すように、枠体１７と同様、第１導電膜３１、第２導電膜３２、第３導電膜３３及び第４導電膜３４をこの順に積層して形成されている。こうすることで、第１の電極端子１１及び第２の電極端子１５の高さが、枠体１７の高さと同じになり、弾性表面波素子３をベース基板５に接合したときに、第１の電極端子１１及び第２の電極端子１５を、ベース基板５に設けられた素子接続用電極２１に接合することができる。   As shown in FIG. 2, the first electrode terminal 11 and the second electrode terminal 15 are similar to the frame body 17 in the first conductive film 31, the second conductive film 32, the third conductive film 33, and the fourth conductive film. 34 are laminated in this order. By doing so, the height of the first electrode terminal 11 and the second electrode terminal 15 becomes the same as the height of the frame body 17, and when the surface acoustic wave element 3 is joined to the base substrate 5, the first electrode terminal 11 and the second electrode terminal 15 have the same height. The electrode terminal 11 and the second electrode terminal 15 can be joined to the element connection electrode 21 provided on the base substrate 5.

なお、上記の第１導電膜３１、第２導電膜３２及び第３導電膜３３は、後述するように、互いに成膜のタイミングを異ならせて形成されている。   The first conductive film 31, the second conductive film 32, and the third conductive film 33 are formed at different film formation timings as will be described later.

さらに、第２の導電膜３２は、Ｔｉで形成されている。また、第１導電膜３１及び第３導電膜３３は、第２の導電膜３２とは異なる材料で構成されており、例えば、ＡｌやＡｌ合金（例えば、Ａｌ−Ｃｕ系、Ａｌ−Ｔｉ系）、ＣｕやＣｕ合金（例えば、Ｃｕ−Ｍｇ系、Ｃｕ−Ｔｉ系、Ｃｕ−Ｒｄ系）、ＡｇやＡｇ合金（例えば、Ａｇ−Ｍｇ系、Ａｇ−Ｔｉ系、Ａｇ−Ｒｄ系）等の金属膜で形成することができる。   Further, the second conductive film 32 is made of Ti. The first conductive film 31 and the third conductive film 33 are made of a material different from that of the second conductive film 32. For example, Al or Al alloy (for example, Al—Cu system, Al—Ti system) is used. , Cu and Cu alloys (for example, Cu-Mg, Cu-Ti, Cu-Rd), Ag and Ag alloys (for example, Ag-Mg, Ag-Ti, Ag-Rd), etc. Can be formed.

また、図示しないが、第１のＩＤＴ電極９及び第２のＩＤＴ電極１３の露出した表面上には、Ｓｉ，ＳｉＯ２，ＳｉＮｘ，Ａｌ２Ｏ３等の絶縁性の高い材料で形成された保護膜を設けてもよい。これによって、導電性の異物が第１のＩＤＴ電極９及び第２のＩＤＴ電極１３に付着することによる短絡を防止することができる。 Although not shown, the exposed surfaces of the first IDT electrode 9 and the second IDT electrode 13 are made of a highly insulating material such as Si, SiO 2 , SiN x , or Al 2 O 3 . A protective film may be provided. As a result, it is possible to prevent a short circuit due to the conductive foreign matter adhering to the first IDT electrode 9 and the second IDT electrode 13.

次に、以上のように構成された弾性表面波装置１の製造方法について、図５を参照しつつ説明する。なお、ここでは、第１導電膜３１及び第３導電膜３３を、Ａｌ、Ａｌ合金、Ｃｕ、Ｃｕ合金、Ａｇ及びＡｇ合金のうちのいずれかで形成した場合について説明する。   Next, a manufacturing method of the surface acoustic wave device 1 configured as described above will be described with reference to FIG. Here, a case where the first conductive film 31 and the third conductive film 33 are formed of any one of Al, Al alloy, Cu, Cu alloy, Ag, and Ag alloy will be described.

まず、圧電基板７を準備し、図５（ａ）に示すように、この圧電基板７上に、蒸着法、スパッタリング法、ＣＶＤ法等の結晶成長法を用いて、第１導電膜３１、第２導電膜３２及び第３導電膜３３を順次形成し、これらの導電膜で形成された積層体Ｌを形成する。   First, a piezoelectric substrate 7 is prepared. As shown in FIG. 5A, the first conductive film 31 and the first conductive film 31 are formed on the piezoelectric substrate 7 using a crystal growth method such as a vapor deposition method, a sputtering method, or a CVD method. A second conductive film 32 and a third conductive film 33 are sequentially formed, and a stacked body L formed of these conductive films is formed.

次に、図５（ｂ）に示すように、第３導電膜３３上にレジストＲ１を塗布し、フォトリソグラフィー法により所望のパターンを露光、現像した後、図５（ｃ）に示すように、ウェットエッチング法により第３導電膜３３を選択的にエッチングする。このとき、エッチング剤としては、第３導電膜３３より第２導電膜３２のエッチングレートが小さくなるものを使用することができ、例えば、テトラメチルアンモニウムハイドロオキサイドを含むアルカリ現像液（東京応化工業株式会社製，製品名：ＮＭＤ−Ｗ）を使用することで、第３導電膜３３のみを除去することができる。そして、図５（ｄ）に示すように、レジストＲ１を剥離する。こうすることで、積層体Ｌに、第１導電膜３１及び第２導電膜３２からなる第１領域Ｐ（第１の電極端子１１を構成する第３導電膜３３ａが形成された領域を除く）と、この第１の領域以外の第１導電膜３１、第２導電膜３２及び第３導電膜３３からなる第２領域Ｓとを形成する。なお、図１に、第１領域Ｐに対応する領域を破線で示す。   Next, as shown in FIG. 5B, a resist R1 is applied on the third conductive film 33, and a desired pattern is exposed and developed by a photolithography method. Then, as shown in FIG. The third conductive film 33 is selectively etched by wet etching. At this time, as the etching agent, one having an etching rate of the second conductive film 32 smaller than that of the third conductive film 33 can be used. For example, an alkali developer containing tetramethylammonium hydroxide (Tokyo Ohka Kogyo Co., Ltd.) By using company-made product name: NMD-W), only the third conductive film 33 can be removed. Then, as shown in FIG. 5D, the resist R1 is peeled off. By doing so, the first region P composed of the first conductive film 31 and the second conductive film 32 (excluding the region in which the third conductive film 33a constituting the first electrode terminal 11 is formed) is formed in the stacked body L. Then, the second region S including the first conductive film 31, the second conductive film 32, and the third conductive film 33 other than the first region is formed. In FIG. 1, a region corresponding to the first region P is indicated by a broken line.

続いて、図５（ｅ）に示すように、積層体Ｌ上にレジストＲ２を塗布し、フォトリソグラフィー法により所望のパターンを露光、現像した後、図５（ｆ）に示すように、ドライエッチング法により積層体Ｌの第１領域Ｐ及び第２領域Ｓをエッチングして、圧電基板７の一部を露出させる。このとき、エッチング剤としては、例えば、ＢＣｌ３，Ｃｌ２，Ｎ２の混合ガスを使用する。そして、図５（ｇ）に示すように、レジストＲ２を剥離する。こうして、第１のＩＤＴ電極９と第２のＩＤＴ電極１３とがそれぞれ形成される。 Subsequently, as shown in FIG. 5E, a resist R2 is applied on the laminate L, a desired pattern is exposed and developed by a photolithography method, and then dry etching is performed as shown in FIG. 5F. By etching the first region P and the second region S of the multilayer body L, a part of the piezoelectric substrate 7 is exposed. At this time, for example, a mixed gas of BCl 3 , Cl 2 , and N 2 is used as the etching agent. Then, as shown in FIG. 5G, the resist R2 is peeled off. Thus, the first IDT electrode 9 and the second IDT electrode 13 are formed.

次に、図６（ｈ）に示すように、積層体Ｌ及び圧電基板７上にレジストＲ３を塗布し、フォトリソグラフィー法により所望のパターンを露光、現像した後、図６（ｉ）に示すように、スパッタリング法等により第４導電膜３４を形成する。そして、図６（ｊ）に示すように、レジストＲ３を剥離して、レジストＲ３上に形成された第４導電膜３４を除去する。こうすることで、第１導電膜３１、第２導電膜３２、第３導電膜３３及び第４導電膜３４からなる積層体でそれぞれ構成された第１の電極端子１１、第２の電極端子１５及び枠体１７が形成される。   Next, as shown in FIG. 6 (h), a resist R3 is applied on the laminate L and the piezoelectric substrate 7, and a desired pattern is exposed and developed by a photolithography method, as shown in FIG. 6 (i). Then, the fourth conductive film 34 is formed by a sputtering method or the like. Then, as shown in FIG. 6J, the resist R3 is removed, and the fourth conductive film 34 formed on the resist R3 is removed. By doing so, the first electrode terminal 11 and the second electrode terminal 15 each composed of a laminate composed of the first conductive film 31, the second conductive film 32, the third conductive film 33, and the fourth conductive film 34 are provided. And the frame 17 is formed.

以上のようにして、本実施形態に係る弾性表面波素子３が製造される。   As described above, the surface acoustic wave device 3 according to this embodiment is manufactured.

そして、図２に示すように、弾性表面波素子３をベース基板５に対向させて配置し、半田バンプ２５によって、ベース基板５の周縁部と枠体１７とを接合するとともに、ベース基板５に設けられた素子接続用電極２１と、第１の電極端子１１及び第２の電極端子１５とを接合する。こうして、本実施形態に係る弾性表面波装置１が製造される。   Then, as shown in FIG. 2, the surface acoustic wave element 3 is disposed so as to face the base substrate 5, and the peripheral portion of the base substrate 5 and the frame body 17 are joined by the solder bumps 25. The provided element connection electrode 21 is joined to the first electrode terminal 11 and the second electrode terminal 15. Thus, the surface acoustic wave device 1 according to this embodiment is manufactured.

以上のように構成された弾性表面波装置１によれば、第１のＩＤＴ電極９が第１導電膜３１及び第２導電膜３２によって形成され、第２のＩＤＴ電極１３が第１導電膜３１、第２導電膜３２及び第３導電膜３３によって形成されている。そのため、第２のＩＤＴ電極１３の膜厚が第１のＩＤＴ電極９の膜厚より大きくなっており、第１のＩＤＴ電極９の膜厚と第２のＩＤＴ電極１３の膜厚とが異なるため、異なる２つの周波数帯の周波数信号を抽出する２つのフィルタ部を形成することができる。   According to the surface acoustic wave device 1 configured as described above, the first IDT electrode 9 is formed of the first conductive film 31 and the second conductive film 32, and the second IDT electrode 13 is the first conductive film 31. The second conductive film 32 and the third conductive film 33 are formed. Therefore, the film thickness of the second IDT electrode 13 is larger than the film thickness of the first IDT electrode 9, and the film thickness of the first IDT electrode 9 and the film thickness of the second IDT electrode 13 are different. Two filter sections for extracting frequency signals in two different frequency bands can be formed.

また、上記弾性表面波装置１では、第１のＩＤＴ電極９を構成する第１導電膜３１上、並びに、第２のＩＤＴ電極１３を構成する第１導電膜３１と第３導電膜３３との間に、第２導電膜３２が形成されており、第２導電膜３２に機械的強度が高いＴｉを採用している。そのため、第１のＩＤＴ電極９及び第２のＩＤＴ電極１３の機械的強度を高めることができる。第１のＩＤＴ電極９及び第２のＩＤＴ電極１３は圧電基板７を励振するためのものであり、振動による衝撃が大きい部分であるので、このように機械的強度を高めることで、第１のＩＤＴ電極９及び第２のＩＤＴ電極１３のメカニカルマイグレーションを抑制し、電極の短絡や断線等の発生を防止することができる。また、Ｔｉは比較的電気抵抗が小さいため、弾性表面波装置１の挿入損失の低下は小さい。   Further, in the surface acoustic wave device 1, the first conductive film 31 constituting the first IDT electrode 9 and the first conductive film 31 and the third conductive film 33 constituting the second IDT electrode 13 are provided. A second conductive film 32 is formed therebetween, and Ti having high mechanical strength is adopted for the second conductive film 32. Therefore, the mechanical strength of the first IDT electrode 9 and the second IDT electrode 13 can be increased. The first IDT electrode 9 and the second IDT electrode 13 are for exciting the piezoelectric substrate 7 and are portions where the impact due to vibration is large. Thus, by increasing the mechanical strength, the first IDT electrode 9 and the second IDT electrode 13 Mechanical migration of the IDT electrode 9 and the second IDT electrode 13 can be suppressed, and the occurrence of short-circuiting or disconnection of the electrodes can be prevented. Further, since Ti has a relatively small electric resistance, the decrease in insertion loss of the surface acoustic wave device 1 is small.

また、本実施形態によれば、枠体１７が、第１のＩＤＴ電極９及び第２のＩＤＴ電極１３を形成する第１導電膜３１、第２導電膜３２及び第３導電膜３３からなる積層体上に、第４導電膜３４を積層することで形成されている。そのため、例えば上記のように結晶成長法によって各導電膜３１，３２，３３を形成する場合には、第１のＩＤＴ電極９及び第２のＩＤＴ電極１３の圧電基板７上への形成と同時に、枠体１７の一部を形成することができる。枠体１７は第２のＩＤＴ電極１３の膜厚より大きく形成する必要があるため、このように枠体１７の一部を同時に形成することで、別個に形成する場合に比べて製造時間を短縮することができる。   In addition, according to the present embodiment, the frame body 17 includes the first conductive film 31, the second conductive film 32, and the third conductive film 33 that form the first IDT electrode 9 and the second IDT electrode 13. It is formed by laminating a fourth conductive film 34 on the body. Therefore, for example, when the conductive films 31, 32, 33 are formed by the crystal growth method as described above, simultaneously with the formation of the first IDT electrode 9 and the second IDT electrode 13 on the piezoelectric substrate 7, A part of the frame 17 can be formed. Since the frame body 17 needs to be formed larger than the film thickness of the second IDT electrode 13, the manufacturing time can be shortened by forming a part of the frame body 17 at the same time as compared with the case where the frame body 17 is formed separately. can do.

また、本実施形態では、１つの枠体１７によって、第１のＩＤＴ電極９と第２のＩＤＴ電極１３とを一括して包囲しているため、弾性表面波装置の小型化を図ることができる。   In the present embodiment, since the first IDT electrode 9 and the second IDT electrode 13 are collectively surrounded by one frame 17, the surface acoustic wave device can be downsized. .

また、本実施形態によれば、第１の電極端子１１が、第１導電膜３１及び第２導電膜３２だけではなく、第３導電膜３３を含む積層体で形成されているため、第１の電極端子１１の膜厚が厚くなっている。そのため、第１の電極端子１１と素子接続用電極２１との接続抵抗が小さくなり、弾性表面波装置１の挿入損失が低減される。また、このように第１の電極端子１１の膜厚が厚くなると、半田バンプによる半田食われに起因する第１のＩＤＴ電極９と第１の電極端子１１との断線を防止することができる。   In addition, according to the present embodiment, the first electrode terminal 11 is formed of a stacked body including not only the first conductive film 31 and the second conductive film 32 but also the third conductive film 33, so that the first The electrode terminal 11 has a large film thickness. Therefore, the connection resistance between the first electrode terminal 11 and the element connection electrode 21 is reduced, and the insertion loss of the surface acoustic wave device 1 is reduced. Further, when the film thickness of the first electrode terminal 11 is increased as described above, it is possible to prevent disconnection between the first IDT electrode 9 and the first electrode terminal 11 due to solder erosion caused by the solder bump.

また、本実施形態に係る弾性表面波装置１の製造方法によれば、第３導電膜３１を選択的にエッチングすることによって第１のＩＤＴ電極９を形成している。そのため、第１のＩＤＴ９の膜厚を第３導電膜３３の膜厚に依存することなく、第１導電膜３１及び第２導電膜３２の膜厚のみによって設定することができるので、第１のＩＤＴ電極９の膜厚の再現性を高くすることができる。   Further, according to the method for manufacturing the surface acoustic wave device 1 according to the present embodiment, the first IDT electrode 9 is formed by selectively etching the third conductive film 31. Therefore, the thickness of the first IDT 9 can be set only by the thickness of the first conductive film 31 and the second conductive film 32 without depending on the thickness of the third conductive film 33, so that the first The reproducibility of the film thickness of the IDT electrode 9 can be increased.

また、本実施形態に係る製造方法によれば、図５（ｄ）に示すように第１のＩＤＴ電極９及び第２のＩＤＴ電極１３に膜厚の差をつけた後に、図５（ｇ）に示すように各電極のパターニングを行っているため、次のような利点がある。つまり、先に各電極のパターニングを行った後に、各電極の膜厚の差をつけるようにした場合は、エッチングされる上層部分のみではなく、下層部分も露出することになる。そのため、例えば、ウェットエッチングでエッチングした場合には、エッチングの必要のない下層部分もエッチングされ、所望の寸法精度でＩＤＴ電極を形成することが困難となる。これに対し、本実施形態では、先に膜厚の差をつけてから、各電極をパターニングしているので、エッチングの必要のない層が露出することがなく、ＩＤＴ電極を精度良く形成することができる。   Further, according to the manufacturing method according to the present embodiment, as shown in FIG. 5D, after the difference in film thickness is given to the first IDT electrode 9 and the second IDT electrode 13, the process shown in FIG. Since each electrode is patterned as shown in FIG. 4, there are the following advantages. In other words, when the difference in film thickness of each electrode is made after the patterning of each electrode first, not only the upper layer portion to be etched but also the lower layer portion is exposed. Therefore, for example, when etching is performed by wet etching, a lower layer portion that does not need to be etched is also etched, making it difficult to form an IDT electrode with a desired dimensional accuracy. On the other hand, in this embodiment, since each electrode is patterned after the difference in film thickness is made first, the layer that does not need to be etched is not exposed, and the IDT electrode is formed with high accuracy. Can do.

以上、本発明の一実施形態について説明したが、本発明は上記実施形態に限定されるものではなく、その趣旨を逸脱しない限りにおいて種々の変更が可能である。例えば、上記実施形態では、第１のＩＤＴ電極９を第１導電膜３１及び第２導電膜３２によって形成しているが、第１導電膜３１のみで形成してもよい。この場合、例えば、図５（ｄ）に示される製造工程に続いて、フォトリソグラフィー法を適用し、第２導電膜３２をさらにウェットエッチング法により選択的にエッチングする。このとき、エッチング剤としては、第２導電膜３２より第１導電膜３１のエッチングレートが小さくなるものを使用することができ、例えば、過酸化水素にアンモニア水を混合した混合液（好ましくは、ｐＨ値が８となるように調整したもの）を使用することで、第２導電膜３２のみを除去することができる。   As mentioned above, although one Embodiment of this invention was described, this invention is not limited to the said embodiment, A various change is possible unless it deviates from the meaning. For example, in the above embodiment, the first IDT electrode 9 is formed by the first conductive film 31 and the second conductive film 32, but may be formed by only the first conductive film 31. In this case, for example, following the manufacturing process shown in FIG. 5D, a photolithography method is applied, and the second conductive film 32 is further selectively etched by a wet etching method. At this time, as the etching agent, one having an etching rate of the first conductive film 31 smaller than that of the second conductive film 32 can be used. For example, a mixed liquid in which ammonia water is mixed with hydrogen peroxide (preferably, Only the second conductive film 32 can be removed by using the one adjusted to have a pH value of 8.

また、上記実施形態に係る製造方法では、図５（ｅ）〜（ｇ）に示す工程で、第１のＩＤＴ電極９と第２のＩＤＴ電極１３とを同時に形成しているが、これに限定されるものではなく、例えば、第１領域Ｐのエッチングと第２領域Ｓのエッチングとを個別に順次行うようにしてもよい。この場合、第１領域Ｐ又は第２領域Ｓのいずれか一方をレジストで完全にマスクし、他方をエッチングしてパターニングした後、続いて逆の工程を行うようにすればよい。   Further, in the manufacturing method according to the above embodiment, the first IDT electrode 9 and the second IDT electrode 13 are formed at the same time in the steps shown in FIGS. For example, the first region P and the second region S may be separately and sequentially etched. In this case, either the first region P or the second region S may be completely masked with a resist, the other may be etched and patterned, and then the reverse process may be performed.

また、上記実施形態では、異なる２つの周波数特性を有するように、膜厚の異なる第１のＩＤＴ電極９と第２のＩＤＴ電極１３とを１つの圧電基板７上に形成しているが、これに限定されるものではなく、３つ以上の周波数特性を有するように、膜厚の異なる３つ以上のＩＤＴ電極を１つの圧電基板上に形成するようにしてもよい。この場合、例えば、第１導電膜３１、第２導電膜３２及び第３導電膜３３に加え、ＩＤＴ電極を構成する層としてさらに、エッチングストッパー層となる層を含む複数の導電膜層を対応する周波数帯の数に合わせて設ければよい。   In the above embodiment, the first IDT electrode 9 and the second IDT electrode 13 having different film thicknesses are formed on one piezoelectric substrate 7 so as to have two different frequency characteristics. The present invention is not limited to this, and three or more IDT electrodes having different film thicknesses may be formed on one piezoelectric substrate so as to have three or more frequency characteristics. In this case, for example, in addition to the first conductive film 31, the second conductive film 32, and the third conductive film 33, a plurality of conductive film layers including a layer serving as an etching stopper layer are further supported as a layer constituting the IDT electrode. What is necessary is just to provide according to the number of frequency bands.

また、上記実施形態では、第１の電極端子１１、第２の電極端子１５及び枠体１７の高さが、第２のＩＤＴ電極１３より高く、第２のＩＤＴ電極１３が第１のＩＤＴ電極９の高さより高くなるように構成されているが、このような関係で構成されている限り、第１のＩＤＴ電極９、第１の電極端子１１、第２のＩＤＴ電極１３、第２の電極端子１５及び枠体１７は、これらを構成する上記例示した導電膜層の他に、１層以上の導電膜を含んでいてもよい。   Moreover, in the said embodiment, the height of the 1st electrode terminal 11, the 2nd electrode terminal 15, and the frame 17 is higher than the 2nd IDT electrode 13, and the 2nd IDT electrode 13 is the 1st IDT electrode. The first IDT electrode 9, the first electrode terminal 11, the second IDT electrode 13, and the second electrode are configured so as to be higher than the height 9. The terminal 15 and the frame 17 may include one or more conductive films in addition to the conductive film layers exemplified above.

また、上記実施形態において、第１の電極端子１１、第２の電極端子１５及び枠体１７は、第４導電膜３４を含む少なくとも１層からなるアンダーバンプメタル層を備えてもよい。このアンダーバンプメタル層は、例えば、図２に示す第４導電膜３４と半田バンプ２５との間に、図示しない第５導電膜及び第６導電膜を第４導電膜３４側からこの順に積層し、第４導電膜３４、第５導電膜及び第６導電膜からなる積層体によって構成する。このとき、例えば、第４導電膜３４をＣｒ，Ｎｉ，Ｔｉ等で、第５導電膜をＮｉ，Ｗ，Ｔａ，Ｒｕ，Ｐｔ，Ｔｉ，Ｐｄ等で、第６導電膜をＡｕ等で形成する。なお、このアンダーバンプメタル層は、３層以外の複数層や単一層で構成してもよく、この場合、半田バンプに対するバリア層となるＮｉ，Ｗ，Ｔａ，Ｒｕ，Ｐｔ，Ｔｉ，Ｐｄ等からなる層を含むように構成すればよい。   In the above embodiment, the first electrode terminal 11, the second electrode terminal 15, and the frame body 17 may include an under bump metal layer including at least one layer including the fourth conductive film 34. For example, a fifth conductive film and a sixth conductive film (not shown) are laminated in this order from the fourth conductive film 34 side between the fourth conductive film 34 and the solder bump 25 shown in FIG. , The fourth conductive film 34, the fifth conductive film, and the sixth conductive film. At this time, for example, the fourth conductive film 34 is formed of Cr, Ni, Ti or the like, the fifth conductive film is formed of Ni, W, Ta, Ru, Pt, Ti, Pd, or the like, and the sixth conductive film is formed of Au or the like. . The under bump metal layer may be composed of a plurality of layers other than three layers or a single layer. In this case, Ni, W, Ta, Ru, Pt, Ti, Pd, or the like serving as a barrier layer against the solder bumps. What is necessary is just to comprise so that the layer which becomes may be included.

本発明の一実施形態に係る弾性表面波装置の平面図である。1 is a plan view of a surface acoustic wave device according to an embodiment of the present invention. 図１の弾性表面波装置のII−II線断面図である。It is the II-II sectional view taken on the surface acoustic wave apparatus of FIG. 図１の弾性表面波装置のIII−III線断面図である。FIG. 3 is a cross-sectional view of the surface acoustic wave device of FIG. 1 taken along the line III-III. 図１の弾性表面波装置のIV−IV線断面図である。FIG. 4 is a cross-sectional view of the surface acoustic wave device of FIG. 1 taken along the line IV-IV. 図１の弾性表面波装置の製造方法を説明する図である。It is a figure explaining the manufacturing method of the surface acoustic wave apparatus of FIG. 図１の弾性表面波装置の製造方法を説明する図である。It is a figure explaining the manufacturing method of the surface acoustic wave apparatus of FIG.

符号の説明Explanation of symbols

１ 弾性表面波装置
３ 弾性表面波素子
５ ベース基板
７ 圧電基板
９ 第１のＩＤＴ電極
１１ 第１の電極端子
１３ 第２のＩＤＴ電極
１５ 第２の電極端子
１７ 枠体
２５ 半田バンプ
３１ 第１導電膜
３２ 第２導電膜
３３ 第３導電膜
３４ 第４導電膜
DESCRIPTION OF SYMBOLS 1 Surface acoustic wave apparatus 3 Surface acoustic wave element 5 Base substrate 7 Piezoelectric substrate 9 1st IDT electrode 11 1st electrode terminal 13 2nd IDT electrode 15 2nd electrode terminal 17 Frame 25 Solder bump 31 1st electroconductivity Film 32 Second conductive film 33 Third conductive film 34 Fourth conductive film

Claims (3)

圧電基板上に、第１導電膜を有する第１のＩＤＴ電極と、前記第１導電膜、第２導電膜及び第３導電膜を順次積層した積層体を有する第２のＩＤＴ電極と、前記第１のＩＤＴ電極及び前記第２のＩＤＴ電極を一括して取り囲む枠体と、を備えた弾性表面波装置を製造する方法であって、
前記圧電基板上に、前記第１導電膜、前記第２導電膜及び前記第３導電膜を順次積層した前記積層体を形成する工程と、
前記第３導電膜を選択的にエッチングし、前記積層体に、前記第１導電膜及び前記第２導電膜からなる第１領域と、前記第１導電膜、前記第２導電膜及び前記第３導電膜からなる第２領域とを形成する工程と、
前記積層体の前記第１領域を、前記第２導電膜よりも前記第１導電膜に対するエッチングレートが小さいエッチング剤を用いて前記第２導電膜を選択的にエッチングすることにより、前記第１のＩＤＴ電極を形成する工程と、
前記積層体の前記第２領域をエッチングすることにより前記第２のＩＤＴ電極を形成する工程と、
前記積層体の前記第２領域のうち、前記第１のＩＤＴ電極及び前記第２のＩＤＴ電極を一括して取り囲む部分に枠状の第４導電膜を積層することにより前記枠体を形成する工程と、
を備える、弾性表面波装置の製造方法。 A first IDT electrode having a first conductive film on a piezoelectric substrate; a second IDT electrode having a laminate in which the first conductive film, the second conductive film, and the third conductive film are sequentially stacked; A surface acoustic wave device comprising: 1 IDT electrode and a frame that collectively surrounds the second IDT electrode,
Forming the stacked body in which the first conductive film, the second conductive film, and the third conductive film are sequentially stacked on the piezoelectric substrate;
The third conductive film is selectively etched, and the stacked body includes a first region including the first conductive film and the second conductive film, the first conductive film, the second conductive film, and the third conductive film. Forming a second region made of a conductive film;
The first region of the stacked body is selectively etched with the second conductive film using an etchant having an etching rate with respect to the first conductive film lower than that of the second conductive film. Forming an IDT electrode;
Forming the second IDT electrode by etching the second region of the stack;
A step of forming the frame by laminating a frame-like fourth conductive film on a portion surrounding the first IDT electrode and the second IDT electrode in the second region of the laminate. When,
A method for manufacturing a surface acoustic wave device. 前記第２導電膜がＴｉからなり、前記第１導電膜及び前記第３導電膜が前記第２導電膜とは異なる材料で構成されている、請求項１に記載の弾性表面波装置の製造方法。 The method for manufacturing a surface acoustic wave device according to claim 1 , wherein the second conductive film is made of Ti, and the first conductive film and the third conductive film are made of a material different from that of the second conductive film. . 前記第１導電膜及び前記第３導電膜が、Ａｌ、Ａｌ合金、Ａｇ、Ａｇ合金、Ｃｕ及びＣｕ合金のうちの一つからなる、請求項１または２に記載の弾性表面波装置の製造方法。 The method for manufacturing a surface acoustic wave device according to claim 1 or 2 , wherein the first conductive film and the third conductive film are made of one of Al, Al alloy, Ag, Ag alloy, Cu, and Cu alloy. .
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