JP2007027367A5 - - Google Patents
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- Publication number
- JP2007027367A5 JP2007027367A5 JP2005206695A JP2005206695A JP2007027367A5 JP 2007027367 A5 JP2007027367 A5 JP 2007027367A5 JP 2005206695 A JP2005206695 A JP 2005206695A JP 2005206695 A JP2005206695 A JP 2005206695A JP 2007027367 A5 JP2007027367 A5 JP 2007027367A5
- Authority
- JP
- Japan
- Prior art keywords
- layer
- surface treatment
- composition
- forming
- treatment layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
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- 239000010410 layer Substances 0.000 claims 28
- 239000002335 surface treatment layer Substances 0.000 claims 20
- 238000000034 method Methods 0.000 claims 11
- 238000004519 manufacturing process Methods 0.000 claims 10
- 239000004065 semiconductor Substances 0.000 claims 10
- 239000002245 particle Substances 0.000 claims 8
- 238000010304 firing Methods 0.000 claims 6
- 239000000758 substrate Substances 0.000 claims 6
- 239000011941 photocatalyst Substances 0.000 claims 3
- 239000012044 organic layer Substances 0.000 claims 2
- 239000011347 resin Substances 0.000 claims 2
- 229920005989 resin Polymers 0.000 claims 2
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims 1
- 230000001678 irradiating effect Effects 0.000 claims 1
- 239000011368 organic material Substances 0.000 claims 1
- 229910000077 silane Inorganic materials 0.000 claims 1
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2005206695A JP4785447B2 (ja) | 2005-07-15 | 2005-07-15 | 半導体装置の作製方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2005206695A JP4785447B2 (ja) | 2005-07-15 | 2005-07-15 | 半導体装置の作製方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2007027367A JP2007027367A (ja) | 2007-02-01 |
| JP2007027367A5 true JP2007027367A5 (enExample) | 2008-07-10 |
| JP4785447B2 JP4785447B2 (ja) | 2011-10-05 |
Family
ID=37787754
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2005206695A Expired - Fee Related JP4785447B2 (ja) | 2005-07-15 | 2005-07-15 | 半導体装置の作製方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP4785447B2 (enExample) |
Families Citing this family (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8937013B2 (en) | 2006-10-17 | 2015-01-20 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing semiconductor |
| US7968382B2 (en) * | 2007-02-02 | 2011-06-28 | Semiconductor Energy Laboratory Co., Ltd. | Method of manufacturing semiconductor device |
| US7652335B2 (en) * | 2007-10-17 | 2010-01-26 | Toshiba America Electronics Components, Inc. | Reversely tapered contact structure compatible with dual stress liner process |
| FR2925222B1 (fr) * | 2007-12-17 | 2010-04-16 | Commissariat Energie Atomique | Procede de realisation d'une interconnexion electrique entre deux couches conductrices |
| KR101525803B1 (ko) | 2008-12-23 | 2015-06-10 | 삼성디스플레이 주식회사 | 액정표시장치의 제조방법 |
| US8841661B2 (en) * | 2009-02-25 | 2014-09-23 | Semiconductor Energy Laboratory Co., Ltd. | Staggered oxide semiconductor TFT semiconductor device and manufacturing method thereof |
| CN102822978B (zh) | 2010-03-12 | 2015-07-22 | 株式会社半导体能源研究所 | 半导体装置及其制造方法 |
| CN103180954B (zh) | 2010-10-11 | 2017-02-22 | 皇家飞利浦电子股份有限公司 | 多器件oled |
| WO2017026127A1 (ja) * | 2015-08-13 | 2017-02-16 | 出光興産株式会社 | 導体とその製造方法、及びそれを用いた積層回路及び積層配線部材 |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3457348B2 (ja) * | 1993-01-15 | 2003-10-14 | 株式会社東芝 | 半導体装置の製造方法 |
| JP4103830B2 (ja) * | 2003-05-16 | 2008-06-18 | セイコーエプソン株式会社 | パターンの形成方法及びパターン形成装置、デバイスの製造方法、アクティブマトリクス基板の製造方法 |
| JP4619060B2 (ja) * | 2003-08-15 | 2011-01-26 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| JP2005135975A (ja) * | 2003-10-28 | 2005-05-26 | Seiko Epson Corp | 電極の形成方法、並びに圧電体デバイス、強誘電体デバイス、及び電子機器 |
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2005
- 2005-07-15 JP JP2005206695A patent/JP4785447B2/ja not_active Expired - Fee Related