JP4785447B2 - 半導体装置の作製方法 - Google Patents

半導体装置の作製方法 Download PDF

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Publication number
JP4785447B2
JP4785447B2 JP2005206695A JP2005206695A JP4785447B2 JP 4785447 B2 JP4785447 B2 JP 4785447B2 JP 2005206695 A JP2005206695 A JP 2005206695A JP 2005206695 A JP2005206695 A JP 2005206695A JP 4785447 B2 JP4785447 B2 JP 4785447B2
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Japan
Prior art keywords
layer
conductive
region
film
resin
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JP2005206695A
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Japanese (ja)
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JP2007027367A5 (enExample
JP2007027367A (ja
Inventor
厳 藤井
将文 森末
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Priority to JP2005206695A priority Critical patent/JP4785447B2/ja
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Publication of JP2007027367A5 publication Critical patent/JP2007027367A5/ja
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P80/00—Climate change mitigation technologies for sector-wide applications
    • Y02P80/30—Reducing waste in manufacturing processes; Calculations of released waste quantities

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  • Liquid Crystal (AREA)
  • Electroluminescent Light Sources (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Thin Film Transistor (AREA)
JP2005206695A 2005-07-15 2005-07-15 半導体装置の作製方法 Expired - Fee Related JP4785447B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2005206695A JP4785447B2 (ja) 2005-07-15 2005-07-15 半導体装置の作製方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2005206695A JP4785447B2 (ja) 2005-07-15 2005-07-15 半導体装置の作製方法

Publications (3)

Publication Number Publication Date
JP2007027367A JP2007027367A (ja) 2007-02-01
JP2007027367A5 JP2007027367A5 (enExample) 2008-07-10
JP4785447B2 true JP4785447B2 (ja) 2011-10-05

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ID=37787754

Family Applications (1)

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JP2005206695A Expired - Fee Related JP4785447B2 (ja) 2005-07-15 2005-07-15 半導体装置の作製方法

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JP (1) JP4785447B2 (enExample)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8937013B2 (en) 2006-10-17 2015-01-20 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing semiconductor
US7968382B2 (en) * 2007-02-02 2011-06-28 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing semiconductor device
US7652335B2 (en) * 2007-10-17 2010-01-26 Toshiba America Electronics Components, Inc. Reversely tapered contact structure compatible with dual stress liner process
FR2925222B1 (fr) * 2007-12-17 2010-04-16 Commissariat Energie Atomique Procede de realisation d'une interconnexion electrique entre deux couches conductrices
KR101525803B1 (ko) 2008-12-23 2015-06-10 삼성디스플레이 주식회사 액정표시장치의 제조방법
US8841661B2 (en) * 2009-02-25 2014-09-23 Semiconductor Energy Laboratory Co., Ltd. Staggered oxide semiconductor TFT semiconductor device and manufacturing method thereof
CN102822978B (zh) 2010-03-12 2015-07-22 株式会社半导体能源研究所 半导体装置及其制造方法
CN103180954B (zh) 2010-10-11 2017-02-22 皇家飞利浦电子股份有限公司 多器件oled
WO2017026127A1 (ja) * 2015-08-13 2017-02-16 出光興産株式会社 導体とその製造方法、及びそれを用いた積層回路及び積層配線部材

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3457348B2 (ja) * 1993-01-15 2003-10-14 株式会社東芝 半導体装置の製造方法
JP4103830B2 (ja) * 2003-05-16 2008-06-18 セイコーエプソン株式会社 パターンの形成方法及びパターン形成装置、デバイスの製造方法、アクティブマトリクス基板の製造方法
JP4619060B2 (ja) * 2003-08-15 2011-01-26 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP2005135975A (ja) * 2003-10-28 2005-05-26 Seiko Epson Corp 電極の形成方法、並びに圧電体デバイス、強誘電体デバイス、及び電子機器

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JP2007027367A (ja) 2007-02-01

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