JP2007019400A5 - - Google Patents

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Publication number
JP2007019400A5
JP2007019400A5 JP2005201701A JP2005201701A JP2007019400A5 JP 2007019400 A5 JP2007019400 A5 JP 2007019400A5 JP 2005201701 A JP2005201701 A JP 2005201701A JP 2005201701 A JP2005201701 A JP 2005201701A JP 2007019400 A5 JP2007019400 A5 JP 2007019400A5
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JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2005201701A
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JP2007019400A (ja
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Application filed filed Critical
Priority to JP2005201701A priority Critical patent/JP2007019400A/ja
Priority claimed from JP2005201701A external-priority patent/JP2007019400A/ja
Publication of JP2007019400A publication Critical patent/JP2007019400A/ja
Publication of JP2007019400A5 publication Critical patent/JP2007019400A5/ja
Pending legal-status Critical Current

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JP2005201701A 2005-07-11 2005-07-11 Ｍｏｓ構造を有する半導体装置およびその製造方法 Pending JP2007019400A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2005201701A JP2007019400A (ja) 2005-07-11 2005-07-11 Ｍｏｓ構造を有する半導体装置およびその製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2005201701A JP2007019400A (ja) 2005-07-11 2005-07-11 Ｍｏｓ構造を有する半導体装置およびその製造方法

Publications (2)

Publication Number Publication Date
JP2007019400A JP2007019400A (ja) 2007-01-25
JP2007019400A5 true JP2007019400A5 (ja) 2008-07-31

Family

ID=37756262

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2005201701A Pending JP2007019400A (ja) 2005-07-11 2005-07-11 Ｍｏｓ構造を有する半導体装置およびその製造方法

Country Status (1)

Country Link
JP (1) JP2007019400A (ja)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5147588B2 (ja) 2008-08-04 2013-02-20 パナソニック株式会社 半導体装置

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06260483A (ja) * 1993-03-08 1994-09-16 Sony Corp 微細配線の形成方法及び微細トランジスタの製法
JPH0786602A (ja) * 1993-09-10 1995-03-31 Fujitsu Ltd 薄膜トランジスタの製造方法
FR2765394B1 (fr) * 1997-06-25 1999-09-24 France Telecom Procede d'obtention d'un transistor a grille en silicium-germanium
JPH11307766A (ja) * 1998-04-20 1999-11-05 Sony Corp 半導体装置およびその製造方法
JP3287403B2 (ja) * 1999-02-19 2002-06-04 日本電気株式会社 Ｍｉｓ型電界効果トランジスタ及びその製造方法
JP2000307010A (ja) * 1999-04-16 2000-11-02 Nec Corp 半導体集積回路装置およびその製造方法
JP2001077112A (ja) * 1999-07-07 2001-03-23 Matsushita Electric Ind Co Ltd 積層体，積層体の製造方法及び半導体素子
US6518106B2 (en) * 2001-05-26 2003-02-11 Motorola, Inc. Semiconductor device and a method therefor
JP2003023152A (ja) * 2001-07-10 2003-01-24 Sony Corp Ｍｉｓ型トランジスタ及びその製造方法
JP2003282875A (ja) * 2002-03-27 2003-10-03 Toshiba Corp 半導体装置及び半導体装置の製造方法
US6861712B2 (en) * 2003-01-15 2005-03-01 Sharp Laboratories Of America, Inc. MOSFET threshold voltage tuning with metal gate stack control
US7019351B2 (en) * 2003-03-12 2006-03-28 Micron Technology, Inc. Transistor devices, and methods of forming transistor devices and circuit devices
JP4091530B2 (ja) * 2003-07-25 2008-05-28 株式会社東芝 半導体装置の製造方法
BE1015723A4 (nl) * 2003-10-17 2005-07-05 Imec Inter Uni Micro Electr Werkwijze voor het vervaardigen van halfgeleiderinrichtingen met gesilicideerde elektroden.
JP4011014B2 (ja) * 2003-11-21 2007-11-21 株式会社ルネサステクノロジ 半導体装置およびその製造方法

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