JP2007019067A - Stage structure for surface treatment - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To achieve a structure in which a fluid path for controlling temperature in a base material such as a wafer W, and sucking the base material is arranged at a position displaced from from the center of a rotary stage 10, and to ensure an arrangement space for other component members on the central axis Lc. <P>SOLUTION: A rotary barrel 50 is rotatably inserted into a fixing barrel 60. A rotary drive means is connected to the lower end of the rotary barrel 50, and a stage body 11 is connected to the upper end. An annular cooling chamber 11a and a suction channel 11b are provided in the stage body 11 as a channel terminal. A fluid port 61a is formed on the outer-periphery surface of the fixing barrel 60, and an annular path 61c ranging with the port is formed on the inner-periphery surface. In the rotary barrel 50, an axial path 51a is formed, the lower end of an axial path ranges with the annular path, and the other end ranges with a fluid terminal. <P>COPYRIGHT: (C)2007,JPO&INPIT

Description

  The present invention relates to a stage structure for setting and rotating a base material such as a wafer or a liquid crystal display substrate.

  As means for coating an insulating film, an organic resist, polyimide, or the like on a substrate such as a semiconductor wafer or a glass substrate for liquid crystal display, methods such as coating by spin coating, thin film deposition by CVD, and PVD are known. According to these methods, the film is also applied to the outer peripheral part of the base material. However, the film on the outer peripheral part may have a different film quality from the central part, or may break during transportation and cause particles. There is.

Various techniques have been proposed to remove such unnecessary films on the outer periphery.
For example, in Patent Document 1; Japanese Patent Application Laid-Open No. 2003-264168, a wafer is placed on a stage, sucked and chucked, and a reactive gas composed of ozone and hydrofluoric acid is supplied from a gas supply nozzle while rotating the stage. The outer peripheral part of the wafer is heated by the heater while being sprayed on the outer peripheral part of the wafer, and unnecessary films on the outer peripheral part are removed.
JP 2003-264168 A

  The inventors have proposed that a cooling chamber is provided in the stage so that heating of the outer peripheral portion of the wafer does not affect the film to be left inside, and a cooling fluid such as water is supplied to the cooling chamber. did. Since it is effective that the cooling chamber is located immediately inside the outer peripheral portion of the wafer, the diameter of the stage is slightly smaller than the diameter of the wafer so that only the outer peripheral portion of the wafer protrudes outside the radius of the stage. Is preferable.

  On the other hand, it is preferable not to touch the front side surface of the wafer when the wafer is set on the stage or taken out of the stage. For this purpose, it is preferable to use a fork-shaped robot arm that is lifted against the lower surface (back surface) of the wafer. However, if only a small portion of the outer periphery of the wafer protrudes from the stage, there is no room for applying a fork to the lower surface of the wafer.

  Therefore, the inventors have further proposed that a small-diameter center pad is provided at the center of the stage so as to be movable up and down. With the center pad protruding upward from the stage, the wafer is placed on the center pad by a fork-shaped robot arm, and after the fork-shaped robot arm is retracted, the center pad is flush with the stage or from it. When lowered until retracted, the wafer can be placed on the stage. After the processing is completed, the center pad is raised and the fork-shaped robot arm is inserted between the wafer and the stage, whereby the wafer can be lifted and unloaded by the fork-shaped robot arm.

  In the stage with the center pad, the vertical movement mechanism of the center pad is arranged on the central axis. In addition, it is preferable to add a function of sucking the wafer to the center pad. In this case, a suction flow path from the center pad is also arranged on the center axis. Further, in a process that does not require cooling, it may be convenient to use the center pad as a stage as it is. In this case, a center pad rotation mechanism may be connected to the center axis.

  Then, it becomes difficult to arrange the suction flow path for adsorbing the wafer to the stage and the cooling flow path to the cooling chamber on the central axis, and it must be eccentric from the central axis. . On the other hand, since the stage rotates around the central axis, it becomes a problem how to connect the stage and the eccentric flow path.

  The present invention has been made in view of the above circumstances, and supplies or discharges a fluid for performing a required action such as temperature control such as cooling or adsorption from a position shifted from the center axis of the stage in the surface treatment apparatus. It is to realize a flow path configuration capable of rotating the stage while performing suction or suction, and to allow other components such as a center pad advance / retreat mechanism to be disposed on the center axis.

The present invention is a stage that has a flow path for exerting a desired (temperature control (including cooling), adsorption, etc.) action on a substrate such as a wafer to be surface-treated and is rotatable around a central axis. And
A stage body provided with an installation surface on which the base material is installed and a terminal of the flow path (a part for performing the required action such as temperature control and adsorption);
A fixed cylinder provided with a port of the flow path;
A rotating cylinder that is rotatably inserted into the fixed cylinder and is coaxially connected to the stage body;
Rotation driving means for rotating the rotating cylinder,
An annular path connected to the port is formed on the inner peripheral surface of the fixed cylinder or the outer peripheral surface of the rotating cylinder,
An axial path extending in the axial direction is formed in the rotating cylinder,
One end of the axial path is connected to the annular path, and the other end is connected to the terminal.
As a result, the stage can be rotated while circulating a fluid for exerting required actions such as temperature control and adsorption on a substrate such as a wafer at a position shifted from the center of the stage. It is possible to secure a space for arranging other components such as a center pad advance / retreat mechanism.

For example, a cooling fluid for cooling the base material is passed through the flow path, and the terminal is a base material cooling chamber or path provided inside the stage main body.
As a result, the substrate can be cooled as the required action.

In the cooling flow path configuration, annular seal grooves are formed on both sides of the annular path on the inner peripheral surface of the fixed cylinder or the outer peripheral surface of the rotary cylinder,
Each seal groove preferably accommodates a gasket having a U-shaped cross section that opens toward the annular path.
As a result, when the cooling fluid enters the annular seal groove via the clearance between the inner peripheral surface of the fixed cylinder and the outer peripheral surface of the rotary cylinder, the fluid pressure (positive pressure) is U-shaped in cross section. This works in the direction of expanding the opening of the gasket, and can press the gasket against the inner peripheral surface of the annular seal groove. As a result, the sealing pressure can be obtained with certainty, and the leakage of the cooling fluid can be reliably prevented.

For example, the terminal is a suction groove formed on the installation surface, and the port is evacuated.
As a result, the substrate can be adsorbed as the required action.

In the suction flow path configuration, annular seal grooves are formed on both sides of the annular path on the inner peripheral surface of the fixed cylinder or the outer peripheral surface of the rotary cylinder,
Preferably, each seal groove accommodates a gasket having a U-shaped cross section that opens toward the opposite side of the annular path.
As a result, when the negative pressure in the adsorption flow path reaches the annular seal groove via the clearance between the inner peripheral surface of the fixed cylinder and the outer peripheral surface of the rotary cylinder, the negative pressure is It acts on the back portion of the U-shaped gasket to expand the gasket, and as a result, the gasket is pressed against the inner peripheral surface of the annular seal groove, and leakage can be reliably prevented.

  For example, it is preferable that a center pad is disposed at the center of the stage body, and a pad shaft connected to the center pad is accommodated inside the rotating cylinder. The center pad is preferably advanced and retracted in the axial direction via the pad shaft. The center pad may be rotated via a pad shaft. The pad shaft preferably incorporates a part or all of a pad advance / retreat mechanism for advancing / retreating the center pad and a pad rotation mechanism for rotating the center pad. The center pad may be formed with a suction groove for sucking the base material, and the pad shaft may be provided with a suction path that continues to the suction groove of the center pad.

  According to the present invention, it is possible to rotate the stage while circulating a fluid for exerting a required action on a substrate such as a wafer at a position shifted from the center of the stage. A space for arranging other components such as an advance / retreat mechanism can be secured.

Hereinafter, an embodiment of the present invention will be described.
1 and 2 show a surface treatment apparatus according to this embodiment. The substrate to be processed of this surface treatment apparatus is, for example, a semiconductor wafer W. As indicated by an imaginary line in FIG. 1, the wafer W is disk-shaped. As shown in FIG. 5A, a film is formed on the upper surface (front side surface) of the wafer W. In this embodiment, two or more films having different film types are stacked. For example, a film f1 made of an inorganic material such as SiO ₂ or SiN is coated on the wafer W, and a film f2 made of an organic material such as a photoresist is coated thereon.

  The films f1 and f2 extend to the outer periphery of the wafer W. The films f1a and f2a on the outer periphery of the wafer W tend to cause particles during transportation. The surface treatment apparatus of the present embodiment removes the films f1a and f2a on the outer periphery of the wafer W as unnecessary materials.

  As shown in FIGS. 1 and 2, the surface treatment apparatus includes a stage 10 on which a wafer W is installed, an organic film processing head 20 disposed on one side of the stage 10, and an inorganic film disposed on the opposite side. And a processing head 30.

  The organic film processing head 20 has a processing position (solid line in FIGS. 1 and 2) on the outer periphery of the stage 10 and a retreat position (imaginary line in FIGS. 1 and 2) spaced radially outward therefrom. It is possible to move forward and backward. The organic film processing head 20 is provided with a blowing nozzle 21, a suction nozzle 22, and a laser irradiator 23. A supply source (not shown) of the reactive gas for organic film such as ozone is connected to the blowing nozzle 21. When the organic film processing head 20 is in the processing position, the blowout nozzle 21 is arranged so as to face one place (processing position) of the outer periphery of the wafer W substantially along the tangential direction of the outer periphery of the wafer W. . The suction nozzle 22 is arranged so as to be substantially along the tangential direction and to be directed to the processing position from the opposite side of the blowing nozzle 21. The laser irradiator 23 is arranged so as to be directed to the processing position from above between the blowing nozzle 21 and the suction nozzle 22, and is configured to converge and irradiate the laser toward the processing position. An infrared irradiator may be used instead of the laser irradiator 23.

  An inorganic film processing head 30 is disposed in the circumferential direction of the stage 10 at a distance of, for example, 180 degrees from the organic film processing head 20. The inorganic film processing head 30 has a processing position approaching the center pad 12 (imaginary line in FIGS. 1 and 2) and a retracted position away from the center pad 12 at a height corresponding to the protruding position of the center pad 12 (described later). It is possible to move forward and backward with respect to the solid line in FIG.

  As shown in FIG. 1, the inorganic film processing head 30 has a circular arc shape in plan view. As shown in FIG. 2, a notch is formed horizontally on the surface of the inorganic film processing head 30 facing the stage 10, and this notch serves as an insertion port 31 into which the wafer W is inserted. The rear end of the insertion port 31 is widened to form a guide path 32 having a circular cross section. The outer periphery of the wafer W is positioned inside the guide path 32. The cross-sectional shape of the guide path 32 is not limited to a circular shape, and may be a semicircular shape, a rectangular shape, or a size that can be appropriately set. The insertion port 31 and the guide path 32 extend in an arc shape in plan view over the entire length in the length direction of the inorganic film processing head 30.

  Although not shown, an atmospheric pressure plasma discharge device having a pair of electrodes is connected to one end of the guide path 32 in the extending direction, and an exhaust path is connected to the other end. In the plasma discharge apparatus, a gas corresponding to the component of the inorganic film f1 such as nitrogen, oxygen, fluorine or the like is converted into plasma in the atmospheric pressure plasma discharge space between the electrodes and introduced into the guide path 32.

  As shown in FIGS. 1 and 2, the stage 10 of the surface treatment apparatus includes a stage main body 11, a center pad 12, and shaft assemblies 13, 50 and 60.

  The stage main body 11 has a horizontal disk shape. The upper surface of the stage main body 11 constitutes an installation surface on which the wafer W is installed. The diameter of the stage body 11 is slightly smaller than the diameter of the wafer W. When the wafer W is placed on the stage body 11, the outer periphery of the wafer W is only a few mm from the outer periphery of the stage body 11 (for example, 3 ˜5 mm). An annular cooling chamber 11 a is formed inside the stage body 11. Water is stored in the annular cooling chamber 11a as a fluid for cooling the wafer W, and is appropriately circulated and circulated. The annular cooling chamber 11a constitutes a positive pressure fluid terminal that causes cold energy to act on the wafer W. The cooling fluid may be another liquid instead of water or a gas such as air.

  An adsorption groove 11 b is formed on the upper surface of the stage body 11. The suction groove 11b constitutes a negative pressure fluid terminal that applies a suction force to the wafer W.

  A recess 11c is formed at the center of the stage body 11, and the center pad 12 is accommodated in the recess 11c. The center pad 12 has a disk shape that is sufficiently smaller in diameter than the stage main body 11 and the wafer W, and is arranged on the stage main body 11 and the concentric axis Lc. Although not shown, a suction groove for sucking the wafer W is also provided on the upper surface of the center pad 12.

  As shown in FIG. 2, a shaft assembly that supports these is provided below the stage main body 11 and the center pad 12. The shaft assembly includes a center pad shaft 13, an outer rotating cylinder 50, and a stationary cylinder 60 on the outer side. As shown in FIGS. 2 and 4, the pad shaft 13, the rotary cylinder 50, and the fixed cylinder 60 are arranged concentrically around the same central axis Lc as the stage main body 11 and the center pad 12.

  The pad shaft 13 extends vertically along the central axis Lc. A center pad 12 is connected and fixed to the upper end portion of the pad shaft 13. The lower end portion of the pad shaft 13 is connected to the pad drive unit 14. Although not shown, a suction path extending from the suction groove on the upper surface of the center pad 12 is provided inside the pad shaft 13 and the pad drive unit 14, and a lower end port of the suction path is opened to the pad drive unit 14. A suction means including a vacuum pump or the like is connected to this port. By placing the wafer W on the upper surface of the center pad 12 and driving the suction means, the wafer W is chucked to the center pad 12. Further, the pad drive unit 14 is provided with a lift drive system that lifts and lowers the pad shaft 13. When the pad shaft 13 is moved up and down by the lifting drive system, the center pad 12 protrudes above the stage main body 11 (virtual line in FIG. 2), and the storage position (shown in FIG. It is designed to move up and down between the two lines. The upper surface of the center pad 12 at the storage position is slightly recessed (several mm) from the upper surface of the stage body 11. Further, the pad drive unit 14 is provided with a rotation drive system for rotating the pad shaft 13 and thus the center pad 12.

The pad shaft 13 is inserted into and supported by the rotary cylinder 50 so as to be movable up and down and rotatable.
The main part of the rotating cylinder 50 has a uniform cylindrical shape over the entire circumference, and extends vertically. The upper end of the rotating cylinder 50 is connected and fixed to the stage main body 11. A lower end portion of the rotary cylinder 50 is connected to a rotation drive motor 40 (rotation drive means) through a pulley 44, a timing belt 43, a pulley 42, and a transmission 41 in order. The rotary cylinder 50 is rotated by the rotation drive motor 40, and as a result, the stage main body 11 is rotated.

The rotating cylinder 50 is inserted and supported in the fixed cylinder 60 through a bearing B so as to be rotatable.
The fixed cylinder 60 has a vertical cylindrical shape and is fixed to the apparatus frame F. The fixed cylinder 60 only needs to have a circular cross section at least on the inner peripheral surface. The fixed cylinder 60 is lower than the rotating cylinder 50, and the upper end portion of the rotating cylinder 50 protrudes from the fixed cylinder 60, and the stage body 11 is disposed thereon.

  The rotating cylinder 50 and the fixed cylinder 60 are provided with a cooling channel having the annular cooling chamber 11a of the stage body 11 as a terminal and a suction channel having the suction groove 11b as a terminal.

The forward path of the cooling channel is configured as follows.
As shown in FIGS. 2, 3, and 4 (c), a cooling water port 61 a is formed on the outer peripheral surface of the fixed cylinder 60. A cooling forward pipe 81 extends from a cooling water supply source (not shown) and is connected to the port 61a. A communication path 61b extends from the port 61a toward the radially inner side of the fixed cylinder 60.
As shown in FIG. 4C, a groove-like annular path 61c is formed on the inner peripheral surface of the fixed cylinder 60 over the entire circumference. The connecting path 61b is connected to one place in the circumferential direction of the annular path 61c.

  As shown in FIGS. 2 and 3, annular seal grooves 61d are formed on the inner peripheral surfaces of the fixed cylinders 60 on both the upper and lower sides across the annular path 61c. As shown in FIG. 3, an annular cooling forward gasket 71 is accommodated in the annular seal groove 61d. The cross-sectional shape of the gasket 71 is U-shaped (C-shaped), and the opening is arranged so as to face the annular path 61c side. The outer peripheral surface of the gasket 71 is preferably lubricated.

  As shown in FIGS. 2 and 3, the rotary cylinder 50 is formed with an axial path 51 a that extends straight up and down. As shown in FIGS. 3 and 4C, the lower end portion of the axial path 51a is opened on the outer peripheral surface of the rotary cylinder 50 via the communication path 51b. The communication path 51b is located at the same height as the annular path 61c and communicates with the annular path 61c. Although the position of the circumferential direction changes according to rotation of the rotary cylinder 50, the communication path 51b always maintains a communication state with the annular path 61c over 360 degrees.

  As shown in FIG. 2, the upper end portion of the axial path 51a is connected to an external relay pipe 91P via a connector 91A on the outer peripheral surface of the rotary cylinder 50. The relay pipe 91P is connected to the annular cooling chamber 11a via a connector 91B on the lower surface of the stage body 11.

The return path of the cooling flow path is configured as follows.
As shown in FIG. 2, a connector 92 </ b> B is provided on the lower surface of the stage main body 11 on the side opposite to the forward path connector 91 </ b> B by 180 degrees. The annular cooling chamber 11a of the stage main body 11 is connected to an external relay pipe 92P through this connector 92B. The relay pipe 92P is connected to a connector 92A provided on the outer periphery of the upper portion of the rotary cylinder 50.

As shown in FIG. 2, the rotary cylinder 50 is formed with an axial path 52a that extends straight up and down. As shown in FIG. 4B, the axial path 52a is disposed 180 degrees opposite to the forward axial path 51a. The upper end portion of the axial path 52a is connected to the connector 92A.
As shown in FIGS. 2 and 4B, the lower end portion of the axial path 52a is opened on the outer peripheral surface of the rotary cylinder 50 via the communication path 52b. The communication path 52b is disposed 180 degrees opposite to the forward communication path 51b and above the communication path 51b. The communication path 52b rotates around the central axis Lc together with the axial path 52a according to the rotation of the rotary cylinder 50.

  A groove-shaped annular path 62 c is formed on the inner peripheral surface of the fixed cylinder 60 over the entire circumference. The annular path 62c is located above the forward annular path 61c and at the same height as the communication path 52b, and is connected to the communication path 52b at one place in the circumferential direction. The communication path 52b changes its position in the circumferential direction with the rotation of the rotary cylinder 50, but always maintains a communication state with the path 62c over 360 degrees.

  As shown in FIGS. 2 and 3, cooling return path annular seal grooves 62d are formed on the inner peripheral surfaces of the fixed cylinders 60 on both upper and lower sides across the annular path 62c. As shown in FIG. 3, an annular cooling return path gasket 72 is accommodated in the seal groove 62d. The cross-sectional shape of the gasket 72 is U-shaped (C-shaped), and the opening is arranged so as to face the annular path 62c side. The outer peripheral surface of the gasket 72 is preferably lubricated.

  As shown in FIGS. 2, 3, and 4B, the fixed cylinder 60 is formed with a communication path 62b extending radially outward from the annular path 62c, and a drain port 62a connected to the communication path 62b. The port 62 a is opened on the outer peripheral surface of the fixed cylinder 60. A cooling return pipe 82 extends from the port 62a. The connecting path 62b and the port 62a are disposed at the same circumferential position as the outgoing connecting path 61b and the port 61a and above them.

The suction channel is configured as follows. As shown in FIGS. 2, 3, and 4A, a suction port 63a is formed on the outer peripheral surface of the fixed cylinder 60 above the port 62a of the cooling return path. Is formed. A suction tube 83 extends from a suction source including a vacuum pump (not shown) and is connected to the port 63a. A communication path 63b extends from the port 63a toward the radially inner side of the fixed cylinder 60.
As shown in FIG. 4A, a groove-like suction annular path 63 c is formed on the inner peripheral surface of the fixed cylinder 60 over the entire circumference. A connecting path 63b is connected to one place in the circumferential direction of the annular path 63c.

  As shown in FIGS. 2 and 3, suction annular seal grooves 63 d are formed on the inner peripheral surfaces of the fixed cylinders 60 on both the upper and lower sides across the annular path 63 c. As shown in FIG. 3, an annular suction gasket 73 is accommodated in the seal groove 63d. The cross-sectional shape of the gasket 73 is U-shaped (C-shaped) like the gaskets 71 and 72 of the cooling reciprocating path, but the direction is different from that of the gaskets 71 and 72, and the opening is an annular path 63c. It is arrange | positioned so that it may face the other side. The outer peripheral surface of the gasket 73 is preferably lubricated.

As shown in FIG. 2, the rotary cylinder 50 is formed with a suction axial path 53 a that extends straight up and down. As shown in FIG. 4A, the lower end portion of the axial path 53a is opened on the outer peripheral surface of the rotary cylinder 50 via the communication path 53b. The communication path 53b is located at the same height as the annular path 63c and communicates with the suction annular path 63c. Although the position of the circumferential direction changes according to rotation of the rotary cylinder 50, the communication path 53b always maintains the communication state with the suction annular path 63c over 360 degrees.
The axial direction path 53a and the communication path 53b are disposed at positions that are shifted by 90 degrees in the circumferential direction with respect to the axial direction paths 51a and 52a and the communication paths 51b and 52b of the cooling reciprocating path.

  As shown in FIG. 2, the upper end portion of the axial path 53a is connected to an external relay pipe 93P via a connector 93A on the outer peripheral surface of the rotary cylinder 50. The relay pipe 93P is connected to the suction groove 11b via the connector 93B on the lower surface of the stage body 11.

An operation of removing the unnecessary films f1a and f2a on the outer periphery of the wafer W using the surface treatment apparatus having the above configuration will be described.
A wafer W to be processed is picked up from a cassette by a fork-shaped robot arm (not shown) and aligned (centered) by an alignment mechanism. The aligned wafer W is lifted horizontally by the fork-shaped robot arm and placed on the center pad 12 positioned at the protruding position (the imaginary line in FIG. 2). Since the center pad 12 is sufficiently smaller in diameter than the wafer W, a sufficient margin for the fork-shaped robot arm can be secured. After placing the wafer W on the center pad 12, the fork-shaped robot arm is retracted. Further, the suction mechanism for the center pad 12 is driven, and the wafer W is chucked to the center pad 12.

  Next, the center pad 12 is lowered by the lift drive system of the pad drive unit 14 until the upper surface is flush with the stage 10. As a result, the wafer W is brought into contact with the upper surface of the stage 10. Here, the suction of the center pad 12 is released, the center pad 12 is further lowered several millimeters to be positioned at the accommodation position (solid line in FIG. 2), and the suction pressure is reduced by driving a suction source such as a vacuum pump. The suction pipe 83, the port 63a, the communication path 63b, the annular path 63c, the communication path 53b, the axial path 53a, the connector 93A, the relay pipe 93P, and the connector 93B are sequentially introduced into the suction groove 11b. Thus, the wafer W can be attracted to the stage 10 and can be held firmly. Then, the rotation drive motor 40 is driven to rotate the rotating cylinder 50 and the stage 10 together, and thus the wafer W is rotated. As a result, the communication path 53b in the rotary cylinder 50 rotates in the circumferential direction of the annular path 63c of the fixed cylinder 60, but the communication state between the communication path 53b and the annular path 63c is always maintained. Therefore, the suction state of the wafer W can be maintained even during rotation.

  As shown in an enlarged view in FIG. 3, the suction pressure of the suction channel is between the outer peripheral surface of the upper and lower rotary cylinders 50 and the inner peripheral surface of the fixed cylinder 60 from the communicating portion of the communication path 53 b and the annular path 63 c. It also acts between the inner peripheral surface of the seal groove 63d and the gasket 73 through the clearance. This suction pressure acts in the direction of expanding the gasket 73 having a U-shaped cross section. Accordingly, the larger the suction pressure, the stronger the gasket 73 is pressed against the inner peripheral surface of the seal groove 63d, and the seal pressure increases. Accordingly, it is possible to reliably prevent leakage from occurring from the clearance between the outer peripheral surface of the rotating cylinder 50 and the inner peripheral surface of the fixed cylinder 60.

  Before and after the start of the rotation of the stage 10, the organic film processing head 20 is advanced from the retracted position (virtual line in FIGS. 1 and 2) to the processing position (solid line in FIGS. 1 and 2). Then, the laser irradiator 23 converges and irradiates a laser to one place on the outer peripheral portion of the wafer W and locally heats it. Touch the heated area. Accordingly, as shown in FIG. 5B, the outer peripheral organic film f2a can be efficiently etched and removed. The treated gas and by-products are sucked and exhausted by the suction nozzle 22.

During the organic film removal process, cooling water is supplied to the annular cooling chamber 11a of the stage body 11. That is, the cooling water of the cooling water supply source is passed through the forward pipe 81, the port 61a, the communication path 61b, the annular path 61c, the communication path 51b, the axial path 51a, the connector 91A, the relay pipe 91P, and the connector 91B in this order. Supply to chamber 11a. As a result, the stage main body 11 and the inner part of the wafer W on the stage main body 11 can be cooled. Even when heat from the laser irradiation is transmitted radially inward from the outer peripheral portion of the wafer W, heat can be quickly absorbed, and the temperature on the inner side of the outer peripheral portion of the wafer W can be prevented from rising. As a result, it is possible to prevent damage to the films f1 and f2 on the inner side of the outer peripheral portion of the wafer W.
After the cooling water flows through the annular cooling chamber 11a, the cooling water passes through the connector 92B, the relay pipe 92P, the connector 92A, the axial path 52a, the communication path 52b, the annular path 62c, the communication path 62b, and the port 62a in order. It is discharged from the return pipe 82.

  The rotation of the stage 10 causes the communication path 51b inside the rotary cylinder 50 to rotate in the circumferential direction of the annular path 61c. However, the communication path 51b always maintains the communication state with the annular path 61c regardless of the rotational position. maintain. Similarly, the communication path 52b also rotates in the circumferential direction of the annular path 62c, but the communication state with the annular path 61c is always maintained. Thereby, the circulation of the cooling water is maintained even while the stage 10 is rotating.

As shown in an enlarged view in FIG. 3, the cooling water in the cooling forward path is a clearance between the outer peripheral surface of the upper and lower rotating cylinders 50 and the inner peripheral surface of the fixed cylinder 60 from the communicating portion of the communication path 51 b and the annular path 61 c. Then, the gas also flows into the annular seal groove 61d and further flows into the opening of the gasket 71 having a U-shaped cross section. The gasket 71 having a U-shaped cross section is expanded by the pressure of the cooling water and is pressed against the inner peripheral surface of the seal groove 61d. Thereby, the sealing pressure of the gasket 71 can be obtained with certainty, and the cooling water can be prevented from leaking. A similar effect can be obtained with the gasket 72 in the cooling return path.
By rotating the stage 10 at least once, the entire organic film f2a on the outer periphery of the wafer W can be removed.

When the removal process of the organic film f2a is completed, the gas blowing from the blowing nozzle 21 and the suction from the suction nozzle 22 are stopped, and the organic film processing head 20 is retracted to the retreat position.
Further, the center pad 12 is slightly lifted by the lift drive system of the pad drive unit 14 and is sucked against the lower surface of the wafer W, while the wafer W is not attracted by the stage body 11. Then, the center pad 12 is raised to the protruding position by the lifting drive system.

  Subsequently, the inorganic film processing head 30 is advanced from the retracted position (solid line in FIGS. 1 and 2) to the processing position (virtual line in FIGS. 1 and 2). Accordingly, the wafer W is inserted into the insertion port 31 of the inorganic film processing head 30, and the outer peripheral portion of the wafer W is positioned inside the guide path 32. Since the wafer W is lifted by the center pad 12, the inorganic film processing head 30 at the processing position can be separated above the stage main body 11, and interference with the stage main body 11 can be avoided.

  Then, a gas corresponding to the component of the inorganic film f1 such as nitrogen, oxygen, fluorine or the like is converted into plasma by a plasma discharge device (not shown), and this plasma gas is introduced into one end of the guide path 32 in the extending direction. The plasma gas reacts with the inorganic film f1a on the outer peripheral portion of the wafer W while passing through the guide path 32, whereby the inorganic film f1a can be etched and removed as shown in FIG. 5C. The treated gas and by-products are discharged from the other end of the guide path 32 through an exhaust path (not shown).

  At the same time, the center pad 12 is rotated by the rotational drive system of the pad drive unit 14. By rotating the center pad 12 at least once, the entire inorganic film f1a on the outer periphery of the wafer W can be removed.

  When the removal process of the inorganic film f2a is completed, the plasma supply from the plasma discharge apparatus is stopped, and the inorganic film processing head 30 is retracted to the retracted position. Next, a fork-shaped robot arm is inserted between the wafer W and the stage 10. The fork-shaped robot arm is brought into contact with the lower surface of the wafer W that is radially outward from the center pad 12 and the suction of the center pad 12 is released. As a result, the wafer W is transferred onto the fork-shaped robot arm and unloaded.

  According to the stage structure of this surface treatment apparatus, the cooling flow path and the suction flow path of the stage main body 11 can be arranged away from the central axis Lc in the radial direction. It is possible to secure a sufficient space for arranging a mechanism for rotating and the suction channel for the center pad 12.

The present invention is not limited to the above embodiment, and various modifications can be made without departing from the spirit of the present invention.
For example, the surface treatment apparatus may remove only one kind of film such as an organic film. In this case, the inorganic film processing head 30 is naturally unnecessary. Further, the rotational drive system for the center pad 12 is not necessary.
Instead of the inner peripheral surface of the fixed cylinder 60, groove-shaped annular paths 61c, 62c, 63c may be formed on the outer peripheral surface of the rotary cylinder 50.
Instead of the annular cooling chamber 11a, cooling stages such as concentric multiple circles, radial shapes, and spiral shapes may be formed in the stage body 11 as terminals of the cooling flow paths.
The wafer mounting surface of the stage does not have to face upward, and the axis Lc does not have to be vertical.

  The present invention is applicable to removing unnecessary films on the outer peripheral portion of a wafer in the field of semiconductor manufacturing.

It is a plan view of a surface treatment apparatus according to an embodiment of the present invention, It is a longitudinal cross-sectional view of the said surface treatment apparatus. It is a longitudinal cross-sectional view which expands and shows the boundary part of the fixed cylinder and rotary cylinder of the said surface treatment apparatus. FIG. 4 is a horizontal sectional view of the shaft assembly of the surface treatment apparatus along the line IVA-IVA in FIG. 3. FIG. 4 is a horizontal sectional view of the shaft assembly of the surface treatment apparatus taken along line IVB-IVB in FIG. 3. FIG. 4 is a horizontal sectional view of the shaft assembly of the surface treatment apparatus taken along the line IVC-IVC in FIG. 3. It is sectional drawing which expands and shows the outer peripheral part of a wafer, (a) shows the state before a process, (b) shows the state which removed the organic film, (c) removed an inorganic film further Shows the state.

Explanation of symbols

Lc Center axis W Semiconductor wafer (base material)
f1, f2 Films f1a, f2a Unnecessary film 10 on the outer periphery part Stage 11 Stage body 11a Annular cooling chamber (terminal of cooling channel)
11b Adsorption groove (terminal of suction channel)
12 Center pad 40 Rotation drive motor (Rotation drive means)
50 Rotating cylinder 51a Axial path 52a of cooling forward path 53a Axial path 53a of cooling return path 60 Axial axial path 60 for suction Fixed cylinder 61a Port 62a of cooling return path 63a Suction port 61c Annular path 62c of cooling return path Annular cooling path Path 63c Suction annular path 61d Cooling forward path annular seal groove 62d Cooling return path annular seal groove 63d Suction annular seal groove 71 Cooling forward path gasket 72 Cooling return path gasket 73 Suction gasket

Claims (6)

A stage having a flow path for exerting a required action on a substrate to be surface-treated and rotatable about a central axis;
A stage body provided with an installation surface on which the substrate is installed and a terminal of the flow path;
A fixed cylinder provided with a port of the flow path;
A rotating cylinder that is rotatably inserted into the fixed cylinder and is coaxially connected to the stage body;
Rotation driving means for rotating the rotating cylinder;
An annular path connected to the port is formed on the inner peripheral surface of the fixed cylinder or the outer peripheral surface of the rotary cylinder,
An axial path extending in the axial direction is formed in the rotating cylinder, one end of the axial path is connected to the annular path, and the other end is connected to the terminal. Stage structure. The surface treatment is for locally heating the outer peripheral portion of the substrate and bringing the reactive gas into contact with the locally heated portion, thereby removing the film on the outer peripheral portion,
A fluid for cooling the substrate is passed through the flow path,
The stage structure according to claim 1, wherein the terminal is a base material cooling chamber or path provided inside the stage main body. An annular seal groove is formed on both sides of the annular path on the inner peripheral surface of the fixed cylinder or the outer peripheral surface of the rotating cylinder,
The stage structure according to claim 2, wherein each seal groove accommodates a gasket having a U-shaped cross section that opens toward the annular path. The terminal is a suction groove formed on the installation surface;
The stage structure according to claim 1, wherein the port is evacuated. An annular seal groove is formed on both sides of the annular path on the inner peripheral surface of the fixed cylinder or the outer peripheral surface of the rotating cylinder,
The stage structure according to claim 4, wherein each seal groove accommodates a gasket having a U-shaped cross section that opens toward the opposite side to the annular path. A center pad is arranged at the center of the stage body,
The pad shaft connected to the center pad is accommodated inside the rotary cylinder, and the center pad is advanced and retracted in the axial direction via the pad shaft. Surface treatment stage structure.

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