TWI284369B - Method and device for treating outer periphery of base material - Google Patents

Abstract

The present invention enhances the removing efficiency of unnecessary material covering the outer peripheral part of wafer substrate and prevents the micro-particles from adhering onto the wafer. In the present invention, the reactive gas used to remove the unnecessary material is observed, from the direction orthogonal to the wafer 90, to spout out from the spouting nozzle 75 in the direction alongside the peripheral direction of the treated position located on the outer peripheral part 90a of wafer 90 toward the afore-mentioned treated position. The attracting nozzle 76 is made to attract the vicinity of the afore-mentioned treated position, in the direction of lower lateral than the afore-mentioned treated position and roughly along the direction of the afore-mentioned peripheral direction.

Description

[Technical Field] The present invention relates to a method and apparatus for removing an unnecessary substance such as an organic film covering an outer peripheral portion of a substrate such as a semiconductor wafer or a liquid crystal display substrate. [Prior Art] A substrate film such as a semiconductor wafer or a glass substrate for liquid crystal display, an organic photoresist, a polyimide, or the like is known as a coating by a spin 5 coating method by CVD. , PVD stacked film and the like. {Yes' Spin coating The coating material applied to the outer peripheral portion of the substrate is thicker than the center name, causing the outer peripheral portion to be convex. In addition, when CVD uses plasma cvd, d concentrates on the edge portion of the outer periphery of the substrate, causing abnormality of the film. Therefore, the film quality of the outer peripheral portion of the substrate is different from that of the central portion, and the film thickness is larger than that of the middle portion. . In the case of thermal CVD using ozone (〇3) and TEOS, the resistance of the reactive gas in the edge portion of the center portion and the outer periphery of the sapwood is different, and the film quality of the outer peripheral portion of the substrate is different from that of the central portion. In the process of semiconductor wafers, the carbonized gas deposits accumulated in an anisotropic manner spread from the outer end surface of the wafer to the back surface and also accumulate thereon. Therefore, an unnecessary organic substance adheres to the outer peripheral portion of the back surface of the wafer. The film on the outer peripheral portion of the substrate is likely to be broken when the substrate is transported by a conveyor and transported in a transport case, and may be generated. Microparticles are attached to the wafer by μ dust, resulting in a decrease in yield... Previously, in the anisotropy (4) above, the film formed by the extension of the money compound f to the back side, such as by dry-day R&D ashing 'The oxygen plasma is spread from the side of the wafer 107857.doc 1284369 to the back side for removal. However, the 1gw pin is damaged during dry ashing. Therefore, it is attempted to process at a low output, but the low-output cannot remove the carbon-gas compound on the back side of the wafer, and the micro-particles are produced during the substrate transfer, which is the main cause of the decrease in yield. The prior art of processing the outer peripheral portion of the semiconductor wafer is disclosed in Japanese Laid-Open Patent Publication No. Hei 5-82478. The upper and lower retainers cover the central portion of the semiconductor wafer so that the outer peripheral portion protrudes therefrom. Spray plasma on top. However, microparticles may be generated due to the fact that the holder is in contact with the wafer. Japanese Laid-Open Patent Publication No. Hei 8-279494 discloses that the center 4 of the substrate is placed on the stage, and the external portion is ejected from above. Japanese Laid-Open Patent Publication No. Hei. No. Hei. No. Hei. No. Hei. No. Hei. No. Hei. No. Hei. No. Hei. Clamping and rotating it, and the heater is embedded in the pedestal of the stage, and the outer circumference of the wafer is contacted and twisted from the back side, and

== The nozzle vertically sprays the reactive gas containing ozone and hydrofluoric acid to the front side of the outer periphery. JH Document 5; Japanese Patent Laid-Open No. Hei 2__96_ discloses that the inside of the C-shaped member is inserted into the inside of the C-shaped member, and the outer periphery of the crystal is heated from the back side by the infrared lamp, and the _-direction from the c-shaped member (four) The suction of the bow is attractive. And from the inner bottom side of the C-shaped member, in general, for the orientation of the crystal and the positioning of the stage, outside the wafer, 107857.doc 1284369 will be attached to the notch and need to be formed with an orientation plane at the periphery of the notch. The film which is not required for the edge of the notch portion such as the groove is also operated by the outline shape of the portion at the time of the removal process. Japanese Patent Laid-Open Publication No. Hei 05-144725 discloses a flat (four)= different from the main nozzle of the circular portion of the processing wafer, and moves the orientation flat nozzle to move along the orientation plane. Thereby the oriented plane portion can be processed. 1 line shift

Patent Document 7: JP-A-2003.188234, which is different from each other. A plurality of pins abut on the outer periphery of the wafer to be aligned with the wafer. Patent Document 8: Special Opening 2003-152051 and Patent Document 9: Special Opening: _-47654' uses an optical sensor to detect the eccentricity of the wafer by non-contact, and corrects it with the robot arm based on the detection result. After that, the raft is placed on the platform. [Patent Document 1] Japanese Laid-Open Patent Publication No. Hei No. Hei. No. Hei. No. Hei. No. Hei. No. Hei. Japanese Laid-Open Patent Publication No. Hei. No. Hei. No. Hei. No. Hei. No. Hei. No. Hei. No. Hei. JP-A-2004-47654 SUMMARY OF THE INVENTION (Problems to be Solved by the Invention) 107857.doc 1284369 The object of the present invention is to remove the carrier from the outer layer of the substrate such as the Japanese yen and the liquid crystal substrate. The removal efficiency of the substance is wide and the microparticle temple is prevented from adhering to the substrate. (Means for Solving the Problem) In order to solve the above problem, the present invention removes a reactive gas for an unnecessary substance, and observes it from the direction perpendicular to the substrate and the direction of the crucible, and is substantially along the outer periphery of the substrate. In the circumferential direction of the position to be processed, the person who is ejected to the position to be processed is also observed in a direction orthogonal to the other substrate, and sucks the above-mentioned object in a direction substantially along the circumferential direction of the processed position of the substrate. The person in the vicinity of the processing location. * Use of a reactive gas such as ozone. When an organic substance such as an organic (tetra) film such as an i〇wk film or a fluorocarbon deposited at the time of (iv) is effectively removed under normal pressure, heating is required. As shown in the ®1G8, when the photoresist is removed as an unnecessary organic film, almost no reaction occurs in the vicinity, and the residual ratio increases in the vicinity of the 15th generation. From about 20 CTC, the etch rate increases approximately linearly with temperature. However, when the entire wafer is exposed to a high-temperature atmosphere, the oxidation of copper and the change in characteristics of the l〇w-k film occur, and the wiring and the insulating film are deteriorated, and the device characteristics are deteriorated. In the above-mentioned patent documents and the like, the heater is abutted on the peripheral portion except for the removal of the crucible, but the heat is transferred from the outer peripheral portion of the substrate to the central portion, and the central portion may be heated. Further, when the heater is an infrared lamp or the like, the infrared ray is also irradiated to the central portion of the substrate to directly heat it, which may increase the temperature. When a reactive gas such as ozone is introduced into the center portion of the substrate having such a high temperature, the film may be etched. In addition, the film at the center of the substrate may also deteriorate. Therefore, the substrate peripheral processing apparatus may further comprise: 107857.doc 1284369 (a) a stage having a support surface contacting the support substrate; (b) a heater attached to the substrate supported by the stage (c) a reactive gas supply means for supplying a reactive gas for removing an unnecessary substance to the treated position; and (d) a heat absorbing means provided in the above-mentioned load On the stage, and absorb heat from the support surface (refer to Figure 1 to Figure 13, etc.). Further, the substrate may be brought into contact with the support surface supported on the stage, and the outer peripheral portion of the substrate may be heated, and the portion closer to the inner side of the outer peripheral portion may be compared, and the heat absorbing mechanism provided on the stage may absorb heat. Further, a reactive gas for removing unnecessary substances is supplied to the outer periphery of the heated portion (see FIGS. 1 to 13 and the like). More preferably, the substrate is brought into contact with the support surface supported on the stage, and the heat is applied. The outer peripheral portion of the substrate is radiantly heated, and the portion closer to the inner side than the outer peripheral portion is heated by the heat absorbing means provided on the stage, and the reactive gas is supplied to the local portion. Thereby, unnecessary substances in the outer peripheral portion of the substrate can be effectively removed. Further, even if the heat is transmitted from the outer peripheral portion to the inner portion (center portion) of the outer peripheral portion of the substrate, and the heat of the heater is directly applied, the heat absorbing mechanism can absorb the heat. Thereby, the film and wiring of the inner portion of the substrate can be prevented from being deteriorated. Further, even if the reactivity flows into the inner side from the outer peripheral side of the substrate, the reaction can be suppressed. This prevents damage to the inner portion of the substrate. The support surface of the stage is preferably smaller than the substrate, and the processed position of the periphery of the substrate is located outside the radial direction of the support surface. 107857.doc 1284369 The heat absorbing mechanism is such that the carrier is cooled by a refrigerant.

The specific structure is such that a refrigerant chamber is formed inside the stage, as a front and a heat mechanism, and a supply path and a discharge path for connecting the refrigerant to the refrigerant chamber are shown in FIG. 1, FIG. 6, FIG. 7, and FIG. . The V medium is fed into the refrigerant chamber to be filled or circulated and circulated, so that it can be sucked from the substrate. Borrow = expand the internal volume of the refrigerant room, can fully increase the heat capacity or even absorb (four). The refrigerant uses fluids such as water, air, and helium. It is also possible to compress the refrigerant and the like and supply it to the refrigerant chamber. Thereby, it is possible to flow through the respective corners of the refrigerant chamber in an average manner to increase the heat absorption efficiency. Further, even if the refrigerant supply strength 敎' or the supply and discharge are stopped even if it is filled, the natural convection in the medium can ensure the heat absorption. The common passage may constitute a refrigerant supply path and a refrigerant discharge path connected to the refrigerant chamber. It may also be on the inside and the back side of the aforementioned stage (on the opposite side of the support surface)

The surface is designed to pass a refrigerant passage as a heat absorbing means by a pipe or the like, and a refrigerant is passed through the refrigerant passage (see Figs. 8, 9 and the like). V The refrigerant passage may be formed from a portion on the side of the support surface inside the stage toward a portion opposite to the support surface (see Figs. 6, 7 and the like). Thereby, the heat absorption efficiency can be further improved. A chamber may be formed inside the aforementioned stage, the chamber being divided into a first chamber portion on the support surface side and a second chamber portion on the opposite side of the support surface, and the first and second chamber portions are in communication with each other, the first The chamber portion constitutes a passage portion on the upstream side of the refrigerant passage, and the second chamber portion constitutes a passage portion on the downstream side of the refrigerant passage (see Figs. 6, 1 and the like). Further, the refrigerant passage may be formed by dividing the outer peripheral portion of the stage toward the center 107857.doc 1284369 (refer to r (d)), and the side closer to the outer peripheral portion can be sufficiently cooled, and the heat transmitted from the outer peripheral portion of the substrate can be surely absorbed. Soil—protects the membrane at the center. The refrigerant passage is formed by a thirsty volume or a number of circular paths that form a concentric shape, and is located at 1.10 million. The connection of the annular path is shown in Fig. 9 and the like.) The heat absorbing mechanism may further include the heat absorbing side facing the branch, ^

The Peltier component in the stage (see Figure 丨丨). The Peltier element can be placed close to the support surface. In addition, a fan and a heat sink for auxiliary heat dissipation can be provided on the running side (heat dissipation side) of the Peltier element. The heat absorbing mechanism may be provided in substantially the entire area of the stage (see FIGS. 1 to 11 and the like, and may absorb heat from substantially the entire support surface. The heat absorbing mechanism may be provided on at least the outer peripheral side portion of the stage. The inner heat absorbing mechanism may be provided only in the outer peripheral side portion (outer peripheral region) and the central portion (central region) of the above-described stage. The outer peripheral side portion (see FIG. 13 , FIG. 21 , and FIG. 23 , etc.), whereby heat can be absorbed only from the outer peripheral side portion of the support surface, and heat from the outer peripheral portion of the substrate disposed on the outer side can be surely absorbed, and heat can be removed. It can prevent unnecessary heat absorption and cooling to the central side, and can save heat source. On the above stage, an electrostatic and vacuum suction chuck mechanism for absorbing the substrate should be inserted as a fixing mechanism for the substrate ( Referring to Fig. 18 to Fig. 23 and the like), the substrate can be brought into close contact with the support surface, and the absorbing ability can be surely exhibited. Although a mechanical chuck mechanism such as dropping can be used, 107857.doc 12 I284369 2The peripheral part of the substrate is partially in contact with the mechanical loss plate, so it is still necessary to form the electrostatic chuck mechanism and the vacuum chuck mechanism. The vacuum chuck mechanism and the suction groove should be reduced as much as possible. Therefore, the contact area between the substrate and the stage can be increased, and the heat absorbing efficiency can be ensured. The chuck mechanism is preferably provided only on the outer peripheral side portion of the stage, not on the center side portion (see FIGS. 22 and 23). It is preferable to form a concave portion recessed from the outer peripheral side portion on the support surface on the center side of the stage (see FIGS. 22 and 23, etc.). This can reduce the contact area between the stage and the substrate, and can reduce the suction. At the time of introduction:: fine particles. In addition, when the heat absorbing mechanism is provided on at least the outer peripheral side of the stage, the outer peripheral portion of the stage is in contact with the wafer, so that the heat transmitted from the outer peripheral portion of the wafer to the heat can be surely absorbed. It is indeed prevented that the central portion of the wafer is heated. The chuck mechanism can also be provided in substantially the entire area of the support surface of the stage (see Fig. 18 to Fig. 21, etc.) ..., the composition of the reactive gas is removed. Need item f to choose. If necessary In the case where an organic film such as a carbon-based compound is not required, it is preferable to use a gas containing oxygen. It is preferable to use a highly reactive oxygen-based gas containing ozone or oxygen (IV). It is also possible to directly use non-oozonated and free radicals. The pure oxygen and air of the general oxygen. The ozone (〇3) is decomposed into oxygen molecules and oxygen atoms (〇2 + 0) to form a thermal equilibrium state of (〇3) human (20). The life of ozone depends on the temperature. It is very long in the vicinity of 25. It is halved near the machine, and it is reduced by half when it is near the machine. In the case of the inorganic film that is not required for the removal of the eyebrow, the perfluorocarbon (PFC) can be added to the oxygen in the 107857.doc 1284369. In addition, it may be a gas containing oxygen such as hydrofluoric acid vapor. A reactive gas supply source (reactive gas generating reactor) of the reactive gas supply means, and a normal piezoelectric slurry device may be used (see Figure 图, Figure 24, Figure 27, etc.). When the reactive gas is ozone, an ozonator (see Fig. 29 to Fig. 31, Fig. 34 to Fig. 37, Fig. 41 to Fig. 5, Fig. 52, etc.) may be used. When the reactive gas is fluoric acid vapor, a vaporizer of a hydrofluoric acid and a φ ejector may be used. ° The constant-voltage t-treatment device forms a glow discharge between the electrodes at a substantially normal pressure (a pressure close to atmospheric pressure), and plasma-treats the process gas (package » · radicalization and ozonation to form a reactive gas In addition, in the present invention, the term "substantially normal pressure" means a range of 1〇13χ1〇4 to 5〇663χΐ〇4, and when the pressure adjustment is facilitated and the structure of the device is simplified, it is preferably 1.333X104~ 1〇.664x1〇4 Pa, more preferably 9 33ΐχΐ〇4~ι〇397χΐ〇4 Pa. • The reactive gas supply mechanism is preferably configured to form a reactive gas from the reactive gas supply source. The discharge path forming member of the path to the position to be processed (see the figure, etc.). The reactive gas supply source may be disposed in the vicinity of the position to be processed, or may be disposed away from the disposed position, and guided to the processed portion by the discharge path forming member. The discharge path forming member may be tempered by a discharge path temperature adjustment mechanism (see FIGS. 34, 35, and 37, etc.), thereby allowing passage through the discharge path.

The reactive gas is tempered to maintain the activity at a suitable temperature, while being held at an appropriate temperature. If the reactive gas is ozone, it is maintained at about 107857.doc by cooling.

25. In other words, it is possible to prolong the oxygen free of the substance I, which can surely ensure a negative reaction with the undesired substance, which in turn can improve the removal treatment efficiency. The spout path tempering mechanism ' can be constructed by a tempering road fan that passes through the tempering medium. Alternatively, the nozzle-out path forming member may form a double tube structure nt inner path such as a discharge path, and a reactive gas may flow into the annular path as a temperature regulation path, and pass through the temperature adjustment body. The temperature control medium can use water, air, helium, and hydrocarbons (10) n): the discharge path forming member can be formed to be cooled along the stage by the heat absorption means (see Fig. 36 and the like). Thereby, it is not necessary to provide a cooling mechanism of the discharge path, and the structure can be simplified, and the cost can be reduced. In the case of the cold-reactive gas, when the reactive gas is used in the form of ozone, it is preferable that the reactive gas supply means has a discharge port forming member (discharge nozzle) for forming a discharge outlet for discharging the reactive gas. (Refer to FIG. 2 41 to FIG. 45 and FIG. 47 to FIG. 52, etc.). Preferably, the discharge port is disposed toward the processed position and is disposed close to the processed position (see Figs. 1, 24 to 29, and 47 to 50, etc.). The discharge path from one reactive gas supply source may be divided into a plurality of discharge ports. The shape of the discharge port of the sun transport may be a spot shape (see FIG. 47 to FIG.), or may be a line shape along the circumferential direction of the stage, or may be along the circumferential direction of the stage. The entire circumference is ring-shaped (see Fig. 30 and Fig. 31, etc.). It is also possible to form a dot-shaped (Spot-shaped) discharge port for the light source, and form a linear nozzle for the linear light source 107857.doc -15·1284369 port to form an annular discharge port to the annular light source. Further, a plurality of dot discharge ports and linear discharge ports may be disposed along the circumferential direction of the stage, or a swirling flow forming portion for swirling the reactive gas in the circumferential direction of the discharge port may be provided in the cutting discharge port forming member ( Refer to Figure 40, etc.). Thereby, the reactive gas can be uniformly sprayed at the treated portion of the substrate.

The swirling flow forming portion has a swirling guide hole extending in a substantially tangential direction of the discharge port and connected to the inner circumference of the discharge port, and is disposed apart from each other in the circumferential direction of the discharge port to arrange a plurality of 'there are such turning holes It is necessary to constitute a path portion on the upstream side of the discharge port (refer to FIG. 40 and the like). On the outer peripheral portion of the substrate, there is a case where an organic and inorganic film is not required to be stacked (see Fig. 78). In general, the gas which reacts with the organic film differs depending on the type of gas in which the stone reacts with the inorganic film, and the manner in which it is required to be twisted is also different. An organic film such as a photoresist or the like is as described above, and ashing by a addition of a southing reaction is required. In addition, the inorganic port such as dioxo (si02) can be hunted as a chemical reaction under temperature (4). Therefore, the reactive gas is a reactive gas such as an oxygen-based reactive gas which reacts with the organic film, and the like. a reactive gas supply mechanism (a first reactive gas supply mechanism can be used to remove the organic film. s_ Na Fu, a film reaction body (#进-step damage will be outside the substrate on the aforementioned non-described stage; , the second gas (reactive gas) is supplied to the previous figure 7_. etc.. Borrow:: 2 = gas supply mechanism (refer to . , A ^ page separately 5 and remove the no _ dedicated processing to and load ... can be simplified Device configuration, and the membrane treatment site is transferred to the inorganic membrane treatment site or from the inorganic membrane treatment: 107857.doc 1284369 . Transfer to the organic membrane treatment site, which can further prevent the microparticles generated by the accompanying transfer, and further increase the flux. In addition, by using nozzles of different gas types, the problem of cross-contamination can be avoided. The organic film is composed of organic substances represented by CmHn〇i (m, n, 1 series integer) such as photoresist and polymer. Have and The first reactive gas of the reactivity of the membrane is preferably a gas containing oxygen, more preferably a highly reactive oxygen-containing gas such as oxygen radicals or ozone, and a pure oxygen gas φ and air can be used as it is. The oxygen-based reactive gas can be produced by using a plasma discharge device and an ozonator using oxygen gas (〇2) as a material gas. The organic film increases the reactivity with the first reactive gas by applying heat. The oxygen-based reactive gas is not suitable for removing the inorganic film. The inorganic film is composed of cerium oxide (SiO 2 ), cerium nitride (SiN), p-Si, l〇wk film, etc., and has reactivity with the inorganic film. A fluorine-based reactive gas such as a fluorine radical (F*) can be used as the second reactive gas, and a pFC gas such as carbon tetrafluoride (CF4) or hexafluoride (cj6) can be used as the fluorine-based reactive gas. The fluorine-containing gas of CHF3 and HFC 4 is produced as a material gas by using an electric discharge device. The fluorine-based reactive gas does not easily react with the organic film. As described above, the etching of the inorganic film can be carried out usually at normal temperature, but it also exists. Inorganic substances that require heating, such as The substrate peripheral processing apparatus may be applied to remove an inorganic film which is required to be heated as an unnecessary substance. Corresponding to a reactive gas such as carbon tetrafluoride, which is contained in the mosquito, and (4) to (4) The substrate peripheral processing device of the structure is stacked on the substrate: a first-inorganic film (such as a carbonized stone eve) which can be inscribed at a high temperature, and a ratio of 107857.doc 1284369 at a high temperature. The first inorganic film _ only etches the 廿 楚 μ μ-inorganic film (such as cerium oxide) 'is effective in the first and second inorganic materials - inorganic film. The light source 'and the light source' will come from the light source (see Fig. 1 and the like), whereby the substrate can be heated in a non-contact manner. The adding device is not limited to a light-emitting heater, and an electric heater or the like can also be used. When the radiant heater is used as the light source of the second heater, lasers and lamps can be used. The light source may be a point light source, or may be a linear light source along the circumferential direction of the stage or an annular light source along the entire circumference of the stage. In the case of a point light source, the peripheral portion of the substrate can be locally heated at a point. The laser light source is usually a point light source, which has good condensing property and is suitable for bundling irradiation. It can impart energy to the untreated substance at the treated portion at a south density, and can be heated to a high temperature instantaneously. The control width is also easy to control. The type of laser can be

LD (semiconductor) lasers can also be YAG lasers, excimer lasers, or other forms. (3) The wavelength of the laser is just nm~94Gnm, the wavelength of the YAG laser is 1〇64 nm, and the wavelength of the excimer laser is 157~351 lung. The output density should be 1 〇 W/_ or more. The form of vibration can also be CW (continuous wave) or pulse wave. It must be continuously processed for switching at a high frequency. It is also possible to make the output wavelength of the aforementioned light source correspond to the absorption wavelength of the aforementioned unwanted substance. Such 'effectively imparts energy to unwanted substances, and improves heating efficiency. The light-emitting wavelength of the light source may correspond to the absorption wavelength of the above-mentioned two-quality absorption. Alternatively, the wavelength extraction mechanism such as a bandpass chopper may extract only the absorption wavelength of 107857.doc 18-1284369. In addition, the absorption wavelength of the photoresist is 1500 nm to 2000 nm. The spot light of the point light source can also be converted into a linear light along the outer peripheral portion of the substrate by a convex lens, a cylindrical lens or the like. When the light source is linear, the range extending in the circumferential direction of the outer peripheral portion of the substrate can be locally linearly heated.

When the light source is annular, the outer circumference of the outer peripheral portion of the substrate can be heated in a partial annular shape. A plurality of point light sources and linear light sources may be arranged along the circumferential direction of the stage. The light source is an infrared lamp such as a near-infrared lamp such as a halogen lamp or a far-infrared lamp. The light source of the light source is continuous light. The wavelength of the infrared lamp is 760 nm to 10000 nm, and 76 〇 nm to 2 〇〇〇 (4) becomes the near-infrared band. It is preferable to use the wavelength extraction means such as the band pass chopper to irradiate the wavelength region from the wavelength of the absorption wavelength suitable for the unnecessary substance f. In the case of a month, the ferroelectric heater (especially in the form of a light source) must be cooled by a firing heater such as a refrigerant or a fan (see Fig. 3, etc.). The light-emitting heater may also include an optical transmission system such as a waveguide extending from the light source to the processed position, and may be transmitted from the light source to the vicinity of the outer periphery of the substrate. It is easy to use this fiber for the waveguide. The fiber should form a bundle of numbers (majority). The waveguide may be extended to include a number of edges, and the end portion of the waveguide may be separated from the light source (refer to Fig. 39 and the like). It is a dream to separate the circumferential direction of the stage and separate them from each other in the circumferential direction. The light-emitting portion (see Fig. 1 and the like) is preferably optically connected to the end portion of the optical member for the bundling of the optical fiber or the like. The aforementioned W7857.doc -19- 1284369 describes that the illuminating portion of the radiant heater must include a bundling optical system (concentrating light) · $ · a parabolic cylindrical mirror that converges the heat rays from the light source toward the processed position, a convex lens, and Cylindrical lens, etc. The bundling optical system can also be any one of a parabolic mirror, a convex lens, and a cylindrical lens. It can also be a combination of several. j:..., the σ 卩 must be inserted into the focus adjustment mechanism. The position can be aligned, and there can be some deviation. Thereby, the density of the radiant energy and the irradiation area (light collecting path, spot diameter) of the outer peripheral portion of the substrate can be adjusted to be suitable for the aforementioned focus adjustment. The mechanism can be used as follows: When processing the missing portion of the groove or the orientation flat surface of the outer periphery of the substrate, the focus of the front field spray heater is applied to the outer circumferential sentence of the substrate other than the notch portion in the optical axis direction. The deviation can be made. Thereby, the irradiation width on the substrate can be made (light=shooting groove and the treatment outside the plane of orientation are more ambiguous, so that the heat rays can also be two: the edge of the groove and the orientation plane, and then the adhesion can be removed. In the groove and 疋: the film on the edge of the plane (refer to Figure 14 and so on). Up = the focus adjustment mechanism illuminates the focus of the radiant heater in the direction of the optical axis to adjust the illumination width on the outer circumference of the substrate. Further, the width of the film is not required (see Fig. 16 and the like). The crucible is still slightly slid in the radial direction of the substrate, and the width is (see Fig. 17 and the like). The field W ^ points, so that _ 2 2 = the width of the material of the same size of the outer circumference of the material must be "slightly sliding ° and should be irradiated from the inner circumference side of the base, and sequentially in the outer radius of 107857.doc -20 - 1284369 to the tiny slide. A reflection member that totally reflects the heat rays from the light source toward the processed position may be provided on the inner side of the processed position and in the vicinity of the processed position (see Fig. 28 and the like). Thereby, the light source can be disposed in the vicinity of the extension surface of the support surface and on the front side thereof. The substrate peripheral processing apparatus may further include: (a) a stage having a support surface for supporting the substrate so as to protrude from the outer peripheral portion; (9) a radiant heater having a light source supported by the stage And the optical system is disposed so as not to scatter heat rays from the light source toward the processed position; and (C) a reactive gas supply mechanism; And having a reactive gas supply source connected to a reactive gas for supplying an unnecessary substance, and a discharge port for ejecting the reaction T gas. The discharge port is on the side of the support floor or on the side of the β side of the extension surface Or, the extension surface is arranged to be close to the processed position, and is arranged (10) as shown in Fig. 24 to Fig. 30', Fig. 34 to Fig. 39, Fig. 41 to Fig. 44, and the like. It is also possible to carry out local heating by means of the heat rays of the illuminator in such a manner that the outer peripheral portion of the substrate is protruded from the substrate by the stage, and the substrate is supported by the heat rays in the vicinity of the back surface of the substrate. In the vicinity of the ρ mouth, the 卩 , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , Remove the material that covers the second (4). What is the need for the outer peripheral part of the I07857.doc Ϊ284369 Hunt this, you can partially irradiate the heat on the outer periphery of the back of the substrate to implement the heat of the sleeve, which can be used in the local heating area. The reactive gas is sprayed from the vicinity thereof, whereby the unnecessary substance at the portion can be effectively removed. The support surface of the reference carrier is preferably slightly smaller than the substrate, and the processed position of the outer peripheral portion of the substrate is located at a position higher than the aforementioned branch. The selective surface is extended on the outer surface in the radial direction. The irradiation portion may be disposed inside the extended surface, and the discharge port may be disposed on the inner side of the extended surface or substantially on the extended surface (see Japanese, etc.). this The heat can be locally irradiated on the outer peripheral portion of the back surface of the substrate, and the reactive gas can be sprayed from the vicinity of the portion where the core is locally heated. Thereby, the unnecessary substances in the portion can be effectively removed. The portion is disposed close to the treated position. By 2', the anti-library can be supplied to the treated position in a state of non-diffusion, high concentration, and high activity, and the efficiency of removing unnecessary substances can be surely improved. Preferably, the discharge port is disposed away from the above-mentioned discharge port, whereby the layout of the irradiation portion and the formation member is easy. 2 The irradiation portion and the discharge port of the radiant heater are preferably in the above-mentioned processed position == Arranged in the direction (see Fig. 1 and the like), whereby the layout of the light-emitting heater and the discharge port forming member is more convenient. The irradiation unit and the discharge port of the radiant heater are substantially disposed as described in the processed position ' Orthogonal to the above-mentioned extension 2 (refer to FIG. 1 and the like, by arranging the radiant heater illuminating portion substantially on the orthogonal line of 107857.doc -22 - 1284369 described above, the heating efficiency can be improved by spraying The outlet is arranged substantially on the orthogonal line described above to improve the reaction efficiency.

The discharge port forming member (discharge nozzle) forming the discharge port of the reactive gas supply means is made of a light-transmitting material. Thereby, even if the light of the light-emitting heater is disturbed by the discharge port forming member, the light can be transmitted through the discharge port forming member only to the portion to be treated of the substrate, and the portion can be surely heated. Limited by the optical path of the radiant heater, the discharge port forming member can be disposed in close proximity to the treated portion, and the reactive gas can be sprayed from the vicinity to the portion. For the light-transmitting material, quartz, propylene glycol, and transparent can be used. A transparent resin such as Teflon (registered trademark) or transparent polyethylene, etc. In addition, when the transparent resin is used, it is necessary to shatter the ^ ^ ..., f is low, and it must be irradiated without distorting and dissolving. The output of the heater, etc. The discharge port surrounding the reactive gas may be provided. Further, the radiant heater is disposed in the fence... The above-mentioned ^ gg Α η is disposed outside the fence The light-transmitting material forms at least the portion of the fence facing the side of the irradiation portion (refer to 1 to ensure that the reactivity of the treatment is completed _ leakage to: two:: can be heated by the Han-ray heating. The treated part! The stage and the irradiation unit and the discharge port must be relatively movable. The circular stage is a circular stage. The circular shape is “multiple. The light source and the discharge port are arranged around the central axis and can be along the back surface of the substrate. Outside s疋. Hunting, even if the light source is dotted, it is still processed. Even if the first rotation is performed by the above relative rotation, the uniformity of 107857.doc *23- !284369 can be improved. Relative rotation number (relative movement speed) The temperature of the outer peripheral portion of the back surface of the system is appropriately set and set to have a frame that surrounds the stage in the circumferential direction and surrounds the processed position, and forms an annular space between the stage and the stage (see FIG. 2 and the like). In the crucible, the reactive gas that has been treated to be temporarily retained near the treated position can inhibit the diffusion to the outside, and the reaction time can be sufficiently broken. The light source and the discharge port must be accommodated in or facing the ring. In the space mode, the position is fixed to the frame. A red-rotation drive mechanism for rotating the frame against the frame around the central axis is required. The frame may be fixed and the stage rotated, or the frame may be Rotating. It must be provided with a labyrinth of the phase between the side of the surface and the frame. By this, the stage or frame can be rotated without clogging, and leaking to the outside. The surface side portion of the frame between the lunar surface of the body self-loading port and the frame should be provided to extend toward the stage side and cover to the surface side of the treated position' alone or in the same manner as provided in the aforementioned stage The covering member of the annular space (refer to Figs. 24 to (4) to </ RTI> can prevent the reactive gas from being completely leaked out from the annular space, and the cover member must be self-paying to cover the annular space, as shown in Fig. 29, etc.) , set the substrate on the stage or? The multi-cover member is retracted to avoid the influence of the cover member and the removal operation. 107857.doc -24- 1284369 The annular space must be connected to the annular space suction mechanism that attracts the annular space (refer to Figs. 1 and 24). Figure 27, etc.). Thereby, the processed reactive gas can be discharged from the annular space. It is necessary to have a suction mechanism that attracts the vicinity of the discharge port (see FIG. 3 and the like). Thereby, the treated gas can be discharged from the periphery of the treated portion and discharged. In the outer peripheral portion of the support surface of the stage, a step of forming a gas retention portion must be formed in common with the outer peripheral portion of the substrate (see Fig. 37 and the like). Thereby, the reactive gas ejected from the discharge port is temporarily retained in the gas retention portion, and the time of contact with the outer peripheral portion of the substrate can be prolonged, and the reaction time can be sufficiently ensured, and the reaction efficiency can be improved. In the opposite side of the &lt;section of the support surface, an inert gas injection member that sprays an inert gas is placed (refer to FIG. 34 to FIG. 37, etc., to prevent the reactive gas from flowing to the front side of the substrate). It is indeed prevented from damaging the film on the surface side. The inert gas injection member may be a nozzle 'or a fan filter unit. When 'there' the inert gas 构 构 ό ό ό ό ό ό 耵 耵 耵 耵 支撑 支撑 支撑 支撑At least a part of the thickness of the substrate is disposed. The gripping device is further disposed, and the substrate is removed and prevented from being affected. The inert pain can be used to remove pure nitrogen and clean dry air. CDA), etc. Right Γ ΐ 以 'Ozone-based reactive gas _ Wei compound such as infrared bismuth at higher temperatures, the more the residual rate can be improved. Heating mechanism is used; „shooting heating, than the heater, etc. The physical contacts are suitable for the purpose of preventing the generation of fine particles. In addition, the radiation such as laser light is irradiated from the top or the bottom to the outside of the wafer 107857.doc -25 - 1284369. At the outer periphery of the wafer Inclined face and rim Straight, light is oblique or even parallel, the heating efficiency is insufficient, and the etching rate is slow. Therefore, it is also possible to irradiate the substrate to the outer periphery of the substrate by tilting the outer periphery of the substrate by supporting the substrate with the stage. The heat rays are supplied to the reactive gas, and the unnecessary substances covering the outer peripheral portion of the substrate are removed by contact with the reactive gas (see FIGS. 30, 53, 56, and 57, etc.). The irradiation direction of the hot ray on the inclined surface portion and the vertical outer end surface of the outer peripheral portion of the substrate can sufficiently increase the radiant energy density to sufficiently increase the heating efficiency, and further increase the processing speed of the film on the outer periphery of the substrate (I-injection rate) In addition to the direction in which the substrate is tilted (see FIG. 3A, FIG. 57, and FIG. 57, etc.), the direction of the tilting also includes a side direction (parallel to the substrate, X, and the like). The stage supporting the substrate, irradiating the outer peripheral portion of the substrate with heat rays, and supplying the reactive body such that the direction of irradiation of the heat rays is centered on the outer peripheral portion of the substrate and on the main surface of the substrate )positive Plane movement within the outer periphery of the base covering

The unnecessary substances in the part are removed by contact with the reactive gas (see Fig. 60, etc.). The M soil can be used to uniformly irradiate the heat light and the wire on the surface side and the outer end surface and the back surface side of the outer peripheral portion of the substrate, and to treat any portion uniformly. The surface on which the heat rays move is preferably a surface that passes through a radius of the substrate. 107857.doc -26- 1284369 The substrate peripheral processing apparatus may also be provided with (a) a stage having a support surface supporting the substrate; (b) a reactive gas supply mechanism attached to the stage The treated gas at the processing position of the outer peripheral portion of the substrate is supplied with the reactive gas; and (), and is irradiated with heat rays from the direction of the outside of the radius of the support surface toward the processed position (see Figure 30, Figure 53, Figure 56, Figure 57, etc.).

Thereby, the irradiation direction of the heat rays perpendicular to the vertical portions such as the inclined surface portion and the outer end surface of the outer peripheral portion of the substrate can be made to be close to zero, and the incident angle can be made close to zero, and the radiation density can be sufficiently increased to sufficiently increase the heating efficiency. The processing speed (etching rate) of the film which removes the outer periphery of the material can be increased. The substrate peripheral processing apparatus may further include: (a) a stage that has a support surface supporting the substrate; (b) a reactive gas supply mechanism that is processed to the outer peripheral portion of the substrate on the stage Positioning the reactive gas; (0) irradiating the hot spot to the processed position; and (d) moving the unit toward the processed position and on the support surface ( Further, the substrate on the support surface is moved in the plane orthogonal to each other (see FIG. 59 and FIG. 60, etc.). The surface of the outer surface of the substrate can be effectively used, and the surface side and the outer end surface of the outer peripheral portion of the substrate and the backrest portions can be used. The heat rays are irradiated substantially perpendicularly, and are treated in any part. The surface orthogonal to the support surface is preferably a surface passing through the center of the support surface. The supply nozzle and the exhaust nozzle of the reactive gas supply mechanism are provided. .doc -27- 1284369 Moving or even adjusting the angle together with the illuminating unit, although the above-mentioned irradiation (4) is moved and its position is fixed, the irradiation direction should be substantially along the illuminated portion of the outer peripheral portion of the substrate (the irradiated portion) The normal of the center) (refer to Fig. 54, etc.) ^ Thereby, the incident angle at this point can be substantially zero, and the radiant energy density can be surely increased, and the heating efficiency can be surely improved. The reactivity of the substrate peripheral processing device When the discharge nozzle of the gas supply mechanism is tapered from the base end to the end by the same diameter, the reactive gas is sprayed onto the substrate and immediately diffused. Thus, the reaction between the active species is shortened, and the activity is shortened. The utilization efficiency and the reaction efficiency are inferior, and the amount of the reactive gas is also increased. Therefore, the reactive gas supply means of the substrate peripheral processing apparatus includes an introduction portion for removing a reactive gas for an unnecessary substance. Guided to the vicinity of the processed position where the outer peripheral portion of the substrate is located; and the tubular portion connected to the introduction portion and covering the processed position; or the inside of the tubular portion may be enlarged from the introduction portion a temporary storage space in which the reactive gas is temporarily retained (see FIGS. 6A to 66 and 70 to 77, etc.), whereby the utilization efficiency of the reactive gas can be improved and The reaction efficiency and the amount of gas required may be reduced. The cartridge itself or between the tubular portion and the outer edge of the substrate at the position to be treated preferably forms a discharge port continuous with the temporary retention space through which the discharge port is formed. The gas is caused to flow out from the temporary retention space. Therefore, the gas and the reaction by-products can be prevented from being reduced in the degree of reaction 107857.doc -28- 1284369 The product is retained in the new time for a new reactive ❹ 'retention space 'The temporary (four) space can be supplied at any time as in the above-mentioned tube part 2 to further improve the reaction efficiency. 66 and Fig. 71, etc.). And opening to the position to be treated (refer to the figure at this time, the position on the front side of the front side (4) heart / I \ end edge must correspond to the radius of the substrate outside # is taken as a description of the discharge port (refer to Figure 70 and Figure 71, etc.. Worse, can handle the treatment of $ 士, 斤 a temporary (four) illusion, 4 gas and reaction by-products through the gap, from the *W stagnation space is fast ☆ "out" can temporarily supply new in the temporary space It is possible to increase the reaction efficiency by the step of the body. Also, the tube portion is disposed so as to penetrate the processed position, and the cartridge is formed to correspond to the closed portion of the processed position to form the insertion substrate. In the slit of the outer peripheral portion, a and + are introduced to the tubular portion on the proximal end side of the slit (see FIG. 74 to FIG. 77, etc.). The inner portion of the tubular portion on the proximal end side of the slit is introduced. The temporary retention period of two months is not formed in the portion corresponding to the processed position S

The inner peripheral surface of the portion of the edge retaining portion and the outer edge of the wafer at the position to be processed constitute the above-mentioned discharge port. The exhaust passage is completed and directly connected to the tubular portion on the tip end side of the slit (see Figs. 74 and 75 and the like). Thereby, the process completion gas and the reaction by-product can be surely introduced into the exhaust path. Even if fine particles are generated, the exhaust can be surely forced, and the reaction control can be easily performed. Preferably, the base end portion of the cardiac tube σ is provided with a light-transmissive cover portion for blocking the light, and the irradiation portion of the heat ray is preferably disposed outside the cover portion 107857.doc • 29-1284369 toward the processed position ( Refer to Figure 7 and Figure 7 7 etc.). Thereby, when the unnecessary film reacts with the reactive gas to absorb heat, the reaction can be surely promoted. As described above, since the heat absorbing mechanism is effective on the inner side of the outer peripheral portion of the substrate such as a wafer, it is preferable that the diameter of the stage is slightly smaller than the diameter of the substrate such as a wafer, and only the outer peripheral portion of the substrate is the radius of the stage. Outside.

Further, the substrate is placed on the stage, and when it is taken out from the stage, it is preferable to avoid contact with the front side of the substrate. For this purpose, use a fork-shaped robotic arm to pick up - under the substrate (back). However, when only a small number of four knives on the outer peripheral portion of the substrate protrude from the stage, there is no room for abutting the fork under the substrate. Therefore, it is preferable to provide a center of the small diameter movably in the center portion of the stage, as shown in Figs. 86 to 87 and the like. In the state in which the center cymbal protrudes upward from the stage, the substrate is placed on the center pad by a machine arm, and the fork-shaped arm is retracted, and the center pad is lowered to the same plane as the stage. Or when it is recessed, 'the substrate can be placed on the stage ±. After the treatment is completed, the middle cymbal piece is raised. By inserting the forked machine hand between the base material and the stage, the forked machine arm can lift the wafer and carry it out. In the stage of the above-mentioned center gasket of W inch, the center spacer = lower moving mechanism is disposed on the central axis. In addition, it is preferable to attach a suction slab to the center slab, and at this time, a suction flow path from the center cymbal is also disposed on the central axis. In addition, if it is necessary to cool the material, it is also convenient to directly replace the center gasket with the carrier. At this time, the rotation mechanism of the center gasket can also be connected to the central shaft. Therefore, the substrate is attracted to the suction flow path for the stage and to the cooling chamber 107857.doc -30· 1284369, but the flow path is not easily disposed on the central axis, and the small part of the distribution p is not eccentric from the central axis. . Further, since the stage rotates around the central axis, there is a problem in how the stage is connected to the eccentric flow path. The sub-surface: the material peripheral processing device is provided with a stage, which has a flow path for the purpose of temperature adjustment (including cooling) and suction on a substrate such as a wafer to be processed. It can be rotated around the central axis, which has:

The stage body is provided with a terminal for setting the mounting surface of the substrate (the part requiring the above-mentioned functions such as temperature adjustment and suction); ~ 疋清' is provided with an opening of the flow path; Rotatingly inserted into the fixed cylinder and coaxially coupled to the mouthpiece body; and a rotation driving mechanism that rotates the rotating cylinder; forming a connection and a moon on the inner circumferential surface of the cylinder and the outer circumferential surface of the rotating cylinder In the circular path of the opening, an axial direction path extending in the axial direction is formed in the rotating cylinder, and one end of the path in the 5th axis direction may be connected to the terminal at the end portion (see FIG. 87 and the like). And the mind is connected to the other '2', which can be used to adjust the temperature, absorbing, etc. on the substrate such as the wafer, and can rotate the stage and rotate the stage. The other terminal of the advancement and retraction mechanism of the moon is provided in the substrate cooling chamber ' inside the stage body and passes through the cooling fluid 107857.doc -31 - 1284369 which cools the substrate in the flow path. The required function can be used to cool the substrate. The description stage includes: a stage body having a refrigerant chamber or a refrigerant passage # therein as a heat absorbing mechanism; a solid cylinder having an opening for the refrigerant; and a tumbling cylinder rotatably Inserting into the fixed cylinder and coaxially connecting with the carrier body; and rotating the driving machine to rotate the rotating cylinder;

An inner circumferential surface of the cylinder or the outer circumferential surface of the rotating cylinder forms an annular path connected to the opening, wherein the rotating cylinder forms an axial direction path extending in the axial direction, the axial end portion and the annular path Connected, the other end is connected to the above-mentioned 7 medium or refrigerant path (refer to FIG. 87 and the like). In the monthly return cooling, the sealing groove facing the ring shape is accommodated in the escaping groove (see Fig. 88 and the like). By means of the cross-section of the opening, the cooling fluid passes through the gap between the outer peripheral surfaces of the rotating cylinder of the fixed cylinder, and enters the above-mentioned annular denseness=the above-mentioned rotating body is applied to the filling and sealing of the enlarged section n-shape. In the case of the ditch, the flow causes the packing sheet to abut against the inner circumferential surface of the annular sealing groove: the sealing can be sealed to prevent leakage of the cooling fluid. ° It is possible to obtain the density. The terminal is formed on the installation surface "' for vacuum suction (see Fig. 87, etc.). The opening 107857.doc • 32 - 1284369 allows for the sorption of the substrate. In the middle of the inner circumferential surface of the fixed cylinder or the front side of the annular path, the annular path is formed by the above-mentioned action, and the flow path of the suction is required to describe the outer circumferential surface of the rotating cylinder. It is preferable that each of the sealing grooves accommodates a packing sheet having a cross-sectional shape which is opened toward the side opposite to the annular path (see FIG. 88 and the like).

The negative pressure of the flow path for absorbing is used to pass through the inner circumferential surface of the fixed cylinder to "recognize the gap between the outer circumferential surfaces of the rotating drum to achieve the annular seal", and the negative pressure acts on the cross-sectional gate shape (4) of the dense piece, so that the packing and the packing piece abut against the inner circumference of the annular sealing groove, and the inner side of the rotating cylinder should be accommodated with a gasket rotating shaft connected to the center gasket. It is also possible to advance and retreat in the axial direction via the cymbal shaft. It is also possible to rotate the center shims by the cymbal shaft. The yoke shaft should be inserted into the shimming mechanism for advancing and retracting the center cymbal, and the center 塾Part or all of the rotating mechanism of the rotating pad; the absorbing groove of the absorbing substrate is also formed on the central cymbal, and the suction path of the absorbing groove of the central cymbal may be connected to the shimming shaft of the pad The discharge direction of the outer peripheral portion of the substrate, such as a spray of a reactive gas for removing an unnecessary substance, may be directed toward the substrate β of the wafer or the like (the tangential direction of the processed position) (see the figure). 4] ~ graphic, etc.) Also: constitute the periphery of the substrate The direction in which the nozzle of the reactive gas supply means of the apparatus is in the exit direction of the nozzle is substantially in the circumferential direction of the annular surface (the tangential direction of the processed position) in the vicinity of the annular surface where the outer peripheral portion of the substrate is located, I07857.doc -33- 1284369 Configuration (refer to Figure 4), etc.).

Thereby, the reactive gas can flow along the periphery of the substrate, and the time during which the reaction gas contacts the outer periphery of the substrate can be prolonged, and the reaction efficiency can be improved. ^ In the case where the unnecessary material on the back side of the wafer is mainly removed, the discharge nozzle must be disposed on the back side of the annular surface (and thus on the back side of the wafer) (see Fig. 42, etc.). Further, the distal end portion (four) of the discharge nozzle is inclined inward in the radial direction of the stomach forward surface (see Fig. 45 (seven) and the like). Thereby, the reactive gas can be prevented from spreading to the surface side of the substrate, and the surface side can be prevented from being damaged. The end portion (discharge shaft) of the discharge nozzle should be inclined toward the annular surface from the front side or the back side of the annular surface (see Fig. 42 and Fig. 8). Thereby, the reactive gas is actually sprayed to the substrate. Tian Ran can also spray the end of the nozzle (discharge axis) thousands of times and the direction of the circumference of the first (the tangential direction). In addition to the above-described discharge (four), the substrate phase treatment apparatus should be further connected to a suction nozzle such as a vacuum pump to attract a nozzle (exhaust nozzle) (see FIG. The suction nozzle is preferably disposed so as to face the discharge nozzle with the position to be processed interposed therebetween (see Fig. 41 and the like). It is preferable that the nozzle is disposed so as to face the nozzle nozzle substantially along the circumferential direction of the annular surface (tangent line 2) (see Fig. 41 and the like). ::M can control the reactive gas D in the manner of the circumferential direction of the substrate, and can surely prevent the reactive gas from reaching the untreated portion. Then, the &amp; a , 喷 spray nozzle is sprayed in the tangential direction and reacted, and the finished Α 虱耝 (reaction by-products such as fine particles) is still along the 107857.doc -34- 1284369 basis. The tangential direction flows out substantially straightly and is sucked by the suction nozzle to discharge oxygen, thereby preventing the accumulation of fine particles on the substrate. + When the discharge nozzle is disposed on the back side of the annular surface, the suction nozzle is disposed on the back side. At this time, the end portion (suction shaft) of the suction nozzle must be inclined toward the annular surface (see FIG. 4 and the like). Thereby, the reactive gas flowing along the substrate can be surely attracted. The tip end portion (suction shaft) of the squirting sound may be straightly oriented toward the circumferential direction of the substrate (tangential direction) so as to form a straight line with the end portion (discharge shaft) of the discharge nozzle. The suction of the end portion of the suction nozzle may be disposed such that the outer side of the annular surface of the outer peripheral surface of the substrate is disposed on the inner side of the annular surface of the annular surface and substantially perpendicular to the discharge axis of the end portion of the discharge nozzle. Axis (see 9, etc.). Therefore, after the reaction is ejected from the ejection nozzle, the processed gas (including the by-products such as fine particles) can be quickly flowed from the substrate to the outside of the radius to be sucked and exhausted, thereby preventing the substrate from being adsorbed. Stacking particles on it. It is preferable that the suction shaft of the suction nozzle end portion is disposed so as to face the annular surface on the side opposite to the side on which the end portion of the discharge nozzle is disposed, with the annular surface on the outer periphery of the substrate to be placed (see FIG. 5). 〇, etc.). In this way, the gas ejected from the ejection nozzle can flow from the surface on the discharge nozzle arrangement side of the outer peripheral surface to the surface on the suction nozzle arrangement side through the end surface, and the film which is unnecessary for the outer end surface of the substrate can be surely removed (see the drawing). 51, etc.). Then, the processed gas (reaction by-product such as fine particles) can be sucked into the suction nozzle to be exhausted, and the accumulation of fine particles on the substrate can be prevented. 107857.doc -35- 1284369 Large caliber. 5 times the caliber. Preferably, the suction nozzle of the suction nozzle is preferably larger than the discharge nozzle by the suction nozzle. The diameter of the suction nozzle is preferably from about 2 to 3 mm. In addition, the mouth should be about 2 to 15 mm. Thereby, it is possible to suppress the diffusion of the gas and the reaction by-product which are completed by the treatment, and it is possible to surely suck the suction port and exhaust the gas. It is necessary to have the rotation of the mouth relative to the relative rotation of the aforementioned substrate (4)

mechanism. In the forward direction of the rotation direction of the substrate, the discharge squib is disposed on the upstream side, and the suction port is disposed on the downstream side (see FIG. 41 and the like). The radiant heater is required to locally illuminate radiant heat between the discharge nozzle and the suction nozzle in the aforementioned annular surface. Thus, the outer peripheral portion of the substrate between the discharge nozzle and the suction nozzle can be heated and brought into contact with the reactive gas. This helps to remove the film having a higher etching rate at a higher temperature (e.g., an organic film such as a photoresist). Since it is locally heated, it is possible to prevent or even suppress heating to a portion where treatment is not required. Further, since it can be heated in a non-contact manner, the generation of fine particles can be surely prevented. The light heater must use a laser heater. When the organic film such as the upper photoresist is removed, the reactive gas is preferably Wu oxygen. The generation of ozone can be obtained by using the royal jelly J. Ozonation benefits can also be used. Oxygen plasma can also be used. When ozone is used, the cold section mechanism must be placed on the spray nozzle at the μ ^ ^ corner. Thereby, the ozone can be maintained at a low temperature and the Yanxian I 纥 纥 纥 〒 〒 〒 〒 〒 〒 〒 〒 〒 〒 〒 〒 〒 〒 〒 〒 The mechanism for ejecting the nozzles forms a cooling path on the protective member of the material spray (4), and the cooling medium is cooled by the cooling water or the like in the cooling path. The cooling medium I07857.doc -36- 1284369 can be used at room temperature. The spray does not hold the member to be made of a good heat conductive material (such as aluminum.) The light radiation is required to be ..., and the local radiation position is biased toward the nozzle outlet side between the nozzles and the suction nozzles (refer to the figure) )Wait). ' By this, the processing points of the outer peripheral portion of the substrate can be immediately _ 卩 加热 于 反应 反应 反应 反应 反应 反应 反应 反应 反应 反应 反应 反应 反应 反应 反应 反应 反应 反应 反应 反应 反应 反应 反应 反应 反应 反应 反应 反应 反应 反应 反应 反应 反应 反应 反应 反应 反应 反应 反应 反应 反应 反应Maintaining high temperatures can further improve processing efficiency. The direction of the substrate may also be reversed. At this time, the local radiation position of the radiant heater can be made to be biased toward the suction nozzle side between the nozzle discharge nozzle and the suction nozzle. As described in the distance between the discharge nozzle and the suction spray, it is preferable to appropriately set the rotation speed of the rotary mechanism and the heating ability of the radiation addition. It is also possible to introduce a reactive gas for removing the undesired material into the outer peripheral portion of the substrate, and then guide the circumferential path along the guide path extending along the outer circumference of the substrate. Therefore, the unnecessary material covering the outer peripheral portion of the substrate such as the wafer or the like may be removed. The reactive gas supply portion of the substrate (4) processing device may be provided with a gas guiding member, and the L bottle 仏 亥 气体 gas guiding member may include the name 匕 3 The guide path extending in the circumferential direction of the outer peripheral portion of the substrate is extended to pass the aforementioned reactivity in the direction in which the guide path extends (see FIGS. 81 to 83, 91 to 94, and the like). By this, the activity of the active species to the periphery of the substrate can be prolonged, and the reaction efficiency of 107857.doc -37-1284369 can be improved. In addition, the amount of processing gas required can also be reduced. The gas 51-conducting member can be suitably used as a gas supply nozzle of the second reactive gas supply mechanism, and is suitable for the removal treatment of an inorganic film such as a nitride or a cerium oxide. The gas guiding member is required to have a plug which is insertably inserted into the outer peripheral portion of the substrate, and to expand the bottom end (4) of the inserted population into the aforementioned guiding path. The thickness of the aforementioned insertion opening must be greater than the thickness of the substrate, and the gap between the substrate and the substrate should be as small as possible in the state of the insertion φ. The population of the reactive gas is connected to the end of the guiding path in the extending direction, and the other end is connected to the discharge port (see the figure, etc.). Thereby, the reactive gas can be circulated from one end of the guiding path to the other end. It is necessary to adjust a rotational speed to adjust a rotational mechanism for relatively rotating the gas guiding member in the circumferential direction of the substrate. Thereby, the unnecessary substance can be uniformly removed over the entire circumference of the outer peripheral portion of the substrate, and the processing width of the unnecessary material can be adjusted by adjusting the rotation speed, and the width of the texture should be 1 rPm~〗 〇〇〇 rpm The range is more preferably 1 〇 ~ 300 rpm range. A rotation speed exceeding 1 rpm will cause the reactive gas to come into contact with the portion to be treated for a short period of time, which is not preferable. "Month" indicates that the direction of gas flow in the guiding path coincides with the rotation of the substrate. "Also, the illuminating portion of the light-incident actuator may be disposed inside or near the guiding path. ... The illuminating unit is attached to the gas guiding member. The front guiding member may be configured to embed the light transmitting member that transmits the heat rays of the illuminating portion of the 107857.doc - 38 - 1284369 portion (see FIG. 96 and the like) so as to face the guiding path. Thereby, an inorganic film (such as tantalum carbide) to be heated during etching and an organic film such as a photoresist and a polymer may be removed by the gas guiding member. The gas guiding member of the irradiating portion is attached to the base. Stacking on the material · a first inorganic film (such as tantalum carbide) that can be etched at a high m, and a second inorganic film (such as = oxidized stone eve) having an etching rate lower than that of the first inorganic ruthenium at a high temperature It is desirable that only the first inorganic film in the first and second inorganic films of Yushan is effective. The heater should preferably heat the inside of the guiding path (especially the upstream side of the guiding path (the aforementioned population side)) The outer periphery of the base portion or the base than the guide path in an outer side of the rotational direction upstream circumferential portion (see FIG. 95, etc.).

The direction of the gas flow in the guide path and the direction of rotation of the substrate should preferably be in the vicinity of the upstream end of the guide path pinch (see Fig. 95, etc.). Thereby, it is possible to lightly heat the substrate outside the upstream end of the guiding path, and it can cause the reverse reaction with the fresh reactive gas, and then rotate by the downstream side of the guiding path, and temporarily hold In addition, in addition to the portion on the upstream side of the guiding path, the middle portion of the crucible and the portion on the downstream side may also cause a reaction by the eight-filled knife. Thereby, the embedding efficiency can be surely improved. When the residue is a film component which produces solid by-products at normal temperature, it is also possible that the heater is locally heated to the substrate on the downstream side of the guide path in the direction of the suspected turn. The residue can be vaporized and removed from the outer periphery of the substrate. When the yttrium is etched, a solid by-product of (NH4)2SiF6, NH4F, HF or the like is generated, which can be gasified by the heater. And 107857.doc •39-!284369 is removed. In addition to the gas element of the (IV)-reactive gas supply mechanism, the organic gas as the first reactive gas supply means: the processing head for removal, the organic medium Remove the treatment head The method may include: irradiating the second portion of the substrate to the radiant heat to the outer peripheral portion of the substrate; and supplying the first portion of the gas to the portion, the purely reactive oxygen gas reactive with the organic film to the local portion (Refer to Fig. 79 and the like.) The organic film removal treatment and the gas guiding member may be disposed apart from each other in the circumferential direction of the stage. The irradiation unit of the organic film removal processing head may be treated by the treatment of the gas guiding member. The solid by-product is heated and removed by vaporization. As described above, a portion of the outer peripheral portion of the circular wafer is formed with a notch portion such as an orientation flat surface and a groove. Therefore, the round circle can be disposed on the stage. , the rotation of the stage in the n-axis of the rotating shaft and the supply of the processing fluid (reactive gas) toward the first axis of the 'five square', the outer circumference of the wafer, When the traversing ground (10) is rotated with the stalk or the temporary change, the feed nozzle is slid along the first axis to supply the processing fluid (see FIG. 99 and the like). Round centering configuration On the stage, the stage is rotated around the rotating shaft: and the first axis orthogonal to the rotating shaft is used to pass the processing fluid (reactive gas) when the circular outer peripheral portion of the wafer passes The more the point of the supply nozzle is, that is, the self-rotating axis is substantially equidistant from the radius of the wafer: the position on the axis is stationary, and for the aforementioned first axis, the notch of the wafer is the same as the time The change of the traversing point causes the supply nozzle to slide along the 107857.doc ^284369=the first axis and always supply the processing flow substrate to the traversing point. The peripheral processing device may further comprise: Rotating around the axis of rotation; the first axis of the geo-fluid (reactive gas) for the axis of rotation is slidably disposed and the pair of the first-axis, the wafer When the outer peripheral portion == point changes continuously or temporarily with the above-described rotation, the position of the supply (four) is adjusted to the fourth (4), and the position of the tooth is always directed (see FIG. 99 and the like). The substrate peripheral processing apparatus may further include a stage that rotates around the rotating shaft (central axis), and the alignment mechanism 'will be a notch portion of the m-plane and the groove of the circular outer peripheral portion. The wafer is aligned/disposed to the front of the processing stage; the supply nozzle of the rational fluid (reactive gas) is slidably slidably aligned with the first axis orthogonal to the rotating shaft And, the shape of the two nozzles: = structure, which is for the aforementioned first axis, the circular rotation of the wafer, the supply nozzle is substantially equidistant from the radius of the wafer toward the traversing point thereof When leaving, the static _lL, the location of the gestation point, the crossing point of the moving circle, and the crossing of the moving circle, cooperate with: the sliding of the supply nozzle along the first axis, σ,, ',, toward the tooth (see the figure) 97~Fig. 99, etc.). The first reactive medium of the reactive gas supply mechanism may have a ... -Ji, a supply nozzle capable of moving along a reactive gas with the first stage of the stage, 107857.doc -41 - !284369 Arranged on the stage, the stage is rotated around the central axis, and when the circular outer peripheral portion of the first axis 'the wafer passes, the end portion of the supply nozzle faces from the central axis And the position on the first axis that is substantially equidistant from the radius of the wafer is stationary. When the notch portion of the wafer is crossed, the end portion of the supply port always faces the passing point. The supply nozzle _ 〃 the rotation of the stage is synchronously slid along the first drawing (see FIGS. 97 to 99 and the like). The alignment mechanism is required to have a notch detecting portion ??? for detecting the position of the notch portion of the wafer, and to face the predetermined direction of the stage with the missing σ portion in parallel with the front center. = The position of the nozzle (4) __ The rotation of the above-mentioned stage is synchronously performed. That is, when the cutting table corresponds to the range of the rotation angle during the crossing of the first axis of the circular outer core, the supply nozzle is fixed: the first to the second is: the self-rotating axis is substantially equidistant from the radius of the wafer: In the case of the rotation of the first-axis crossing period corresponding to the notch portion, the supply nozzle is caused to approach the rotation axis according to the rotation angle and the rotation speed direction of the stage, =! Stay away from the 6th. The result of the synchronization control is then such that the supply nozzle is always traversed toward the first axis of the wafer. In addition, the aligning mechanism and the n. ding pair time, in addition to the cost of the alignment mechanism π, in addition, also from the position of the alignment to the rotating stage, == Bu, alignment (four) degrees In the case of material (4), the action of f is indeed 'the wafer can also be placed on the stage, so that the stage rotates around the rotary pumping (center J07857.doc -42 - 1284369 spindle), 廿naa turns and handles The supply nozzle of the fluid (reactive gas) is changed toward the position of the outer circumference of the first-axis wafer orthogonal to the "axis", and the traversing point is changed by the rotation. The first axis of the supply nozzles σ and 贳 is slid, and the processing fluid is supplied (see FIG. 1 〇 5 and the like). It is preferable to arrange the wafer on both the carrier and the carrier to rotate the carrier. The axis (rotation around the center, and by calculating the first axis orthogonal to the rotation axis, the position of each time when the outer periphery of the wafer passes through, the supply nozzle of the processing fluid (reverse gas) is based on The above calculation results, along the first axis = set ' and always toward the aforementioned crossing Point, to supply the front view 105, etc.) H body (parameter: this I's slightly eccentricity correction alignment mechanism, can simplify the device processing time. In the name of the alignment inserted 'can therefore shorten At the moment of the whole, the above-mentioned crossing point is calculated to combine the position of the supply nozzle and the supply of the processing fluid. When the position of the outer peripheral portion of the wafer is measured from the side in the direction of rotation of the stage, After the above-mentioned calculation, the position adjustment and processing fluid of the 〒k may be performed after the above-mentioned traversing point is performed on the entire circumference of the outer circumference of the wafer. The base material peripheral processing device may also be provided with a carrier that is configured to arrange the wafer and rotate around it; on the circumference of the condensation axis (central axis) 07857.doc -43- I284369 The first axis orthogonal to the supply nozzle rotation axis of the processing fluid (reactive gas) is slidably disposed; and the outer peripheral portion of the wafer is calculated by the calculation portion, which is calculated for the first axis, The location of each moment; and the position of the nozzle Mechanism, which according to the calculation based | μ red fruit, the process proceeds to the position of the supply nozzle along the first axis of the fluid straight-five weeks ^ whole, while the always toward the crossing point (see FIG. 103~ 105, etc.).

The reactive gas supply mechanism may further include a supply nozzle for a reactive gas slidable along a first axis orthogonal to a central axis of the stage, wherein the stage holds the wafer and is at the center The rotation of the periphery of the shaft further includes a calculation unit that calculates a position at each time point when the outer circumference of the wafer passes through the first axis orthogonal to the central axis, and the supply nozzle of the processing fluid is based on the calculation result. The positional adjustment is performed by the first axis, and the processing fluid is always supplied toward the passing point (see FIGS. 103 to 105 and the like). The calculation unit must include a wafer peripheral position measuring device for measuring the position of the outer periphery of the wafer. (Effects of the Invention) According to the present invention, by heating the outer peripheral portion of the substrate and spraying the reactive gas on the outer peripheral portion of the heating, the unnecessary substance can be effectively removed. By providing a heat absorbing mechanism on the stage, heat is transferred from the outer peripheral portion to the inner portion of the outer peripheral portion of the substrate, and in the case where the heater is directly applied, the heat absorbing mechanism can absorb heat. Thereby, deterioration of the film and wiring from the inner peripheral portion of the substrate can be prevented. Further, even if the reactive gas flows from the peripheral side of the substrate, 107857.doc - 44 - 1284369, the reaction can be suppressed. Thereby, it is possible to prevent damage to the inner side portion of the outer periphery of the substrate. [Embodiment] An embodiment of the present invention will be described in detail with reference to the drawings. 1 to 3 show a first embodiment of the present invention. First, the substrate to be processed will be described. As shown by the hypothetical line in Figs. 1 and 2, the substrate is half-shaped, rounded and formed into a circular thin plate shape. As shown in Figure 3, on the wafer 9 〇

The upper side, that is, the side of the watch, covers the film 92 containing the photoresist. The absorption wavelength of the photoresist is 15 〇〇 nm to 2 〇 00 nm. The film 92 covers not only the entire upper surface of the wafer 90 but also the outer end surface and the outer peripheral portion of the back surface. In the substrate outer peripheral portion of the embodiment, the film Me of the outer peripheral portion of the back surface of the wafer 9 is removed as an unnecessary substance. Further, the present invention is not limited to the case of removing the film on the outer peripheral portion of the wafer transfer base (four) surface, and may be applied to a film which removes the outer peripheral portion and the outer end surface of the front side surface. As shown in FIG. 1 and FIG. 2, the substrate peripheral processing apparatus includes a frame 50, a stage 1G as a substrate support structure, a radiant heater second field heater 20, and a reactive gas. The plasma spray head frame 50 of the supply mechanism has a cylindrical disk-shaped bottom wall 52 which is formed by a hole-shaped disc-shaped bottom plate, and has a cross-shaped l-shaped ring. On the stand not shown on the map. On the inner side of the frame 50, surrounded by the stage, the frame μ frame 50 is arranged concentrically, and is formed to be wider than the peripheral wall 5 口 1 〇 and let the tens of sides observe the circular shape, and the side surface of the circumference is formed with a downwardly tapered shape. . Dai- ^ ^ does not show the rotary drive mechanism of 107857.doc -45- 1284369 on the figure, which can rotate around the central axis n. Alternatively, the solid load σ 10 may be formed, and the rotary drive mechanism may be coupled to the frame M, and the frame 50 may be rotated. On the upper surface 10a (the side of the support surface, the side surface) of the stage 10, the wafer to be processed is placed horizontally and uniformly. A vacuum or electrostatic suction chuck mechanism is inserted into the stage 10. By

The suction chuck mechanism can suck (4) the wafer 9G on the support surface 10a of the stage 1G, but the drawings are omitted. The diameter of the support surface i0a supporting the wafer 9A on the upper surface of the stage 10 is slightly smaller than the diameter of the IB 9G on the day of the circle. Due to the force, the wafer % is placed on the stage 10, and the outer circumference of the outer peripheral portion protrudes from the stage in the micro-diameter direction. That is, the outer periphery of the wafer 90 is located on the annular surface C of the periphery of the dummy package. The amount of protrusion of the outer peripheral portion of the wafer 90 (the annular surface Η Η is 35 mm. Thereby, the back surface of the wafer 9 , is exposed (open) all over the circumference: the narrow portion is 'other' than the inner portion thereof That is, most of the back surface of the narrow outer peripheral portion is abutted against the upper surface of the carrier (4) and covered. The outer peripheral portion of the back surface of the wafer 90 disposed on the stage H), that is, the position of the processed portion is processed. Location p. The processed position 卩 is located on a hypothetical surface (elongated surface) that extends the upper surface 10a of the stage 10 outward in the radial direction. σ The port of the material 10 is excellent in thermal conductivity and does not cause metal contamination, such as use. In order to ensure the corrosion resistance of the reactive gas, an oxidized ingot layer formed by anodization may be provided on the surface, and the so-called soot 10a may be suctioned on the stage 10 of the substrate peripheral processing apparatus. The heat absorption mechanism from 107857.doc -46* 1284369 above. Specifically, the inside of the stage 1G is hollow, and a refrigerant chamber 41 (heat absorption mechanism) is formed. The refrigerant chamber 41 has a sufficient "compartment chamber" to reach the entire area of the stage 10 (the entire circumference and the direction of the circumferential direction: the full tenth. In the refrigerant chamber 41, the refrigerant supply path 42 and the refrigerant discharge: the diameter two: the connection. The paths 42 and 43 extend from the inside of the central axis u. The upstream end of the refrigerant supply path 42 is connected to a refrigerant supply source (not shown). The refrigerant supply source supplies water such as water as a refrigerant via the refrigerant supply path 42.

Give it to the refrigerant room. Thereby, the inside of the refrigerant chamber 41 is filled with water. The water temperature may be two at a normal temperature. Further, it is discharged from the refrigerant discharge path 43 and supplied from the new refrigerant supply path 42. The discharged refrigerant can also be returned to the refrigerant supply source and re-circulated for further cooling. In addition to water, the refrigerant can also be used with air and helium. It is also possible to form a compressed vapor forcibly feeding into the refrigerant chamber 41 to flow inside the refrigerant chamber 41. The heat absorbing mechanism may be provided on at least the outer peripheral portion of the stage 1 (the inner side of the outer peripheral protruding portion of the wafer 9 ,), or may not be provided at the central portion. The stage 10 is located above the bottom plate 51 of the frame 5, and It is located at a substantially intermediate height of the peripheral wall 52. The diameter of the stage 1 is larger than the inner circumference of the bottom plate 51. Thereby, the inner end edge of the bottom plate 51 enters the radial inner side of the lower side (back side) of the stage 1 。. A labyrinth seal 6 is provided between the lower surface of the bottom plate 10 and the inner end edge of the bottom plate 51. The labyrinth seal 60 has a pair of upper and lower labyrinth rings 61, 62. The upper labyrinth ring 61 has a plurality of concentricities with the stage 10. The plurality of hanging pieces 61a of the ring shape are fixed to the lower surface of the stage 10. The lower side labyrinth ring 62 has a plurality of protruding pieces 62a' which are formed in a plurality of rings concentric with the frame 50 and the stage 1A, and are fixed to The bottom plate 51 of the frame 5 is formed. The upper and lower labyrinth rings, the hanging pieces 61a and the protruding pieces 62a of the 107857.doc -47- 1284369 62 are respectively engaged with each other. The frame 50, the stage 10 and the labyrinth seal 60 are formed. The annular space 50a ° is formed on the bottom plate 51 of the frame 50. The suction path 5 1 c of the valley portion of the ring 62 is connected to the suction and exhaust device (not shown) including a vacuum pump and an exhaust gas treatment system via a pipe. These suction paths 51c, The piping and the suction and exhaust device constitute a "suction mechanism for the annular space". The portion of the bottom plate 51 of the frame 50 that is outside the labyrinth ring 62 in the radial direction is separated from the outer periphery of the stage 10 and is mounted with a laser. The irradiation unit 22 (irradiation unit) of the heater 2 is used. The laser heater 20 has a laser light source 21 of a point light source, and the above-described irradiation unit 22 optically connected to the laser light source 21 via a fiber optic cable system. The laser light source 2 1 uses an LD (semiconductor) laser light source to emit a laser beam (thermal light) having an illuminating wave Φ of 808 nm to 940 nm. The wavelength of the light can also be set in a range corresponding to the absorption wavelength of the photoresist 92 covering the wafer 90. The laser light source 21 is not limited to the LD, and various forms such as YAG and excimer may be used. As far as possible, the visible light whose laser wavelength is easily absorbed by the film 92 is used. It is more preferable to use the absorption wavelength of the film 92. The light source 21 can also be housed inside the unit 22, and the optical transmission system 23 such as an optical fiber can be omitted. The laser beam unit 2 2 is considerably larger than the plasma head 3 对 from the processed position p as described. As shown in Fig. 2, the laser irradiation unit 22 is provided in the frame 50 and the stage j 〇 107857.doc -48 - 1284369 in a plurality of intervals (three in the drawing) at equal intervals in the circumferential direction. The laser irradiation unit 22 is disposed on a line L1 orthogonal to the above-mentioned = long surface by the above-described processed position p. The laser irradiation direction of the f-irradiation unit 22 is directed upward along the line L1, and is orthogonal to the outer periphery of the wafer 90 to be processed, i.e., the wafer 90 is placed on the stage. The optical member accommodating a convex lens, a cylindrical lens or the like in the laser irradiation unit 22 is as shown in Fig. 3, and the laser light L from the light source 21 is directed toward the processed position. That is, the outer peripheral portion of the back surface of the wafer 9 provided on the stage 10 is bundled. Further, a focus adjustment mechanism is inserted into the laser irradiation unit 22. With the focus adjustment mechanism, in addition to making the focus of the laser exactly aligned with the processed position p, the processed position P can be shifted up and down a little. Thereby, the area of the light collecting path on the outer peripheral portion of the wafer 90 and the area to be heated, and the density of the radiant energy and the heating temperature of the heated portion can be adjusted. The focus adjustment mechanism includes a slide mechanism that causes the cluster lens in the laser irradiation unit 22 to slide in the optical axis direction. The focus adjustment mechanism may also be such that the entire laser irradiation unit slides in the optical axis direction. The optical transmission system 23 and the irradiation unit 22 constitute an "optical system" in which the heat source from the light source is not diverged near the position to be processed and is transmitted toward the processed position. As shown in FIG. 1, a plasma spray head 3 is mounted on the peripheral wall 52 of the frame 50. The electropolymerizing heads 30 are disposed on the outer side in the radial direction of the stage 1A with respect to the to-be-processed position P, and are disposed in a direction different from the position to be processed p of the laser irradiation unit 22. As shown in Fig. 2, the plasma spray heads 30 are equally spaced from each other in the circumferential direction of the stage 10, and are provided in the same number as the laser irradiation unit 22 (three in the figure). Further, it is disposed in the same circumferential position as the laser irradiation 107857.doc -49 - 1284369 7L 22 or in the pair of the laser irradiation unit 22 on the downstream side of the crystal. Turning the right direction The electric t-head 30 forms a columnar shape with a fine section of each segment, and the axis is arranged horizontally so as to follow the radial direction of the stage 10. As shown in Fig. i, a pair of electrodes 31, 32 are housed in the electro-convergence head 30. These electrodes 3, ^ are formed in a double ring shape, and form a space 3?a which forms a ring-shaped atmospheric pressure therebetween. The opposite surface of at least one of the electrodes 31, 32 is covered with a solid dielectric = film 0. • A power supply (electric field application mechanism) not shown in the figure is connected to the inner electrode 3 1 , and the outer electrode 32 is grounded. The above power source is electromigrated to the electrode 31 as an output pulse. The pulse rise time and/or fall time must be (7) 叩 or less, and the electric field strength of the interelectrode space 30a must be 1 〇 to 1 〇〇〇 kv/cm, and the frequency must be 〇·5 kHz or more. Further, in addition to the pulse voltage, a continuous wavy voltage or the like of a sine wave or the like can be output. A processing gas supply source (not shown) is connected to the base end portion (upper end) facing the side opposite to the stage 10 side of the interelectrode space 30a. The processing gas is supplied to Luyuan, and the processing gas such as oxygen is stored, and is supplied to the electrode in an appropriate amount successively as shown in FIG. 3, and a circular plate is formed at the end portion of the stage toward the plasma nozzle 3 The nozzle made of a resin of a shape forms a member Μ. A discharge port is formed in a central portion of the culture outlet forming member 33. The discharge port bird is connected to the downstream end of the load (four) side facing the interelectrode space 3Ga, and the axis is oriented horizontally along the radial direction of the stage H), and is even higher than the extension surface of the upper surface of the stage 1 It is slightly lower in height and opens at the end of the electrospray nozzle 30. The end of the electric nozzle 3 and the discharge port gauge are disposed near the processed position 107857.doc • 50-1284369, and the wafer 90 is placed on the stage 10 so as to be close to the outer edge. A reactive gas G that plasma-treats the processing gas is sprayed along the axis of the discharge port 30b. This ejection direction is orthogonal to the irradiation direction of the laser light 1 of the laser heater 2 (forming an angle). The intersection of the ejection direction and the irradiation direction is substantially on the back surface of the protruding outer peripheral portion of the wafer 90 on the stage 10. On the end surface of the plasma spray head 30, a suction port 3〇c is formed between the end surface forming member 34 and the discharge port forming member 33. The suction port 3〇c is formed in a ring shape so as to surround the discharge port 3讣. As shown in Fig. 1, the suction port 3〇c is connected to the suction and exhaust device (not shown) via the suction path 3〇d formed in the plasma discharge head 3〇. These suction ports 3〇c, the suction path and the suction and exhaust device constitute a "suction mechanism near the discharge port" and even constitute a "suction mechanism for the annular space". The normal-electrode slurry processing apparatus is constituted by the plasma discharge head 30, the above-mentioned power source, the above-mentioned processing gas supply source, and the above-described suction and exhaust device. A method of removing the film 92c of the outer peripheral portion of the wafer 9 from the back surface of the wafer 9 by the substrate peripheral processing apparatus of the above configuration will be described. The wafer to be processed is transported by a robot or the like, and is placed on the stage 10 in a center-conforming manner to be sucked and held. The entire circumference of the outer circumference of the wafer 9 is protruded outward in the radial direction of the stage 10. On the back surface of the protruding outer peripheral portion of the wafer 90, that is, the processed position p is substantially focused, and the laser beam is emitted from the laser heater unit 22 to emit the laser light L. Thereby, the film 92c on the back side of the wafer 9 can be spot-shaped (partially) radiantly heated. Since the dots are concentrated, the laser energy can be imparted to the irradiated portion at a high density (when the wavelength of the laser corresponds to the absorption wavelength of the film, the absorption efficiency of the laser energy can be further improved). Thereby, 107857.doc 51 1284369 can instantaneously south-temperature the irradiated portion of the film 92c to several hundred degrees (e.g., goo °C). Since it is radiantly heated, it is not necessary to bring the heated portion of the wafer 90 into contact with the heating source, and no microparticles are generated. At the same time, a processing gas (oxygen or the like) is supplied from the processing gas supply source to the interelectrode space 3 〇a of the plasma jet 30. A pulse electric field is applied to the interelectrode space 30a from the pulse power supply pulse voltage to the electrode 31. Thereby, a normal-pressure glow discharge plasma is formed in the interelectrode space 30a, and a reactive gas such as ozone and oxygen radicals is formed from a processing gas such as oxygen. This reactive gas is ejected from the ejection port 3〇b, and is ejected to the locally heated portion of the back surface of the wafer 9 to cause a reaction. Thereby, the film 92c at the portion can be etched and removed. Since the part is locally sufficiently heated, the surname rate can be sufficiently increased. Further, by the φ attraction mechanism, the milk around the site where the etching process is performed is sucked into the suction body by 3 Ge, and is exhausted through the suction path. Therefore, the processed reactive gas can be quickly eliminated from the periphery of the portion where the rice processing is performed.

And ♦ the insults of the insects must be, the object, and k is the etch rate. It also prevents gas from flowing into the side of the circle 90. The self-crystal 2 is guided by the above-mentioned suction mechanism to the periphery of the outer peripheral portion of the processed reactive gas, to the labyrinth seal 6 , direction, and the gas can be sealed from the labyrinth seal 6 〇: The reactive flyout flows out of the seal 60 in the radial direction. At the same time as the above operation, the north side of the wafer 90 can be rotated by the side turn driving mechanism. By the progress, the removal range of the film 92c in the circumferential portion is further removed in the circumferential direction and the film 92c on the outer peripheral portion of the back surface can be removed all the way. 107857.doc -52- 1284369 The seal between the carrier 10 and the frame * 5G can be smoothly performed without the friction of the frame 5G by using the labyrinth (4) (9). In addition, with the above-mentioned teachings, ",, know, may be heated parts of the wafer 90

The heat is transferred to the wafer 90. The heat is transferred to the opposite side of the wafer 10 by the contact surface of the wafer 90 and the stage 10, and the heat is absorbed by the ruler filled in the refrigerant chamber 41, thereby suppressing the inner portion of the heated portion of the wafer 90. The temperature rises. Therefore, the film 92 in the inner portion of the wafer 9 can be suppressed from deteriorating by the ’. Even if the reactive gas flows into the center side of the upper surface of the wafer 90, the reaction with the film 92 can be suppressed. Thereby, the film 92 can be prevented from being damaged, and the quality can be surely maintained. Since the amount of water stored in the refrigerant chamber 4i is extremely large, the heat absorption capacity can be sufficiently ensured. Further, the heat absorption capability can be further sufficiently maintained by replacing the water in the refrigerant chamber 41 via the supply path 42 and the discharge path 43. Thereby, the temperature rise of the inner portion of the outer peripheral portion of the wafer 9 can be surely suppressed, and the damage of the film 92 can be surely prevented. The inventors used the same apparatus as in FIG. 1 to make the outer edge of the wafer protrude from the load a W by 3 mm, and the temperature of the water in the refrigerant chamber 41 was 5 〇t, 235, and it was 2 5-2 t: The wafer surface temperature at a distance from the vicinity of the heated portion of the outer edge of the wafer to the radially inner side. The laser heater 2〇 ° is as follows. Output bar

Laser emission wavelength: 808 nm Output: 30 W Local heating part diameter: 0.6 mm Output density: 100 w/mm2 107857.doc -53- I284369 Vibration form: continuous wave The result is not as shown in Fig. 4. In the figure (a), the periphery of the heated portion of the outer edge of the wafer (the position slightly separated from the side) is taken as the origin of the horizontal axis, and the figure (b) is the heated portion of the outer edge of the wafer. Next to the origin of the horizontal axis. When the water/dish is 23.5 C of the hanging/dish, near the heated portion of the outer edge of the wafer, the degree of n〇〇c is reached by heat conduction from the heated portion (Fig. 4(a)), and further The side of the heating part reaches 3〇〇〇c (Fig. 4(b)) (in addition, the heated part reaches 600 art or more), but only 3mm from the inside of the radial direction is lowered to 5 (TC) Further, it is confirmed that the central portion of the inner side in the radial direction is kept at 50 ° C or lower, and it is confirmed that even if the ozone of the reactive gas flows to the central portion of the side surface of the wafer surface, the reaction is less likely to occur, and the damage of the film 92 can be suppressed. Further, the inventors used the same apparatus as in Fig. 1 so that the outer edge of the wafer protrudes from the stage 10 by 3 mm, and when the laser output is 80 W and 1 〇〇 W, the infrared imager (thermography) The surface temperature of the wafer is measured from the distance from the outer edge of the wafer to the inner side in the radial direction. The other conditions are as follows. Wafer diameter: 300 mm diameter of the local heating part · 1 mm Number·· 3 rpm The temperature of the water in the chamber of the stage··············· As shown in Fig. 5, the surface temperature beside the heated portion of the outer edge of the wafer is about 30 (TC (the degree of heating reaches 700 to 8 〇 (rc degree), but from here to the inside of the radial direction, the wafer temperature The temperature dropped sharply, and it fell by 1 〇〇t in the area of the inner side of 107857.doc -54·1284369 in the direction of the melon. It is confirmed that the damage of the film in the central portion of the wafer can be suppressed. Next, another embodiment of the present invention will be described. In the following embodiments, the structures corresponding to the above-described embodiments are denoted by the same reference numerals, and the description thereof will be appropriately omitted. The stage 10 shown in Fig. 6 and the refrigerant chamber are provided by the horizontal partition 45. The first chamber portion 41U and the lower side (opposite side to the side of the swing surface) isolated from the upper side (the side of the side of the swinging surface) • the second chamber portion 41L of the partition plate 45 is smaller than the inner diameter of the peripheral wall of the stage 10, and is upper and lower The first and second chamber portions 41U are connected to the outer peripheral side of the partition plate 45. The end portion of the tube constituting the refrigerant supply path a is connected to the central portion of the partition plate 45, and the refrigerant supply path 42 is connected to the upper side. Room part 4iu. In addition, in the bottom plate of the stage ίο The second portion of the end portion of the tube constituting the refrigerant discharge path 43 is connected to the second chamber portion. The first and second chamber portions 41U are configured to supply the refrigerant as a heat absorbing means from the refrigerant. The path 42 is introduced into the central portion of the first chamber portion 41U on the upper side (the side of the branch surface), and is radially diffused and flows outward in the radial direction. The outer edge of the P-New Zealand (10) 45 enters the lower side (with the alternative surface). On the other hand, the first-chamber part machine of (6) flows to the inner side in the radial direction and is discharged from the middle path 43. 7 Sweeping 曰: This ensures that the entire stage 10 can be surely cooled, and the circle 90' can be surely confirmed. Protecting the film 9 on the top surface and then approaching the first part of the wafer 9_, the endothermic efficiency is improved. In the state of Fig. 6, the refrigerant supply path 42 and the refrigerant discharge path and the 43 are arranged in parallel, but as shown in Fig. 7, 'the inside of the refrigerant discharge path 43 can also pass: the medium supply path 42 And constitute a double tube. ° 7 In the aspect of Fig. 8, a refrigerant passage 46 is provided inside the stage H as a heat absorbing mechanism. The refrigerant passage 46 is formed in a full roll shape. The refrigerant supply path 42 is connected to the end portion on the outer peripheral side of the scroll-shaped refrigerant passage, and the refrigerant discharge path 43 is connected to the end portion on the center side. Thereby, the refrigerant can flow in a spiral shape from the inner circumference side of the refrigerant passage material. Thereby, the side close to the peripheral portion of the wafer can be sufficiently cooled. Therefore, it is possible to surely absorb the flaws from the outer periphery of the wafer 9 to protect the upper film 92. Further, both the refrigerant discharge path (4) on the center side and the refrigerant supply path on the outer circumference side pass through the inside of the center shaft 11 of the stage 10, but the detailed drawings are omitted. The refrigerant supply path 42 is connected to the outer peripheral side end portion of the refrigerant passage 46 by extending the bottom plate of the stage 10 and the door of the refrigerant passage 46 to the outer side in the radial direction from the side of the center shaft 11. In the case where the stage 10 is fixed and the frame 50 is rotated, it is not necessary to pass the refrigerant supply path 42 through the center shaft 1丨. The structure of the ^ ^ ^ ^ L movement from the outer peripheral side of the loading platform 10 is not limited to FIG. 8

The scroll structure. The refrigerant passage as shown in Fig. 9 is a plurality of annular passages 47 仫 47 and a communication passage 48 connecting the annular passages 47. A plurality of communication paths are arranged at intervals in adjacent annular paths. The communication path 48 on the outer side in the direction of the parent side or the like and the diameter =: ΓΓ 48 are disposed apart from each other in the circumferential direction via the one annular path 47. The outermost annular path 47 has a refrigerant supply path 42 at a plurality of positions in the circumferential direction at intervals of 107857.doc - 56 * 1284369. The center is connected to the base end of the refrigerant discharge path 43. As indicated by the arrow, the refrigerant passes along the outer annular path, and after the #-shaped path on the side, it merges in the communication path 48, and is shunted again in the direction of the white in the same direction. The outer circumference of σ 1 0 flows toward the center.

= The stage shown in Figures (4) and (b)! In the same manner, the inside of the crucible refrigerant chamber 41', the cold supply path (10), is connected to the position of the outer peripheral portion of the far refrigerant chamber 4i at intervals of every other interval. The refrigerant discharge path extends from the central portion of the refrigerant chamber 41. Thereby, the refrigerant is introduced into the outer peripheral portion of the refrigerant to the center of 41 and flows toward the center. The refrigerant chamber "constitutes a core-like refrigerant passage. In addition, in FIGS. 6 to 10, the refrigerant supply path "and the refrigerant discharge path technology 43 may be reversed, and the flow of the refrigerant in the upper refrigerant chamber 41U is from the outer peripheral side. Facing the center. The heat absorbing means shown in the form of Fig. uses a heat absorbing element instead of the refrigerant. That is, the stage 10 has a Peltier element pe as a substrate heat absorbing mechanism. The Peltier element Pe has the heat absorption side facing the upper side (the upper side of the stage 1〇1〇a side), and is disposed near the upper surface 1〇a of the stage 10. Thereby, the heat of the wafer 90 can be absorbed via the upper plate of the carrier 10. Further, on the lower side of the Peltier element Pe of the stage 1, a fan, a heat sink, and the like which are required to promote heat dissipation on the heat radiating side of the self-instrument element Pe can be provided. The heat absorbing mechanism of the embodiment of the present invention is provided in substantially all of the region of the stage 10 and absorbs heat from the entire substrate supporting surface 10a. However, as shown in FIGS. 12 and 13 of 107857.doc -57- 1284369, it is also possible to provide only On the outside of the stage 1 。. An annular partition wall 12 is provided concentrically inside the stage. The stage 10 is divided into an outer peripheral area 1 ORa and a central area 1 〇 Rb by the annular partition wall 12. The refrigerant supply path 42 and the refrigerant discharge path 43 are connected to the outer peripheral region 1A Ra outside the annular partition wall 12. Thereby, the refrigerant chamber 41 (heat absorption mechanism) is formed inside the outer peripheral region (7). Further, the central portion 1〇Rb on the inner side of the crotch partition wall 12 does not become the refrigerant chamber ’, and a non-arrangement portion of the heat absorbing mechanism is formed. The outer peripheral portion of the wafer 90 protrudes outward in the radial direction from the outer peripheral region 1 〇Ra of the stage 1〇. The annular portion near the inner side of the protruding portion abuts against the outer peripheral region IGRa of the stage 1 , and is abutted against the central portion of the inner side of the stage 10 〇 Rb. Thereby, the heat from the heated portion of the outer peripheral portion of the wafer 90 is conducted to the portion near the inner side, and the outer peripheral region 10113 absorbs heat. In addition, in the center of the wafer 90 and the heat conduction (four) section, no endothermic cooling is performed. This can be used to obtain a heat source. The heat absorbing mechanism provided only in the outer peripheral region 10Ra of the stage can also be applied to the embodiment shown in Figs. 6 to 11 . As shown by the solid line in Fig. 13, the illumination unit of the laser heater is placed above the wafer 90. Thereby, the front side surface of the wafer 9 () is locally heated, and the reactive gas is supplied from the supply nozzle 3 〇N of the reactive gas supply means, thereby eliminating the unnecessary side surface of the outer peripheral portion of the wafer 90. Hey. On the other hand, as shown by a hypothetical line in Fig. 13, in the case where an unnecessary film of the outer peripheral portion of the wafer 9 is removed, the laser irradiation unit 22 can be disposed below the wafer 9A. , 107857.doc -58- 1284369

As described above, the laser irradiation unit 22 is provided with a focus D positive mechanism. The following processing operations can be performed using the focus adjustment mechanism. In the case of Fig. 14, in general, a notch portion 93 such as a groove is formed in one of the circumferential directions of the outer peripheral portion of the wafer 9. As shown in (4), when the size of the irradiation fiLs on the laser irradiation unit wafer (the width of the irradiation range) is kept constant for two, the edge of the groove 93 may not be processed (the oblique portion of the figure is not processed). Part). Therefore, as shown in the figure (9), when the groove 93 reaches the processed position, the focus of the laser irradiation unit 22 is deviated in the optical axis direction by the focus adjustment mechanism. By this, the irradiation point u can be enlarged, and the edge of the groove % can also illuminate the laser. Therefore, as shown in the figure (4), the film of the groove % can be surely removed. Since the energy density is lowered by expanding the irradiation point Ls0f, it is preferable to "increasing the output of the laser or lowering the rotation speed of the wafer, and adjusting the energy per unit area to the same extent as before the irradiation point Ls is expanded. The irradiation point Ls passes through the concave After the groove 93, the size of the irradiation spot Ls is restored to the original size. Fig. 14 shows the case where the notch portion of the wafer % outer periphery is provided with a groove ,, but when 'the orientation plane is not set _93' is also used The same operation as above (including the energy adjustment operation per unit area) may be performed, and the film may be removed from the edge of the plane. As shown in FIG. 15 and FIG. 16, the processing width adjustment laser irradiation unit 22 may be used. The focus adjustment machine=Fig. 15 does not, the focus adjustment mechanism is used to align the focus from the laser irradiation unit u = laser L to the spot diameter of the irradiation range on the wafer 9 〇 on the periphery of the wafer 9 〇 In the case of a diameter of about i mm, the wafer 107853.doc -59-1284369 film 92c can be removed by about 1 mm wide, and the processing width can be set to i mm. In addition, the same laser irradiation unit 22 is used. Want to get more than the above In the wide case, as shown in Fig. 16, the focus adjustment mechanism 22F moves the focus of the laser light L away from the wafer 90. This increases the spot diameter on the wafer 9 and enlarges the processing width. When the processing width of about 3 mm is obtained, the focus adjustment is performed in such a manner that the irradiation spot diameter on the wafer 90 is about 3 mm. In Fig. 16, the focus of the laser L is adjusted in a manner farther than the wafer 9 However, conversely, the focus may be condensed at a position closer to the wafer 90, and then expanded to the wafer 9 0 0. As shown in FIG. 17, the focus adjustment of the wide laser irradiation unit 22 may be processed. The laser irradiation unit 22 is slid in the radial direction of the stage 1 进而 in the radial direction of the wafer 9 藉 by the radial direction sliding mechanism 22S. The laser irradiation unit 22 and the above _ Similarly, 'the focus is substantially aligned on the outer circumference of the wafer 90, and is set such that the illuminating point on the wafer 9 is about 1 mm.

When the irradiation spot diameter is maintained and a processing width of about 3 mm is achieved, first, as shown by the solid line in FIG. 17, the irradiation point is pinched from the outer edge of the wafer 9 to the position of about 3 positions. The radiation irradiation unit 22 rotates the wafer 90 in the dimension (t) of the wafer, and rotates the wafer 90 to perform the rotation mechanism once, and the illumination unit 2 is moved by the α The same size (about the deviation of the outer diameter direction of the abundance from the irradiation spot diameter (4) mm). At this position, step ^9 (3_ once, and process it. 〇 转 107857.doc 1284369 and then, after one rotation, as shown by the two-point chain line in Figure 17, the illumination will be illuminated by the sliding mechanism 22S ' The unit 22 advances to the outer side of the radius by approximately the same size (4)_) as the irradiation spot diameter. At this position, the wafer 90 is further rotated and processed. Thereby, the processing width can be made to three sides.

Fig. 18 (4) and (b) show that the substrate fixing mechanism is inserted into the carrier opening 10 of the vacuum chuck mechanism. A plurality of suction holes 13 are dispersed and formed on the upper plate of the stage 1 including a good heat conductive metal such as aluminum, and the suction holes 13 are connected to a suction mechanism such as a vacuum pump (not shown) via the suction path 14. The suction hole 13 is formed as small as possible. Thereby, the contact area between the stage 10 and the wafer 90 can be sufficiently ensured. Further, the heat absorption efficiency of the wafer 90 can be sufficiently ensured. Fig. 19 (4) and (b) show the modified form of the vacuum chuck mechanism. A suction groove 15 is formed on the top of the stage ίο in place of the dot-shaped suction hole 13. Sucking the ditch? There are a plurality of annular grooves forming a concentric shape, and a communication groove 17 connecting the annular grooves 16. The communication grooves 17 are provided at equal intervals in the circumferential direction between the adjacent annular grooves 16 at equal intervals. The communication groove 17 on the outer side in the radial direction is disposed so as to be offset from each other in the circumferential direction via the one annular groove 16. The annular groove 16 and the communication (4) are as small as possible. The contact area between the stage 10 and the wafer 9 is ensured, and the heat absorption efficiency of the wafer 90 is sufficiently ensured. Fig. 2A and Fig. 21 show the modification of the suction groove. The connection groove 17 of the suction groove 15 is the most The inner annular groove 16 passes through the annular groove 16 in the middle to the outermost annular ring (four), and the radial direction of the money (four) is straightly extended and arranged at a circumferential interval of 90 degrees.

As shown in Fig. 21, an annular cooling chamber 41C 107857.d〇i • 61 - I284369 is formed inside the stage 10 as a heat absorbing mechanism. The annular cooling chamber 41C is disposed concentrically with the stage 10 on the outer peripheral portion of the stage 10A. The refrigerant supply path 42 is connected to one of the circumferential directions of the annular cooling chamber 41C, and the refrigerant discharge path 43 is connected to the opposite side of the 180 degree, but the drawings are omitted. 18 to 21, the chuck mechanism is provided on substantially the entire area of the upper surface of the stage 1'. However, in the embodiment shown in Figs. 22 and 23, the chuck mechanism is provided only on the outer peripheral side of the upper surface of the stage 10. . An annular convex portion 101) is formed on the outer peripheral side of the stage 10 on the outer peripheral side. Corresponding to the ', a shallow concave portion 1〇〇 which is circular in plan view is formed in the central portion of the stage 10. On the flat upper surface of the annular convex portion 10b of the stage 10, a plurality of (e.g., three) annular grooves 16 are formed concentrically, and the annular grooves 16 are connected by the communication grooves 17. In the inside of the stage 10, an annular cooling chamber 41C is provided in the same manner as in the above-described FIG. 19, and only the upper surface of the annular convex portion 10b on the outer peripheral side of the stage 10 is in contact with the back surface of the wafer 9〇, and the wafer is sucked. 9〇. A recess 1 形成 is formed in the central portion of the stage 1 . 'Therefore, it is not in contact with the wafer 90. Thereby, the contact area between the stage 10 and the wafer 90 can be minimized, and the micro-protrusion 1 0 b generated by the accompanying contact can be reduced by the J Luo Zhuang, the human X 1 field-like cold chamber. 41C cooling. In addition, it is in contact with the annular convex portion 1 Ob in the wafer 9〇. P The file is the near inner part of the illuminated position of the protruding portion of the outer circumference. Tian &amp; _ This, the heat of laser irradiation from the exposed position value of the outer peripheral portion of the wafer 90 is transmitted to the inner side, and immediately absorbs heat through the annular convex portion 10b, and the heat does not reach the wafer 90. The function as the heat absorbing mechanism of the stage 10 can be sufficiently ensured. 107857.doc -62 - 1284369 The inventor investigated the relationship between the contact area of the wafer and the stage and the generation of fine particles. The θθ circle used a diameter of 300 mm to attract the stage of the same construction as that of Figs. 2 and 21 ( After the contact area of 678.2 cm2), the number of particles having a diameter of 〇·2 μπι or more is about 22,000. Further, after absorbing the stage (contact area: 392.7 cm2) having the same structure as that of Figs. 22 and 23, the number of fine particles having a diameter of 0.2 μm or more was counted as approximately 54 Å. In this way, it is found that the amount of microparticles generated can be greatly reduced by reducing the contact area.

The substrate peripheral processing apparatus of Fig. 24 is omitted, and the plasma discharge head 3 is separated from the processed portion, and is fixed to the bottom plate 51 of the frame 50 in parallel with the laser irradiation unit 22 of the laser heater 20. The end face of the plasma spray head 3 is oriented directly upward. A peripheral gas wall 52 of the frame 5 is formed with a reactive gas path 52b extending from the end openings 30, b of the plasma spray head 30. The end of the reactive gas path 52b reaches the inner peripheral surface of the peripheral wall 52, and a small cylindrical discharge nozzle 36 is connected thereto. The discharge nozzle 36 constitutes a discharge port forming member, and the inside thereof constitutes a discharge port 36a. The discharge nozzle 36 is composed of a transparent and light transmissive material such as tetrafluoroethylene-purpleoro. The alkylvinylether copolymer (pFA) and the like nozzle 36 extend obliquely upward from the inner periphery of the peripheral wall 52, and the eight end portions are extremely close to the treated position p, that is, at 9. It protrudes from the back side of the outer peripheral portion. Thereby, the direction of the spray toward the vertical direction is sharply formed in the direction of the spray (four) repair, and is turned on the back side of the protruding outer peripheral portion of the a circle 90 (the radiant heater and the position P are on the support surface W). The side of the extension backrest surface is disposed in a direction in which the pair is processed (in the direction in which an acute angle is formed)). 107857.doc -63- 1284369 The frame 50 having the reactive gas path 52b, the discharge nozzle 36, and the plasma head 30 are all constituent elements of the "reactive gas supply means". Since the discharge nozzle 36 is disposed in close proximity to the portion to be processed of the wafer 90, the reactive gas such as ozone ejected therefrom can surely reach the treated portion in a highly active state without being diffused and in a high concentration state, and can be improved. The reaction efficiency with the film 92c can increase the etching rate. Further, since the discharge direction of the reactive gas is not parallel to the back surface of the wafer 9 形成, the reaction efficiency with 臈 92c can be further improved, and the etching rate can be further improved.

Further, although the discharge nozzle 36 is disposed in the optical path from the laser beam L of the laser heater 2, the discharge nozzle 36 is translucent, so that the laser beam L is not blocked. Therefore, it is possible to surely heat the portion to be processed, and it is possible to ensure a high etching rate. Alternatively, the discharge nozzle 36 may be disposed outside the optical path of the laser beam B. In this case, it is not necessary to form the discharge nozzle 36 with a transparent material. For example, stainless steel or the like can be used, high temperature is considered in consideration of laser reflection, and ozone concentration is lowered due to thermal reaction _ ' ' It is composed of Teflon (registered trademark) which is small and has a high ozone. In Fig. 24, a step is formed on the peripheral wall 52 of the bottom plate, and the step is covered. The i surface forms an inverted upper peripheral wall 53 of the inverted L shape. The inner end of the upper peripheral wall 53 and the weir are disposed in the vicinity of the discharge nozzle 36. Further, it is disposed on the outer end of the wafer ▲ on the stage (7), and near the #. The inner peripheral edge of the upper peripheral wall 53 is formed with an annular groove which is enlarged toward the inner end edge of the fourth opening and covers the entire circumference of the circumferential direction _ ( The σ port) the suction path 53d extends from the groove bottom of the annular groove 53c at the same circumferential position as the discharge nozzle %, and extends to the outer periphery of the upper peripheral wall 53 to connect 107857.doc -64 - 1284369 to the connection connection cry 5 7 And the storage chamber η ^ ^ ° ° 7 is further connected to a suction and exhaust device not shown in the drawing, whereby the reactive gas can be exhausted from the periphery of the outer peripheral portion of the wafer 90 to be exhausted. The groove 53c, the suction path 53d and The suction and exhaust device constitutes a "suction mechanism near the discharge port" and even constitutes a "suction mechanism for the annular space." The substrate peripheral processing apparatus shown in Fig. 25 is different in construction of the electric discharge head. That is, the plasma spray head 30X of Fig. 25 is formed in a ring shape corresponding to the size of the stage Φ 10 or even the frame 50, and is disposed concentrically with the upper side of the stage 10 and the frame 50. The plasma nozzle 3 can be largely separated from the stage 10 and the frame 50 by a yak stack structure (the state is not shown), and is disposed on the frame 50. The set position on the peripheral wall 52 (this state is shown in Fig. 25) is raised and lowered. After the plasma discharge head 3 is raised again to the retracted position, the wafer 9 is placed on the stage 10, and then the processing is performed at the position where the plasma head 30 is lowered. Inside the plasma discharge head 30, an electrode 31A, 32A, which covers the entire circumference and which forms a double ring shape, is accommodated. The inner electrode 31 is connected to a pulse power source not shown, and the outer electrode 32 is grounded. By the opposite faces of the electrodes 31 and 32, a narrow space 3〇ax covering the entire circumference of the plasma jet head 30 is formed. A processing gas such as oxygen from a processing gas supply source not shown in the drawing is uniformly introduced in the circumferential direction of the upper end portion (upstream end) of the inter-electrode space 3, and is subjected to atmospheric pressure in the inter-electrode space 30ax. Glow discharge and electricity are generated to generate a reactive gas such as ozone. The surface of at least one of the electrodes 3ΐχ, 32χ covered with the solid dielectric layer is the same as the above-mentioned plasma nozzle 3〇0 l〇7857.do, -65-1284369, the self-electrode is formed at the bottom of the electro-active nozzle The intervening space 3〇a # (downstream end) is obliquely extended by a reactive gas path, χ. A peripheral gas wall 52 of the frame 50 is also formed in the frame y to have a longitudinally extending reactive gas path 52b. The plasma spray head 30X is disposed at a position 罟 „. ^ 直径3〇心52, which can connect two reactive gas paths. The lower end portion (downstream end) of the reactive gas path of the frame wood 5G is connected to the base end portion of the discharge nozzle 36 of the photo-material. The discharge nozzle (10)

The surface of the frame 5 is horizontally embedded in the peripheral wall 52. At the end, P protrudes from the inner end surface of the circumference 52, thereby being located at the processed position p, that is, the crystal placed on the stage 10. The outer circumference of the circle 9 is close to the back side. The discharge nozzles 36 are spaced apart from each other in the circumferential direction so as to correspond to the laser irradiation unit 22 in the same circumferential direction as the laser irradiation unit 22 of the laser heater 2, and are disposed in the same number as the laser irradiation unit 22. Thereby, the reactive gas generated in the interelectrode space X is ejected from the ejection nozzle % through the reactive gas path 3〇b, x, 52b, and is ejected to the film 92c which is locally heated by the laser heater 2 Part of it is removed by etching. Even if the optical path of the laser beam L interferes with the discharge nozzle 36, the discharge nozzle 36 is translucent as in the embodiment of Fig. 24, so that the laser beam L is not blocked. A cover ring 37 is provided at a radially inner portion of the bottom of the plasma spray head 30X. When the plasma jet head 30 is in the set position, a suction port 3〇CX is formed between the end surface of the cover ring 37 which is formed in a tapered shape and the upper side surface of the inner peripheral surface of the peripheral wall 52 of the frame 5〇. The suction port 30cx is located directly above the outer edge of the wafer 90 on the stage 10. The suction port 3〇cx is connected to a suction and exhaust device (not shown) via a suction path 30dx or the like connected to the bottom thereof. Thereby, the reactive gas can be sucked and processed from the periphery of the outer periphery of the wafer 9 〇 107857.doc - 66 - 1284369 to be exhausted. The suction port 3〇cx, the suction path 3 button, and the suction and exhaust device constitute a "suction mechanism near the discharge port" and even constitute a "suction mechanism for the annular space". The cover ring 37 constitutes a suction forming member. The substrate peripheral processing apparatus shown in Fig. 26 is the combination of the entire substrate peripheral processing apparatus of Fig. 24 and the annular plasma head 3 of Fig. 25. Therefore, in the apparatus of Fig. 26, the two types of electrospray nozzles are provided on the lower side and the upper side. The electropolymerizing heads 3 are removed from the outer peripheral portion of the wafer 90-face as in the above-described embodiment. Membrane...user. Further, the upper plasma discharge head 30 is used to remove the film 92 (see Fig. 3) of the outer peripheral and outer end faces of the outer side of the round 90. Therefore, at the bottom of the electropolymerizing head 30 of the substrate peripheral processing apparatus of Fig. 26, unlike the case of Fig. 25, an ejection port 3?bx which is extended straight downward from the space between the electrodes and which is open at the bottom surface is formed.喑 mouth outlet 3〇bx forms the ring of the culvert plasma nozzle throughout the week. When the electric (four) head 30X is in the set position, the discharge port (10) is disposed on the stage 10 just above the outer peripheral portion of the substrate. The reactive gas from the electric discharge space 3〇ax is ejected straight from the ejection outlet, and is ejected to the outer periphery of the side surface of the wafer 90, and partially spreads to the end face of the wafer 9〇. Thereby, the outer peripheral portion of the side surface of the wafer table and the "film 92 of the surface" can be removed. Since the discharge port 3 is formed in a ring shape and covers the entire circumference of the wafer 90, the reactive gas can be sprayed to the wafer 90 at a time. The entire circumference of the outer circumference can be effectively left. In addition, depending on the type of film on the side and back of the wafer, the processing gas composition of the upper and lower electric (4) head 3GX paste can be different. The discharge port 30bx is disposed at the suction port 3〇 In the center of the width direction, the suction port (10), the central (4), the (4) port, the 3Gbx, and the inner peripheral side and the outer peripheral side, respectively, the suction path 107857.doc -67 - 1284369, the diameter of 30 dx from the inner peripheral side of the suction port portion and the outer peripheral side of the suction port The parts are respectively extended and connected to the suction and exhaust device not shown in the figure. The arrangement and relationship between the plasma head 3〇 of the substrate and the laser irradiation unit 22 of the laser heater 20 are shown in the substrate peripheral processing device of Fig. 27. That is, the plasma spray head 30 in the apparatus of Fig. 27 is fixed to the bottom plate 51 of the frame 50 directly toward the end surface and toward the discharge port 30b. The discharge port 3013 is disposed close to the crystal disposed on the stage 10. Round 90 outside the periphery of the circumference, and The reactive gas is ejected in a direction orthogonal to the outer peripheral portion of the back surface of the wafer 9〇φ (disposed on the line orthogonal to the extended surface of the support surface 10a by the processed position P). As shown in FIG. A plate-shaped total reflection member is provided on a side opposite to the stage 10 side of the total reflection member 25 at a portion closer to the side of the stage 1 than the discharge port 3〇b of the end surface of the plasma discharge head 3, and is formed upward. The slope is inclined to the side of the stage. The slope is a total reflection surface 25&amp; of the total reflection laser, etc. Further, the laser irradiation unit 22 is separated from the outer side of the plasma head 3 in the radial direction and is to be a laser. The irradiation direction is directed to the inner side in the radial direction to form a lateral line #线', and is fixed to the peripheral wall 52 of the frame 5 (). The laser beam L emitted from the laser irradiation unit 照射 is irradiated onto the reflection surface 25a, and is reflected obliquely upward, and is irradiated. In the outside of the crystal-back side, the rod can be used to locally heat the outer peripheral portion of the back surface of the wafer 9〇.

The member 34 of the upper end portion of the plasma jet head 30 may be made of a light transmissive material through a laser lens. The laser of the incident unit 22 is not linear, but when it is tapered back toward the reflective surface 4, the plasma nozzle can be lowered, and the part of the total reflection member is increased from the time of the day. To avoid laser interference 107857.doc -68- 1284369 As shown in Figure 27, the upper end of the peripheral wall 52 of the frame (four) is provided along the inner circumference of the king. A %-shaped covering member 80 is formed. The covering member 8A has a horizontal circular plate shape, a horizontal portion 81 in which the peripheral wall 52 extends inward in the radial direction, and a cylindrical lower portion 82 which is suspended from the entire circumference of the inner end edge of the horizontal portion 81, and is formed in a cross section. L shape. The cover member 8A can be moved away from the retracted position (the state is not shown) in the upper portion of the peripheral wall 52 by the elevation and not shown in the figure, and the outer peripheral surface of the horizontal portion 81 abuts against the inner peripheral surface of the peripheral wall 52. Set bit

Set up (this state is shown in Figure 27). When the wafer 9 is placed on the stage ι〇: the cover member 80 is in the retracted position, and the wafer 9 is processed: the cover member 80 is at the set position. In the installation position, the inner edge and the lower portion 82 of the horizontal portion 81 of the cover member 80 are disposed at the processed position p, that is, above the outer peripheral portion of the wafer row on the stage (7), and outside the wafer 90. The part covers the upper part of the annular space 5〇a. A space 50b integrally connected to the annular space 50a is formed between the covering member 80 and the peripheral wall 52. The lower end portion of the lower portion 82 is disposed on the wafer 9's side, and the gap 82a (Fig. 28) between the lower portion 82 and the wafer 90 is very narrow. Thereby, the reactive gas which has been processed to be ejected to the outer peripheral portion of the wafer 90 can be surely inserted into the spaces 50a, 50b, and can be prevented from flowing to the central portion side of the upper surface of the wafer 9. Further, the film 92 on the upper surface can be prevented from being damaged. The space 50b between the covering member 8'' and the peripheral wall 52 is connected to the suction venting means which is not shown in the drawing via the suction connector 55 of the covering member 80 or the like. Thereby, the space 5 〇 a can be sucked, and the process completion gas in the space 5 〇 b is exhausted. The suction connector 55 and the suction and exhaust device constitute a "suction mechanism for the annular space". 0 107857.doc -69 - 1284369 The substrate peripheral processing device of FIG. 29 is not shown, and the reactive gas supply source of the reactive gas supply mechanism is The ozonator 7〇 is used instead of the above-mentioned conventional resilience discharge type plasma nozzle 3〇, 3〇χ. Ozonizer 7〇 Ozone generation methods are not limited, such as silent discharge and creeping discharge. The odor oxidizer 70 is provided to be separated from the frame 50. The ozone supply pipe 71 extends from the ozonator 70, and the ozone supply pipe 71 is connected to the peripheral wall of the busy wood 50 via a supply connector 72 provided on the bottom plate 51 on the outer side in the radial direction of the laser irradiation unit 22 of the frame (9). 52 reactive gas path 52b. Further, the supply connector 72 is disposed in the same circumferential direction as the laser irradiation unit 22, and is disposed at the same time in the circumferential direction at the same time as the laser irradiation unit 22 (for example, five), and the ozone supply is performed. The tubes 71 are branched and connected to the respective supply connectors π. The reactive gas path 52b extends from each of the supply connectors 72. The reactive gas path 52b reaches the inner peripheral surface of the peripheral wall 52, and the light-transmitting discharge nozzle 36 protrudes obliquely upward therefrom, and the discharge nozzle takes the end portion in close proximity to the wafer 9 which is placed on the stage 1 The protrusion on the back side of the outer circumference is the same as that of Fig. 24. The ozonizer 70, the ozone supply pipe 71, the supply connector 72, and the frame 5〇 and the discharge nozzle 36 corresponding to the emulsion path #52b are constituent elements of the "reactive gas supply means". Ozone generated as a reactive gas by the odor emulsified H7G is sequentially taken out through the ozone 71, the supply connector 72, and the reactive gas path 52b, and the nozzle 36 is ejected. Since the ejection nozzle 36 is disposed very close to the outer peripheral side of the wafer 9G, it can be surely ejected to the outer peripheral portion of the back surface of the wafer 9 while the ozone is not diffused and purified, and the film 92c is effectively removed, and even if the ejection is 107857. Doc 1284369 The nozzle 36 interferes with the optical path of the laser light L from the laser heater 20, and the laser beam 1 can pass through the discharge nozzle 36, and can reliably heat the processed portion of the wafer 9〇, which is the same as that of FIG. Further, the ozone which has been processed is passed through the suction means, that is, the suction path 53d in the vicinity of the discharge nozzle 36, the exhaust path of the suction connector 57, or the like, or the space 50a, the gap of the 逑 Palace seal 6〇, and the suction path 51c. The exhaust path is the same as that of Figs. 1 and 24, in which the exhaust is sucked by a suction and exhaust device not shown. above. A cover member 8 is provided above the peripheral wall 53 of the crucible. Similarly to FIG. 27, the covering member 8A can be moved back upward (indicated by a hypothetical line in FIG. 29) and the set position by an unapplied lifting mechanism (the solid line in the figure) No) Lifting between. The covering member 8 at the set position abuts on the upper surface of the upper peripheral wall 53 and extends inward in the radial direction, and the inner end portion of the inner portion is positioned in the lower portion.

The configuration is equal to the wavelength extraction unit and the like. The optical system 122 is further inserted into a focus adjustment mechanism by a concentrating system such as a parabolic cylindrical lens and a band pass filter. The optical system 107857.doc 1284369 transmits infrared rays from the infrared lamp 121 through a band pass filter, and condenses them by a concentrating system such as a parabolic mirror and a lens, and is concentrated on the entire circumference of the back surface of the wafer 90. Thereby, the film 92c of the outer peripheral portion of the back surface can be heated partially and once a week. The infrared lamp 121 can also use a far-infrared lamp or a near-infrared lamp. The wavelength of the light is 76 〇 〜 1 〇〇〇〇 11111, and is bandpassed; the wave filter extracts light from the absorption wavelength of the film 92c. Thereby, the heating efficiency of the film 92c can be further increased.

Inside the infrared heater 120, a lamp cooling path 125 is formed over the entire circumference. The lamp cooling path 125 is connected to the unillustrated refrigerant supply source via the refrigerant to the path 126 and the return path 127 to circulate the refrigerant. . Thereby, the infrared heater 12A can be cooled. Refrigerant such as water, air, helium, etc. When air and water are used, they can also be discharged from the return path 127 without returning to the refrigerant supply source. The refrigerant supply source for cooling the heater may be shared with the refrigerant supply source for heat absorption of the substrate. The k cold portion path 125, the outward path 126, the return path 127, and the heater cold portion supply source constitute a "radiation heater cooling mechanism". The reactive gas supply source of the reactive gas supply means uses ozonation (4) in the same manner as the apparatus of Fig. 29. The ozonator 7Q is bonded to a plurality of supply connectors 72 of the frame 50 via an ozone supply pipe. The number of supply connectors 72 is eight in the future. These supply connectors 72 are disposed at equal intervals in the circumferential direction of the upper peripheral portion of the outer peripheral surface of the peripheral wall 52. The upper side of the peripheral wall 52 is provided as a discharge path and a discharge port forming member. = the upper side of the peripheral wall 52 is connected to the supply connector 72 such that the reaction path 73 is horizontally directed to the inner side in the light direction, and the entire circumference of the phantom cover is in the circumferential direction of ^7857. (100 - 72 - 1284369 to form a ring shape. Reactivity The gas path 73 is opened at the entire circumference of the inner circumference of the peripheral wall 52, and forms an annular discharge port 74. The enthalpy of the discharge port 74 is located above the carrier port 10 and should be set on the day of the day. The back surface of 90 is slightly lower, and is connected to the outer circumference of the circle 90, and is arranged to surround the entire circumference thereof. The ozone-conducting reactive gas path from the ozonated H70 (4) is connected to the supply connector 72 to diffuse to the opposite position. The entire circumference of the emulsion path 73 is discharged from the entire circumference of the discharge port 74, and the ozone can be ejected once to the entire circumference of the outer peripheral portion of the back surface of the wafer 9 卩. In the apparatus of FIG. 30, as described above, the field can process the wafer row all at once, so that the stage 1 does not need to be rotated, but the processing is uniform in the circumferential direction. , it is still appropriate to make it rotate. Figure 30 device makes the cover structure When the 80 is located at the installation position, a suction path is formed on the entire circumference between the upper surface and the upper surface of the peripheral wall 52. The suction path is connected to the unexposed suction and exhaust device via the suction connector 57 provided on the cover member 8 Thereby, the reactive gas can be exhausted from the periphery of the outer periphery of the wafer 90 to be exhausted. The inventors used the same apparatus as in FIG. 3 to make the outer edge of the wafer protrude from the stage 10 by 3 mm, and the refrigerant The water temperature in the chamber 41 is 5. When 〇, and 5 〇, the wafer surface temperature is measured from the vicinity of the heated portion near the outer edge of the wafer to the radially inner side. Infrared heater i 2 〇 The output conditions are as follows. Light source: Optical system for ring halogen lamp bundle··Parabolic mirror 107857.doc -73- 1284369

Light-emitting wavelength: 800~2000 nm Output: 200 W Poor sound of local heating part · See reverse · 2 mm The results are shown in Figure 32. , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , It is 4 〇〇 or more), and the part of the 9th claw from the inside of the radial direction is protected from the inside. (1) The low temperature of 50 C or less is confirmed to suppress the film.

damage. The lifetime of the oxygen atom radical obtained by the ozonolysis as shown in Fig. 33 depends on the degree of fox, and is very long at around 25 &lt; t, but at 50. (: Half is reduced in the vicinity.) In order to ensure the reaction with the film 92c, 35 is added, which may cause the temperature of the ozone discharge path to rise.

Here, a discharge path cooling (tempering) mechanism is provided in the substrate outer peripheral processing apparatus shown in Fig. 34. That is, a reactive gas cooling path 丨3 G is provided inside the peripheral wall 5 2 of the frame 5 that is the discharge path forming member, and the reactive gas cold portion path control 13G passes through the refrigerant to the path 13 1 and the return path 132. On the other hand, the refrigerant supply source is used to circulate the refrigerant. The refrigerant uses water, air, helium, etc. When air and water are used, it can be discharged from the return path 132 without returning to the refrigerant supply source. The refrigerant supply for cooling the discharge path may be shared with the refrigerant supply source for heat absorption of the substrate, whereby the ozone in the reactive gas path 52b can be cooled, and the amount of free radicals in the dragon can be reduced. Maintaining the activity, and further improving the removal efficiency of the media. The substrate of Fig. 34 is located at the same time as the anti-green gas supply (four) is the same as the use of the ozonator, but can also use the electricity of Figure 24: 107857.doc - 74- 1284369 A reactive gas cooling path 丨3〇 is provided in the apparatus of the head 30 to perform cooling of the reactive gas path 52b. Above the center of the wafer 90 on which the stage 10 is further disposed, the inert gas nozzle N is provided as an inert gas ejecting member with the discharge port facing downward. The upstream end of the inert gas nozzle N is connected to an inert gas supply source not shown. From the inert gas supply source, an inert gas such as nitrogen gas is introduced into the inert gas nozzle N, and is ejected from the discharge port. The ejected nitrogen gas radially spreads from the center to the outer side in the radial direction along the upper surface of the wafer 9 。. Nitrogen gas then reaches the gap 82a between the outer peripheral portion of the wafer 90 and the cover member 8, and a blade spreads to the back side of the wafer 9 through. By the flow of the nitrogen gas, y prevents the treatment of the peripheral side of the outer peripheral portion of the wafer 90 from completing the reaction gas X to the front side of the substrate, and it is possible to surely prevent leakage from the gap 82 &ample to the outside. Further, when the wafer 90 is placed on the stage i or the wafer 9 is taken out, the inert gas nozzle N is retracted to avoid interference. The radiant heater of the substrate peripheral processing apparatus of Fig. 34 is heated by laser irradiation, but otherwise, as shown in Fig. 35, infrared heating may be used, and the infrared heater 120 may be the same as that of Fig. 30. , forming a ring shape covering the entire circumference of the frame 50. 2: The peripheral processing device of the substrate of Figure 5%, which is from the ozonator - the port connector 72 is disposed in the laser irradiation unit 22 of the bottom plate 51 of the box _ busy wood 50 ” Between 6 。, the supply is formed into a tubular discharge of the diameter forming member... "72 is connected as a discharge path and a discharge nozzle 75. The ejection nozzle 75 extends from the supply connection Jie 72 straight upward to the bottom of the 10th side of the carrier port, 107857.doc *75- 1284369 The test piece 'follows,' the end of the 10th side of the loading platform extends obliquely upward. The end opening of the discharge nozzle 75 is a discharge port, and is located near the upper edge of the circumferential side surface of the stage 1. The discharge port is adjacent to the outer peripheral portion of the back surface of the wafer 90 provided on the stage 10, and ozone is ejected toward the film 92c. In this configuration, the refrigerant is cooled in the refrigerant chamber 41 inside the stage 1G, and the discharge nozzle 75 is cooled in addition to the endothermic cooling of the wafer 90. Thereby, the substrate heat absorbing mechanism and the discharge port path cooling (tempering) mechanism are provided. Therefore, it is not necessary to form the reactive gas cooling path 130 in the figure, and the cost can be reduced. Further, it is preferable to apply a coating on the circumferential side surface of the stage 10 or the outer surface of the discharge nozzle 75 to reduce the friction of the stage 10 rotation. The friction material is reduced by the grease or the like. The substrate peripheral processing apparatus shown in Fig. 37 has a step 丨2 formed on the entire circumference of the upper surface of the stage, and the wafer 9 is placed at the step 12 and Forming a recess between the wafers 90 The recessed portion 12a covers the king's circumference of the stage 1 and opens to the outside in the radial direction. The depth along the radial direction of the recessed portion i2a is about 3 to 5 mm. The ozone ejected from the ejection nozzle 36 enters the concave portion. That is, the gas staying portion 12a is temporarily retained, whereby the reaction time between the ozone and the film 92c on the outer peripheral portion of the back surface of the wafer (10) can be sufficiently ensured, and the processing efficiency can be improved. The substrate peripheral processing device shown in Fig. 38 is A fence En is provided on the outer side of the outer peripheral portion of the stage 1 in the radial direction. A substrate insertion hole 10a is formed in the inner peripheral side wall of the fence 1 facing the side of the stage 1. The wafer disposed on the stage 10 The projecting outer peripheral portion of the 9 inch is inserted into the inside of the fence En through the substrate insertion hole 10a. The peripheral side wall of the fence is inserted through the end portion of the plasma discharge head 3, whereby the reactive gas is The discharge port is disposed inside the fence En. In addition, the radiant heater such as the 107857.doc -76-1284369 laser heater 20 of the laser heater 20 leaves the lower side of the fence En, that is, disposed on the fence En External. The enclosure En is transparent to quartz, borosilicate glass and transparent resin. Thereby, the laser light L from the laser irradiation unit 22 is partially irradiated to the outer peripheral portion of the back surface of the wafer 90 through the bottom plate such as the bottom plate. Thereby, the outer peripheral portion of the back surface of the wafer 90 can be locally radiated. In addition, a reactive gas such as oxygen radicals and ozone generated in the plasma nozzle 3 is ejected to the inside of the fence, and is sprayed to the portion where the local heating is performed, and the film 92 can be surely removed. The reactive gas is prevented from leaking to the outside by the enclosure En. Then, the exhaust gas is sucked from the suction port of the plasma spray head 30. Further, at least the bottom plate of the fence En opposite to the laser irradiation unit 22 is made of a light transmissive material. Just fine.

Fig. 39 is a view showing the state of the optical system of the radiant heater. The optical fiber cable 23 (waveguide) is optically connected to the light source 21 of the laser heater 2G, and is an optical system that transmits the emitted light to the outer peripheral portion of the wafer 9G. The fiber winding 23 is composed of a bundle of a plurality of fibers. These bundles of fibers are called from the laser source and are divergent in several directions to become a plurality of divergent electron microscopes 23a. Each of the diverging electric powers (4)a may be constituted by a stringer optical fiber, or may be formed by a bundle of several bundles of money. The end portion of the #knife electric winding 23a extends to the outer peripheral portion of the carrier, and is spaced apart from each other along the circumferential direction of the carrier 10. And configuration. The end portion of each of the branch cables is disposed at the position to be processed!&gt; That is, the wafer 9 disposed on the stage ig is disposed directly opposite to the wafer 9A immediately below the outer peripheral portion of the wafer. And correspondingly to the end portions of the branch cables 23a, the plasma heads 30 1 are disposed laterally, and laser irradiation units 107857.doc -77 - 1284369 22 ' are provided at the end portions of the respective cables 23a. Omitted. The laser light from the light source 21 is transmitted by the optical fiber cable 23 so as not to be scattered toward the outer peripheral portion of the back surface of the wafer 90. And distributed by the divergent cable 2 3 a to the circumferential side. Upward different positions. Then, it is ejected upward from the end face of each of the branch cables 23a. Thereby, laser irradiation can be performed from the vicinity of the outer peripheral portion of the back surface of the wafer 9A. Further, the spot lasers from the i point light sources 21 can be distributed to a plurality of positions in the circumferential direction of the wafer 90. Thereby, the film can be removed by heating the plurality of positions at the same time. Furthermore, 'the light source 21 can be set freely. ^The wiring of the optical fiber is also easy.

Further, a bundling optical member such as a cylindrical lens may be provided at the end of the branch cable 23a to bundle the emitted light. A plurality of light sources 21 may be provided, and each of the optical fiber coils 23 from the respective light sources 21 extends in a predetermined circumferential direction. The end portion of the wafer is tilted to the end of the fiber, and the discharge port of the electropolymer head 30 is placed directly below, and the arrangement relationship between the end portion of the fiber and the discharge port can be variously arranged. Of course, in addition to the plasma spray head 3, an ozonator 70 can be used. In addition to the laser light source 21, an infrared lamp can also be used. S4〇_ shows the discharge nozzle to the discharge port of the device shown in Fig. 24 and the like: two T:: the appearance. As shown in Fig. 40 (a), in the discharge nozzle 36x, a swirling guide (four) is formed as a swirling flow forming portion. The two directions are formed at equal intervals (for example, four). The swirling pilot hole = extending in the substantially tangential direction of the inner circumference of the inner circumference of the mouth, that is, the nozzle outlet, and the peripheral wall of the nozzle 36 is external and as shown in the figure (8), along with the peripheral wall of the nozzle 36 The outer circumference faces the inner circumference 107857.doc -78-1284369 surface (that is, the inner side in the warp direction), and is inclined at the end direction of the nozzle 36X. Each of the outer side ends of the guide hole 36b is connected to the discharge path. The circumferential side/end portion is connected to the discharge day 36ae. Therefore, the swirling guide hole constitutes a communication path between the discharge path 52b and the discharge port 36&amp; and even the path portion on the upstream side of the discharge port.

The discharge nozzle 36X can incline the reactive gas from the discharge path to the inside of the discharge port 36a, and the swirling machine is formed along the inner peripheral surface of the discharge port to make the reactive gas uniform. Further, the reactive gas passes through the pores to swirl the pilot holes 36b, and is relatively expanded and sprayed to the discharge ports 36&amp;, so that it can be further uniformized by pressure loss. The swirling flow of the homogenized reactive gas is forcibly ejected from the nozzle 36X, and is ejected onto the back outer periphery W' of the wafer 9 to perform a good film removal process. The substrate peripheral processing apparatus shown in Fig. 4! and Fig. 42 has a processing head (10) on the side of the load (4). The substrate peripheral processing apparatus mainly removes the film that has spread to the back surface of the outer peripheral portion of the wafer 9 and the processing head is disposed just below the upper surface of the stage 1A. In the case where the film on the outer side of the outer peripheral portion of the wafer 9 is mainly removed, the processing head can be placed upside down on the upper side of the stage 1 so as to be vertically inverted. The processing head 1GG is provided with a discharge nozzle 75 and a suction exhaust nozzle %. The ozone supply unit 71 extends from an ozonator serving as a reactive gas supply source, and the ozone supply tube 71 is connected to the base end portion of the discharge nozzle 75 via a connector 72 of the processing head (10). The discharge nozzle 75 is disposed below the processing position (the outer peripheral portion of the wafer 90 on the stage 1). The discharge nozzle L75' of the end portion of the discharge nozzle is viewed from the plane (FIG. 41) as being substantially along the circumferential direction (tangential direction) of the outer circumference of the wafer 9〇 and toward the side of the stage J 亦The radius side _57.doc -79- !284369 is slightly inclined to the inside and is viewed from the front (Fig. 42), and is directed toward the wafer 9g and then ejected from the end of the squirting 75 to the processed position p (crystal) Near the circumference of the outer circumference of the circle 90). Further, at least the end portion of the nozzle 75 can be made of a translucent material such as translucent Teflon (registered trademark) Pyrex (registered trademark) glass or quartz glass. A connector 77 connected to the suction exhaust nozzle 76 is provided at a side opposite to the discharge side connection II 72 of the processing head. The exhaust pipe 78 extends from the connector 77, and the exhaust pipe 78 is connected to an exhaust mechanism 79 including an exhaust pump or the like. The suction/discharge nozzle 76 is disposed below the processing position p (the outer peripheral portion of the wafer 9 on the stage). The suction axis that attracts the end portion of the exhaust gas jet (four) is viewed from the plane (Fig. 41), straight toward the tangential direction of the outer circumference of the wafer 9〇, and is tilted upward toward the wafer 9 while being observed (Fig. 42). The suction port at the end of the suction nozzle No. is located substantially at the same height as the discharge port of the f-outlet nozzle 75, directly below the back surface of the circle 90). As shown in the figure, the end portions of the discharge nozzles 75 and the exhaust nozzles 76 are circumferentially oriented along the wafer 9 (the assumed annular surface C on the outer side in the radial direction of the upper surface of the stage iq). (Tangent direction), which is disposed so as to face each other with the processed bit D interposed therebetween. A processed position p is disposed between the discharge port at the end of the discharge nozzle 75 and the suction population at the end of the discharge nozzle 76. The discharge nozzle 7 is disposed on the upstream side along the rotation direction of the stage 10 and the wafer 9 (in the clockwise direction as viewed in plan), and the suction nozzle No. % is disposed on the downstream side. 0f The distance between the discharge port of the nozzle 75 and the suction port of the suction nozzle No. ' is considered as the reaction temperature of the film 92e to be removed, the number of revolutions of the stage ig, and 107857.doc -80 - l284369 The laser heater 20 The addition can be six inches, 1 + such as ... month force 4, such as in the range of a few mm ~ number + mm suitable settings. When the photoresist is removed, the interval between the discharge port of the discharge nozzle 75 and the suction port of the suction and discharge nozzle 76 must be set to a temperature in the processing portion of the wafer of 15 or more generations, if necessary, 5 mm to 40 mm. The scope. The suction nozzle 76 has a larger suction port diameter than the discharge nozzle, and is about 2 to 5 times larger. If the diameter of the discharge port is the same as the degree of the suction, the suction diameter is about μ mm. . . As shown in Fig. 42 on the side below the processing head (8), a laser irradiation unit 22 as a laser heater 20 for the radiant heater is provided. The laser irradiation unit is placed on the lower side of the nozzle 75' 76, and as shown in Fig. 41, is disposed between the end portions of the nozzle (four) nozzle 75 and the exhaust nozzle 76 as viewed in plan. The processed position P is located directly above the laser irradiation unit 22. In the above configuration, the laser light from the laser light source 21 is irradiated to the upper side directly from the laser irradiation unit 22 via the optical fiber cable U. Thereby, the back surface of the outer peripheral portion of the wafer 90 is locally heated. The portion of the local heating is temporarily maintained at a high level and is moved to the downstream side in the rotational direction by the rotation of the stage 1 。. Therefore, in addition to the portion to be irradiated (the processed position P) directly above the laser irradiation unit 22, the outer peripheral portion of the wafer 90 is formed at a higher temperature than the portion on the downstream side in the rotational direction. Of course, the irradiated portion p directly above the laser irradiation unit 22 is the most temperature-dependent, and the temperature drops as it goes from the downstream side in the rotational direction. The distribution curve τ represented by the two-dot chain line in Fig. 4 is the temperature distribution of the wafer, and the part Ρ is irradiated as the center, and the distribution of the high temperature area is biased toward the downstream side of the directional direction (about the radiant heating effect, It will be described later in the embodiment of Fig. 46 in the figure 杓~107857.doc -81 · 1284369). :: The laser heating and the rotation of the stage are simultaneously described as 'Ozonator 7. Ozone gas. Passing through the supply pipe 71, the connector 72 and the discharge nozzle 75, from the spray

The heart spurts out (4) 5 and squirts out. The ozone is sprayed onto the wafer 9〇. The periphery of the irradiated portion (processed position p) on the back side of the portion. Since the discharge axis L75 is angled upward, the ozone gas can be surely ejected to the wafer. Further, since the discharge axis L75 forms an angle inside the radial direction, the ozone gas system is ejected toward the inner side of the wafer 90. Thereby, it is possible to surely prevent ozone from propagating from the outer end surface of the wafer 90 to the front side, and it is possible to prevent damage to the front side of the surface of the wafer after the ozone gas is sprayed to the 9Gf surface of the wafer. On the other hand, it flows toward the exhaust nozzle 76 side substantially along the tangent line 'the tangential portion of the irradiated portion on the outer circumference of the wafer 9'. Thereby, the reaction time of the ozone with the film 92c on the back surface of the wafer 90 can be ensured for a very long time. The ozone gas flows along the direction of deviation of the temperature distribution of the wafer 90. Therefore, the portion P to be irradiated after the ejection is of course in the row downstream of the portion to be irradiated p, and the portion on the side of the nozzle 76 is liable to cause a reaction with the membrane. This can improve processing efficiency. At the same time, the attraction mechanism 79 is driven. Thereby, the ozone gas and the reaction by-products which have been processed are not diffused, and can be guided to the suction port of the exhaust nozzle 76 to suck the exhaust gas. Since the suction port is larger than the discharge port, it is possible to surely capture 70% of the ozone gas or the like in the suction process, and it is possible to surely suppress the diffusion of the ozone gas or the like after the treatment. Further, it is possible to surely prevent ozone gas or the like from spreading to the front side of the wafer 90, and it is possible to surely prevent the film 92 on the front side from being damaged by characteristics, etc. Further, the reaction by-products can be quickly excluded from the periphery of the processed portion of the wafer 90. 107857.doc - 82- !284369 成物. The rotation direction of the stage 10 is directed toward the self-discharge direction (in the direction in which the ozone gas flows). The modification of Fig. 42. As shown by the arrow curve in Fig. 41, the nozzle 75 is shown in Fig. 43 of the suction nozzle 76 and Fig. 44, and the nozzle (Fig. 41) and the processing head (10) of the substrate peripheral processing apparatus are provided with a nozzle of the branch discharge nozzle 75. The holding member 75Ηβ nozzle holding member 75h is made of a material having good heat conductivity. At the ejection nozzle 75

Inside the 、, 埚 75, a cold portion path 130 is formed, and the medium is cooled by water or the like in the cold portion path 13G. Thereby, the nozzle holding member 75H can be cooled and the discharge nozzle 75 can be cooled. The plane observation position of the laser irradiation unit 22 is disposed at an intermediate portion of each of the discharge nozzles 75 〇 suction nozzles 76. And the discharge nozzle is configured on the side. Both the discharge nozzle 75 and the suction exhaust nozzle 76 are detachable in the treatment head 〇〇. Thereby, it can be changed to an optimum shape as needed. When a supply of oxygen is supplied, the medium passes through the cooling path 130 in the nozzle holding member 75H. Thereby, the discharge nozzle 75 can be cooled via the nozzle holding member 75n, and the ozone gas passing through the inside of the discharge nozzle 75 can be cooled. Thereby, it is possible to avoid reducing the number of oxygen atom radicals while maintaining high activity. Further, it can be surely etched by reacting with the film 92c. At the same time as the above-described ozone supply, the laser heater 2 is turned on, and the laser light L is emitted from the early irradiation 7022 to the upper side. As shown in the bottom view of Fig. 45(b), the laser light is spot-shaped on the center of the region where the back surface of the wafer 9 is extremely small. This area is located between the discharge port of the discharge nozzle 75 and the suction port of the suction nozzle 76, where the passage of the ozone gas is just incident. The local radiation heats the region Rs, 107857.doc -83 - 1284369 to reach a high temperature of hundreds of degrees. By contacting ozone with the elevated temperature region Rs, the reaction can be promoted, and the treatment efficiency can be improved. As the stage H) and thus the wafer 90 rotate, the local radiant heating area is shuffled. That is, the dots on the outer peripheral side of the wafer 9 are located at a certain moment in the light-heating region Rs' and immediately pass therethrough. Therefore, the light-heating period is instantaneous. For example, the wafer 90 has a diameter of 2 mm and a rotational speed of i rpm. When the diameter of the radiation region RS is 3 mm, the radiant heating period is only about 3 seconds. Further, when each point on the outer peripheral surface of the wafer 90 is heated, the heat is temporarily retained after passing through the radiation (4) Rs (see the surface temperature distribution map of Fig. 46). During this high temperature period, the ozone gas passage between the discharge nozzle 75 and the suction nozzle is still in contact with the ozone. In this way, the processing efficiency can be further improved.

And since the radiation RS field RS is biased toward the side of the ejection nozzle 75, when the ozone is sprayed at each point on the outer peripheral side of the wafer, the radiant heating is immediately performed, and then the point is temporarily maintained high even if it is separated from the radiation region Rs, and It is in constant contact with ozone during its high temperature period. Thereby, the processing efficiency can be further improved. Further, the portion of the outer peripheral portion of the crystal 8J9G is not absorbed directly by the radiation heat from the laser heater 20, but also by the cooling medium in the stage 1 to absorb heat and cool. Therefore, even if the heat of the radiant heating region Rs is transmitted: the temperature rise can be suppressed, and the low temperature state is surely maintained. Thereby, it is possible to surely prevent damage to the film 92 which does not need to be removed, and maintain a good film quality. a Figure 46 (a) shows the measurement results of the temperature distribution on the side of the wafer surface at a certain moment when the back surface of the wafer is heated by the laser, and the temperature is measured in the circumferential direction of the back surface. Figure (b) shows the picture. The laser output is 107857.doc -84 - 1284369 10〇w and the number of revolutions is lrpm. The diameter of the radiation region Rs is about 3 m. The position 〇 on the outer circumference of the wafer 90 of the figure (4) corresponds to the origin of the horizontal axis of the figure (8). The horizontal axis of the graph (b) is the point at which the outer circumference P of the wafer back surface is indicated by the distance from the position 〇. The radiation regions in the two figures and the region R 包含 containing them respectively form a corresponding relationship. The area Ro corresponds to the length D (see Fig. 45 (b)) between the discharge nozzle and the suction nozzle. also

As can be seen from Fig. 46(b), the portion into the radiation region is only a very small range but is formed by heat conduction from the radiation region RS to 15 〇〇c or more. When entering the radiation area RS, it suddenly rises to form a temperature distribution of 35{rc~79〇. The temperature is lowered after passing through the radiant area, but it is still 15 liters or more, while maintaining the temperature at which organic matter can be removed. From this, it is found that the combination of rotation and radiant heating can effectively remove organic matter. The range of high temperatures after passing through the radiating area RS depends on the number of revolutions of the laser output and the stage. The gap between the discharge nozzle and the suction nozzle (the width of the above region R〇) can be set in accordance with this. In order to reduce the temperature of the shot region Rs, it is possible to reduce the laser output or increase the number of revolutions of the stage. Conversely, in order to increase the temperature, it can be matched by increasing the laser output or reducing the number of revolutions of the stage. The processing head 00 of the substrate peripheral processing apparatus shown in Figs. 47 and 48 is disposed on the upper side of the wafer 90 on the stage. The discharge nozzles 75 and the exhaust nozzles 76 are also disposed on the upper side of the wafer 90. Similarly to FIGS. 41 to 44, the nozzles 75 and 76 are arranged in a plane view so as to be opposed to each other along the substantially circumferential direction of the wafer 90 (tangential direction near the processing position p) with the processed position P interposed therebetween. . The illumination unit 22 of the laser heater 20 is disposed just above the processed position P in the direction 107857.doc -85 - 1284369. The laser beam axis of the illumination unit 22 passes through the processed position p, and the vertical line ' orthogonal to the wafer 90' is focused on the processed position p. . The laser beam from the irradiation unit 22 is irradiated onto the wafer 9 at a processed position ρ' on the side surface of the peripheral portion to radiate and heat the film on the front side of the processed position Ρ. At the same time, ozone from the ozonator 70 is ejected from the ejection nozzle 75 onto the side surface of the wafer % periphery and is substantially along the processed position. The tangential direction of the nearby wafer row flows. By this, it is possible to remove the film which is not required on the outer side of the outer circumference of the crucible. The gas flow on the wafer 90 is along the direction of rotation of the wafer 90 and also in the direction in which the high temperature region of the residual heat remains (Fig. 46(4)). This can improve the efficiency of the process. The gas (including the reaction by-products including fine particles or the like) which has been processed is sucked by the suction of the suction nozzle 76 and the rotation of the wafer 9 (), and the flow direction at the time of the discharge is substantially maintained, and is sucked into the suction nozzle 76 to be discharged. gas. Borrow &quot;T to prevent the accumulation of particles on the outer circumference of the aa round 90. Since the diameter of the suction nozzle 76 is larger than that of the discharge nozzle 75, leakage of the process completion gas can be suppressed. Fig. 49 is a view showing a modification of the arrangement structure of the suction nozzles. The suction jet 76 is placed from the carrier 1 and further from the outside of the radius of the wafer 9Q to the inside of the approximate radius of the wafer 9 ,, and is disposed in plan view so as to be substantially orthogonal to the discharge nozzle 75. The suction port position at the end of the suction nozzle 76 is disposed slightly apart from the discharge port at the end of the discharge nozzle 75 in the positive direction of the wafer turn direction. The position of the suction nozzle 76 in the upper and lower directions is placed on the upper surface of the stage 1 to be substantially the same height as the wafer 9A. The structure can be ejected from the ejection nozzle 75. After the reaction, the processed gas (including the reaction by-products such as microparticles) is quickly outputted from the wafer 90 to the outside of the radius 107857.doc -86 - 1284369, and sucked into the row by the suction nozzle 76. Gas prevents the accumulation of particles on the wafer 9 。. In the suction nozzle structure shown in Fig. 50, the suction nozzle % is disposed on the stage 1A on the lower side of the outer peripheral portion of the wafer 90. The suction port at the end of the suction nozzle is disposed at a position slightly smaller than the discharge port at the end of the discharge nozzle 75, and is slightly apart in the positive direction of the rotation direction of the wafer 9. As shown by the arrow in Fig. 51, the gas ejected from the discharge nozzle 76 flows from the upper surface side of the outer peripheral portion of the wafer 90 to the lower surface side along the outer end surface. In this process, the unnecessary film 92 on the outer end surface of the wafer 90 is reacted, and the film 92c on the outer end surface can be surely removed. Then, the processed gas (including reaction by-products such as fine particles) is sucked into the lower suction nozzle 76 to be exhausted. In the substrate peripheral processing apparatus shown in Figs. 52 and 53, the irradiation unit 22 is disposed obliquely to the outer peripheral portion of the wafer 9 (the processed position p) from the upper side of the wafer 90 and outside the radius. The inclination angle of the irradiation unit 22 is, for example, about 45. . As shown in Fig. 54, the irradiation optical axis L2 〇 (the central axis of the laser beam) of the irradiation unit 22 intersects with the upper side inclined portion of the outer circumference of the 曰曰 round 90, which coincides with the film surface normal of the intersection. Or just in the direction of the thickness of the film that is handed over. The beam-emitting unit 22 is provided with a focusing optical system including a convex lens, a cylindrical lens, and the like, and the laser beam L sent from the light source 21 by the optical fiber 23 can be inclined toward the upper side of the outer circumference of the circle 90 and the optical axis. The intersection of B 2 (the illuminated point) is concentrated. As shown in Fig. 54, the above-described structure is such that the laser light from the irradiation unit 22 is above the outer peripheral portion of the wafer 90 and the outer side of the radius is inclined downward toward the outer periphery of the wafer 9 to be about 45. The angle is shot and bundled. Then, it is irradiated on the wafer side outside the 107857.doc -87-1284369 upper side inclined portion. The laser illuminator 20 is substantially orthogonal to the illuminated point, = approximately 〇. Thereby, the heating efficiency can be improved, and the outer peripheral portion of the crystal 0 90 around the spot to be irradiated can be partially and surely heated. By bringing the ozone of the nozzle 75 into contact with the locally heated portion, the film 92e can be effectively removed as shown in Fig. 55.

The inventors performed the laser self-obliquely upper 45 as shown in FIG. The angle is partially focused on the experiment of irradiating the outer periphery of the wafer. The number of wafer revolutions is Μ, and the laser output is 130 watts. Then, the surface temperature of the vertical outer end surface of the wafer was measured by an infrared thermal imager, and the immediately below the irradiated spot was measured as a ride. In addition, the laser irradiation angle is formed vertically to 3 〇. , other conditions with the above 45. The same 'measured is 2〇9 23 directly below the illuminated point. . . This proves that a sufficiently large etching rate can be ensured. another. The direction of the radiation from the field is directly above the outer periphery of the wafer, and the other wafer rotations and laser output conditions are the same as above. The temperature of the vertical outer end surface of the wafer is measured as 114.3 generations. Reduce the temperature of the button to increase the temperature. This is due to the fact that the laser is not directly incident on the vertical outer end surface directly above the outer peripheral portion of the wafer (in the direction of the wafer row). Further, as shown in the figure, it was found that the irradiation direction was inclined to 45. The heating temperature can be increased to 9 〇. About 2 times. The laser irradiation axis L2 of the projecting unit 22 only needs to be tilted from the radius of the wafer 9 to the outer periphery of the wafer 9〇. The tilt angle of the laser irradiation axis can be tilted to a level as shown in Fig. 56, in addition to the tilt. Thus, the laser light from the irradiation unit 22 is perpendicularly irradiated from the front side of the wafer 9 to the outer end surface of the wafer 9G. The angle of the person's angle is roughly zero. Thereby, the film 92c of the outer end surface of the wafer 90 can be heated in the step 107857.doc -88-1284369, and the nominal rate can be further improved. The inventors tilted the irradiation unit 22 to a level as shown in Fig. 56, and the ^^ 曰 positive side concentrating beam irradiated the laser to the outer periphery of the wafer, and other conditions were the same as those of the above-mentioned figure (wafer revolutions: 50 Rpm, laser output (130 watts) was used for the heating experiment. Then, the surface temperature of the vertical outer end surface of the wafer was measured and found to be 256·36° (: thereby, it was found that the wafer was perpendicular to the outer end surface, by The positive side of the Z wafer is irradiated, and the temperature can be further increased, and the processing can be performed at a higher speed. As shown in Fig. 57, the organic film 92 such as a fluorocarbon or the like is also provided on the back side of the outer peripheral portion of the wafer cassette (lower side) The tendency to spread the film. To mainly remove the film of the back surface in the film 92c of the outer circumference of the round 90, the irradiation unit can be placed on the lower side of the wafer 90 and outside the radius, and The position is toward the outer circumference of the wafer 9. Thus, the laser beam from the irradiation unit 22 is concentrated from the lower side of the wafer 9 且 and the outer side of the radius is obliquely upward toward the outer circumference of the wafer 90. The optical axis L2 of the laser The angle of the 〇 is about 45. The laser is incident at an angle of incidence close to zero. The film is incident on the lower side of the outer peripheral portion of the wafer 90. Thereby, the outer peripheral portion of the wafer 9 can be made high in temperature, and the film 92c on the back side can be heated to remove the film on the side of the sea surface at a high speed. 92c. In the back surface treatment, the discharge nozzle and the exhaust nozzle 7 6 are preferably disposed on the lower side of the outer peripheral portion of the wafer 9. As shown in Fig. 58, in addition to the tilting unit, the irradiation unit 22 may be attached. A vertical illumination unit 22 is formed on the wafer 90. The vertical illumination unit 22 is connected to the laser source 21A different from the tilt illumination unit 22 via the fiber optic cable 23Χ. The two fiber cables can also be diverged from the same laser source. 1 107857.doc -89- 1284369 is connected to the vertical irradiation unit (10) and the other is connected to the tilting irradiation unit 22. The device structure of the two irradiation units 22, 22X is provided, and the outer circumference of the wafer 90 is inclined. The film 92c of the outer end surface can be effectively removed by pouring the irradiation unit 22 at a high temperature, and the film 92c of the flat portion on the outer circumference of the wafer 9 can be effectively removed by heating the vertical irradiation unit 22 at a high temperature. Remove wafer 9 The film 92c of all the outer peripheral portions is not required. The angle of the irradiation unit 22 is not limited to the fixed one, and the angle may be changed as shown in Fig. 59. The substrate peripheral processing device shown in Fig. 59 is provided with an irradiation unit. The moving mechanism 3 is used. The guide mechanism 31 is provided in the moving mechanism %. The guide rail 31 is formed in an arc shape of approximately 1⁄4 间 between the substantially 12 o'clock position and the substantially 3 o'clock position. The outer peripheral portion (processed position p) of the wafer 90 is disposed at a position of the center of the arc of the guide rail 31. The irradiation unit 22 is mounted on the mouth guide 3 1 and can be irradiated by the circumferential direction of the guide 3 22 and its laser optical axis L2 〇 are always oriented toward the periphery of the wafer 9 卩, and at the position of the vertical posture directly above the outer peripheral portion of the wafer 90 (the two-point chain line of FIG. 59) and the formation of the wafer 9〇 The position between the horizontal posture of the positive side (the dotted line in Fig. 59) includes 90. The corners can be adjusted. The movement of the illumination unit W laser light correction 2() includes a stage ι and a half of the daily yen %, and is disposed on the upper surface of the stage 10 and perpendicular to the wafer 90. The moving mechanism 30 is provided with a driving mechanism for moving the irradiation unit 22 along the guide rail between the vertical posture position and the horizontal posture position, but the drawings are omitted. The substrate peripheral processing device of the additional 4 moving mechanism 3〇 When the solid line in Fig. 59 does not mainly process the upper side inclined portion of the outer peripheral portion of the wafer 90, the irradiation unit I07857.doc-90-I284369 element 22 and the laser optical axis L20 are inclined at about 45 on the upper side of the wafer 90. Thereby, the peripheral portion of the upper peripheral portion of the wafer 90 is centered, and the periphery thereof can be surely heated at a high temperature, and the unnecessary film 92c around the upper inclined portion can be surely removed at a high etching rate. When the vertical outer end surface of the wafer 9 主要 is mainly processed, the irradiation unit 22 and the laser optical axis L20 are tilted on the positive side of the wafer 9 而 to form a horizontal posture. The center can surely heat the periphery thereof at a high temperature, and the unnecessary film 92c around the outer end surface can be surely removed at a high etching rate. As shown by the two-dot chain line in the figure, the wafer 9 is mainly processed on the outer peripheral surface of the wafer. Temple, making the irradiation unit 22 and the laser optical axis L20 are positioned vertically above the wafer 9A, and are opened in a vertical posture. Thereby, the flat portion on the upper side of the outer periphery of the wafer 9 is centered, and the periphery thereof can be surely heated at a high temperature, and the high etching rate can be surely removed. An unnecessary film 92c around the upper planar portion. Thus, each of the outer peripheral portions of the wafer 90 can be effectively processed. As shown in FIG. 60, in order to focus on the film on the back side of the outer peripheral portion of the wafer 9 The guide rail 3 of the moving mechanism 30 can be formed at about 3 o'clock and about 6 o'clock, including about 9 〇. The arc of the circumference is 4 o'clock. At this time, the shooting unit 22 and its laser optical axis L20 always faces the outer periphery of the wafer 9〇 (processed position P), and is at a position where the horizontal posture of the positive side of the wafer 9 is formed (the dotted line in FIG. 6A) and the vertical direction directly below the outer peripheral portion of the wafer 90 is formed. The position of the posture (the two-point chain line of Fig. 60) includes 9 inches. The angle can be adjusted. Thereby, as shown by the solid line in Fig. 60, when the lower side inclined portion of the outer peripheral portion of the wafer 9 is mainly processed, The irradiation unit 22 and the laser optical axis L2 are placed on the lower side of the wafer 9〇 107857.doc -91 - 128 4369, if it is inclined by about 4 5, the wafer (the center of the outer peripheral portion of the outer surface of the outer surface of the outer surface of the outer surface of the substrate) can be heated at a high temperature, and the upper inclined portion can be surely removed at a high etching rate. The peripheral film 92c is not required. / As shown by the broken line in the figure, when the vertical outer end surface of the wafer 90 is mainly processed, the irradiation unit 22 and the laser light extraction L20 are poured on the positive side of the wafer 9 to form a horizontal level. In this manner, the outer surface of the wafer 9G can be used to heat the periphery at a high temperature. If the ratio is high (four), the periphery of the outer end surface can be removed: the film 92c is as shown in the figure. When the plane portion on the outer peripheral back side of the wafer 9 is mainly processed, the irradiation unit 22 and the laser optical axis L2G are positioned directly below the wafer 9〇 to form a vertical posture. By this, the peripheral portion of the outer peripheral surface side of the wafer 90 can be heated at a high temperature, and the unnecessary film 92c around the back side flat portion can be surely removed at a high etching rate. In this way, the respective portions of the outer peripheral portion of the wafer 90 can be effectively processed. - In Fig. 59 and Fig. 60, the "guide rail 31" has an arc shape of a quarter of a circle, and the range of the adjustable angle of the irradiation single tg22 and the laser optical axis L20 is about 9 〇. However, it is also possible to form the guide rail 31 from about 12 o'clock to about 6 o'clock, including about 18 。. In the semicircular shape, the irradiation unit 22 and the laser optical axis L2 may be immersed from directly above and below the outer peripheral portion of the wafer 90 to include (10). The angle range adjusts the angle. The substrate peripheral processing apparatus shown in Figs. 61 to 67 has the processing head 100 disposed on one side of the stage 1A. As shown in Fig. 67, the processing head 1 can advance and retreat between the processing position (the solid line in Fig. 67) that enters and exits the stage 10 and the retreat position (the assumed line in Fig. 67) from the stage 1〇. In the state, it is supported by the device 107857.doc -92- 1284369 frame (not shown). The processing head 100 is not limited to one, and may be disposed in the circumferential direction of the stage 10 and arranged in a plurality. As shown in Figs. 61 to 64, the processing head 100 has a head body 1〇1 and a shank type nozzle 160 provided in the head body 101. The head body 101 is formed in a substantially cubic shape. As shown in Figs. 16 and 62, an irradiation unit 22 of a laser heater is provided on the upper side of the head body 101. As shown in Figs. 61 to 4, an opening 102 facing the stage 10 is formed at a lower side portion of the head body 1 ο 1 . The top surface of the opening 102 faces the illumination window at the lower end of the illumination unit 22. On the wall of the lower portion of the head body 101, a gas supply path 71 of one path and exhaust paths 76, 76γ, 76Z of three paths are formed. As shown in Fig. 62, the base end (upstream end) of the gas supply path 71 is connected to the odor oxidation|§ 70. As shown in Figs. 62 and 63, the end (downward end) of the gas supply path 71 extends toward the inner side surface of the opening 102 side of the head body 101. As shown in Figs. 62 and 63, the inner side surface on the side opposite to the gas supply path 71 in the opening 1〇2 of the head main body 1 is opened at the suction end of the exhaust path 76. The height of the suction end of the exhaust path 76 is set to be slightly higher than the upper surface of the stage 1〇. The exhaust path 76 is disposed on the downstream side of the gas supply path 71 and further the shank type nozzle 1 60 along the direction of rotation of the wafer 9 (in the clockwise direction as viewed in plan). As shown in Fig. 62, the suction end of the other exhaust path 76γ is opened at the central portion of the bottom surface of the opening 102 of the head body ιοί. The suction end of the exhaust path 76γ is disposed directly below the irradiation unit 22 and the short tube portion 161 which will be described later. 107857.doc -93 - 1284369 As shown in Figs. 61 and 64, the suction end of the remaining strip exhaust path 76Z is opened on the inner side of the bottom side of the opening 102 of the head body 101. The suction end of the exhaust path 76Z is set to have substantially the same height as the upper surface of the stage 10. The downstream ends of the exhaust paths 76X, 76Y, 76Z are connected to an exhaust mechanism such as an exhaust pump (not shown). As shown in Fig. 62 and Fig. 63, the above-described shank type nozzle 160 is provided inside the opening of the head body ιοί. As shown in Fig. 65, the shank type nozzle ι6 〇 has a short cylindrical portion 16 1 ' and a straight tubular introduction portion 62. The short tube portion 1 61 and the introduction portion 162 are made of a transparent material such as quartz which is resistant to ozone. As shown in FIGS. 62 and 63, the introduction portion 162 extends horizontally. The base end portion of the introduction portion 162 is embedded in the head body 101 and supported, and is connected to the end portion of the gas supply path 71. The inside of the introduction portion 162 constitutes an introduction path 162a into which ozone (reactive gas) is introduced. The diameter of the introduction path 162 is 1 mm to 5 mm, and the flow path of the introduction path 162a is about 0.79 mm 2 to 1 9.6 mm 2 and the length is 20 mm to 35 mm. The end portion of the introduction portion 162 extends to the inside of the opening ι 2 of the head body 101, and the short tube portion 161 is connected thereto. The short tubular portion 161 is disposed at a central portion of the opening 1〇2 of the head main body 1〇1. The short cylindrical portion 161 is formed in a closed cylindrical shape that is vertically opened toward the lower surface of the axis. The diameter of the short cylindrical portion 161 is much larger than the diameter of the introduction portion 162. The axis of the short cylindrical portion ι61 coincides with the illumination axis of the irradiation unit 22 along the central axis of the head body 10 1 . For example, the diameter of the short tube portion 161 is 5 mm to 20 mm, and the height is 1 mm to 2 mm. The upper end (base end) of the short tube portion 161 is integrally provided with a cover portion for occluding the 107857.doc. -94 - 1284369 163. The lid portion 163 is disposed just below the illumination window of the irradiation unit 22. As described above, the entire short tube portion 161 including the lid portion 163 is made of a light transmissive material such as quartz glass, but at least the lid portion 163 may have translucency. Translucent material In addition to quartz glass, soda glass and other general-purpose glass, polycarbonate, acrylic, and other high-transparency resins may be used. The thickness of the lid portion 163 is preferably 0.1 mm to 3 mm. The introduction portion 162 is connected to the upper side portion of the circumferential side portion of the short cylindrical portion 161, and the introduction path 162a inside the guide portion 161 is communicated with the internal space 161a of the short cylindrical portion 1 61. The downstream end of the introduction path 162a forms a communication port 160a with the internal space 161a of the short cylindrical portion 161. The cross-sectional area of the flow path of the internal space 161a of the short cylindrical portion 161 is much larger than the cross-sectional area of the flow path of the introduction path 162a and the communication port i60a. For example, the cross-sectional area of the flow path of the communication port 160a is approximately 79·79ιηπι 2 to 196 mm 2 , and the cross-sectional area of the internal space 161 a of the short cylindrical portion 161 is 196 melon 2 to 314 mm 2 °. Ozone (transaction gas) introduced through the path 162a The self-communication port 16〇&amp;in|inserts into the internal space l61a of the short tube part 161 and expands, and temporarily stays here. The internal space 1613 of the short cylindrical portion 161 forms a temporary retention space of ozone (reactive gas). As shown in FIG. 6A and FIG. 62, the lower surface (end) of the short cylindrical portion 161 is opened. When the processing head 100 is placed at the processing position, the position of the outer peripheral portion (processed position) of the wafer 90 on the stage 10 is directly below the lower edge of the short tube portion i 6 i, and the short tube portion 161 is covered. The location being processed. The gap between the lower end edge of the short cylindrical portion 161 and the outer peripheral portion of the wafer row is set to be extremely small, for example, about 5 min. The temporary stagnation space 161a of the inner portion of the short cylindrical portion 16 面向 faces the wafer 9〇 via the extremely small gap 107857.doc -95- !284369 circumference (processed position). As shown in Fig. 63, the short cylindrical portion 161 at the processing position is disposed slightly outside the radius of the wafer 90 than the outer edge of the wafer 90. Thereby, the temporary stagnation space 丨6丨a inside the short cylindrical portion 161 communicates with the outside via the lower edge of the protruding portion of the short cylindrical portion 丨6丨 and the outer peripheral edge of the wafer 90. A discharge port 164 for the retained gas of the temporary retention space 161a is formed between the lower edge of the protruding portion of the short cylindrical portion 161 and the outer peripheral edge of the wafer 90. A method of removing the film 92c on the outer peripheral portion of the back surface of the wafer 9 by the wafer peripheral processing device of the above configuration 4 will be described. By transporting the robot or the like, the wafer 90 to be processed is placed on the top of the stage 1 while the center is aligned, and sucked and held. Next, the processing head 1 is advanced from the retracted position and set at the processing position. Thereby, as shown in Fig. 66, the outer peripheral portion of the wafer 90 is inserted into the opening 1〇2 of the head main body 1〇1, and is disposed below the short cylindrical portion 1 61. Eight-person, the laser light source 2 is turned on, and the laser beam is irradiated from the irradiation unit 22 to the outer periphery of the wafer 9〇. Thereby, the film 92c which heats the outer peripheral portion of the wafer 90 can be irradiated in a dot (partial) manner. Although the cover portion 163 of the short cylindrical portion i6i is interposed in the middle of the optical path, the cover portion 163 has high light transmittance, so that the amount of light is hardly reduced, and the heating efficiency can be maintained. While the above laser is being heated, ozone is sent from the ozonator 7 to the gas supply path 71. The ozone introduction guide 162 is introduced into the introduction portion 162, and is introduced into the temporary storage space 161a inside the short cylindrical portion 161 from the communication port 16A. Since the temporary retention space 16u is larger than the introduction path 162&amp; and the connection 160a, the ozone is temporarily retained in the temporary retention space 161 &amp; Thereby, the ozone and the wafer 9 can be extended. The above-mentioned local area of the outer circumference adds the contact time of the two positions to ensure sufficient reaction time. Thereby, the film defect at the above-mentioned local heating position can be surely removed, and the treatment rate can be improved. Further, the utilization of ozone can be sufficiently increased to avoid waste, and the amount of gas required can be reduced.

. The short cylindrical portion 161 slightly protrudes from the outer periphery of the wafer 9G, and the protruding portion and the outer peripheral edge of the crystal 90 form a discharge port (6) from the inside of the short cylindrical portion i6i. Therefore, the gas retention in the inside of the short cylindrical portion 161 is temporary, and the gas having a reduced degree of activity and the reaction product (microparticles) can be quickly discharged from the discharge port, and fresh ozone is always supplied. Temporarily retaining space l61a, while maintaining high reaction efficiency. Once the hunting path is adjusted by the exhaust path 76χ, 76γ, 76z of the three paths, the leakage from the discharge port 164 can be controlled, and the gas flow in the opening (10) after the leak can be controlled. By providing the exhaust paths 76 χ, MY, 76 3 of the three paths, even if the particles are diffused, they can be surely attracted and exhausted. At the same time, by rotating the stage 1 〇, it is possible to cover the film 92c which removes the outer peripheral portion of the wafer by the whole circumference. In addition, the outer circumference of the Japanese yen is cooled by the cooling and heat absorption mechanism in the σ 10 . The inner side of the 邱 Γ Γ 及 及 及 及 及 及 及 及 及 及 及 及 及 及 及 及 及 及 及 及 及 及 及 及 及 及 及 及 及 及 及 及 及 及 及 及 及 及 及 及 及 及After the removal process is completed, the processing head 1 is retracted, the wafer stage 1 is released, and the wafer 90 is taken out from the stage 10. ▲ Figure (a) (C) does not, by immersing the position of the short tube portion (6) of the processing position in the radial direction of the stage 10, and adjusting the short tube portion ΐ6ι from the wafer 卯107857.doc - 97- 1284369 The amount of protrusion of the outer circumference can adjust the processing width of the removed film 92c (the oblique portion of the figure). The inventors conducted the light transmittance test of the cover portion ι63 using the experimental apparatus of Fig. 69. The quartz glass plate G is patterned into a lid portion 163, and the laser light L from the laser irradiation unit 22 is irradiated onto the quartz glass plate G, and a laser power measuring device D is disposed on the back side thereof to measure the power transmitted through the laser, and Calculate the attenuation rate. The output of the laser irradiation unit 22 is switched by a number of steps to determine the laser work of each stage.

rate. The quartz glass plate G was prepared in two plates having different thicknesses, and each of the glass plates G was measured in the same manner. The results are as follows [Table 1] ~ Secret power measurement value [Watt]

In the above table, regardless of the output of the irradiation unit 22 and the thickness of the glass plate, the reduction rate is less than 4%. I _ illuminating unit output [Watt] laser power measurement value [Watt] fading parameter 2.7 1.79 2.7 --~_ —_1^3 A 12.4 1 12 - 21 .〇_2^5 --~—- ---- 20.9 3.24 28.4 —-------------- __3^73 ~ Glass plate thickness: 0.7 mm Therefore, even if the light path from the irradiation unit 22 has a handle configuration spray In the crotch portion 163, 96% or more of the laser light L can still pass through the lid portion 163, and the heating efficiency of the outer peripheral portion of the crucible 90 is hardly lowered. 1284369 In addition, even if all of the laser energy attenuating portion is absorbed by the lid portion 163, the suction rate is still less than 4%, so that heat is not generated. It can be sufficiently cooled by the ozone flowing through the shank type nozzle 160. Therefore, the shank type nozzle of the cover portion 163 and the like is hardly heated, and heat resistance is hardly required. Fig. 70 shows a modification of the shank type nozzle 160. In this modification, a notch 161b is formed in the lower end edge of the short cylindrical portion 161 of the shank type nozzle 160 as a discharge port. As shown in Fig. 71, the notch 161b is disposed on the opposite side of the direction toward the stage 10 from the circumferential direction of the short cylindrical portion 161 (corresponding to the position outside the radius of the wafer 90). The notch 161b forms a semicircle having a radius of about 2 mm. The shape and size of the notch igib are not limited to the above, and can be appropriately set. According to this modification, it is possible to reliably discharge 70% of the gas and the reaction by-product from the notch 161b, and to supply fresh ozone to the temporary retention space 161a, and to obtain high reaction efficiency. Since the short cylindrical portion 161 of the shank type nozzle 160 itself has a discharge port, it is not necessary to cause the short cylindrical portion 161 to protrude from the outer edge of the wafer 90, and a discharge port 164 is formed between the short cylindrical portion 161 and the outer edge of the wafer &gt; As shown in Fig. 68(c), even if the short tube portion 161 is aligned with the outer edge of the wafer 90, the space 16 can be temporarily retained to reliably flow out the process gas and the reaction by-product, and the removed film 92c can be enlarged. The processing width can be set in the range. 72 and 73 show a modification of the exhaust system. Exhaust nozzles 76A, 76YA, 76ZA may also be provided in the opening 102 of the processing head. As shown in the hypothetical line of Fig. 73, the exhaust nozzle 76 is extended from the exhaust path 76 at the side of the head body 10 1 toward the central portion of the opening 1 , 2, extending in the substantially tangential direction of the wafer 90 on the stage 10. . The end of the exhaust nozzle 76 is -OQ - 1284369 and the opening is slightly away from the downstream side of the short cylindrical portion 161 in the direction of rotation of the wafer 9 (in the clockwise direction as viewed in plan), and is directed toward the short cylindrical portion 161 Side configuration. The exhaust nozzle 76 is disposed slightly above the wafer 9 and is inclined downward downward, and the opening of the end faces obliquely downward. The reaction by-products such as fine particles generated on the wafer 9〇 immediately below the barrel portion 161 flow toward the side of the exhaust nozzle 76 as the wafer 90 rotates. By sucking and exhausting it by the exhaust squirt 76XA, it is possible to surely prevent the accumulation of fine particles on the wafer 9A. As shown in the hypothetical lines of Figs. 72 and 73, the exhaust nozzle 76γΑ extends vertically from the exhaust path 76Y at the bottom of the head body. The opening of the exhaust nozzle 76/8 is disposed so as to be slightly separated from the lower end of the opening of the short cylindrical portion 丨6丨. The outer peripheral portion of the wafer 90 is inserted between the short cylindrical portion 6 丨 and the exhaust nozzle %. Thereby, the exhaust nozzle 76YA can suck the reaction by-products such as fine particles generated on the wafer 90 directly under the short cylindrical portion 161 to the lower exhaust gas, and it is possible to surely prevent the deposition of fine particles on the wafer 90. At the same time, the reactive gas such as ozone from the short tube portion 161 can be controlled from the upper side edge of the outer peripheral portion of the wafer 9 to the lower side edge, and the wafer 9 can be made in addition to the upper side edge. The lower edge is in contact with the reactive gas. Thereby, it is possible to surely remove the unnecessary turns 92c of the entire outer peripheral portion of the wafer 9〇. As shown in the hypothetical line of Fig. 72, the exhaust nozzle 76ZA is from the exhaust path 76Z of the bottom side of the opening 102 of the head body ιι to the central portion of the opening 1〇2, and in the radial inner direction of the wafer 90. extend. The end opening of the exhaust nozzle 76ZA is slightly smaller than the short tube portion 161 on the bottom side (outside the radius of the wafer 9A), and is disposed toward the I07857.doc -100-1284369 button portion 1 61. The upper and lower positions of the exhaust nozzle 76ZA are disposed at substantially the same height as the lower end portion of the short cylindrical portion 161 and the wafer 9'. Thereby, the exhaust gas nozzle 76ZA can rapidly discharge the fine particles generated on the wafer 90 directly under the short cylindrical portion 161 from the wafer 9〇 to the outside of the radius to attract the row and roll, thereby reliably preventing the deposition of fine particles on the wafer 9〇. Even if the particles spread, they can still attract the exhaust gas. Optionally, three exhaust nozzles 76XA, 76YA, 76ZA can be installed.

1 or 2 can be installed selectively or 3 can be installed. It can also be installed in 2 or 3, and one of them is selected for suction and exhaust. Two or three simultaneous suction and exhaust can also be performed. In the substrate peripheral processing apparatus of Figs. 74 to 77, a long-tube type squirt 17 〇 (tube portion) is used instead of the above-described shank type nozzle 16 〇. Further, an introduction portion 179 containing an ozone-resistant resin (e.g., polyethylene terephthalate) is used instead of the introduction portion 162 made of quartz integrated with the above-described shank type nozzle 160. The long nozzle 170 and the introduction portion 179 are independent of each other. As shown in Fig. 6, the long nozzle type 170 is formed of a transparent material such as quartz or the like which is made of a transparent material such as quartz, and has a closed cylindrical shape which is longer than the short cylindrical portion 161. For example, the length of the long nozzle 170 is 40 mm to 8 mm, and the cross-sectional area of the outer diameter of the thin internal space is 196 faces 2 to 2. Ming: Sit spray ^ 1 7 Ο upper end (base end) is integrally provided with a permeable occlusion. As shown in Figs. 74 and 75, the cover portion 173 is just below the illumination window for the illumination element 22. The irradiation unit 22 is configured to collectively illuminate the outer peripheral portion (processed position) of the wafer 9Q irradiated with the laser beam by the cover portion 173. 107857.doc 1284369 The thickness of the bottom 173 is preferably 0.1 mm to 3 mm. The long nozzle 170 is vertically disposed toward the axis and is disposed at the center of the opening 1〇2 of the head body ι. The long cylindrical nozzle 17 is inserted through the outer periphery of the wafer 9 on the stage 1 (processed position) The arrangement is such that the intermediate portion intersects the outer periphery of the wafer 90. A slit 174 is formed in a peripheral portion of the portion of the long cylindrical nozzle 17A and the outer peripheral portion of the wafer 9 (corresponding to the portion to be processed). The slit 174 extends in a circumferential direction of the long cylindrical nozzle 170 covering substantially a half circumference. The thickness of the undercut 174 is larger than that of the wafer 9 and can be inserted into the periphery of the wafer 9 。. For example, the slit 174 is disposed at a position of about 1 〇 to 3 〇 from the upper end of the long nozzle 17 〇. The thickness of the slit 174 (upper and lower dimensions) is about 2 mm to 5 mm. The center angle of the slit 174 is preferably 240. ~330〇. The introduction portion Π9 is connected to a portion i7i of the upper side (base end side) of the slit 174 of the long nozzle 170. The downstream end of the introduction path 179 &amp; in the introduction portion 179 communicates with the inside of the upper nozzle portion 171 to become the communication port i7〇a. The inside of the upper nozzle portion 171 of the long nozzle type nozzle 170 constitutes a temporary retention space 171a. As shown in FIG. 77, when the wafer 9 is inserted into the slit 174, between the outer edge of the wafer 9 and the remaining portion of the slit 174 of the long nozzle 17 is formed from the upper nozzle portion 171. The discharge port 75a of the temporary retention space 17 is formed. The inside of the lower nozzle portion 170 of the long cylindrical nozzle 170 forms a discharge path connected to the discharge port 75a. As shown in Fig. 75, in the long nozzle type 丨7 The lower end of the 〇 is directly connected to the exhaust path 76Y. The first type of smear of the smear is to be disposed on the stage 1 107 107857.doc -102- 1284369 便便处理头〗 Pushing forward to the processing position, and inserting into the outer circumference of the wafer 9 at the 174 of the long nozzle 170. By the length of the 4 type nozzle 1 70, the wafer 90 is vertically spaced apart. And the internal space of the upper and lower nozzle portions 171, 172 is communicated via the discharge port 75a. Next, 'on the outer periphery of the wafer 90, the irradiation unit 22 is irradiated with a laser to locally heat, and the ozonator 7 is used. The ozone is sent from the communication port (10) to the temporary retention space i7ia in the j-side nozzle portion 171. Therefore, similarly to the first embodiment, the film Me of the peripheral portion of the wafer 9 can be effectively removed. The edge of the slit Π4 is extremely narrow between the wafer 90 and the lower nozzle portion 172 is sucked by the vent mechanism. In addition to reliably preventing gas from leaking between the edge of the slit μ and the wafer 90, the reaction can be effectively controlled, and the process completion gas and the reaction by-product are forcedly flowed from the discharge port 75a to the lower nozzle portion 172. It is possible to forcibly exhaust the air from the exhaust path 76 γ. Even if the fine particles are generated, the exhaust gas is forcibly exhausted from the exhaust path 76. A film of two or more types different from each other may be stacked on the wafer 90. As shown in the figure, a film 94 containing an inorganic substance such as cerium oxide is coated on the wafer 9 and covered with a film 92 containing an organic substance such as a photoresist. In this case, the organic film 92 is removed from the periphery of the substrate. In addition to the reactive gas supply means, another reactive gas supply means for removing the inorganic film 94 on the outer periphery of the substrate may be provided. That is, as shown in Figs. 79 to 80, the two-film laminated wafer is used. In the substrate peripheral processing device, in one atmospheric pressure processing chamber 2 There are: one stage 10; the first processing head 100 for the reactive gas supply mechanism for organic film removal; and the second reactive material supply mechanism for inorganic film removal 107857.doc -103·1284369 processing head 200 (Gas guiding member). The first place for the organic film is #丄, and the head 100 is offset by the advance and retreat mechanism, and can be processed along the stage 10 and further rounded at the outer circumference of the 90 (hypothetical line of the figure and Fig. 10) The structure of the first processing head 1 itself is the same as that of the processing head 10 0 shown in Fig. W and Fig. 10, from the outer side of the yaw direction and the retracted position (the solid line of the figure and the rib).

As shown by the solid line and the two-dot chain line in FIG. 80, the organic film processing head (10) is disposed above the horizontal plane of the wafer 90 to be disposed, but as shown by the dotted line in the figure, it may be disposed on the wafer. Below the configuration surface. The dotted organic film processing head 100 is formed in the same manner as the processing head ι shown in Figs. 41 to 44 and the like. A pair of organic film processing heads 100 may be disposed above and below the substrate arrangement surface, and the second processing head 200 for the inorganic film may be disposed from the organic film processing head 100 in the circumferential direction of the stage 10 by 18 degrees. . The second processing head 200 can be separated from the processing position of the outer peripheral portion of the wafer 9 (the assumed line in FIG. 80) and the retracted position outside the wafer 9 in the radial direction by the advancing and retracting mechanism (the solid line of the figure). Going forward and backward. As shown in Fig. 81, the second processing head 2 is formed in a substantially circular arc shape along the outer circumference of the wafer 9. As shown in Fig. 83, an insertion port 2〇1 is formed in a cut shape inside the second processing head 200 on the side of the small diameter side of the second processing head 2''. As shown in Figs. 81 and 82, the insertion port 201 extends over the entire length of the second processing head 2 in the circumferential direction. The thickness of the insertion port 201 in the upper and lower directions is slightly larger than the thickness of the wafer 9A. By the advancement and retreat operation of the second processing head 200, the outer peripheral portion of the wafer 90 is inserted and removed into the insertion port 201. As shown in Fig. 83, the bottom end of the insertion port 2{)1 is greatly enlarged to become the second reactive gas guiding path 202. As shown in Fig. 81, the guide path 2〇2 extends in the longitudinal direction (circumferential direction) of the second processing head 2G0, and forms an arc shape viewed from a plane having a radius of curvature substantially the same as the radius of the wafer %. When the wafer 90 is inserted into the insertion port 201, the outer peripheral portion of the wafer 90 is located inside the guiding path 2〇2. As shown in Fig. 83, the shape of the scraping surface of the guiding path 202 is a perfect circular shape, but is not limited thereto, and may be semicircular or square. Further, the cross-sectional area of the flow path of the guide path 202 can also be set to an appropriate size. The reactive gas (second reactive gas) for removing the inorganic film is reacted with the inorganic material of the silica dioxide 4, and the raw material gas is made of carbon tetrafluoride (carbon), hexafluoride (CJ6) or the like. A fluorine-based gas such as PFC gas or HFC such as CHF3. As shown in Fig. 82, the fluorine-based gas is introduced into one of the fluorine plasma discharge devices 260 as the second reactive gas generation source, and the atmospheric piezoelectric discharge space 261a between the electrodes 261 is plasma-treated to obtain fluorine free. a second reactive gas of a fluorine-based active species such as a base. The second reactive gas supply path 262 extends from the atmospheric piezoelectric discharge space 26la and is connected to the inlet (p〇rt) 2〇2a of one end of the guide path 202 of the second processing head 2〇〇. The discharge path 263 extends from the discharge port 2〇2b of the other end of the guide path 2〇2. The inorganic film processing head 200 is made of a material resistant to fluorine. An unnecessary film including the organic film 92c and the inorganic film 94c on the outer periphery of the wafer 90 is removed in the following manner. [Organic Film Removal Step] First, the step of removing the organic film 92c on the outer peripheral portion of the wafer 90 is performed. In advance 1284369, the processing heads 100, 200 are all retracted to the retracted position. Then, the wafer to be processed is centered on the stage J 藉 by an alignment mechanism (not shown). Next, the organic film processing head 1 is advanced toward the processing position. Thereby, the laser irradiation unit 22 faces a portion p of the outer peripheral portion of the wafer 90, and the ejection nozzle 75 and the suction nozzle 76 sandwich the portion p, and face each other in the tangential direction of the wafer 9 (refer to FIG. 47 and FIG. 48). The inorganic membrane treatment head 2 is still in the retracted position. Then, the laser source 21 is turned on, and a portion of the outer peripheral portion of the wafer 90 is partially laser-heated, and an oxygen system such as ozone generated by the ozonator 70 is ejected from the discharge nozzle 75 of the organic film processing head 1 . The reactive gas is selectively sprayed on the heated portion P (see FIGS. 47 and 48). Thereby, as shown in Fig. 78 (b), the organic film 92c of the above-mentioned portion P is oxidized and etched (ashing). The treatment completion gas containing the residue of the ashed organic film can be sucked by the nozzle 76 and quickly removed. At the same time, by sucking heat on the stage 1 and cooling the portion (main portion) on the inner side of the outer peripheral portion of the wafer 9 ,, it is possible to prevent the film of the inner portion from being affected by heat and causing deterioration in quality. By rotating the stage 10 one to several times, the organic film 92c of the outer peripheral portion of the wafer 9 is removed over the entire circumference, and the inorganic film 94c is exposed over the entire circumference. [Inorganic Film Removal Step] Next, the removal step of the inorganic film 94e on the outer peripheral portion of the wafer 9G is performed. At this time, the round 9 is still placed on the stage 10. Then, before the inorganic film processing head 200, the outer circumference of the circle 9 is inserted into the insertion port 2〇1. Thereby, a certain length of the outer circumference of the wafer 9 is surrounded by the guiding path 2〇2. By adjusting the insertion amount, J07857.doc 1284369 can easily control the width (processing width) of the 臈94c to be removed. Then, a fluorine-based gas such as carbon tetrafluoride is supplied to the interelectrode space 261a of the fluorine-based plasma discharge device 260, and an electric field is applied between the electrodes % to generate an atmospheric glow discharge electric discharge. Thereby, the fluorine-based gas is activated to form a fluorine-based reactive gas containing a fluorine radical or the like. The fluorine-based reactive gas is introduced into the guiding path 2〇2 of the inorganic film processing head 2 via the supply path 262, and flows along the guiding path 202 to the circumferential direction of the outer peripheral portion of the wafer 9. Thereby, as shown in Fig. 78 (c), the inorganic film on the outer peripheral portion of the wafer 9 can be removed by etching. At the same time, the stage 10 is rotated, whereby the inorganic film 94e which is etched and removed from the outer periphery of the wafer 9 can be covered. The process completion gas including the by-product of the shutdown is discharged from the discharge path 263. Further, since the insertion port 2〇1 is narrow, it is possible to prevent the fluorine-based reactive gas from diffusing from the outer peripheral portion of the wafer 90 to the inner portion. Further, by adjusting the flow rate of the murine reactive gas, it is possible to further surely prevent the gas from diffusing to the inner portion. Further, the organic film processing head 100 may be retracted to the retracted position before the inorganic film removing step is completed after the organic film removing step is completed, or may be retreated after the inorganic film removing step is completed. When the organic film 92c is removed by the first rotation of the stage 10, the inorganic film can be removed simultaneously with the removal of the organic film. In the middle of the organic film removal step, the inorganic film removal step may be performed simultaneously with the removal of the organic film when the partial exposure is not performed. When the inorganic film component is cerium or the like, a by-product such as (NH4)2SiF6 or NH4F.HF is produced as a solid at normal temperature. Therefore, at this time, the organic film processing head (10) can be placed at the processing position during the inorganic film removing step, and the laser heater 20 can continue to irradiate the outer periphery of the wafer 9 to the light 107857.doc -107 - 1284369. Thereby, the by-product which is solid at the normal temperature can be vaporized. Further, the nozzle 76 can be attracted to suck the vaporized by-product and be discharged. After the inorganic film removing step, the heads 1 and 2 are retracted to the retracted position, and the rotation of the stage H) is stopped. Then, the chuck mechanism of the stage _ is clamped to hold the wafer 90, and the wafer 9 is carried out. The removal method is in a state in which the wafer 90 is continuously placed on the stage 1 while the entire period of the organic film removal step and the inorganic film removal step is passed. Therefore, when the organic film removing step is transferred to the inorganic film removing step, it is not necessary to transfer the wafer 90 to another position, and the transfer time can be omitted. In addition, fine particles are generated without contact with the transfer dragon at the time of transfer. Furthermore, there is no need to realign. In this way, in addition to greatly reducing the processing time of the whole, it is possible to perform the precision processing in addition to the two. Further, the alignment mechanism 3 and the stage 3G can be shared, and the structure of the device can be simplified and densified. By providing a plurality of processing heads 100, 200 in one common processing chamber 2, it is possible to correspond to various film types. Furthermore, it is also possible to avoid the problem of traffic and pollution. Further, since the present invention is an atmospheric pressure system, the driving portion and the like can be easily accommodated in the processing chamber 2. Further, in the wafer 90, in the case where the organic film 92 and the inorganic film 94 are sequentially stacked from the bottom, the inorganic film removing step is first performed, and the organic film removing step is performed next. The angle of separation of the organic film processing head 100 from the inorganic film processing head 200 is not limited to 180 degrees, and may be separated from ι 2 及 and 9 〇 degrees. The processing positions of the organic film processing head 1 and the inorganic film processing head 2 may be overlapped as long as they do not interfere with each other in the backward position and the forward and backward movement. 107857.doc -108- l284369 The organic membrane processing head 100 may be integrally attached to the oxygen-based reactive gas generation source, and the inorganic membrane processing head 200 may be integrally attached to the fluorine-based reactive gas generation source.

The inventors conducted an etching experiment using a second processing head (gas guiding member) similar to that shown in Figs. 81 to 83. The treatment target was a wafer having a diameter of 8 Å which formed a ruthenium dioxide film. The treatment gas used carbon tetrafluoride at a flow rate of 1 〇〇 cc/min. The process gas is plasma-formed as a reactive gas in the plasma generating space 261 &amp; and passes through the guiding path 2 〇 2 of the gas guiding member 2 . Then, the film is not required to be etched for the entire circumference of the periphery of the wafer. It takes 90 seconds and the amount of gas used is 15 〇 cc. [Comparative Example 1] In the comparative example, the gas guiding member was omitted, and the apparatus for directly discharging the reactive gas from the nozzle was used. When the etching treatment was performed under the same conditions as in Example ,, the time required was 20 minutes, and the gas amount was 2 liter. As a result, it was found that by providing the gas guiding member of the present invention, the time required and the amount of gas used can be greatly reduced at the same time. [Comparative Example 2] Further, a processing head having a double-ring electrode structure having a size corresponding to the outer diameter of the wafer is used, and a reactive gas is sprayed simultaneously from the entire circumference of the annular discharge port having the same diameter as the outer diameter of the wafer. '(4) (4) The whole week of the outer periphery of the crystal. The treatment gas flow rate was 4 liters/mine other conditions were the same as in Example i. In this case, it takes 30 seconds and the amount of gas used is 2 liters. As a result, it was found that the time required for the apparatus of the present invention does not greatly change with the simultaneous processing of the above-mentioned full-wave, and the amount of used gas can be greatly reduced. 107857.d〇c -109- 1284369 Further, the inventors used the same samples and apparatuses as described above, and determined the number of wafer revolutions as 50 卬 111 and 3 rpm, respectively. Then, the film thickness corresponding to the position in the radial direction of the wafer was measured. The results are shown in Figure 84. In the figure, the horizontal axis is the distance from the outer end of the sa circle to the inner side in the radial direction. When the number of revolutions is 5 rpm, the processing width is about 1.6 mm from the outer end, and when the number of revolutions is 300 rpm, it is reduced to the range from the outer end. From this, it is found that the more the number of revolutions, the more the diffusion of the reactive gas to the inner side in the radial direction can be suppressed, and the processing width can be controlled by the number of revolutions. Fig. 85 is a view showing another modification of the above-described apparatus for removing a laminated film. The turbid reactive gas for removing the oxygen-based reactive gas and the inorganic membrane for removing the organic enthalpy is formed by a common plasma discharge device 27 。. Oxygen (02) is used as a material gas for the reactive gas for organic film removal. A fluorine-based gas such as carbon tetrafluoride is used as a material gas for the reactive gas for removing the inorganic film. The material gas supply paths 273, 274 from the respective source gas sources are branched from each other and extended to the atmospheric piezoelectric discharge space 271a between the counter electrodes of the common plasma discharge device 27'. On and off valves 273 V and 274 V are provided in the respective material gas supply paths 273 and 274. The reactive gas supply path 275 from the common plasma discharge device 270 is divided into two of the oxygen-based reactive gas supply path and the fluorine-based reactive gas supply path 278 by one valve 276. The oxygen-based reactive gas supply path 277 is connected to the discharge nozzle of the organic film processing head. The fluorine-based reactive gas supply path 278 is connected to the upstream end of the guide path 2〇2 of the inorganic membrane processing head 2〇〇. In the organic film removal step, the opening of the fluorine-based material gas supply path 274 is closed 107857.doc -110 - 1284369, and the opening and closing valve 273 V of the oxygen-based material gas supply path 273 is opened. The discharge space 271a of the electro-concentration discharge device 270 is activated to generate an oxygen-based reactive gas such as a negative gas-forming radical and ozone, and is also provided by the second-order P-type. . r one-way valve 276' connects the common reactive gas supply path 27 from the plasma discharge device 270 to the oxygen-reactive gas supply 钇77, thereby introducing an oxygen-based reactive gas such as ozone into the organic The ejection nozzle 75 of the film processing head 1 〇 0 can ash the organic film of the outer periphery of the wafer 9 可.

In the inorganic film removal step, the opening of the oxygen-based source gas supply path (7) is closed, and the opening/closing valve V of the fluorine-based source gas supply path 274 is opened, whereby the fluorine-based source gas such as carbon tetrafluoride is introduced into the plasma discharge device 270 to be plasma-treated. The fluorine-based reactive gas such as hydrazine is formed. Further, the common reactive gas supply and port completion 275 from the plasma discharge device 27 is connected to the fluorine-based reactive gas supply path 278 by the three-way valve 276. By this, the fluorine-based reactive gas such as ρ* is introduced into the guide path 2〇2' of the inorganic film processing head 2, and flows in the circumferential direction of the wafer 90, and the inorganic film 94c on the outer peripheral portion of the wafer 9 can be etched and removed. . Fig. 86 is a view showing a modification of the above-described apparatus for removing a laminated film. The stage 10 of this state has a large-diameter stage body 11 (first stage portion) and a center pad 11 丨 (second stage portion) of the felt. The stage main body 110 is formed in a disk shape having a smaller diameter than the wafer 90, and a heat absorbing mechanism such as a refrigerant chamber 4 is provided inside. A housing recess 丨丨〇 a is formed in a central portion of the upper surface of the stage body 110. The center spacer 111 is formed in a disk shape which is much smaller than the stage body 10 and is disposed coaxially with the stage body 110. On the upper surface of the stage body 110 and the center spacer 1U, suction grooves for respectively sucking 107857.doc -111 - 1284369 and b-circle 90 are provided, but the drawings are omitted. Below the center cymbal 111, a shim shaft 112 is disposed coaxially with the stage body 110 and the center pad lu. A center spacer U1 is coupled to the upper end of the spacer shaft 112. A shim driving unit 113 is attached to the shim shaft 112. The shim driving unit 113 is provided with a lifting drive system for raising and lowering the shim shaft 112. The cymbal rotating shaft 112 and the center shim 111 can be housed in the protruding position (Fig. 86 (b)) protruding above the stage main body 110 and the accommodating recess 11 〇 a accommodated in the stage main body 110 by the elevating drive system. The position (Fig. (a)) is raised and lowered (can advance and retreat). Further, the center body 丨丨〇 can be fixed to the center spacer Π1, and connected to the shim driving unit 113 to be raised and lowered, thereby protruding and accommodating the center shim 111. The upper surface of the central position 丨i j of the storage position forms the same plane as the upper surface of the stage body 110, but may also move downward from the upper surface of the stage body 11 . Further, a rotary drive system for rotating the shim shaft 112 and the center shim 11 1 is provided in the cymbal drive unit 113. A chucking mechanism for absorbing the wafer 9 is incorporated in the stage main body 110 and the center pad i丨i, respectively, but the drawings are omitted. The heat absorbing means such as the refrigerant chamber 41 is provided only in the stage main body 11A, not in the center pad 111, but may be provided in the center pad uJ. The inorganic film processing head 200 is located at a height above the center ridge ill of the projecting position. The processing head 200 for inorganic film can advance and retreat between the processing position (the assumed line of Figs. 1 and 2) and the retreating position (the solid line of Fig. 2) close to the center pad lu. 107857.doc • 112- 1284369 As shown in Fig. 86 (a), the organic film removing step starts the cooling mechanism with the center pad m in the storage position, and causes the stage body 1 and the center pad 1 1 1 is rotated around a common axis and treated with an organic film treatment head. As shown in Fig. 86 (b), after the organic film removing step is completed, the organic film processing head is retracted to the retracted position. Next, the center pad 111 is raised by the pad driving unit 1丨3 to be in the protruding position. Thereby, the wafer 9 can be lifted upward from the stage body 110. Then, the inorganic film processing head 200 is moved from the retracted position (the assumed line of Fig. 86 (1) to the processing position (the solid line of the figure), and the inorganic film removing step is performed. Since the wafer 90 is separated from the stage body 11 Above the crucible, it is possible to avoid interference between the outer peripheral portion of the stage main body 110 and the lower portion of the inorganic film processing head 2, and further increase the depth in the radial direction of the wafer 90 along the insertion opening 20 1. Further, it is possible to prevent the second reactive gas from diffusing to the inner portion of the wafer 9. The diameter of the stage body 110 can be sufficiently enlarged, and the heat absorbing mechanism can be surely cooled to the vicinity of the outer periphery of the wafer 90. And the film quality of the inner portion of the outer peripheral portion of the wafer 90. The inorganic film removing step only rotates the center pad 。, whereby the inorganic film 94 〇 of the outer peripheral portion of the wafer 9 is etched and removed. Fig. 87 is a view showing a modification of the structure of the centering cymbal stage. An annular refrigerant chamber 41C is formed inside the stage body 110 as a heat absorbing mechanism. The annular cooling chamber 41c is configured to cause cold heat to act on the wafer. Positive pressure fluid, Alternatively, a cooling path such as a concentric multi-circular shape, a radial shape, or a crumb shape may be formed in the stage main body 110 instead of the annular cooling chamber. 107857.doc • 113- 1284369 is formed on the stage body 110. There is a suction groove 15 for sucking the wafer 90. The suction groove 15 constitutes a fluid for which the suction force acts on the negative pressure of the wafer 9 is finally placed on the center pad 111 and is also provided with the suction wafer 90. The groove is sucked, but the figure is omitted. The suction path extending from the suction groove communicates with the spacer shaft 112 °. The center washer 111 is driven by the lift drive system of the washer drive unit 113, and the assumed line in Fig. 87 The protruding position shown is up and down (elevating) between the protruding position shown by the solid line in the figure, and the center pad ln is completely accommodated in the recess 11 of the stage body 110 in the receiving position. The upper surface of ηι is slightly higher than the upper surface of the stage body 110 (the number 111111). The spacer rotating shaft 112 can be lifted and rotatably inserted into the rotating cylinder 150 which is coaxial with the same. The main part of the rotating cylinder 150 is formed into an equal thickness throughout the circumference. Cylindrical, extending vertically. Rotating cylinder 150 upper end The knot is fixed to the stage body 11 (). The lower end of the rotating cylinder 150 is sequentially coupled to the rotary drive motor 140 (rotary drive mechanism) via the pulley 144, the timing belt belt 143, the pulley 142, and the transmission 141. The driving motor 14 rotates the rotating cylinder 15 to rotate the stage body 110. The square rotating drum 150 is rotatably inserted through the bearing B and is swung inside the fixed cylinder J 8 。. The fixed cylinder 180 is formed and rotated. The cylinder 150 and the washer shaft 112 are coaxially perpendicular to the cylindrical frame, and are fixed to the device frame F. The at least inner circumferential surface of the fixed cylinder 180 is circular in cross section. The fixed cylinder 180 is lower than the rotating cylinder 15, and the rotating cylinder ι5 The upper end l284369 protrudes from the fixed cylinder 180, and the stage body 11A is disposed thereon. In the rotary cylinder 150 and the fixed cylinder 180, the annular cooling chamber 4 1 C of the stage main body 11 is used as a terminal cooling passage, and the suction groove 5 is used as a terminal suction passage. The path of the cooling flow path is as follows.

As shown in Figs. 87, 88 and 89(c), a cooling water opening 181a is formed on the outer circumferential surface of the fixed cylinder 18''. The cooling travel path pipe 191 is extended from the cooling water supply source not shown in the drawing and connected to the opening 18u. The contact path extends from the opening 181a toward the inner side of the radius of the fixed cylinder 18〇. As shown in Fig. 89 (c), a groove-shaped annular path 18^ covering the entire circumference is formed on the inner circumferential surface of the fixed cylinder 18'. A contact path 1 8 1 b is connected to one of the circumferential directions of the annular path 181c. As shown in Fig. 87 and Fig. 88, an annular seal groove U2d is formed on the inner circumferential surface of the upper and lower fixed cylinders 180 with the annular path 181c interposed therebetween. For example, if the =88 does not contain a ring-shaped cooling to the road in the annular sealing groove, the cross-sectional shape of the G1 ° filling sheet G1 is a gate-shaped (C-shaped), and the opening is oriented toward the circular path. 181 (: side of the configuration. The circumferential surface of the packing sheet (1) should be subjected to lubrication treatment. As shown in Fig. 87 and Fig. 88, a path 1513 for extending vertically up and down is formed in the rotating cylinder 150. For example, _ and Fig. 89(4) As shown in the figure, the axis direction path is a fairy surface. The portion is opened to the outer circumference of the rotating cylinder 150 via the communication path 151b, and the ring is at the same height as the annular (four) 181°.

Road (four) le. The position of the circumferential direction of the communication path (4) is changed according to &lt; 10,000 疋, and I and wind I A maintain the state of communication with the ring path 181c _57.d 〇 c - 115 - Ϊ 284369 for the entire 360 degrees. The upper end portion of the tf ′ axis direction path 151 &amp; s of the Fig. 87 is connected to the external relay pipe 157 via the connector 154 on the outer peripheral surface of the rotary cylinder (9). The relay pipe 157 is connected to the annular cooling chamber 41C via the connector 197 on the lower surface of the stage main body U. The return path of the cooling flow path is as follows. As shown in Fig. 87, a connector (10) is provided on the lower side of the stage main body 11b opposite to the 180 degree of the path connecting connector 197. The annular cooling chamber 41C of the stage body 110 is connected to the external relay pipe 158 via the connector 198. The relay member ι 58 is connected to the connector 155 provided on the outer periphery of the upper portion of the rotary cylinder i5Q. As shown in Fig. 87, a shaft-direction path 152a extending vertically up and down is formed in the rotary cylinder 15A. As shown in Fig. 89 (b), the axial direction path center is disposed on the side opposite to the 18 (degree) of the axial direction path 151 &amp; The upper end portion of the axial direction path 152a is connected to the connector 155. As shown in Fig. 87 and Fig. 89 (b), the vehicle is opened on the outer peripheral surface of the rotary cylinder 15 () by the lower end portion of the direction path via the communication path 152b. The communication path 1 and the communication path 1511 to the path are on the opposite side of the degree, and the wire is placed on the upper side of the parallel path from 1511. The communication path 15213 rotates around the central axis along with the axial direction path 152a in accordance with the rotation of the rotating cylinder 15(). An annular path 182c covering the entire circumference is formed on the inner circumferential surface of the fixed cylinder 180. The annular path 182 is smaller than the circular path to the path. The upper side is located at the same height as the communication path 152}3, and is connected to the communication path 152b at one of the circumferential directions. The circumferential direction of the communication path 152b changes as the rotation of the rotating shaft 57.doc - 116 - I284369 is rotated, but the state of communication with the annular path 182c is maintained throughout 360 degrees. As shown in Fig. 87 and Fig. 88, a ring-shaped seal groove 182d for cooling the return path is formed on the inner peripheral surface of the fixed cylinder 180 on the lower side of the upper side of the annular path 182c. As shown in Fig. 88, the seal groove I82d accommodates an annular cooling return path packing sheet G2. The cross-sectional shape of the packing sheet G2 is a gate-shaped (c-shaped)' and is disposed such that its opening faces the side of the annular path 丨 82c. • Lubrication should be applied to the outer surface of the packing sheet 2. As shown in FIGS. 87, 88, and 89(b), a fixed path 丨82b extending from the annular path 182c to the outer side of the radius, and a drain opening connected to the contact path 182b are formed in the fixed cylinder 18〇. 182a. The opening 182a is opened to the outer peripheral surface of the fixed cylinder 180. Cooling return path tube 192 extends from the opening 182 &amp; The contact path 182b and the opening 182a are disposed in the same circumferential direction as the access path 1811) and the opening 1 8 1 a, and are disposed on the upper side. The attraction flow path is constructed as follows. As shown in Figs. 87, 88, and 89(a), a suction opening 183a is formed on the outer peripheral surface of the fixed cylinder 180 on the upper side of the opening 18 of the cooling return path. The suction 193 is extended from the absorption source of the vacuum and the like, which is not shown, and is exhausted 183a. The contact path 183b extends from the opening 183 &amp; toward the inner side of the radius of the fixed cylinder. As shown in Fig. 89 (a), a suction-like meandering path 183c covering the entire circumference is formed on the inner circumferential surface of the objective cylinder 18'. A plurality of connection paths 18 are connected to one side of the annular path 18 in the circumferential direction. As shown in Fig. 87 and Fig. 88, the inner circumference of the 107857.doc -117-1284369 fixed cylinder 180 on the lower side of the upper side of the clip-shaped path 183c covers the entire circumference of the annular seal. Ditch 183d. As shown in Fig. 88, an annular suction packing sheet G3 is accommodated in the seal groove 183d. The cross-sectional shape of the packing sheet G3 is formed in a gate shape (C shape) similarly to the packing sheets G1, 72 of the cooling reciprocating path, but the direction is different from that of the packing sheets G1, 72, and is oriented in an opening direction and a ring shape. The path 18 is arranged on the opposite side of the hole side. Lubrication treatment should be carried out on the outer surface of the packing sheet 3. As shown in Fig. 87, in the rotary cylinder 150, a suction axial direction path 153a that extends straight up and down is formed. As shown in Fig. 89 (a), the lower end portion of the axial direction path 153a is opened to the outer circumferential surface of the rotary cylinder 15 via the communication path 153b. The communication path 153b is located at the same height as the annular path 183, and is connected to the suction annular path 183c. The circumferential direction of the communication path 153b changes depending on the rotation of the rotating cylinder 15b, but the state of communication with the suction annular path 183c is maintained throughout 360 degrees. The axial direction path 153a and the communication path 丨531) are disposed at positions that are offset by 90 degrees in the circumferential direction in the axial direction paths 151a and 52a and the communication paths 151b and 52b that cool the reciprocating path. As shown in Fig. 87, the upper end portion of the axial direction path 153a is connected to the external relay pipe 159 via the connector 156 of the outer peripheral surface of the rotary cylinder 15. The relay pipe 159 is connected to the suction groove 15 via a connector 199 on the lower surface of the stage body 110. Hereinafter, the operation of removing the films 94c and 92c which are unnecessary for the outer periphery of the wafer 9 by using the apparatus of Figs. 87 to 89 will be described. Remove the wafer to be processed from the crucible with a forked robot that is not visible on the drawing and align it with the alignment mechanism (centering). The wafer 90 is lifted horizontally by the fork-shaped robot arm and placed in the center spacer 1 1 1 at the protruding position (the assumed line of Fig. 87). Since the center pad i j i is much smaller than the wafer 9 ,, the operating margin of the machine arm can be sufficiently ensured. After the wafer 9 is placed on the center spacer 111, the forked robot arm is retracted. And driving the center spacer 111 with the attraction mechanism, the wafer 90 is sucked and clamped on the center spacer ln. Next, the center pad 111 is lowered to the upper surface of the stage 1 by the lifting drive system of the pad driving unit 113. Thereby, the surface of the stage 1 is abutted against the wafer 90. At this time, the suction of the center pad 11 is released, and the center pad 111 is further lowered by several mm to be in the accommodating position (solid line in FIG. 87), and the suction pressure is sequentially attracted by driving a suction source such as a vacuum pump. The tube 193, the opening 183a, the connection path 18313, the annular path 183A, the communication path, the axial direction path 153a, the connector 156, the relay tube 159, and the connector 199 are introduced into the suction groove 15. Thereby, the wafer 9 can be sucked on the stage 1 and can be surely held. Then, the rotary drive motor 140 is driven to integrally rotate the rotary cylinder 15 and the stage ι, thereby rotating the wafer 90. Thereby, the communication path lS3b inside the rotary cylinder 15 is rotationally moved in the circumferential direction of the annular path 18A of the fixed cylinder 180, but the communication path between the communication path 153b and the annular path 18 is always maintained. Therefore, the immersion state of the wafer 9 维持 can be maintained even when rotating. As shown in an enlarged view in Fig. 88, the attraction of the suction flow path is moved from the communication path (10) to the communication portion of the annular path, and the gap between the outer circumferential surface of the upper and lower rotating cylinders and the inner circumferential surface of the SJ cylinder 18G. It also acts between the inner circumference of the seal and the G3. This suction (4) acts in the direction in which the packing sheet G3 of the section door is expanded. Therefore, the attraction is larger, and the stronger the 7 G3 is attached to the inner circumference of the sealed groove chest, and the dense (four) becomes larger. Thereby, 107857.doc -119-1284369 can surely prevent leakage from the gap between the outer peripheral surface of the rotating cylinder 150 and the inner peripheral surface of the fixed cylinder 18〇. Before and after the rotation of the carrier 1 〇, the organic film is advanced from the retreat position (the assumed line of Figs. 1 and 87) to the processing position (the solid line of Fig. i and Fig. 87). Then, the laser beam is irradiated from the laser illuminator 2 to one of the outer peripheral portions of the wafer 9 to be locally heated, and ozone is ejected from the ejection nozzle 75 to react with the organic film to make the gas contact with the crystal. The above-mentioned local heating portion of the outer circumference of the circle 9 inches. Thereby, as shown in Fig. 5(b), the outer peripheral organic film 92c can be effectively removed (iv). The treatment gas and the by-product are sucked by the suction nozzle %. The organic film was removed, and the cooling water was supplied to the annular cold portion of the stage body ug to 4 1 C. Further, the cooling water of the cooling water supply source is sequentially passed to the path path 191, the opening 181a, the connection path 18 ratio, and the annular path μ. The communication path 151b, the axial direction path 151a' connector 154, the relay pipe 157, and the connector 197 are supplied to the annular cooling chamber 41A. Thereby, the portion of the stage main body U and the wafer 90 on the inner side of the outer peripheral portion can be cooled. Even if the heat of the laser irradiation is transmitted from the outer periphery of the wafer 90 to the inner side of the radius, the heat can be quickly absorbed, and the temperature of the outer peripheral portion (four) which is caused by the rounding of the circle can be prevented from rising. Thereby, it is possible to prevent the film 94, f2 which is a portion of the outer circumference of the outer circumference of 9G from being damaged. After the cooling water flows through the annular cooling chamber 41C, it passes through the connector 198, the 鏖158, the connector 155, the axial path 15仏, the communication path (10), the annular path 182C, the contact path lion, and the opening. 182a is discharged from the cooling return path tube 192. The communication path (5)b inside the rotating cylinder 15 is also rotated in the circumferential direction of the %-shaped path 181e by the rotation of the carrier 10. However, the communication path 15 is called 107857.doc • 120 - 1284369. The state of communication with the ring path 181 is maintained. Similarly, the "communication path 152b is also rotated in the circumferential direction of the annular path i82c" but the state of communication with the annular path 181e is always maintained. Thereby, the circulation of the cooling water is maintained during the rotation of the stage ίο. As shown in Fig. 88, the cooling portion of the cooling water from the communication path 1 and the annular path 181c is enlarged, and the gap between the outer peripheral surface of the rotating cylinder 15 and the inner circumferential surface of the fixed cylinder 180 is also flowed in. The inside of the annular sealing groove further flows into the opening of the cross-sectional gate-shaped packing sheet G1, and the packing sheet G1 of the β-face shape is attached to the sealing groove 112 d by the pressure expansion of the cooling water; Inside the &amp; By hunting this, it is possible to obtain the sealing pressure of the packing piece in summer to prevent the cooling water from leaking. The packing sheet G2 of the cooling return path can also obtain the same effect. By rotating the stage 10 at least once, the film 92c of the entire periphery of the wafer 9 can be removed. ^ When the removal process of the organic film 92C is completed, the gas ejected from the ejecting nozzle 75 is stopped and sucked from the suction nozzle 76, and the organic film processing head UK) is retracted to the rear, and the center pad is additionally released from the system to the center. The lift driving system sheet 111 of the shim driving unit 113 rises slightly, adheres to the lower surface of the wafer 90, and sucks, and the stage main body 110 sucks the wafer 9 〇. Then, the above-described lifting and lowering driving blade 111 is raised to the protruding position. (Fig. 1 and Fig. 87, the outer peripheral portion of the inorganic film wafer 90, 'celebration, the inorganic film processing head 200 from the retreat position line) is advanced to the processing position (the assumed line of Figs. 1 and 87). ). The wafer 9 is inserted into the insertion port 2〇1 of the processing head 200, and 107857.doc -121 - 1284369 is located inside the guiding path 202. Since the wafer 90 is lifted by the center spacer ιη, the processing head 2 for the inorganic film at the processing position can be moved further away from the stage body 110, and interference with the stage body 11 can be avoided. Then, a gas such as nitrogen, oxygen or fluorine which is based on the inorganic film 94 is plasma-plasmaized by a plasma discharge device not shown, and the plasma gas is guided to one end of the guide path 202 in the extending direction. The plasma gas passes through the guiding path 202 and reacts with the inorganic film 94c on the outer peripheral portion of the wafer 90, whereby the inorganic film 94c can be removed by etching as shown in Fig. 5(c). The process completion gas and by-products are discharged from the other end of the guide path 202 through an exhaust path not shown. At the same time, the center pad ill is rotated by the rotary drive system of the pad drive unit 113. The central film m is rotated at least "under, and the inorganic film 94c of the outer periphery of the wafer 9" can be removed. When the removal process of the inorganic film 94c is completed, the supply of electropolymerization from the electric discharge device is stopped and the inorganic film is processed. The head 200 is retracted to the retracted position. Secondly, a fork-shaped robot arm is inserted between the wafer 90 and the stage 10. The fork-shaped robot arm is attached to the bottom of the wafer 9〇 outside the radius of the center spacer 111. And the absorber of the center cymbal 111 is released. Thereby, the wafer 90 is transferred to the fork-shaped robot arm and carried out. The stage structure of the surface treatment apparatus can cool the k-channel and the suction flow of the stage body u Since the road is disposed from the center axis L c in the direction of the half-way, the center portion can sufficiently secure a space for arranging the mechanism such as lifting and lowering, rotating the center piece i 及 and the suction flow path toward the center pad 1 1 1 . The structure can also be applied to a film in which only an organic film or the like is removed. At this time, 107857.doc - 122 - 1284369 of course does not require the treatment head 2 Ο 0 for the inorganic film. Further, the rotary drive system for the center spacer 111 is not required. Except for the inner circumference of the fixed cylinder 180 A groove-shaped annular path 181c, 182c, 183c may be formed on the outer circumferential surface of the rotary cylinder 150. Fig. 90 shows a change of the second treatment head 200. The second treatment head 200 (gas guiding member) A plasma discharge device 260 for generating a reactive gas is integrally connected. The plasma discharge device 260 has a hot electrode 261H connected to a power source, and a ground electrode 261E connected to the ground. The space between the electrodes 261H and 261E becomes substantially normal pressure. The plasma generating space 261a is formed by introducing a processing gas such as nitrogen, oxygen, or a fluorine-based gas or a chlorine-based gas or a mixed gas thereof into the plasma generating space 261a. A gas collecting nozzle 263 is provided on the lower side of the ratio electrode 26 1H, 261E of the apparatus 260. The gas collecting nozzle 263 is fixed to the upper surface of the second processing head 200 (gas guiding member). A gas is formed in the gas collecting nozzle 263. The clustering path 263a is connected to the downstream end of the electric power generation space 261a, and is gradually reduced in diameter from below. The lower end of the gas clustering path 263a is connected to the guiding path 2 〇2 The opening end of the swim end 202a. The arc length of the gas guiding member 200 (the length along the circumferential direction of the wafer 9) should be appropriately set in consideration of the activity of the active species, etc. The gas guiding member 200 shown in Fig. 91 forms a center. The angle is about 90 degrees. The gas guiding member 200 shown in Fig. 1 has an arc length of about 18 degrees from the center angle. The gas guiding member 200 shown in Fig. has an arc length of about 45 degrees from the center angle. 107857.doc - 123 to 1284369 The position of the introduction port 202a of the gas guiding member 200 is not limited to the upper side portion of the guide roller 202. As shown in Fig. 94(a), it may be disposed on the outer peripheral side of the guiding path 2 0 2 . This configuration is suitable when it is important to remove the film from the outer end face of the wafer. Further, as shown in Fig. 2(b), the introduction opening 2〇2a may be disposed on the lower side of the guiding path 202. This configuration is suitable for the case where it is important to remove the film on the back side of the outer circumference of the wafer. • The introduction opening 2〇2a may be provided on the side end surface of the gas guiding member 200. Similarly, the mountain discharge opening 202b may be provided on the side end surface of the gas guiding member 2A, or may be provided on the upper surface, or may be provided on the lower surface or on the outer circumferential surface. The cross-sectional shape and size of the guide path 2〇2 of the gas guiding member 200 can be appropriately set depending on the treatment area of the undesired substance, the type of the membrane, the amount of the input gas, and the purpose of the treatment. As shown in Fig. 94 (c), the cross section of the guide path 2〇2 can also be reduced. This reduces the processing width. ® &gt; shown in Fig. 4 can also form the guide path 202 into a top-half-shaped cross-sectional shape such that the back surface of the B-circle 90 approaches the flat bottom surface of the guide path 2〇2. Thereby, it is possible to focus on the outer circumference of the wafer 9 - to form a lower semi-circular cross-sectional shape, and to make the wafer 90: = bottom surface, and focus on the back surface of the wafer 90. As shown in the figure, the guide path 2〇2 may be formed into a square cross-sectional shape. The carcass guiding member 2〇〇 is not limited to the removal treatment of the inorganic film or the like which is not required to be heated, and may be applied to an organic film or the like. Removal treatment of film requiring heating 107857.doc - 124 - 1284369 As shown in Fig. 95, a radiant heating mechanism such as a laser heater 2 can be attached to the gas guiding member 200. Vertically above the gas guiding member 200 An irradiation unit ((,, 射) is fixed downward. The optical fiber cable 23 extends from the laser light source 21 of the laser heater 20 and is optically connected to the laser irradiation unit 22. The laser irradiation unit 22 is disposed in the gas The introduction member 200 is adjacent to the end portion of the introduction opening 2〇2a side. As shown in Fig. 96, the hole portion 2 having a circular cross section is formed on the upper side portion of the gas guiding member 200 at the mounting position of the laser irradiation unit 22. The upper end P is open on the upper side of the gas guiding member 2, and the lower end is connected to the upper end of the guiding path 202. The cylindrical portion of the light transmitting member 2〇4 is embedded in the pupil portion 203. The light transmitting member is made of Shiyang glass or the like. High light transmission The transparent member is made of a light-transmitting member 04 and has resistance to gas such as ozone resistance. The material of the light-transmitting member μ* may be made of soda glass or other general-purpose glass or polycarbonate in addition to quartz glass. A resin having high transparency such as acrylic acid. For example, the stone having a good light transmittance is confirmed in the experimental examples of Fig. 69 and the surface. The upper end surface of the light transmitting member 204 is formed on the same surface as the gas guiding member 2 The lower end surface of the light-emitting member 204 faces the upper end portion of the guiding path 2. The laser irradiation unit 22 is disposed directly above the light transmitting member 204, and the shooting window and the light transmitting member of the laser irradiation unit 22 are disposed. 2〇4, the laser irradiation unit κ and the light transmitting member 204 are arranged in such a manner that the center line of each other coincides with each other. I07857.doc -125- 1284369 The laser irradiated from the laser irradiation unit 22 to the immediately below beam is transmitted through the laser. The optical member 204 is focused inside the guiding path 2〇2. The ozonator 7〇 of the reactive gas supply source is connected to the introduction opening 2〇2a of the gas guiding member 200. The oxygen electric device can also be used instead of the ozone. Chemist 7 0. The rotation direction of the stage 10 and further the wafer 90 (the arrow of FIG. %) coincides with the direction of gas flow in the guiding path 202. The device structure is a laser from the laser source 21 passing through the fiber cable 23, and the self-illuminating unit 22 is directed to the lower side of the beam. The laser beam passes through the light transmitting member 204 and enters the inside of the guiding path 2〇2, and is locally attached to one of the outer peripheral portions of the wafer 90 in the guiding path a]. At the same time as the outer circumference of the circle 9. At the same time, the ozone gas from the ozonator 70 is introduced into the guide path 202 from the introduction opening 2〇2&amp; the ozone is contacted with the local heating portion, and the organic film or the like which is required for heating can be effectively removed. The film. Further, the outer peripheral portion of the wafer 90 is heated at a position close to the upstream end of the guiding path 2〇2. Thereby, it can react fully with fresh ozone. Then, the heating portion Ik is moved by the rotation of the stage 10 to the downstream side of the guide path 2〇2, and the temperature is maintained high for a while. Therefore, in addition to the portion on the upstream side of the guide path 2〇2, the intermediate portion and the downstream portion can also sufficiently react. This makes it possible to improve the processing efficiency. In the case where the film on the back side of the outer peripheral portion of the wafer 9 is to be mainly removed, the laser irradiation unit 22 may be provided on the lower side of the gas guiding member 200, and the laser beam may be irradiated from the lower side to the guiding path 202. The figure shows the embodiment of the mechanism corresponding to the notch of the wafer, such as the groove and the orientation flat, 107857.doc-126·1284369. As shown in FIG. 101, the wafer 90 is formed in a disk shape. The size of the wafer 90 (half diameter r) has various specifications. A portion of the circular outer peripheral portion 91 of the wafer 90 is formed with a notch, and the notch portion forms an orientation flat 93. The size of the orientation plane 93 is determined by specifications such as SEMI and JEIDA. For example, r=i〇〇 The orientation plane length L93 of the wafer is L93=55 mm~60 mm. Therefore, the distance 0 from the outer edge of the wafer to the central portion of the orientation flat 93 from the assumption of the non-oriented plane 93 is d = 3.8 • mm to 4.6 mm. When the wafer 90 is formed into a film, the film 92 also reaches the edge of the orientation flat 93. As shown in FIG. 98, the wafer processing apparatus of the present embodiment includes a 匣 310, a robot arm 320, an alignment unit 330, and a processing unit 34A. The g31 is contained in the wafer 90 to be processed. The robot arm 32 takes out the wafer 9〇 from the 31匣, (Fig. 98(a)), passes through the alignment portion 33〇 (Fig. (b)), and transports it to the processing unit 34〇 (Fig. (c) Progressively, the processed wafer 90 is sent back to the 匣31 〇, but the figure omits 0#. The material portion (4) is provided with an alignment unit 33! and an alignment stage 332. As shown in Fig. 98 (4), the stage 332 is formed into a disk shape, and can be rotated around the "axis. The π" of the sea view (b) is temporarily placed on the alignment stage for alignment (centering). Wafer 90. An optical non-contact sensor is provided in the alignment early X331, but the detailed drawings are omitted. For example, the non-contact sensor is a light projector that outputs a laser, and a photodetector that emits light. The light projector and the light receiver are disposed so as to sandwich the outer peripheral portion 9M of the wafer 9 disposed on the alignment stage 332 from the bottom. The ratio of the degree of protrusion of the outer peripheral portion of the wafer is shielded from the light emitter 107857.doc -127- 1284369=Light' changes the amount of light received by the photoreceiver. Thereby, the eccentricity of the wafer can be detected. In addition, the orientation plane 93 can be detected by measuring the portion where the amount of received light is not continuously changed. In addition to the eccentricity detecting portion constituting the wafer 90, the aligning unit 331 also measures the "notch detecting portion" of the flat surface 93 (notch portion). The "alignment mechanism" is constituted by the alignment portion 330 and the robot arm 32. As shown in Fig. 97, in the processing unit 34 of the wafer processing apparatus, there are provided: a processing table 10 and a processing head 370. The processing stage 10 is rotatable about a vertical Z axis (rotary axis, central axis). The encoder motor 342 is used for the rotary drive unit. A wafer 9A aligned through the alignment portion 33 is provided on the processing stage 10. As shown in Fig. 97 and Fig. 98 (c), the processing head 37A is disposed on the y-axis (first axis) orthogonal to the redundant axis. Of course, the y-axis is along the radial direction of the processing stage 1〇. As shown in Fig. 97, a supply nozzle 375 having a dot shape is provided at the lower end of the processing head 37A. As shown in Fig. 99, the dot-shaped opening of the supply nozzle 375 is disposed on the y-axis. As shown in Fig. 97, the base end portion of the supply nozzle 375 is connected to the ozonator 7 (the processing fluid supply source) via the flow body supply pipe 71. A plasma processing head having a pair of electrodes can also be used as the processing fluid supply source. In addition to the dry mode such as the ozonator and the electric destruction treatment device, a wet method in which the chemical is ejected from the supply nozzle 375 as a treatment fluid can be used. In the dry type processing head 370, a suction nozzle for sucking the process 70 into a 体L body (including a by-product) is provided in the vicinity of the supply nozzle 37s, but the drawing is omitted. The processing head 370 is coupled to the nozzle position adjustment mechanism 346. Nozzle position adjustment 107857.doc 1284369 The state has a feeding motor and a linear motion device, etc., so that the processing head can be supplied. The spray back 375 slides along the y-axis to adjust the position (refer to Figs. 99(a), (4) to (0). The processing head 37〇 and the supply nozzle 375 can be moved only along the x-axis and restrained in other directions. The processed wafer 9 has various sizes. The processing head is matched with the size, and the position adjusting mechanism 346 adjusts the position in the y-axis direction to be disposed opposite to the wafer outer peripheral portion 90a. Further, the position adjusting mechanism 346 The control unit 35 駆 is synchronized with the rotation operation of the processing stage W. The control unit 35 记忆 stores the basis processing; the rotation angle of the table 10 should set the position information of the processing head 37G even to move: and the speed Specifically, as shown in FIG. 1A, when the rotation angle of the processing load (4) is the first rotation angle range ^, the position of the processing head 疋 ' Μ its location ' is the second rotation angle range ^ Capture, move the processing head 370 to set its direction and speed. At the second time, the rotation angle of the processing stage 10 is determined from the _ to the table with the triangle of Figure 99! The reference point on the j 〇ρ plane observation angle is set in the clockwise direction Further, the first-rotation angle range φι is set from the self-twisting degree to the center angle of the circular outer peripheral portion 91, which is the target range of the 疋 疋 疋 。 。. The circular outer peripheral portion 91 passes through the y-axis. The first square turning angle range φ2 is set in a range from "1 to 36 degrees. The width of the second rotating angle range φ2 (360~φ9ι) is exactly the same as the orientation plane. The central angle Φ93 of % (refer to Fig. 101) is such that the angular range φ2 corresponds to the period in which the orientation plane % crosses the y-axis. 107857.doc -129- 1284369 The fixed position of the supply nozzle 375 in the rotation angle range Φι is set equal A place (the self-rotating axis overlaps with the y-axis crossing point of the crystal portion 91.

The r puller/twist angle range is small. The 2nd part moves along the y-axis along the y-axis to the direction of the origin, and moves in the direction of the second angle range, and the second half is along the y. The axis is set in the positive direction (the direction away from the rotation axis z (1) (4). The moving speed v, when the rotation speed of the processing stage 1G is 〇1G, the first half and the second half are set to (xdxco〇)/ Φ93 (2xdxQ10xr)/L93) The depth d of the plane to the plane 93, the length of the L93 system (refer to Fig. 1〇1) is not set as the equation (1): the moving speed v (the slope in Fig. 10) is set to the processing stage The rotation speed ωι〇 is proportional. The above-exemplified radius r=100 mm, the orientation plane length L93=55 mm~6〇, in the case of the wafer with the regulation, when the number of revolutions is about 1 joint, the processing head speed v of the rotation angle range Φ2 is about v=丨.5 mm/sec~〗·6 _/sec. When the unnecessary film 92 of the outer peripheral portion of the wafer 9 is removed by the wafer processing apparatus having the above-described orientation flat corresponding mechanism, as shown in FIGS. 98(a) and (b), the wafer 90 to be processed is machined. The arm 320 is removed from the PCT 31 and placed on the alignment stage 332. At this time, usually, the wafer 9 is eccentric to the alignment stage 332, and the maximum amount a of the self-supporting stage 332 is deviated by 18 degrees from the minimum point 13. The stage 332 is rotated once under the swearing, and at this time, the maximum protrusion a and the amount of protrusion and the minimum protrusion b and the amount of protrusion thereof are detected by the non-contact sensor of the aligning unit 331. Specifically, the outer circumference of the wafer is 9〇a or more 107857.doc •130· 1284369

The fork light benefit and the light receiver are sandwiched from above and below to measure the minimum value of the received light amount and the ^large value' and the rotation angle of the stage 332 at this time. At the same time, the position of the orientation flat 93 is also detected by measuring the angle of rotation of the stage 332 when the received light swells discontinuously. Based on the measurement results, the centering (alignment) of the wafer is performed by the robot arm. That is, only the wafer 9 〇 is moved by the distance between the maximum projection amount and the minimum projection amount by 1/2 from the maximum projection to the minimum projection. The wafer can be moved 9 移动 while moving, and the stage 332 can also be moved. In addition, on the same day, the orientation plane 93 is carried in the direction indicated. 332 Next, as shown in Fig. 98(c), the wafer % is transported to the processing unit 34G' by the robot arm 32, and is placed on the processing stage 1G. Since the wafer 90 undergoes the above alignment operation, the process stage 1() can be properly aligned with the center. Alternatively, the wafer 90 can be directly transferred from the g31() to the processing carrier (4), and the same alignment (centering) as described above can be performed on the processing stage 10. For example, the stage 332 is aligned. ^ When the wafer 90 is set to the processing stage 1 , the processing stage is replaced. In the same direction as the center, the m-direction plane 93 faces the designated direction. As shown in Fig. 100 and Fig. 99 (4), in the present embodiment, the left end portion of the orientation plane is oriented in the direction of the reference point of the processing stage 10 + point 〇 P. The reference point 10p of the processing stage 10 is placed on the axis in an initial state (at the start of processing). The soil continues as shown in Fig. 99 (4), and the position adjustment mechanism 346 adjusts the position of the wafer 90 in the y-axis direction. Thereby, the supply nozzle 375 is disposed to face the wafer outer peripheral portion 9A. This embodiment is disposed in a position that is disposed by the orientation flat end portion 93a and the circular outer peripheral portion 91. The use portion 107857.doc 131 1284369 and then the ozone generated by the ozonator 7 is supplied to the treatment head 37A via f7l, and the reaction is carried out from the supply (4) m of the ozone spray to the outer peripheral portion of the wafer. Thereby, the unnecessary film 92c° can be removed while the ozone is being ejected, and the processing stage 1 is rotated by a certain number of revolutions around the rotating shaft (2 axes) by the encoder motor (4). The direction of rotation is as shown in the head of Figure 99 (4), forming a plane observation clockwise direction. Thereby, the wafer 90 is rotated in accordance with the time in (4) to (1) of the figure, and the ozone ejection portions are sequentially transferred in the circumferential direction, and the wafer periphery can be sequentially removed in the circumferential direction: 9〇a Film 92C is required. In the figures (b) to (1), the portion of the wafer outer peripheral portion 90a in the form of a hatched line indicates the portion after the unnecessary film 92c is removed. The removal step of the undesired film is further detailed. The control unit 350 drives the position adjustment mechanism 346 in synchronization with the rotation of the processing stage U) in accordance with the setting data corresponding to the above-described Fig. 1A, and supplies the nozzle 375 to the position adjustment processing head 37G. That is, as shown in Fig. (10), when the processing rotation (four) degree is the 丨, the supply nozzle is still pre-determined on the same point as the radius rA of the wafer 90. Thereby, in the period in which the circular outer peripheral portion 91 of the household h'' passes through the y-axis as shown in Figs. 4(4) to 4(4), the supply nozzle 可使 can be accurately directed toward the circular outer peripheral portion 91. Therefore, the ozone can be surely ejected to the circular outer peripheral portion 91', and the unnecessary film 92c of the circular outer peripheral portion 91 can be surely removed. Then, the 'process-completed portion extends in the circumferential direction of the circular outer circumference (four) as it rotates, and then the entire area of the circular outer peripheral portion 91 is finished as shown by 圏99(4). The right end portion 93b of the orientation flat 93 reaches the supply nozzle. position. At this time, the rotation angle range is switched from the heart to ^. 107857.doc -132 - 1284369 As shown in Fig. 100, the front half of the rotation angle range Φ2 is moved in by the processing head 37, and the supply nozzle 375 is moved toward the processing stage 1A at the speed v of the above formula (1). Further, as shown in Figs. 99(e) to (g), at this time, the right side of the orientation flat 93 passes through the y-axis, and its passing position is shifted toward the side of the rotation axis (z pumping) with the rotation. The change in the crossing point is substantially the same as the movement of the supply nozzle 375 described above. Thereby, the supply nozzle 375 can be always along the edge of the right portion of the orientation flat 93, and the unnecessary film 92c of the portion can be surely removed. • As shown in Fig. 〇0, the supply nozzle 375 at the midpoint of the rotation angle range eh is moved from the position of the circular outer peripheral portion 91 to the approximate position of the axis to the processing stage 1 The same amount as the depth 4 of the orientation plane 93. At this time, as shown in Fig. 99 (g), the orientation flat 93 is orthogonal to the 7-axis, and the exactly intermediate portion of the orientation flat 93 passes through the position of (r_d) on the y-axis. Therefore, the supply nozzle 375 is aligned with the intermediate portion of the orientation flat 93, and the unnecessary film 92c at the intermediate portion of the orientation flat 93 can be surely removed. As shown in Fig. 100, in the middle of the rotation angle range, the feed nozzle is reversed. The movement direction of the 3J5 'rotation angle range is recalled. The latter half is moved from the processing stage (4) away from the direction. The moving speed is the same as the first half (the above) The speed of equation (1) is V). At this time, as shown in Figs. 99(g) to (1), the left side of the plane % crosses the y-axis 'the traversing point thereof is shifted in the positive direction of _ with the rotation. The change in the crossing point substantially coincides with the movement of the supply nozzle 375 described above. By this, the supply nozzle 375 can be surely removed along the edge of the left side of the plane 93 to remove the unnecessary portion of the film 92c. Thus, in addition to the circular outer peripheral portion 91 of the wafer 90, it is also possible to completely remove the unnecessary film Me from all the outer regions of the orientation flat (four). WS57.do( •133- I284369 As shown in Fig. 99(1), when the rotation angle is exactly 360 degrees, the supply nozzle 375 returns to the original position. The undesired film removes the processed wafer 9〇 to the robot arm 32. The processing cartridge 10 is taken out and sent back to the crucible 310. The circular processing device can be corresponding to the orientation plane by sliding the processing head 370 in the y-axis direction, in addition to the size of the wafer 90. Therefore, the entire drive system of the processing unit 340 only needs one sliding axis (two axes and one rotating axis (Z axis), and the structure can be simplified. 1 Orientation of the orientation plane 93 in advance The specified direction 1 〇p of the stage W is processed, and the position adjustment supply nozzle 7 5 'results to supply the squirt 3 7 $ — for the mouth to the plane 93 by synchronizing with the processing stage 〇 heart 0 Even if the film control process is not performed at the same time as the unneeded film removal process, the feedback can be 'can be simplified as shown in Fig. 102, and the mode of the arc can be gradually lowered in the first half of the range φ2'. Rotation angle range during corner processing Μ = progressively increasing orientation The moving speed of the face 375. Thereby, the first m of the nozzle 93 can be supplied to the first m, so that the movement of the processing 370 and the orientation plane "the change of the position of the tooth" is more surely along the orientation plane. 93. The supply nozzle 375 can be supplied to the nozzle at the notch of the outer periphery of the wafer. The supply nozzle can be '3' in the first axis. It can be moved. It can be moved, and the entire processing head has no high temperature. In the case where the lower processing rate is increased, the heater can be in the position of μ. The heater must be a non-107857.doc * 134-1284369 contact heater such as a heat treatment unit in the heat treatment of the c. In addition, the adjacent suction And A 〃 The inside of the handle carrier is set to absorb heat from the center of the wafer and is cooled by the heat absorbing mechanism. The treatment fluid is not limited to the film of the odor and the wet or dry type, and the film 92c is not required. Even liquid. Μ 'The gas that selects the various components is shown in Figure 1〇3~Fig. The adjustment mechanism 346 is adjusted in position on the X-axis. 2, FIG. 104 does not have a wafer outer circumference position measuring device (4) disposed on (fourth). The wafer outer circumferential position measuring device 341 is moved to a measuring position approaching the rotating shaft 2 by an advance/retract mechanism (not shown) (Fig. The solid line in 105(4)) can advance and retreat on the y-axis between the retracted position (the assumed line in Fig. 105(4)) in the direction away from the self-rotating axis 。. The wafer, the peripheral position measuring device 341 is optical. The non-contact sensor is not omitted. The non-contact sensor is composed of: a light projector that outputs a laser, and a light receiver that receives the laser. The light projector and the light receiver are sandwiched from the upper and lower sides. It is disposed so as to be disposed on the outer peripheral portion 90a of the wafer 90 on the stage 10. The laser light from the light projector is shielded according to the degree of protrusion of the outer periphery of the wafer, and the amount of light received by the light receiver changes. Thereby, the position of the outer peripheral portion of the wafer can be detected (further detecting the eccentricity of the wafer). In Figs. 104 and 105, the pattern of the orientation plane and the groove of the outer periphery of the wafer is omitted. As shown in Fig. 104, the alignment mechanism 300 is not provided in the apparatus. The control unit 350 performs the following control operations (see the flow chart of FIGS. 1 and 6). 107857.doc -135- 1284369 As shown in Fig. 104(a), the wafer to be processed 90 is taken out from the robot 32 (step 101)'. As shown in the figure (b), set, suck On the stage (7) (step 1〇2). Since the alignment operation is not performed, the wafer % usually has a plurality of eccentricities on the stage 10. Next, the rotation of the stage 10 is started (step 103). The direction of rotation is shown by the arrow curve in Figure i〇5(a), which forms a clockwise direction as viewed in plan. Therefore, the processing head 370 is disposed on the downstream side by the wafer outer peripheral position measuring device 34 1 ' disposed 90 degrees apart in the 2 rotation direction. Further, as shown by the open arrow in FIG. 105(a), the wafer outer peripheral position measuring device 341 is advanced from the retracted position to the measurement position along the y-axis (step sentence, and the processing head 37 is retracted along the x-axis. The position proceeds to the processing execution position (step 105). Continuing, the wafer peripheral position measuring device 341 measures the crossing point on the y-axis of the wafer outer peripheral portion 9A (step 110). As will be described later, in this step, The position of the outer peripheral portion of the wafer passing through the X-axis is calculated before the cycle of the rotation period of the carrier 10. Next, after the step lu is judged, the process proceeds to step 112, and the position adjustment mechanism 346 is used for processing. The supply nozzle 375 of the head 37 is located at the position on the x-axis which is the same value as the measurement value of the y-axis passing point in the above step no. The time at which the supply nozzle 377 is located at its place is taken as the step of the step 丨After the cycle, as shown in Fig. 105 (4), when the measured value of step 11〇 is r]-] of the y-axis, as shown in Fig. 105(b), the supply nozzle after one-fourth of a cycle is located on the X-axis. In this way, in the outer peripheral portion of the wafer 9 〇a, the y axis is at the step 〖^ When you rotate 9 degrees and cross the parent axis, you can set the feed axis 375 to 107857.doc -136- !284369 at the parent axis. Since there is a time margin of one-fourth of the cycle, the feedback can be confirmed. The wafer outer peripheral position measuring device 341 and the control unit 35A constitute a "calculation unit for the position where the outer peripheral portion of the first axis is different from each other at the time of the wafer." Fig. 1〇5(a)'(b)' (c) '(d) sequentially displays the state of each of the four-minute cycles. In the figures (8) to (4), the "fake ray of the dummy ray is displayed in the state before one cycle.

At the same time, the ozone gas of the ozonator 70 is supplied to the processing head 370' via the tube 7 to be ejected from the supply nozzle 375 (step 113). Thereby, ozone can be ejected to the periphery of the wafer outer peripheral portion 90a2X, and the unnecessary film 9 2 c at this point can be removed. The step 1 i 3 in which the ozone starts to be ejected is carried out only in the initial process' and then the ozone ejecting is continued. Then, returning to step 11, the measurement of the position of the supply nozzle 375 (step 112) of the outer circumference of the wafer is performed by measuring the position of the outer circumference of the wafer (step m). . In this case, as shown in Fig. 1〇5(4) to (4), the outer peripheral portion of the wafer can be sequentially removed in the circumferential direction as the wafer % rotates, and the unnecessary film 92c is removed. In the figures (b) to (4), the hatched portion of the outer peripheral portion of the wafer indicates the portion after the unnecessary film 92c is removed. Even if the wafer 90 is distorted, it can be adjusted with the contour position of the outer peripheral portion 9〇a. The nozzle 375' can surely remove the unnecessary film 92. . Therefore, it is possible to simplify the structure of the apparatus without providing the alignment mechanism for eccentricity correction. In addition, after the wafer 9G is taken out from the E31G, it can be directly disposed on the stage 1〇 without the alignment mechanism, and the unnecessary substance removal processing can be performed immediately, and the 107857.doc -137-1284369 object can be omitted. Except for the previous abundance + R ^ + quasi-production, it is possible to shorten the overall processing and due to the processing time with each basket. The π X-axis crossing point is the same as the position adjustment of 375 and 喑φ # U 仃 仃 supply nozzle sprays ozone gas, so it can enter. U" When the film is sprayed at the beginning of 4113, the wafer 90 is rotated once, and the entire area of the circumference of 曰曰D °P 9〇a is not required to be # bundle (refer to Figure (10) (4)) . In the judgment of the film removal processing in A, 1735111, "Is Crystal® full-circle processing finished?", it is judged as "Yes". J &lt; force off thereby stopping the discharge of ozone gas from the supply nozzle milk (step 120). Then, as shown in Fig. 105 (4), the processing head 37 is retracted to the retracted position (step (2)), and the wafer outer peripheral position measuring device 341 is moved back to the retracted position (step 12 2). Further, the iV stop table 1 Rotate (step 123). Then, the stage 10 is detached from the wafer 9 (step 124). Then, the robot arm 320 carries out the wafer 9 from the stage 1 (step 125), and returns to the cassette 310 (step 126). The wafer outer circumferential position measuring device 341 is disposed 90 degrees from the supply nozzle to the upstream side in the rotation direction of the stage. However, the wafer outer circumferential position measuring device 341 is not limited to 9 degrees, and may have a larger angular deviation or a small angle deviation. When the wafer outer peripheral position measuring device 34 i detects the notch portion such as the orientation plane and the groove of the wafer to calculate the X-axis crossing point, the edge of the notch portion can be processed. The control operation shown in the flow chart of Fig. 106 is performed simultaneously with the position calculation of the outer peripheral portion of the wafer 9〇a 107857.doc -138-1284369, and the nozzle position adjustment and the gas ejection are performed simultaneously, but as shown in the figure It is also possible to perform nozzle position adjustment and gas ejection at the position of the entire circumference of the wafer at the entire circumference of the π king, ''sigma beam'. That is, in FIG. 107, after the positions of the wafer outer peripheral position measuring device 341 and the processing head 370 are set in steps 104 and 105, the wafer is rotated by one time, and the wafer outer peripheral position measuring device (4) is used. Measuring the location of the peripheral portion of the wafer on the x-axis, ...e and obtaining the position information of the entire circumference of the wafer 90a

(Step 1 (5). That is, the data of the y-axis crossing point of the wafer periphery corresponding to the rotation angle of the stage ig is obtained. When the data is deviated by the degree, it becomes the rotation angle corresponding to the stage 1G ( The calculation data of the outer peripheral portion of the wafer, such as the a-axis crossing point, is stored in advance in the memory of the control unit 350. The H' of the above calculation data can also calculate the wafer 9G to the stage. 10 eccentric core direction' and use the eccentric material to replace the position of the whole week = that is, 'the error when placing the wafer 90 on the stage ι in step 101 △ as shown in Fig. 1G4(b) It is shown that there is a self-loaded column in the outer peripheral portion of the wafer, which is the most A4a and the minimum ❹ offset of 18G degrees. The maximum protrusion of the outer circumference of the wafer is the largest protrusion &amp; and its protruding amount and the smallest protruding core square, 'two= The direction of the protrusion b to the maximum protrusion a is the data of the protrusion amount of the big dog outlet a and the protrusion amount of the minimum protrusion point b. That is, the temple core amount β is based on the eccentricity data and the wafer 9. The radius juice ^ corresponds to the rotation angle of the stage 10 (the taste of each circumference portion 90a passes through the position β N) · 'Entering step U6, according to the above calculation data, to position adjustment machine 107857.doc -139-

1284369 The position adjustment processing head 37 is further supplied to the nozzle in the X-axis direction. The second, that is, according to the rotation angle of the stage 10, the wafer % in the rotation angle thereof is set to the supply nozzle 375 by the calculation point of the crossing. With this position adjustment, :: a total of nozzles 375 spray ozone. Thereby, the unnecessary film 92c at this point can be surely removed regardless of the wafer or the ozone that can be ejected to the outer circumference of the wafer. Tooth, continue to perform the nozzle position adjustment of this step 11 6 before the 〇 round 9〇 turns, and spray ozone. Thereby, the unnecessary film 92c can be removed by covering all the regions 3 in the circumferential direction of the peripheral portion 9a of the wafer. Therefore, it is judged as "yes" in the judgment of "whether or not the whole week processing is completed?" in step 117. The day and then steps are the same as in Figs. 1 and 6 (steps 120 to 126). (Industrial Applicability) The invention is applicable to a process for semiconductor wafers and a film for removing an outer periphery of a liquid crystal display substrate process. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a front cross-sectional view showing a substrate peripheral processing apparatus ' according to a first embodiment of the present invention, taken along line u of Fig. 2; Figure 2 is a plan view of the above device. Figure 3 is an enlarged view. Fig. 4(4) showing the film removal processing portion of the above apparatus shows a result of an experimental example of a wafer having a distance from the vicinity of the heated portion of the outer edge of the wafer to the inner side in the radial direction by the same apparatus as that of Fig. 1. . Fig. 4 (8) shows a measurement temperature diagram in which the position closer to the heated portion than (4) (very close to 107857.doc • 140-1284369 heated portion) is taken as the origin of the horizontal axis. Fig. 5 is a graph showing the results of other experimental examples of the wafer temperature at a distance from the vicinity of the heated portion to the inner side in the radial direction from the outer edge of the wafer by the same apparatus as Fig. 1. Figure 6 is a front elevational view of the stage of the changing aspect of the heat absorbing mechanism. Figure 7 is a front elevational view of the stage of the changing aspect of the heat absorbing mechanism. Figure 8 is a plan view of the stage of the changing aspect of the heat absorbing mechanism. φ Figure 9 is a plan view showing a modification of the heat absorbing mechanism of the stage. Figure 10 (a) is a plan view of the stage of the changing aspect of the heat absorbing mechanism. Figure 10 (b) is a front view of the stage of Figure 10 (a). Figure 11 is a front elevational view of the stage of the heat sink using a modified version of the Peltier element. Fig. 12 is a plan view showing a stage in which only a heat absorbing mechanism is provided in the outer peripheral region. Fig. 13 is a side view showing the stage of Fig. 12 and the like. Fig. 14 is an enlarged plan view showing the periphery of the groove on the outer circumference of the wafer, (a) showing the case where the irradiation spot diameter of the laser irradiation unit is kept constant, and (b) showing the state of expanding the irradiation spot diameter at the position of the groove. (c) shows the state after the processing of (13). Fig. 15 is a front view showing the state in which the focus of the laser irradiation unit is aligned on the outer circumference of the wafer, and the irradiation spot diameter is formed to be 1 mm. Fig. 1 is a front view showing the state in which the laser irradiation unit is irradiated on the outer circumference of the wafer and the state of the focus processing is adjusted by 3 mm. The diagram illustrates the front view of the laser irradiation unit at a radius of 7 μm of the wafer, which is processed in a manner corresponding to a processing width larger than the irradiation spot diameter. 107857.doc -141 - 1284369. Figure 18 (a) is a plan view of the stage inserted into the vacuum chuck mechanism. Figure 18 (b) is a front cross-sectional view of the stage of Figure 18 (a). Figure 19 (a) is a plan view of a stage in which the vacuum chuck mechanism is changed. Fig. 19 (b) is a front cross-sectional view showing the stage of Fig. 19 (a). Figure 20 is a plan view showing a stage of a modification of the vacuum suction chuck mechanism. Figure 21 is a front cross-sectional view of the stage of Figure 20. Fig. 22 is a plan view showing a stage in which a modification of the chuck mechanism is provided only in the outer peripheral region. Figure 23 is a front cross-sectional view of the stage of Figure 22. Fig. 24 is a front cross-sectional view showing a substrate peripheral processing apparatus according to a modification of a reactive gas supply mechanism. Fig. 25 is a front cross-sectional view showing a substrate outer peripheral processing apparatus according to a modification of a reactive gas supply mechanism. Fig. 26 is a front cross-sectional view showing a substrate outer peripheral processing apparatus according to a modification of a reactive gas supply mechanism. Fig. 27 is a front sectional view showing a substrate peripheral processing apparatus according to a modified embodiment of the arrangement relationship between the radiant heater and the reactive gas supply means. Figure 28 is a front cross-sectional view showing the film removal processing portion of the apparatus of Figure 27 in an enlarged manner. Fig. 29 is a front sectional view showing a substrate outer peripheral processing apparatus according to a modified embodiment of a reactive gas supply source of a reactive gas supply means. Fig. 30 is a front sectional view showing a substrate peripheral processing apparatus according to an embodiment of the radiant heater and the reactive gas supply means. 107857.doc • 142- 1284369 Figure 31 is a plan cross-sectional view of the above apparatus taken along line χχΧΙ to XXXI of Figure 30. Fig. 32 is a graph showing experimental results of measuring the wafer temperature for the distance from the vicinity of the heated portion of the outer edge of the wafer to the radially inner side by means of the same apparatus as Fig. 3A. Figure 33 is a graph showing the half-life of ozone decomposition to temperature. Fig. 34 is a front cross-sectional view showing the substrate peripheral processing apparatus in which the nozzle cooling device and the inert gas supply unit are changed. Figure 35 is a front cross-sectional view showing the substrate peripheral processing apparatus of the embodiment in which the radiant heater is changed in Figure 34. Fig. 36 is a front sectional view showing a substrate peripheral processing apparatus of a modified embodiment of a nozzle cooler or the like. A front cross-sectional view of the substrate peripheral processing apparatus of the '37 series-exposed phase gas addition gas-changing embodiment. Figure 38 is a front elevational view showing an embodiment of an additional light-transmitting fence. #图39 is a front view showing an embodiment in which an optical system of a radiant heater uses a plurality of fiber optic environments. Fig. 40 (4) is a front view of the discharge port forming member having the shouting forming portion. Fig. 40 (8) is a side cross-sectional view showing the above-described discharge port forming member having a swirling flow forming portion. Fig. 4 is a plan view showing a substrate peripheral processing apparatus having a processing head having a discharge nozzle and an exhaust nozzle. ' Earth Figure 42 is a front view of the substrate peripheral processing device of Figure 41. 107857.doc -143 - 1284369 Fig. 43 is a plan view showing a modification of a peripheral processing device having a discharge nozzle and an exhaust material. (4) Base of the head Fig. 44 is a front view of the substrate peripheral processing apparatus of Fig. 43. Fig. 45 (4) is an enlarged plan view showing the nozzle portion of the apparatus of Fig. 43. Figure (b)

Fig. 46 (4) is a plan view showing the results of measurement of the temperature distribution on the side surface of the wafer surface when the wafer is partially heated on the back side of the wafer by the laser. Fig. 4) shows the measurement result of the circumferential direction of the wafer back surface in Fig. 46 (4). Fig. 47 is a plan view showing another modification of a peripheral processing apparatus of a material having a processing head having a discharge nozzle and a discharge nozzle. Soil Figure 48 is a front view of the substrate peripheral processing apparatus of Figure 47. Fig. 49 is a schematic plan view showing a wafer peripheral processing apparatus in which a suction nozzle is disposed outside the radius of the wafer. Fig. 50 is a plan view showing a schematic configuration of a wafer peripheral processing apparatus in which a suction nozzle is disposed between a wafer and a discharge. Fig. 5 is a plan view showing the periphery of the outer peripheral portion of the wafer of L1__ of Fig. 50. Portion 52 is a plan view of the substrate peripheral processing apparatus in which the irradiation direction is from the upper side of the wafer and obliquely downward from the outside of the radius toward the outer peripheral portion of the wafer. Figure 53 is a front elevational view of the substrate peripheral processing apparatus of Figure 52. Fig. 54 is a front elevational view showing the irradiation unit of Fig. 53 and the outer peripheral portion of the wafer in an enlarged manner. Fig. 55 is a cross-sectional view showing the outer peripheral portion of the wafer after the film removal process is not required. I07857.doc -144- 1284369 Figure 56 is a front view of the illumination unit from the side of the wafer toward the wafer. Fig. 57 is a front view showing the irradiation unit from the lower side of the wafer in the irradiation direction and obliquely upward from the outer side of the radius toward the outer peripheral portion of the wafer. Figure 58 is a front elevational view of a substrate peripheral processing apparatus having a tilting irradiation unit and a vertical irradiation unit. Fig. 5 is a front view of a substrate peripheral processing apparatus having a mechanism # for moving an irradiation unit in an arc shape on the upper side of the wafer. Fig. 60 is a front view showing a substrate outer peripheral processing apparatus for causing an irradiation unit to move in an arc shape on the lower side of the wafer. Θ 61 series / σ The LXI-LXI line of Fig. 62 shows a longitudinal sectional view of a substrate peripheral processing apparatus having a shank type nozzle. Figure 62 is a longitudinal cross-sectional view of the processing head along the line ί π χ π of Figure 6 . Figure 63 is a plan sectional view showing the substrate peripheral processing apparatus along the LXIII_Lxin line of Figure 6; ® Figure 64 is a plan sectional view of the substrate peripheral processing apparatus along the LXIV-LXIV line of Figure 61. Figure 65 is a perspective view of the above-described shank type nozzle. Fig. 66 is an enlarged cross-sectional view showing the state of film removal processing on the outer peripheral portion of the wafer of the apparatus of Fig. 61; Figure 67 is a plan view showing the substrate peripheral processing apparatus of Figure 61. Fig. 68 (a) - (c) are plan views showing an example of setting of the arrangement relationship between the short cylindrical portion of the shank type nozzle and the outer edge of the wafer. Fig. 69 is a front view showing the experimental setup of the above-described handle-type nozzle for the light transmittance measurement experiment 107857.doc -145-1284369. Fig. 70 is a perspective view showing a modified state of the above-described shank type nozzle. Fig. 71 is an enlarged cross-sectional view showing the state of film removal processing on the outer peripheral portion of the wafer by the substrate peripheral processing apparatus using the shank type nozzle of Fig. 7; Fig. 72 is a longitudinal sectional view showing a modification of the exhaust system of the substrate outer peripheral processing apparatus having the sill-type nozzle along the line LXXII-LXXII of Fig. 73; Figure 73 is a longitudinal cross-sectional view of the above apparatus taken along the line of Figure 72. Fig. 74 is a longitudinal sectional view showing a substrate outer peripheral processing apparatus including a long-nozzle nozzle in place of the handle-type nozzle along the line of Fig. 75iLXXIV_LXXIV. Figure 75 is a longitudinal sectional view of the processing head of the above apparatus taken along the line LXXV-LXXV of Figure 74. Figure 76 is a perspective view of the above-described long nozzle. Fig. 77 is an enlarged cross-sectional view showing the state of film removal by the peripheral portion of the wafer by the apparatus of Fig. 74. Fig. 78 is an enlarged cross-sectional view showing the outer peripheral portion of the wafer in which the organic film and the inorganic film are stacked. (4) shows the state before removal of the organic film and the inorganic film, (8) shows the state before removal of the organic film and before the removal of the inorganic film, (4) shows The state after removal of the organic film and the inorganic film. Fig. 79 is a plan view showing the schematic configuration of a substrate peripheral processing apparatus for the two film laminated wafers of Fig. 78; Fig. 80 is a front view showing the substrate peripheral processing apparatus for the two film laminated wafers. 107857.doc 146·1284369 Fig. 81 is a plan view showing a second processing head (gas guiding member) of the substrate peripheral processing apparatus for the two film laminated wafers. Figure 82 is a cross-sectional view showing the second processing head in the circumferential direction (length square image) along the line LXXXII-LXXXII of Figure 81. Figure 83 is a cross-sectional view of the above second processing head (gas guiding member) taken along line 81iLxxxm-Lxxxni of Figure 81i. Fig. 84 is a view showing the results of experiments using the second processing head similar to that of Fig. 81, and showing the film thickness after the material removal treatment is performed for the distance from the outer end portion of the wafer to the inner side in the radial direction. Fig. 85 is a schematic structural view showing a modification of the substrate peripheral processing apparatus for the above two film laminated wafers. Fig. 86 (a) is a front view showing a schematic configuration of another modification of the substrate peripheral processing apparatus for the two film laminated crystals in the state of the organic film removing step. Fig. 86 (b) is a front view showing the apparatus of Fig. 86 (a) in the state of the inorganic film removing step. Figure 87 is a longitudinal cross-sectional view showing a modification of the stage structure having a center spacer. Fig. 8 is a longitudinal sectional view showing, in an enlarged manner, a boundary portion between the fixed cylinder and the rotary cylinder of the stage structure of Fig. 87. Figure 89 (a) is a horizontal sectional view of the shaft assembly of the stage along the line LXXXIXa_LXXXIxa of Figure 88. Figure 89 (b) is a horizontal sectional view of the assembly of the vehicle along the stage of Figure 88iLXXXIXB-LxxxIXB. 107857.doc -147- 1284369 Circle 89 (C) is a horizontal sectional view of the shaft assembly of the stage along the line 88iLXXXIXC_LXXXIXC. Figure 90 is a front cross-sectional view schematically showing a modification of the second processing head. Figure 91 is a plan view of a second processing head (gas guiding member). Figure 92 is a plan view showing the gas guiding member of the extended circumference. Figure 93 is a plan view showing a gas guiding member that shortens the circumference.

Fig. 94 (a) to (e) are cross-sectional views showing a modification of the cross-sectional shape of the gas guiding member. Figure 95 is a plan view showing a gas guiding configuration which can correspond to a film to be heated. Figure 96 is an enlarged cross-sectional view taken along the line XCVI_XCVI of Figure %. Figure 97 is a side cross-sectional view showing a processing portion of a substrate peripheral processing apparatus which can correspond to an orientation flat or groove of the outer circumference of the wafer. Figure 98 is a plan view of the apparatus of Figure 97, (4) shows the state of the wafer taken out from the crucible' (8) shows the state of the aligned wafer, (4) shows that the wafer is placed in the processing diagram 99 (4) ~ (1) is represented by the time shown in Figure 97 A plan view of the unnecessary film removal treatment of the outer peripheral portion of the wafer is performed in the portion. Fig. 100 is a diagram showing the setting information of the supply position of the control unit stored in the nozzle position adjusting machine. Figure 101 is a plan view showing the orientation of the wafer in an exaggerated manner. Fig. 102 is a view showing a processing unit of a peripheral device in which a modification of the setting information of Fig. 100 is illustrated. Fig. 103 is a side cross-sectional view showing the outside of the wafer, _57.doc - 148 - 1284369. Fig. 104 is a plan view showing the apparatus of Fig. 103, (a) showing the state in which the wafer is taken out from the tenth, and (b) showing the state in which the wafer is placed on the processing portion. Fig. 105 (3) to (6) are plan views showing the case where the unnecessary film removal processing of the outer peripheral portion of the wafer is performed in the processing portion of the apparatus of Figs. 1 to 3 and Figs. Figure 106 is a flow chart showing the operation of the devices of Figures 1 and 3 and 104. Fig. 1 is a flow chart showing a modification of the operation of the apparatus of Figs. 1 to 3 and 104. Figure 1 is a graph showing the relationship between etching rate and temperature of an organic film by ozone. [Description of main components] 10 Stage 10a Support surface 13 Suction hole 14 Suction path 15 Suction groove 16 Annular groove 17 Connection groove 20 Laser heater (radiation 乂 21 Laser light source 22 23 Irradiation unit (irradiation unit) Fiber Optic Cable (Optical Transmittance) 30 Electric Discharger (Reactivity | 36 Ejection Nozzle 36a Ejection Port 107857.doc • 149 - 1284369

41 Refrigerant chamber (endothermic mechanism) 41C Annular cooling chamber (endothermic mechanism) 41U5 41L Refrigerant chamber (endothermic mechanism) 46 Refrigerant passage (endothermic mechanism) 47 Annular path 48 Connecting path Pe Peltier element (endothermic mechanism) 70 Ozonation (Reactive gas supply source) 75 ejection nozzle 76 suction nozzle 90 wafer (substrate) 90a wafer outer peripheral portion 92 organic film 93 notch portion of groove, orientation flat surface, etc. inorganic film 92c, 94c wafer periphery Film of the part (required material) 100 First processing head 110 Stage body 111 Center spacer 120 Infrared heater (radiation heater) 121 Infrared lamp (light source) 122 Cluster optical system (illumination unit) 140 Rotary drive motor (rotation) Drive mechanism) 150 rotating cylinder 107857.doc -150- 1284369

160 shank type nozzle 162 introduction portion 161 cylindrical portion 161a temporary stagnation space 163 cover portion 180 fixed cylinder G1, G2 packing sheet 200 second processing head (gas guiding member) 201 insertion port 202 guiding path 204 light transmitting member 346 nozzle position adjustment Mechanism 350 Control unit 375 Supply nozzle (discharge nozzle) P Process position c Annular surface 107857.doc -151 -

Claims (1)

1284369 X. Patent application scope · 1 · Substrate peripheral treatment device, JL surname (&amp; ^ 特征8 features: · It is a device that removes unwanted substances covering the outer peripheral portion of the substrate, air nozzle, The reactivity of the undesired material (4) is removed: the direction orthogonal to the hypothetical surface on which the substrate should be placed is two' large: the circumferential direction of the treated position of the outer peripheral portion of the hypothetical surface is described The processing position is ejected. 2 · The processing dream of claim 1 is the same as the processing. The sprinkling nozzle system includes a light transmissive material 3, such as the processing device of claim 1, J: in your view, treatment, f 皤 &amp; , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , It is inclined to the inner side. The circumferential direction is the material peripheral processing device which is opposite to the assumed surface, and is characterized in that it is sprayed against the processed position of the outer peripheral portion of the substrate to remove the cover. Unwanted substance in the aforementioned treated position And the eight-capacity suction nozzle is viewed from a direction orthogonal to the assumption that the substrate is located thereon, in a direction substantially along a circumferential direction of the processed position of the outer peripheral portion of the hypothetical surface, In the vicinity of the position to be processed, the processing device of the request ί5 is inclined from the direction parallel to the assumed surface, and the front end portion of the suction nozzle is inclined toward the assumed surface. It is characterized in that it is a device for removing unnecessary substances covering the outer peripheral portion of the base 107857.doc 1284369, and has a discharge nozzle for removing a reactive gas for an unnecessary substance, and the substrate is The hypothetical surface on which the upper surface is located is orthogonal to the processed position in the outer peripheral portion of the hypothetical surface, and is ejected toward the processed position; and 17 is perpendicular to the hypothetical surface. In the direction of observation, in the case where the discharge direction is located further downstream than the above-mentioned processed position, the vicinity of the processed position is attracted in the direction of the circumferential direction in the 隹"/σ. The processing device of the seventh aspect, wherein the front end portion of the discharge nozzle and the front end of the suction nozzle are sandwiched from the front end of the suction nozzle so as to be substantially in the circumferential direction as viewed from a direction orthogonal to the assumed surface. In a relative arrangement, the treatment of claim 7 is shocked, wherein the diameter of the suction nozzle is larger than the diameter of the discharge nozzle. In the processing apparatus of the seventh aspect, a light-emitting heater is disposed between the front end portions of the discharge nozzle and the suction nozzle, and the radiant heat is locally irradiated at the processed position. The processing apparatus according to claim 10, further comprising a rotating mechanism for relatively rotating the front nozzle and the suction nozzle, and directing the phase direction from the nozzle outlet toward the suction nozzle. The processing device of the moon clerk 11 wherein the partial radiant heater of the radiant heater is disposed between the ejection nozzle and the suction nozzle and is opposite to the ejection spray 107857.doc !284369 13. The processing package of claim 1 The aforementioned treated position is inclined to the aforementioned radiant heat. The radiant heater is irradiated in a direction toward the outer side of the radius of the substrate. The substrate peripheral processing device according to claim 10, wherein the substrate is provided with a moving mechanism, and the aforementioned Han shot in the radiant heater is provided. The heat illuminating unit moves toward the processing position and moves in a plane orthogonal to the fulcrum surface. In the case where the outer peripheral processing device of the request item 10 is provided with a stage, the substrate is disposed on the inner side of the outer peripheral portion of the outer surface of the assumed surface, and the outer peripheral portion of the base material is protruded. The substrate supporting surface is supported by abutting against the back surface of the substrate, and the stage is provided with a heat absorbing mechanism that absorbs heat from the substrate supporting surface. 1 6·—A method for treating a substrate peripherally, i.e., a method for removing an unnecessary substance covering the outer peripheral portion of the substrate, and removing a reactive gas for an unnecessary substance, The direction of the substrate is viewed as being substantially along the circumferential direction of the treated portion of the outer peripheral portion of the substrate, and is ejected toward the treated position. The substrate peripheral treatment method is characterized in that a reactive gas is sprayed to a position at a position on the outer peripheral portion of the substrate, and when an unnecessary substance covering the treated position is removed, the substrate is observed substantially along the substrate. In the direction of the suction, the vicinity of the circumferential position of the processed position to be processed from the side orthogonal to the substrate is attracted. An undesired method of the outer peripheral portion of a substrate peripheral processing material, characterized in that it is a method of removing the covering material. 107857.doc !284369 and removing the reactive gas for the unnecessary substance, as viewed in the direction orthogonal to the substrate, substantially along the circumferential direction of the processed position of the outer peripheral portion of the substrate, and to the processed position When the discharge direction is further downstream than the position to be processed, the vicinity of the processed position is attracted in a direction substantially along the circumferential direction. 107857.doc