TWI284350B - Method and device for treating outer periphery of base material - Google Patents

Abstract

A method and a device for treating the outer periphery of a base material capable of avoiding damage to the center part of the base material in a treatment for removing an unnecessary membrane from the outer peripheral part of the base material. A refrigerant chamber (41) as an endothermic means is formed in a stage (10), and a refrigerant such as water is filled therein. A wafer (90) is supported on the support surface (10a) of the stage (10). While the outer peripheral part of the wafer (90) is heated by a heater (20), a reactive gas for removing the unnecessary membrane is supplied from a reactive gas outlet (30b) to the heated portion of the wafer. On the other hand, a heat in the portion of the wafer (90) on the inner side of the outer peripheral part is absorbed by the endothermic means.

Description

[Technical Field] The present invention relates to a method and apparatus for removing an unnecessary substance such as an organic film covering an outer peripheral portion of a substrate such as a semiconductor wafer or a liquid crystal display substrate. [Prior Art] A method of coating a substrate such as a semiconductor wafer or a glass substrate for liquid crystal display with a film, an organic photoresist, a polyimide, or the like is known as a coating by a spin coating method. A method of depositing a film by CVD or PVD. However, the coating material applied by the spin coating on the outer peripheral portion of the substrate is thicker than the central portion, causing the outer peripheral portion to be convex. Further, when CVD is used for plasma CVD, since the electric field concentrates on the edge portion of the outer periphery of the substrate to cause abnormal growth of the film, the film quality of the outer peripheral portion of the substrate is different from that of the central portion, and the film thickness is larger than that of the central portion. In the case of thermal CVD using ozone (〇3) and TEOS, the resistance of the reactive gas in the edge portion of the central portion and the outer periphery of the substrate is different, and the film quality of the outer peripheral portion of the substrate is different from that of the central portion. The thickness is also getting bigger. In the process of semiconductor wafers, the fluorocarbon deposited during the anisotropic etching also spreads from the outer end surface of the wafer to the back surface and also builds up thereon. Therefore, unnecessary organic matter adheres to the outer peripheral portion of the back surface of the wafer. The film on the outer peripheral portion of such a substrate is likely to be broken when transported by a conveyor and transported in a transfer case, and dust may be generated. The problem of a decrease in yield due to the adhesion of fine particles to the wafer due to the dust / Previously, the film formed by the fluorocarbon spreading to the back side of the wafer 103065.doc 1284350 during the anisotropic etching, such as by dry The ashing process removes the oxygen from the side of the wafer surface to the back side. However, the 1qw shop will be damaged when it is subjected to dry ashing. Therefore, it is attempted to process at a low output, but the low output cannot remove the fluorocarbon on the back side of the wafer, and generates fine particles during substrate handling, which is a major cause of a decrease in yield. Previous literature dealing with the outer perimeter of semiconductor wafers:

Japanese Laid-Open Patent Publication No. Hei 5-82478 discloses that the upper and lower holders cover the central portion of the semiconductor wafer, and the outer peripheral portion is ejected, and plasma is ejected thereon. However, due to the entanglement of the holder: % is only physically in contact with the wafer, microparticles may be generated. Japanese Laid-Open Patent Publication No. Hei. No. Hei. No. Hei. No. Hei. No. Hei. No. Hei. No. Hei. : Spray plasma from the lower side to the outer periphery of the substrate. Japanese Laid-Open Patent Publication No. Hei. No. 2-264168 discloses that a wafer is placed on a stage to 'clamp and rotate, and a heater is embedded in the outer periphery of the stage, and the wafer is transferred from the back side. The outer peripheral portion is heated by contact, and a reactive gas containing ozone and hydrofluoric acid is vertically sprayed from the gas supply nozzle to the front side of the outer peripheral portion. Patent Document 5: Japanese Laid-Open Patent Publication No. Hei. No. Hei. No. Hei. No. Hei. No. Hei. No. Hei. The top of the inside of the glyph member ejects oxygen radicals to the outer periphery of the wafer, and is attracted by a suction port provided on the inner bottom side of the c-shaped member. 103065.doc 1284350 In general, in order to position the crystal and the positioning of the stage, a notch portion such as an orientation flat surface and a groove is formed on the outer peripheral portion of the wafer, and an unnecessary film attached to the edge of the notch portion is also When the removal process is performed, it is necessary to operate in accordance with the outline shape of the notch portion. The method disclosed in Japanese Laid-Open Patent Publication No. Hei No. 5-144725 is to provide a nozzle for an orientation plane different from a main nozzle for processing a circular portion of a wafer, and to use the nozzle for the orientation flat along the orientation flat portion. The linear motion is moved, whereby the directional plane portion can be processed. Patent Document 7: JP-A No. 3-188234, which is capable of aligning wafers by abutting a plurality of pins at different angles from each other. Patent Document 8: Japanese Patent Laid-Open No. 2 152051 and Patent Document 9: JP-A No. 2-4-47654, which uses an optical sensor to detect the eccentricity of a wafer by non-contact, and performs a robot arm based on the detection result. After correction, it is set on the processing stage. Japanese Unexamined Patent Publication No. Hei No. Hei. No. Hei. No. Hei. No. Hei. No. Hei. No. Hei. No. Hei. No. Hei. Japanese Patent Laid-Open No. Hei. No. Hei. No. 2003-152. JP-A-2004-47654 [Disclosure] 103065.doc 1284350 (Problem to be Solved by the Invention) The photoresist is effectively removed under normal pressure and the amount of reactive gas such as ozone is increased. However, when the entire wafer is exposed to a high-temperature atmosphere, the oxidation of copper and the change in characteristics of the Wk film occur, and the wiring and the insulating film are deteriorated, which affects the device characteristics and reduces the usability. In the above-mentioned patent documents and the like, the peripheral portion abuts the heater except for the film to be removed, but the heat is transmitted from the outer peripheral portion of the substrate to the central portion, and the central portion may be heated. Further, heating is required when an organic substance such as an organic (tetra) film such as a k film or a fluorocarbon deposited at the time of (d) is added. When the photoresist was removed as an unnecessary organic film as shown in Fig. 10, almost no reaction occurred in the vicinity of HKTC, and the etching rate near the phantom was increased. And since the 2001 material, (4) rate is roughly linear to temperature

When the heat ray is an infrared lamp or the like, the infrared ray is also irradiated to the central portion of the substrate to directly heat it, which may increase the temperature. When a counter-purified gas such as ozone is introduced into the center portion of the substrate having such a high temperature, it is also possible that (4) the film at the center portion of the substrate may be deteriorated.

(Means for Solving the Problem) In order to solve the above problems, the apparatus for removing an unnecessary substance covering the outer peripheral portion of a substrate such as a semiconductor wafer of the present invention is characterized by comprising: (a) a stage having a contact supporting substrate (b) a heater for imparting heat to a treated position at a peripheral portion of the substrate supported by the stage; (C) a reactive gas supply mechanism for supplying an unnecessary substance a reactive gas to the treated position; and (4) a heat absorbing mechanism attached to the stage and absorbing heat from the support surface 103065.doc 1284350 (see FIGS. 1 to 13 and the like). Further, the special substrate for removing the unnecessary substance covering the outer peripheral portion of the substrate contacts the branch surface of the stage, and the outer periphery of the substrate is heated to the outside, and the portion closer to the inner side is compared with the outer portion. The heat absorbing material provided on the stage is used to absorb heat, and a reactive gas for removing unnecessary substances is supplied to the heated outer peripheral portion. Preferably, the substrate is contacted and supported on the support surface of the stage, and the outer circumference of the base material is heated by the heat ray, and the portion of the outer circumference is closer to the inner portion: the heat absorption portion is provided on the stage. The mechanism absorbs heat and supplies the aforementioned reactive gas to the local position. Thereby, unnecessary substances in the outer peripheral portion of the substrate can be effectively removed. Further, even if the heat is transmitted from the outer peripheral portion to the inner portion (center portion) of the outer peripheral portion of the substrate, and the heat of the heater is directly applied, the heat absorbing mechanism can absorb the heat. By this, the film and wiring of the inner portion of the substrate can be prevented from deteriorating. Further, even if the reactive gas flows into the inner side from the outer peripheral side of the substrate, the reaction can be suppressed. This prevents damage to the inside portion of the substrate. Preferably, the support surface of the stage is higher than the base material, and the processed position of the outer periphery of the substrate is located at a position higher than the front surface of the support surface, such as a refrigerant cooling stage. The specific structure is such that a refrigerant chamber is formed inside the stage as a heat absorbing means, and a supply path of the refrigerant is connected to the refrigerant chamber (see W, Fig. 6, K7, Fig. 10, etc.). The refrigerant can be filled or circulated in the refrigerant chamber to be circulated, and can be sucked from the substrate. By 103065.doc -10· 1284350 by expanding the internal volume of the refrigerant room, you can right-and-fill the knife & heat capacity and even heat absorption capacity. Refrigerant such as water, air, and cradle & The refrigerant can be compressed and supplied to the refrigerant chamber. In this way, 』 flows to the corners of the refrigerant in a way that is spread over ten times, so that Wan Man can ask for heat absorption efficiency. Further, even if the supply strength of the refrigerant is stabilized or the supply and discharge are stopped even if it is filled, the heat absorption can be ensured by natural and convection in the refrigerant chamber. The common passage may constitute a refrigerant supply path and a refrigerant discharge path connected to the refrigerant chamber. In the inside and the back side (the surface opposite to the support surface) of the stage, a cold material path is designed as a heat absorbing means by a pipe or the like, and a refrigerant is passed through the refrigerant passage (see Figs. 8 and 9). Wait). The refrigerant passage may be formed from a portion on the side of the support surface inside the stage toward a portion opposite to the support surface (see Figs. 6, 7 and the like). Thereby, the heat absorption efficiency of the south can be improved. a chamber may also be formed inside the aforementioned stage,

The two-chamber portion constitutes a passage portion on the downstream side of the refrigerant passage (see Figs. 6 and 7 and the like). (d) the first chamber portion and the second chamber portion 'on the side opposite to the support surface' and the first and second chamber portions are in communication with each other, and the first chamber portion constitutes a material on the preceding material medium, the aforementioned Further, the refrigerant passage may be directed from the outer peripheral portion of the stage to the center (four) W (see Fig. 9, etc.). #此' can be sufficiently cooled to the side close to the outer peripheral portion of the base, and it can surely absorb the heat from the outer peripheral portion of the substrate, and can surely sigh the film at the center. The s-new refrigerant passage is formed into a spiral shape (see Fig. 8, etc.). Or having: a plurality of annular paths forming a concentric shape, and being disposed between the adjacent annular paths in the radial direction, and connecting the paths of the circular paths 103065.doc -11 · 1284350 (refer to the figure) 9 etc.). The heat absorbing means may include a Peltier element (see Fig. 11) provided in the stage with the heat absorbing side facing the support surface. The Peltier element can be placed close to the support surface. In addition, a fan and a heat sink for assisting heat dissipation may be provided on the back side (heat dissipation side) of the Peltier element. The heat absorbing mechanism may be provided in substantially all of the stages of the stage (see Figs. 1 to 11 and the like). Thereby, heat can be absorbed from substantially the entire support surface.

The heat absorbing mechanism may be provided on at least the outer peripheral side portion of the stage, or may not be provided on the inner side (see Figs. 13, 21, and 23, etc.). The heat absorbing means may be provided only in the outer peripheral portion (outer peripheral region) of the stage and the outer portion (center portion) of the center side (see Figs. 13, 21, and 23, etc.). Thereby, heat can be absorbed only from the outer peripheral side portion of the support surface, and the heat from the outer peripheral portion of the substrate disposed on the outer side can be surely absorbed, and the unnecessary heat can be prevented from being cooled to the central portion of the copper. | Wang Tyang W's points, but can seek to save heat sources. On the above-mentioned stage, it is preferable to insert an electrostatic type and vacuum type suction chuck mechanism that sucks the Meigu sub-test & material as a substrate - (for example, Fig. 18 to Fig. 23, etc.). As a result, the substrate can be brought into contact with the support surface in close contact with the home, and the absorbing ability can be surely exerted. Although it is also possible to use a mechanical chuck mechanism that is dropped into the 箄, however, since a part of the blade of the outer peripheral portion of the substrate is in physical contact with the mechanical chuck at this time, it is still preferable to form an electrostatic chucking machine 2 and Vacuum chuck mechanism. The suction hole and the suction groove of the vacuum chuck mechanism should be reduced by ^ ^ ^ ^ ^ ^. Hunting expands the contact area between the substrate and the carrier to ensure endothermic efficiency. Instead of the aforementioned chuck mechanism, it should be set only on the outer side of the front and j side stages, 103065.doc -12-1284350 Fig. 23, etc.). It is preferable to form a recessed portion in which the outer peripheral side portion is recessed in the above-described stage (refer to the center side portion (see FIG. 22 and the support surface on the center side to form a front view of FIG. 22 and FIG. 23, etc.). When the contact area of the substrate is reduced, the particles caused by the absorbing are reduced. When the heat sink is provided on the outer peripheral side of the stage, the outer peripheral portion of the substrate is in contact with the wafer, so that it can be surely absorbed. The heat transmitted from the outer periphery of the wafer to the inside can reliably prevent the center of the wafer

The part is heated. The entire area of the support surface (see the chuck mechanism can also be placed on the stage, Figure 18 to Figure 21, etc.). The components of the reactive gas are selected based on the undesired substances to be removed. In the case of an organic hydrazine in which the undesired substance is a carbonaceous compound or the like, it is preferable to use an aerobic gas, and it is preferable to use a gas containing a high-reactive oxygen enthalpy such as ozone or oxygen. It can also directly lick the pure gas and air of the oxygen that is not linearized and free radicalized. In addition, ozone (4) is decomposed into oxygen molecules and oxygenogens? (〇2+〇)' forms a thermal equilibrium state with (〇2+0). The life of ozone depends on the temperature. It is very long near 25C and halved when it is near. Further, in the case where the unnecessary material f to be removed is an inorganic film, it may be a perfluorocarbon (tetra) or a plasma. In addition, it can also be

Contains oxygen gas. ",,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,, 27荨). The reactive gas is ozone deuterium, and ozonation 103065.doc -13-1284350 can also be used (refer to Fig. 29 to Fig. 31, Fig. 34 to Fig. 37, Fig. 41 to Fig. 44 and Fig. 47~) Figure 52, etc.) When the reactive gas is fluoric acid vapor, a vaporizer and an ejector of hydrofluoric acid can also be used. The piezoelectric slurry processing device forms a glow between the electrodes at a substantially normal pressure (pressure close to atmospheric pressure). In the discharge, the processing gas is plasma (free radicalization and ozonation) to form a reactive gas. In addition, in the present, the term "substantially moving" refers to ~5〇663x1〇4 pa • ^ Scope, considering the ease of pressure adjustment and the simplicity of the device structure, it is 1.333X104~ι〇·664χ1〇4 Pa, more preferably 9 33ΐχΐ〇4~ι〇39八l〇4Pa〇'月·” Preferably, the reactive gas supply means has a function of forming a reactive gas from the reactive gas supply source. Forming a discharge path is processed to the position of the road by means of the blame (refer to FIG. 29, etc.). The reaction 1* raw material supply source may be disposed in the vicinity of the treated position, or may be disposed apart from the discharge path forming member to the vicinity of the treated position. The discharge path forming member may be adjusted by the discharge path temperature adjusting mechanism (see Fig. 34, Fig. 35, Fig. 37, etc.). Thereby, the temperature can be maintained at an appropriate temperature by the temperature of the discharge path, and the life of the long-oxygen radical can be maintained. This ensures that the removal efficiency can be improved by ensuring that the reverse L is not required. The spouting path temperature adjustment mechanism, the diameter and the fan are described. It is also possible to make a temperature-regulating path of the through-phase temperature medium, and form a double tube as a scooping path, so that the reactive gas flows into the 103065.doc -14-1284350 The path acts as a temperature adjustment path, and the media. The temperature control media can use water, : /, through temperature adjustment, and so on. The second rolling, the bismuth and the hydrocarbon (Flon) may also form the above-described discharge path # forming member, which is cooled by the heat absorbing means (see Fig. 36 and the like). ° The cooling mechanism described above simplifies the construction of the structure: it is not necessary to provide a discharge path, which is effective when it is necessary to cool the reactive gas. When the reaction enthalpy is in the form of ozone, the above-mentioned reactive gas supply mechanism is preferably 喰Ψ ΠΤ + + , and the reactive gas 4 Λ 4 Γ is formed into a small nozzle (the nozzle is discharged) (see Fig. 29, Fig. 29 41 to 45 and 47 to 52, etc.). Preferably, the discharge port is disposed toward the processed position and is disposed close to the processed position (see, Figs. 24 to 29 and Fig. 47 to Fig. 5, etc.). The discharge 0 is made to make the discharge paths from one reactive gas supply source divergent, and is connected to a plurality of discharge ports. The shape of the 乂 乂 ° ° 亦可 亦可 点 SP SP SP SP SP SP SP SP SP SP SP SP SP SP SP SP SP SP SP SP SP SP SP SP SP SP SP SP SP SP SP SP SP SP SP SP SP SP SP SP SP SP SP Along the front mouth. The ring is made to the whole circumference (see Fig. 30 and Fig. 31, etc.). It is also possible to form a clear port for the ::light source, a congratulatory exit for the linear light source, and an annular discharge port for the annular light source. mouth. And " a plurality of dot-shaped discharge ports and linear discharge ports are arranged in the circumferential direction of the carrier opening, and a swirling flow forming portion for swirling the reactive gas in the discharge σ direction is provided in the nozzle outlet forming member (refer to FIG. 4). 〇, etc.). Thereby, the reactive gas can be uniformly sprayed at the treated portion of the substrate at 103065.doc -15 - 1284350. The swirling flow forming portion has a swirling guide hole that extends in a substantially tangential direction of the discharge port and is connected to the inner peripheral surface of the discharge port, and is disposed apart from each other in the circumferential direction of the discharge port, and the swirling guide holes are formed. The path portion on the upstream side of the discharge = (see Fig. 40 and the like).

On the outer peripheral portion of the substrate, an organic film and an inorganic film are sometimes not required to be stacked (see Fig. 78). Generally, the type of gas which reacts with the organic film and the gas which reacts with the inorganic hydrazine differs depending on whether or not heating is required: the method is different. If the organic film such as a photoresist is as described above, it is necessary to cause ashing of the oxidation reaction by heating. In addition, the dioxide state is called) and the surplus (4) can be obtained by chemical reaction at room temperature. The anti-return gas is an anti-reactive gas such as an oxygen-based reactive gas which is reacted with the organic film, and the reactive gas supply means (the first reactive gas supply means) is used to remove the organic film. Further, a second reactive gas supply device that supplies a second reactive gas (e.g., a fluorine-based reactive gas) to the outer peripheral portion of the substrate at 'L σ can be further provided in Fig. 79 and Fig. 7). Therefore, it is possible to simplify the structure of the apparatus by separately providing the processing chamber for removing the inorganic film and to transfer it to the inorganic film processing place or the inorganic film to the organic film processing place without the need for the treatment. It can prevent the particles generated by the accompanying transfer, and can also create a nozzle with different gas types to increase the flux. In addition, by using various organic films such as photoresist and taking 1 to avoid cross-contamination problems. The number is represented by a volume of 5, etc., which is composed of cmHn (Mm, n, 1 is integral @. It has the reactivity with the organic film, 103065.doc • 16-1284350. The reactive gas should preferably contain oxygen. The gas is more preferably a surface-reactive oxygen-based gas containing oxygen radicals and ozone. It is also possible to directly use a pure oxygen gas and air. The oxygen-based reactive gas can use oxygen as a raw material gas. It is produced by using a plasma discharge device and an ozonator. The organic film increases the reactivity with the first reactive gas by applying heat. The 'oxygen-based reactive gas is not suitable for removing the inorganic film. The inorganic film is made of dioxide.矽(Si〇2), tantalum nitride (SiN), p_Si, 1〇w_k φ film, etc. The second reactive gas having reactivity with the inorganic film may be fluorine such as fluorine radical (F*). It is a reactive gas. The fluorine-based reactive gas can use carbon tetrafluoride (CFO, hexafluoride dicarbonate (such as pFC gas such as cjj and CHF3 special HFC-specific fluorine system) as the material gas, and the electric discharge device is used. The fluorine-based reactive gas does not easily react with the organic film. The etching of the inorganic film can be carried out usually at normal temperature, but there is also an inorganic substance which needs to be heated, such as niobium carbide. The substrate peripheral processing apparatus can also be applied to remove an inorganic film which is heated as an unnecessary substance φ. A reactive gas corresponding to tantalum carbide, such as carbon tetrafluoride. Further, a substrate peripheral processing apparatus having the structures (a) to (d) described above is stacked on a substrate and can be etched at a high temperature. a first inorganic film (such as tantalum carbide), and a second inorganic film (such as cerium oxide) having a lower etching rate than the first inorganic film at a high temperature is etched only in the first and second inorganic films The first inorganic film is also effective. The heater is preferably a light source having a ····································· The substrate can be heated in a non-contact manner. The heater is not limited to the radiant heater, and an electric heater or the like can also be used. When the heater uses a radiant heater, a laser can be used. And lights, etc. The light source may be a point light source, a linear light source along the circumferential direction of the stage, or an annular light source along the entire circumference of the stage. For a point light source, the base may be used. One of the outer peripheral parts of the material is partially heated locally. The laser light source is usually a point light source, which has good condensing property and is suitable for bundling irradiation. It can impart energy to the treated part at a high density and can be heated to a high temperature instantaneously. The control width is also easy to control. The type of laser can be LD (semiconductor) laser, YAG laser, excimer laser, or other forms. The wavelength of LD laser is 8〇. 8 nm~94〇nm, the wavelength of YAG laser is 1064 nm, and the wavelength of excimer laser is 157 nm~35i. The output density should be above 10 W/mm2. The oscillation form can also be cw (continuous wave) or pulse wave. It must be continuously processed for switching at a high frequency, etc. It is also possible to make the output wavelength of the light source of reference A correspond to the absorption wavelength of the aforementioned unwanted substance. In this way, energy can be effectively imparted to unnecessary substances, and heating efficiency can be improved. The light emission wavelength of the light source may correspond to the absorption wavelength of the unnecessary substance, and the wavelength extraction means such as a band pass filter may extract only the absorption wavelength. In addition, the absorption wavelength of the photoresist is 15 〇〇 nm to 2 〇〇〇 nm. The spot light of the point light source can also be converted into a linear light along the outer peripheral portion of the substrate by a convex lens, a cylindrical lens or the like. When the light source is linear, the range of the circumferential direction extending from the outer peripheral portion of the substrate 103065.doc -18-1284350 can be locally linearly heated. When the light source is annular, the outer circumference of the outer peripheral portion of the substrate can be heated in a partial annular shape. A plurality of point light sources and linear light sources may be arranged along the circumferential direction of the stage. The light source is an infrared lamp such as a near-infrared lamp such as a halogen lamp or a far-infrared lamp. The light source of the light source is continuous light. The wavelength of the infrared lamp is 760 nm to 10000 nm, and 76 〇 nm to 2 〇〇〇 nm becomes the near-red band. It is preferable to use a wavelength extraction means such as the above-described band pass filter to extract a wavelength suitable for the absorption wavelength of the unnecessary substance from the wavelength φ region to illuminate. The radiant heater (especially in the form of a light source) must be cooled by a radiant heater cooling mechanism such as a refrigerant or a fan (refer to Fig. 3, etc.). The radiant heating H may also include an optical transmission system such as a waveguide extending from the light source to the processed position (refer to the drawing. Thereby, the hot light from the light source can be surely transmitted to the periphery of the substrate. It is easy to use the optical fiber 2 to make the wiring easy. The optical fiber should form a bundle of several (majority) strips. The waveguide can also include several strips of pre-fibers extending from the above-mentioned light source, and the end portions thereof are along the front ^ ^The circumference of the mouth is separated from each other (see Fig. 39, etc.). Here, ^pm 9 is simultaneously irradiated with heat rays at several positions in the circumferential direction of the outer peripheral portion of the substrate. The optical connection between the terminal and the optical fiber includes the irradiation unit of the optical member for the above-mentioned assembly (see Fig. 4). The irradiation of the radiant heater, and the τ shoulder include a focusing optical system (concentration...., package 3. From the light source, the 埶', the ninth line, the parabolic cylindrical mirror, the convex straight line cable and the cylindrical lens, etc., which are bundled at the processing position, etc. The cluster optical system 103065.doc -19. 1284350 can also be Parabolic cylinder A combination of a plurality of mirrors and a plurality of projections may be inserted into the illuminating portion of the convex lens and the cylindrical lens, etc., and the focus adjustment mechanism may be inserted into the slanting mechanism. The focus may also be aligned with the φ and may have a right-drying deviation. Thereby, the density of the laser energy and the irradiation area (light collecting path and spot diameter) which are provided to the outer peripheral portion of the substrate can be adjusted to an appropriate size. The above-described focus adjusting mechanism can be used as follows.

When the σ portion of the groove or the orientation flat surface of the outer periphery of the substrate is treated, the focus of the radiant heater is shifted in the optical axis direction when the outer periphery of the substrate other than the notch portion is treated. Thereby, the irradiation width (light path) on the arsenal material can be larger than the groove and the plane of the orientation, and the heat ray is also irradiated to the groove and the orientation plane. The side edge, the heart edge, can further remove the film attached to the groove and the edge of the orientation plane (refer to FIG. 14 and the like). t adjustment 'Adjusts the irradiation width on the outer circumference of the substrate, and further adjusts the processing twist (the width of the film which is not required to be removed) (see Fig. 16 and the like). Even by making the radiant heater slightly slide in the radial direction of the substrate, the focus of the radiant heater is in the optical axis direction by the aforementioned focus adjustment mechanism

The processing width can still be adjusted (refer to Figure 17, etc.). At this time, the substrate is rotated by one person per person and is approximately the same size as the irradiation width of the radiant heater on the substrate. In other words, the radiant heater is slightly slid in the radial direction of the substrate. It is also preferable to start the irradiation from the inner side of the outer peripheral processing range of the substrate, and to sequentially slide slightly in the outer direction of the radius. Further, a reflection member that irradiates the heat rays from the light source toward the processed position at the opposite position 103065.doc -20-1284350 may be disposed on the inner side of the processed position and in the vicinity of the processed position (refer to FIG. 28 and the like). . Thereby, the light source can also be disposed in the vicinity of the extension surface of the support surface and on the front side thereof. The substrate peripheral processing apparatus may further include: (a) a stage that supports a support surface of the substrate so as to protrude from the outer peripheral portion; (b) a radiant heater having a light source from the load Arranging away from the processed position where the outer peripheral portion of the back surface of the substrate supported by the table is separated; and

An optical system that faces the processed position without scattering light from the source; and

(a reactive gas supply means having a reactive gas supply source connected to a reactive gas for supplying an unnecessary substance, and a discharge port for discharging a reactive gas, the discharge port being on the support surface or the like The extension surface is disposed on the surface side or substantially on the extension surface, and is disposed close to the processed position (see FIGS. 1, 24 to 30, 34 to 39, 41 to 44, etc.). The substrate is supported by the stage so as to protrude from the periphery of the substrate, and is irradiated to the discharge port of the supply mechanism by the periphery of the back surface of the substrate, which is heated by the heat ray portion from the radiant heater, by itself. The reactive gas is used to remove the coating material. The portion or the vicinity of the focal point is connected as follows: 'local heating is applied, and a reactive gas is provided in the portion of the portion of the chamber. The ejection port is ejected to remove unnecessary substances and cover the outer peripheral portion of the back surface of the substrate. It is not necessary to locally irradiate the heat to the outer peripheral portion of the back surface of the substrate to perform local heating, and the reactive gas can be sprayed from the vicinity of the local heating portion. The hunting surface can effectively remove the unnecessary material f of the part. 103065.doc -21· 1284350 The support surface of the aforementioned stage is preferably slightly smaller than the aforementioned substrate, and the processed position of the outer peripheral portion of the substrate is located at a position higher than the aforementioned support The surface may be extended on the outer surface in the radial direction. The irradiation portion may be disposed on the inner side of the extension surface, and the discharge port may be disposed on the inner side of the extension surface or substantially on the extension surface (see FIG. 1 and the like). The partial heat is applied to the outer peripheral portion of the back surface of the substrate, and the reactive gas can be sprayed from the vicinity of the locally heated portion. Thereby, the unnecessary substance of the portion can be effectively removed. The discharge port is preferably closer to the irradiation portion. By arranging the processing position, it is possible to reliably supply the reactive gas to the treated position in a state of non-diffusion, high concentration, and high activity, and it is possible to surely improve the efficiency of removing unnecessary substances. The outlet is disposed away from the treated position, whereby the irradiation portion and the discharge port forming member are easily formed.

The irradiation portion and the discharge port of the radiant heating H are preferably arranged in a direction different from each other in the above-described processed positions (see Fig. 。). Thereby, the layout of the radiant heater and the outlet forming member is easier. Any one of the irradiation portion and the discharge port of the radiant heater should be disposed substantially on a line orthogonal to the extended surface by the "processed position" (see Fig. 1 and the like). By heating the radiant x ^ ^ ", the radiant portion is disposed substantially on the parent sputum, the heating efficiency can be improved, and the Shida will be arranged on the positive parent line substantially, thereby improving the reaction efficiency. The mouth outlet of the discharge port of the gas supply mechanism is formed 103065.doc 22· I28435〇

(The nozzle is out of the nozzle) must be made of a light-transmitting material. Thereby, even if the optical path of the light-emitting heater 2 interferes with the ejection enthalpy forming member, the light can be surely irradiated to the processed portion of the substrate through the ejection port, and the portion can be surely added. Further, it is not limited by the optical path of the light-emitting heater, and the nozzle outlet forming member can be surely disposed in the vicinity of the portion to be treated, and the reaction gas can be surely ejected from the vicinity to the portion. As the light-transmitting material, for example, a transparent resin such as quartz, acrylic acid, transparent Teflon (registered trademark) or transparent polyvinyl chloride can be used. In addition, when a heat-resistant resin is used for a transparent resin, the output of the light-emitting heater or the like must be adjusted to a certain extent. / Solution A fence surrounding the processed position may be provided, and a discharge port of the reactive gas may be disposed in the fence. Further, 'the fourth (four) heater irradiation portion' may be provided on the outer side of the fence, and at least a portion of the fence facing the irradiation portion may be formed of a light-transmitting material (see FIGS. 38 and 61 to 77, etc.) It can prevent the completed reactive gas from leaking to the outside, and the heat radiation can be transmitted through the fence, and the substrate can be surely heated and heated. The portion and the discharge port must be relatively movable. The aforementioned stage is a circular stage, and the circular stage must be rotated around the central axis, and the source and the discharge port are relatively rotated. : The removal process of the unnecessary substance is performed in the circumferential direction of the outer peripheral portion of the back surface of the substrate. Even if the light source is annular, by performing the relative rotation described above, it is possible to improve the number of relative rotations (relative movement speed). It is necessary to appropriately set the temperature at which the outer peripheral portion of the base surface of the substrate is heated. It is necessary to surround the above-mentioned stage in the circumferential direction to surround the processed position 103065.doc -23-1284350 and to be in the same stage as the above Between the figures.... by this, in the Treatment 2:::The framework (refer to Figure 1 and the short material of the body, can be (4) (4) Bu Department material to complete the reaction gas „,, +· L広b Bu Buzheng, and can fully ensure the reaction time and money The outlet shall be in a manner to accommodate the material-like space, and the position shall be fixed to the aforementioned frame. It shall be provided with a rotating drive mechanism for the money U to the aforementioned (four), in the center of the towel.

The table rotates. The frame is rotated by the frame, and the fixed carrier is also provided with a side portion of the back surface that allows relative rotation and is sealed against the support surface side of the stage, as shown in Fig. 1 and the like. Therefore, it does not constitute; 1 labyrinth seal (can not rotate the stage or frame, and can prevent the reaction of the finished treatment from leaking to the outside. ' 胄... between the side and the frame &quot丨 , , 须 须 须 须 须 须 须 须 须 须 须 须 须 须 须 须 须 须 须 须 须 须 须 须 须 须 须 须 须 须 须 须 须 须 须 须 须 须 须 须 须 须 ( ( ( ( ( ( ( According to this, it is possible to prevent the false gas--, 广, 广 丨 丨 丨 反应 反应 反应 反应 反应 反应 反应 反应 反应 反应 反应 反应 反应 反应 反应 反应 反应 反应 反应 反应 反应 反应 反应 反应 反应 反应 反应 反应 反应 反应 反应 反应 反应 反应 反应The position is shown in Fig. 29, etc.). By this, when the substrate is placed on the stage or taken out, the cover member is retracted, and the cover member can be prevented from being affected by the setting and the removal operation. An annular space mechanism of the annular space (see Fig. 24 to Fig. 27, etc.), whereby the processed reactive gas can be discharged from the annular space. 103065.doc .24-1284350 must be provided to attract the vicinity of the discharge port Attraction mechanism (refer to Figure 3, etc.) The peripheral portion of the processing portion is quickly sucked to discharge the processed reactive gas. The outer peripheral portion of the support surface of the stage must be formed with a step of forming a gas stagnation joint with the outer peripheral portion of the substrate (see FIG. 37 and the like). In this way, the reactive gas ejected from the discharge port is temporarily retained in the gas retention portion, and the time of contact with the outer peripheral portion of the substrate can be prolonged, and the reaction time can be sufficiently ensured, and the reaction efficiency can be improved. The inert gas ejecting member that injects an inert gas (see Figs. 34 to 37, etc.) is disposed opposite to the portion, thereby preventing the reaction gas from flowing to the front side of the substrate, and surely preventing the surface side from being damaged. The inert gas injection member may be a nozzle or a fan filter unit. Of course, the inert gas injection member is disposed from the support surface at least a portion of the thickness of the soil material. Further, the substrate is disposed and removed. When it is backed up, it will be avoided. The inert gas can be pure nitrogen and clean dry air (CDA), etc. As mentioned above, oxygen-based reactive gas such as ozone When the organic film such as fluorocarbon is engraved, the higher the etching rate is, the higher the etching rate can be. The heating mechanism is heated by infrared rays and laser radiation, which is suitable for the contact person of the accompanying entity such as a heater, and can prevent generation. In addition, when the light beam such as a laser is irradiated to the outer periphery of the wafer from the top or the bottom of the wafer, the light is obliquely or even parallelly incident at the vertical portion of the bevel portion and the end edge of the outer peripheral portion of the wafer, and the heating efficiency is obtained. Insufficient, the rate of money is slow. Therefore, it is also possible to support the substrate by the stage, 103065.doc -25 · 1284350, to the outer circumference of the substrate, and to pour the direction outside the radius of the substrate, and to shoot The light is supplied to the reactive gas, and the unnecessary material covering the outer peripheral portion of the substrate is removed by contact with the reactive gas (see FIGS. 30, 53, 56, and 57, etc.). Thereby, the oblique direction of the outer peripheral portion of the substrate and the outer end of the vertical direction of the substrate and the direction of the light can be vertically approached, and the radiant energy density can be sufficiently increased to sufficiently increase the heating efficiency, thereby further increasing the film of the outer periphery of the substrate. Processing speed (etching rate). In addition to the direction in which the substrate is tilted (see Fig. 3 〇, Fig. 5 3 Fig. 7, etc.), it also includes the positive side direction (parallel to the substrate) (see figure %, etc.). The substrate may be supported by the stage, and the outer peripheral portion of the substrate may be irradiated with a heat ray, and the reactive gas may be supplied to cause the irradiation direction of the heat ray to be the center of the substrate. The material (the main surface) moves in the plane perpendicular to the surface, and the unnecessary substance covering the outer peripheral portion of the substrate is removed by contact with the reactive gas (see FIGS. 59 and 60, etc.). Thereby, the surface of the outer peripheral portion of the substrate, the outer end surface, and the back surface side can be irradiated with heat rays substantially perpendicularly, and can be effectively treated for any portion. The surface on which the heat rays move is preferably a surface that passes through a radius of the substrate. The substrate peripheral processing apparatus may further comprise: U) a carrier having a support surface for supporting the substrate; a substrate outer periphery of 103065.doc -26-1284350; and (b) a reactive gas supply mechanism at the carrier The treated position at the upper portion of the stage is supplied with the above-mentioned reactivity and gas; from the above-mentioned support map, Fig. 53 and Fig. 56 (c) the illuminating unit' is irradiated with heat rays in the direction outside the radius of the surface to be processed. (Refer to Figure 57 and so on). Thereby, the irradiation direction of the heat rays perpendicular to the vertical portions such as the inclined surface portion and the outer end surface of the outer peripheral portion of the substrate can be made to be close to zero, and the incident angle can be made close to zero, and the radiant energy density can be sufficiently increased to sufficiently increase the heating efficiency, thereby further increasing The processing speed (etching rate) of the film of the outer periphery of the US material was removed. The soil substrate peripheral processing apparatus may further include: (a) a stage that has a support surface supporting the substrate; (b) a reactive gas supply mechanism that is attached to the outer peripheral portion of the substrate on the stage a treatment position to supply the reactive gas; ° (c) an irradiation unit that irradiates the heat-irradiated light to the processed position and (d) a moving mechanism that faces the irradiated portion toward the processed position and The support surface (and the base material on the support surface) moves in the plane orthogonal to each other (see FIGS. 59 and 60, etc.). Thereby, the heat rays can be irradiated substantially perpendicularly to the surface side and the outer end surface of the outer peripheral portion of the substrate, and the back surface side, and the like, and any portion can be effectively treated. The surface orthogonal to the aforementioned support surface is preferably the surface passing through the center of the support surface. The supply nozzle and the exhaust nozzle of the reactive gas supply means may move or even adjust the angle together with the irradiation unit, and the position may be fixed despite the movement of the irradiation unit. 103065.doc -27- 1284350 The irradiation direction is preferably substantially along the normal line of the irradiated point (the center of the irradiated portion) of the outer peripheral portion of the substrate (see Fig. 54 and the like). By the fact that the incident angle at this point can be substantially zero, the light energy density can be surely increased, and the heating efficiency can be surely improved. When the discharge nozzle of the reactive gas supply means of the substrate peripheral processing apparatus is tubularly tapered from the base end to the end, the reactive gas is sprayed on the substrate and immediately diffused. Thus, the reaction of the active species is given

The time is shortened, and the utilization efficiency of the active species and the reaction efficiency are poor. And the amount of reactive gas required is also increased. The reactive gas supply mechanism of the outer peripheral processing device of the present invention includes: an introduction portion that guides a reactive gas for removing an unnecessary substance to a vicinity of a processed position where the outer peripheral portion of the substrate is located; and a tubular portion that is connected In the introduction portion, the inside of the processed portion may be formed to be a temporary storage space in which the inside of the tubular portion is enlarged from the guide portion, and the reactive gas is temporarily retained (see FIG. And Figure 70 ~ Figure 77, etc.). Thereby, the utilization efficiency and reaction efficiency of the reactive gas can be improved, and the amount of gas required can be reduced. The cylinder portion itself or a discharge port between the cylinder portion and the outer edge of the substrate at the position to be processed forms a continuous storage space, and the discharge port causes the gas to flow out from the temporary retention space. Thereby, it is possible to prevent the gas having a reduced degree of reaction and the % of the reaction by-product from remaining in the temporary retention space, and the temporary retention space can be supplied to the new reactive gas at any time, and can be further supplied. It does improve the efficiency of the reaction. The end of the tubular portion is opened to face the processed position (see Figs. 66 and 71, etc.). At this time, it is preferable that the end edge of the tubular portion is formed to have a notch corresponding to the outer side of the radius of the base material, and the discharge port is formed (see Figs. 70 and 71, etc.). In this way, the process gas and the reaction by-product can pass through the notch, and the gas can be quickly discharged from the temporary storage space of φ, and a new reactive gas can be supplied at any time in the temporary storage space, and the reaction efficiency can be further improved. The cylindrical portion may be disposed so as to penetrate the processed position, and a slit that is inserted into the outer peripheral portion of the substrate may be formed on the peripheral side portion of the tubular portion corresponding to the processed position, and the introduction portion is connected to the slit base. The tubular portion on the end side (see FIG. 74 to FIG. 77 and the like). At this time, the inner peripheral surface of the portion of the cylindrical portion corresponding to the base end side of the slit is configured as described above, and the inner peripheral surface of the portion of the portion corresponding to the portion to be processed which is not formed by the slit is formed, and is processed as described above. The outer edges of the wafers at the location together form the aforementioned vent. The exhaust path is preferably directly connected to the tubular portion on the tip end side of the slit (see Figs. 74 and 75 and the like). Thereby, the process completion gas and the reaction by-product can be surely introduced into the exhaust path, and even if fine particles are generated, the exhaust can be surely forced, and the reaction control can be easily performed. Preferably, the base end portion of the tubular portion is provided with a light-transmissive cover portion that is closed, and the heat ray irradiation portion is preferably disposed outside the cover portion 103065.doc -29-1284350 toward the processed position (refer to the figure). 7 0 and Figure 7 7 etc.). Thereby, when the undesired film reacts with the reactive gas by endothermic reaction, the reaction can proceed. As described above, since the endothermic mechanism is effective on the inner side of the outer peripheral portion of the substrate of the wafer or the like as described above, it is preferable to make the diameter of the stage slightly smaller than the diameter of the substrate of the wafer or the like, and only the outer peripheral portion of the substrate protrudes from the radius of the stage. Outside. Further, the substrate is placed on the stage, and when it is taken out from the stage, it is preferable to avoid contact with the front side of the substrate. For this purpose, use a fork-shaped robot arm and pick it up against the underside (back) of the substrate. However, when only a small portion of the outer peripheral portion of the substrate protrudes from the stage, there is no room for abutting under the substrate. Therefore, it is preferable to movably set the center of the small diameter in the center of the stage. The spacer U is shown in Fig. 86 to Fig. 87, etc.). In the state in which the center gasket is protruded upward from the loading table, the substrate is placed on the center gasket by the machine arm of the shape, so that the fork is retracted and the center piece is lowered to the same level as the stage. The substrate can be placed on the stage when it is flat or recessed. After the processing is finished, ^ 塾 上升 ’ ” ” ” ” ” ” ” ” ” ” ” ” ” ” ” ” ” ” ” ” ” ” ” ” ” ” ” ” ” ” ” In the stage with the above-mentioned center gasket, the center plate's & lower private mechanism is disposed on the central axis. In addition, it is preferable to add a suction current of the base material to the center gasket, and a suction flow path from the center gasket is also disposed on the center shaft. ^When it is not necessary to cool down, it is also convenient to replace the center shims directly with the center shims. At this time, the central cymbal rotation mechanism can also be connected to the central shaft. 103065.doc -30 - 1284350 In this manner, the suction flow path for absorbing the substrate to the stage and the cooling flow path to the cooling chamber are not easily disposed on the central axis, and are disposed. In addition, since the stage rotates around the central axis, there is a problem of how to connect the stage to the eccentric flow path. Therefore, the substrate peripheral processing apparatus includes a stage on which a substrate such as a wafer to be processed is required to have a function of temperature adjustment (including cooling, suction, and the like), and can be disposed around the central axis. Rotate,

The stage includes: a stage main body provided with an installation surface of the substrate, and a terminal end of the flow path (a portion requiring the above-mentioned functions such as temperature adjustment and suction); the fixed cylinder is provided with the aforementioned An opening of the flow path; the rotating cylinder is rotatably inserted into the fixed cylinder and coaxially coupled to the stage body; and a rotary driving mechanism that rotates the rotating cylinder; the inner circumference of the fixed cylinder And an annular path connected to the opening of the A to be formed on the outer circumferential surface of the rotating cylinder, and an axial direction path extending in the axial direction is formed in the rotating cylinder, and the end of the path in the axial direction is connected to the annular path The other end is connected to the aforementioned terminal (refer to FIG. 87 and the like). This can be used to achieve temperature adjustment, sorption, etc., on the substrate such as a wafer, in the self-supporting stage. The position of leaving is circulated, and the rotation is carried on the central axis to ensure space such as the fitting. The advancement and retraction mechanism or the like is such that the terminal is provided in a substrate cooling chamber inside the stage body or 103065.d〇i 311-184350 and passes through a cooling fluid for cooling the substrate in the flow path. 2匕月'j describes the need to cool the substrate. ^When the stage is provided with a stage body, which is formed with a cold or refrigerant path inside, as the heat absorbing mechanism; Provided with an opening for a refrigerant; a "tray" that is rotatably inserted into the cartridge and coaxially coupled to the carrier body;

a rotation driving mechanism that rotates the rotating cylinder; forming an annular path connected to the opening on the inner circumferential surface of the fixed 1 ^ 或 or the outer circumferential surface of the rotating cylinder, and extending in the axial direction in the condensation cylinder In the axial direction path, one end of the shaft is connected to the annular path, and the other end is connected to the aforementioned or to the refrigerant path (see FIG. 87 and the like). The uranium flow path structure for cooling said that the outer circumferential surface of the rotating cylinder sandwiches the sealing groove, and the inner circumferential surface of the fixed cylinder or the front side of the annular path is formed into a ring shape. The cross-sectional path of the annular path is opened/filled, and the sheet is formed (see FIG. 88 and the like). Thereby, the cooling fluid enters the annular seal 2 via the gap between the outer circumferential surfaces of the epicyclic cylinder: (4) (positive μ) acts on the opening of the filling sheet opening of the cross-sectional gate shape f ^ 吏 = dense sheet It abuts against the inner circumferential surface of the annular seal groove. Therefore, it is possible to seal the poem and ensure the leakage of the cooling fluid. Further, the terminal may be formed in the suction groove of the installation surface, and the opening 103065.doc -32-1284350 may be vacuum-sucked (see Fig. 87 and the like). Thereby, the function of the need is described, and the adsorption of the substrate can be performed. In the flow path structure for suction, an annular sealing groove is formed on both sides of the annular path on the inner circumferential surface of the fixed cylinder or the outer circumferential surface of the rotating cylinder, and each of the mountain sealing grooves is accommodated. There is a packing sheet having a π-shaped cross section that opens toward the side opposite to the annular path (see FIG. 88 and the like). When the negative pressure of the suction flow path reaches the annular seal groove through the gap between the inner circumferential surface of the fixed cylinder and the outer circumferential surface of the rotary cylinder, the negative pressure acts on the cross-section n-shaped packing. The back of the sheet is used to enlarge the packing sheet, and thus the packing sheet abuts against the inner circumference of the annular sealing groove, thereby reliably preventing leakage. In the inner side of the rotating drum, a gasket rotating shaft connected to the center gasket should be accommodated. The aforementioned center m advances and retreats in the axial direction via the (four) sheet rotating shaft. The aforementioned center cymbal can also be rotated via the spacer shaft. In the cymbal shaft, a sputum advancing and retracting mechanism for advancing and retracting the central cymbal, and a part of the squeezing mechanism for rotating the central cymbal or a y X yoke on the central shims are also formed with a absorbing substrate. Sucking the ditch, and also in the month, the suction shaft of the shim shaft is provided with a suction path connected to the sump of the Lisi center gasket. It is also possible to discharge the discharge nozzle of the reactive gas for removing the unnecessary substance from the discharge direction of the outer peripheral portion of the substrate of the crucible 04, and to the substrate circumferential direction of the wafer or the like (the tangent of the processed position). Direction) (Refer to Fig. 图 to Fig. 亦可 can also constitute the ejection of the nozzle from the outer peripheral processing device of the substrate. The direction in which the gas supply mechanism is ejected, near the annular surface where the outer peripheral portion of the substrate is located, 103065.doc -33 · 1284350 is arranged substantially in the circumferential direction of the lobe surface (the tangential direction of the treated position) (see Fig. 41, etc.). Thereby, the reactive gas can flow along the outer periphery of the substrate, and the reactive gas can be extended. When the substrate is contacted with the outer periphery, the reaction efficiency can be improved. When the unnecessary material on the back surface of the wafer is mainly removed, the discharge nozzle must be disposed on the back side of the annular surface (and further on the back side of the wafer) (refer to the figure). /) In addition, the end portion (discharge shaft) of the discharge nozzle should be inclined toward the inner side in the radial direction of the annular surface (see Fig.). Thereby, it is possible to prevent the anti-f f body from spreading to the surface side of the substrate, and to prevent damage to the surface side. The end portion (discharge shaft) of the discharge nozzle should be inclined from the front side or the back side of the annular surface toward the annular surface (see (4), drawing, etc.). Thereby, the reactive gas can be surely ejected to the substrate. The tip end portion (discharge shaft) of the discharge nozzle may be straight toward the circumferential direction of the substrate (tangential direction). In addition to the above-mentioned spray (four) nozzle, the substrate peripheral processing apparatus should further be: suction bow: a suction nozzle for the gas to be processed (exhaust nozzle X, see FIG. 1 and a suction pump connected to a vacuum pump, etc.). The description and arrangement of the mouth are preferably arranged so as to face the discharge nozzle with respect to the position at which the burner is placed (see FIG. 41 and the like). Direction: ...: the circumferential direction of the annular surface (the tangent 4 is opposite to the nozzle) The configuration of the way (refer to the figure. Hunting this can be surely along the direction of flow of the substrate, it can be confirmed that the apricots control the reactive gas and the reactive gas reaches the part that does not need to be treated. Then, it can be sprayed After the squirt is sprayed in the tangential direction and reacted, 103065.doc -34-1284350, the processed gas (reaction by-product including microparticles, etc.) flows out substantially straight along the tangential direction of the substrate, and When the suction nozzle is sucked and exhausted, it is possible to prevent the particles from being deposited on the substrate. When the discharge nozzle is disposed on the back side of the annular surface, the suction nozzle is also disposed on the back side. The end portion (suction shaft) of the suction nozzle must be inclined toward the annular surface (see Fig. 42 and the like). Thereby, the reactive gas flowing along the substrate can be surely sucked. The end portion of the suction nozzle can also be attracted ( The suction shaft) is straight toward the direction of == direction (tangential direction) by ejecting the squirting • • • 端 端 端 端 • 直线 。 直线 直线 直线 直线 直线 直线 直线 = = = = = = = = = = = = = = = = = The suction shaft of the end portion of the suction nozzle is disposed on the inner side of the surface of the discharge nozzle so as to be substantially perpendicular to the discharge axis of the end portion of the discharge nozzle (see FIG. 49 and the like). Thereby, the reaction is ejected from the discharge nozzle. After that, the processed gas φ (reaction by-product such as fine particles) can be quickly flowed from the substrate to the outside of the radius to be sucked and vented to prevent the deposition of fine particles on the substrate. The annular surface of the outer circumference of the material is disposed on the opposite side of the arrangement side of the end portion of the discharge nozzle, and the suction shaft of the suction nozzle end portion is disposed toward the annular surface (see FIG. 5A and the like). Can be self The gas ejected from the nozzle is discharged from the surface on the outer side of the substrate to the surface on which the nozzle is disposed, and the surface on the side where the suction nozzle is disposed is surely removed from the surface on the outer side of the substrate (see FIG. 51 and the like). Then, the processed gas (reaction by-products including fine particles, etc.) can be sucked into the nozzle 103065.doc -35-I284350 to exhaust the particles, thereby preventing the accumulation of fine particles on the substrate. The cavities of the suction nozzles are preferably the aforementioned. The ejection nozzle has a large diameter. The suction nozzle preferably has a diameter of 2 to 5 times larger than the ejection nozzle. The diameter of the ejection nozzle is preferably about 丨3 mm. Further, the diameter of the suction nozzle is preferably 2 to 15 mm, it is possible to suppress the diffusion of the gas and the reaction product produced by the treatment, and it is possible to evacuate the suction port and to exhaust the gas. The rotation mechanism for rotating the substrate toward the discharge nozzle in the circumferential direction is required. In the positive direction of the rotation direction of the substrate, the discharge squib is disposed on the upstream side and the suction port is disposed on the downstream side (see FIG. 41 and the like). The radiant heater shall be capable of locally illuminating the light-radiating heat between the discharge nozzle and the suction squirt in the aforementioned annular surface.

This allows the outer peripheral portion of the substrate between the discharge nozzle and the suction nozzle to be "heated" and brought into contact with the reactive gas. This helps to remove the film which has a higher temperature and higher rate (such as an organic film such as a photoresist). Due to the local heating, the mouth prevents or even inhibits heating to a portion where treatment is not required. Further, since it can be heated in a non-contact manner, it is possible to surely prevent the generation of fine particles. The radiant heater must use a laser heater. When the organic hydrazine such as ruthenium is removed, the reactive gas is preferably formed to be an ozonator. Oxygen plasma may also be used. To make a ride, a cooling mechanism must be provided on the spray nozzle. In this way, the odor can be maintained at a low temperature to prolong the life, and the anti-cooling mechanism can be ensured, for example, in the case of keeping the spray + squirting, the cooling is formed on the nozzle holding member. W3065.doc -36 - 1284350 & in the θ cold >& the road only through the cooling water cooling medium. The temperature of the cooling medium can be room temperature. The nozzle holding member must be formed of a good thermal conductive material (such as aluminum). The local radiant position of the heater is on the nozzle side of the discharge nozzle and the 四(4) nozzle (refer to Fig. 45 (8), etc.). This can handle the reaction points from the outer peripheral portion of the substrate to the reaction from the discharge nozzle! When the radiant heat is applied immediately, the reactive gas continues to be sprayed off for a long time, and the remaining heat is maintained at a high temperature, and the processing efficiency can be further improved. (3) The rotation direction of the substrate can also be opposite to the above. At this time, the radiant can be heated. = the position of the light-emitting position is biased toward the suction nozzle side between the discharge nozzle and the suction nozzle. The distance between the discharge nozzle and the suction nozzle should be considered in consideration of the rotation speed of the rotating mechanism and the radiant heater. The heat capacity and the like can be appropriately set. The reactive gas for removing the unnecessary substance can be guided to the periphery of the substrate, and the guide path extending from the outer peripheral portion of the m material can be guided to the circumference: the flow is 'removed to cover the crystal The gas supply unit of the reaction reducing body supply mechanism of the substrate outer peripheral processing apparatus may be provided with a gas guiding member, and the chaotic body guiding member may include a peripheral portion of the substrate. The guide path extending in the circumferential direction passes through the reactive gas in the extending direction of the guide path (see FIGS. 81 to 83, 91 to 94, etc.) 103065.doc -37 - 1284350 The reaction time can be increased by contacting the active species to the outer periphery of the substrate, and the reaction efficiency can be increased. The gas guiding member can be suitably used as the gas supply nozzle of the second reactive gas supply mechanism. It is suitable for the removal treatment of inorganic films such as tantalum nitride and cerium oxide.

The gas guiding member is required to have an insertion port that is insertably inserted into the outer peripheral portion of the substrate, and the aforementioned guiding path is formed by enlarging the bottom end of the insertion opening. f The thickness of the insertion opening must be slightly larger than the thickness of the substrate, and the gap between the substrate and the substrate should be as small as possible in the inserted state. The introduction port of the reactive gas is connected to one end of the extending direction of the guiding path, and the other end is connected to the discharge port (see Fig. 82 and the like). Thereby, the reaction gas can be provided from the end portion of the guide path to the other end portion, and the rotation mechanism for rotating the gas (four) guide member in the circumferential direction of the substrate can be provided at an adjustable rotational speed. Further, the unnecessary substance can be removed uniformly over the entire circumference of the outer peripheral portion of the substrate, and the treatment width for removing the unnecessary substance can be adjusted by adjusting the rotation speed. The % rotation speed is preferably in the range of 丨 rpm to 1000 rpm, more preferably in the range of (7). A rotational speed of more than 1000 rpm will cause the reverse gas to be in contact with the treated portion for too short a time, and thus is not suitable. The direction of the gas flow in the path of the substrate and the direction of rotation of the substrate are preferably zero or in the illuminating portion of the inner body of the guiding path.辐射 置 辐射 辐射 辐射 辐射 气体 气体 气体 气体 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 103 103 103 103 103 103 103 In the guiding member, the light transmitting member that transmits the heat rays of the guiding path portion can be faced (refer to the figure, the inorganic film (such as carbon stone) and the organic film such as photoresist and polymer which need to be heated during etching" The removal treatment can also be carried out using the above gas guiding member.

a gas guiding member attached to the illuminating portion is stacked on a substrate: a first-inorganic film (such as a carbonized stone) which can be silver-etched at a high temperature, and a lower engraving rate at a high temperature than the first-inorganic film The second inorganic film (for example, it is also desired to be silver-etched only in the first-and second-inorganic film of the second inorganic film). The heater may be added to the inside of the guiding path (especially the upstream side of the guiding path). The outer peripheral portion of the substrate (in the guide π side) or the outer peripheral portion of the substrate on the upstream side in the rotational direction of the guide path (see FIG. 95 and the like). The gas flow direction of the guide path is preferably the same as the rotation direction of the substrate. It is preferable that the illuminating unit bundles the irradiation hot line (see ® 95 or the like) near the upstream end of the guiding path, and H can rotate the outer periphery of the substrate near the upstream end of the branch path to be sufficiently reactive with fresh reactive gas. When the reaction is caused to be 'and' and then rotated to the downstream side of the guide path and temporarily maintained at a high temperature, the reaction can be sufficiently caused in the intermediate portion and the downstream side except for the portion on the upstream side of the guide path. Therefore, the processing efficiency can be surely improved. In addition, the residue generated by the surname is generated, that is, the film of the solid by-product is generated at normal temperature, and the heater can be locally heated to be in the direction of condensation. (4) The outer surface of the substrate can be removed from the outer periphery of the substrate by gasification. For example, when nitrogen is cut, solid by-products such as (NH4)2SiF6, 103065.doc-39-1284350 NH4F·HF are generated. In addition to the gas guiding member of the second reactive gas supply means, the processing head for removing an organic film as the first reactive gas supply means may be provided. The processing head for removing an organic film may further include: an irradiation unit that locally supplies radiant heat to the outer peripheral portion of the substrate; and a gas supply unit that supplies the first one of the oxygen-based reactive gas that reacts with the organic film. The reactive gas is at the local position (see Fig. 79, etc.). The organic film removal processing head and the gas guiding member may be disposed apart from each other in the circumferential direction of the stage. The illuminating unit of the erroneous head heats and removes the solid by-product generated by the treatment of the gas guiding member. As described above, generally, an orientation plane, a groove, and the like are formed in one portion of the outer peripheral portion of the circular wafer. Therefore, the wafer may be placed on the stage, the stage may be rotated around the rotating shaft, and the supply nozzle of the processing fluid (reactive gas) may be aligned with the rotating shaft. The first axis of the intersection, the location where the outer periphery of the wafer passes, and the uranium crossing point is continuously or temporarily changed with the rotation, and the supply nozzle is slid along the first axis. Supplying the processing fluid (see FIG. 99, etc.). Preferably, the wafer is centered on the stage, the stage is rotated around the rotating shaft, and the first axis orthogonal to the rotating axis is the crystal When the outer circumference of the circular circle passes, the supply nozzle of the processing fluid (reactive gas) is moved toward the position where the traversing point, that is, the position on the first axis from which the radius of the rotation is substantially equidistant from the radius of the wafer. And, in the first axis, when the notch of the 103065.doc -40-1284350 of the wafer passes through, the supply nozzle is slid along the first axis, and the supply nozzle is always supplied toward the crossing point. Processing fluid. The substrate peripheral processing apparatus may further include: a stage on which the wafer is placed and rotated around the rotating shaft; and a supply nozzle for the processing fluid (reactive gas) which is along with the parent of the rotating shaft One axis is slidably disposed; and

The nozzle position adjusting mechanism adjusts the position of the supply nozzle along the first axis in accordance with the fluctuation in the first axis and the position where the outer peripheral portion of the wafer passes through the rotation continuously or temporarily. And always facing the aforementioned crossing point (refer to FIG. 99, etc.). The substrate peripheral processing apparatus may further include: a stage that rotates around the rotating shaft (central axis); and an alignment mechanism that forms a notch such as an orientation flat surface and a groove in a portion of the circumference of the round material Wafer alignment (centering) is used to process the stage

(1) a supply nozzle for a treatment fluid (reactive gas) slidably disposed along a first axis orthogonal to the rotation axis of the disk; & (4) mechanism: the first axis, the crystal The rounded shaft of the circle: the more the day, the feed nozzle is oriented toward the traversing point, that is, the first axis at a position on the first axis that is substantially equidistant from the radius of the Γ, when the notch of the crystal 81 passes through In response to the change in the teeth, the feed nozzle is moved along the first axis and always faces the passing point (see FIGS. 97 to 99 and the like). The parent axis "Moon Movement 103065.doc -41 - 1284350" may also be a reaction in which the reactive gas supply mechanism has a first axis orthogonal to the central axis; and the wafer is centered on the wafer just described The feeding nozzle of the second carrier/body is rotated around the mandrel, and the front end of the wafer is in the middle of the front side of the first axis, and the end portion of the circular nozzle is directed toward the center axis. The above-mentioned equidistance distance Knife-Zhe-, the radius of the Japanese yen is substantially "still" from the position on the first axis of the departure, and the first axis is on the first axis, and the wafer is missing. With the above-mentioned supply and the end portion always facing the side of the crossing point 4 _ ',, " and the above-mentioned △ 旌 旌 Π Π A A 则 则 供给 供给 供给 供给 供给 供给 供给 供给 供给 供给 供给 供给 供给 供给 供给 供给 供给 供给 供给 供给 供给 供给 供给 供给 供给Fig. 99, etc.) Sliding along the first axis (refer to the figure, the alignment mechanism must have a detection crystal part, and the notch detection center of the position of 廿溆 + + 并行 will parallel the σ section toward the designated direction of the stage. The position adjustment mechanism must perform the month's confession in synchronization with the rotation of the aforementioned stage. Adjusting the position of the mouthpiece. θ The load D is placed in the spin-rotation angle yoke during the one-axis crossing of the circular outer circumference, and the supply nozzle is fixedly disposed on the spin axis and the wafer. The position on the first axis of the 贝 上 上 , , , , , , , , , , , , , , , , , , 位置 位置 位置 位置

When the angle range is turned, the supply nozzle moves according to I, the direction of the rotation of the load port and the speed and direction of the rotation speed, the direction of the first axis, and the direction of the rotation axis or the direction away from the rotation axis. The result of the synchronization control is such that the supply nozzle always traverses the location toward the first axis of the wafer. In addition, when aligning with the alignment mechanism, in addition to the cost of the equipment for the alignment mechanism, it is also necessary to shift from the position where the alignment is performed to the time of the rotary stage 103065.doc - 42-1284350. In addition, the accuracy of the alignment depends on the accuracy of the movement of the robot arm. Therefore, it is also possible to arrange the wafer on the stage so that the stage rotates around the rotating shaft (middle, shaft) and direct the supply nozzle of the processing fluid (reactive gas) toward the pair. When the first axis orthogonal to the axis, the point where the outer periphery p of the wafer passes, and the traversing point fluctuates with the rotation, the supply nozzle is slid along the first axis in accordance with the fluctuation, and is supplied to the processing. Fluid (refer to Figure 105, etc.). Preferably, the wafer is disposed on the stage, and the stage is rotated around the rotation axis (the central axis), and by calculating the first axis orthogonal to the rotation axis, the front η outer circumference passes through each moment. The location of the treatment fluid (reactive oxygen) supply nozzle depends on the arrow (4) according to the calculation results of other fans, along the first axis to adjust the position, and always toward the aforementioned body (refer to Figure 1〇5 Wait). . . . to supply the processing flow mechanism: the alignment mechanism for the γ γ core correction can simplify the device rationality: since the material (4) can be omitted, the w body can also calculate the wearing time at each moment. For the position adjustment and processing, "and the supply of the fluid for the supply nozzle processing is performed. At this time, the position of the outer peripheral portion of the wafer can be measured along the rotation side of the stage... The upstream of the supply nozzle is calculated. According to the measurement result, the calculation can be performed on the entire circumference of the wafer, and the calculation of the position of the nozzle is performed on the entire circumference of the wafer, and then the fluid is processed. The substrate peripheral processing apparatus may further comprise: - 103065.doc - 43 - 1284350 The stage is configured to perform the aforementioned wafer rotation; and the circumference of the rotating shaft (central axis) ♦ processing fluid (reactivity) a supply nozzle of the gas slidably disposed along a first axis orthogonal to the rotation axis; and a calculation unit that calculates a position of each of the time points of the outer circumference of the wafer to the first axis; And will always be the same

The nozzle position adjusting mechanism adjusts the position along the first axis in accordance with the calculation result of the fluid supply nozzle toward the passing point (see Fig. 1〇3 to Fig. 1〇5, etc.). Further, the reactive gas supply mechanism may have a supply nozzle that is slidable along a first axis orthogonal to a central axis of the stage, and the stage holds the wafer and is located at the central axis. In the peripheral rotation, the step further includes a calculation unit that calculates a first axis orthogonal to the central axis, and a point at which each of the outer peripheral portions of the wafer passes, and the supply nozzle of the processing fluid is based on the calculation result. The positional adjustment is performed by the first axis, and the processing fluid is always supplied toward the passing point (refer to FIG. 103 to FIG. Outside the wafer at the location, the calculation unit must include a peripheral position measuring device for measuring the wafer. (Effects of the Invention) According to the present invention, by heating the outer peripheral portion of the substrate and spraying the reactive gas on the outer peripheral portion of the heating, the unnecessary substance can be effectively removed. By providing a heat absorbing mechanism on the stage, heat is transferred from the outer peripheral portion to the inner portion of the outer peripheral portion of the substrate, and in the case where the heat is directly applied to the heater, the heat absorbing mechanism can absorb heat. Thereby, it is possible to prevent the film and wiring from the inner peripheral portion of the substrate from becoming f. Further, even when the reactive gas is vaporized from the outer side of the substrate to the inner side, the reaction can be suppressed. Thereby, it is possible to prevent damage to the outer circumference of the substrate: the inner portion. [Embodiment] Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings. 1 to 3 show a first embodiment of the present invention. First, the substrate to be processed is explained. As shown in the assumed lines in Figures i and 2, the substrate is formed as a semiconductor wafer 90 and formed into a circular thin plate shape. As shown in Fig. 3, the upper side of the circle 90, i.e., the side of the surface, covers the film 92 containing the photoresist. The absorption wavelength of the photoresist is 1500 nm to 2000 n. The film 92 covers not only the entire upper surface of the wafer 9 but also passes through the outer end surface to reach the outer periphery of the back surface. The film of the outer peripheral portion of the back surface of the circle 9 () is removed as an unnecessary substance. The present invention is not limited to the film which removes the outer peripheral portion of the back surface of the substrate such as the wafer 9 or the like, and may be applied to the side surface of the substrate. As shown in FIGS. 1 and 2, the substrate peripheral processing apparatus includes a frame 5A, a stage 1G as a substrate supporting mechanism for supporting the wafer 90, and a radiation twister. The laser heater 20 and the electropolymerization head 30 as a reactive gas supply mechanism. The frame 5 has a bottom plate 51 having a perforated disk shape, and a cylindrical peripheral wall 52 projecting from the outer periphery of the bottom plate n. 'and form a ring-shaped L-shaped ring, and is fixed on the pedestal not shown on the figure. 103065.doc •45- 1284350 On the inside of the frame 50, surrounded by the carrier 10 is arranged. The stage 10 and the frame wood 50 concentric, and forming a circular observation plane than the perimeter wall 52 The side surface of the circumference is formed with a tapered shape which is reduced in diameter. The stage 1 is connected to a rotation driving mechanism not shown, and is rotatable around the central axis. Further, a solid load σ 10 may be formed. The rotary drive mechanism is coupled to the frame 5A, and the frame 50 is rotated. On the upper surface 10a (support surface, front side) of the stage 10, the center is aligned and the wafer 90 to be processed is horizontally disposed. A vacuum or electrostatic suction chuck mechanism is inserted into the table 1G. By the suction chuck mechanism, the wafer 9 can be sucked and fixed on the support floor 10a of the stage 1 , but the pattern The diameter of the support surface i〇a of the support wafer 90 is slightly smaller than the diameter of the circle 90 forming the circle y. Therefore, the wafer 9 is disposed on the carrier 1 In the shape of the crucible, the outer circumference of the outer circumference of the wafer 1G slightly protrudes outward in the radial direction. That is, the outer circumference of the wafer 90 is located on the virtual surrounding stage (7). The amount of protrusions on the outer circumference of the wafer 9G (the width of the annular surface C) is 3 to 5 _. Thereby, the back surface of the wafer 9 is exposed all the way. The portion of the outer narrow portion is opened, and the portion of the inner side of the narrow outer peripheral portion is abutted on the upper surface of the stage 1 and is covered. The wafer is placed on the stage 1 The outer peripheral portion of the back surface of 90, that is, the position at which the portion to be processed is located is the processed position p. The material of the carrier stage 10 is placed on the hypothetical surface (elongated surface) in which the upper surface is extended outward in the radial direction. The thermal conductivity is good, and it does not cause metal contamination, such as 103065.doc -46-1284350. In order to ensure the corrosion resistance to the reactive gas, an aluminum oxide layer formed by anodization may be disposed on the surface, and Soak the gas resin of ptfe or the like. A heat absorbing mechanism for absorbing heat from the upper surface 10a is provided on the stage 10 of the substrate peripheral processing apparatus. Specifically, the inside of the stage 10 is hollow, and a refrigerant chamber 41 (heat absorption mechanism) is formed. The refrigerant chamber 41 has a sufficient content machine. The refrigerant chamber 41 reaches the entire area of the stage 1 (the entire circumference in the circumferential direction and the entire radial direction φ). In the refrigerant chamber 41, the refrigerant supply path 42 is connected to the refrigerant discharge path 43. These paths 42, 43 extend from the stage 10 through the interior of the central shaft. The upstream end of the refrigerant supply path 42 is connected to a refrigerant supply source not shown. The refrigerant supply source is supplied as a refrigerant to the refrigerant chamber 41 via the refrigerant supply path. The refrigerant chamber 41 is filled with water. The water temperature is normal temperature. Further, the refrigerant is discharged from the refrigerant discharge path 43 and the new refrigerant is discharged.

The supply path 42 is supplied. The refrigerant of W can also be returned to the refrigerant supply source, and then re-circulated for cooling. In addition to water, the refrigerant can also be used with air and helium. The compressed fluid may also be forced to be sent to the refrigerant chamber 41 to flow inside the refrigerant chamber 41. The heat absorbing mechanism may be provided on at least the outer peripheral portion of the stage i (the near inner portion of the outer peripheral portion of the wafer 9 q), or may not be provided at the central portion. The stage 10 is located at a bottom plate of the frame 50 - a middle t-degree of "double: > z. The diameter of the stage 1G is larger than the inner circumference of the bottom plate 51. Thereby the inner edge of the bottom plate 51 is loaded. The radially inner side of the lower side (back side) of the table 1G. A labyrinth seal 103065.doc -47-1284350 60 is provided between the lower side of the load D 1G and the inner end edge of the bottom plate 51. The labyrinth seal 60 has a top and bottom The labyrinth ring 61, 62. The upper labyrinth ring 61 has a plurality of hanging pieces 61a forming a plurality of rings concentric with the stage 1 and fixed to the underside of the stage ίο. The lower side labyrinth ring 62 has A plurality of protruding pieces 62a of a plurality of rings which are concentric with the frame 50 and the stage 1 are formed, and are fixed on the bottom plate η of the frame. The hanging pieces 6 ia and the protruding pieces 62a of the upper and lower labyrinth rings 61'62 are formed. Engaging each other. An annular space is formed between the frame 50, the stage 10 and the labyrinth seal 6〇. A suction path 51c extending from the valley of the labyrinth ring 62 is formed on the bottom plate 51 of the frame 50. The suction path 51 (: is connected to a suction row including a vacuum pump and an exhaust gas treatment system via a pipe) The air supply device (not shown). The suction path 51c, the piping and the suction and exhaust device constitute a "suction mechanism for the annular space". The portion of the bottom plate 51 of the frame 50 that is radially outward of the labyrinth ring 62 is oriented. The lower side of the periphery of the stage 10 is separated from the lower side, and the laser unit 2 (irradiation unit) of the laser heater 2 is mounted. The laser heater 20 has a laser light source 21 of a point light source, and an optical fiber via the optical fiber The light transmitting system 23 such as a cable is optically connected to the above-described irradiation unit 22 of the laser light source 2. The laser light source 21 emits a laser having an emission wavelength of 808 nm to 940 nm by using an LD (semiconductor) laser light source. (Hot ray) The illuminating wavelength may be set in a range corresponding to the absorption wavelength of the photoresist film 92 covering the wafer 90. The laser light source 21 is not limited to the LD, and various yaG, excimer, etc. may be used. If the laser wavelength is easily absorbed by the film as much as possible, it is better to use the absorption wavelength of the film 92. The light source 21 can also be accommodated inside the unit 22, and omitted. Optical transmission system such as optical fiber 2 3. The laser irradiation unit 22 is larger than the plasma head 30 in the processing position P. As shown in Fig. 2, the laser irradiation unit 22 is spaced apart from each other in the circumferential direction of the frame 5 and the carrier 10. A plurality of (three in the figure) are provided at intervals. As shown in Fig. 1, the laser irradiation unit is disposed on a line L1 which is orthogonal to the extended surface of φ by the processed position p. The laser irradiation direction of 22 is directed upward along the line L1, and is orthogonal (intersecting) with the processed position p, that is, the outer peripheral portion of the wafer 90 provided on the stage 10. The laser irradiation unit 22 houses an optical member such as a convex lens and a cylindrical lens. As shown in FIG. 3, the laser light from the light source 21 is directed toward the processed position P, that is, the wafer disposed on the stage 10. The outer peripheral portion of the back of the 9th. Further, a focus adjustment mechanism is inserted into the laser irradiation unit 22. With the focus adjustment mechanism, φ can also be shifted up and down from the processed position P, except that the focus of the laser is exactly aligned with the processed position p. Thereby, the area of the light collecting path on the outer peripheral portion of the wafer 90 and the area to be heated, and the density of the radiant energy and the heating temperature of the heated portion can be adjusted. The focus adjustment mechanism includes a slide mechanism that causes the cluster lens in the laser irradiation unit 22 to slide in the optical axis direction. The focus adjustment mechanism may also be such that the entire laser irradiation unit is slid in the optical axis direction. The optical transmission system 23 and the illumination unit 22 constitute an "optical system" in which the heat source from the light source 21 is not diverged near the position to be processed and is transmitted toward the processed position. 103065.doc -49-1284350 As shown in FIG. 1, a plasma spray head 3 is mounted on the peripheral wall 52 of the frame 50. The plasma heads 30 are disposed on the outer side in the radial direction of the stage 10 with respect to the processed position P, and are disposed in a direction different from the position to be processed P of the laser irradiation unit 22. As shown in Fig. 2, the plasma discharge heads 30 are provided at equal intervals in the circumferential direction of the stage 10, and are provided in the same number as the laser irradiation unit 22 (three in the figure). Further, they are arranged in the same circumferential position as the laser irradiation unit 22 or in pairs on the downstream side of the laser irradiation unit 22 in the wafer rotation direction. The plasma jet head 30 is formed in a cylindrical shape having a fine section of each of the segments, and the axis is arranged horizontally so as to be along the radial direction of the stage 10. As shown in FIG. 3, a pair of electrodes 31, 32 are housed in the plasma discharge head 30. These electrodes 3i,w form a double ring shape and form a space 3〇a which forms a ring-shaped atmospheric pressure therebetween. The opposite surfaces of at least one of the electrodes 31, 32 are covered with a solid dielectric film. A power source (electric field applying mechanism) not shown in the drawing is connected to the inner electrode 3 1 , and the electrode 32 is grounded at the same time. The above power supply is outputting a pulse-like voltage

To the electrode 31. The pulse rise time and/or fall time must be less than 1 ’. The f field strength of the interelectrode space 3Ga must be called (four) π-, and the frequency must be 〇.5 kHz or more. Further, in addition to the pulse voltage, a continuous wave voltage such as a sine wave or the like can be output. The interelectrode space 30a is connected to a processing gas supply source (not shown) at a proximal end portion (upper end) facing the side opposite to the side of the stage 1a of the interelectrode space 30a. The processing gas of the processing gas supply source, such as the storage oxygen #, is supplied to the electricity in an amount of (four), as shown in FIG. 3, which is best shown on the side of the stage facing the plasma head 30. 103065.doc • 50· 1284350 The end portion is provided with a discharge port forming member 33 made of a resin having a circular plate shape. A discharge port 3〇b is formed in a central portion of the discharge port forming member 33. The discharge port 30b is connected to the downstream end of the stage 1 side facing the inter-electrode space 3A, and the axis is oriented horizontally along the radial direction of the stage 10, and is located on the upper surface of the stage 10a. It is even lower than its height and opens at the end of the plasma spray head 30. The end of the plasma jet nozzle 3 and the discharge port 3〇b are arranged in the vicinity of the processed position P, and when the wafer 9 is placed on the stage 1〇, the pole is close to the outer edge. A reactive gas G that plasma-treats the process gas is sprayed along the axis of the discharge port. This ejection direction is orthogonal to the irradiation direction of the laser heater plus the laser light L (forming an angle). The intersection of the ejection direction and the irradiation direction is located substantially on the back surface of the protruding outer peripheral portion of the wafer 9A on the stage 1A. On the end surface of the plasma spray head 30, a suction port 3〇c is formed between the end surface forming member 34 and the discharge port forming member 33. The suction port 3〇c is formed in a ring shape so as to surround the discharge port 30b. As shown in Fig. ,, the suction port is connected to the suction and exhaust device (not shown) via the suction path 3〇d formed in the plasma discharge head 3〇. The suction port 30c, the suction path 30d, and the suction and exhaust device constitute a "suction mechanism in the vicinity of the discharge port" and even constitute a "suction mechanism for the annular space". The normal piezoelectric slurry processing apparatus is constituted by the electric discharge head 30, the above-mentioned power source, the above-mentioned processing gas supply source, and the above-described suction and exhaust device. A method of removing the film 92c on the outer peripheral portion of the back surface of the wafer 90 by the substrate peripheral processing apparatus of the above configuration will be described. The wafer to be processed is transported by a robot or the like, and is placed on the stage 10 with the center of the same pattern 103065.doc -51 - 1284350 and sucked and clamped. The entire circumference of the outer peripheral portion of the wafer 90 protrudes outward in the radial direction of the stage 10. On the back surface of the protruding outer peripheral portion of the wafer 90, that is, the processed position p is substantially focused, and the laser irradiation unit 22 from the laser heater 2 emits the laser light L. Thereby, the film 92c on the outer peripheral portion of the back surface of the wafer 9 can be spot-shaped (partially) radiantly heated. Since the dots are concentrated, the laser energy can be imparted to the irradiated portion with high density (the wavelength of the laser corresponds to the absorption wavelength of the film 92c, and the absorption efficiency of the laser energy can be further improved). By using this, the spotted portion of the film 92c can be instantly heated to a few hundred degrees (e.g., 600. 〇. Because of the radiant heating, it is not necessary to bring the heated portion of the wafer 90 into contact with the heating source, and it does not occur. At the same time, a processing gas (oxygen or the like) is supplied from the processing gas supply source to the interelectrode space 3〇a of the electropolymerizing head 30, and a pulse electric field is applied from the pulse power supply to the electrode 3 1 'in the interelectrode space 30a. Thereby, a normal-pressure glow discharge plasma is formed in the interelectrode space 3〇a, and a reactive gas such as ozone and oxygen radicals is formed from a treatment gas such as oxygen. The reactive gas is ejected from the ejection port 30b. The film is sprayed to the localized portion of the back surface of the wafer 9 to cause a reaction. Thereby, the film 92c at the portion can be removed and removed. Since the portion is locally sufficiently heated, the etching rate can be sufficiently increased. 'With the suction mechanism, the gas around the portion where the etching treatment is performed can be sucked into the suction port 3〇c and exhausted through the suction path 3〇d. Therefore, it can be quickly moved around the portion where the etching process is performed. In addition to processing the completed reactive gas and the residual by-product, the etching rate is increased, and the gas can be prevented from flowing into the front side of the wafer 90. 103065.doc -52- 1284350 2: The attraction mechanism will process the completed reaction The gas is exclusively guided from the periphery of the circumference of the circle 90 to the labyrinth seal 6 , direction, and y draws the exhaust gas from the gap of the labyrinth seal 60. It can also prevent the reactive gas from the labyrinth seal 6 The inside of the radial direction flows out. Μ At the same time as the above operation, the stage ι is rotated by the rotation drive mechanism. This allows the removal of the film 92e on the outer peripheral portion of the back surface of the crystal H90, which can be removed in the fiscal direction. The film on the back of the kitchen is 92〇

The seal between the stage 10 and the frame 50 can be smoothly performed without the friction of the frame 50 by using the labyrinth seal 6 〇. Further, with the above-described addition, I At s m Λ 4 knives, the heat of the heated portion of the wafer 90 can be conducted to the inner side of the wafer 90 in the radial direction. This heat is transferred to the stage 1G via the contact surface of the wafer 9 and the carrier, and the heat is absorbed by the water filled in the green refrigerant chamber 41. Thereby, the temperature rise of the inner portion of the heated portion of the wafer 9 is suppressed. Therefore, in addition to suppressing the deterioration of the film 92 in the inner portion of the wafer 9 by heat, even if the reactive gas flows into the center side of the upper surface of the wafer 9, the reaction with the film 92 can be suppressed. Thereby, it is possible to prevent the film from being damaged, and it is possible to maintain a good quality. Since the amount of water stored in the refrigerant chamber 41 is extremely large, the heat absorption capacity can be sufficiently ensured. Further, by replacing the water in the refrigerant chamber 41 through the supply path 42 and the discharge path 43, the heat absorbing ability can be further sufficiently maintained. Thereby, the temperature rise of the inner portion of the outer peripheral portion of the wafer 9 can be surely suppressed, and the damage of the film 92 can be prevented. The inventors used the same apparatus as in Fig. 1 to make the outer edge of the wafer protrude from the stage 10 by 3 mm 'the temperature of the water in the refrigerant chamber 41 was 5 〇, 23 5 〇 c 103065.doc • 53- At 1284350 and 5.2 C, the wafer surface temperature was measured from the distance in the radial direction from the heated portion of the outer edge of the wafer. The output conditions of the laser heater 2 are as follows.

Laser emission wavelength ·· 808 nm Output: 30 W Local heating part diameter: 0.6 mm Output density: 100 w/mm2

Oscillation pattern: continuous wave The results are shown in Figure 4. In the figure (a), the periphery of the heated portion of the outer edge of the wafer (the position slightly separated from the side) is taken as the origin of the horizontal axis, and the housing (b) is heated by the outer edge of the wafer. The position next to the part is the origin of the horizontal axis. When the water temperature is 23.5 〇C at room temperature, the heated portion of the outer edge of the wafer is near-by the heat conduction from the heated portion. The degree of sputum (g 4 (4))' further reaches the degree of % 〇t (food 4 (b)) (in addition, the heated part reaches 6 〇吖 or more) beside the heated part, but the inner shoulder is only 3 sides of the inner diameter The portion is lowered to the degree of scratching, and further maintained at (10) below the central portion of the inner side of (4), whereby it is confirmed that even if the ozone of the compatible emulsion flows to the central portion of the side surface of the wafer surface, the reaction is not easily caused. Damage to the film 92 can be suppressed. =, the inventors used the same device as the figure to make the outer edge of the wafer from the stage 1. When the laser output is (9)w and (10)w, the infrared thermal imager (therm〇gr h hot part is near (4), the money is sharp (4), and the M 81 outer lining is added as follows. Direction of the wafer surface Temperature. 103065.doc -54 1284350 Wafer Direct Control: 300 mm Local Heating Part Diameter: 1 mm Stage Number of Turns: 3 rpm

The water temperature in the stage refrigerant chamber is 23.5 〇C. As a result, as shown in Fig. 5, the surface temperature beside the heated portion of the outer edge of the wafer is about 300 ° C (the heated portion reaches 700 to 800 ° C), but From the inside to the radial direction, the wafer temperature drops sharply, and it drops i〇〇°c to the inner side where only the 3 mm diameter Φ is inward. Thereby, it was confirmed that the damage of the film in the central portion of the wafer can be suppressed. Next, other embodiments of the present invention will be described. In the following embodiments, the same reference numerals will be given to the structures corresponding to the above-described embodiments, and the description will be appropriately omitted. The second chamber portion 41L of the first chamber portion 41U and the lower side (opposite side to the support surface) separated from the upper side (support surface side) by the horizontal partition plate is not shown in the stage 10 of FIG. The partition plate 45 is smaller than the inner diameter of the peripheral wall of the stage 1 and the upper and lower first and second chamber portions 41U, 41L are connected to the central portion of the partition plate 45 on the outer peripheral side of the partition plate 45 to constitute a refrigerant supply path. At the end of the tube of 42, the refrigerant supply path 42 is connected to the upper first chamber portion 4iu. Here, 'the end portion of the bottom plate constituting the refrigerant discharge path 43 is connected to the center portion of the bottom plate of the stage 10, and the refrigerant discharge path 43 is connected. The second chamber portion 41L, the first one, and the second chamber portions 41U, 41L on the lower side constitute a refrigerant passage as a heat absorbing means. The refrigerant is introduced from the refrigerant supply path 42 into the first chamber portion on the upper side (support surface side) 103065.doc -55 - 1284350 is a central portion of 41U, and flows radially outward in the radial direction. Then, the outer edge of the partition 45 is spread, and the first chamber portion 41L of the lower side (the side opposite to the support surface) is entered. Flows inward in the radial direction and is discharged from the central refrigerant The diameter 43 is discharged. ' Thereby, the entire stage 1 can be surely cooled, and the wafer 9 can be surely cooled evenly, and the upper film 92 can be surely protected. Since the refrigerant is first introduced to the support surface 10a, the wafer is approached. The first chamber portion 4iu on the side of the 9th side can increase the heat absorption efficiency in a step of φ. The complaints of Fig. 6 are arranged in parallel with the refrigerant supply path 42 and the refrigerant discharge path 43, but as shown in Fig. 7, the refrigerant discharge path can also be used. "The inside is formed into a double tubular shape by the refrigerant supply path 42. In the aspect of Fig. 8, a refrigerant passage "is provided as a heat absorbing means inside the stage 1", and the refrigerant passage 46 is formed in a spiral shape. The refrigerant supply path 42 is connected to the outer peripheral side of the scroll-shaped refrigerant passage 46. The refrigerant discharge path 43 is connected to the end of the center side. Thereby, the refrigerant can flow in a spiral shape from the outer peripheral side φ the inner peripheral side of the refrigerant passage 46. Thereby, the side close to the outer peripheral portion of the wafer 9 can be sufficiently cooled. Therefore, it is possible to surely absorb the heat from the outer periphery of the wafer 9 while reliably protecting the upper film 92. The medium-side refrigerant discharge path 43 and the outer peripheral side refrigerant supply path 42 pass through the stage 1 The center axis 丨丨 is inside, but the detailed drawing is omitted. The refrigerant supply path 42 extends between the bottom plate of the stage 10 and the refrigerant passage 外侧 from the side of the center shaft 11 to the outside in the radial direction, and is connected to the outside of the refrigerant passage 乜. When the stage 10 is fixed and the frame 50 is rotated, it is not necessary to pass the refrigerant supply path 103065.doc -56 - 1284350 42 through the center shaft 1 1. The structure from the outer peripheral side of the stage 10 to the center does not Limited to the scroll structure of Figure 8. The refrigerant passage as shown in the stage 1 of Fig. 9 has a plurality of annular paths 47 formed in a concentric shape, and a communication path 48 connecting the annular paths 47. A plurality of communication paths are not provided at equal intervals in the circumferential direction between the paths 47. The communication path 外侧 on the outer side in each radial direction and the communication path 48 on the inner side in the radial direction are separated from each other in the circumferential direction φ by the i-shaped annular path 47. Further, the outermost annular path 47 is connected to the refrigerant supply path C at a plurality of positions spaced apart at equal intervals in the circumferential direction. The central end portion of the refrigerant discharge path 43 is connected to the central annular path 47. As a result, as shown by the arrow in FIG. 9, the refrigerant flows in the circumferential direction along the outer annular path 47, and then flows into the annular path 47 on the inner side. The flow is again branched in the circumferential direction, and thus flows back to the center from the outer peripheral side of the stage 10 as shown in Fig. 1 (the hook of the hook (b) is the same as that of the figure, and the inner shape is formed into a cavity. In the refrigerant chamber 41, the refrigerant supply path 42 is divided into several It is connected to a position that is separated at equal intervals in the financial direction of the outdoor portion of the refrigerant. The refrigerant discharge path extends from the central portion of the refrigerant chamber 41. Thereby, the refrigerant V flows into the outer peripheral portion of the refrigerant to 41 and flows toward the center. The chamber 41 constitutes a heart-shaped refrigerant passage. Further, in FIGS. 6 to 10, the refrigerant supply path 42 and the refrigerant discharge path 43 may be reversed each other. Thus, the flow of the refrigerant in the upper refrigerant chamber 4iu is from the outer peripheral side. The heat absorbing means which is not in the form of Fig. 11 uses a heat absorbing element instead of the cold 103065.doc -57-1284350 medium. That is, the stage 10 contains a Peltier element Pe as a substrate heat absorbing mechanism. The Peltier element Pe has the heat absorbing side facing the upper side (the upper side of the stage 1 〇a side), and is disposed near the upper surface 1〇a of the stage 10. Thereby, the heat of the wafer 90 can be absorbed through the upper plate of the stage 10. Further, a fan, a heat sink, and the like which are required to promote heat dissipation on the heat radiating side of the self-instrumental element Pe can be provided on the lower side of the post element Pe of the stage 1 . The heat absorbing mechanism of the embodiment of the present invention is provided in substantially all of the region φ of the stage 1 and absorbs heat from the entire substrate supporting surface 10a. However, as shown in FIGS. 12 and 13, it may be provided only on the stage 1 〇 Outside the week. On the other hand, an annular partition wall 12 is provided concentrically inside the stage. The stage 1 is divided into the outer peripheral region 10Ra and the central region i〇Rb by the annular partition wall 12. The refrigerant supply path 42 and the refrigerant discharge path 43 are connected to the outer peripheral region 1A Ra outside the annular partition wall 12. Thereby, the refrigerant chamber 41 (heat absorption mechanism) is formed in the outer peripheral region 1 (the heat absorption mechanism). Further, the central region 1〇Rb inside the annular partition wall 12 does not become the refrigerant φ chamber, and a non-arrangement portion of the heat absorbing mechanism is formed. The outer peripheral portion of the circle 90 protrudes outward in the radial direction from the outer peripheral region 1〇Ra of the stage 1。. The annular portion near the inner side of the protruding portion abuts and supports the outer peripheral region 1〇Ra of the stage 1,, The central portion of the inner side is abutted and supported by the central portion 10Rb of the stage 10. Thereby, the heat from the heated portion of the outer peripheral portion of the wafer 90 is transmitted to the portion near the inner side, and the outer peripheral region 丨〇11& In addition, the portion of the center of the wafer 90 that is not related to heat conduction is not subjected to endothermic cooling, thereby saving the heat source. 103065.doc -58- 1284350 The heat absorbing mechanism provided only in the outer peripheral region 1 () Ra of the stage, The aspect shown in Fig. 6 to Fig. 11 can also be applied. As shown in Fig. 13, the irradiation unit 22 of the laser heater is disposed above the wafer 90. Partially twisted on the side, here by self-reactive gas supply The supply nozzle is supplied with a reactive gas to remove the unnecessary film on the front side of the outer peripheral portion of the wafer 90. In addition, in FIG. 13, as shown by the line, the unnecessary film of the outer peripheral portion of the wafer 9 is removed. The laser irradiation unit 22 can be disposed below the wafer 9g. In the first embodiment, the focus adjustment mechanism is provided in the laser irradiation unit 22. The following processing operations can be performed using the focus adjustment mechanism: As shown in FIG. 14, in general, a notch portion 93 such as a groove is provided at one of the circumferential directions of the outer peripheral portion of the wafer 90. As shown in the figure (4), the laser irradiation unit 22 is on the wafer. When the size of the upper illuminating point LS (the width of the irradiation range) is maintained and fixed, the edge of the groove 93 may not be processed (the portion of the slash portion of the figure that is not processed). Therefore, as shown in the figure (b) ), when the groove % reaches the processed position, the focus of the laser irradiation unit 偏差 is deviated in the optical axis direction by the focus adjustment mechanism. Thereby, the irradiation point U can be enlarged, and the groove can also illuminate the edge with the edge. Shot, as shown in Figure (4), can also be removed The film at the edge of the groove 93. Due to the expansion of the irradiation point (4), the energy density is lowered. Therefore, it is desirable to simultaneously increase the rotation of the laser or reduce the rotational speed of the wafer, «the energy per unit area and the expansion of the irradiation point. The same degree is obtained. After the irradiation point Ls passes through the groove 93, the size of the irradiation point u is restored to the original size. The figure shows that the notch portion of the outer periphery of the wafer 90 is provided with a concave (four), not 103065.doc -59· 1284350 When the orientation plane is not provided without providing the groove 93, the film of the edge of the plane can also be oriented by performing the same operation (including the energy adjustment operation per unit area). As shown in FIG. 5 and FIG. The processing width adjustment can also be performed using the focus adjustment mechanism ' of the laser irradiation unit 22. As shown in FIG. 15 'the focus of the laser beam L from the laser irradiation unit η is substantially aligned with the outer circumference of the wafer 90 by the focus adjustment mechanism, and the spot diameter of the range of the wafer on the % of the wafer is about 1 mm in diameter. In this case, the wafer 9 called the peripheral film 92c can be removed about! The width of mm can be set to the width of the melon. In the case where the same laser irradiation unit 22 is used, it is desired to obtain a wider width than the above. As shown in Fig. 16, the focus of the laser L is moved away from the wafer 90 by the focus adjustment mechanism. Thereby, the irradiation spot diameter on the wafer 9 can be enlarged, and the processing width can be enlarged. For a processing width of approximately 3 mm, focus adjustment is performed with a spot diameter of approximately 3 mm on the wafer. In the figure, the focus of the field L is adjusted so as to be farther than the wafer. However, the focus can be concentrated at a position closer to the wafer 90, and then the wafer 9 is enlarged. As shown in Fig. 17, the 'out of focus adjustment of the wide-spray laser irradiation unit 22' can also be adjusted by sliding in the radial direction. The laser irradiation unit 22 can be slightly slid in the radial direction of the stage 1 and further in the half control direction of the wafer 9 by the steering direction sliding mechanism 22S'. The laser irradiation unit is substantially aligned with the focus on the outer circumference of the square 90 and is set such that the illumination point on the wafer is about 丨 mm. ,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,, 3 In the manner of the position of the face, the laser irradiation unit is positioned in the radial direction of the wafer 90. The wafer 90 is rotated and processed while maintaining the radial direction position. When the wafer 90 is rotated exactly once, as shown by the broken line in Fig. 17, the irradiation unit 22 is deflected toward the outer side of the radius by the sliding mechanism 22S'

Roughly the same size (about 1 degree. At this position, the wafer 90 is rotated once) and processed. After that, after rotating - times, as shown by the two-point chain line in Figure 17, by the sliding mechanism 22S 'The irradiation unit 22 is stepped outward in the direction of the outer diameter by about the same size as the irradiation spot diameter (about one surface). At this position, the circle 9 turns further and is processed once, thereby making the processing width 3 Figure 18 (a) and (b) show that the substrate fixing mechanism is inserted into the stage 10 of the vacuum chuck mechanism. On the upper plate of the stage 1 containing the heat conductive metal, a lot of suction is formed. The hole 13 is connected to a suction mechanism such as a vacuum pump (not shown) via the suction path 。. The suction hole is formed as small as possible. This ensures the carrier 1 and the wafer sufficiently. 9接触 contact area. Further, the heat absorption efficiency of the wafer 9〇 can be sufficiently ensured. Fig. 19(a) and (b) show the change of the vacuum chuck mechanism. The sorption is formed on the top of the stage 1〇. The groove 15 is substituted for the point-shaped suction hole 13. The absorbing groove 15 has a concentric circle The plurality of annular grooves 16 and the communication grooves 17 connecting the annular grooves 16 are provided. The communication grooves 17 are provided at equal intervals in the circumferential direction between the adjacent annular grooves 16. The communication groove 17 and the communication groove 17 on the inner side in the radial direction are circumferentially opposed to each other via one annular groove 6

1〇3〇65.dOC -61 - 1284350 is configured on the deviation. The annular groove 16 and the communication groove 17 are as narrow as possible to ensure the contact area between the stage 10 and the wafer 90 and the heat absorption efficiency of the wafer 90. 20 and 21 show a modification of the suction groove 15. The communication groove 17 of the suction groove 15 passes through the annular groove 16 in the middle from the innermost annular groove 16 to the outermost annular groove 16, and extends straight in the radial direction of the stage 10. The communication grooves are arranged at intervals of 90 degrees in the circumferential direction of the stage. φ As shown in Fig. 21, an annular cooling chamber 41C is formed inside the stage 10 as a heat absorbing mechanism. The annular cooling chamber 41C is disposed concentrically with the stage 在 on the outer peripheral portion of the stage 1A. The refrigerant supply path 42 is connected to one of the circumferential directions of the annular cooling chamber 41C, and the refrigerant discharge path 43 is connected to the opposite side of the 180 degree, but the drawings are omitted. In Figs. 18 to 21, the chuck mechanism is disposed on substantially all of the upper surface of the stage 1'. However, as shown in the embodiment of Figs. 22 and 23, the chuck mechanism is provided only on the outer peripheral side region of the upper surface of the stage 10. φ An annular convex portion 10b is formed on the outer circumferential side of the stage 10. Corresponding to the ', a shallow concave portion 10c is formed in a central portion of the stage 10 to observe a circular shape. On the flat upper surface of the annular convex portion 10b of the stage 10, a plurality of (for example, three) rings are formed concentrically. The grooves 16 are connected by the communication grooves 17. In the inside of the stage 10, an annular cooling chamber 41C is provided in the same manner as in the above-described FIG. 9, and only the upper surface of the annular convex portion 10b on the outer peripheral side of the stage 10 and the back of the wafer 90 are 103065.doc-62. - 1284350 Face contact' while sucker wafer 90. The concave portion 1〇C' is formed in the central portion of the stage 10 by the private △ field, and thus is not in contact with the wafer 90. Thereby, the contact area between the stage 1 and the wafer 90 can be minimized, and the microparticles generated by the accompanying contact can be reduced. The annular convex portion 1 Ob is cooled to the 41C cold portion by the annular cooling member. Further, the portion in contact with the annular projection lb in the wafer 9 is the inner portion of the outer peripheral portion of the irradiated portion. Therefore, when the heat of the laser irradiation is conducted from the irradiated position of the outer peripheral portion of the wafer 9 to the inner side, the heat is absorbed by the annular convex portion i〇b, and the heat does not reach the central portion of the wafer 90. #这, the function as the heat absorbing mechanism of the stage 10 can be sufficiently ensured. The inventors investigated the relationship between the contact area of the wafer and the stage and the generation of fine particles. When the wafer has a diameter of 300 mm and is attracted to a stage (contact area of 678.2 cm2) having the same structure as that of Figs. 2 and 21, the number of particles having a diameter of 〇2 pm or more is about 22,000. Further, after absorbing the stage (contact area: 392.7 cm2) having the same configuration as that of Figs. 22 and 23, the number of particles having a statistical orientation of 0.2 μm or more is about woo. By this, it is found that the number of fine particles generated can be greatly reduced by reducing the contact area. The substrate peripheral processing apparatus shown in Fig. 24 has a plasma head 3 which is separated from the treated portion and which is fixed to the bottom plate 51 of the frame 50 in parallel with the laser irradiation unit 22 of the laser heater 2. The end face of the plasma spray head 3 is oriented directly upward. A peripheral gas wall 52 of the frame 50 is formed with a reactive gas path 52b extending from the end opening of the plasma jet nozzle 3. The end of the reactive gas path 52b reaches the inner peripheral surface of the peripheral wall 52, where the small cylinder is connected. The discharge nozzle 36 is formed. The discharge nozzle 36 constitutes a discharge port forming member, and the inside thereof constitutes a discharge port 103065.doc • 63-1284350 36a. The discharge nozzle 36 is made of a transparent light transmissive material, such as

The direction from which the discharge port is different from the support surface 1 (the extension surface of the support surface 1) is different from each other (the direction in which the acute angle is formed. - the parent (the side of the radiation heater surface is disposed on the pair of the reactive gas path 52b) Both the frame 5〇 and the discharge nozzle and the plasma head 30 are constituent elements of the “reactive gas supply mechanism.” Since the discharge nozzle 36 is disposed in close proximity to the processed portion of the wafer 9〇, it is possible to The reactive gas such as the emitted ozone does not reach the treated portion in a highly active state and does not diffuse in a high concentration state, and the reaction efficiency with the φ film 92c can be improved, and the etching rate can be improved. Further, the reactive gas is ejected. The direction is not parallel to the back surface of the wafer 90 to form an angle, so that the reaction efficiency with the film 92c can be further improved, and the etching rate can be further increased. Further, although the ejection nozzle 36 enters the laser light from the laser heater 20 It is disposed in the optical path, but since the ejection nozzle 36 has light transmissivity, it does not obscure the laser L. Therefore, the treated portion can be surely heated, and the surname is ensured. In addition, the ejection nozzle 36 may be disposed outside the optical path of the laser L. At this time, 103065.doc -64-1284350: a transparent material is required to form the ejection nozzle 36, and may be used if not recorded. Steel 疋 疋 疋 疋 疋 疋 疋 疋 疋 疋 疋 疋 疋 疋 疋 疋 疋 疋 疋 疋 疋 疋 疋 疋 疋 疋 疋 疋 疋 疋 疋 疋 疋 疋 疋 疋 疋 疋 疋 疋 疋 疋 疋 疋 疋 疋 疋 疋

In the figure, a step is formed on the peripheral wall 52 of the bottom plate, and the step covers the annular upper peripheral wall 53 which is formed in an inverted L shape. The inner edge of the ± peripheral wall is disposed in the vicinity of the discharge nozzle 36, and is disposed in the vicinity of the outer edge of the crystal 90 on the stage 1〇. At the inner edge of the upper peripheral wall 53, an annular groove (and an opening) which is formed to expand toward the inner end and open to the entire circumference of the circumferential direction is formed. The suction path control 53 d. from the groove bottom of the annular groove 53c at the same circumferential position as the discharge nozzle 36, extends to the outer periphery of the upper peripheral wall 53 and is connected to the suction connector 57'. The connection is not shown in the figure. Attracting the exhaust device. Thereby, the processed reactive gas can be sucked from the periphery of the outer peripheral portion of the wafer 90 to be exhausted. The groove 53c, the suction path 53d, and the suction and exhaust device constitute a "suction mechanism of the vicinity of the discharge port φ" and even constitute a "suction mechanism of the annular space". The substrate peripheral processing apparatus shown in Fig. 25 has a structure different from that of the above. That is, the plasma jet head 3 of Fig. 25 is formed in a ring shape corresponding to the size of the stage 10 or even the frame 50, and is disposed concentrically with the upper side of the stage 10 and the frame 50. The plasma spray head 3 can be separated from the stage 10 and the frame 50 by a lifting mechanism (not shown) (the state is not shown), and the peripheral wall 52 of the frame 5 is disposed on the frame 10 and the frame 50. The upper δ is again placed and lowered (this sorrow is shown in Figure 25). After the plasma discharge head 3 is raised to the retracted position, the wafer 90 is placed on the stage 10, and then processed at a position where the low plasma head 30X is lowered 103065.doc - 65-1284350. Inside the plasma discharge head 30X, electrodes 31X, 32X which cover the entire circumference and form a double ring shape are housed. The inner electrode 31X is connected to a pulse power source not shown, and the outer electrode 32X is grounded. By the opposite faces of the electrodes 31A, 32χ, a narrow space 30ax covering the entire circumference of the plasma discharge head 30 is formed. The oxygen-specific gas from the processing gas supply source not shown in the figure is uniformly introduced throughout the circumference of the upper end portion (upstream end) of the inter-electrode space 30, and is often used in the inter-electrode space 30 ax The glow glow is discharged and plasmad to generate a reactive gas such as ozone. The solid dielectric layer is covered on the opposite surface of at least one of the electrodes 31, 32, and is the same as the above-described plasma jet 30. At the bottom of the electric discharge head 30, a reactive gas path 3〇b, x obliquely extending from the lower end (downstream end) of the interelectrode space 3〇ax is formed. Further, a longitudinally extending reactive gas path 52b is formed on the peripheral wall 52 of the frame 50, and the plasma spray head 30X is connectable to the two reactive gas path diameters 30b, x, 52b when the position is set. A base end portion of the discharge nozzle 36 including a light-transmitting material is connected to the lower end portion (downstream end) of the reactive gas path 52b of the frame 50. The discharge nozzle 36 is buried in the peripheral wall 52 so as to form a horizontal direction along the radial direction of the frame 50, and the end portion thereof protrudes from the inner end surface of the peripheral wall 52. Thereby, the processing position P, that is, the outer peripheral portion of the wafer 90 which is not placed on the stage 10 is close to the back side. The discharge nozzles 36 are arranged one-to-one in the same circumferential direction as the laser irradiation unit 22 of the laser heater 20, and are arranged apart from each other in the circumferential direction and in the same number as the laser irradiation. In the case of the lesser, the reaction 103065.doc -66-1284350 generated in the interelectrode space 30ax is ejected from the ejection nozzle 36 through the reactive gas path 30b'x, 52b, and is sprayed to the laser. The portion of the film 92c which is locally heated by the heater 20 is removed. Even if the optical path of the laser light L and the discharge nozzle 36 interfere, as in the embodiment of Fig. 24, since the discharge nozzle 36 has light transmissivity, the laser light L is not blocked. A cover ring 37 is provided at a radially inner portion of the bottom of the plasma spray head 30X. When the plasma discharge head 30X is in the set position, a suction port 3?cx is formed between the end surface of the cover ring 37 which is formed in the shape of a taper φ and the upper side portion of the inner peripheral surface of the peripheral wall 52 of the frame 50. The suction port 30cx is located directly above the outer edge of the wafer 9〇 on the stage 1〇. The suction port 30 is connected to a suction and exhaust device (not shown) via a suction path 3 connected to the bottom thereof. Thereby, the reactive gas can be sucked and processed from the periphery of the outer peripheral portion of the wafer 90. The suction port 3〇cx, the suction path 3〇dx, and the suction and exhaust device constitute a “suction mechanism in the vicinity of the discharge port” and even constitute a “suction mechanism for the annular space.” The cover ring 37 constitutes a suction port forming member. The substrate peripheral processing apparatus of Fig. 26 is the combination of the entire substrate peripheral processing apparatus of Fig. 24 and the annular plasma head 3 of Fig. 25. Therefore, in the apparatus of Fig. 26, the lower side and the upper side are provided. There are two kinds of plasma nozzles π, 3〇x. The lower plasma nozzle 3 is the same as the above-described embodiment, and is used to remove the film 92c on the outer peripheral portion of the back surface of the wafer 90. The upper plasma nozzle 30X is also used. The film 92 (see FIG. 3) of the peripheral portion and the outer end surface of the outer surface of the wafer 90 is removed. Therefore, the bottom portion P of the plasma nozzle of the substrate peripheral processing device of FIG. 26 is different from that of FIG. Formed from the interelectrode space 30ax straight down L stretched on the bottom surface The outlet of the mouth is carried out by the right. The discharge port 鸠X forms the culvert 103065.doc -67-1284350. The lid of the plasma spray nozzle is 30X circumferentially. The discharge nozzle 30bx is disposed on the stage when the plasma nozzle 3 is in the set position. The substrate on the upper side is just above the outer peripheral portion. The reactive gas from the interelectrode space 30ax is ejected straight out from the ejection outlet, and is ejected to the outer periphery of the front side of the wafer 90, and a part spreads to the wafer 90. The outer end surface can thereby etch away the film 92 on the outer peripheral portion and the outer end surface of the side surface of the wafer 9. Since the discharge port 30bx is formed in a ring shape and covers the entire circumference of the outer periphery of the wafer 90, the reactive gas can be sprayed at one time. It can be effectively etched to the entire circumference of the outer circumference of the φ wafer 90. Further, depending on the type of the film on the side surface and the back surface of the wafer 90, the processing gas components for the upper and lower plasma nozzles 3, 3, and 3 may be different. The discharge port 30bx is disposed at the center in the width direction of the suction port 30cx. The suction port 3〇cx is disposed on the inner peripheral side and the outer peripheral side of the discharge port 30bx, and the suction path 30dx is from the suction port portion and the outer peripheral side of the inner peripheral side. The suction port is partially extended It is connected to the suction and exhaust device not shown in the figure. The arrangement of the plasma nozzle 3〇 of the substrate peripheral processing device of Fig. 27 and the laser irradiation unit 22 of the laser φ heater 20 is shown in Fig. 1. That is, the plasma spray head 30 in the apparatus of Fig. 27 is fixed to the bottom plate 51 of the frame 50 directly toward the end surface and toward the discharge port 30b. The discharge port 30b is disposed close to the crystal disposed on the stage 10. On the lower side of the outer circumference of the circle 90, a reactive gas is sprayed in a direction orthogonal to the outer peripheral portion of the back surface of the wafer 90 (disposed on the line orthogonal to the extended surface of the support surface 10a by the processed position P). As shown in an enlarged view of Fig. 28, a plate-shaped total reflection member 25 is provided at a portion closer to the side of the stage 1 than the discharge port 3b of the end surface of the plasma discharge head 30. On the side opposite to the side of the stage 10 of the total reflection member 25, a slope which is inclined toward the side of the stage 1 103065.doc - 68-1284350 is formed upward. The inclined surface is a total reflection surface 25a of the total reflection laser or the like, and the laser irradiation unit 22 is separated from the radial direction of the plasma discharge head 30 by: /, and the laser projection direction is directed to the inner side in the radial direction. A transverse axis is formed to be secured to the peripheral wall 52 of the frame 50. The laser light L irradiated from the laser irradiation unit 22 is irradiated onto the reflecting surface ～, is reflected obliquely upward, and is irradiated onto the outer periphery of the wafer 9 〇 moon surface. Thereby, the outer peripheral portion of the back surface of the wafer 90 can be locally heated. Further, the member 34 of the upper end portion of the plasma head 30 or the like may be formed of a light transmissive material by means of the laser beam L. The laser from the field shot & shot sheet 70 22 is not linear, but when it is toward the reflective surface ~ the converging cone shape, the electro-convergence head 3G can be lowered and left from the wafer 90, and part of the total reflection is increased. The member 25 is thick to prevent the laser from interfering with the plasma spray head 30. As shown in Fig. 27, at the upper end portion of the peripheral wall 52 of the frame 5, a cover member 8 is formed which is formed along the inner circumference and the entire circumference thereof. The cover member 8 is formed in a horizontal circular plate shape. The horizontal portion 周 of the peripheral wall 52 extending inward in the radial direction; and the cylindrical lower portion 82 which is suspended from the entire circumference of the inner end edge of the horizontal portion 81; and the cross section is formed in an L shape. The cover member 8A can be largely separated from the retracted position above the peripheral wall 52 (the state is not shown) by the elevating mechanism (not shown), and the outer peripheral surface of the horizontal portion 81 abuts against the inner peripheral surface of the peripheral wall 52. The position (this state is shown in Figure 27) is raised and lowered. When the wafer 9 is placed on the stage H) or taken out, the covering member 80 is placed at the retracted position, and when the wafer 9 is processed, the covering member 80 is placed at the set position. 103065.doc -69 - 1284350 In the δ position, the inner edge and the lower portion 82 of the horizontal portion 81 of the covering member 80 are disposed at the processed position ρ, that is, the wafer 9 disposed on the stage 1 The outer peripheral portion is above and covers the upper portion of the annular space 5〇a together with the outer peripheral portion of the wafer 90. A space 50b integrally connected to the annular space 50a is formed between the covering member 80 and the peripheral wall 52. The lower end portion of the lower portion 82 is disposed slightly above the wafer 9A, and the gap 82a (Fig. 28) between the lower portion 82 and the wafer 90 is extremely narrow. As a result, the reactive gas injected to the outer peripheral portion of the wafer 90 can be surely closed into the spaces 50a, 5b, and can be prevented from flowing to the central portion of the upper surface of the wafer 9. Further, the film 92 on the upper surface can be prevented from being damaged. The space 50b between the covering member 8A and the peripheral wall 52 is connected to a suction and exhaust device not shown in the drawing via a suction connector 55 or the like of the covering member 80. Thereby, the space 5 〇 a can be sucked, and the process in the space 50b completes the gas and is exhausted. The suction connector 55 and the suction and exhaust device constitute a "suction mechanism of the annular space". The substrate peripheral processing apparatus shown in Fig. 29, wherein the reactive gas supply source of the reactive gas supply unit uses an ozonator 70 instead of the above-described conventional atmospheric pressure glow discharge type plasma discharge head 3 Hey, 3 years old. Ozonizer 7〇 Ozone generation methods are not limited, such as silent discharge and creeping discharge. The ozonator 70 is provided to be separated from the frame 50. The ozone supply pipe 71 extends from the ozonization state 70, and the ozone supply pipe 71 is connected to the peripheral wall of the frame 50 via a supply connector 72 provided on the bottom plate 5 of the outer side of the radial direction of the laser irradiation unit 22 of the frame 50. 52 reactive gas path 52b. Further, the supply connection person 72 is disposed in the same circumferential direction as the laser irradiation unit 22, and is disposed at equal intervals in the circumferential direction with the laser irradiation unit 22 103065.doc -70-!28435〇 The same number (for example, five) 'the ozone supply pipe 71 is branched and connected to each 72. The reactive gas path 52b extends from each supply connection. - The reactive gas path 52b reaches the inner circumference of the peripheral wall 52. The surface-transparent clearing nozzle 36 protrudes obliquely upward from here, and is sprayed close; the end portion of the nozzle 36 is connected to the protruding outer peripheral portion of the wafer 90 which is placed on the carrier. And 71, the supply connector 72 and the counter nozzle 36 respectively become "reactions"

It has components of the ozone generator 70, the frame 50 for the ozone supply pipe path 52b, and the discharge gas supply mechanism. The ozone which is generated as a reactive gas by the ozonizer 70 is sequentially ejected from the discharge nozzle 36 through the odorant 71, the supply connection 11 72 and the reactive gas path 52b. Since the discharge nozzle is disposed very close to the outer peripheral portion of the back surface of the wafer, it is possible to surely eject the film 92e to the outer peripheral portion of the back surface of the wafer 90 without diffusion and passivation of ozone, and even if the nozzle 36 is ejected. In contrast to the optical path of the laser beam L from the laser heater 2, the laser beam L can be surely heated by the discharge nozzle 36' to the portion of the wafer to be processed, as shown in Fig. 6 (4). In addition, the ozone that has been processed is passed through the suction mechanism, that is, the suction path 53d near the ejection nozzle 36, the iron-discharging path of the suction connector 57, or the gap between the space 5〇a, the 逑 Palace seal 6〇, and the suction path I. The exhaust path of 51c or the like is sucked by the suction and exhaust device not shown in the drawing, and is the same as those of Figs. 1 and 24 . A cover member 8 is provided above the upper peripheral wall 53. Similarly to FIG. 27, the covering member 8A can be moved back upward (indicated by a hypothetical line in FIG. 29) and the set position by an unapplied lifting mechanism (in the figure, 103065. Doc -71 - 1284350 The line indicates) between the lifts. The cover member 8 at the position is abutted on the upper surface of the upper peripheral wall 53 and extends inward in the radial direction, and the lower portion 82 of the inner end portion is located above the outer periphery of the stage 10. Thereby, the covering member 8〇 individually covers the annular space 50a here. Thereby, similarly to the case of Fig. 27, the ozone which has been processed is prevented from flowing to the center portion side of the upper surface of the wafer 90. The radiant heater of the substrate peripheral processing apparatus shown in Fig. 30 uses an infrared heater 120 instead of the laser heater 2 of the above embodiment. φ As shown in FIG. 30 and FIG. 31, the infrared heater 120 includes a light source including an infrared lamp 121 such as a halogen lamp, and an optical system 122 as an irradiation unit for bundling irradiation, and is formed over the entire circumference of the frame 50. ring. That is, the infrared lamp 121 is an annular light source that covers the entire circumference of the frame 5 in the circumferential direction, and the optical system 122 is also disposed to cover the entire circumference of the cover frame 50 in the circumferential direction. The optical system 122 is composed of a concentrating system such as a parabolic mirror, a convex lens, and a cylindrical lens, and a wavelength extraction unit such as a band pass filter, and is further inserted into a focus adjustment mechanism. The optical system 122 passes the infrared rays from the infrared lamp 121 through a bandpass filter, and condenses them by a concentrating system such as a parabolic mirror and a lens, and concentrates on the entire circumference of the back surface of the wafer 90. Thereby, the film 92c of the outer peripheral portion of the back surface can be heated locally and once a week. The infrared lamp 121 can also use a far-infrared lamp or a near-infrared lamp. The emission wavelength is, for example, 76 〇 nm to 10000 nm, and light having an absorption wavelength corresponding to the film 92c is extracted therefrom by a band pass filter. Thereby, the heating efficiency of the film 92c can be further improved. Inside the infrared heater 12A, a lamp cooling path 125 is formed over the entire circumference, and the lamp cooling path 125 is connected to the unillustrated refrigerant supply source via the refrigerant to the path 126 and the return path 127 to circulate. Cold 103065.doc -72-1284350 media. Thereby, the infrared heater 120 can be cooled. If the refrigerant is used, water, air, helium, etc. When air and water are used, they can also be discharged from the return path 127 without returning to the refrigerant supply source. The refrigerant supply source for cooling the heater may be shared with the refrigerant supply source for heat absorption of the substrate. And V is the path 125, month, J to the road control 126, the return path 埶 The cooling refrigerant supply source constitutes the "radiation heater cooling mechanism". The reactive gas supply source of the reactive gas supply means is the same as the apparatus of Fig. 29, and the ozonator 70 is used. The ozonator 7 is connected to a plurality of supply connectors 72 of the frame 50 via an ozone supply pipe 71. There are a large number of supply connectors, such as eight. These supply connectors 72 are disposed at equal intervals in the circumferential direction of the upper peripheral portion of the outer peripheral surface of the peripheral wall 52. The upper side of the peripheral wall 52 is provided as a discharge path and a discharge port forming member. In other words, the reactive gas path 73 connected to the supply connector 在 at the upper side portion of the peripheral wall 52 is horizontally oriented inward in the radial direction and covers the entire circumference in the circumferential direction to form a ring shape. The reactive gas path 73 is opened on the entire circumference of the inner circumference of the peripheral wall 52: it forms an annular discharge port 7 [the discharge port is located at a lower height than the back surface of the wafer 9 which is disposed above the carrier port and must be disposed thereon And, the outer circumference of the circle - is 90, and is arranged to surround the entire circumference thereof. From the ozone W, the ozone-reactive gas path connector 72 is connected to the position, and is diffused to the closed port. The port is in the circumferential direction of the portability of the reactive milk path 73. The sub-outlet 74 is ejected on the inner side in the circumferential direction. Thereby, the film 92c can be irradiated to the entire circumference of the outer peripheral portion of the back surface of the wafer 90. In addition, in the apparatus of FIG. 30, as described above, the wafer 103065 can be processed at one time. 1284350 90 is full circumference, so the stage 10 does not need to be rotated, but in order to make the treatment uniform in the circumferential direction, it is still preferable to rotate it. The device of Fig. 30 covers the upper surface of the peripheral wall 52 when the covering member 80 is in the set position. A suction path 53d is formed over the entire circumference. The suction path 53d is connected to an unexposed suction and exhaust device on the drawing via a suction connector 57 provided in the cover member 80, whereby the periphery of the periphery of the wafer 9 can be used. The suction process completes the reactive gas and is exhausted. φ The inventor uses the same device as that of Fig. 30 to make the outer edge of the wafer protrude from the stage 10 by 3 mm, and the water temperature in the refrigerant chamber 41 is 2 (Γ( At the time of 5 〇, the wafer surface temperature is measured from the distance in the radial direction from the heated portion of the outer edge of the wafer. The output conditions of the infrared heater 12 are as follows.

Optical system for bundling: parabolic mirror illuminating wavelength: 800~2000 nm • Output: 200 W Width of local heating part: 2 mm The result is shown in Figure 32. The water temperature is 2 常 of normal temperature. In the case of 〇, at the vicinity of the heated portion of the outer edge of the wafer, the heat transfer from the heated portion reaches 8 〇 ° C (the heated portion is 4 〇〇. (: above), and since then, it is more than $ mm The portion on the inner side in the radial direction is kept at a low temperature of 5 or less, and it is confirmed that the damage of the film can be suppressed. As shown in Fig. 33, the life of the oxygen atom radical obtained by the decomposition of ozone depends on the degree of brewing, and is very close at 25 ° C. Long, but a reduction of 103065.doc 74-1284350 at 50 °C. In addition, in order to ensure the reaction with the membrane 92c, the temperature of the ozone ejection path rises. ', ', this can

: 'The peripheral processing means of the substrate shown in Fig. 34 is provided with a discharge path (front) mechanism. The peripheral wall 52 (four) of the frame 5 as the W path forming member is provided with a reactive gas cooling path 彳m. The reactive gas cooling path 13 is connected to the path ΐ3ι and the return path 132 via the refrigerant, and is connected to the refrigerant shown in FIG. Supply source to recycle refrigerant. Refrigerant Use water, air and helium. When air or water is used, it can be discharged from the return path #m without returning to the above refrigerant supply source. The refrigerant supply for cooling the discharge path may be shared with the refrigerant supply source for heat absorption of the substrate. Thereby, the ozone in the reactive gas path 52b can be cooled, and the decrease in the amount of oxygen atom radicals can be suppressed, and the activity can be maintained. Further, the removal treatment efficiency of the film 92c can be improved. The reactive gas supply source of the substrate peripheral processing apparatus of Fig. 34 is the same as that of Fig. 29 and the like. The ozonator is used, but reactive gas cooling may be provided in the apparatus using the electropolymer/head 30 of Fig. 24. Path 13 is used to cool the reactive gas path 52b. Above the center of the wafer 9 which is further provided on the stage 10, the inert gas nozzle N is provided as an inert gas ejecting member with the discharge port facing downward. The upstream end of the inert gas nozzle N is connected to an inert gas supply source not shown. An inert gas such as nitrogen gas is introduced into the inert gas nozzle N' from the inert gas supply source to be ejected from the discharge port. The discharged nitrogen gas radially spreads from the center toward the outer side in the radial direction along the upper surface of the crystal circle 90. Nitrogen gas then reaches the gap between the periphery of the wafer 90 and the cover member 8 103 103065.doc -75· 1284350 82a ' part of which spreads to the back side of the wafer 9〇. By the flow of the nitrogen gas, the treatment of the peripheral side of the outer peripheral portion of the wafer 90 can be prevented from proceeding to the front side of the substrate, and the leakage from the gap 8 2 a to the outside can be surely prevented. Further, when the wafer 90 is placed on the stage 10 or the wafer 9 is taken out, the inert gas nozzle N is retracted to avoid interference. The radiant heater of the substrate peripheral processing apparatus of Fig. 34 uses laser heating = 20 '. However, as shown in Fig. 35, an infrared heater = 〇 can also be used. In addition, the infrared heater 12 〇 Similarly to Fig. 3, the ring shape is formed to cover the entire circumference of the frame 5. The substrate outer peripheral processing device shown in Fig. 36 is provided from the ozonator (10) supply connector 72 in the bottom plate of the frame 5 51 laser irradiation single (10) Ϊ = Γ 60. The supply connector 72 is connected as a discharge path only 幵> into a tubular member of the tube 啧屮喰 簦 72 簦 贺 贺 75 75 75 75 75 75 75 75 75 75 75 It extends upwards and bears against the bottom of the side of the stage 1 and bends, and continues to extend obliquely above the inclined portion of the Pagoda. The end opening of the squirting squirting 75 becomes the second side of the circumferential side of the stage 10. The exit is close to the periphery of the wafer of the carrier, and ozone is ejected toward the film 92c. The α-Hui structure heat-cools the wafer 90 inside the stage 1 , and the medium to 41 passes through the refrigerant, and the de-suction mechanism doubles the outlet I / the exit nozzle 75. Thereby, the substrate is endothermic, and the reactive gas cooling path in the path-controlled cooling (tempering) mechanism is formed. Fig. 34 In addition, it is preferable to reduce the cost at m. . The circumferential side of the crucible or the outer surface of the spout 75 is applied. 103065.doc -76 - 1284350 Reduce the frictional material such as the grease caused by the load on the stage. The substrate peripheral processing apparatus shown in Fig. 37 has a step 12 formed on the outer circumference of the upper surface of the stage 1G. When the wafer 9 is set by this, a concave portion (a gas stagnation portion) is formed between the step 12 and the outer circumference of the wafer. The concave portion ua covers the entire circumference of the carrier (4) and opens to the outside in the radial direction. The radiance in the radial direction is about 3 to 5 mm. The ozone ejected from the ejection nozzle 36 enters the concave portion, that is, the gas retention portion φ(1), and is temporarily retained. Thereby, the outer peripheral portion of the back surface of the ozone and the wafer % can be sufficiently ensured. The reaction time of the film 92c can improve the processing efficiency. The substrate outer peripheral processing device shown in Fig. 38 is provided with a fence En on the outer side in the radial direction of the outer peripheral portion of the stage 1 . The inner peripheral side wall is formed with a substrate insertion hole 10a. The protruding outer peripheral portion of the wafer 9A provided on the stage 1 is inserted into the inside of the fence En through the substrate insertion hole 1〇a. The outer peripheral side wall of the En is inserted through the end portion of the plasma jet nozzle 3, whereby the discharge port of the reactive gas is disposed inside the fence. In addition, the radiation heating unit such as the laser irradiation unit of the laser heater 20 22 leaves the lower side of the enclosure En, that is, is disposed outside the enclosure En. En is made of a light-transmitting material such as quartz, borosilicate glass or a transparent resin. Thereby, the laser light L from the laser irradiation unit 22 is partially irradiated to the outer periphery of the back surface of the wafer 9 through the bottom plate of the fence En. In this way, the outer peripheral portion of the back surface of the wafer 90 can be locally radiated, and the reactive gas such as oxygen radicals and ozone generated in the plasma discharge head 3 is ejected into the inner periphery of the fence En, and is ejected. To the above-mentioned local heating portion, the film 92c at the place can be surely removed. The treatment completion of the reactive gas is prevented from leaking out to the outer portion 103065.doc -77-1284350 by the fence En. Then, the suction port of the plasma nozzle 30 is removed. In addition, at least the bottom plate of the fence En opposite to the laser irradiation unit 22 may be made of a light transmissive material. Fig. 39 is a view showing another aspect of the optical system of the radiant heater. The optical fiber cable 23 (waveguide) is optically connected to the light source 21 as an optical system for transmitting the emitted light to the outer peripheral portion of the wafer 90. The optical fiber cable 23 is composed of a bundle of a plurality of optical fibers. The light source 21 φ extends, And in a plurality of directions, the plurality of diverging cables 23a are formed. The diverging cables 23a may be composed of a bundle of optical fibers or a bundle of a plurality of optical fibers. The end portions of the divergent cables 23a are directed to the outer periphery of the carrier 1 The extensions are arranged at equal intervals apart from each other along the circumferential direction of the stage 1. The end portions of the respective branch gauges 23a are at the position to be processed p, that is, the vicinity of the outer peripheral portion of the back surface of the wafer 90 provided on the stage. The plasma head 30 is disposed laterally opposite to the wafer 9A and disposed vertically opposite to the end portion of the eccentric mirror 23a. It is preferable to provide a lightning ray at the end portion of each of the branch cables 23a. The irradiation unit 22 is omitted from the drawing. The laser light from the light source 21 is transmitted by the optical fiber cable 23, and is not scattered to the outer peripheral portion of the back surface of the wafer 90. And the distribution is distributed to different positions in the circumferential direction by the branch cables 23 & Then, it is emitted from the end of each branch cable Ma. Thereby, laser irradiation can be performed from the vicinity of the outer peripheral portion of the back surface of the wafer 9A. Further, the spotted blade from the point light source 21 can be irradiated to a plurality of positions in the circumferential direction of the wafer 9. Thereby, the film can be removed by heating the plurality of positions at the same time. Furthermore, the arrangement place of the light source 21 can be freely set. The wiring of the fiber is also easy to 103065.doc -78-1284350. Further, an optical member for bundling such as a cylindrical lens may be provided at the end of the branch cable 23a to bundle the emitted light. A plurality of light sources 2A may be provided, and the respective fiber optic switches 23 of the respective light sources 21 extend to a predetermined circumferential position. The end portion of the optical fiber is tilted to the end portion of the aa round 90, and the discharge port of the electric nozzle 3 is disposed directly below, and the arrangement relationship between the end portion of the optical fiber and the discharge port can be variously arranged. Of course, in addition to the plasma spray head 30, an ozonator 7 can be used. In addition to the φ laser light source 21, an infrared lamp can also be used. Fig. 40 is a view showing a change of the discharge port forming member such as the discharge nozzle % shown in the apparatus of Fig. 24 or the like. As shown in Fig. 40 (a), on the peripheral wall of the discharge nozzle 36X, the swirling guide holes 36b which are formed in a swirl shape as the swirling flow forming portion are formed at equal intervals in the circumferential direction to form a plurality of pieces (e.g., 4). The revolving guide hole 36b extends in the substantially tangential direction of the inner circumference of the nozzle 36, that is, the discharge port 3, and the peripheral wall of the nozzle 36X is penetrated from the outer circumference toward the inner circumference. Further, as shown in Fig. 2(b), the outer peripheral surface of the nozzle 36X is inclined toward the inner peripheral surface (i.e., inward in the radial direction), and is inclined at the end of the nozzle 36X. An end portion of the outer peripheral side end portion of each of the swirling guide holes 36b connected to the inner peripheral side of the discharge path 52b is connected to the discharge port 36a. Therefore, the swirling guide hole grips the path of the communication path between the discharge path 52b and the discharge port 36a and even the path portion on the upstream side of the discharge port. + The discharge nozzle 36X can make the reactive gas uniform by slanting the reactive gas from the discharge path, "the inside of the discharge portion 36a" and swirling along the inner peripheral surface of the discharge port 36a. Further, after the reactive gas passes through the pores of the pores, the orifices 36b are relatively enlarged and ejected to the discharge ports 36 & therefore, 103065.doc -79-1284350 can be further uniformized by pressure loss. The swirling flow of the homogenized reactive gas is forcibly ejected from the nozzle 36X, and is ejected to the outer peripheral portion of the back surface of the wafer 9 to provide a good film removal treatment. The substrate peripheral processing apparatus shown in Figs. 41 and 42 is provided with a processing head 100 on the side of the stage 1A. The substrate peripheral processing apparatus mainly removes the film that has spread to the back surface of the outer peripheral portion of the wafer 90, and the processing head 1 is disposed below the upper surface of the stage 10. When the film on the outer side of the outer peripheral portion of the wafer 9 is mainly removed, the processing head 100 can be vertically inverted and placed on the upper side of the carrier 1 . The processing head 100 is provided with a discharge nozzle 75 and a suction exhaust nozzle 76. The ozone supply pipe 71 extends from the ozonator 7 as a reactive gas supply source, and the ozone supply pipe 7 is connected to the base end portion of the discharge nozzle 75 via the connector 处理 of the processing head 1〇〇. The discharge nozzle 75 is disposed below the processing position (the outer peripheral portion of the wafer 90 on the stage 10). The ejection nozzle is the ejection axis L75 at the end portion, as viewed from the plane (Fig. 41), substantially along the outer circumference β of the wafer 9, the circumferential direction (tangential direction) and toward the side of the stage i 即9〇=The inside of the radial direction is slightly inclined, and is viewed from the front (Fig. 42), and is inclined upward toward the crystal. Then, the discharge nozzle is at the end of the discharge port near the processing position P (the back surface of the outer peripheral portion of the wafer 90). (4) At least the end portion may be made of translucent Teflon (login =). , (registered trademark) broken glass and quartz glass and other light-transmitting materials, and the discharge side of the processing head is connected to the exhaust nozzle 76 (4) 77. The side of the display is connected to the suction port 々 ° °. The exhaust pipe 78 extends from the connector 77, and the ^78 is connected to the exhaust gas _79 including the exhaust gas (four). 103065.doc -80 - 1284350 The suction/discharge nozzle 76 is disposed on the lower side of the outer peripheral portion of the wafer 9 被 on the processing position p (stage Η). The suction axis L76 of the end portion of the suction nozzle 76 is viewed from the plane (Fig. 41), and the molybdenum is turned toward the tangential direction of the outer periphery of the wafer 9 ,, and viewed from the front (Fig. 42), toward the wafer 9. 〇 舎 舎 日 日 日 日 日 。 。 。 。 。 。 。 The suction port at the end of the suction nozzle 76 is located at the same height as the discharge port of the tray 75, which is just below the back surface of the wafer 90. As shown in Fig. 41, the end portions of the discharge nozzles 75 and the exhaust nozzles 76 are viewed from the plane along the outer circumference of the wafer 9 (the assumed annular surface C on the outer side in the radial direction of the upper surface of the stage 1). The circumferential direction (tangential direction) is arranged to face each other with the processed position p interposed therebetween. The processed position p is disposed between the discharge port ' at the end of the discharge nozzle 75 and the suction port at the end of the discharge nozzle 76. The discharge nozzle 75/0 is placed on the stage 1 and the direction of rotation of the wafer 9 (in the clockwise direction as viewed in the plane) is disposed on the upstream side, and the suction and discharge nozzle 76 is disposed on the downstream side. The distance between the discharge port of the discharge nozzle 75 and the suction port of the suction nozzle 76 is considered in consideration of the reaction temperature of the film 92c to be removed, the number of revolutions of the stage 10, and the heating capability of the laser heater 20. Appropriate settings within the range of a few mm to several tens. When the photoresist is removed, the interval between the discharge port of the discharge nozzle 75 and the suction port of the suction/exhaust nozzle 76 must be set to a range in which the temperature of the processing portion of the wafer is 150 ° C or more, as long as it is required to be in the range of 5 mm to 40 mm. . The suction port diameter of the exhaust nozzle 76 is larger than the discharge port diameter of the discharge nozzle 75, and is about 2 to 5 times larger. For example, the outlet diameter is about 1 to 3 mm, and the suction diameter is about 2 to 15 mm. As shown in Fig. 42, on the lower side of the processing head 1 ,, a laser irradiation unit 22 as a laser heater 20 for radiating a 103065.doc -81 - 1284350 heater is provided. The laser irradiation unit 22 is disposed on the lower side of the nozzles 75, 76, and is disposed between the discharge nozzles 75 and the end portions of the exhaust nozzles 76 as viewed from the plane as shown in Fig. 41. The processed position P is located directly above the laser irradiation unit 22. In the above configuration, the laser light from the laser light source 21 is irradiated to the upper side from the laser irradiation unit 22 via the optical fiber cable 23. Thereby, the back surface of the outer peripheral portion of the circle 90 is locally heated. The portion of the local heating is then temporarily maintained high and moved to the downstream side in the rotational direction by the rotation of the stage 10. Therefore, in the outer peripheral portion of the wafer 90, in addition to the irradiated minute I (the processed position P) directly above the laser irradiation unit 22, a higher temperature is formed than in the portion on the downstream side in the rotational direction. Of course, the irradiated portion P directly above the laser irradiation unit 22 is at the highest temperature, and the temperature is lowered 2 from the downstream side in the rotational direction. The distribution curve τ represented by the two-dot chain line in Fig. 41 indicates the temperature distribution of the wafer %, with the irradiated portion P as the center, and the distribution of the high temperature region toward the downstream side of the square turn direction (for the radiant heating effect, It will also be described in the following description of the embodiment 43 to 46. At the same time, the field heating and the rotation of the stage are simultaneously performed, and the odor of the ozonizer 7 is sequentially passed through the supply pipe 71, the connector 72, and the discharge nozzle 75, and is ejected from the discharge squirt along the discharge axis L75. . The ozone is sprayed onto the wafer • + β σ卩 around the illuminated portion (processed position P). Since the angle is formed upward, the ozone gas can be ejected and produced. The L75 is formed on the inner side of the +-direction to form an angle. The twenty-six oxygen system is ejected toward the inner side of the wafer 90. Thereby, ozone can be prevented from spreading from the outer end surface of the wafer 90 to the front side, and the film 92 of the 103065.doc -82-1284350 and the front side can be prevented from being damaged. After the ozone gas is ejected onto the back surface of the wafer 9 (), it is not left from the back surface of the wafer 90, and the line is cut along the outer circumference of the wafer %, and the line flows toward the exhaust nozzle 76 side. Thereby, the reaction time of ozone with the film 92c on the back surface of the wafer 90 can be ensured for a very long time. The ozone gas flows along the deviation direction of the temperature distribution of the wafer 9〇. Therefore, the portion p to be irradiated after the ejection is of course also caused to react with the film 92c at a portion on the side of the exhaust nozzle 76 downstream of the portion to be irradiated p. This can improve processing efficiency. At the same time, the attraction mechanism 79 is driven. Thereby, the ozone gas and the reaction by-products which have been processed are not diffused, and can be guided to the suction port of the exhaust nozzle 76 to suck the exhaust gas. Since the suction port is larger than the discharge port, the ozone gas or the like which has been subjected to the suction treatment can be surely captured, and the diffusion of the ozone gas or the like can be surely suppressed. Further, it is possible to surely prevent ozone gas or the like from spreading to the wafer side surface side, and it is possible to surely prevent the flaws 92 on the front side from being damaged by characteristics and the like. In addition, the object can be quickly removed from the periphery of the processed portion of the wafer 9G. As shown by the arrow curve in Fig. 4!, the rotation direction of the carrier (4) is directed to the positive direction from the ejection nozzle 75 to the suction nozzle 76 (the deformation of Figs. 3 and 44 along the flow of ozone gas shows the deformation of Figs. 41 and 42).处理 处理 基材 基材 基材 基材 基材 基材 基材 基材 基材 基材 基材 基材 基材 基材 基材 基材 基材 基材 基材 基材 基材 基材 基材 基材 基材 基材 基材 基材 基材 基材 基材 基材 基材 基材 基材 基材 基材 基材 基材 基材 基材 基材 基材 基材 基材 基材 基材 基材 基材 基材 基材In the cooling path 130, the medium is cooled by water or the like. Thereby, the nozzle retaining member 75H can be cooled and the nozzle mouth can be cooled. The plane of the laser irradiation unit 22 is injured. The position of the W gauge is disposed in the middle end of each of the discharge nozzles 75 and the suction nozzles 76. The arrangement is disposed on the side opposite to the discharge nozzle 75. The discharge nozzles 75 and the suction exhaust ports F are provided. The processing head 100 is detachable, whereby it can be changed to an optimum shape as needed. When the ozone is supplied, the cooling path 13 of the nozzle holding member 75H passes through the cold portion medium. The nozzle holding member is configured to cool the discharge nozzle 75 Further, it is possible to cool the ozone gas passing through the inside of the discharge nozzle, thereby avoiding the reduction in the number of oxygen atom radicals and maintaining high activity. Further, it can be reliably etched by reacting with the film 92c. The heater 2 is emitted, and the laser light L is emitted directly upward from the single shot 22. As shown in the bottom view of Fig. 45 (8), the field light is spot-shaped on the very small area Rs of the back surface of the wafer 9. The area Rs is located. Between the discharge port of the discharge nozzle 75 and the suction port of the suction nozzle 76, the Lu is exactly the channel for irradiating the ozone gas, and the local light radiation heats the region Rs to instantaneously reach a high temperature of several hundred degrees. The ozone is contacted by the high temperature. The region Rs can promote the reaction, and can improve the processing efficiency. & The rotation of the wafer 10 and the wafer 90, the local radiant heating region RS is sequentially transferred. That is, the dots on the outer periphery of the wafer 9 are in a certain The moment is located in the radiant heating area Rs ' and immediately passes through it. Therefore, the radiant heating period is instantaneous. For example, the diameter of the wafer 9 is 2 〇〇, the rotation speed is 1 rpm, and the Koda field is Rs. When the diameter is 3 mm, the radiant heating period is only about 〇. 3 seconds. 103065.doc -84 - 1284350 In addition, the I e of the outer circumference of the wafer 90, ^ is called the heart point, once heated, after passing through the radiation area Rs The heat is temporarily retained to form a high temperature (refer to the surface temperature distribution map of Fig. 。). During the high temperature period, it is still located in the ozone gas passage between the discharge nozzle and the suction nozzle, and the ozone pulls the mesh. Thereby, the processing efficiency can be further improved.

Moreover, since the radiation region is biased toward the side of the ejection nozzle 75, when the wafer is sprayed with ozone at various points on the outer circumferential side, the radiation is immediately radiated and heated, and then the point is temporarily maintained at a high temperature even if it is separated from the radiation region RS, and at a high temperature thereof. During the period, continuous contact with ozone. This can further improve the processing efficiency. Further, except for the portion of the outer peripheral portion of the wafer 9G which is outside the inner portion, the radiant heat from the laser heater 20 is not directly received, and the cooling medium in the stage 1 is also used to absorb heat and cool. Therefore, even if the heat of the radiant heating region is transmitted, the temperature rise can be suppressed, and the low temperature state is surely maintained. Thereby, it is possible to prevent the film 92 from being removed and to maintain a good film quality. FIG. 46(4) shows a crystal at a certain moment when the outer peripheral portion of the back surface of the wafer is rotated by laser. The temperature distribution on the side of the round table, and the diagram (8) shows the result of measuring the temperature of the position in the circumferential direction of the back surface. The laser output is 100 W ' revolutions in i rpm. The diameter of the radiation region Rs is about 3 匪. The position of the outer circumference of the wafer 90 of the = (4) 〇 and the origin of the horizontal axis of the figure (b) = :. The horizontal axis of the figure (b) is the point on the back side of the wafer, the point on the periphery of the wafer, from the position 〇. The radiation area and the area containing it in the two figures form a corresponding relationship. The region R 〇 corresponds to a portion D (see Fig. 45 (b)) between the discharge nozzle and the suction nozzle. From Fig. 46(b), it is understood that the portion before entering the radiation region Rs is only a very small range 'but is formed by heat conduction from the radiation region RS to 15 or more. When entering the radiation area RS, it suddenly rises to form a temperature distribution of 350 ° C to 790 ° C. The temperature is lowered after passing through the radiation region Rs, but is still at a temperature of 150 ° C or more and the temperature at which the organic matter can be removed is maintained. In this way, it is found that the combination of rotation and light-fire heating can effectively remove organic matter. The range of high temperatures after passing through the radiant area RS depends on the laser output ^ and the number of revolutions of the stage. The gap between the discharge nozzle and the suction nozzle (the width of the above region R0) can be set in accordance with this. In order to reduce the temperature of the radiation region Rs, it can be correspondingly reduced by reducing the laser output or increasing the number of revolutions of the stage. Conversely, in order to increase the temperature, it can be matched by increasing the laser output or reducing the number of revolutions of the stage. The processing head 1() of the substrate peripheral processing apparatus shown in Figs. 47 and 48 is disposed on the upper side of the wafer 90 on the stage 10. The discharge nozzle 75 and the exhaust nozzle % are also disposed on the upper side of the wafer 90. Similarly, in the same manner as in FIG. 41 to FIG. 41, the nozzles 75 are in a plane direction along the substantially circumferential direction of the wafer 9 (the tangential direction near the processing position P), and are opposed to each other with the processed position p interposed therebetween. Mode configuration. The irradiation unit 22 of the laser heater 20 is disposed just in the up direction of the processed position p. The laser beam axis of the illumination unit 22 passes through the processed position p, along a vertical line orthogonal to the wafer 90, and is in focus at the processed position p. The laser light from the irradiation unit 22 is irradiated onto the processed position P on the side surface of the outer peripheral portion of the wafer 9 while the radiation is heated to be processed. The film on the side of the watch. At the same time, the ozone from the ozonation 1170 is ejected from the ejection nozzle 75 to the side of the 103065.doc -86-1284350 surface of the outer circumference of the Japanese yen, and flows substantially along the tangential direction of the wafer 9 near the processing position p. . Thereby, the film which is unnecessary on the outer peripheral side of the wafer 90 can be removed. The gas flow on the wafer 90 is along the direction in which the wafer 9 is rotated, and also in the direction in which the high temperature region of the residual heat is formed (Fig. 46 (a)). This can improve the efficiency of the process. The gas (including the reaction by-products including fine particles) which has been processed is subjected to the rotation of the suction nozzle 76 and interacts with the rotation of the wafer 9 to substantially maintain the flow direction at the time of the discharge, and is sucked into the suction nozzle 76 to be exhausted. . Thereby, it is possible to prevent the accumulation of fine particles on the outer circumference of the wafer 90. Since the diameter of the suction nozzle is larger than that of the discharge nozzle 75, leakage of the process completion gas can be suppressed. Fig. 49 is a view showing a modification of the arrangement structure of the suction nozzles. The suction nozzle 76 is disposed from the outside of the wafer 1 to the outside of the radius of the wafer 90, and is disposed on the inner side of the substantially radius of the wafer 90 so as to be substantially orthogonal to the discharge nozzle. The position of the suction port at the end of the suction nozzle 76 is slightly smaller than the discharge port at the end of the discharge nozzle 75, in the direction in which the wafer 90 rotates. The position of the suction nozzle 76 in the upper and lower directions is placed on the upper surface of the stage 1 to be substantially the same height as the wafer 90. This structure can be ejected from the ejection nozzle 75, and after the reaction, the processed gas (including the reaction by-product such as fine particles) is quickly outputted from the wafer 9 to the outside of the radius, and the suction nozzle 76 sucks the exhaust gas, thereby preventing the On the wafer 9 (4) microparticles. In the suction nozzle structure shown in Fig. 50, the suction nozzle 76 is disposed on the stage 1A so as to face the lower side of the outer peripheral portion of the wafer 90. The suction nozzle % end 103065.doc -87 - 1284350 is disposed at a position closer to the discharge port of the discharge nozzle 75 and slightly away from the positive direction of the wafer 9 rotation. As shown by the arrow in Fig. 51, the gas ejected from the discharge nozzle 76 flows from the upper surface side of the outer peripheral portion of the wafer 90 to the lower surface side along the outer end surface. In this process, the unnecessary film 92 on the outer end surface of the wafer 90 is reacted, and the film 92c on the outer end surface can be surely removed. Then, the processed gas (including reaction by-products such as fine particles) is sucked into the lower suction nozzle 76 to be exhausted.

In the substrate peripheral processing apparatus shown in Figs. 52 and 53, the irradiation unit 22 is disposed obliquely to the outer peripheral portion of the wafer 9 (the processing position P) from the upper side of the wafer 90 and outside the radius. The inclination angle of the irradiation unit 22 is, for example, about 45. . As shown in Fig. 54, the irradiation optical axis L2 (the central axis of the laser beam) of the irradiation unit 22 intersects with the upper inclined portion of the outer peripheral portion of the wafer 90, which is substantially coincident with the normal to the film surface of the intersection. Or just in the direction of the thickness of the film at the intersection. The irradiation unit 22 is provided with a focusing optical system including a convex lens, a cylindrical lens, and the like, and the laser beam L sent from the light source 21 to the optical fiber 23 can be inclined toward the upper side of the outer circumference of the circle 90 and the optical axis. At the intersection of 2〇 (irradiated point), the beam is irradiated. The above structure is as shown in Fig. 54, and the laser light from the irradiation unit 22 is larger than the outer peripheral portion of the wafer 90 and is half-backward to the outer periphery of the wafer 90 at a lower side of about 45. The angle is shot and bundled. Then, it is irradiated onto the upper side inclined portion of the wafer 9 〇 ° I5. The laser optical axis L2 (4) is substantially orthogonal to the illuminated point, and the incident angle is about 0 degrees. Thereby, the heating efficiency can be improved, and the outer peripheral portion of the wafer 9Q around the exposure point can be locally and surely heated. By bringing the ozone from the nozzle 75 into contact with the locally heated portion, the film 92c can be effectively removed as shown by 103065.doc -88-1284350. The inventors performed the laser self-obliquely upper 45 as shown in FIG. The angle is partially focused on the experiment of irradiating the outer periphery of the wafer. The number of revolutions of the wafer is 5 (), and the output of the laser is 130 watts. Then, the surface temperature of the vertical outer end surface of the wafer was measured by an infrared camera, and 235 〇 6 ° C was measured directly below the irradiated spot. In addition, the laser irradiation angle is formed vertically to 3 〇. , other conditions and above • 45. The same, measured below the illuminated point is 2〇9.23cc. This proves that a sufficiently large etching rate can be ensured. In addition, the irradiation direction of the field shot is directly above the outer peripheral portion of the wafer, and other wafer rotation numbers and laser output conditions are the same as described above. The temperature of the vertical outer end surface of the wafer is measured as 114.34. . . , lowering the etch rate to increase the temperature. This is because the laser is not directly irradiated to the vertical outer end surface directly from the outer peripheral portion of the wafer (the direction of the wafer 9 〇). Further, as shown in Fig. 54, it was found that the irradiation direction was inclined to 45. At this time, the heating temperature can be increased by about 2 times from φ to 90°. The laser irradiation axis L2 of the irradiation unit 22 only needs to be tilted from the outer side of the radius of the wafer 9 to the outer periphery of the wafer 9〇. The tilting angle of the laser irradiation axis (4), in addition to the tilt, as shown in Fig. 56, can also be dumped to a level. Thus, the laser light from the irradiation unit 22 is perpendicularly irradiated from the outer side of the wafer 9 to the outer end surface of the wafer 90. The angle of incidence generally forms zero degrees. Thereby, the film 92c on the outer end surface of the wafer 90 can be further heated, and the etching rate can be further improved. The inventor tilts the irradiation unit 22 into a horizontal position as shown in Fig. 56, and irradiates the laser beam from the front side of the wafer 103065.doc -89-1284350 to the periphery of the free circle outside the wafer, and other conditions are as shown in Fig. 54 above. The experiment is the same (wafer revolutions: 5 rpm, ♦ 鼾 end

The Pm field output is 130 watts for heating experiments. Then, the surface temperature of the vertical outer end surface of the wafer was measured and found to be 6.36C. As a result, it was found that the end surface perpendicular to the wafer was further irradiated from the front side of the wafer, and it was further separated, and the chamber was formed, and the processing was possible at a higher speed. As shown in Fig. 57, the organic film 92 of the stone ruthenium compound or the like also has a tendency to spread toward the back side (lower side) of the wafer 9 as a peripheral portion. When the film on the back surface of the ridge 92c of the outer peripheral portion of the wafer 90 is to be mainly removed, the illuminating unit 22 may be disposed on the lower side of the wafer 9 且 and the car 々 ix / 丨 丨, 卜 side and outside the diameter And from this position toward the outer periphery of the wafer 90. The laser from the irradiation unit 22 is irradiated from the lower side of the wafer 9 () and the outer side of the radius toward the outer periphery of the wafer 90 obliquely upward. The angle of the optical axis L20 of the laser is about 45. . The laser is incident on the lower side inclined portion of the outer peripheral portion of the wafer 9 at an angle of incidence close to zero. Thereby, the film 92c in the outer peripheral portion of the wafer 90, particularly on the back side, can be heated. The film 92c on the back side can be removed by etching at a high speed. In the back surface treatment, the discharge nozzle Μ and the exhaust nozzle 76 are preferably disposed on the lower side of the outer peripheral portion of the wafer 9 . As shown in Fig. 58, in addition to the irradiation unit 22 in the pouring arrangement, a vertical irradiation unit 22A may be additionally formed on the wafer 90. The vertical illumination unit is connected to the laser light source 2IX different from the tilting illumination unit 22 by the fiber optic cable 23 turns. Two fiber optic cables may be diverged from the same laser source, one is connected to the vertical illumination unit 22χ, and the other one is connected to the tilting illumination unit 22° 103065.doc -90· 1284350, and the two illumination units 22 are provided. In the 22-inch device structure, the film 92c on the outer circumference of the wafer and the outer surface of the wafer 92c can be mainly removed by the high temperature heating of the tilting irradiation unit 22, and the film 92c of the outer peripheral surface of the wafer 9 can be mainly used. The vertical irradiation unit 22 is efficiently removed by heating at a high temperature. Thereby, all unnecessary films 92e on the outer peripheral portion of the wafer 90 can be surely removed.角度 The angle of the irradiation unit 22 is not limited to the fixed one, and as shown in Fig. 59, the angle may also vary. The substrate peripheral processing apparatus shown in Fig. 59 is provided with a moving mechanism 30 for φ shot sheet 7022. A guide 31 is provided in the moving mechanism 30. The guide 31 forms approximately 9 inches between approximately 12 o'clock and approximately 3 o'clock positions. One-fourth of a circle has an arc shape. The outer peripheral portion (processed position p) of the wafer 90 is disposed at a position of the arc center of the guide. The irradiation unit 22 is attached to the guide 31, and can be moved in the circumferential direction of the guide 31. Thereby, the irradiation unit 22 and its laser optical axis L2 are always oriented toward the outer peripheral portion of the wafer 90, and are formed at a position perpendicular to the outer peripheral portion of the wafer 9〇 (the two-point chain line of FIG. 59). The position between the horizontal posture # of the positive side of the wafer 9 (the dotted line in Fig. 59) includes 90. The angle can be adjusted. The movement of the illumination unit 22 and the laser optical axis L20 includes a radius of the stage 1 and the wafer 9 and is disposed on the upper surface of the stage 10 and perpendicular to the wafer 9A. The moving mechanism 30 is provided with a drive mechanism for moving the irradiation unit 22 along the guide rail 31 between the vertical and horizontal posture positions, but the drawings are omitted. When the substrate peripheral processing device to which the moving mechanism 30 is attached is as shown by the solid line in FIG. 59, when the upper side inclined portion of the outer peripheral portion of the wafer 90 is mainly processed, the irradiation unit 22 and the laser optical axis L20 are on the upper side of the wafer 90. Tilt about 45. . Therefore, the 103065.doc -91 - 1284350 heart can surely heat the periphery of the upper upper inclined portion of the wafer without the upper side inclined portion of the wafer 90 as the middle/dish, and the high etching rate can be surely removed. Film 92c. As shown by the dashed line in the figure, when the vertical outer end surface of the wafer 90 is mainly processed, it is known that the image is early and the laser light axis L2G is tilted on the positive side of the wafer % to form a horizontal posture. Thereby, the outer end surface of the wafer 90 is centered, and it is possible to

The high temperature is used to heat the periphery thereof, and the unnecessary film 92c around the outer end surface can be surely removed at a high etching rate. As shown by the two-dot chain line in the figure, when the wafer 9 is mainly processed as the upper side of the circumference, the irradiation unit 22 and the laser (four) are positioned directly above the wafer (10) to form a vertical posture. Thereby, the flat portion on the upper side of the outer circumference of the wafer 9 is centered, and the circumference can be surely heated at a high temperature, and the unnecessary film 92c around the upper flat portion can be surely removed at a high (four) rate. In this way, the parts of the outer periphery of the wafer 9 are efficiently processed. As shown in FIG. 60, in the case where the film on the back side of the outer peripheral portion of the wafer 9 is to be treated with emphasis, the #-track 31 of the moving mechanism 30 can be formed at about 3 o'clock and about 6 o'clock. Hey. The arc of the circumference is 4 points. At this time, the irradiation unit 22 and its laser optical axis L20 are always oriented toward the outer peripheral portion of the wafer crucible (the processed position P), and at the position of the horizontal posture (the dotted line in FIG. 60) forming the positive side of the wafer 9 and forming the crystal The position between the vertical posture directly below the outer circumference of the circle 9 (the two-point chain line of Fig. 60) includes 9 〇. The angle can be adjusted. Thereby, as shown by the solid line in FIG. 60, the lower side of the outer peripheral portion of the wafer 9 is mainly processed, and the tilting unit α and the laser optical axis L2 are disposed on the lower side of the wafer 9〇 as tilted. About 45. . Thereby, the upper portion of the outer peripheral portion of the wafer 90 is 103065.doc - 92-1284350, and the circumference can be surely heated at a high temperature, so that the unnecessary film 92c around the upper inclined portion can be highly etched. In the case of the dashed line of the figure; iv, ", when the vertical outer end surface of the wafer 90 is mainly processed, the irradiation unit 22 is two u, and the field optical axis L20 is dumped on the positive side of the wafer 9". In the horizontal posture, the outer end surface of the outer yuu yu can be surely sorrowed, and the west is heated to the periphery thereof, and the unnecessary film 92c around the outer end surface can be surely removed from the anvil. @ • As shown by the two-point key line in the figure, the planar material on the outer peripheral side of the wafer 90 is mainly processed, and the irradiation unit 22 and the laser optical axis L2 are placed directly under the wafer 9 to form a vertical posture. In this manner, the peripheral portion of the outer peripheral side of the wafer 90 can be heated at a high temperature, and the unnecessary film 92e around the back side flat portion can be surely removed at a high etching rate. Thus, the wafer 9 can be efficiently processed. In each of the outer peripheral portions, in Fig. 59 and Fig. 60, the guide 31 is in the shape of an arc of one-fourth of a circumference, and the range of the adjustable angle of the irradiation unit 22 and the laser optical axis L20 is about 9 〇. Forming the guide rail 31 from about 12 o'clock to about 6 The position of the dot clock includes a semicircular shape of 180. The irradiation unit 22 and the laser optical axis 12 are arranged to be 18 〇 from the directly upper side to the lower side of the outer peripheral portion of the wafer 90. The angle range is adjusted. 61 to 67. The substrate peripheral processing apparatus has the processing head 1 disposed on one side of the stage 1A. As shown in Fig. 67, the processing head 100 can be moved in and out toward the stage 10. The solid line of Fig. 67 is supported by the apparatus frame (not shown) in a state of advancing and retracting from the retracted position (the assumed line of Fig. 67) from the stage 10. 103065.doc -93 - 1284350 The number of the first ones is not limited to one, and may be arranged in the circumferential direction of the stage 1〇. As shown in FIG. 61 to FIG. 64, the processing head 100 has a head body 1〇1 and is disposed on the head body. The shank type nozzle 16 is formed in a substantially cubic shape. As shown in Figs. 16 and 62, an irradiation unit U of a laser heater is provided on the upper side portion of the head body 101. As shown in Figs. 6i to 4 The lower side portion of the head body (8) is formed with an opening 102 facing the φ table 10. The opening 102 The surface faces the illumination window at the lower end of the irradiation unit 22. On the wall of the lower portion of the head body 101, a gas supply path 71 of a purlin path and exhaust paths 76, 76γ, 76z of the three paths are formed. As shown, the base end (upstream end) of the gas supply path 71 is connected to the ozonator 70. As shown in Figs. 62 and 63, the gas supply path has the end (downstream end) of the crucible facing the opening 1 of the head body 101. As shown in FIG. 62 and FIG. 63, the inner side surface of the opening 1〇2 of the head body 1〇丨 opposite to the gas supply path 71, and one exhaust path 76X The suction end is open. The height of the suction end of the exhaust path 76X is set to be slightly higher than the upper surface of the stage 1〇. The exhaust path 76 is disposed on the downstream side of the gas supply path 71 and the shank configuration nozzle 160 along the rotation direction of the wafer 9 (in the clockwise direction as viewed in plan). As shown in Figure 62, another! The suction end of the exhaust path 76γ is opened at the central portion of the bottom surface of the opening 102 of the head body ιοί. The suction end of the exhaust path 76γ is disposed directly below the above-described observation unit 22 and a short tube portion 161 which will be described later. As shown in Fig. 61 and Fig. 64, the remaining suction passage 76 has a suction end opening 103065.doc • 94· 1284350 on the inner side of the bottom side of the opening 102 of the head body 101. The suction end of the exhaust path 76Z is set to have substantially the same height as the upper surface of the stage 10. The downstream ends of the exhaust paths 76X, 76Y, 76Z are connected to an exhaust mechanism such as an exhaust pump (not shown). As shown in Figs. 62 and 63, the above-described shank type nozzle 160 is provided inside the opening 1〇2 of the head body 101. As shown in Fig. 65, the shank type nozzle 160 has a short cylindrical portion 161 and a thin tubular introduction portion 162. The short tube portion 16 1 and the introduction portion 162 are made of a transparent material such as quartz or the like. As shown in FIGS. 62 and 63, the introduction portion 162 extends horizontally. The base end portion of the introduction portion ία is embedded in the head body 101 and supported, and is connected to the end portion of the gas supply path 71. The inside of the introduction portion 162 constitutes an introduction path 162a into which ozone (reactive gas) is introduced. If the diameter of the introduction portion 162 is 1 mm to 5 mm, the flow path of the introduction path H2a is approximately 0.79 mm 2 to 19.6 mm 2 and the length is 20 mm to 35 mm ° .

The end portion of the introduction portion 162 extends to the inside of the opening 1〇2 of the head body 1〇1, and is connected thereto. The short tubular portion 161 is disposed at a central portion of the opening 1〇2 of the head body 101. The short cylindrical portion 161 is formed in a closed cylindrical shape that is vertically opened toward the lower surface of the axis. The diameter of the short cylindrical portion 161 is much larger than the diameter of the introduction portion 162. The axis of the short cylindrical portion 161 is aligned with the illumination axis of the irradiation unit 22 along the central axis of the head body 101. The outer diameter of the short cylindrical portion 161 is mm to 20 mm 〇 mm 2 2 mm, and the height is iq 103065.doc -95 - 1284350. The upper end (base end) of the short cylindrical portion 161 is integrally provided with a cover portion for closing it. 163. The lid portion 163 is disposed just below the illumination window of the irradiation unit 22. As described above, the entire short portion ι 61 including the lid portion 163 is made of a light transmissive material such as quartz glass, but at least the lid portion i 63 may have translucency. In addition to quartz glass, light-transmissive materials such as soda glass and other general-purpose glass, polycarbonate, and acrylic resins can be used. The thickness of the cover 4 163 is preferably 〇·ι mm~3 mm. The introduction portion 162 is connected to the upper side portion of the circumferential portion of the new cylindrical portion 161, and the introduction path 丨62a inside the introduction portion 162 communicates with the internal space 161a of the short cylindrical portion i6. The downstream end of the introduction path 162a forms a communication port i6〇a with the internal space 161a of the short cylindrical portion 161. The cross-sectional area of the flow path of the internal space 16u of the short cylindrical portion 161 is much larger than the cross-sectional area of the flow path of the introduction path 162a and the communication port 160a. For example, the cross-sectional area of the flow path of the communication port 160a is about 0.79 mm 2 to 19 6 mm 2 , and the cross-sectional area of the inner space 161 a of the short cylindrical portion 161 is 19.6 melon 2 to • 3 14 mm 2 . The ozone (reactive gas) that has passed through the introduction path 162a expands from the communication port 16〇& into the internal space 161a of the short cylindrical portion 161, and is temporarily retained therein. The internal space 1613 of the short cylindrical portion 161 forms a temporary retention space of ozone (reactive gas). As shown in FIGS. 61 and 62, the lower surface (end) of the short cylindrical portion 161 is opened. When the processing head 1 is placed at the processing position, the position of the outer peripheral portion (processed position) of the wafer 90 on the stage 10 is directly under the lower end edge of the short cylindrical portion 161, and the short cylindrical portion 161 is covered. The location being processed. The gap between the lower end of the short tube portion 161 and the outer circumference of the wafer 90 is set to a minimum of about 〇·5 mm. Short tube portion 1 ό 1 Inner X. The temporary retention space 16la faces the outer peripheral portion (processed position) of the wafer 90 via the extremely small gap. As shown in Fig. 63, Pfr~, the short tube portion 161 at the processing position is disposed slightly outside the radius of the wafer 9A than the outer edge of the wafer 9A. Thereby, the temporary stagnation space 161a of the inner portion of the short cylindrical portion communicates with the outside via the outer edge of the rim of the projecting portion of the short cylindrical portion 161. The cymbal of the short tube portion is larger than that of the knives. The lower end edge and the outer peripheral edge of the wafer 90 form a discharge gas 164 for the trapped gas in the temporary retention space 161a. The method of removing the film 92c on the outer peripheral portion of the back surface of the wafer 9 by the wafer peripheral processing apparatus of the above configuration is described. By transporting the robot or the like, the wafer to be processed is 9 〇, and the center is placed on the top of the stage 1 , in the same manner, and sucked and clamped. Secondly, the processing head 100 is advanced from the backward position, and is set. At the processing position, the outer peripheral portion of the wafer 90 is inserted into the opening 1〇2 of the head body 1〇1 as shown in the drawing, and the distribution is placed below the short tube portion 161. Next, the laser is turned on. The light source 21 illuminates the laser beam from the irradiation unit 22 to the outer periphery of the wafer 90 immediately below the beam. Thereby, the film 92c that heats the outer peripheral portion of the wafer 90 can be irradiated in a dot-like manner (partially). The cover portion 163 of the tubular portion i6i, but 'because the cover portion 163 is highly transparent Since the light is hard, the amount of light is hardly reduced, and the heating efficiency can be maintained. The above-described laser heating simultaneously transmits ozone from the ozonator 70 to the gas supply path 71. The introduction of the ozone into the introduction portion 丨62 of the shank type nozzle 16〇 Path 162a, and the temporary lag of the inside of the short tube portion i6i from the communication port 103065.doc -97-1284350

Leave space 161 a. Since the temporarily staying M cloth is greatly expanded by the work space 16a than the introduction path 162a and the communication port 160a, the skunk force milk is temporarily dispersed in the temporary vacant space 161a. Thereby, the contact time of the skunk with the above-mentioned local heating position on the outer circumference of the wafer 90 can be extended, and a sufficient reaction time can be ensured. By the fact that the film 92c of the above-mentioned local heating position can be removed by the actual name, the treatment rate can be improved. In addition, it can be used to reduce the need for gas, and to avoid the waste, which can reduce the amount of gas required.

The short cylindrical portion 161 is slightly protruded from the outer periphery of the wafer 90, and the outer peripheral edge of the protruding portion fish wafer 90 is formed from the (four) port of the short cylindrical portion 161, so that the gas is retained in the inner portion of the short cylindrical portion 161. In the temporary state, the gas having a reduced activity and the reaction by-products (fine particles or the like) which are completed by the treatment can be quickly discharged from the discharge port, and the ozone of the material is always supplied to the temporary storage space 161a, and the high reaction efficiency can be maintained. By adjusting the leakage of the suction ports 4 of the exhaust paths 76X, 76Y, 76Z of the three paths, and controlling the leakage, the milk flows. By providing the exhaust paths 76X, 76Y' 7: Z of the three paths, even if the particles are diffused, the exhaust can be surely attracted and exhausted. The same reading is performed by the % transfer station 1G, which covers the entire circumference of the film 92c. In addition, the resident #人 丨η々 is cooled by the cooling and heat absorption mechanism of the 90 ice net to cool the second round. The inner portion of the outer peripheral portion prevents the film 92 from being dissipated by the inner portion of the laser wafer 90. The upper portion of the wafer 90 is prevented from being damaged. The inner portion of the wafer 90 is prevented from being detached from the stage. After the removal process is completed, 10 is taken out from the stage 10, and the processing head 100 is retracted from the wafer 90. 103065.doc -98- 1284350 As shown in Figs. 68(a) to (c), the position of the short cylindrical portion ΐ6ι of the processing position is adjusted in the radial direction of the load σ 10, and the self-crystal of the short cylindrical portion 161 is adjusted. The treatment width of the removed film 92c (the oblique portion of the figure) can be adjusted by the amount of protrusion of the outer circumference of the circle 90.

The inventors conducted the light transmittance test of the lid portion 163 using the experimental apparatus of Fig. 69. The quartz glass plate G is patterned into a lid portion 163, and the laser light L from the laser irradiation unit 22 is irradiated onto the quartz glass plate, and a laser power measuring device D is disposed on the back side thereof, and the power transmitted through the laser is measured and calculated. Attenuation rate. The output of the laser irradiation unit 22 is switched in stages to determine the laser power at each stage. The quartz glass plate G was prepared in two plates having different thicknesses, and each of the glass plates G was measured in the same manner. The result is as follows. [Table 1] Glass plate thickness: 0.12 mm

Yuan lose tH[Watt] | f fire power 縦 value

As in the above table, the attenuation rate is less than 4% regardless of the output of the irradiation unit 22 and the thickness of the glass plate. Therefore, it is found that even if the cover portion 163 of the mouth 160 of the handle-type spray 103065.doc -99-1284350 is introduced from the illumination unit 22, more than 96% of the laser light L can pass through the cover portion 163, and the outer peripheral portion of the wafer 90 is heated. Efficiency is hardly reduced. Further, even if all of the laser energy attenuating portion is absorbed by the lid portion 163, the absorption rate is still less than 4%, so that heat is not generated. It can be sufficiently cooled by the ozone flowing through the shank type nozzle 160. Therefore, the shank type nozzle 16 such as the cover portion ι63 hardly becomes high in temperature, and it is almost unnecessary to require heat. Fig. 70 shows a modification of the shank type nozzle 160. In this modification, a notch 161b is formed in the lower end edge of the short cylindrical portion 161 of the shank configuration nozzle 160 as a discharge port. As shown in Fig. 71, the notch 1611) is disposed on the side opposite to the stage 10 toward the stage 10 in the circumferential direction of the short cylindrical portion ι 61 (corresponding to the position outside the radius of the wafer 9A). The notch 16lb forms a semicircle having a radius of about 2 mm. The shape and size of the notch 161b are not limited to the above, and can be appropriately set.

According to this modification, the gas and the reaction by-products can be completely discharged from the notch 161b, and the fresh ozone can be surely supplied to the temporary retention space 161a, and the high reaction efficiency can be surely obtained. Since the short cylindrical portion 161 of the shank type nozzle 160 itself has a discharge port, it is not necessary to cause the short cylindrical portion 161 to protrude from the outer edge of the wafer 90, and a discharge port 164 is formed between the short cylindrical portion 161 and the outer edge of the wafer 90, such as As shown in Fig. 68(c), even if the short tube portion 161 is aligned with the outer edge of the wafer 90, the gas and the reaction product can be discharged from the temporary storage space ΐ6ι_, and the processing width of the removed film 92c can be enlarged. The range that can be set. 72 and 73 show a modification of the exhaust system. An exhaust nozzle, 103065.doc -100-1284350 76YA '76ZA, may also be provided in the opening 1〇2 of the processing head 1〇〇. As shown by the hypothetical line in Fig. 73, the exhaust nozzle 76 is extended from the exhaust path 76X on the side of the head body 101 toward the central portion of the opening 102 in the substantially tangential direction of the wafer 90 on the stage 10. The end opening of the exhaust nozzle 76A is disposed so as to be slightly away from the downstream side of the short cylindrical portion 161 in the rotational direction of the wafer 90 (clockwise direction as viewed in plan), and is disposed toward the side of the short cylindrical portion 161. . The exhaust nozzle 76 is disposed slightly above the wafer 9 and is inclined downward downward, and the opening of the end faces obliquely downward. The reaction by-products such as fine particles generated on the wafer 90 directly under the short cylindrical portion 161 flow toward the side of the exhaust nozzle 76A as the wafer 90 rotates. By sucking and exhausting it by the exhaust nozzle 76, it is possible to surely prevent the deposition of fine particles on the crystal 90. As shown in the hypothetical lines of Figs. 72 and 73, the exhaust nozzle 76γΑ extends vertically from the exhaust path 76Υ at the bottom of the head body 101. The opening of the end (upper end) of the exhaust nozzle 76γ is disposed so as to be slightly separated from the lower end of the opening of the short cylindrical portion 161. The outer peripheral portion of the wafer 90 is inserted between the short cylindrical portion 161 and the exhaust nozzle 76γ. As a result, the exhaust gas jet f76YA can suck the reaction by-products such as fine particles generated on the wafer 9A immediately below the short cylindrical portion 161 to the lower exhaust gas, thereby reliably preventing the deposition of fine particles on the wafer 90. At the same time, the reactive gas such as hexa-oxygen from the short tube portion i6i can be controlled from the upper edge of the outer peripheral portion of the wafer 9 to the lower edge, and the outer end of the wafer 90 can be made in addition to the upper edge. The lower edge is in contact with the reactive gas. Thereby, the unnecessary film 92c of the entire outer peripheral portion of the wafer row can be surely removed. As shown in the hypothetical line of Fig. 72, the exhaust nozzle 76za is from the exhaust portion 76Z of the bottom side of the opening 102 of the head body (7) 向 103065.doc -101 - 1284350 to the central portion of the opening 1 〇 2, and at B 曰The radius 90 extends in the inner side of the radius. The end of the exhaust nozzle 76ZA is slightly smaller than the short tube portion 161 on the bottom side (outside the radius of the wafer 9A), and is disposed toward the short tube portion 161. The upper and lower positions of the exhaust nozzle 76ZA are disposed at substantially the same height as the lower end portion of the short cylindrical portion 161 and the wafer 9'. Thereby, the exhaust gas nozzle 76ZA can rapidly discharge the fine particles generated on the wafer 9 正 directly below the short cylindrical portion 161 from the wafer 9 排出 to the outside of the radius to attract the gas, and can surely prevent deposition on the wafer 9 〇. The microparticles can surely attract the exhaust gas even if the microparticles diffuse. It is also possible to selectively install one of the three exhaust nozzles 76XA, 76YA, 76ZA, or to selectively install two or three. It can also be installed in 2 or 3, and one of them is selected for suction and exhaust. Two or three simultaneous suction and exhaust can also be performed. The substrate outer peripheral processing apparatus which is not shown in Figs. 74 to 77 uses a long nozzle type nozzle 170 (tube portion) instead of the above-described shank type nozzle 丨6〇. Further, an introduction portion 179 containing an ozone-resistant resin (e.g., polyethylene terephthalate) is used instead of the introduction portion 162 made of quartz which is the same as the above-described shank type nozzle 160. The long nozzle 170 and the introduction portion 179 are independent of each other. As shown in Fig. 76, the long nozzle 170 is formed of a transparent material such as quartz or the like which is made of a transparent material such as quartz, and has a closed cylindrical shape which is longer than the short cylindrical portion 161. For example, the length of the long-type f-mouth 170 is 40 mm to 80 mm, the outer diameter is 5 mm to 20 mm, and the cross-sectional area of the internal space is ΐ9·6 mm2 to 314 mm2. At the upper end (base end) of the long-tube type nozzle 170, a cover portion 173 which is occluded and occluded is shown in Fig. 103065.doc - 102-1284350. As shown in Figs. 74 and 75, the lid portion 173 is disposed just below the illumination window of the irradiation unit 22. The irradiation unit 22 is bundled and irradiated to the outer peripheral portion (processed position) of the wafer 90 on the stage 1 by the cover portion 173. The thickness of the lid portion 173 is preferably 0β1 mm to 3 mm. The long nozzle 170 is disposed vertically at the center of the opening 102 of the head body ι 1 toward the axis. The long nozzle 17 is disposed so as to penetrate the outer circumference of the wafer 1 on the stage 1 (the processed position), and intersects the outer periphery of the wafer 90 at the intermediate portion. A slit 174 is formed in a peripheral portion of the long portion of the long nozzle 17 〇 and the outer peripheral portion of the wafer 9 (the portion corresponding to the position to be processed). The slit 174 covers the substantially half circumference in the circumferential direction of the long nozzle 17 而 and extends the slit 174 to a thickness slightly larger than the wafer 9 , and can be inserted into the outer periphery of the wafer 9 。. For example, the slit 174 is provided at a position of about 1 mm to 3 mm from the upper end of the long nozzle 170. The thickness of the slit 174 (upper and lower dimensions) is about 2 mm to 5 mm. The center angle of the slit φ 174 is preferably 240. ~330. . An introduction portion 179 is connected to a portion 17 i of the upper side (base end side) of the slit 174 of the long nozzle 17 〇. The inside of the upper side of the introduction path 179a in the introduction portion 179 communicates with the inside of the upper squirting portion 171 to form the communication port 170a. The inside of the upper nozzle portion 171 of the long cylindrical nozzle 170 constitutes a temporary stagnation space 171a. When the wafer 9 is inserted into the slit 174, a temporary stagnation space 171a from the upper nozzle portion 171 is formed between the outer edge of the wafer % and the remaining portion 75 of the slit 174 of the long nozzle 170. The discharge port 103065.doc 1284350 75a ° The inside of the lower nozzle portion 170 of the long nozzle 170 forms a discharge path connected to the discharge port 75a. As shown in the figure, the lower end of the long nozzle 170 is directly connected. There is an exhaust path my. In the second embodiment, the wafer 90 to be processed is placed on the top of the stage 1 and the processing head 100 is advanced toward the processing position, and the crystal is inserted into the slit 174 of the long nozzle 17 The outer circumference of the circle 90. Thereby, the inner portion of the long nozzle 17 is vertically spaced apart from the wafer 90, and the internal spaces of the upper and lower nozzle portions 171, 172 are communicated via the discharge port 75a. In the crystal On the outer peripheral portion of the 90, the self-illumination unit 22 is irradiated with a laser to locally heat, and the ozone of the ozonator 7 is sent from the communication port 17〇& to the temporary retention space 17U in the upper nozzle portion 171. Similarly to the first embodiment, the film 92c on the outer peripheral portion of the wafer 9 can be effectively removed. The edge of the slit 174 is extremely narrow from the wafer 9〇, and the lower nozzle portion 172 is sucked by the exhaust mechanism. In addition to ensuring that the gas is shallowly leaked from the edge of the slit 174 _ and the wafer 90, the reaction can be effectively controlled, and the treatment gas and the reaction by-product are forcedly flowed from the discharge port 75a to the lower nozzle portion. 172, the exhaust gas can be forcibly exhausted from the exhaust path 76γ. Even if the fine particles are generated, the exhaust gas can be forcibly exhausted from the exhaust path 76. In the wafer 90, two or more different types of films are stacked on each other, as shown in Fig. 78(4). It is shown that a film 94 containing an inorganic substance such as dioxo is sometimes covered on the wafer %, and a film 92 containing an organic substance such as a photoresist is covered thereon. At this time, in addition to the reactivity of the organic film 92 on the outer periphery of the substrate is removed. Can be set outside the gas supply mechanism The inorganic film 94 on the outer periphery of the substrate is supplied to the other reactive gas 103065.doc 1284350. That is, as shown in FIGS. 79 to 8B, in the substrate peripheral processing device for the two-film laminated wafer, In the one atmospheric pressure processing chamber 2, one stage 10, a first processing head 100 for a reactive gas supply mechanism for removing an organic film, and a second processing head for a reactive gas supply mechanism for removing an inorganic film are provided. 200 (Gas guiding member) The first processing head 1 for the organic film can be processed at the processing position along the periphery of the carrier 10 and the wafer 90 by the advance and retreat mechanism (the assumed line of Fig. 79 and Fig. 8) ) Advance and retreat between the retreat position (the solid line in Fig. 79 and Fig. 8) from the outer side in the radial direction. The configuration of the first processing head 100 itself is the same as that of the processing head 100 shown in Figs. 47 and 48. As shown by the solid line and the two-dot chain line in FIG. 80, the organic film processing head 1 is disposed above the horizontal plane of the wafer 90 to be disposed, but as shown by the broken line in the figure, it may be disposed above Below the wafer configuration surface. The organic layer of the broken line is formed in the same manner as the processing head 100 shown in Figs. 41 to 44 and the like. A pair of organic film processing heads 100 may be disposed above and below with the substrate arrangement surface interposed therebetween. The second processing head 200 for an inorganic film is disposed from the organic film processing head 100 at a distance of 18 degrees in the circumferential direction of the stage 1A. The second processing head 200 can be separated from the processing position along the outer peripheral portion of the wafer 90 (the assumed line in FIG. 80) and the retracted position (the solid line in the figure) from the outer side in the radial direction of the wafer 90 by the advancing and retracting mechanism. advance and retreat. As shown in Fig. 81, the second processing head 200 is formed along the outer circumference of the wafer 9 103 103065.doc • 105-1284350 I® as shown in Fig. 83 'on the small diameter side of the second processing head 2 (9) An insertion port 201 is formed in the inside of the first processing head 2 of the shawl. As shown in Fig. 81 and Fig. 82, the insertion port 2〇1 covers the second processing head and extends over the entire length of the circumference. The thickness of the upper and lower sides of the population 2 () 1 is slightly larger than the thickness of the circle 90. The outer peripheral portion of the wafer 90 is inserted and removed into the insertion port (10) by the advancing and retracting operation of the second processing head 2''.

As shown in Fig. 83, the bottom end of the insertion port 2〇1 is greatly enlarged to become the second reactive gas guiding path 2G2. As shown in Fig. 81, the guide path 2G2 extends in the length direction of the second processing head 200, and is formed in an arc shape viewed from a plane having substantially the same radius of curvature as the radius of the wafer 9〇. When the wafer 90 is inserted into the insertion port 201, the outer peripheral portion of the wafer 90 is located inside the guiding path 2〇2. As shown in Fig. 83, the cross-sectional shape of the guide path 2〇2 is a perfect circle, but the shape is not limited thereto, and may be a semicircular shape or a square shape. Further, the cross-sectional area of the flow path of the guiding path 202 can also be set to an appropriate size. The reactive gas (second reactive gas) for removing the inorganic film is reacted with an inorganic substance such as cerium oxide, and the raw material gas is a PFC gas such as carbon tetrafluoride (CF4) or hexafluoride (c2f6). And a fluorine-based gas such as HFC such as CHF3. As shown in Fig. 82, the fluorine-based gas is introduced into the fluorine electro-discharge device 260 as the second reaction gas generation source, and the atmospheric piezoelectric discharge space 261a between the electrodes 261 is plasma-treated to obtain the inclusion. The second reactive gas of the fluorine-based active species of the free radical. The second reactive gas supply path 262 extends from the atmospheric piezoelectric discharge space 261a and is connected to the inlet (p〇rt) 2〇2a of one end of the guide path 2〇2 of the second processing head 200. The discharge path 263 extends from the other end of the guide path 202 to the outlet 103065.doc -106-1284350. The inorganic film processing head 200 is made of a material resistant to fluorine. The film containing the organic film 92 () and the inorganic film 9 on the outer periphery of the wafer 90 is removed in the following manner. [Organic Film Removal Step; | First, a step of removing the organic film 92c on the outer peripheral portion of the wafer 90 is performed. The processing heads 100, 200 are all pre-retracted to the retracted position. Then, the wafer 90 to be processed is centered on the stage 1 by aligning the Lu mechanism (not shown). Next, the organic film processing head 1 is advanced toward the processing position. Thereby, the laser light-receiving unit 22 faces a portion p of the outer peripheral portion of the wafer 90, and the discharge nozzle 75 and the suction nozzle 76 sandwich the portion p, and face each other in the tangential direction of the wafer 9 (refer to FIG. 47). And Figure 48). The inorganic membrane treatment head 2 is still in the retracted position. Then, the laser source 21 is turned on, and a portion of the outer peripheral portion of the wafer 90 is partially laser-heated, and the ejection nozzle from the organic film processing head 1 is ejected. • Ozone generated by the ozonator 70, etc. The oxygen-based reactive gas is selectively sprayed on the heated portion P (see FIGS. 47 and 48). Thereby, as shown in Fig. 78 (b), the organic film 92 of the above-mentioned portion p is oxidized and etched (ashing). The process completion gas containing the residue of the ashed organic film can be sucked by the suction nozzle 76 and quickly removed. At the same time, by the heat absorption of the stage 10 and the cooling of the portion (main portion) of the inner side of the outer peripheral portion of the wafer 90, it is possible to prevent the film of the inner portion from being affected by heat and deteriorate the quality as described above. Further, by rotating the stage 10 one to several times, the organic crucible 92c of the outer peripheral portion of the wafer 9 〇 103065.doc • 107· 1284350 is removed over the entire circumference, and the inorganic film 94c is exposed all the way. [Inorganic Film Removal Step] Next, the removal step of the inorganic film 94c on the outer peripheral portion of the wafer 90 is performed. At this time, the round 90 is still placed on the stage 1〇. Then, the inorganic film processing head is advanced, and the outer peripheral portion of the wafer 9 is inserted into the insertion opening 2, whereby a predetermined length portion of the outer peripheral portion of the wafer 9 is surrounded by the guiding path 202. By adjusting the insertion amount, the width (process width) of the film 94c to be removed can be easily controlled. In the human, a fluorine-based gas such as carbon tetrafluoride is supplied to the inter-electrode space 261a of the fluorine-based plasma discharge device 260, and an electric field is applied between the electrodes 261 to generate a gas-pressure glow discharge plasma. Thereby, the fluorine-based gas is activated to form a fluorine-based reactive gas which is specifically a fluorine radical. The fluorine-based reactive gas is introduced into the guide path 2〇2 of the inorganic membrane processing head 2 in the supply path M2, and flows along the guide path 202 to the circumferential direction of the outer peripheral portion of the wafer 9〇. Thereby, as shown in Fig. 78 (4), the inorganic portion 94c of the outer peripheral portion of the wafer 9 can be etched away. At the same time, the stage is rotated, thereby covering the inorganic film 94c which is etched and removed from the outer periphery of the wafer 9 weeks. The process completion gas including the by-product of etching is discharged from the discharge path 263. Further, since the insertion σ2〇 is narrow, it is possible to prevent the fluorine-based reactive gas from diffusing from the outer peripheral portion of the wafer 9 to the inner portion. Further, by adjusting the flow rate of the fluorine-based reactive gas, it is possible to further surely prevent the gas from diffusing to the inner portion. Further, the organic film processing head 100 may be retracted to the retracted position before and after the organic film removing step is completed, or may be retracted after the end of the inorganic film removing step. When τ is removed by the first rotation of the stage 1 (), the inorganic film is removed simultaneously with the removal of the organic film. 103065.doc -108 - 1284350 It is also possible to carry out the inorganic film removing step simultaneously with the removal of the organic film when the inorganic film 94C starts to be partially exposed in the middle of the organic film removing step. When the inorganic film component is nitrided or the like, a by-product such as (NH4)2SiF6'Nh4F·HF or the like which is solid at normal temperature is produced by characterization. Therefore, at this time, the organic film processing head 〇〇 (4) processing position can be made during the inorganic film removing step, and the laser heater 2 〇 can continue to be irradiated to the outer periphery of the wafer 90 and the field, thereby enabling the above. At room temperature, it is a by-product of solids. Further, the nozzle 76 can be sucked and sucked by the by-product which is vaporized. After the inorganic film removing step, the head (10) is moved back to the retracted position, and the rotation of the stage 10 is stopped. Then, the refreshing mechanism in the stage 1 is removed to sandwich the wafer 90, and the wafer 9 is carried out. This removal method is in a state where the wafer 9 is continuously placed on the stage 1 while the entire period of the organic film removal step and the inorganic film removal step is passed. Therefore, when the organic film removing step is transferred to the inorganic film removing step, it is not necessary to transfer the _ circle 90 to another position, and the transfer time can be omitted. In addition, the micro-particles are generated by not contacting the transfer and the transfer. Furthermore, there is no /1 realigned. In addition, the processing time can be greatly shortened, and the precision processing can be performed in addition to l1. Further, the alignment mechanism 3 and the carrier 30 can be made common, and the structure of the device can be simplified and intensive. By providing a plurality of processing heads ι, 2 在 in one common processing chamber 2, it is possible to correspond to various film types. Furthermore, it is also possible to avoid the problem of traffic and pollution. Further, since the present invention is an atmospheric pressure system, the driving portion and the like can be easily accommodated in the processing chamber 2. Further, in the wafer 90, in the case where the organic film 92 and the inorganic film 94 are sequentially stacked from the bottom, the inorganic film removing step is first performed, and the organic film removing step is performed second. The angle of separation of the organic film processing head 100 from the inorganic film processing head 2 is not limited to 180 degrees, and may be 120 degrees and 90 degrees apart. The processing positions of the organic film processing head 100 and the inorganic film processing head 2 may be repeated as long as they do not interfere with each other in the backward position and the forward and backward movement. Φ The organic membrane treatment head 1 may be integrally attached to the oxygen-based reactive gas generation source. The inorganic membrane treatment head 200 may be integrally attached to the fluorine-based reactive gas generation source. The inventors conducted an etching experiment using a second processing head (gas guiding member) similar to that shown in Figs. 81 to 83. The object to be treated is a wafer having a diameter of 8 pairs forming a dioxide film. The treatment gas used carbon tetrafluoride at a flow rate of 100 cc/min. The process gas is electropolymerized in the plasma generation space 261 & as a reactive gas, and is guided through the guide path φ 202 of the gas guiding member 2 . Then, the film is not required to etch the entire circumference of the wafer. It takes 90 seconds and the amount of gas used is 15 〇 cc. [Comparative Example 1] In the comparative example, the gas guiding member was omitted, and the apparatus for directly discharging the reactive gas from the nozzle was used. When the etching treatment was performed under the same conditions as in Example 1, the time required was 20 minutes, and the amount of gas used was 2. liter. As a result, it was found that by providing the gas guiding member of the present invention, the time required and the amount of gas used can be greatly reduced at the same time. [Comparative Example 2] 103065.doc -110- 1284350: Externally using an electrode structure having a double ring shape corresponding to the outer diameter of the wafer, the "processing head" is an annular discharge port having a diameter substantially the same as the outer diameter of the wafer. The reactive gas is simultaneously ejected at the same time, and the peripheral portion of the wafer is processed at the same time. The flow rate of the processing gas is 4 liters/min. Other conditions are the same as those in the embodiment (1). The time required is 3 sec., and the amount of gas used is 2 liters. The results show that the time required for the device of the present invention does not change much with the above-mentioned whole week, and the amount of gas used can be greatly reduced. The inventor uses the same sample and device as the above. The processing is set to 50 Å and (10) rpm ', respectively. Then, the film thickness corresponding to the position in the radial direction of the wafer is measured. The result is shown in Fig. 84. In the figure: the horizontal axis is the distance from the outer end of the wafer to the inner side in the radial direction. The number of revolutions is Μ rpmh 'The treatment visibility is about 16 coffees from the outer end, and when the number of revolutions is 3〇〇rPm, it is reduced to the range from the outer end! 〇 _. The higher the higher the reactivity, the more the inner side of the radial direction For the diffusion, the processing width can be controlled by the number of revolutions. 曰 Figure 85 shows another modification of the apparatus for removing the laminated film. The oxygen-based reactive gas and the inorganic film for removing the organic film according to the embodiment are excluded. The fluorine-based reactive gas is produced by a common plasma & electric device. The raw material gas of the reactive gas of the organic film is oxygen (IV). The raw material gas for the reactive gas for inorganic film removal is used. A gas phase body such as carbon tetrafluoride. The material gas supply path 273 from each source gas source merges with each other and extends to the A gas pressure plasma discharge space between the pair of electrodes 271 of the common plasma discharge device 27 Each of the material gas supply paths 273' 274 is provided with on-off valves 273 V, 274 V. 103065.doc -111 - 1284350 The reactive gas supply path 275 from the common plasma discharge device 270 is divided into oxygen systems via a three-way valve 276. Both the reactive gas supply path 277 and the fluorine-based reactive gas supply path 278. The oxygen-based reactive gas supply path 277 is connected to the discharge nozzle of the organic film processing head 1 . The gas supply path 278 is connected to the upstream end of the guide path 2 of the inorganic membrane processing head 2. In the organic film removal step, the opening/closing 阙 274 V of the fluorine-based source gas supply path 274 is closed, and the oxygen-based material gas supply is turned on. The opening and closing valve 273 V of the path 273. Thereby, the material gas of oxygen or the like is introduced into the discharge space 271 of the plasma discharge device 270 to be madly activated, and >±#备1^山甘#|^> An oxygen-based reactive gas such as ozone or the like. In addition, the common reactive gas supply path 2 from the plasma discharge device 270 is connected to the chyle reactivity by the one valve 276. Gas supply, 'L L 277. The oxygen-reactive gas such as ozone is introduced into the discharge nozzle 75 of the organic film processing head 1 to omit the organic film 92c on the outer peripheral portion of the wafer 90. In the inorganic film removing step, the opening and closing valve 273 V of the Mβ 3 oxygen-based material gas supply path 273 is closed, and the opening/closing valve 274 V of the material gas supply path 274 is η*P. Thereby, the carbon tetrafluoride temple mouse original gas is introduced into the plasma discharge device 270 to be plasmalized, and the sputum-reactive gas is used. Further, the three-way valve 276 is connected to the 反应 ^ , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , ,曰, F荨's fluorine-based reactive gas 1 Λ ^ The guide body is immersed in the inorganic hydrazine processing head 200, and the wafer can be etched and removed in the direction of the wafer 9〇90^ σ 7 Weekly inorganic film 94c. 103065.doc -112- 1284350 Fig. 86 is a view showing a modification of the above-mentioned laminated film removing device. The stage 10 of this state has a large-diameter stage body 11 (first stage portion) and a small-diameter center pad 111 (second stage portion). The stage main body 11 is formed in a disk shape having a smaller diameter than the tip of the wafer 90, and a heat absorbing mechanism such as a refrigerant chamber 41 is provided inside. A housing recess 10a is formed in a central portion of the upper surface of the stage body 110. The center spacer 111 is formed in a disk shape which is much smaller than the stage body 11 and is disposed coaxially with the stage body 110. A suction groove for sucking the wafer 90 is provided on the upper surface of the stage body 110 and on the upper surface of the center pad U1, but the drawings are omitted. Below the center spacer 111, a blade rotation shaft U2 is disposed coaxially with the stage body u and the center pad U1. A center spacer 111 is attached to the upper end of the spacer rotating shaft 112. A shim driving unit 113 is connected to the shim shaft U2. The whole driving unit 113 is provided with an elevating drive system for lifting and lowering the shim shaft 112. The cymbal rotating shaft 112 and the center washer 111 can be protruded from above the stage main body 110 by the lifting and lowering drive system (Fig. 86 (b)) and the housing recessed portion 1 1 accommodated in the stage body 1 10 .升降 a storage position (Fig. (a)) between the lifting and lowering (can advance and retreat). Further, the stage body 11 () can be fixed to the center pad 111' and connected to the blade driving unit 113 to be raised and lowered, thereby protruding and accommodating the center pad 111. The upper surface of the center pad i i i of the storage position forms the same plane as the upper surface of the stage body 110, but may also move downward from the upper surface of the stage body 11 . Further, a rotary drive system for rotating the shim shaft U2 and the center shim 111 is provided in the shim driving unit 113. 103065.doc -113 - 1284350 The clamping mechanism for absorbing the wafer 9 is respectively contained in the carrier body 110 and the middle to the cymbal i i i, but the drawings are omitted. The heat absorbing mechanism such as the refrigerant chamber 41 is provided only in the stage main body 11 〇, and is not provided in the middle 塾 piece 111 ′ but may be provided in the center cymbal piece Hi. The inorganic film processing head 200 is located at a height above the center pad ln of the protruding position. The processing head 200 for inorganic film can advance and retreat between the processing position (the assumed line of FIGS. 1 and 2) and the retreat position (the solid line of FIG. 2 and FIG. 2) close to the center pad 111 at this height. . As shown in Fig. 86 (a), in the organic film removing step, the cooling mechanism is activated in a state where the center pad iu is placed at the storage position, and the stage main body ι and the center pad 111 are rotated around the common axis. The head was treated with an organic film. After the organic film removal step is completed as shown in Fig. 86 (b), the organic film processing head is retracted to the retracted position. Next, the center cymbal 111 is raised by the spacer driving unit 丨丨3 to be in the protruding position. Thereby, the wafer 9 can be lifted from the stage • the body 11 〇 upward. Then, the inorganic film processing head 200 is advanced from the retracted position (the hypothesis line of Fig. 86 (b)) to the processing position (the solid line of the figure), and the inorganic film removing step is performed. Since the wafer 90 is separated from above the stage body 110, interference between the outer peripheral portion of the stage body 110 and the lower portion of the inorganic film processing head 2 can be avoided. Further, the depth in the radial direction of the wafer 90 along the insertion opening 201 can be increased. Thereby, it is possible to further surely prevent the second reactive gas from diffusing to the inner portion of the wafer 9'. In addition, the diameter of the stage body 110 can be sufficiently enlarged, and the heat absorbing mechanism can be cooled to the vicinity of the outer periphery of the wafer 90 by 103065.doc -114-1284350. Therefore, it is possible to surely prevent damage to the film quality of the inner portion of the outer peripheral portion of the wafer 90. This inorganic film removing step may only rotate the center pad 111. Thereby, the inorganic film 94c which is etched away from the outer peripheral portion of the wafer 90 can be covered. Figure 8 shows a variation of the configuration of the centering pad carrier. An annular refrigerant chamber 41C is formed inside the stage body 110 as a heat absorbing mechanism. The annular cooling chamber 41C constitutes a φ fluid terminal that causes cold heat to act on the positive pressure of the wafer 90. Instead of the annular cooling chamber 41c, a cooling path such as a concentric multiple circular shape, a radiating shape, or a spiral shape may be formed in the stage main body 110. A suction groove for absorbing the wafer 90 is formed on the upper surface of the stage body 110. The suction groove 15 constitutes a fluid terminal for applying a suction force to the negative pressure of the wafer 90. A suction groove for absorbing the wafer 90 is also provided on the upper surface of the center spacer 111, but the drawings are omitted. The suction path extending from the suction groove communicates with the shim shaft 112. The center hole 111 of the φ is moved up and down (lifting) between the protruding position shown by the hypothetical line of FIG. 87 and the receiving position shown by the solid line of the figure by the lifting drive system of the pad driving unit 113. The center pad at the position is completely housed in the recess 11a of the stage body 110, and the upper surface of the center pad U1 is slightly higher (several mm) than the upper surface of the stage body 110. The flap shaft 112 is movable up and down and rotatably inserted into a rotating cylinder 150 that is coaxial therewith. The main portion of the rotary cylinder 150 is formed into a cylindrical shape of equal thickness throughout the entire circumference, and extends vertically. The upper end portion of the rotating cylinder 150 is coupled and fixed to the stage body 11A. Rotating 103065.doc - 115 - 1284350 The lower end of the drum 150 is sequentially coupled to the rotary drive motor 140 (rotary drive mechanism) via a pulley 144, a timing belt 143, a pulley 142, and a transmission 141. The rotary cylinder 15 is rotated by the rotation drive motor 140 to rotate the stage body 110. The rotary quotient 150 is rotatably inserted and supported inside the fixed cylinder 18A via the bearing B. The fixed cylinder 180 is formed in a vertical φ cylindrical shape coaxial with the rotating cylinder 150 and the shim shaft 112, and is fixed to the apparatus frame F. The fixed cylinder 18 即可 has at least an inner circumferential surface which is circular in cross section. The fixed cylinder 180 is lower than the rotating cylinder 15, and the upper end of the rotating cylinder 15 is protruded from the fixed cylinder 180, and the stage main body 11 is disposed thereon. The rotary cylinder 150 and the fixed cylinder 180 are provided with a cooling flow path in which the annular cooling chamber 41C of the stage main body 11 is used as a terminal, and a suction flow path in which the suction groove 15 is used as a terminal. The path of the cooling flow path is as follows. As shown in Figs. 87, 88, and 89(c), a cold water opening 181a is formed on the outer circumferential surface φ of the fixed cylinder 18〇. The cooling travel path pipe 191 is extended from the cooling water supply source not shown in the drawing and connected to the opening 18la. The contact path 181b extends from the opening 18U toward the inner side of the radius of the fixed cylinder 18〇. As shown in Fig. 89 (c), a groove-shaped annular path 181c covering the entire circumference is formed on the inner circumferential surface of the fixed cylinder 18'. A contact path 丨8丨b is connected to the circumferential direction of the annular path 181c. As shown in Fig. 88 and Fig. 88, an annular seal groove md is formed over the entire circumference of the inner circumferential surface of the upper and lower sides of the upper and lower sides of the annular path 181c. As shown in the figure, the annular sealing groove 112d accommodates the annular cooling to the 103065.doc 116-!284350 path for the packing sheet cm. The cross-sectional shape of the packing sheet 01 is a gate shape (.word =)' and is disposed such that its opening faces the side of the annular path 181e. Lubrication should be applied to the outer surface of the packing sheet G1. As shown in FIG. 87 and FIG. 88, the axial direction path i51ae which is vertically extended in the rotary cylinder 15A is formed as shown in FIG. 88 and FIG. 89 (4), and the lower end of the axial direction path 151a is opened via the communication path 151 {? On the outer circumference of the rotating cylinder (9). The communication path 151b is located at the same height as the annular path 18, and is connected to the annular path 181c. The circumferential direction of the communication path is changed in accordance with the rotation of the rotating cylinder 150. However, the state of communication with the annular path 181c is maintained throughout the entire temperature. As shown in Fig. 87, the upper end portion of the axial direction path 151a is via a rotating cylinder. The connector 154 of the outer peripheral surface is connected to the external relay pipe 157. The relay pipe 157 is connected to the annular cooling chamber 41C via a connector 197 under the stage body 11G. The return path of the cooling flow path is constructed as follows. • As shown in Fig. 87, a connector 198 is provided on the lower side of the stage main body opposite to the 180 degree of the path connecting connector 197. The annular cooling chamber 41C of the stage main body ιι is connected to the external relay pipe 158 via the connector 198. The relay pipe 158 is connected to a connector 155 provided on the outer periphery of the upper portion of the rotary cylinder 15A. As shown in Fig. 87, an axial direction path 152a extending vertically up and down is formed in the rotary cylinder 15''. As shown in Fig. 89 (b), the axial direction path 152 & is disposed on the side opposite to the 18 degrees of the axial direction path 151 & The upper end portion of the axial direction path 152a is connected to the connector 155. 103065.doc -117 - 1284350 As shown in Fig. 87 and Fig. 89 (b), the axial direction path 15 is opened at the outer peripheral surface of the rotary cylinder 150 via the communication path 152b at the lower end portion. The communication path 152b is on the opposite side of the communication path 151b of the access path and is disposed on the upper side of the comparison path 151b. The communication path 152b rotates around the central axis along with the axial direction path 1 52a in accordance with the rotation of the rotating cylinder 15''. An annular path 182c covering the entire circumference is formed on the inner circumferential surface of the fixed cylinder 180. The annular path 182 (the distance from the upper side of the annular path 181 on the path to the path and at the same height as the communication path 15A is connected to the communication path 152b at one of the circumferential directions. The circumferential position of the communication path 152b The rotation of the rotary cylinder 150 changes, but the state of communication with the annular path 182c is maintained throughout 36 degrees. As shown in Figs. 87 and 88, the upper and lower sides of the annular path 182c are sandwiched. On the inner circumferential surface of the cylinder 180, a cooling seal return groove 182d is formed over the entire circumference. As shown in Fig. 88, the sealing groove 182 (1 = cooling return path is filled with "2. Packing sheet 2" The cross-sectional shape is U-shaped (C-shaped and arranged such that its opening faces the side of the annular path 182c. The outer peripheral surface of the packing sheet G2 should be subjected to lubrication treatment. As shown in Fig. 87, Fig. 88 and Fig. 89(b) The fixed cylinder 18 is formed with a connecting passage (4) 2b extending from the annular path 182e to the outside of the radius, and a drain opening connected to the connecting path (4). The opening opens to the outer peripheral surface of the fixed door 80. Cooling back The path tube (9) extends from the opening 18. The contact road 182b and The opening 182a is disposed at the same circumferential position as the mail opening 18U of the access path 18, and is disposed on the upper side. The suction flow path is configured as follows. 103065.doc -118- 1284350 As shown in Figs. 87, 88, and 89 ( a), a suction opening 183 & is formed on the outer peripheral surface of the fixed cylinder 18 上 on the upper side of the opening 182a of the cooling return path. The suction officer 193 is connected to the opening from a suction source including a vacuum pump or the like not shown. The 183ae contact path 18 is swung from the opening 183 & and extends toward the inner side of the radius of the fixed cylinder 18 。. As shown in Fig. 89 (a), a groove-shaped attraction ring covering the entire circumference is formed on the inner circumferential surface of the fixed cylinder 180. The path 183c is connected to the contact path 183b at a position in the circumferential direction φ of the annular path 183c. As shown in Figs. 87 and 88, the upper and lower sides of the annular path 18 are sandwiched by the fixed cylinder 180 On the circumferential surface, an annular sealing groove 183d for suction is formed over the entire circumference. As shown in Fig. 88, an annular suction filling piece G3 is accommodated in the sealing groove 183d. The cross-sectional shape of the packing sheet G3 is The above-mentioned cooling reciprocating path of the packing sheets G1, 72 is also topographical In the shape of a gate (c-shaped), the direction is not the same as that of the above-mentioned packing sheets G1, 72, and the opening is arranged to face the side opposite to the side of the annular path 183c. It is preferable to carry out the outer peripheral surface of the packing sheet 3 φ Lubrication treatment As shown in Fig. 87, a suction axial direction path 153a extending vertically up and down is formed in the rotary cylinder 150. As shown in Fig. 89 (a), the lower end portion of the axial direction path 153 & via the communication path i 53b The opening is on the outer circumference of the rotating cylinder 15〇. The communication path 1531? is located at the same height as the annular path 183' and communicates with the reference circular path 183C. The circumferential direction of the communication path 15313 changes depending on the rotation of the rotating cylinder iso, but the state of communication with the suction annular path 183c is maintained throughout 36 degrees. The axial direction path 153a and the communication path 1531} are disposed at positions offset from the axial direction paths 151a, 52a and the communication paths 151b, 52b of the cooling reciprocating path 103065.doc - 119 - 1284350 by 90 degrees in the circumferential direction. As shown in Fig. 87, the upper end portion of the axial direction path 153a is connected to the external relay pipe 159 via the connector 156 of the outer peripheral surface of the rotary cylinder 15〇. The relay pipe 159 is connected to the suction groove 15 via the connector 199 on the lower surface of the stage main body 11 〇. Next, the operation of removing the films 94c and 92c which are unnecessary for the outer circumference of the wafer 90 using the apparatus of Figs. 87 to 89 will be described. Remove the wafer to be processed from the crucible by a forked robot not shown on the figure and align it with the alignment mechanism (centering). The aligned wafer 90 is lifted horizontally by the fork-like robot arm, and placed in the center pad 111 at the protruding position (the assumed line of Fig. 87). Since the center spacer j i j is much smaller than the wafer 9 ’, the operation margin of the machine arm can be sufficiently ensured. After the wafer 90 is placed on the center spacer 111, the forked robot arm is retracted. The center spacer 111 is driven to attract the wafer 90 to be sandwiched by the center spacer 111. Next, the center pad 111 is lowered to the upper surface of the stage 1 by the lift drive system of the pad driving unit 113. Thereby, the upper surface of the stage abuts against the wafer 90. At this time, the suction of the center cymbal I" is released, and the center spacer 111 is further lowered by several mm to be in the accommodating position (solid line in FIG. 87), and the suction pressure is sequentially passed through the suction tube by driving a suction source such as a vacuum pump. The 丨93, the opening 183a, the contact path 18 complement, the annular path i83c, the communication path 153b, the axial direction path 153a, the connector 156, the relay tube 159, and the connector 199 are introduced into the absorbing groove I5. The circle 9 〇 is sucked at 103065.doc -120-1284350. The stage 1 is indeed held. Then, the rotary drive motor 丨4〇 is driven to rotate the rotary cymbal 150 and the stage 1 to make the wafer 9〇 By this, the communication path 153]3 inside the rotary cylinder 150 is rotationally moved in the circumferential direction of the annular path 183c of the fixed cylinder 18, but the communication path 丨5 is always maintained in communication with the annular path 183c. The absorbing state of the wafer 90 can be maintained even when rotating. As shown in an enlarged view in Fig. 88, the suction pressure of the suction flow path is from the communication portion of the communication path φ 153b and the annular path 183e, and the upper and lower rotating cylinders are passed through 150 outer circumference and fixed cylinder 1 The gap between the inner circumferential surfaces of the inner circumference of the sealing groove 183d also acts between the inner peripheral surface of the sealing groove 183d and the packing sheet G3. The suction pressure acts in the direction in which the packing piece G3 of the sectional door shape expands. The larger the filling piece G3 is attached to the sealing groove 183 (the inner circumferential surface of the sealing groove 183), the sealing pressure becomes large. In this case, the outer circumferential surface of the self-rotating cylinder 150 and the inner circumferential surface of the fixed cylinder 18 can be surely prevented. Leakage occurs in the gap. The organic film processing head 100 is advanced from the backward # position (the assumed line in Figs. 1 and 87) to the processing position (solid lines in Figs. 1 and 87) before and after the rotation of the stage 1 is started. Then, the laser is irradiated from the laser illuminator 2 to a spot of the outer periphery of the wafer 9 to locally heat, and the organic film reactive gas is ejected from the ejection nozzle 75 to contact the wafer. In the outer circumference of the outer circumference of the outer circumference, as shown in Fig. 5(b), the organic film 92c which is effectively etched and removed is treated to suck the exhaust gas by the suction nozzle 76. When the organic film removal treatment is performed, the cooling water is supplied to the annular cooling of the stage body 110. 41C. W is 'the cooling water supplied from the cooling water supply source sequentially passes 103065.doc -121 - 1284350 to the path pipe 191, the opening 181a, the contact path 181b, the annular path pinch 181c, the communication path i5lb, the axial direction path 151a, The connector 154, the relay tube 157, and the connector 197 are supplied to the annular cooling chamber 41C. Thereby, the stage body 11 and the wafer 9 on the inner side of the outer peripheral portion can be cooled. The heat of the illuminating radiation is transmitted from the outer periphery of the wafer 90 to the inside of the radius, and the heat can be quickly absorbed, thereby preventing the wafer 9 〇 from being inside the outer peripheral portion.

The temperature rises. Thereby, it is possible to prevent the film 94, f2 which is damaged from the inner side portion of the wafer 9 损 from being damaged. The cooling water flows through the annular cooling chamber 41C, and then passes through the connector 198, the relay pipe 158, the connector 155, the axial direction path 152a, the communication path 152b, the annular path 182c, the connection path 182b, and the opening 182a. The self-cooling return path tube 192 is discharged. By the rotation of the stage 10, the internal communication path of the cylinder 15 is rotated. The rotation also moves in the circumferential direction of the 辰-shaped path 181c. However, the communication path 151 始终 maintains the communication state with the annular path 181 不论 regardless of the rotational position. Similarly, the communication path 152b also rotates in the circumferential direction of the annular path 182c, but the state of communication with the annular path 181c is always maintained. As a result, the circulation of the cooling water is maintained during the rotation of the stage 10. As shown in FIG. 88, the cooling water from the communication path 151b and the annular path 181 are cooled (between the outer peripheral surface of the upper and lower rotating cylinders 15 and the inner peripheral surface of the fixed cylinder 180). It also flows into the inside of the annular sealing groove 112d, and the packing piece G1 of the n-shaped opening in the opening of the n-shaped packing piece (1) of the inflowing flow section is extended by the pressure of the cooling water, and is attached thereto. The inner circumferential surface of the sealing groove 112d. Thereby, the sealing pressure of the packing sheet 103065.doc • 122-1284350 1 can be surely obtained, and the cooling water can be prevented from leaking. The packing sheet G2 of the cooling return path can also obtain the same effect. When the stage 10 is rotated at least once, the organic film 92c of the entire periphery of the wafer 9 can be removed. When the removal process of the organic film 92c is completed, the gas ejected from the ejection nozzle and the suction from the suction nozzle 76 are stopped. The organic film is retracted to the retracted position by the processing head 1 . Further, the center pad 111 is slightly raised by the elevating drive system of the pad driving unit 113, and is attached to the lower surface of the wafer 90 to be sucked and released. The stage body 110 sucks the wafer 90. The center cymbal 111 is raised to the protruding position by the lift drive system. The turtle continues to advance the inorganic film processing head 200 from the retracted position (solid line in FIGS. i and 87) to the processing position (Fig. i and Fig. 87) By the assumption of the line), the wafer 9 is inserted into the insertion port 2〇1 of the inorganic film processing head 200, and the wafer 9 is outside the circumference. P is located inside the guiding path 202.丨 Lifting the wafer 90', the processing head 2 for the inorganic film at the processing position can be further moved away from the stage body no, and the interference with the stage body 11 can be avoided. Then, the plasma is not shown. In the discharge device, a gas such as nitrogen, oxygen, fluorine or the like according to the inorganic film 94 is plasma-treated, and the plasma gas is introduced into one end of the direction of the extension path 202. The plasma gas passes through the guide k 202, and reacts with the inorganic film 94c on the outer peripheral portion of the wafer 9b, whereby the inorganic film 94 can be etched and removed, as shown in Fig. 5(c), and the gas and by-products are self-guided from the other end of the guiding path 202. Exhaust through an exhaust path not shown on the drawing. 103065.doc 123- 1284350 The center pad 11 1 is rotated by the rotary drive system of the pad driving unit 112. By rotating the center pad 1 ii at least once, the inorganic film 94c of the entire periphery of the wafer 9 can be removed. When the removal processing of 94c is completed, the supply of the plasma from the plasma discharge device is stopped, and the inorganic film processing head 200 is retracted to the retracted position. Next, a fork-shaped robot arm is inserted between the wafer 90 and the stage 10. The fork-shaped robot arm is attached to the lower surface of the wafer 9 半径 outside the radius of the center spacer 111, and φ is released from the center spacer 111. Thereby, the wafer 90 is transferred to the fork-shaped robot arm and carried out. Since the stage structure of the surface treatment apparatus can dispose the cooling and dew condensation of the stage main body 11 from the center axis Lc in the radial direction, it is possible to sufficiently ensure the arrangement of the lifting and lowering, the rotation center spacer 1 , and the like in the center portion. The mechanism and the space of the suction flow path toward the center spacer 111. The stage structure can also be applied to a film in which only an organic film or the like is removed. At this time, of course, the processing head 200 for an inorganic film is not required. In addition, there is no need for a rotary drive system for the center plate 111. In addition to the inner circumferential surface of the fixed cylinder 180, a groove-shaped annular path 181c, 182c, 183c may be formed on the outer circumferential surface of the rotary cylinder 150. Fig. 90 shows the change of the second processing head 200. A plasma discharge device 260 for generating a reactive gas is integrally connected to the second processing head 200 (gas guiding member). The electric discharge device 260 has a hot electrode 261H connected to a power source, and a ground electrode 261E connected to the ground. The space between the electrodes 261H, 261E becomes a plasma generating space 261a of substantially normal pressure. The plasma generating space 261 & 103065.doc -124-1284350 may be plasma-formed by introducing a processing gas such as nitrogen, oxygen, or a fluorine-based gas or a gas-based gas or a mixed gas thereof. A gas collecting nozzle 263 is provided on the lower side of the counter electrode 261H, 261E of the plasma discharge device 260. This gas bundling nozzle 263 is fixed to the upper surface of the second processing head 200 (gas guiding member). A gas clustering path 263a is formed in the gas collecting nozzle 263. The gas clustering path 263a is connected to the downstream end of the plasma generating space 2 61 a, and is gradually reduced in diameter from below. I The lower end portion of the fluorochemical clustering path 263a is connected to the introduction opening 202a at the upstream end of the guiding path 2〇2. The arc length of the gas guiding member 200 (the length along the circumferential direction of the wafer 9) should be appropriately set in consideration of the life of the active species and the like. The gas guiding member 200 as shown in Fig. 9A forms a central angle of about 90 degrees. The gas guiding member 200 shown in Fig. 92 has a fox length with a central angle of about 18 degrees. The gas guiding member 200 shown in Fig. 93 has a fox length of a central angle of about 45 degrees. The position of the introduction opening 202a of the gas guiding member 200 is not limited to the upper side portion of the guiding path 202, and may be disposed on the outer peripheral side of the guiding path 202 as shown in Fig. 94(a). This configuration is suitable when it is important to remove the film from the outer end of the wafer. Further, as shown in Fig. 2(b), the introduction opening 202a may be disposed on the lower side of the guiding path 202. This configuration is suitable for the case where it is important to remove the film on the back side of the outer circumference of the wafer. The introduction opening 202a may be provided on the side end surface of the gas guiding member 2''. Similarly, the discharge opening 202b may be provided in the gas guiding member 2, 103065.doc -125-1284350, or may be provided on the lower side, or may be provided on the outer peripheral side end surface, or may be provided on the upper surface, the gas guiding member 2 The cross-sectional shape and size of the guiding path 202 of the crucible are appropriately set according to the treatment area of the unnecessary material, the type of the membrane, the purpose of the input gas, and the like. As shown in Fig. 94(c), the profile of the guide path 2〇2 can also be reduced.

Reduce the processing width. 9 J

As shown in the figure (4), the guide path 202 may be formed into a top semi-circular cross-sectional shape such that the back surface of the wafer 90 approaches the flat surface of the guide path 2〇2. Thereby, it is possible to focus on the outer periphery of the wafer 9 〇. The guiding path 202 can also be formed into a lower semi-circular cross-sectional shape, and the upper surface of the wafer is close to the bottom surface, and the back surface of the wafer 9 is focused. As shown in the figure (e), the guide path 2〇2 may be formed into a square shape. ° Gas introduction The member 2 is not limited to the removal treatment of an inorganic film that does not require heating, and may be applied to the removal treatment of a film that requires heating such as an organic film. At this time, as shown in Fig. 95, a radiant heating mechanism such as a laser heater 20 can be attached to the gas guiding member 2A. The irradiation unit 22 (irradiation portion) is fixed vertically downward on the gas guiding member 2''. The fiber optic cable 23 extends from the laser source 21 of the laser heater 20 and is optically coupled to the laser illumination unit 22. The laser irradiation unit 22 is disposed in the vicinity of the end of the gas guiding member 200 on the side of the introduction opening 202a. As shown in Fig. 96, the gas guide 103065.doc - 126 - 1284350 at the mounting position of the laser irradiation unit 22 is formed with a rounded portion 2 〇 3 on the upper side of the member 200. The upper end of the hole portion 2〇3 is open to the upper surface of the gas guiding member 200, and the lower end portion communicates with the upper end portion of the guiding path 202. A cylindrical light transmissive member 2〇4 is embedded in the hole portion 203. The light transmitting member 204 is made of a transparent material having high light transmittance such as quartz glass. The light transmitting member 204 is preferably a gas having resistance to ozone such as ozone resistance. The material of the light transmissive member 204 may be made of soda glass or other transparent glass, polycarbonate, acrylic or the like in addition to quartz glass. For example, quartz glass has excellent light transmittance, as confirmed in the experimental examples in Fig. 69 and the table. The upper end surface of the light transmitting member 204 is formed to be exposed in the same plane as the upper surface of the gas guiding member 2''. The lower end surface of the light transmitting member 2〇4 faces the upper end portion of the guiding path 2〇2. A laser irradiation unit 22 is disposed directly above the light transmitting member 204, and an emission window at the lower end of the laser irradiation unit 22 is opposed to the light transmitting member 204. The laser irradiation unit 22 and the light transmitting member 204 are disposed in such a manner that their center lines coincide with each other. The laser beam irradiated from the laser irradiation unit 22 to the immediately below is focused by the light transmitting member 204 and focused inside the guiding path 202. An ozonator 70 for a reactive gas supply source is connected to the introduction opening 202a of the gas guiding member 200. Instead of the ozonator 70, an oxygen plasma device can also be used. The direction of rotation of the stage 10 and further the wafer 90 (arrows in Fig. 95) coincides with the direction of gas flow in the guide path 202. The 5 Haishang structure is a laser from the laser source 21 through the fiber optic cable 23, 103065.doc -127-1284350 and from the ... single shot 22 to the cluster immediately below. The laser beam enters the inside of the guiding path 2〇2 through the light transmitting member 204, and is partially attached to one of the outer peripheral portions of the wafer 90 in the guiding path 2〇2. Thereby, the outer peripheral portion of the wafer is locally heated. At the same time, the ozone gas from the ozonizer 7 is introduced into the guiding path 202 from the introduction opening 2〇2a. By contacting the ozone with the above-mentioned local heating, it is possible to effectively remove an unnecessary film which is required to be heated, such as an organic film. Further, the outer peripheral portion of the wafer 90 is heated at a position close to the upstream end of the guiding path 2〇2. Thereby, it can react fully with fresh ozone. Then, the heating portion moves toward the downstream side of the guiding path 2〇2 as the stage 10 rotates, and the temperature is maintained high for a while. Therefore, in addition to the portion on the upstream side of the guide path 2〇2, the intermediate portion and the downstream portion can also sufficiently react. This can actually improve the processing efficiency. In the case where the film on the back side of the outer peripheral portion of the wafer 90 is to be mainly removed, the laser irradiation unit 22 may be provided on the lower side of the gas guiding member 2, and the laser beam may be irradiated from the lower portion to the guiding path 202. Fig. 97 shows an embodiment in which a mechanism corresponding to a notch portion such as a groove of a wafer and an orientation flat is not provided. As shown in FIG. 101, the wafer 90 is formed in a disk shape. The size of the wafer 9 ( (radius 0 has various specifications. One part of the circular outer peripheral portion 91 of the wafer 90 has to be formed with a notch, and the notch portion forms an orientation flat 93. The size of the orientation flat 93 is based on SEMI and JEIDA specifications. It is decided that the orientation plane length L93 of the wafer such as r = 1 〇〇 mm is L93 = 55 mm to 60 mm. Therefore, the distance from the outer edge of the wafer to the central portion of the orientation flat 93 when the orientation plane 93 is not assumed is assumed. When the film 90 is formed into a film, the film 92 also reaches the edge of the orientation flat 93. As shown in Fig. 98, the wafer processing apparatus of the present embodiment is provided with a ··················匣31〇, robot arm 320, alignment unit 33〇 and processing unit 34〇. 匣3〇 contains the wafer to be processed 90. The robot arm 320 takes out the wafer 9〇 from the 31匣 (Fig. 98(4)) After passing through the alignment portion 33 (Fig. (b)), the wafer is transported to the processing portion 34 (Fig. (C)), and the processed wafer 90 is further returned to the crucible 31, but the drawings are omitted. The alignment portion 330 is provided with an alignment unit 331 and an alignment stage 332. As shown in Fig. 98 (4), the alignment stage 332 is formed into a disk shape, which can be in the middle. Rotating around the shaft. As shown in the figure (b), for alignment (centering), * the wafer 9 is temporarily placed on the alignment stage 332. σ is optically arranged in the alignment early το 331 Non-contact sensor, but detailed drawings are omitted. For example, the non-contact sensor is composed of a light projector that outputs a laser and a light receiver that receives a laser. The light projector and the light receiver are sandwiched from the upper and lower sides. It is disposed so as to be aligned with the outer peripheral portion 9〇a of the wafer 9() of the stage 332. The amount of light received by the light source is changed according to the ratio of the degree of protrusion of the outer peripheral portion of the wafer. Therefore, the eccentricity of the wafer can be detected. Further, by measuring the portion where the amount of received light is not continuously changed, the orientation plane 9 3 (notch portion) can be detected. In addition to the core detecting portion, a "notch detecting portion" for detecting the orientation flat 93 (notch portion) is formed. The alignment portion 330 and the robot arm 32G constitute an "alignment mechanism". As shown in Fig. 97, the wafer is formed. The processing unit 340 of the processing device is provided with a processing stage 1G and a processing head 37Ge processing stage 1 () can be rotated around the vertical (rotation 103065.doc • 129· 1284350 axis to the axis). The rotary drive unit is provided with the encoder motor 342 on the processing stage 1 through the alignment portion 33. Aligned wafer 90 ° As shown in Fig. 97 and Fig. 98 (c), the processing head 37 is disposed on the x-axis (first axis) orthogonal to the two axes. Of course, the y-axis is along the processing stage 1 In the radial direction of the crucible, as shown in Fig. 97, a supply nozzle 375 having a dot shape is provided at the lower end portion of the processing head 37A. As shown in Fig. 99, the dot-shaped opening φ of the supply nozzle 375 is arranged on the 7-axis. As shown in Fig. 97, the base end portion of the supply nozzle 375 is connected to the ozonator 7 (the processing fluid supply source) via the fluid supply pipe 71. A plasma processing head having a pair of electrodes can also be used as the processing fluid supply source. In addition to the dry mode such as the ozonator and the plasma processing apparatus, a wet method in which the chemical is ejected from the supply nozzle 375 as a processing fluid can be used. In the dry type processing head 370, a suction nozzle for sucking the processed fluid (including by-products) is provided in the vicinity of the supply nozzle 375, but the drawings are omitted. The portion 1370 is connected to the mouth sound position adjustment mechanism 346. The nozzle position adjusting mechanism 346 includes a servo motor, a linear motion device, and the like, and the processing head 370 and the nozzle 375 are slid along the y-axis to perform position adjustment (see FIG. 99 (hook, (e) to (1)). Further, the supply nozzle 375 can be moved only along the 7-axis and restrained in other directions. The wafer to be processed has various sizes. The processing head 37 is matched with the size, and is adjusted in the 7-axis direction by the position adjusting mechanism 346. The position is arranged to face the wafer outer peripheral portion 90a. 103065.doc -130-1284350 Further, the position adjustment mechanism 346 is driven in synchronization with the rotation operation of the processing stage 10 by the control unit 350. The control unit 35 The memory has the information of the position and speed of the processing head 37 when the rotation angle of the stage 1 is to be processed. Specifically, as shown in FIG. 1 , the rotation angle of the stage 1 is processed. In the case of the first rotation angle range ', the position of the processing head 37 is fixed, and the fixed position is set. When the second rotation angle range is h, the processing head 370 is moved to set the direction and speed. At this time, the processing stage is processed. 1 〇 旋The rotation angle ' is set by observing the clockwise direction from the y-axis to the plane of the reference point 10p on the stage 10 indicated by the triangular symbol of Fig. 99. Further, the first rotation angle range φι is set at the self-twisting degree. It corresponds to the range of the rotation angle ^ of the central angle of the circular outer peripheral portion 91. The (four) degree range Φ ΐ corresponds to the period in which the circular outer peripheral portion 91 crosses the y-axis. The second rotation angle range (h is set at (1) To the range of 36 degrees. The width of the second rotation angle range φ2 (36〇~φ9ι) is exactly among the orientation plane %

The heart angle φ93 (refer to Fig. 101) is caused. This angular range φ2 corresponds to the period during which the orientation plane 93 traverses the y-axis. The fixed position of the supply nozzle 375 in the first rotation angle range φ1 must be at a position on the y-axis substantially equal to the radius r of the wafer 90 (the distance from the rotating shaft and the radius r of the wafer 90 is substantially equidistantly separated) ). The location is rounded; the y-axis crossing point of the outer peripheral portion 9 1 overlaps. 'Second rotation angle range (4) The previous half moves along the ¥y axis (in the direction of the rotation axis z) and reverses between the intersections of the second angle range φ2. The latter half is positive along the y axis. The setting of the direction (the direction of the rotation axis 103065.doc -131 - 1284350) is set. When the rotation speed of the processing stage 1 is ω1(), the first half and the second half are set to: ν~(2χάχω〇)/φ93 (= (2xdxQi〇xr)/L93)...(1) At this time, the d is the depth d of the orientation flat 93, [the η length (see Fig. 1) is as shown in the formula (1), and the moving speed v (the slope in Fig. 1) is set to be the processing stage. The rotation speed ωΐ() of 1〇 is proportional. In the case of a wafer with a radius of Fi00 mm and an orientation plane length of L93 = 55 mm to 6 mm, the number of revolutions is approximately 丨 (4). The head speed v is about V vent 5 mm/sec~ job/sec. Hey. When the wafer processing apparatus having the above-described orientation flat corresponding mechanism is used to remove the unnecessary film 92c of the outer peripheral portion of the wafer 90, as shown in Figs. 98 (4) and (8), the wafer 90 to be processed is machine arm 32 (). It is taken out from E31() and placed on the alignment stage 332. At this time, usually, the wafer is aligned with the alignment stage 332, and the maximum amount of protrusion a from the load port 332 is a difference (10) from the minimum (four). The gantry 332 is rotated one by one while being edged, and at this time, the maximum protrusion a and its protrusion amount and the minimum dog exit b and the amount of the dog are detected by the aligning unit such as the non-contact sensor. Specifically, the wafer outer peripheral portion 90a and the light receiver are sandwiched from above and below, and the minimum value of the received light amount 盥 the most region & the rotation angle of the stage 332 at this time is measured. At the same time, the nucleus of the orientation is also detected by measuring the angle of rotation of the stage 332 when the iL is not continuously increased. According to the measurement result, the centering of the robot arm into the wafer 90 (the pairing, the introduction of the field), that is, only the wafer 90 on the stage 332 from the above-mentioned maximum dog outlet to the minimum protrusion virtual highlight... Distance: Moved away from moving the wafer 9〇' can also move 103065.doc -132-1284350 332. At the same time, the orientation plane % is oriented toward the designated direction. Next, as shown in Fig. 98 (4), the wafer 9 is transported to the processing unit 340 by the robot arm 32, and is placed on the processing stage (7). Since the wafer 9 is subjected to the above alignment operation, the processing stage 1() and the center can be correctly __0, and the wafer 90 can be directly transported from the cassette 310 to the processing stage 1 The same alignment (centering) as described above is performed on the processing stage 1G. Thus, the alignment stage 332 can be omitted. The wafer 90 is set to handle the squeak, and the orientation plane 93 is oriented toward the designated direction in addition to the processing load (four) and center. As shown in Fig. 99 and Fig. 99 (4), in the present embodiment, the orientation plane is oriented in the direction in which the left end portion 93a faces the processing stage 10. The reference point 10p of the processing stage 1 is placed on the 7-axis in an initial state (at the start of processing). Continuing, as shown in FIG. 99 (4), the processing will be performed by the position adjustment mechanism 346.

The head 370 is positionally adjusted in the y-axis direction in accordance with the size of the wafer 9G. Thereby, the supply of the mouthpiece 375 is arranged in opposition to the outer peripheral portion of the wafer, and is disposed opposite to each other. This embodiment is disposed opposite to the corner portion formed by the orientation early # Jirr η, Λ r-n octagonal manta ray 93a and the circular outer peripheral portion 91. Then, the ozonator 70 is sprayed to the head 370, and is sprayed 90a from the supply nozzle 375, and ozone which generates 92c from the unnecessary film 92C is supplied to the processing via the tube 71. The ozone is injected to the outer peripheral portion of the wafer for reaction. Thereby, the unnecessary film can be removed and the processing stage 10 can be rotated by a certain number of revolutions around the encoder motor 342 103065.doc -133 - 1284350 around the Mz axis. The direction of rotation is as shown by the arrow in Fig. 99(a). Thereby, the wafer 90 is rotated as shown in (4) to (1) of the figure according to the time, and the ozone ejection portion is sequentially transferred in the circumferential direction, and the unnecessary outer periphery of the wafer 4 90a can be sequentially removed in the circumferential direction. Membrane 92. . In the figures (8) to (1), the hatched portion of the outer peripheral portion of the wafer indicates the portion after the unnecessary film defect is removed. The progress details the removal step of the unwanted film. φ The control unit 350 drives the position adjustment mechanism 346 in synchronization with the rotation of the processing stage 10 in accordance with the setting data corresponding to the above-described Fig. 100, and the position adjustment processing head 370 further supplies the nozzle 375. That is, as shown in Fig. 10, when the rotation angle of the processing stage 10 is in the range 吣, the supply nozzle 375 is fixed in advance to a position on the y-axis which is substantially equal to the radius ^ of the wafer 90. Thereby, as shown in Figs. 99(a) to (e), during the period in which the circular outer peripheral portion 91 passes through the y-axis, the supply nozzle 375 can be accurately directed toward the circular outer peripheral portion. Therefore, it is possible to surely eject the ozone to the circular outer peripheral portion 91, and it is possible to surely remove the unnecessary film 92c of the circular outer peripheral portion 91. Then, the processing completion portion extends in the circumferential direction of the circular outer peripheral portion 91 with the rotation, and then, as shown in Fig. 99 (e), the processing of the king's outer circumference of the circular outer peripheral portion is finished, and the right end portion 93b of the orientation flat 93 It reaches the position of the supply nozzle 375. At this time, the rotation angle range is switched from the 成 to the gentry 100, and the front half of the rotation angle range Φ2 is the processing head 37 〇 and then the nozzle 375 approaches the processing stage 1 at the speed v of the above formula (1). Move in the direction of 〇. Further, as shown in Figs. 99(e) to (g), the right side portion of the orientation plane at this time traverses the y-axis, and the crossing point thereof is shifted toward the side of the rotation axis (z-axis) with the rotation. The variation coincides with the movement of the above-mentioned supply nozzle 375 by 103065.doc -134-1284350. Thereby, the supply nozzle 375 can always be along the edge of the right side of the orientation flat (four), and the portion of the supply portion 375 can be surely removed. The supply nozzle 375' at the midpoint of the 'rotation angle range φ2' shown at 100 is moved from the position of the material (10) at the material peripheral portion 91 to the processing stage 10 and is moved to the depth of the orientation plane 93. At this time, as shown in Fig. 99(g), the orientation flat 93 is orthogonal to the parallel axis, and the just middle portion of the orientation flat 93 passes through the position of (4) on the y-axis. Therefore, the supply nozzle 375 and the orientation flat 93 are The intermediate portion is in the same position, and the unnecessary film 92e at the intermediate portion of the orientation flat 93 can be surely removed. As shown in Fig. 100, the moving direction of the supply nozzle 375 is reversed at the intermediate point of the rotation angle range φ2, and the rotation angle range is the second half. Self-handling stage 1 away from Moving to the 'moving speed is the same as the first half (top: speed V of equation (1)). At this time, as shown in Fig. 99(g) to (1), the left side of the orientation plane 93 crosses the y-axis' It is offset in the positive direction of the x-axis. The movement of the passing point is substantially the same as the movement of the supply nozzle 375. Thereby, the supply nozzle 375 can be surely removed along the edge of the left side of the orientation plane %. The portion of the film 92c is not required. In addition to the circular outer peripheral portion 91 of the wafer 90, the entire surface of the outer surface including the orientation plane % can be surely removed from the film 92c required for T. 曰99(1), red turn When the angle is exactly 360 degrees, the supply nozzle 3 75 returns to the original position. The unnecessary film is removed from the processed wafer 9 〇, and the robot arm is taken out from the processing stage 10 and returned to the 匣 3 1 〇. The wafer processing apparatus can also process corresponding to the orientation plane 93 by sliding the processing head 37 in the 7-axis direction, except that 103065.doc -135-1284350 can correspond to the size of the wafer 90. Therefore, the processing is performed. The entire drive system of the part 340 is only one sliding (four) axis) and 1 The two axes of the rotation axis (z axis) are sufficient, and the structure can be simplified. In the alignment, the orientation plane 93 is oriented in advance in the specified direction l〇P of the processing stage ig, in synchronization with the rotation of the processing stage 10, The position adjustment is supplied to the nozzle 375, and as a result, the supply nozzle 375 can be aligned along the orientation, and even if the film removal process is not required, the orientation plane 93 can be detected to be locked, and the control can be performed. 1 As shown in FIG. You can draw the arc on the graph, gradually reduce the half before the rotation angle range φ2, and gradually increase the orientation flat in the second half.

The rotation angle during the surface treatment is wide. The processing head 370 in the angle target cofferdam is further supplied with the moving speed of the squealing 375. Thereby, ^, the movement of the processing P0 and the orientation of the orientation plane 93 are changed to one point. ^ L is the same step, so that the supply nozzle 375 can be more surely κ along the edge of the orientation plane. The device can also correspond to a recess in the outer circumference of the wafer. The supply nozzle must be moved in the direction of the first axis. It can be used at the end of the month, and the whole of the processing head has no high temperature treatment rate, and the heater is located. The heater must be in contact with the heater during the heat treatment. In addition, the heat absorbing mechanism can absorb heat and cool in the non-portion of the virtual state. The sigh is placed in the center of the processing fluid and is not limited to the ozone gas, the film quality and the wet or dry type, or the film 92c or even the liquid. ^, cutting the gas of various components 103065.doc -136- 1284350 The device shown in Figs. 103 to 105 is the first axis of the configuration processing head 370. As shown in Fig. 103, the supply nozzle 375 is positionally adjusted on the x-axis by the position adjustment mechanism 346. As shown in Fig. 104, a wafer peripheral position measuring device 34i is disposed on the y-axis. The wafer peripheral position measuring device 341 moves toward the measurement position (solid line in FIG. 1A(5)) that is advanced in the direction approaching the rotation axis Z by the advance/retract mechanism not shown in the drawing, and is away from the rotation axis z. The direction between the backward and backward positions (the assumed line in Fig. 105(a)) can advance and retreat on the y-axis. The wafer peripheral position measuring device 341 is constituted by an optical non-contact sensor, but the detailed drawings are omitted. For example, the non-contact sensor is composed of: a light-emitting diode II that rotates out of the laser, and a light-receiver that receives the laser. These light projectors and the optical device are disposed so as to sandwich the outer peripheral portion 90a of the wafer 9 disposed on the stage 1 from the upper and lower sides. The laser light from the light projector is shielded according to the degree of protrusion of the outer periphery of the wafer, and the amount of light received by the light receiver changes. Thereby, the position of the outer peripheral portion of the wafer can be detected (further detecting the amount of eccentricity of the wafer). • In Figures 104 and 105, the pattern of the orientation plane and the groove on the outer circumference of the wafer is omitted. As shown in Fig. 104, the alignment mechanism 33 is not provided in the apparatus. The control unit 350 performs the following control operations (see the flowchart of FIGS. 1 and 6). As shown in Fig. 104 (a), the wafer to be processed 9 〇 is taken out from the robot arm 32 (step 1 〇 1), and as shown in the figure (8), it is placed and sucked on the stage 1 (Step 102). Since the alignment operation is not performed, the wafer % usually has a plurality of eccentricities on the stage 1 . Next, the rotation of the stage 10 is started (step 1〇3). The direction of rotation is shown in the arrow curve of Fig. 103065.doc -137- 1284350 1〇5(a), and the clockwise direction is formed as viewed in plan. Therefore, the wafer outer peripheral position measuring device 341 is disposed on the upstream side and the processing head 37 is disposed on the downstream side, 90 degrees apart in the rotational direction. Further, as shown by the open arrow in FIG. 105(a), the wafer outer peripheral position measuring device 341 is advanced from the retracted position to the measurement position along the y-axis (step 1 〇, and the processing head 370 is self-aligned along the X-axis. The retracted position proceeds to the processing execution position (step 105). Continuing, the wafer outer peripheral position measuring device 341 measures the crossing point on the y-axis of the wafer outer peripheral portion 9A (step 11A). As will be described later, in this step In the 11th step, the rotation period of the stage 10 is 4 minutes. Before the cycle, the position of the outer peripheral portion 9〇a of the wafer crossing the X-axis is calculated. Next, after the judgment of step 111, the process proceeds to step 112, where the position is adjusted. The mechanism 346 causes the supply nozzle 375 of the processing head 370 to be located at the position on the x-axis which is the same value as the y-axis crossing point measurement value in the above step 110. The time at which the supply nozzle 375 is located at its place is taken as step 11 After one cycle, as shown in Fig. 105 (a), when the measured value of step 11 is the y-axis, as shown in Fig. 105 (b), the supply nozzle 375 is placed after the cycle of 4 minutes. The position of the ri [mm] on the shaft. Thereby, in the outer peripheral portion 9a of the wafer, in step 110 When it is rotated 90 degrees across the y-axis and crosses the x-axis, the supply nozzle 375 can be placed at the X-axis crossing point. Since there is a time margin of the cycle portion of 4 minutes, the feedback processing can be surely performed. The outer peripheral position measuring device 341 and the control unit 350 constitute a "calculation unit that calculates the position where the outer peripheral portion of the wafer passes through each time point for the first axis." Further, 'Fig. 105(4)'(b) '(4), (4) sequentially displays each * In the state of 103065.doc -138- 1284350 for one week, in the graphs (b) to (d), the % of wafers of the dummy rays are respectively displayed before the period of one-fourth of a cycle. Meanwhile, via the tube 71 The ozone gas of the ozonator 7 is supplied to the processing head 370, and is ejected from the supply nozzle 375 (step 113). Thereby, ozone can be ejected to the X-axis crossing portion of the wafer outer peripheral portion 90a, and the ozone can be removed. The unnecessary film 92c is used. The step 113 of starting the ozone discharge is performed only in the initial flow, and then the ozone discharge is continued. φ Then, returning to the step 11 〇, the y-axis crossing point of the wafer outer peripheral portion 90a is measured (step 110). ), based on the measurement result, after repeating the 4th cycle The operation of the position adjustment (step 112) of the supply nozzle 375. Thereby, as shown by the time in FIG. 105 (a) to (e), the wafer 9 依 can be rotated in the circumferential direction. The unnecessary film 92c of the outer peripheral portion 9a of the wafer is removed. In the figure (b) to (the phantom, the hatched portion of the outer peripheral portion 9a of the wafer indicates a portion after removing the unnecessary film 92c. Even if the crystal The circular 90 eccentricity can still be adjusted with the contour position of the outer peripheral portion 9〇a to adjust the supply nozzle 375, and the unnecessary film 92c can be surely removed. Therefore, it is not necessary to provide an alignment mechanism for eccentricity correction. Try to simplify the structure of the device. Further, after the wafer 90 is taken out from the hiding 310, it can be directly placed on the stage 10 without passing through the alignment mechanism, and the unnecessary substance removal processing can be performed immediately, and the alignment operation of the object can be omitted. Therefore, the overall processing time can be shortened. Further, since the position of the supply nozzle 375 is adjusted and the ozone gas is ejected at the same time as the X-axis crossing point, the processing time can be further shortened. 103065.doc -139- 1284350 Then, when the gas is discharged from the beginning of the step 113, the wafer 90 is rotated once, and the outer peripheral portion of the circle is rounded, and the unnecessary film removal process is completed in all the circumferential directions (refer to Fig. 105 (e )). In the judgment of "Is the wafer full-cycle processing completed?" in step 111, the judgment is "Yes". Thereby, the discharge of the ozone gas from the supply nozzle 375 is stopped (step 12A). Then, as shown in Fig. 105(e), the processing head 37 is retracted to the retracted position (step 121), and the wafer outer peripheral position measuring device 341 is moved back to the retreating position (step 12 2). Further, the rotation of the stage 10 is stopped (step 123). Then, the stage 10 is released from the suction of the wafer 9 (step 124). Then, the robot arm 320 carries the wafer 90 from the stage 10 (step 125), and returns to the crucible 310 (step 126). The wafer outer circumferential position measuring device 341 is disposed 90 degrees from the supply nozzle to the upstream side in the rotation direction of the stage. However, the wafer outer circumferential position measuring device 341 is not limited to 9 degrees, and may have a larger angular deviation than φ or a small angle deviation. When the wafer outer circumferential position measuring device 341 detects the notch portion of the wafer and the notch portion such as the groove to calculate the X-axis crossing point, the edge of the notch portion can be processed. The control operation shown in the flowchart of Fig. 106 performs nozzle position adjustment and gas ejection simultaneously with the position calculation of the outer peripheral portion 9〇a of the wafer, but as shown in the flow chart of Fig. 107, it may be on the outer periphery of the wafer. After the position calculation of the entire circumference of 9〇a is completed, the nozzle position adjustment and the gas ejection are performed. That is, in FIG. 107, the wafer outer periphery in steps 1〇4 and 105 is 103065.doc -140-1284350

After the position of the material 341 and the processing head 37G is set, the wafer peripheral position measuring device 341 measures the crossing point of the wafer outer peripheral portion 90a on the y-axis during the period in which the wafer is rotated by the wafer, and the crystal is obtained. The outer circumference of the circle 9 (the position of the whole circumference = material (step 115). That is, the data of the 7-axis crossing point of the outer peripheral portion 9〇3 of the wafer corresponding to the rotation angle of the stage 1 is obtained. At the time of 9 〇, it is the calculation data of the α2 axis crossing point of the wafer outer peripheral portion 9 () corresponding to the rotation angle of the stage 1 。. The calculation data is stored in advance in the memory of the control unit 350. In addition, the above calculation data can also calculate the eccentricity and eccentric direction of the wafer 90 on the stage 1 and use the eccentric data to replace the position data of the whole week. 1()1, the eccentricity of the error when the wafer 9G is placed on the stage 1 (), as shown in FIG. 104(b), the maximum amount of protrusion from the stage 1 is present in the outer peripheral portion 90a of the wafer. & offset from the minimum position by 18 degrees. The maximum protrusion a and the amount of protrusion and the maximum are detected by the wafer peripheral phase detector 341 The protrusion b and the amount of protrusion. From the direction of the smallest protrusion b to the direction of the largest protrusion a: the eccentric direction, the difference between the protrusion amount of the largest protrusion a and the protrusion of the smallest protrusion 即 is the eccentricity According to the eccentric core material and the semi-mussel material of the wafer crucible, the X-axis crossing point of the outer peripheral portion 9〇a of the wafer corresponding to the rotation angle of the stage 1〇 can be calculated. Then, enter In step U6, according to the above calculation data, the position adjustment mechanism 346 adjusts the processing head 370 in the X-axis direction to supply the nozzle 3/5. That is, according to the rotation angle of the stage 10, the wafer 9 is in the rotation angle thereof. The supply point 375 is set at the calculation point of the X-axis crossing. Simultaneously with the position adjustment, the ozone is ejected from the supply nozzle 375. Thus, regardless of the eccentricity of the wafer, the 105065.doc -141 - !284350 ejector can be ejected. The ozone is passed to the x-axis of the outer peripheral portion 90a of the wafer, and the unnecessary film 92c is removed. The nozzle position adjustment and the ozone discharge are continued in the step 116 before the round 90 is rotated once. , covering the circumferential direction of the outer periphery of the wafer: The unnecessary film 92c can be removed from the field. Therefore, it is judged as "yes" in the judgment "whether or not the wafer is completely processed in the end of the wafer?" in the step ΐ7. The subsequent steps are the same as in Figs. 1 to 6 (steps 120 to 126). (Effective use of the industry) This month, if it is used in the process of semiconductor wafer and the process of liquid crystal display substrate, it is not necessary to remove the film on the outer periphery. [Simplified description of the drawing] Fig. 4 shows the first aspect of the present invention. The substrate peripheral processing apparatus of the embodiment is a front cross-sectional view taken along line W of Fig. 2. Fig. 2 is a plan view of the apparatus. The figure is a front cross-sectional view showing a portion of the film removal processing of the apparatus. Fig. (a) is a graph showing an experimental example of the wafer temperature at a distance from the vicinity of the heated portion of the outer edge of the wafer to the inner side in the radial direction by means of the same apparatus as Fig. Fig. 4(b) shows a measurement temperature diagram in which the position closer to the portion to be heated (very close to the portion to be heated) is taken as the origin of the horizontal axis. Fig. 5 is a graph showing the results of other experimental examples of the wafer temperature at a distance from the outer edge of the wafer to the inner side in the radial direction of the outer edge of the wafer by the same apparatus as Fig. 1. 103065.doc -142- 1284350 Figure 6 is a front view of the stage of the changing aspect of the heat absorbing mechanism. Figure 7 is a front elevational view of the stage of the changing aspect of the heat absorbing mechanism. Figure 8 is a plan view of the stage of the changing aspect of the heat absorbing mechanism. Fig. 9 is a plan view showing a modification of the heat absorbing mechanism of the stage. Figure 10 (a) is a plan view of the stage of the changing aspect of the heat absorbing mechanism. Figure 10 (b) is a front view of the stage of Figure 10 (a). Figure 11 is a front elevational view of the stage of the heat sink using a modified version of the Peltier element. Fig. 12 is a plan view showing a stage in which only a heat absorbing mechanism is provided in the outer peripheral region. Fig. 13 is a side view showing the stage of Fig. 12 and the like. Fig. 14 is a plan view showing the periphery of the groove on the outer periphery of the wafer in an enlarged manner, (a) showing the case where the irradiation spot diameter of the laser irradiation unit is kept constant, and (b)_ showing the position of the groove to enlarge the irradiation spot diameter. State, (e) shows the state after processing of (b). Fig. 1 is a front view showing the state in which the focus of the laser irradiation unit is aligned on the outer circumference of the wafer, and the diameter of the φ irradiation is formed to be 1 mm. Fig. 16 is a front elevational view showing the state in which the focus processing is adjusted so that the irradiation spot diameter of the laser irradiation unit is 3 mm on the outer circumference of the wafer. Fig. 17 is a front view showing a state in which the laser irradiation unit is slightly slid in the radial direction of the wafer to be processed in a manner corresponding to a processing width larger than the irradiation spot diameter. Θ Figure 18 (a) is a plan view of the stage inserted into the vacuum chuck mechanism. Figure 18 (b) is a front cross-sectional view of the stage of Figure 18 (a). Figure 19 (a) is a plan view of a stage of a modified state of the vacuum chuck mechanism 103065.doc -143 - 1284350 Figure 19 (b) is a front cross-sectional view of the stage of Figure 19 (a). Figure 20 is a plan view showing a stage of a modification of the vacuum suction chuck mechanism. Figure 21 is a front cross-sectional view of the stage of Figure 20. Fig. 22 is a plan view showing a stage in which a modification of the chuck mechanism is provided only in the outer peripheral region. Figure 23 is a front cross-sectional view of the stage of Figure 22. Fig. 24 is a front cross-sectional view showing a substrate _ peripheral processing apparatus according to an embodiment in which a reactive gas supply mechanism or the like is changed. Fig. 25 is a front cross-sectional view showing a substrate outer peripheral processing apparatus according to a modification of a reactive gas supply mechanism. Fig. 26 is a front cross-sectional view showing a substrate outer peripheral processing apparatus according to a modification of a reactive gas supply mechanism. Fig. 27 is a front sectional view showing a substrate peripheral processing apparatus according to a modified embodiment of the arrangement relationship between the radiant heater and the reactive gas supply means. Figure 28 is a front elevational cross-sectional view showing the film removal processing portion of the apparatus of Figure 27 in an enlarged manner. Fig. 29 is a front sectional view showing a substrate outer peripheral processing apparatus according to a modified embodiment of a reactive gas supply source of a reactive gas supply means. Fig. 30 is a front sectional view showing a substrate peripheral processing apparatus according to an embodiment of the radiant heater and the reactive gas supply means. Figure 31 is a plan cross-sectional view of the above apparatus taken along line χχχ χχχ ι of Figure 30. Figure 32 is a graph showing the measurement of the wafer temperature 103065.doc 1/t/1 1284350 degrees for the distance from the side of the heated portion to the inner side of the heated portion from the outer edge of the wafer by the same apparatus as in Figure 3〇. Results map. Figure 3 is a graph showing the half-life of ozone decomposition over temperature. Fig. 34 is a front cross-sectional view showing a substrate outer peripheral processing apparatus according to an embodiment of the additional nozzle cooler and the inert gas supply unit. Figure 35 is a front cross-sectional view showing the substrate peripheral processing apparatus of the embodiment in which the radiant heater is changed in Figure 34.

Fig. 36 is a front sectional view showing a substrate peripheral processing apparatus of a modified embodiment of a nozzle cooler or the like. The outer periphery of the substrate is shown in Fig. 37 as a front cross-sectional view showing the modification of the additional gas retention means. The explanation of the front view. Fig. 38 showing an embodiment of an additional optical transmissive fence Fig. 39 is a front view showing an embodiment of an optical system using a radiant heater. Front cross section of the port forming member Fig. 40 (a) is a discharge surface view of the swirling flow forming portion. Fig. 40 (b) is a side view showing a spray and a side cross section of the above-described swirling flow forming portion. Fig. 41 is a plan view showing a peripheral processing apparatus having a discharge nozzle and an exhaust material. The base of the processing head Fig. 42 is a front view of the substrate peripheral processing apparatus of Fig. 41. Fig. 43 is a plan view showing a modification of the peripheral processing apparatus having the discharge nozzle and the exhaust nozzle. FIG. 44 is a front view of the substrate peripheral processing apparatus of FIG. 43 (a) is an enlarged front view of the loading HP of FIG. 43, and (b) 103065.doc -145-1284350 is a bottom surface thereof. Figure. Fig. 46 (a) is a plan view showing the results of measurement of the temperature distribution on the side surface of the wafer when the outer peripheral portion of the wafer is rotated by laser light. Fig. 46 (b) is a view showing a measurement result of the w-degree of the position in the circumferential direction of the wafer back surface in Fig. 46 (a). Fig. 47 is a plan view showing another modification of the substrate peripheral processing apparatus having the processing head having the discharge nozzle and the exhaust nozzle. Figure 48 is a front elevational view of the substrate peripheral processing apparatus of Figure 47. Fig. 49 is a schematic plan view showing a wafer peripheral processing apparatus in which a suction nozzle is disposed outside the radius of the wafer. Fig. 50 is a schematic plan view showing a wafer peripheral processing apparatus in which a suction nozzle is disposed on a side opposite to the discharge nozzle with the wafer interposed therebetween. Figure 51 is an enlarged cross-sectional view showing the periphery of the outer peripheral portion of the wafer taken along line 50 of Figure 50.

Fig. 52 is a plan view showing a substrate peripheral processing apparatus in which the irradiation direction is from the upper side of the wafer and obliquely downward from the outside of the radius toward the outer peripheral portion of the wafer. Figure 53 is a front elevational view of the substrate peripheral processing apparatus of Figure 52. Fig. 54 is a front elevational cross-sectional view showing the irradiation unit of Fig. 53 and the outer peripheral portion of the wafer in an enlarged manner. Fig. 55 is a cross-sectional view showing the outer peripheral portion of the wafer after the removal process is not required. Fig. 56 is a front view of the irradiation unit from the side of the wafer toward the wafer. Fig. 5 is an irradiation unit from the lower side of the circle Ba® and from the outer side of the radius to the outer periphery of the wafer. Positive explanation map. 103065.doc -146- 1284350 Fig. 5 is a front view of a substrate peripheral processing apparatus having a tilting irradiation unit and a vertical irradiation unit. Fig. 5 is a front view of a substrate outer peripheral processing apparatus including a mechanism for moving an irradiation unit in an arc shape on the upper side of the wafer. Fig. 60 is a view in which the irradiation unit is made to be smaller than the lower side of the wafer? A front view of the substrate peripheral processing device of the melon-like moving mechanism. Fig. 61 is a longitudinal sectional view showing the base φ material peripheral processing apparatus having a shank type nozzle along the line LXI_LXI of Fig. 62; Figure 62 is a longitudinal sectional view of the processing head taken along line LXII-Lxn of Figure 6; Figure 63 is a plan sectional view of the substrate peripheral processing apparatus taken along line ?XIII_LXln of Figure 61. Figure 64 is a plan sectional view of the substrate peripheral processing apparatus taken along line LXIV_LXIV of Figure 6; Figure 65 is a perspective view of the above-described shank type nozzle. Fig. 66 is an enlarged cross-sectional view showing the state of the film removal process of the wafer peripheral portion of the apparatus of Fig. 6A. Figure 67 is a plan view showing the substrate peripheral processing apparatus of Figure 61. Fig. 68 (a) - (c) are plan views showing an example of setting of the arrangement relationship between the short cylindrical portion of the shank type nozzle and the outer edge of the wafer. Fig. 69 is a front elevational view showing the experimental apparatus for the light transmittance measurement experiment of the above-described shank type nozzle. The figure shows a perspective view of a change of the above-described shank type nozzle. Fig. 71 is a cross-sectional view showing the section of the outer peripheral portion of the #a® by using the substrate peripheral processing apparatus of the handle-turning nozzle of Fig. 7(), 103065.doc - 147 - 1284350. Fig. 72 is a longitudinal sectional view showing a modification of the exhaust system of the substrate outer peripheral processing apparatus having the sill-type nozzle along the line LXXII-LXXII of Fig. 73; Figure 73 is a longitudinal sectional view of the above apparatus taken along the line LXXIII_LXXIII of Figure 72. Fig. 74 is a longitudinal sectional view showing a substrate outer peripheral processing apparatus including a long-nozzle nozzle in place of the handle-type nozzle along the line LXXIV-LXXIV of Fig. 75; φ Fig. 75 is a longitudinal sectional view of the processing head of the above apparatus taken along the line LXXV-LXXV of Fig. 74. Figure 76 is a perspective view of the above-described long nozzle. Fig. 77 is an enlarged cross-sectional view showing the state of film removal by the peripheral portion of the wafer by the apparatus of Fig. 74. 78 is an enlarged cross-sectional view showing the outer peripheral portion of the wafer on which the organic film and the inorganic film are stacked, (a) showing the state before removal of the organic film and the inorganic film, and (b) showing the removal of the organic film before the removal of the inorganic film. The state, (c) shows the state after removal of the organic film φ and the inorganic film. Fig. 79 is a plan view showing the schematic configuration of a substrate peripheral processing apparatus for the two film laminated wafers of Fig. 78; Fig. 80 is a front view showing the substrate peripheral processing apparatus for the two film laminated wafers. Fig. 81 is a plan view showing a second processing head (gas guiding member) of the substrate peripheral processing apparatus for the two film laminated wafers. Figure 82 is a cross-sectional view showing the second processing head in the circumferential direction (length square image) along the line LXXXII-LXXXII of Figure 81. 103065.doc -148- 1284350 Fig. 83 is a cross-sectional view of the above second processing head (gas guiding member) taken along line LXXXIII-LXXXIII of Fig. 81. Fig. 84 is a view showing the results of experiments using the second processing head similar to that of Fig. 81, and showing the film thickness after the material removal treatment is performed for the distance from the outer end portion of the wafer to the inner side in the radial direction. Fig. 85 is a schematic structural view showing a modification of the substrate peripheral processing apparatus for the above two film laminated wafers. Fig. 86 (a) is a front view showing a schematic configuration of another modification of the substrate peripheral processing apparatus for the two film laminated crystals in the state of the organic film removing step. Fig. 86 (b) is a front view showing the apparatus of Fig. 86 (a) in a state in which the inorganic film removing step is performed. Figure 87 is a longitudinal cross-sectional view showing a modification of the stage structure having a center spacer. Figure 88 is a longitudinal sectional view showing, in an enlarged manner, a boundary portion between a fixed cylinder and a rotating cylinder of the stage structure of Figure 87. Figure 89 (a) is a horizontal sectional view of the shaft assembly of the stage along the line LXXXIXA-LXXXIXA of Figure 88. Figure 89 (b) is a horizontal sectional view of the shaft assembly of the stage along the line LXXXIXB-LXXXIXB of Figure 88. Figure 89 (c) is a horizontal sectional view of the shaft assembly of the stage along the line LXXXIXC-LXXXIXC of Figure 88. Figure 90 is a front cross-sectional view schematically showing a modification of the second processing head. Figure 91 is a plan view of a second processing head (gas guiding member). 103065.doc -149 - 1284350 Figure 92 is a plan view showing the gas guiding member of the extended circumference. Figure 93 is a plan view showing a gas guiding member that shortens the circumference. Fig. 94 (a) to (e) are cross-sectional views showing a modification of the cross-sectional shape of the gas guiding member. Fig. 95 is a plan view showing an embodiment of a gas guiding member which can correspond to a film to be heated. Figure 96 is an enlarged cross-sectional view taken along line 95iXCVI_XCVI of Figure 95. • Fig. 97 is a side cross-sectional view showing the processing portion of the substrate peripheral processing apparatus which can correspond to the orientation flat or groove of the outer circumference of the wafer. Figure 98 is a plan view of the apparatus of Figure 97, (a) showing the state in which the wafer is taken out from the crucible, (b) showing the state in which the wafer is aligned, and (c) showing the state in which the wafer is placed on the processing portion. H 99 (a) (i) is a plan view showing the case where the unnecessary film removal process of the outer peripheral portion of the wafer is performed in the processing unit of Fig. 97 in accordance with the known time. Fig. 100 is a supply spray of the control unit stored in the nozzle position adjusting mechanism. _ The setting information of the mouth position is graphically displayed. Figure 101 is a plan view showing the orientation of the wafer in an exaggerated manner. Fig. 102 is a diagram showing a modification of the setting information of Fig. 100. Figure 103 is a side cross-sectional view showing the processing portion of the apparatus for processing the outer periphery of the wafer in misalignment. Fig. 104 is a plan view of the apparatus of Fig. 103, and (4) shows that the wafer is removed from the sheet, and (b) shows that the wafer is placed in the processing portion. Fig.1〇5(a)~(e) are the processing of the device in the process of the relationship between the steps of Fig. 1〇3 and Fig. 1034 103065.doc -150-1284350. A plan view of the operation of the apparatus of Figs. 103 and 104 is shown in Fig. 106. Fig. 107 is a diagram showing a modification of the operation of the apparatus of Figs. 103 and 104. Fig. 108 is a diagram showing the operation of the apparatus of Figs. Diagram of etch rate and temperature from organic bismuth of ozone. [Description of main components] 10 Stage 10a Support surface 13 Suction hole 14 Suction path 15 Suction groove 16 Annular groove 17 Connection groove 20 Laser heater (radiation heating 21 Laser light source 22 Irradiation unit (irradiation unit) 23 Optical fiber cable (optical transmission system) 30 Plasma nozzle (reactive gas supply source) 36 Discharge nozzle 36a Ejection port 41 Refrigerant chamber (endothermic mechanism) 41C Ring cooling Room (endothermic mechanism) 103065.doc -151- 1284350

41U, 41L Refrigerant chamber (heat absorbing mechanism) 46 Refrigerant passage (heat absorbing mechanism) 47 Annular path 48 Communication path Pe Peltier element (endothermic mechanism) 70 Ozonator (reactive gas supply source) 75 Discharge nozzle 76 Suction nozzle 90 wafer (substrate) 90a wafer outer peripheral portion 92 organic film 93 notch portion of groove, orientation flat surface, etc. inorganic film 92c, 94c film on the outer peripheral portion of the wafer (unnecessary substance) 100 first processing head 110 Center body 111 Center spacer 120 Infrared heater (radiation heater) 121 Infrared lamp (light source) 122 Cluster optical system (illumination unit) 140 Rotary drive motor (rotary drive mechanism) 150 Rotary cylinder 160 Shank type nozzle 162 Introduction part 103065. Doc 152· 1284350 161 Tube portion 161a Temporary retentate space 163 Cover portion 180 Fixing cylinder G1, G2 Packing sheet 200 Second processing head (gas guiding member) 201 Inserting port 202 Guide path 204 Transmissive member 346 Nozzle position adjusting mechanism 350 Control Section 375 Supply nozzle (spray nozzle) P Processed position C Annular surface 103065.doc -153 -

Claims (1)

1284350 X. Patent application garden: = soil material peripheral treatment method' is characterized in that it is a method for removing the surface of the substrate and removing it from contact with the reactive gas; The substrate is brought into contact with the support surface of the carrier, and (4) (4) the outer peripheral portion is heated: in addition, the portion of the outer peripheral portion is closer to the inner side, and the endothermic portion carrying the CT is used to absorb heat, and the heated portion is heated. The reactive gas is supplied to the outer peripheral portion. Spring 2. A substrate peripheral treatment method characterized in that it is a method for removing a non-reactive substance covering a substrate and contacting a reactive gas; and contacting the substrate with the support substrate The support surface is heated by the local radiant heat of the substrate by the heat ray, and the scalpel closer to the inner side of the outer peripheral portion is heated by the heat absorbing mechanism provided on the stage, and the local position is described. The aforementioned reactive gas is supplied. A substrate peripheral processing apparatus characterized in that it is a device for removing an unnecessary substance covering the outer periphery 4 of the substrate from contact with a reactive gas; ^ comprising: (a) a stage having Contacting the support surface of the support substrate; (b) a heater that imparts heat to the treated position at the outer periphery of the substrate supported by the stage; (0 a reactive gas supply mechanism that supplies the aforementioned reactivity The gas is supplied to the processing position; and (d) the heat absorbing mechanism is disposed on the carrier and absorbs heat from the support surface. 4. The substrate peripheral processing device according to claim 3, wherein the heat absorbing mechanism is 103065. Doc 1284350 Cooling the aforementioned stage with a refrigerant. According to the substrate peripheral processing apparatus of claim 4, a refrigerant chamber is formed in the above portion as the heat absorbing mechanism, and the supply path of the refrigerant chamber is connected to the discharge path. 6. Wherein the refrigerant passage is provided with a cold coal passage 1 in the refrigerant passage, wherein the refrigerant passage pack and the annular passage such as the substrate peripheral processing device of claim 4 have a refrigerant passage as the heat absorption mechanism, The substrate peripheral processing apparatus of claim 4 includes a communication path of a plurality of concentric annular paths. 8. The substrate peripheral processing package of claim 3, wherein the heat absorbing side is disposed toward the support surface, wherein the heat absorbing mechanism is packaged in the carrier. 9. The substrate of claim 3 In the peripheral processing device, the heat absorbing mechanism is disposed only in the outer peripheral side portion and the outer side portion of the outer side portion of the stage Minute. In addition to the above-described stage, in addition to the above-mentioned stage 10, the substrate peripheral processing apparatus of claim 9, the center side portion of the chuck mechanism provided with the absorbing substrate on the peripheral side portion is formed to be more than the above-described chuck The partially recessed recessed portion of the mechanism of claim 1. The substrate peripheral processing device of claim 3, wherein the support surface of the stage is slightly smaller than the substrate, and the outer peripheral portion of the substrate is processed to be placed at an extension ratio The support surface is on the outer side in the radial direction. 12. The substrate peripheral processing apparatus of claim 10, wherein said heater is administrated by 103065.doc 1284350, and comprises: a source of heat rays; and illuminating the heat rays from the source to the processed position. Irradiation section. The substrate peripheral processing apparatus according to Item 12, wherein the reactive gas supply means includes the reactive gas to be discharged to the processing position discharge port, and the discharge port is disposed closer to the processing position than the irradiation portion. 14. The substrate outer peripheral processing apparatus according to claim 13, wherein the irradiation unit is disposed on a side of the back surface of the extended surface, and the discharge port is disposed on a side of the back surface of the extended surface or substantially on the extended surface. The substrate peripheral processing device of the moon length item 12, wherein the illuminating portion irradiates the hot ray toward the processed position and is irradiated from a direction which is outside the radius of the support surface. The substrate peripheral processing apparatus according to claim 12, further comprising a moving mechanism that moves the irradiation portion toward the processed position and moves in a plane orthogonal to the support surface. The substrate peripheral processing device of claim 12, wherein the reactive gas supply mechanism includes a discharge port forming member that forms the discharge port, and the discharge port forming member is made of a light transmissive material. The substrate peripheral processing device according to claim 3, wherein the reactive gas supply mechanism includes: a guiding portion that guides the reactive gas to the vicinity of the processing position; and a tubular portion that is connected to the introduction And covering the treated position; the inside of the tubular portion is expanded than the introduction portion, and is a temporary retention space for temporarily retaining the anti-103065.doc 1284350 gas. The substrate peripheral processing apparatus according to claim 18, wherein a cover portion for blocking the light transmissive portion is provided at a base end portion of the tubular portion, and a bundle is irradiated toward the processed position on the outer side of the crucible A radiant heater for heat rays as the aforementioned heater. The base material of the monthly claim 3 is disposed in the outer periphery, wherein the reactive gas i:-mechanism includes a discharge nozzle that discharges the reactive gas to the processed position, and the discharge direction of the discharge nozzle is arranged along the The circumferential direction of the annular surface at the position of the outer peripheral portion of the substrate of the stage. 211. The substrate peripheral processing device according to (4), wherein the step further comprises a suction nozzle disposed to face the position of the garment along the circumferential direction of the garment-like surface so as to face the position of the nozzle. 22. = Substrate peripheral treatment device of claim 21: wherein the heater is in the month of the month, and the heat is applied to the nozzle. The substrate peripheral processing apparatus of claim 21, wherein the stage is rotated from a front end nozzle to a front direction of the suction nozzle. A substrate peripheral processing device in which the aforementioned light radiation is heated. The π-radiation position is on the side of the aforementioned ejection ejection nozzle. The deviation between the horns is 25. The base of the request item 3 + the stage body, ... J wherein the aforementioned stage comprises: the heat absorbing machine has a refrigerant chamber or a refrigerant path as the front load, which is set to be protruded And being stored in a central portion of the main body; 103065.doc l28435〇 further comprising: a fixing cylinder provided with an opening of the refrigerant; and a suspected rotation, which is rotatably inserted through the fixed cylinder, and The base body is coaxially coupled; and a twisting drive mechanism that rotates the rotating drum; forming an annular path connected to the opening on the inner circumferential surface of the fixed cylinder and the outer peripheral surface of the rotating cylinder An axial direction path extending in the axial direction is formed in the cylinder, and one end of the direction path is connected to the annular path, and the other end is connected to the refrigerant chamber or the refrigerant path. The substrate peripheral processing apparatus of the item 25, wherein the annular path is formed on both sides of the inner circumferential surface of the fixed cylinder or the outer circumferential surface of the rotating cylinder, and the sealing groove is accommodated in each sealing groove. A cross-sectional gate-shaped packing sheet that is opened in the aforementioned annular path. 27. The substrate of claim 3, wherein the reactive gas supply mechanism comprises a gas guiding member, the gas guiding member comprising: an insertion port that is insertably inserted into the substrate And the guiding path, which is connected to the bottom end of the inserted population, and surrounds the outer peripheral portion of the substrate and extends in the circumferential direction of the substrate; the extension of the guiding path is 6 μ, s redundant meaning Through the month, the reactive gas is described. 28. The peripheral processing of the substrate of claim 27, wherein the heater includes an inner portion facing the guiding path, an illuminating portion of the light, a light, and a light, in the gas guiding member. In the face of the pre-existing 2|way, the guide path is embedded with a light-transmitting member that transmits the heat rays of the irradiating portion of the 103065.doc 1284350. 29) The substrate peripheral processing device of claim 3 An organic film and an inorganic film in which an unnecessary substance is stacked on the outer peripheral portion of the substrate, wherein the reactive gas system is reacted with the organic film, and the reactive gas supply means is for removing the organic film, and further includes Other reactive gas supply means for supplying the other reactive gas which reacts with the inorganic film to the outer peripheral portion of the substrate on the stage. & 30. Processing the substrate on the outer periphery of the substrate of claim 3, # The substrate is a circular wafer in which a portion of the outer peripheral portion is formed with a notch portion such as a groove or an orientation flat surface, and the reactive gas supply mechanism includes a crucible ^ orthogonal to the first-axis sliding reactive gas supply nozzle, the wafer is centered on the stage and rotated around the axis, and "the carrier is centered by the rotation, along with + ^ , the axis adjusts the position of the above-mentioned 徂 to the mouth sound, in the above-mentioned wafer, ,, ' 勒 昧 + , 似 , , , 四 四 四 四 四 四 四 四 四 四 四 四 四 四 四 四 四 四 四 四 四 四 四 四 四 四 四 四 供给 供给The radius is substantially equidistant from the center axis of the wafer and the notch portion of the wafer is traversed by the first axis. The way the tip end of the front nozzle is always facing the crossing point is:::supply The x-axis slides the aforementioned supply nozzle. ^ ' along the foregoing paragraph / 31. The substrate peripheral processing apparatus of claim 3, the wafer, the substrate is circular, I03065.doc 1284350, wherein the reactive gas supply mechanism is included along the The central axis of the stage is orthogonal to the skirt. The one-axis sliding reactive gas supply nozzle, the stage absorbing and holding the wafer, and rotating around the central axis, the step-by-step calculation unit is calculated The supply nozzle of the processing fluid is adjusted by the position of the outer peripheral portion of the wafer and the time at which the first axis of the central axis of the central axis passes, and the supply nozzle of the processing fluid is adjusted by the position of the first axis. The aforementioned traversing point is directed to the supply of the aforementioned processing fluid. 103065.doc