JP2007019066A - Method and device for treating outer periphery of base material - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide an apparatus for treating an outer periphery of a base material that increases the utilization efficiency and reaction efficiency of reactive gas when bringing the reactive gas into contact with a unnecessary object covered at the outer-periphery section of a base material for removal, and can reduce the amount of required gas. <P>SOLUTION: In the apparatus for treating the outer periphery of the base material, a supply path 42 of reactive gas, such as ozone, is formed, an introduction section 62 of a ladle-type nozzle 60 ranges with the supply path 42, and a cylinder section 61 of the ladle-type nozzle 60 is provided at the tip of the introduction section 62. The cylinder section 61 is arranged so as to cover a position to be treated in the base material W. The inside of the cylinder section 61 is expanded as compared with the introduction section 62 and acts as a temporary residence space for allowing the reactive gas to stay temporarily. Preferably, a relief port, such as a cutout, is provided at the lower end of the cylinder section 61. <P>COPYRIGHT: (C)2007,JPO&INPIT

Description

  The present invention relates to a method and an apparatus for removing unnecessary substances such as an organic film coated on the outer periphery of a base material such as a semiconductor wafer or a liquid crystal display substrate.

  As means for coating an insulating film, an organic resist, polyimide, or the like on a substrate such as a semiconductor wafer or a glass substrate for liquid crystal display, methods such as coating by spin coating, thin film deposition by CVD, and PVD are known. According to these methods, the film is also applied to the outer peripheral part of the base material. However, the film on the outer peripheral part may have a different film quality from the central part, or may break during transportation and cause particles. There is.

Various techniques have been proposed to remove such unnecessary films on the outer periphery.
For example, in Patent Document 1 and Japanese Patent Application Laid-Open No. 2003-264168, a gas supply nozzle is arranged perpendicularly to the front side surface of the outer peripheral portion of the wafer, and a reactive gas composed of ozone and hydrofluoric acid is supplied from the gas supply nozzle. It is described that the unnecessary film on the outer peripheral portion is removed by spraying on the outer peripheral portion of the wafer.
Japanese Patent Application Laid-Open No. 2004-96086 discloses that the outer periphery of a wafer is inserted into a U-shaped member and oxygen radicals are directed from the ceiling inside the U-shaped member toward the outer periphery of the wafer. In addition to spraying, it is described that suction is performed from a suction port provided on the inner side of the U-shaped member.
JP 2003-264168 A JP 2004-96086 A

  In general, a conventional gas supply nozzle is narrowed in a straw shape with a uniform diameter from the proximal end to the distal end. For this reason, since the reactive gas is diffused and discharged immediately upon hitting the wafer, the reaction time given to the active species is short, and the utilization efficiency and reaction efficiency of the active species are poor. The required amount of reactive gas is also increased.

The present invention is an apparatus for removing unnecessary substances coated on the outer periphery of a substrate,
An introduction part that guides a reactive gas for removing unnecessary substances to the vicinity of the position to be treated on the outer peripheral part of the substrate;
A tube portion that is continuous with the introduction portion and covers the processing position,
The inside of the cylinder part is a temporary retention space that is expanded from the introduction part and temporarily retains the reactive gas.
Thereby, the utilization efficiency and reaction efficiency of the reactive gas can be increased, and the required gas amount can be reduced.

A relief port that continues to the temporary retention space is formed between the cylindrical portion itself or the cylindrical portion and the outer edge of the base material at the processing position, and gas outflow from the temporary retention space is promoted through the relief port. It is preferable to be adapted.
As a result, treated gases and reaction by-products with reduced reactivity do not stay in the temporary residence space for a long time, and a new reactive gas can be supplied to the temporary residence space as needed. Can be improved.

For example, the tip of the cylindrical portion is opened facing the processing position.
In this case, it is preferable that a notch serving as the escape port is formed at a location that should correspond to the radially outer side of the base material at the tip edge of the cylindrical portion.
As a result, the treated gas and reaction by-products can be quickly discharged from the temporary residence space through the notch, and new reactive gas can be supplied to the temporary residence space as needed, thereby improving the reaction efficiency more reliably. be able to.

The cylindrical portion is disposed so as to pass through the processing position, and a notch into which the outer peripheral portion of the base material is inserted is formed on the peripheral side portion corresponding to the processing position of the cylindrical portion. The introduction part may be connected to the cylinder part on the more proximal side.
In this case, the inside of the cylindrical portion on the proximal end side from the cut constitutes the temporary stay space, and the inner peripheral surface of the portion of the cylindrical portion that remains without being cut in the portion corresponding to the processing position, The escape port is configured in cooperation with the outer edge of the wafer at the processing position.

It is preferable that an exhaust path is directly connected to the cylindrical portion on the tip side from the notch.
As a result, the treated gas and reaction by-products can be reliably guided to the exhaust path, and even if particles are generated, forced exhaust can be surely performed, and reaction control can be easily performed.

The base end portion of the cylindrical portion is provided with a light-transmitting lid portion that closes it,
It is preferable that a heat ray irradiating part is disposed outside the lid part toward the processing position.
Thus, when the unnecessary film and the reactive gas undergo an endothermic reaction, the reaction can be surely promoted.

  According to the present invention, the reactive gas can be temporarily retained on the outer periphery of the wafer. Thereby, the utilization efficiency and reaction efficiency of the reactive gas can be increased, and the required gas amount can be reduced.

Hereinafter, embodiments of the present invention will be described with reference to the drawings.
1 to 7 show a first embodiment of the present invention. As shown by the phantom line in FIG. 7, the processing target base material of the base material outer periphery processing apparatus is, for example, a semiconductor wafer W and has a disk shape. As shown in FIG. 6, the upper surface (front side surface) of the wafer W is coated with an organic film f such as a photoresist. The organic film f extends to the outer periphery of the wafer W. The organic film fa on the outer periphery of the wafer W is an unnecessary object to be removed.

As shown in FIG. 7, the base material outer periphery processing apparatus for removing unnecessary materials includes a reactive gas supply source 41, a stage 10, a processing head 20, and a radiation light source 31.
An ozonizer is used as the reactive gas supply source 41. The ozonizer 41 generates ozone (O ₃ ) as a reactive gas suitable for removing the organic film fa such as a photoresist. An atmospheric pressure plasma processing apparatus may be used instead of the ozonizer 41 as a reactive gas supply source. When, for example, oxygen is supplied to a discharge space of approximately atmospheric pressure formed between the electrodes of the atmospheric pressure plasma processing apparatus, oxygen-based reactive gas such as oxygen radicals can be obtained.

The stage 10 has a horizontal disk shape, and rotates around a central vertical axis 11. As shown by the arrows in FIG. 7, the rotation direction is clockwise in a plan view, but may be reverse.
The wafer W is set horizontally on the upper surface (wafer W supporting surface) of the stage 10 with its center aligned. The stage 10 incorporates a vacuum or electrostatic chuck mechanism that attracts the wafer W. The outer peripheral portion of the set wafer W protrudes slightly from the outer edge of the stage 10. The protrusion amount of the outer peripheral portion of the wafer W is, for example, about 3 to 5 mm.

Although not shown in detail, the stage 10 incorporates heat absorption means for absorbing heat from the surface in contact with the wafer W to cool the wafer W. For example, the inside of the stage 10 is hollow, and a cooling medium such as water or air is fed into the cavity. As the heat absorbing means, concentric multiple circular, radial or spiral cooling medium flow passages may be formed in the stage 10 in place of the cavity. Alternatively, a Peltier element may be embedded in the stage 10.
As the material of the upper plate (the plate on the side on which the wafer W is abutted) of the stage 10, a material having good thermal conductivity (for example, aluminum) is used.

As shown in FIG. 7, the processing head 20 is disposed on one side of the stage 10. The processing head 20 is capable of moving back and forth between a processing position (solid line in FIG. 7) advanced toward the stage 10 and a retracted position (virtual line in FIG. 7) away from the stage 10, and an apparatus frame (not shown). ) Is supported.
The number of processing heads 20 is not limited to one, and a plurality of processing heads 20 may be set apart in the circumferential direction of the stage 10.

As shown in FIGS. 1 to 4, the processing head 20 includes a head main body 21 and a handle type nozzle 60 provided on the head main body 21.
The head main body 21 has a substantially rectangular parallelepiped shape. As shown in FIGS. 1 and 2, a radiation irradiation unit 33 (heat ray irradiation unit) is provided on the upper portion of the head body 21.

The irradiation unit 33 is connected to the radiation light source 31 via the optical fiber cable 32. The radiant light source 31 is disposed away from the head body 21. A laser light source is used as the radiation light source 31. The laser light source 31 emits, for example, an LD (semiconductor) laser beam L30 having an emission wavelength of 808 nm to 940 nm. The laser light source 31 is not limited to the LD, and various types such as YAG and excimer may be used. An optical fiber cable 32 extends from the emission part of the laser light source 31. The tip of the optical fiber cable 32 is optically connected to the irradiation unit 33 of the head body 21. The irradiation unit 33 accommodates an optical system such as a lens that converges and irradiates the laser light L30 from the optical fiber cable 32. The irradiation direction of the irradiation unit 33 is directed directly along the central axis of the head main body 21.
Infrared rays may be used instead of lasers as radiation rays.

  As shown in FIGS. 1 to 4, an opening 20 a facing the stage 10 is formed in the lower portion of the head main body 21. An irradiation window at the lower end of the irradiation unit 33 faces the ceiling surface of the opening 20a.

On the wall of the lower portion of the head main body 21, one gas supply path 42 and three gas exhaust paths 51, 52, 53 are formed.
As shown in FIG. 2, the base end (upstream end) of the gas supply path 42 is connected to the ozonizer 41. As shown in FIGS. 2 and 3, the distal end (downstream end) of the gas supply path 42 extends toward the inner surface on one side of the opening 20 a of the head body 21.

  As shown in FIGS. 2 and 3, the suction end of one exhaust passage 51 is opened on the inner surface of the opening 20 a of the head body 21 opposite to the gas supply passage 42. The height of the suction end of the exhaust passage 51 is set to be slightly higher than the upper surface of the stage 10. The exhaust path 51 is disposed on the downstream side of the gas supply path 42, and thus the handle rod type nozzle 60, along the rotation direction of the wafer W (for example, clockwise in plan view).

  As shown in FIG. 2, the suction end of the other exhaust passage 52 is opened at the center of the bottom surface of the opening 20 a of the head body 21. The suction end of the exhaust passage 52 is disposed directly below the irradiation unit 33 and the short cylinder portion 61 described later.

As shown in FIGS. 1 and 4, the suction end of the remaining one exhaust passage 53 is opened on the inner surface on the back side of the opening 20 a of the head body 21. The suction end of the exhaust passage 53 is set to be substantially the same height as the upper surface of the stage 10.
The downstream ends of these exhaust passages 51, 52, 53 are connected to exhaust means (not shown) such as an exhaust pump.

  As shown in FIGS. 2 and 3, the handle type nozzle 60 is provided inside the opening 20 a of the head body 21. As shown in FIG. 5, the handle rod type nozzle 60 includes a short cylindrical short tube portion 61 and a thin straight tubular introduction portion 62. The short cylinder portion 61 and the introduction portion 62 are made of an ozone-resistant transparent material such as quartz.

As shown in FIGS. 2 and 3, the introduction part 62 extends horizontally. The proximal end portion of the introduction portion 62 is embedded and supported in the head body 21 and is connected to the distal end portion of the gas supply path 42. The inside of the introduction part 62 constitutes an introduction path 62a for introducing ozone (reactive gas).
For example, the outer diameter of the inlet portion 62 is 1 mm to 5 mm, the flow path cross-sectional area of the introduction path 62a is about 0.79mm ² ~19.6mm ^2, length is 20Mm～35mm.

The leading end portion of the introducing portion 62 extends into the opening 20a of the head body 21, and the short cylinder portion 61 is connected thereto.
The short cylinder portion 61 is disposed at the center of the opening 20 a of the head body 21. The short cylinder portion 61 has a covered cylindrical shape with a bottom surface opening with the axis line oriented vertically. The diameter of the short cylinder part 61 is sufficiently larger than the diameter of the introduction part 62. The axis of the short cylinder portion 61 is along the central axis of the head body 21 and coincides with the irradiation axis of the irradiation unit 33.
For example, the outer diameter of the short cylinder part 61 is 5 mm to 20 mm, and the height is 10 mm to 20 mm.

A lid portion 63 for closing the short cylinder portion 61 is integrally provided at the upper end (base end) of the short cylinder portion 61. The lid portion 63 is disposed directly opposite the irradiation window of the irradiation unit 33. As described above, the entire short cylinder 61 including the lid 63 is made of a translucent material such as quartz glass, but at least the lid 63 only needs to be translucent. As the translucent material, a highly transparent resin such as soda glass or other general-purpose glass, polycarbonate, or acrylic may be used in addition to quartz glass.
The thickness of the lid 63 is preferably 0.1 mm to 3 mm.

The introduction portion 62 is connected to the upper portion of the peripheral side portion of the short cylinder portion 61, and the introduction path 62 a inside the introduction portion 62 communicates with the internal space 61 a of the short cylinder portion 61. The downstream end of the introduction path 62 a is a communication port 60 a with the internal space 61 a of the short cylinder portion 61. The flow passage cross-sectional area of the internal space 61a of the short cylindrical portion 61 is sufficiently larger than the flow passage cross-sectional area of the introduction passage 62a and hence the communication port 60a.
For example, the flow path cross-sectional area of the communication port 60a, compared between about 0.79mm ² ~19.6mm ^2, flow path cross-sectional area of the internal space 61a of the short tube portion ^61, 19.6mm ^{2 ~314mm} 2 It is.

  Ozone (reactive gas) that has passed through the introduction path 62a enters the internal space 61a of the short cylindrical portion 61 from the communication port 60a, expands, and temporarily stays there. The internal space 61a of the short cylinder portion 61 is a temporary residence space for ozone (reactive gas).

  As shown in FIG.1 and FIG.2, the lower surface (front-end | tip) of the short cylinder part 61 is opened. With the processing head 20 in the processing position, the outer peripheral portion (processing position) of the wafer W on the stage 10 is positioned immediately below the lower edge of the short cylindrical portion 61, and the short cylindrical portion 61 is at the processing position. It comes to cover. The gap between the lower end edge of the short cylinder portion 61 and the outer peripheral portion of the wafer W is set to be extremely small, for example, about 0.5 mm. The temporary stay space 61a inside the short cylindrical portion 61 faces the outer peripheral portion (processing position) of the wafer W through this minimal gap.

  As shown in FIG. 3, the short cylindrical portion 61 at the processing position is arranged so as to slightly protrude from the outer edge of the wafer W to the outside of the radius of the wafer W. Thereby, the temporary residence space 61a inside the short cylinder part 61 communicates with the outside via the space between the lower end edge of the protruding part of the short cylinder part 61 and the outer peripheral edge of the wafer W. A space between the lower end edge of the protruding portion of the short cylinder portion 61 and the outer peripheral edge of the wafer W serves as an escape port 64 for the staying gas in the temporary staying space 61a.

A method of removing the film fa on the outer peripheral portion of the back surface of the wafer W by the wafer outer peripheral processing apparatus having the above configuration will be described.
A wafer W to be processed is placed on the upper surface of the stage 10 by a transfer robot or the like so as to be centered and sucked and chucked. Next, the processing head 20 is advanced from the retracted position and set at the processing position. As a result, as shown in FIG. 6, the outer peripheral portion of the wafer W is inserted into the opening 20 a of the head main body 21, and is disposed immediately below the short cylinder portion 61.

  Next, the laser light source 31 is turned on, and the laser beam L30 is converged and irradiated from the irradiation unit 33 toward the outer periphery of the wafer W just below. Thereby, the film fa on the outer peripheral portion of the wafer W can be radiantly heated in a spot shape (locally). Although the cover part 63 of the short cylinder part 61 is interposed in the middle of the optical path, since the cover part 63 is highly translucent, the amount of light is hardly reduced and the heating efficiency can be maintained.

  In parallel with the laser heating, ozone is sent from the ozonizer 41 to the gas supply path 42. This ozone is guided to the introduction path 62a of the introduction part 62 of the handle rod type nozzle 60, and is introduced into the temporary residence space 61a inside the short cylinder part 61 from the communication port 60a. Since the temporary residence space 61a is larger than the introduction path 62a and the communication port 60a, ozone diffuses and temporarily stays inside the temporary residence space 61a. As a result, it is possible to extend the time for ozone to come into contact with the locally heated portion on the outer periphery of the wafer W, and to ensure a sufficient reaction time. Accordingly, the film fa at the locally heated portion can be reliably etched and removed, and the processing rate can be improved. In addition, the utilization of ozone can be sufficiently increased, waste can be eliminated, and the required gas amount can be reduced.

  The short cylinder portion 61 protrudes slightly from the outer peripheral edge of the wafer W, and a space between the protruding portion and the outer peripheral edge of the wafer W is an escape port 64 from the inside 61 a of the short cylinder portion 61. Therefore, the gas stay in the inner portion 61a of the short cylinder portion 61 is temporary, and the gas with reduced activity and the reaction by-products (particles, etc.) that have been processed can be quickly discharged from the escape port, and are always fresh. It is possible to maintain high reaction efficiency by supplying fresh ozone to the temporary residence space 61a.

  By adjusting the suction exhaust amount of the three exhaust paths 51, 52, 53, it is possible to control the leak from the escape port 64 and to control the gas flow in the opening 20a after the leak. By providing the three exhaust paths 51, 52 and 53, even if particles are diffused, they can be reliably sucked and exhausted.

When the stage 10 is rotated in parallel, the film fa on the outer peripheral portion of the wafer W can be removed over the entire periphery. In addition, by cooling the inner part of the outer periphery of the wafer W by the cooling / heat-absorbing means in the stage 10, it is possible to prevent the temperature of the inner part of the wafer W from rising due to heat from laser irradiation. It is possible to prevent the inner portion film f from being damaged.
After the removal process is completed, the processing head 20 is retracted, the chuck of the stage 10 is released, and the wafer W is picked up from the stage 10.

  As shown in FIGS. 8A to 8C, the position of the short cylinder portion 61 at the processing position is adjusted in the radial direction of the stage 10, and the amount of protrusion of the short cylinder portion 61 from the outer peripheral edge of the wafer W is adjusted. As a result, the processing width of the film fa to be removed (the hatched portion in the figure) can be adjusted.

  The inventor conducted an experiment on the light transmittance of the lid 63 using the experimental apparatus shown in FIG. The quartz glass plate G is imitated by the lid 63, the laser light L30 from the laser irradiation unit 33 is applied to the quartz glass plate G, the laser power measuring device D is placed on the back side, and the power of the transmitted laser is measured, and the attenuation factor Was calculated. The output of the laser irradiation unit 33 was switched in several stages, and the laser power at each stage was measured. Two quartz glass plates G having different thicknesses were prepared, and each glass plate G was measured in the same manner.

上記表の通り、照射ユニット３３の出力及びガラス板厚に拘わらず、減衰率は４％未満であった。
したがって、照射ユニット３３からの光路に柄杓型ノズル６０の蓋部６３が介在されていても９６％以上のレーザ光Ｌ３０が蓋部６３を透過でき、ウェハＷの外周部の加熱効率はほとんど落ちないことが判明した。 The results are as follows.

As shown in the above table, the attenuation rate was less than 4% regardless of the output of the irradiation unit 33 and the glass plate thickness.
Therefore, even if the cover part 63 of the handle rod-shaped nozzle 60 is interposed in the optical path from the irradiation unit 33, 96% or more of the laser light L30 can pass through the cover part 63, and the heating efficiency of the outer peripheral part of the wafer W hardly decreases. It has been found.

  On the other hand, even if all of the attenuation of the laser energy is absorbed by the lid 63, the absorption rate is less than 4%, so that heat is not generated much. And it can fully cool with the ozone gas which distribute | circulates the inside of the handle rod type nozzle 60. FIG. Therefore, the handle rod-shaped nozzle 60 including the lid portion 63 is hardly heated, and hardly any heat resistance is required.

Next, another embodiment of the present invention will be described.
FIG. 10 shows a modification of the handle rod type nozzle 60. In this modification, a notch 61 b is formed as a relief opening at the lower end edge of the short cylinder portion 61 of the handle rod type nozzle 60. As shown in FIG. 11, the notch 61 b is disposed on the side opposite to the side facing the stage 10 in the circumferential direction of the short cylinder portion 61 (a location corresponding to the radially outer side of the wafer W).
The notch 61b has a semicircular shape with a radius of about 2 mm. The shape and size of the notch 61b are not limited to the above and can be set as appropriate.

  According to this modification, the treated gas and reaction by-products in the temporary residence space 61a can be surely released from the notch 61b, and fresh ozone can be reliably supplied to the temporary residence space 61a, resulting in high reaction efficiency. You can definitely get it.

  Since the short cylinder portion 61 itself of the handle rod type nozzle 60 has an escape port 61 b, the short cylinder portion 61 is protruded from the outer edge of the wafer W to form an escape port 64 between the short cylinder portion 61 and the outer edge of the wafer W. There is no need, as shown in FIG. 8 (c), even if the outer edge of the short cylinder portion 61 and the wafer W are matched, the treated gas and reaction by-products can be reliably discharged from the temporary residence space 61a. The settable range of the processing width of the film fa to be removed can be widened.

12 and 13 show a modification of the exhaust system of the substrate outer periphery processing apparatus.
The exhaust nozzles 51A, 52A, and 53A may be provided in the opening 20a of the processing head 20. As shown by the imaginary line in FIG. 13, the exhaust nozzle 51 </ b> A extends in a substantially tangential direction of the wafer W on the stage 10 from the exhaust path 51 on the side of the head body 21 toward the center of the opening 20 a. The front end opening of the exhaust nozzle 51A is arranged so as to be slightly away from the downstream side of the short cylinder part 61 along the rotation direction of the wafer W (for example, clockwise in plan view) and to face the side part of the short cylinder part 61. Yes. The exhaust nozzle 51A is disposed slightly above the wafer W, is slightly inclined downward, and the opening at the tip is directed obliquely downward.
Reaction by-products such as particles generated on the wafer W immediately below the short cylinder portion 61 flow toward the exhaust nozzle 51 </ b> A as the wafer W rotates. By sucking and exhausting this with the exhaust nozzle 51A, it is possible to reliably prevent particles from being deposited on the wafer W.

As shown by phantom lines in FIGS. 12 and 13, the exhaust nozzle 52 </ b> A extends vertically upward from the exhaust passage 52 at the bottom of the head body 21. The opening (upper end) of the exhaust nozzle 52 </ b> A is disposed so as to face slightly below the lower end opening of the short cylinder portion 61. The outer peripheral portion of the wafer W is inserted between the short cylinder portion 61 and the exhaust nozzle 52A.
As a result, reaction by-products such as particles generated on the wafer W directly under the short cylinder portion 61 can be sucked down and exhausted by the exhaust nozzle 52A, and the particles are reliably deposited on the wafer W. Can be prevented. In addition, it is possible to control the reactive gas such as ozone from the short cylinder portion 61 to flow from the upper edge to the lower edge of the outer peripheral portion of the wafer W, and not only the upper edge but also the outer edge of the wafer W. The reactive gas can also be brought into contact with the lower edge. Thus, the unnecessary film fa on the entire outer peripheral portion of the wafer W can be reliably removed.

As shown by the phantom line in FIG. 12, the exhaust nozzle 53A extends from the exhaust path 53 on the back side surface of the opening 20a of the head body 21 toward the center of the opening 20a in the radial inner direction of the wafer W. The front end opening of the exhaust nozzle 53 </ b> A is disposed so as to be slightly away from the short cylinder portion 61 (outside the radius of the wafer W) and to face the short cylinder portion 61. The upper and lower positions of the exhaust nozzle 53 </ b> A are disposed at substantially the same height as the lower end portion of the short cylinder portion 61 and the wafer W.
As a result, particles generated on the wafer W immediately below the short cylinder portion 61 can be quickly drawn out of the radius from the wafer W by the exhaust nozzle 53A, and sucked / exhausted, and particles are deposited on the wafer W. Can be reliably prevented, and even if particles are diffused, they can be reliably sucked and exhausted.

  Only one of the three exhaust nozzles 51A, 52A, 53A may be selectively attached, two may be selectively attached, or all three may be attached. Two or three may be attached, and one of them may be selected to perform suction exhaust. Two or three of them may be sucked and exhausted simultaneously.

  14 to 17 show a second embodiment. As shown in FIGS. 14 and 15, in the second embodiment, a long cylindrical nozzle 70 (cylindrical portion) is used instead of the handle rod type nozzle 60. Further, instead of the quartz introduction part 62 integrated with the handle rod type nozzle 60, an introduction part 79 made of an ozone-resistant resin (for example, polyethylene terephthalate) is used. The long cylindrical nozzle 70 and the introduction part 79 are separate from each other.

As shown in FIG. 16, the long cylinder nozzle 70 is made of an ozone-resistant transparent material such as quartz, like the handle rod nozzle 60, and has a covered cylindrical shape with a bottom opening longer than the short cylinder portion 61. ing.
For example, the length of the long cylindrical nozzle 70 is 40 mm to 80 mm, the outer diameter is 5 mm to 20 mm, and the flow path cross-sectional area of the internal space is 19.6 mm ^{2 to} 314 mm ² .

The upper end (base end) of the long cylindrical nozzle 70 is integrally provided with a transparent lid 73 that closes the long cylindrical nozzle 70. As shown in FIGS. 14 and 15, the lid portion 73 is disposed directly opposite the irradiation window of the irradiation unit 33. The irradiation unit 33 converges and irradiates the laser to the outer peripheral portion (processing position) of the wafer W on the stage 10 through the lid portion 73.
As for the thickness of the cover part 73, 0.1 mm-3 mm are preferable.

  The long cylinder type nozzle 70 is disposed in the center of the opening 20a of the head body 21 with the axis line oriented vertically. The long cylindrical nozzle 70 is disposed so as to penetrate the outer peripheral portion (processing position) of the wafer W on the stage 10, and intersects the outer peripheral portion of the wafer W at the intermediate portion. An incision 74 is formed in the peripheral side portion of the crossing portion (the portion corresponding to the processing position) of the long cylindrical nozzle 70 with the outer peripheral portion of the wafer W. The notch 74 extends substantially semicircularly in the circumferential direction of the long cylindrical nozzle 70. The upper and lower thickness of the notch 74 is slightly larger than that of the wafer W so that the outer peripheral portion of the wafer W can be inserted.

  For example, the notch 74 is provided at a position of about 10 mm to 30 mm from the upper end of the long cylindrical nozzle 70. The thickness (vertical dimension) of the notch 74 is about 2 mm to 5 mm. The center angle of the cut 74 is preferably 240 ° to 330 °.

  An introduction portion 79 is connected to a portion 71 (base end side) above the notch 74 of the long cylindrical nozzle 70. The downstream end of the introduction path 79a in the introduction portion 79 communicates with the inside of the upper nozzle portion 71 to form a communication port 70a. The inside of the upper nozzle portion 71 of the long cylindrical nozzle 70 constitutes a temporary retention space 71a.

  As shown in FIG. 17, when the wafer W is inserted into the notch 74, the temporary inside of the upper nozzle portion 71 is between the outer edge of the wafer W and the portion 75 left by the notch 74 of the long cylindrical nozzle 70. An escape port 75a from the staying space 71a is formed.

  The inside of the portion 72 below the notch 74 of the long cylindrical nozzle 70 is an escape path that continues to the escape port 75a. As shown in FIG. 15, the exhaust path 52 is directly connected to the lower end of the long cylindrical nozzle 70.

  According to the second embodiment, when the wafer W to be processed is set on the upper surface of the stage 10 and the processing head 20 is advanced to the processing position, the outer peripheral portion of the wafer W is inserted into the cut 74 of the long cylindrical nozzle 70. It is done. As a result, the inside of the long cylindrical nozzle 70 is partitioned vertically by sandwiching the wafer W, and the internal spaces of the upper and lower nozzle portions 71 and 72 communicate with each other via the escape port 75a.

  Next, the outer peripheral portion of the wafer W is converged and irradiated with a laser from the irradiation unit 33 and locally heated, and ozone of the ozonizer 41 is sent from the communication port 70 a to the temporary residence space 71 a in the upper nozzle portion 71. Thereby, the film fa on the outer peripheral portion of the wafer W can be efficiently removed as in the first embodiment. Since the gap between the edge of the notch 74 and the wafer W is extremely narrow and the lower nozzle portion 72 is sucked by the exhaust means, it is possible to reliably prevent gas from leaking between the edge of the notch 74 and the wafer W. The reaction can be controlled efficiently. Then, the treated gas and reaction by-products can be forcibly discharged from the escape port 75 a to the lower nozzle portion 72 and forcedly exhausted from the exhaust path 52. Even if particles are generated, forced exhaust can be performed from the exhaust path 52.

The present invention is not limited to the above embodiment.
For example, the reactive gas is not limited to ozone, and various gases can be selected according to the components of the unnecessary film to be removed.
Instead of the laser heater, an infrared irradiator may be used as the radiant heater.

  The present invention can be applied to a process of removing unnecessary films such as organic substances adhering to the outer peripheral portion in the manufacture of a semiconductor wafer W, for example.

It is a longitudinal cross-sectional view which shows the wafer outer periphery processing apparatus which concerns on 1st Embodiment of this invention along the II line | wire of FIG. It is a longitudinal cross-sectional view of the processing head of the said wafer outer periphery processing apparatus which follows the II-II line | wire of FIG. It is a plane sectional view of the above-mentioned wafer perimeter processing device which meets the III-III line of Drawing 1. It is a plane sectional view of the above-mentioned wafer perimeter processing device which meets an IV-IV line of FIG. It is a perspective view of the handle rod type nozzle of the above-mentioned wafer perimeter processing device. It is explanatory sectional drawing which expands and shows the mode of the film | membrane removal process of the wafer outer peripheral part by the said wafer outer periphery processing apparatus. It is a top view of the said wafer outer periphery processing apparatus. It is a description top view which shows the example of a setting of the arrangement | positioning relationship between the short cylinder part of the said handle type | mold nozzle, and a wafer outer edge. It is a commentary front view of the experimental device used for the translucency measurement experiment of the handle type nozzle. It is a perspective view which shows the modification of the said handle-type nozzle. FIG. 11 is an explanatory cross-sectional view showing, in an enlarged manner, a state of film removal processing on a wafer outer peripheral portion by a wafer outer peripheral processing apparatus using a handle-shaped nozzle according to a modification of FIG. It is a longitudinal cross-sectional view which shows the modification of the exhaust system of the said wafer outer periphery processing apparatus along the XII-XII line | wire of FIG. It is a longitudinal cross-sectional view of the processing head of the said wafer outer periphery processing apparatus which follows the XIII-XIII line of FIG. It is a longitudinal cross-sectional view which shows the wafer outer periphery processing apparatus which concerns on 2nd Embodiment of this invention along the XIV-XIV line | wire of FIG. It is a longitudinal cross-sectional view of the processing head of the wafer outer periphery processing apparatus which concerns on 2nd Embodiment along the XV-XV line | wire of FIG. It is a perspective view of the long cylinder type nozzle of the wafer perimeter processing device concerning a 2nd embodiment. It is explanatory comment sectional drawing which expands and shows the mode of the film | membrane removal process of the wafer outer peripheral part by the wafer outer peripheral processing apparatus which concerns on 2nd Embodiment.

Explanation of symbols

W Wafer W
f Organic film fa Organic film 10 at the outer periphery Stage 11 Vertical axis 20 Processing head 20a Opening 21 Head body 31 Laser light source (radiation heating source)
32 Optical fiber 33 Irradiation unit (irradiation part)
L30 Laser light (heat ray)
41 Ozonizer (reactive gas supply source)
42 Gas supply passage 51 Side exhaust passage 52 Lower exhaust passage 53 Back exhaust passage 60 Handle rod type nozzle 61 Short tube portion (tube portion)
62 Introduction part 62a Introduction path 63 Lid part 61a Internal space of short cylinder part (temporary residence space)
60a Communication port 61b Notch (Relief port)
64 Escape port 70 Long cylindrical nozzle (cylinder part)
73 Lid portion 70a Communication port 74 Cut 71 The upper portion of the long cylindrical nozzle (the tube on the base end side from the cut)
71a Temporary staying space 72 A part below the cut of the long cylindrical nozzle (cylinder part on the tip side from the cut)
75 Portion 75a left by the cut of the long cylinder type nozzle Escape port 79 Introduction part 79a Introduction path

Claims (6)

An apparatus for removing unnecessary substances coated on the outer periphery of a substrate,
An introduction part that guides a reactive gas for removing unnecessary substances to the vicinity of the position to be treated on the outer peripheral part of the substrate;
A tube portion that is continuous with the introduction portion and covers the processing position,
The base material outer periphery processing apparatus characterized by the inside of the said cylinder part becoming the temporary residence space which expands from the said introduction part, and retains the said reactive gas temporarily.   The base material outer periphery processing apparatus according to claim 1, wherein a tip of the cylindrical portion is opened facing the processing position.   The base material outer periphery processing apparatus according to claim 2, wherein a notch is formed at a position that should correspond to a radius outside the base material at a tip edge of the cylindrical portion.   The cylindrical portion is disposed so as to pass through the processing position, and a notch into which the outer peripheral portion of the base material is inserted is formed on the peripheral side portion corresponding to the processing position of the cylindrical portion. The base material outer periphery processing apparatus according to claim 1, wherein the introduction portion is connected to a cylindrical portion closer to the base end.   The base material outer periphery processing apparatus according to claim 4, wherein an exhaust path is directly connected to a cylindrical portion on a tip side from the notch. The base end portion of the cylindrical portion is provided with a light-transmitting lid portion that closes it,
The base material outer periphery processing apparatus according to claim 2, wherein a heat ray irradiating part is arranged outside the lid part toward the processing position.

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