JP2020202268A - Substrate processing apparatus - Google Patents

Substrate processing apparatus Download PDF

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JP2020202268A
JP2020202268A JP2019107427A JP2019107427A JP2020202268A JP 2020202268 A JP2020202268 A JP 2020202268A JP 2019107427 A JP2019107427 A JP 2019107427A JP 2019107427 A JP2019107427 A JP 2019107427A JP 2020202268 A JP2020202268 A JP 2020202268A
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gas
chuck
flow path
negative pressure
substrate
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JP7333715B2 (en
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義広 川口
Yoshihiro Kawaguchi
義広 川口
陽平 山脇
Yohei Yamawaki
陽平 山脇
征二 中野
Seiji Nakano
征二 中野
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Tokyo Electron Ltd
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Tokyo Electron Ltd
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Priority to CN202020952391.8U priority patent/CN212659525U/en
Priority to TW109206658U priority patent/TWM608263U/en
Priority to KR2020200001935U priority patent/KR20200002727U/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6838—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping with gripping and holding devices using a vacuum; Bernoulli devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67092—Apparatus for mechanical treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68764—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a movable susceptor, stage or support, others than those only rotating on their own vertical axis, e.g. susceptors on a rotating caroussel
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68785—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68792—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the construction of the shaft

Abstract

To provide a technique capable of forming a plurality of sets of rotating flow paths and fixed flow paths facing each other at appropriate intervals and controlling a gas flow for each set.SOLUTION: A substrate processing apparatus includes a spindle 10 that rotates a substrate and a gas bearing 20 that rotatably supports the spindle via a gas layer. A plurality of rotating flow paths 71, 72, and 73 that flow gas are formed inside the spindle, and a plurality of fixed flow paths 81, 82, and 83 that flow gas are formed inside the gas bearing. The plurality of fixed flow paths face different rotating flow paths via the gas layer.SELECTED DRAWING: Figure 2

Description

本開示は、基板処理装置に関する。 The present disclosure relates to a substrate processing apparatus.

特許文献１には、空気軸受の内部に主軸を装着し、この主軸に真空チャックを取り付けた装置が記載されている。第１の真空通路は、主軸の真空チャック取り付け部端部から主軸の内部を通って主軸の外周面に開口し、主軸の外周面に第１の接続口を形成する。第２の真空通路は、空気軸受の内周面における第１の接続口に対向する位置に環状の第２の接続口を形成し、第２の接続口から空気軸受の内部を通る。 Patent Document 1 describes a device in which a spindle is mounted inside an air bearing and a vacuum chuck is attached to the spindle. The first vacuum passage opens from the end of the vacuum chuck mounting portion of the spindle through the inside of the spindle to the outer peripheral surface of the spindle, and forms the first connection port on the outer peripheral surface of the spindle. The second vacuum passage forms an annular second connection port at a position facing the first connection port on the inner peripheral surface of the air bearing, and passes through the inside of the air bearing from the second connection port.

特開昭６２−１９３７０４号公報Japanese Unexamined Patent Publication No. 62-193704

本開示の一態様は、適切な間隔をおいて向かい合う回転流路と固定流路との組を複数組形成でき、その組ごとにガスの流れを制御できる、技術を提供する。 One aspect of the present disclosure provides a technique capable of forming a plurality of sets of rotating flow paths and fixed flow paths facing each other at appropriate intervals, and controlling the gas flow for each set.

本開示の一態様に係る基板処理装置は、
基板を回転させるスピンドルと、
ガス層を介して前記スピンドルを回転自在に支持するガス軸受とを備え、
前記スピンドルの内部にはガスを流す回転流路が複数形成され、前記ガス軸受の内部にはガスを流す固定流路が複数形成され、
複数の前記固定流路は、前記ガス層を介して、異なる前記回転流路と向かい合う。 The substrate processing apparatus according to one aspect of the present disclosure is
The spindle that rotates the board and
A gas bearing that rotatably supports the spindle via a gas layer is provided.
A plurality of rotating flow paths through which gas flows are formed inside the spindle, and a plurality of fixed flow paths through which gas flows are formed inside the gas bearing.
The plurality of fixed flow paths face different rotation flow paths via the gas layer.

本開示の一態様によれば、適切な間隔をおいて向かい合う回転流路と固定流路との組を複数組形成でき、その組ごとにガスの流れを制御できる。 According to one aspect of the present disclosure, a plurality of pairs of rotating flow paths and fixed flow paths facing each other at appropriate intervals can be formed, and the gas flow can be controlled for each pair.

図１は、一実施形態に係る基板処理装置の基板を吸着した状態を示す断面図である。FIG. 1 is a cross-sectional view showing a state in which the substrate of the substrate processing apparatus according to the embodiment is adsorbed. 図２は、図１の一部拡大図である。FIG. 2 is a partially enlarged view of FIG. 図３は、図１に示す真空チャックから基板を取り外した状態を示す断面図である。FIG. 3 is a cross-sectional view showing a state in which the substrate is removed from the vacuum chuck shown in FIG. 図４は、図３に示す回転チャックから真空チャックを取り外した状態を示す断面図であって、図５のIV−IV線に沿った断面図である。FIG. 4 is a cross-sectional view showing a state in which the vacuum chuck is removed from the rotary chuck shown in FIG. 3, and is a cross-sectional view taken along the line IV-IV of FIG. 図５は、図４に示す基板処理装置の平面図である。FIG. 5 is a plan view of the substrate processing apparatus shown in FIG.

以下、本開示の実施形態について図面を参照して説明する。なお、各図面において同一の又は対応する構成には同一の符号を付し、説明を省略することがある。 Hereinafter, embodiments of the present disclosure will be described with reference to the drawings. In each drawing, the same or corresponding configurations may be designated by the same reference numerals and description thereof may be omitted.

図１等に示す基板処理装置１は、基板２を回転させながら、基板２を処理する。基板２は、例えばシリコンウェハなどである。基板２は、リング状のフレーム３の開口部を覆うテープ５に貼り付けられてよい。フレーム３を保持することによって基板２を保持できるので、基板２のハンドリング性を向上できる。なお、基板２は、予め不図示の支持基板と貼り合わされてもよく、支持基板を介してテープ５に貼り付けられてもよい。 The substrate processing apparatus 1 shown in FIG. 1 and the like processes the substrate 2 while rotating the substrate 2. The substrate 2 is, for example, a silicon wafer. The substrate 2 may be attached to a tape 5 that covers the opening of the ring-shaped frame 3. Since the substrate 2 can be held by holding the frame 3, the handleability of the substrate 2 can be improved. The substrate 2 may be attached to a support substrate (not shown) in advance, or may be attached to the tape 5 via the support substrate.

基板２の処理は、例えばレーザー加工である。レーザー光線は、基板２の内部に集光照射され、基板２の内部に改質層を形成する。改質層は基板２の分割の起点となる。レーザー光線は、基板２の表面に成膜された膜を除去するのに用いられてもよい。なお、基板２の処理は、レーザー加工には限定されない。例えば、基板２の処理として、研削加工、研磨加工、液処理、プラズマ処理などが挙げられる。 The processing of the substrate 2 is, for example, laser processing. The laser beam is focused and irradiated inside the substrate 2 to form a modified layer inside the substrate 2. The modified layer serves as a starting point for dividing the substrate 2. The laser beam may be used to remove the film formed on the surface of the substrate 2. The processing of the substrate 2 is not limited to laser processing. For example, the processing of the substrate 2 includes grinding processing, polishing processing, liquid processing, plasma processing and the like.

基板処理装置１は、図１等に示すように、基板２を回転させるスピンドル１０を備える。スピンドル１０は、モータＭと接続され、モータＭによって回転させられる。モータＭの回転軸は、スピンドル１０の延長線上に配置され、スピンドル１０に直接に連結される。但し、モータＭの回転軸は、スピンドル１０の延長線からずらして配置されもよく、タイミングベルトまたはギヤなどを介してスピンドル１０と連結されてもよい。 As shown in FIG. 1 and the like, the substrate processing apparatus 1 includes a spindle 10 for rotating the substrate 2. The spindle 10 is connected to the motor M and is rotated by the motor M. The rotation shaft of the motor M is arranged on an extension line of the spindle 10 and is directly connected to the spindle 10. However, the rotation shaft of the motor M may be arranged so as to be offset from the extension line of the spindle 10, and may be connected to the spindle 10 via a timing belt, a gear, or the like.

スピンドル１０は、図２に示すように、例えば、第１回転軸１１と、第２回転軸１２と、第１回転軸１１と第２回転軸１２との間にて第１回転軸１１および第２回転軸１２よりも小さな直径の中間軸１３とを含む。第１回転軸１１と、第２回転軸１２と、中間軸１３とは、本実施形態では同一の鉛直線上に配置されるが、同一の水平線上に配置されてもよい。 As shown in FIG. 2, the spindle 10 has, for example, between the first rotating shaft 11, the second rotating shaft 12, and the first rotating shaft 11 and the second rotating shaft 12, and the first rotating shaft 11 and the second rotating shaft 12. 2 Includes an intermediate shaft 13 having a diameter smaller than that of the rotating shaft 12. The first rotating shaft 11, the second rotating shaft 12, and the intermediate shaft 13 are arranged on the same vertical line in the present embodiment, but may be arranged on the same horizontal line.

基板処理装置１は、ガス層ＧＬを介してスピンドル１０を回転自在に支持するガス軸受２０を備える。ガス軸受２０は軸受用ガス供給器３０と接続され、軸受用ガス供給器３０がガス軸受２０に圧縮ガスを供給する。ガス軸受２０は、スピンドル１０との間に僅かな隙間を形成し、その隙間に圧縮ガスを供給し、供給した圧縮ガスの圧力によって径方向の荷重と軸方向の荷重とを受ける。圧縮ガスは例えば圧縮空気であり、ガス軸受２０は例えば空気軸受である。 The substrate processing device 1 includes a gas bearing 20 that rotatably supports the spindle 10 via the gas layer GL. The gas bearing 20 is connected to the bearing gas supply device 30, and the bearing gas supply device 30 supplies compressed gas to the gas bearing 20. The gas bearing 20 forms a slight gap with the spindle 10, supplies compressed gas to the gap, and receives a radial load and an axial load by the pressure of the supplied compressed gas. The compressed gas is, for example, compressed air, and the gas bearing 20 is, for example, an air bearing.

ガス軸受２０は、玉軸受およびコロ軸受とは異なり、非接触であるので、ガス軸受２０またはスピンドル１０の形状誤差によって生じうるスピンドル１０の振れ回りを抑制でき、基板２のばたつきを抑制できる。その結果、基板２の処理精度を向上できる。例えば、レーザー光線の照射位置の精度を向上でき、改質層の形成位置または膜の除去位置の精度を向上できる。 Unlike ball bearings and roller bearings, the gas bearing 20 is non-contact, so that it is possible to suppress the runout of the spindle 10 that may occur due to the shape error of the gas bearing 20 or the spindle 10, and it is possible to suppress the fluttering of the substrate 2. As a result, the processing accuracy of the substrate 2 can be improved. For example, the accuracy of the irradiation position of the laser beam can be improved, and the accuracy of the formation position of the modified layer or the removal position of the film can be improved.

また、ガス軸受２０は、玉軸受およびコロ軸受に比べて、摩擦抵抗を低減でき、高速回転を実現できる。摩擦がほとんど生じないので、粉塵の発生が抑制され、また、機械寿命が長い。さらに、ガス軸受２０は、玉軸受およびコロ軸受とは異なり、潤滑剤で潤滑せずに済むので、潤滑剤による汚染を防止できる。 Further, the gas bearing 20 can reduce frictional resistance and can realize high-speed rotation as compared with ball bearings and roller bearings. Since almost no friction occurs, the generation of dust is suppressed and the machine life is long. Further, unlike the ball bearing and the roller bearing, the gas bearing 20 does not need to be lubricated with a lubricant, so that contamination by the lubricant can be prevented.

ガス軸受２０は、筒状に形成され、第１回転軸１１の軸方向一端面（例えば下面）１１ａと、第２回転軸１２の軸方向一端面（例えば上面）１２ａと、中間軸１３の外周面１３ａとの間にガス層ＧＬを形成する。圧縮ガスの圧力が中間軸１３の外周面１３ａの周方向全体に作用するので、径方向の荷重を受けることができる。また、圧縮ガスの圧力が第１回転軸１１の軸方向一端面（例えば下面）１１ａと、第２回転軸１２の軸方向一端面（例えば上面）１２ａとの両方に作用するので、軸方向両方向の荷重を受けることができる。 The gas bearing 20 is formed in a tubular shape, and has an axial end surface (for example, lower surface) 11a of the first rotating shaft 11, an axial end surface (for example, upper surface) 12a of the second rotating shaft 12, and an outer circumference of the intermediate shaft 13. A gas layer GL is formed between the surface 13a and the surface 13a. Since the pressure of the compressed gas acts on the entire circumferential direction of the outer peripheral surface 13a of the intermediate shaft 13, it can receive a load in the radial direction. Further, since the pressure of the compressed gas acts on both the axial end surface (for example, the lower surface) 11a of the first rotating shaft 11 and the axial one end surface (for example, the upper surface) 12a of the second rotating shaft 12, both directions are axial. Can receive the load of.

なお、ガス軸受２０は、特許文献１の空気軸受と同様に、軸方向一方向のみの荷重を受けてもよい。この場合、ガス軸受２０は、第１回転軸１１の軸方向一端面（例えば下面）１１ａと、中間軸１３の外周面１３ａとの間にガス層ＧＬを形成する。中間軸１３の直径と、第２回転軸１２の直径とは同一であってもよい。 As with the air bearing of Patent Document 1, the gas bearing 20 may receive a load in only one axial direction. In this case, the gas bearing 20 forms a gas layer GL between the axial end surface (for example, the lower surface) 11a of the first rotating shaft 11 and the outer peripheral surface 13a of the intermediate shaft 13. The diameter of the intermediate shaft 13 and the diameter of the second rotating shaft 12 may be the same.

ガス軸受２０は、例えば、多孔質な第１円筒部２１と、第１円筒部２１を取り囲む第２円筒部２２とを含む。第１円筒部２１は、軸受用ガス供給器３０から供給される圧縮ガスを、第１回転軸１１の軸方向一端面１１ａと、第２回転軸１２の軸方向一端面１２ａと、中間軸１３の外周面１３ａとに向けて噴射する。一方、第２円筒部２２は、第１円筒部２１を取り囲み、圧縮ガスが第１円筒部２１から径方向外方に漏れるのを抑制し、ガス層ＧＬの圧力を高める。 The gas bearing 20 includes, for example, a porous first cylindrical portion 21 and a second cylindrical portion 22 surrounding the first cylindrical portion 21. The first cylindrical portion 21 uses the compressed gas supplied from the bearing gas supply device 30 as an axial end surface 11a of the first rotating shaft 11, an axial end surface 12a of the second rotating shaft 12, and an intermediate shaft 13. It is injected toward the outer peripheral surface 13a of the above. On the other hand, the second cylindrical portion 22 surrounds the first cylindrical portion 21 to prevent the compressed gas from leaking radially outward from the first cylindrical portion 21 and increase the pressure of the gas layer GL.

基板処理装置１は、図１等に示すように、基板２を吸着するチャック４０を備える。基板２がテープ５に貼り付けられる場合、チャック４０はテープ５を介して基板２を吸着する。チャック４０は、基板２を吸着した状態で、スピンドル１０と共に回転する。チャック４０の基板２を吸着する吸着面４１には、スピンドル１０から負圧が供給される。 As shown in FIG. 1 and the like, the substrate processing apparatus 1 includes a chuck 40 for adsorbing the substrate 2. When the substrate 2 is attached to the tape 5, the chuck 40 attracts the substrate 2 via the tape 5. The chuck 40 rotates together with the spindle 10 in a state where the substrate 2 is attracted to the chuck 40. Negative pressure is supplied from the spindle 10 to the suction surface 41 that sucks the substrate 2 of the chuck 40.

本明細書において、負圧とは、基板処理装置１の内部の気圧（例えば大気圧）よりも低い気圧を意味する。基板処理装置１の内部の気圧は、大気圧と同じではなくてもよく、大気圧よりも低くてもよいし、大気圧よりも高くてもよい。 In the present specification, the negative pressure means a pressure lower than the pressure inside the substrate processing device 1 (for example, atmospheric pressure). The pressure inside the substrate processing device 1 does not have to be the same as the atmospheric pressure, may be lower than the atmospheric pressure, or may be higher than the atmospheric pressure.

チャック４０が基板２の全体を吸着できるように、チャック４０の直径は基板２の直径と等しい。なお、チャック４０の直径は、基板２の直径以上であればよく、基板２の直径よりも大きくてもよい。 The diameter of the chuck 40 is equal to the diameter of the substrate 2 so that the chuck 40 can adsorb the entire substrate 2. The diameter of the chuck 40 may be larger than the diameter of the substrate 2 and may be larger than the diameter of the substrate 2.

チャック４０は、例えば、円盤体４２と、円盤体４２の片面の凹部に嵌め込まれる円盤状の多孔質体４３とを有する。多孔質体４３の数は、本実施形態では１つであるが、複数であってもよい。複数の多孔質体４３は同心円状に配置される。多孔質体４３に負圧が供給され、その負圧によってチャック４０が基板２を吸着する。 The chuck 40 has, for example, a disk body 42 and a disk-shaped porous body 43 that is fitted into a recess on one side of the disk body 42. The number of the porous body 43 is one in this embodiment, but it may be a plurality. The plurality of porous bodies 43 are arranged concentrically. A negative pressure is supplied to the porous body 43, and the chuck 40 adsorbs the substrate 2 by the negative pressure.

基板処理装置１は、チャック４０を吸着する回転体５０を備える。回転体５０は、スピンドル１０にボルトなどで締め付けられる。スピンドル１０には、回転体５０を介してチャック４０が取り付けられる。回転体５０は、チャック４０を吸着した状態で、スピンドル１０と共に回転する。回転体５０のチャック４０を吸着する吸着面５１には、スピンドル１０から負圧が供給される。 The substrate processing device 1 includes a rotating body 50 that attracts the chuck 40. The rotating body 50 is fastened to the spindle 10 with bolts or the like. A chuck 40 is attached to the spindle 10 via a rotating body 50. The rotating body 50 rotates together with the spindle 10 in a state where the chuck 40 is attracted to the rotating body 50. Negative pressure is supplied from the spindle 10 to the suction surface 51 that sucks the chuck 40 of the rotating body 50.

回転体５０は、例えば、円盤体５２と、円盤体５２の片面の凹部に嵌め込まれるリング状の多孔質体５３とを有する。多孔質体５３の数は、本実施形態では複数であるが、１つであってもよい。複数の多孔質体５３は同心円状に配置される。多孔質体５３に負圧が供給され、その負圧によって回転体５０がチャック４０を吸着する。なお、多孔質体５３の代わりに、溝空間が形成されてもよい。 The rotating body 50 has, for example, a disk body 52 and a ring-shaped porous body 53 that is fitted into a recess on one side of the disk body 52. The number of the porous body 53 is a plurality in the present embodiment, but may be one. The plurality of porous bodies 53 are arranged concentrically. A negative pressure is supplied to the porous body 53, and the rotating body 50 attracts the chuck 40 by the negative pressure. A groove space may be formed instead of the porous body 53.

回転体５０およびチャック４０はそれぞれ円盤状であり、回転体５０の直径はチャック４０の直径よりも小さい。チャック４０の吸着面４１の面積低下を抑制し、基板２の姿勢安定性の低下を抑制しつつ、モータＭによって回転させる部材全体の慣性モーメントを低減でき、モータＭの容量を低減できるので、モータＭを小型化できる。 The rotating body 50 and the chuck 40 are each disk-shaped, and the diameter of the rotating body 50 is smaller than the diameter of the chuck 40. While suppressing the decrease in the area of the suction surface 41 of the chuck 40 and suppressing the decrease in the posture stability of the substrate 2, the moment of inertia of the entire member rotated by the motor M can be reduced, and the capacity of the motor M can be reduced. M can be miniaturized.

個々の部材の慣性モーメントは、個々の部材の直径と厚さなどで決まる。モータＭの小型化には、上記の通り、回転体５０の直径をチャック４０の直径よりも小さくすることが有効であるが、チャック４０の厚さを薄くすることも有効である。 The moment of inertia of each member is determined by the diameter and thickness of each member. As described above, in order to reduce the size of the motor M, it is effective to make the diameter of the rotating body 50 smaller than the diameter of the chuck 40, but it is also effective to reduce the thickness of the chuck 40.

一方、チャック４０の厚さが薄いと、チャック４０を回転体５０にボルトなどで締め付けることが困難になる。ボルトはチャック４０を局所的に締め付けるので、チャック４０が変形してしまい、チャック４０の吸着面４１の平坦度が悪化してしまうからである。 On the other hand, if the thickness of the chuck 40 is thin, it becomes difficult to tighten the chuck 40 to the rotating body 50 with bolts or the like. This is because the bolt locally tightens the chuck 40, so that the chuck 40 is deformed and the flatness of the suction surface 41 of the chuck 40 deteriorates.

本実施形態によれば、回転体５０がチャック４０を吸着するので、チャック４０の吸着面４１の平坦度を維持しつつ、チャック４０を薄化でき、モータＭを小型化できる。つまり、本実施形態では、モータＭの小型化を目的として、チャック４０とスピンドル１０との間に回転体５０が配置される。 According to the present embodiment, since the rotating body 50 attracts the chuck 40, the chuck 40 can be thinned and the motor M can be miniaturized while maintaining the flatness of the suction surface 41 of the chuck 40. That is, in the present embodiment, the rotating body 50 is arranged between the chuck 40 and the spindle 10 for the purpose of downsizing the motor M.

回転体５０の吸着面５１には、図５に示すように位置決めピン５４が形成されてよい。位置決めピン５４は、チャック４０の位置決め穴に嵌合し、回転体５０の中心とチャック４０の中心とをスピンドル１０の延長線上に配置させる。なお、位置決めピン５４と位置決め穴との配置は逆でもよく、位置決め穴が回転体５０に形成され、位置決めピン５４がチャック４０に形成されてもよい。 A positioning pin 54 may be formed on the suction surface 51 of the rotating body 50 as shown in FIG. The positioning pin 54 is fitted into the positioning hole of the chuck 40, and the center of the rotating body 50 and the center of the chuck 40 are arranged on the extension line of the spindle 10. The arrangement of the positioning pin 54 and the positioning hole may be reversed, and the positioning hole may be formed in the rotating body 50 and the positioning pin 54 may be formed in the chuck 40.

基板処理装置１は、チャック４０の外側にて、フレーム３を吸着するフレーム吸着体６０を備える。フレーム吸着体６０は、フレーム３を吸着した状態で、チャック４０と共に回転する。フレーム３と基板２とを同じ回転速度で回転でき、テープ５のねじれを抑制できる。フレーム吸着体６０のフレーム３を吸着する吸着面６１には、スピンドル１０から負圧が供給される。 The substrate processing device 1 includes a frame adsorbent 60 that adsorbs the frame 3 on the outside of the chuck 40. The frame adsorbent 60 rotates together with the chuck 40 in a state where the frame 3 is adsorbed. The frame 3 and the substrate 2 can be rotated at the same rotation speed, and twisting of the tape 5 can be suppressed. Negative pressure is supplied from the spindle 10 to the suction surface 61 that sucks the frame 3 of the frame suction body 60.

フレーム吸着体６０は、例えば、回転体５０から径方向外方に延びるアーム６２の先端に取り付けられる。アーム６２は放射状に複数配置され、複数のアーム６２のそれぞれの先端にフレーム吸着体６０が取り付けられる。フレーム吸着体６０は、回転体５０の周方向に等ピッチで複数配置されてよい。 The frame adsorbent 60 is attached to, for example, the tip of an arm 62 extending radially outward from the rotating body 50. A plurality of arms 62 are arranged radially, and a frame adsorbent 60 is attached to the tip of each of the plurality of arms 62. A plurality of frame adsorbents 60 may be arranged at equal pitches in the circumferential direction of the rotating body 50.

上記の通り、基板処理装置１は、スピンドル１０と共に回転する吸着部材を複数有する。吸着部材の具体例として、チャック４０、回転体５０およびフレーム吸着体６０が挙げられる。これらの吸着部材には、個別に、スピンドル１０から負圧が供給される。 As described above, the substrate processing device 1 has a plurality of suction members that rotate together with the spindle 10. Specific examples of the suction member include a chuck 40, a rotating body 50, and a frame suction body 60. Negative pressure is individually supplied from the spindle 10 to these suction members.

そこで、図２に示すように、スピンドル１０の内部には、ガスを流す回転流路が複数形成される。回転流路として、例えば、第１回転流路７１と、第２回転流路７２と、第３回転流路７３とが形成される。なお、回転流路の数は、スピンドル１０と共に回転する吸着部材の数に応じて適宜選択されればよく、３つには限定されず、２つでもよいし、４つ以上であってもよい。 Therefore, as shown in FIG. 2, a plurality of rotating flow paths through which gas flows are formed inside the spindle 10. As the rotation flow path, for example, a first rotation flow path 71, a second rotation flow path 72, and a third rotation flow path 73 are formed. The number of rotating flow paths may be appropriately selected according to the number of suction members rotating together with the spindle 10, and is not limited to three, but may be two or four or more. ..

同様に、ガス軸受２０の内部には、ガスを流す固定流路が複数形成される。固定流路として、例えば、第１固定流路８１と、第２固定流路８２と、第３固定流路８３とが形成される。なお、固定流路の数は、スピンドル１０と共に回転する吸着部材の数に応じて適宜選択されればよく、３つには限定されず、２つでもよいし、４つ以上であってもよい。 Similarly, a plurality of fixed flow paths through which gas flows are formed inside the gas bearing 20. As the fixed flow path, for example, a first fixed flow path 81, a second fixed flow path 82, and a third fixed flow path 83 are formed. The number of fixed flow paths may be appropriately selected according to the number of suction members rotating together with the spindle 10, and is not limited to three, but may be two or four or more. ..

複数の固定流路は、ガス層ＧＬを介して、異なる回転流路と向かい合う。例えば、ガス層ＧＬを介して、第１回転流路７１と第１固定流路８１とが向かい合い、第２回転流路７２と第２固定流路８２とが向かい合い、第３回転流路７３と第３固定流路８３とが向かい合う。 The plurality of fixed flow paths face different rotation flow paths via the gas layer GL. For example, the first rotating flow path 71 and the first fixed flow path 81 face each other via the gas layer GL, the second rotating flow path 72 and the second fixed flow path 82 face each other, and the third rotating flow path 73 The third fixed flow path 83 faces each other.

ガス層ＧＬの厚さは、スピンドル１０を円滑に回転させるべく高精度で管理され、ガス層ＧＬのガスの圧力を高めるべく薄い厚さに管理される。それゆえ、適切な間隔をおいて互いに向かい合う固定流路と回転流路との組を複数組形成でき、その組ごとにガスの流れを制御できる。互いに向かい合う固定流路と回転流路との間隔が狭く、固定流路と回転流路との間でガスが円滑に流れるからである。従って、複数の吸着部材に個別に負圧を供給でき、吸着部材ごとに吸着と吸着の解除とを実施できる。例えば、回転体５０がチャック４０を吸着した状態で、チャック４０が基板２を吸着したり、その吸着を解除したりできる。また、回転体５０がチャック４０を吸着した状態で、フレーム吸着体６０がフレーム３を吸着したり、その吸着を解除したりできる。 The thickness of the gas layer GL is controlled with high accuracy so as to rotate the spindle 10 smoothly, and is controlled to be thin so as to increase the gas pressure of the gas layer GL. Therefore, a plurality of sets of fixed flow paths and rotating flow paths facing each other can be formed at appropriate intervals, and the gas flow can be controlled for each set. This is because the distance between the fixed flow path and the rotating flow path facing each other is narrow, and the gas flows smoothly between the fixed flow path and the rotating flow path. Therefore, the negative pressure can be individually supplied to the plurality of suction members, and the suction and the suction can be released for each suction member. For example, with the rotating body 50 adsorbing the chuck 40, the chuck 40 can adsorb the substrate 2 or release the adsorption. Further, in a state where the rotating body 50 sucks the chuck 40, the frame suction body 60 can suck the frame 3 or release the suction.

図２に示すように、複数の固定流路、例えば第１固定流路８１と第２固定流路８２と第３固定流路８３とは、ガス軸受２０の内周面２０ａにて、ガス軸受２０の軸方向に間隔をおいて開口する。図２において、８１ａは第１固定流路８１の開口であり、８２ａは第２固定流路８２の開口であり、８３ａは第３固定流路８３の開口である。 As shown in FIG. 2, the plurality of fixed flow paths, for example, the first fixed flow path 81, the second fixed flow path 82, and the third fixed flow path 83 are gas bearings on the inner peripheral surface 20a of the gas bearing 20. Open at intervals of 20 in the axial direction. In FIG. 2, 81a is an opening of the first fixed flow path 81, 82a is an opening of the second fixed flow path 82, and 83a is an opening of the third fixed flow path 83.

一方、複数の回転流路、例えば第１回転流路７１と第２回転流路７２と第３回転流路７３とは、中間軸１３の外周面１３ａにて、中間軸１３の軸方向に間隔をおいて開口し、中間軸１３の周方向全体に亘ってリング状に開口する。図２において、７１ａは第１回転流路７１の開口であり、７２ａは第２回転流路７２の開口であり、７３ａは第３回転流路７３の開口である。 On the other hand, the plurality of rotation flow paths, for example, the first rotation flow path 71, the second rotation flow path 72, and the third rotation flow path 73 are spaced apart from each other on the outer peripheral surface 13a of the intermediate shaft 13 in the axial direction of the intermediate shaft 13. It opens in a ring shape over the entire circumferential direction of the intermediate shaft 13. In FIG. 2, 71a is an opening of the first rotation flow path 71, 72a is an opening of the second rotation flow path 72, and 73a is an opening of the third rotation flow path 73.

第１固定流路８１の開口８１ａと第１回転流路７１の開口７１ａとが向かい合い、第２固定流路８２の開口８２ａと第２回転流路７２の開口７２ａとが向かい合い、第３固定流路８３の開口８３ａと第３回転流路７３の開口７３ａとが向かい合う。 The opening 81a of the first fixed flow path 81 and the opening 71a of the first rotation flow path 71 face each other, the opening 82a of the second fixed flow path 82 and the opening 72a of the second rotation flow path 72 face each other, and the third fixed flow path The opening 83a of the road 83 and the opening 73a of the third rotation flow path 73 face each other.

回転される開口７１ａ、７２ａ、７３ａは、リング状に形成されるので、固定される開口８１ａ、８２ａ、８３ａと常に向かい合うことができる。その結果、スピンドル１０の回転中に、負圧の供給が途切れるのを防止できる。 Since the rotated openings 71a, 72a, 73a are formed in a ring shape, they can always face the fixed openings 81a, 82a, 83a. As a result, it is possible to prevent the supply of negative pressure from being interrupted during the rotation of the spindle 10.

なお、本実施形態では、全ての固定流路がガス軸受２０の内周面２０ａにて開口するが、１つ以上の固定流路がガス軸受２０の軸方向一端面２０ｂまたは軸方向他端面２０ｃにて開口してもよい。 In the present embodiment, all the fixed flow paths are opened at the inner peripheral surface 20a of the gas bearing 20, but one or more fixed flow paths are the axial one end surface 20b or the axial other end surface 20c of the gas bearing 20. It may be opened with.

同様に、本実施形態では、全ての回転流路が中間軸１３の外周面１３ａにて開口するが、１つ以上の回転流路が第１回転軸１１の軸方向一端面１１ａまたは第２回転軸１２の軸方向一端面１２ａにて開口してもよい。 Similarly, in the present embodiment, all the rotating flow paths are opened on the outer peripheral surface 13a of the intermediate shaft 13, but one or more rotating flow paths are the axial one end surface 11a or the second rotation of the first rotating shaft 11. It may be opened at one end surface 12a in the axial direction of the shaft 12.

第１固定流路８１と、第１回転流路７１とは、チャック４０の吸着面４１に負圧を供給する第１負圧供給ライン９１を形成する。第１負圧供給ライン９１は、図１に示すようにガス軸受２０、スピンドル１０および回転体５０を通り、チャック４０の吸着面４１に負圧を供給する。第１負圧供給ライン９１の一端には、ガスを吸引する第１ガス吸引器１０１が設置される。第１ガス吸引器１０１として、例えば真空ポンプまたはエジェクタが用いられる。第１ガス吸引器１０１によって発生した負圧は、第１負圧供給ライン９１によって、チャック４０の吸着面４１に供給される。 The first fixed flow path 81 and the first rotation flow path 71 form a first negative pressure supply line 91 that supplies negative pressure to the suction surface 41 of the chuck 40. As shown in FIG. 1, the first negative pressure supply line 91 passes through the gas bearing 20, the spindle 10, and the rotating body 50, and supplies negative pressure to the suction surface 41 of the chuck 40. A first gas aspirator 101 that sucks gas is installed at one end of the first negative pressure supply line 91. As the first gas aspirator 101, for example, a vacuum pump or an ejector is used. The negative pressure generated by the first gas suction device 101 is supplied to the suction surface 41 of the chuck 40 by the first negative pressure supply line 91.

第１負圧供給ライン９１の第１固定流路８１と、第１ガス吸引器１０１との間には、ガスの流れ方向を切換える第１切換器１１１を介して、チャック４０の吸着面４１に向けてガスを供給する第１ガス供給器１２１が設置される。第１切換器１１１は、第１固定流路８１を、第１ガス吸引器１０１に対して開放し且つ第１ガス供給器１２１に対して閉塞した状態と、第１ガス吸引器１０１に対して閉塞し且つ第１ガス供給器１２１に対して開放した状態とに切換えられる。第１切換器１１１として、例えば三方切換弁が用いられる。三方切換弁の代わりに、複数の開閉弁が用いられてもよい。 Between the first fixed flow path 81 of the first negative pressure supply line 91 and the first gas suction device 101, the suction surface 41 of the chuck 40 is connected to the suction surface 41 via the first switcher 111 that switches the gas flow direction. A first gas supply device 121 that supplies gas toward the vehicle is installed. The first switch 111 has the first fixed flow path 81 open to the first gas aspirator 101 and closed to the first gas supply device 121, and the first gas aspirator 101. It is switched to a closed state and an open state with respect to the first gas supply device 121. As the first switch 111, for example, a three-way switching valve is used. A plurality of on-off valves may be used instead of the three-way switching valve.

吸着の解除時には、第１ガス供給器１２１によって発生した正圧が、第１切換器１１１から、第１固定流路８１と第１回転流路７１とを通り、チャック４０の吸着面４１に供給される。その結果、吸着の解除を確実に行うことができる。なお、正圧の代わりに、基板処理装置１の内部の気圧と同じ気圧が、チャック４０の吸着面４１に供給されてもよい。また、第１負圧供給ライン９１の途中にリーク弁が設置され、リーク弁が負圧の解除、ひいては吸着の解除を実施してもよい。 When the suction is released, the positive pressure generated by the first gas supply device 121 is supplied from the first switcher 111 to the suction surface 41 of the chuck 40 through the first fixed flow path 81 and the first rotation flow path 71. Will be done. As a result, the adsorption can be reliably released. Instead of the positive pressure, the same atmospheric pressure as the internal pressure of the substrate processing device 1 may be supplied to the suction surface 41 of the chuck 40. Further, a leak valve may be installed in the middle of the first negative pressure supply line 91, and the leak valve may release the negative pressure, and thus release the adsorption.

第２固定流路８２と、第２回転流路７２とは、回転体５０の吸着面５１に負圧を供給する第２負圧供給ライン９２を形成する。第２負圧供給ライン９２は、ガス軸受２０、スピンドル１０を通り、回転体５０の吸着面５１に負圧を供給する。第２負圧供給ライン９２の一端には、ガスを吸引する第２ガス吸引器１０２が設置される。第２ガス吸引器１０２によって発生した負圧は、第２負圧供給ライン９２によって、回転体５０の吸着面５１に供給される。 The second fixed flow path 82 and the second rotation flow path 72 form a second negative pressure supply line 92 that supplies negative pressure to the suction surface 51 of the rotating body 50. The second negative pressure supply line 92 passes through the gas bearing 20 and the spindle 10 and supplies negative pressure to the suction surface 51 of the rotating body 50. A second gas suction device 102 that sucks gas is installed at one end of the second negative pressure supply line 92. The negative pressure generated by the second gas suction device 102 is supplied to the suction surface 51 of the rotating body 50 by the second negative pressure supply line 92.

第２負圧供給ライン９２の第２固定流路８２と、第２ガス吸引器１０２との間には、ガスの流れ方向を切換える第２切換器１１２を介して、回転体５０の吸着面５１に向けてガスを供給する第２ガス供給器１２２が設置される。第２切換器１１２は、第２固定流路８２を、第２ガス吸引器１０２に対して開放し且つ第２ガス供給器１２２に対して閉塞した状態と、第２ガス吸引器１０２に対して閉塞し且つ第２ガス供給器１２２に対して開放した状態とに切換えられる。 The suction surface 51 of the rotating body 50 is connected between the second fixed flow path 82 of the second negative pressure supply line 92 and the second gas suction device 102 via the second switcher 112 that switches the gas flow direction. A second gas supply device 122 that supplies gas toward the vehicle is installed. The second switch 112 has the second fixed flow path 82 open to the second gas aspirator 102 and closed to the second gas supply device 122, and the second gas aspirator 102. It is switched to a closed state and an open state with respect to the second gas supply device 122.

吸着の解除時には、第２ガス供給器１２２によって発生した正圧が、第２切換器１１２から、第２固定流路８２と第２回転流路７２とを通り、回転体５０の吸着面５１に供給される。その結果、吸着の解除を確実に行うことができる。なお、正圧の代わりに、基板処理装置１の内部の気圧と同じ気圧が、回転体５０の吸着面５１に供給されてもよい。また、第２負圧供給ライン９２の途中にリーク弁が設置され、リーク弁が負圧の解除、ひいては吸着の解除を実施してもよい。 When the suction is released, the positive pressure generated by the second gas supply device 122 passes from the second switch 112 through the second fixed flow path 82 and the second rotation flow path 72 to the suction surface 51 of the rotating body 50. Will be supplied. As a result, the adsorption can be reliably released. Instead of the positive pressure, the same atmospheric pressure as the internal pressure of the substrate processing device 1 may be supplied to the suction surface 51 of the rotating body 50. Further, a leak valve may be installed in the middle of the second negative pressure supply line 92, and the leak valve may release the negative pressure, and thus release the adsorption.

第３固定流路８３と、第３回転流路７３とは、フレーム吸着体６０の吸着面６１に負圧を供給する第３負圧供給ライン９３を形成する。第３負圧供給ライン９３は、ガス軸受２０、スピンドル１０を通り、フレーム吸着体６０の吸着面６１に負圧を供給する。第３負圧供給ライン９３の一端には、ガスを吸引する第３ガス吸引器１０３が設置される。第３ガス吸引器１０３によって発生した負圧は、第３負圧供給ライン９３によって、フレーム吸着体６０の吸着面６１に供給される。 The third fixed flow path 83 and the third rotation flow path 73 form a third negative pressure supply line 93 that supplies negative pressure to the suction surface 61 of the frame adsorbent 60. The third negative pressure supply line 93 passes through the gas bearing 20 and the spindle 10 and supplies negative pressure to the suction surface 61 of the frame adsorbent 60. A third gas suction device 103 that sucks gas is installed at one end of the third negative pressure supply line 93. The negative pressure generated by the third gas suction device 103 is supplied to the suction surface 61 of the frame adsorbent 60 by the third negative pressure supply line 93.

第３負圧供給ライン９３は可撓性のチューブ６３を含み、チューブ６３が回転体５０とフレーム吸着体６０との間に流路を形成する。チューブ６３は、図５に示すように、例えば、回転体５０から径方向外方に突出し、途中から２本に分岐し、２つのフレーム吸着体６０に取り付けられる。チューブ６３の配置および数は、フレーム吸着体６０の配置および数に応じて適宜選択される。 The third negative pressure supply line 93 includes a flexible tube 63, which forms a flow path between the rotating body 50 and the frame adsorbent 60. As shown in FIG. 5, the tube 63 projects radially outward from the rotating body 50, branches into two from the middle, and is attached to the two frame adsorbents 60. The arrangement and number of tubes 63 are appropriately selected according to the arrangement and number of frame adsorbents 60.

第３負圧供給ライン９３の第３固定流路８３と、第３ガス吸引器１０３との間には、ガスの流れ方向を切換える第３切換器１１３を介して、フレーム吸着体６０の吸着面６１に向けてガスを供給する第３ガス供給器１２３が設置される。第３切換器１１３は、第３固定流路８３を、第３ガス吸引器１０３に対して開放し且つ第３ガス供給器１２３に対して閉塞した状態と、第３ガス吸引器１０３に対して閉塞し且つ第３ガス供給器１２３に対して開放した状態とに切換えられる。 The suction surface of the frame adsorbent 60 is connected between the third fixed flow path 83 of the third negative pressure supply line 93 and the third gas suction device 103 via the third switch 113 that switches the gas flow direction. A third gas supply device 123 that supplies gas toward 61 is installed. The third switch 113 opens the third fixed flow path 83 with respect to the third gas suction device 103 and closes with respect to the third gas supply device 123, and the third gas suction device 103. It is switched to a closed state and an open state with respect to the third gas supply device 123.

吸着の解除時には、第３ガス供給器１２３によって発生した正圧が、第３切換器１１３から、第３固定流路８３と第３回転流路７３とを通り、フレーム吸着体６０の吸着面６１に供給される。その結果、吸着の解除を確実に行うことができる。なお、正圧の代わりに、基板処理装置１の内部の気圧と同じ気圧が、フレーム吸着体６０の吸着面６１に供給されてもよい。また、第３負圧供給ライン９３の途中にリーク弁が設置され、リーク弁が負圧の解除、ひいては吸着の解除を実施してもよい。 When the adsorption is released, the positive pressure generated by the third gas supply device 123 passes from the third switch 113 through the third fixed flow path 83 and the third rotation flow path 73, and the suction surface 61 of the frame adsorbent 60. Is supplied to. As a result, the adsorption can be reliably released. Instead of the positive pressure, the same atmospheric pressure as the internal atmospheric pressure of the substrate processing device 1 may be supplied to the adsorption surface 61 of the frame adsorbent 60. Further, a leak valve may be installed in the middle of the third negative pressure supply line 93, and the leak valve may release the negative pressure, and thus release the adsorption.

以上、本開示に係る基板処理装置について説明したが、本開示は上記実施形態などに限定されない。特許請求の範囲に記載された範疇内において、各種の変更、修正、置換、付加、削除、および組み合わせが可能である。それらについても当然に本開示の技術的範囲に属する。 Although the substrate processing apparatus according to the present disclosure has been described above, the present disclosure is not limited to the above-described embodiment and the like. Within the scope of the claims, various changes, modifications, replacements, additions, deletions, and combinations are possible. These also naturally belong to the technical scope of the present disclosure.

基板２は、シリコンウェハには限定されない。基板２は、例えば、炭化珪素ウェハ、窒化ガリウムウェハ、酸化ガリウムウェハなどであってもよい。また、基板２は、ガラス基板であってもよい。基板２と貼り合わされる支持基板について同様である。 The substrate 2 is not limited to a silicon wafer. The substrate 2 may be, for example, a silicon carbide wafer, a gallium nitride wafer, a gallium oxide wafer, or the like. Further, the substrate 2 may be a glass substrate. The same applies to the support substrate to be bonded to the substrate 2.

１ 基板処理装置
２ 基板
３ フレーム
５ テープ
１０ スピンドル
１１ 第１回転軸
１１ａ 軸方向一端面
１２ 第２回転軸
１２ａ 軸方向一端面
１３ 中間軸
１３ａ 外周面
２０ ガス軸受
２０ａ 内周面
２０ｂ 軸方向一端面
２０ｃ 軸方向他端面
４０ チャック
４１ 吸着面
５０ 回転体
５１ 吸着面
６０ フレーム吸着体
６１ 吸着面
７１ 第１回転流路
７２ 第２回転流路
７３ 第３回転流路
８１ 第１固定流路
８２ 第２固定流路
８３ 第３固定流路
９１ 第１負圧供給ライン
９２ 第２負圧供給ライン
９３ 第３負圧供給ライン 1 Substrate processing device 2 Substrate 3 Frame 5 Tape 10 Spindle 11 1st rotating shaft 11a Axial end surface 12 2nd rotating shaft 12a Axial end surface 13 Intermediate shaft 13a Outer peripheral surface 20 Gas bearing 20a Inner peripheral surface 20b Axial end surface 20c Axial other end surface 40 Chuck 41 Suction surface 50 Rotating body 51 Suction surface 60 Frame suction body 61 Suction surface 71 First rotation flow path 72 Second rotation flow path 73 Third rotation flow path 81 First fixed flow path 82 Second Fixed flow path 83 Third fixed flow path 91 First negative pressure supply line 92 Second negative pressure supply line 93 Third negative pressure supply line

Claims (9)

基板を回転させるスピンドルと、
ガス層を介して前記スピンドルを回転自在に支持するガス軸受とを備え、
前記スピンドルの内部にはガスを流す回転流路が複数形成され、前記ガス軸受の内部にはガスを流す固定流路が複数形成され、
複数の前記固定流路は、前記ガス層を介して、異なる前記回転流路と向かい合う、基板処理装置。 The spindle that rotates the board and
A gas bearing that rotatably supports the spindle via a gas layer is provided.
A plurality of rotating flow paths through which gas flows are formed inside the spindle, and a plurality of fixed flow paths through which gas flows are formed inside the gas bearing.
A substrate processing apparatus in which a plurality of the fixed flow paths face different rotation flow paths via the gas layer. 前記基板を吸着するチャックと、
前記チャックを吸着する回転体とを備え、
前記スピンドルには、前記回転体を介して前記チャックが取り付けられ、
一の前記固定流路と、一の前記回転流路とは、前記チャックの吸着面に負圧を供給する第１負圧供給ラインを形成し、
他の一の前記固定流路と、他の一の前記回転流路とは、前記回転体の吸着面に負圧を供給する第２負圧供給ラインを形成する、請求項１に記載の基板処理装置。 A chuck that adsorbs the substrate and
A rotating body that attracts the chuck is provided.
The chuck is attached to the spindle via the rotating body.
The one fixed flow path and the one rotary flow path form a first negative pressure supply line that supplies a negative pressure to the suction surface of the chuck.
The substrate according to claim 1, wherein the other fixed flow path and the other rotating flow path form a second negative pressure supply line that supplies negative pressure to the suction surface of the rotating body. Processing equipment. 前記回転体および前記チャックは、それぞれ、円盤状であり、
前記回転体の直径は、前記チャックの直径よりも小さい、請求項２に記載の基板処理装置。 The rotating body and the chuck are each disk-shaped and have a disk shape.
The substrate processing apparatus according to claim 2, wherein the diameter of the rotating body is smaller than the diameter of the chuck. 前記チャックの直径は、前記基板の直径以上である、請求項２または３に記載の基板処理装置。 The substrate processing apparatus according to claim 2 or 3, wherein the diameter of the chuck is equal to or larger than the diameter of the substrate. 前記第１負圧供給ラインの一端には、ガスを吸引する第１ガス吸引器が設置され、
前記第１負圧供給ラインの前記固定流路と前記第１ガス吸引器との間には、ガスの流れ方向を切換える第１切換器を介して、前記チャックの吸着面に向けてガスを供給する第１ガス供給器が設置される、請求項２〜４のいずれか１項に記載の基板処理装置。 A first gas aspirator for sucking gas is installed at one end of the first negative pressure supply line.
Gas is supplied from the fixed flow path of the first negative pressure supply line and the first gas suction device toward the suction surface of the chuck via a first switcher that switches the gas flow direction. The substrate processing apparatus according to any one of claims 2 to 4, wherein the first gas supply device is installed. 前記基板は、リング状のフレームの開口部を覆うテープに貼り付けられ、
前記チャックの外側にて前記フレームを吸着し、前記チャックと共に回転するフレーム吸着体をさらに備え、
さらに別の前記固定流路と、さらに別の前記回転流路とは、前記フレーム吸着体の吸着面に負圧を供給する第３負圧供給ラインを形成する、請求項２〜５のいずれか１項に記載の基板処理装置。 The substrate is attached to a tape covering the opening of the ring-shaped frame.
A frame adsorbent that attracts the frame on the outside of the chuck and rotates with the chuck is further provided.
Any of claims 2 to 5, wherein yet another fixed flow path and yet another rotary flow path form a third negative pressure supply line that supplies negative pressure to the suction surface of the frame adsorbent. The substrate processing apparatus according to item 1. 前記基板は、リング状のフレームの開口部を覆うテープに貼り付けられ、
前記基板を吸着し、前記スピンドルと共に回転するチャックと、
前記チャックの外側にて前記フレームを吸着し、前記チャックと共に回転するフレーム吸着体とを備え、
一の前記固定流路と、一の前記回転流路とは、前記チャックの吸着面に負圧を供給する負圧供給ラインを形成し、
他の一の前記固定流路と、他の一の前記回転流路とは、前記フレーム吸着体の吸着面に負圧を供給する負圧供給ラインを形成する、請求項１に記載の基板処理装置。 The substrate is attached to a tape covering the opening of the ring-shaped frame.
A chuck that attracts the substrate and rotates with the spindle,
A frame adsorbent that attracts the frame on the outside of the chuck and rotates with the chuck is provided.
The one fixed flow path and the one rotary flow path form a negative pressure supply line that supplies a negative pressure to the suction surface of the chuck.
The substrate treatment according to claim 1, wherein the other fixed flow path and the other rotary flow path form a negative pressure supply line that supplies a negative pressure to the suction surface of the frame adsorbent. apparatus. 前記スピンドルは、第１回転軸と、第２回転軸と、前記第１回転軸と前記第２回転軸との間にて前記第１回転軸および前記第２回転軸よりも小さな直径の中間軸とを含み、
前記ガス軸受は、筒状に形成され、前記第１回転軸の軸方向一端面と、前記第２回転軸の軸方向一端面と、前記中間軸の外周面との間に前記ガス層を形成する、請求項１〜７のいずれか１項に記載の基板処理装置。 The spindle is an intermediate shaft having a diameter smaller than that of the first rotation shaft, the second rotation shaft, the first rotation shaft and the second rotation shaft, and the first rotation shaft and the second rotation shaft. Including and
The gas bearing is formed in a tubular shape, and forms the gas layer between the axial end surface of the first rotating shaft, the axial one end surface of the second rotating shaft, and the outer peripheral surface of the intermediate shaft. The substrate processing apparatus according to any one of claims 1 to 7. 複数の前記固定流路は、前記ガス軸受の内周面にて、前記ガス軸受の軸方向に間隔をおいて開口し、
複数の前記回転流路は、前記中間軸の外周面にて、前記中間軸の軸方向に間隔をおいて開口し、前記中間軸の周方向全体に亘ってリング状に開口する、請求項８に記載の基板処理装置。 The plurality of fixed flow paths are opened on the inner peripheral surface of the gas bearing at intervals in the axial direction of the gas bearing.
8. The plurality of rotational flow paths are opened on the outer peripheral surface of the intermediate shaft at intervals in the axial direction of the intermediate shaft, and are opened in a ring shape over the entire circumferential direction of the intermediate shaft. The substrate processing apparatus according to.
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