CN212659525U - Substrate processing apparatus - Google Patents
Substrate processing apparatus Download PDFInfo
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- CN212659525U CN212659525U CN202020952391.8U CN202020952391U CN212659525U CN 212659525 U CN212659525 U CN 212659525U CN 202020952391 U CN202020952391 U CN 202020952391U CN 212659525 U CN212659525 U CN 212659525U
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- negative pressure
- processing apparatus
- flow paths
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6838—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping with gripping and holding devices using a vacuum; Bernoulli devices
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67092—Apparatus for mechanical treatment
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68764—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a movable susceptor, stage or support, others than those only rotating on their own vertical axis, e.g. susceptors on a rotating caroussel
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68785—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68792—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the construction of the shaft
Abstract
The utility model provides a substrate processing device, this substrate processing device can form the group of multiunit in order to separate the relative rotatory flow path of appropriate spaced mode and fixed flow path, can be to the gaseous flow of every group control in these groups. The substrate processing apparatus includes: a spindle that rotates the substrate; and a gas bearing for rotatably supporting the spindle through a gas layer, wherein a plurality of rotary flow paths through which gas flows are formed inside the spindle, a plurality of fixed flow paths through which gas flows are formed inside the gas bearing, and the plurality of fixed flow paths face different rotary flow paths through the gas layer.
Description
Technical Field
The utility model relates to a substrate processing device.
Background
Documents of the prior art
Patent document
Patent document 1: japanese laid-open patent publication No. 62-193704
SUMMERY OF THE UTILITY MODEL
Problem to be solved by utility model
The utility model discloses a technical scheme provides one kind following technique: a plurality of sets of the rotary flow path and the fixed flow path opposed to each other with an appropriate interval therebetween can be formed, and the flow of gas can be controlled for each of these sets.
Means for solving the problems
The utility model discloses a technical scheme's base plate processing apparatus possesses:
a spindle that rotates the substrate; and
a gas bearing for rotatably supporting the spindle through a gas layer,
a plurality of rotary flow paths through which gas flows are formed inside the main shaft, a plurality of fixed flow paths through which gas flows are formed inside the gas bearing,
the plurality of fixed flow paths are opposed to different rotary flow paths with the gas layer interposed therebetween.
It is preferable that the first and second liquid crystal layers are formed of,
the substrate processing apparatus includes:
a chuck that adsorbs the substrate; and
a rotating body that adsorbs the chuck,
the chuck is attached to the spindle via the rotating body,
one of the fixed flow paths and one of the rotary flow paths form a 1 st negative pressure supply line that supplies a negative pressure to the suction surface of the chuck,
the other of the fixed flow paths and the other of the rotary flow paths form a 2 nd negative pressure supply line that supplies a negative pressure to the suction surface of the rotary body.
It is preferable that the first and second liquid crystal layers are formed of,
the rotating body and the chuck are respectively in the shape of a disk,
the diameter of the rotating body is smaller than that of the chuck.
It is preferable that the first and second liquid crystal layers are formed of,
the diameter of the chuck is greater than or equal to the diameter of the substrate.
It is preferable that the first and second liquid crystal layers are formed of,
a 1 st gas aspirator to aspirate gas is provided at one end of the 1 st negative pressure supply line,
a 1 st gas supplier is provided between the 1 st gas aspirator and the fixed flow path of the 1 st negative pressure supply line, and the 1 st gas supplier supplies gas toward the adsorption surface of the chuck via a 1 st switch that switches a flow direction of the gas.
It is preferable that the first and second liquid crystal layers are formed of,
the substrate is adhered to a tape covering an opening of the annular frame,
the substrate processing apparatus further includes a frame suction member that sucks the frame outside the chuck and rotates together with the chuck,
the further fixed flow path and the further rotary flow path form a 3 rd negative pressure supply line that supplies a negative pressure to the adsorption surface of the frame adsorbent.
It is preferable that the first and second liquid crystal layers are formed of,
the substrate is adhered to a tape covering an opening of the annular frame,
the substrate processing apparatus includes:
a chuck that adsorbs the substrate and rotates together with the spindle; and
a frame suction body sucking the frame at an outer side of the chuck and rotating together with the chuck,
one of the fixed flow paths and one of the rotary flow paths form a negative pressure supply line that supplies a negative pressure to the suction surface of the chuck,
the other of the fixed flow paths and the other of the rotary flow paths form a negative pressure supply line for supplying a negative pressure to the adsorption surface of the frame adsorbent.
It is preferable that the first and second liquid crystal layers are formed of,
the main shaft includes: 1 st rotation axis; a 2 nd rotation axis; and an intermediate shaft located between the 1 st and 2 nd rotation shafts, having a diameter smaller than diameters of the 1 st and 2 nd rotation shafts,
the gas bearing is formed in a cylindrical shape, and the gas layer is formed between one axial end surface of the 1 st rotating shaft, one axial end surface of the 2 nd rotating shaft, and an outer peripheral surface of the intermediate shaft.
It is preferable that the first and second liquid crystal layers are formed of,
the plurality of fixed flow paths open to an inner peripheral surface of the gas bearing at intervals in an axial direction of the gas bearing,
the plurality of rotation flow passages open to an outer peripheral surface of the intermediate shaft at intervals in an axial direction of the intermediate shaft, and are annularly open in an entire circumferential direction of the intermediate shaft.
Effect of the utility model
According to an aspect of the present invention, a plurality of sets of the rotary flow path and the fixed flow path that are opposed to each other with an appropriate interval therebetween can be formed, and the flow of gas can be controlled for each of these sets.
Drawings
Fig. 1 is a cross-sectional view showing a state where a substrate is adsorbed in a substrate processing apparatus according to an embodiment.
Fig. 2 is a partially enlarged view of fig. 1.
Fig. 3 is a sectional view showing a state where the substrate is removed from the vacuum chuck shown in fig. 1.
Fig. 4 is a sectional view showing a state where the vacuum chuck is removed from the spin chuck shown in fig. 3, and is a sectional view taken along the line IV-IV of fig. 5.
Fig. 5 is a plan view of the substrate processing apparatus shown in fig. 4.
Detailed Description
Hereinafter, embodiments of the present invention will be described with reference to the drawings. In the drawings, the same or corresponding components are denoted by the same reference numerals, and description thereof may be omitted.
The substrate processing apparatus 1 shown in fig. 1 and the like processes a substrate 2 while rotating the substrate 2. The substrate 2 is, for example, a silicon wafer. The substrate 2 is preferably attached to a tape 5 covering the opening of the annular frame 3. Since the substrate 2 can be held by the holding frame 3, the operability of the substrate 2 can be improved. The substrate 2 may be bonded to a support substrate not shown in the drawings in advance, or may be bonded to the tape 5 via the support substrate.
The processing of the substrate 2 is, for example, laser processing. The laser beam is focused and irradiated to the inside of the substrate 2, and a modified layer is formed inside the substrate 2. The modified layer serves as a starting point for dividing the substrate 2. The laser beam may be used to remove a film formed on the surface of the substrate 2. The processing of the substrate 2 is not limited to laser processing. Examples of the treatment of the substrate 2 include grinding, polishing, liquid treatment, and plasma treatment.
As shown in fig. 1 and the like, the substrate processing apparatus 1 includes a spindle 10 that rotates the substrate 2. The spindle 10 is connected to a motor M and rotated by the motor M. The rotation shaft of the motor M is disposed on an extension line of the main shaft 10 and directly connected to the main shaft 10. However, the rotation shaft of the motor M may be disposed to be offset from the extension line of the main shaft 10, or may be coupled to the main shaft 10 via a timing belt, a gear, or the like.
As shown in fig. 2, the spindle 10 includes, for example: the 1 st rotation shaft 11; a 2 nd rotation shaft 12; and an intermediate shaft 13 located between the 1 st and 2 nd rotation shafts 11 and 12 and having a diameter smaller than the diameters of the 1 st and 2 nd rotation shafts 11 and 12. The 1 st rotation shaft 11, the 2 nd rotation shaft 12, and the intermediate shaft 13 are disposed on the same vertical line in the present embodiment, but may be disposed on the same horizontal line.
The substrate processing apparatus 1 includes a gas bearing 20 for rotatably supporting the spindle 10 via the gas layer GL. The gas bearing 20 is connected to a bearing gas supplier 30, and the bearing gas supplier 30 supplies compressed gas to the gas bearing 20. A minute gap is formed between the gas bearing 20 and the main shaft 10, and compressed gas is supplied to the gap, and the gas bearing 20 receives a radial load and an axial load by the pressure of the supplied compressed gas. The compressed gas is, for example, compressed air, and the gas bearing 20 is, for example, an air bearing.
Since the gas bearing 20 is non-contact, unlike a ball bearing and a roller bearing, it is possible to suppress whirling of the spindle 10 which may occur due to a shape error of the gas bearing 20 or the spindle 10, and to suppress wobbling of the substrate 2. As a result, the processing accuracy of the substrate 2 can be improved. For example, the accuracy of the irradiation position of the laser beam can be improved, and the accuracy of the formation position of the modified layer or the removal position of the film can be improved.
In addition, the gas bearing 20 can reduce frictional resistance as compared with a ball bearing and a roller bearing, and can realize high-speed rotation. Since friction hardly occurs, generation of dust is suppressed, and the mechanical life is long. Further, unlike the ball bearing and the roller bearing, the gas bearing 20 is sufficient not to be lubricated with a lubricant, and contamination by the lubricant can be prevented.
The gas bearing 20 is formed in a cylindrical shape, and a gas layer GL is formed between one axial end surface (for example, a lower surface) 11a of the 1 st rotating shaft 11, one axial end surface (for example, an upper surface) 12a of the 2 nd rotating shaft 12, and an outer peripheral surface 13a of the intermediate shaft 13. Since the pressure of the compressed gas acts on the entire outer peripheral surface 13a of the intermediate shaft 13 in the circumferential direction, the intermediate shaft can receive a load in the radial direction. Further, since the pressure of the compressed gas acts on both of the one axial end surface (for example, the lower surface) 11a of the 1 st rotating shaft 11 and the one axial end surface (for example, the upper surface) 12a of the 2 nd rotating shaft 12, the load in both axial directions can be received.
The gas bearing 20 may receive a load in only one axial direction, as in the air bearing of patent document 1. In this case, the gas bearing 20 forms a gas layer GL between one axial end surface (e.g., the lower surface) 11a of the 1 st rotating shaft 11 and the outer peripheral surface 13a of the intermediate shaft 13. The diameter of the intermediate shaft 13 and the diameter of the 2 nd rotating shaft 12 may be the same.
The gas bearing 20 includes, for example, a porous 1 st cylinder portion 21 and a 2 nd cylinder portion 22 surrounding the 1 st cylinder portion 21. The 1 st cylinder portion 21 injects the compressed gas supplied from the bearing gas supplier 30 toward the one axial end surface 11a of the 1 st rotating shaft 11, the one axial end surface 12a of the 2 nd rotating shaft 12, and the outer peripheral surface 13a of the intermediate shaft 13. On the other hand, the 2 nd cylinder part 22 surrounds the 1 st cylinder part 21, and suppresses leakage of the compressed gas from the 1 st cylinder part 21 in the radially outward direction, thereby increasing the pressure of the gas layer GL.
As shown in fig. 1 and the like, the substrate processing apparatus 1 includes a chuck 40 that adsorbs the substrate 2. When the substrate 2 is attached to the tape 5, the chuck 40 sucks the substrate 2 through the tape 5. The chuck 40 rotates together with the spindle 10 in a state of sucking the substrate 2. A negative pressure is supplied from the spindle 10 to the suction surface 41 of the chuck 40, which sucks the substrate 2.
In the present specification, the negative pressure refers to a pressure lower than a pressure (for example, atmospheric pressure) inside the substrate processing apparatus 1. The pressure inside the substrate processing apparatus 1 may be the same as the atmospheric pressure, may be lower than the atmospheric pressure, or may be higher than the atmospheric pressure.
The diameter of the chuck 40 is equal to the diameter of the substrate 2 so that the chuck 40 can suck the entirety of the substrate 2. The diameter of the chuck 40 may be equal to or larger than the diameter of the substrate 2, or may be larger than the diameter of the substrate 2.
The chuck 40 includes, for example, a disk-shaped body 42 and a disk-shaped porous body 43 fitted into a recess on one surface of the disk body 42. The number of the porous bodies 43 is 1 in the present embodiment, but may be plural. The plurality of porous bodies 43 are arranged in concentric circles. Negative pressure is supplied to the porous body 43, and the chuck 40 adsorbs the substrate 2 by the negative pressure.
The substrate processing apparatus 1 includes a rotating body 50 that adsorbs the chuck 40. The rotary body 50 is fastened to the main shaft 10 by a bolt or the like. The chuck 40 is attached to the spindle 10 via a rotating body 50. The rotating body 50 rotates together with the spindle 10 in a state of adsorbing the chuck 40. Negative pressure is supplied from the spindle 10 to the suction surface 51 of the suction chuck 40 of the rotating body 50.
The rotor 50 includes, for example, a disk body 52 and an annular porous body 53 fitted into a recess on one surface of the disk body 52. The number of the porous bodies 53 is plural in the present embodiment, but may be 1. The plurality of porous bodies 53 are arranged in concentric circles. Negative pressure is supplied to the porous body 53, and the rotating body 50 adsorbs the chuck 40 by the negative pressure. In addition, a groove space may be formed instead of the porous body 53.
The rotating body 50 and the chuck 40 are each disk-shaped, and the diameter of the rotating body 50 is smaller than that of the chuck 40. The reduction in the area of the suction surface 41 of the chuck 40 can be suppressed, the reduction in the positional stability of the substrate 2 can be suppressed, the moment of inertia of the entire member rotated by the motor M can be reduced, and the capacity of the motor M can be reduced.
The moment of inertia of each member is determined by the diameter, thickness, and the like of each member. In order to reduce the size of the motor M, it is effective to make the diameter of the rotating body 50 smaller than the diameter of the chuck 40 as described above, and it is also effective to reduce the thickness of the chuck 40.
On the other hand, if the thickness of the chuck 40 is small, it is difficult to fasten the chuck 40 to the rotating body 50 with a bolt or the like. This is because the chuck 40 is locally tightened with the bolt, and therefore, the chuck 40 is deformed, and the flatness of the suction surface 41 of the chuck 40 is deteriorated.
According to the present embodiment, since the rotary body 50 sucks the chuck 40, the chuck 40 can be thinned while maintaining the flatness of the suction surface 41 of the chuck 40, and the motor M can be miniaturized. That is, in the present embodiment, the rotating body 50 is disposed between the chuck 40 and the spindle 10 for the purpose of downsizing the motor M.
As shown in fig. 5, a positioning pin 54 is preferably formed on the suction surface 51 of the rotating body 50. The positioning pins 54 are fitted into the positioning holes of the chuck 40, and the center of the rotating body 50 and the center of the chuck 40 are arranged on the extension line of the spindle 10. The arrangement of the positioning pins 54 and the positioning holes may be reversed, and the positioning holes may be formed in the rotating body 50 and the positioning pins 54 may be formed in the chuck 40.
The substrate processing apparatus 1 includes a frame suction member 60 for sucking the frame 3 outside the chuck 40. The frame suction member 60 rotates together with the chuck 40 in a state of sucking the frame 3. The frame 3 and the substrate 2 can be rotated at the same rotational speed, and the twisting of the belt 5 can be suppressed. Negative pressure is supplied from the main shaft 10 to the suction surface 61 of the suction frame 3 of the frame suction body 60.
The frame absorber 60 is attached to, for example, the tip of an arm 62 extending radially outward from the rotating body 50. A plurality of arms 62 are arranged radially, and a frame suction body 60 is attached to the tip of each of the plurality of arms 62. A plurality of frame absorbers 60 are preferably arranged at equal intervals in the circumferential direction of the rotating body 50.
As described above, the substrate processing apparatus 1 includes a plurality of suction members that rotate together with the spindle 10. Specific examples of the suction member include a chuck 40, a rotating body 50, and a frame suction body 60. Negative pressure is supplied from the main shaft 10 to these suction members individually.
Here, as shown in fig. 2, a plurality of rotary flow paths through which gas flows are formed inside the main shaft 10. For example, the 1 st rotation channel 71, the 2 nd rotation channel 72, and the 3 rd rotation channel 73 are formed as rotation channels. The number of the rotary flow paths may be appropriately selected depending on the number of the suction members that rotate together with the spindle 10, and is not limited to 3, and may be two or 4 or more.
Similarly, a plurality of fixed flow paths through which gas flows are formed inside the gas bearing 20. For example, the 1 st fixed channel 81, the 2 nd fixed channel 82, and the 3 rd fixed channel 83 are formed as fixed channels. The number of the fixed flow paths may be appropriately selected according to the number of the suction members that rotate together with the spindle 10, and is not limited to 3, and may be two or 4 or more.
The plurality of fixed flow paths face different rotary flow paths through the gas layer GL. For example, the 1 st rotation channel 71 faces the 1 st fixed channel 81, the 2 nd rotation channel 72 faces the 2 nd fixed channel 82, and the 3 rd rotation channel 73 faces the 3 rd fixed channel 83 with the gas layer GL interposed therebetween.
The thickness of the gas layer GL is controlled to be high precision in order to smoothly rotate the spindle 10, and is controlled to be thin in order to increase the gas pressure of the gas layer GL. Therefore, a plurality of sets of the fixed flow path and the rotary flow path facing each other with an appropriate interval therebetween can be formed, and the flow of the gas can be controlled for each of these sets. This is because the distance between the stationary flow path and the rotary flow path facing each other is narrow, and the gas smoothly flows between the stationary flow path and the rotary flow path. Therefore, the negative pressure can be supplied to the plurality of suction members individually, and suction and release of suction can be performed for each suction member. For example, in a state where the rotating body 50 adsorbs the chuck 40, the chuck 40 can adsorb the substrate 2 or release the adsorption. In addition, in a state where the rotating body 50 adsorbs the chuck 40, the frame adsorbing body 60 can adsorb the frame 3 or release the adsorption.
As shown in fig. 2, the plurality of fixed passages, for example, the 1 st fixed passage 81, the 2 nd fixed passage 82, and the 3 rd fixed passage 83 are open on the inner circumferential surface 20a of the gas bearing 20 at intervals in the axial direction of the gas bearing 20. In fig. 2, reference numeral 81a is an opening of the 1 st fixed channel 81, reference numeral 82a is an opening of the 2 nd fixed channel 82, and reference numeral 83a is an opening of the 3 rd fixed channel 83.
On the other hand, the plurality of rotation flow passages, for example, the 1 st rotation flow passage 71, the 2 nd rotation flow passage 72, and the 3 rd rotation flow passage 73 are opened in the outer peripheral surface 13a of the intermediate shaft 13 at intervals in the axial direction of the intermediate shaft 13, and are opened in an annular shape as a whole in the circumferential direction of the intermediate shaft 13. In fig. 2, reference numeral 71a is an opening of the 1 st rotation flow path 71, reference numeral 72a is an opening of the 2 nd rotation flow path 72, and reference numeral 73a is an opening of the 3 rd rotation flow path 73.
The opening 81a of the 1 st fixed channel 81 faces the opening 71a of the 1 st rotating channel 71, the opening 82a of the 2 nd fixed channel 82 faces the opening 72a of the 2 nd rotating channel 72, and the opening 83a of the 3 rd fixed channel 83 faces the opening 73a of the 3 rd rotating channel 73.
Since the rotary openings 71a, 72a, and 73a are formed in a ring shape, they can always face the fixed openings 81a, 82a, and 83 a. As a result, the supply of the negative pressure can be prevented from being interrupted during the rotation of the main shaft 10.
In the present embodiment, all the fixed flow paths are open to the inner circumferential surface 20a of the gas bearing 20, but 1 or more fixed flow paths may be open to the one axial end surface 20b or the other axial end surface 20c of the gas bearing 20.
Similarly, in the present embodiment, all the rotation flow paths are opened in the outer peripheral surface 13a of the intermediate shaft 13, but 1 or more rotation flow paths may be opened in the one axial end surface 11a of the 1 st rotation shaft 11 or the one axial end surface 12a of the 2 nd rotation shaft 12.
The 1 st fixed flow path 81 and the 1 st rotary flow path 71 form a 1 st negative pressure supply line 91 that supplies a negative pressure to the suction surface 41 of the chuck 40. As shown in fig. 1, the 1 st negative pressure supply line 91 supplies a negative pressure to the suction surface 41 of the chuck 40 through the gas bearing 20, the spindle 10, and the rotating body 50. A 1 st gas aspirator 101 that aspirates gas is provided at one end of the 1 st negative pressure supply line 91. As the 1 st gas aspirator 101, for example, a vacuum pump or an ejector is used. The negative pressure generated by the 1 st gas aspirator 101 is supplied to the suction surface 41 of the chuck 40 through the 1 st negative pressure supply line 91.
A 1 st gas supplier 121 is provided between the 1 st fixed passage 81 of the 1 st negative pressure supply line 91 and the 1 st gas aspirator 101, and the 1 st gas supplier 121 supplies gas toward the adsorption surface 41 of the chuck 40 via a 1 st switching device 111 that switches the flow direction of the gas. The 1 st switching device 111 switches the 1 st fixed passage 81 between a state of being open to the 1 st gas aspirator 101 and closed to the 1 st gas supplier 121 and a state of being closed to the 1 st gas aspirator 101 and open to the 1 st gas supplier 121. As the 1 st switch 111, for example, a three-way switching valve is used. Instead of the three-way switching valve, a plurality of opening and closing valves may be used.
When the adsorption is released, the positive pressure generated by the 1 st gas supplier 121 passes through the 1 st fixed passage 81 and the 1 st rotating passage 71 from the 1 st switcher 111, and is supplied to the adsorption surface 41 of the chuck 40. As a result, the desorption can be reliably performed. Instead of the positive pressure, the same air pressure as the air pressure inside the substrate processing apparatus 1 may be supplied to the suction surface 41 of the chuck 40. Further, a release valve may be provided in the middle of the 1 st negative pressure supply line 91, and the release valve may release the negative pressure and release the adsorption.
The 2 nd fixed flow path 82 and the 2 nd rotating flow path 72 form a 2 nd negative pressure supply line 92 that supplies negative pressure to the suction surface 51 of the rotating body 50. The 2 nd negative pressure supply line 92 supplies a negative pressure to the suction surface 51 of the rotating body 50 through the gas bearing 20 and the main shaft 10. A 2 nd gas aspirator 102 that aspirates gas is provided at one end of the 2 nd negative pressure supply line 92. The negative pressure generated by the 2 nd gas suction device 102 is supplied to the suction surface 51 of the rotating body 50 through the 2 nd negative pressure supply line 92.
A 2 nd gas supplier 122 is provided between the 2 nd fixed passage 82 of the 2 nd negative pressure supply line 92 and the 2 nd gas aspirator 102, and the 2 nd gas supplier 122 supplies gas toward the adsorption surface 51 of the rotating body 50 via a 2 nd switcher 112 that switches the flow direction of the gas. The 2 nd switching device 112 switches the 2 nd fixed passage 82 between a state of being open to the 2 nd gas aspirator 102 and closed to the 2 nd gas supplier 122, and a state of being closed to the 2 nd gas aspirator 102 and open to the 2 nd gas supplier 122.
When the adsorption is released, the positive pressure generated by the 2 nd gas supplier 122 passes through the 2 nd fixed passage 82 and the 2 nd rotating passage 72 from the 2 nd switching device 112, and is supplied to the adsorption surface 51 of the rotating body 50. As a result, the desorption can be reliably performed. Instead of the positive pressure, the same air pressure as the air pressure inside the substrate processing apparatus 1 may be supplied to the suction surface 51 of the rotating body 50. Further, a release valve may be provided in the middle of the 2 nd negative pressure supply line 92, and the release valve may release the negative pressure and release the adsorption.
The 3 rd fixed flow path 83 and the 3 rd rotating flow path 73 form a 3 rd negative pressure supply line 93 that supplies negative pressure to the suction surface 61 of the frame suction body 60. The 3 rd negative pressure supply line 93 supplies a negative pressure to the suction surface 61 of the frame suction body 60 through the gas bearing 20 and the spindle 10. A 3 rd gas aspirator 103 for aspirating gas is provided at one end of the 3 rd negative pressure supply line 93. The negative pressure generated by the 3 rd gas suction unit 103 is supplied to the suction surface 61 of the frame suction body 60 through the 3 rd negative pressure supply line 93.
The 3 rd negative pressure supply line 93 includes a flexible tube 63, and the tube 63 forms a flow path between the rotary body 50 and the frame adsorbent 60. As shown in fig. 5, the pipe 63 projects radially outward from the rotating body 50, for example, and is branched into two at a middle portion thereof, and is attached to the two frame absorbers 60. The arrangement and number of the tubes 63 are appropriately selected according to the arrangement and number of the frame absorbers 60.
A 3 rd gas supplier 123 is provided between the 3 rd fixed flow path 83 of the 3 rd negative pressure supply line 93 and the 3 rd gas aspirator 103, and the 3 rd gas supplier 123 supplies gas toward the adsorption surface 61 of the frame adsorbent 60 via a 3 rd switcher 113 that switches the flow direction of the gas. The 3 rd switching device 113 switches the 3 rd fixed passage 83 between a state of being open to the 3 rd gas aspirator 103 and closed to the 3 rd gas supplier 123 and a state of being closed to the 3 rd gas aspirator 103 and open to the 3 rd gas supplier 123.
When the adsorption is released, the positive pressure generated by the 3 rd gas supplier 123 passes through the 3 rd fixed flow path 83 and the 3 rd rotating flow path 73 from the 3 rd switching device 113, and is supplied to the adsorption surface 61 of the frame adsorbent 60. As a result, the desorption can be reliably performed. Instead of the positive pressure, the same air pressure as the air pressure inside the substrate processing apparatus 1 may be supplied to the suction surface 61 of the frame suction member 60. Further, a release valve may be provided in the middle of the 3 rd negative pressure supply line 93, and the release valve may release the negative pressure and release the adsorption.
The substrate processing apparatus of the present invention has been described above, but the present invention is not limited to the above-described embodiments and the like. Various changes, modifications, substitutions, additions, deletions, and combinations may be made within the scope of the claims. These also certainly belong to the scope of protection of the present invention.
The substrate 2 is not limited to a silicon wafer. The substrate 2 may be a silicon carbide wafer, a gallium nitride wafer, a gallium oxide wafer, or the like. The substrate 2 may be a glass substrate. The same applies to the supporting substrate to which the substrate 2 is bonded.
Claims (9)
1. A substrate processing apparatus is characterized in that,
the substrate processing apparatus includes:
a spindle that rotates the substrate; and
a gas bearing for rotatably supporting the spindle through a gas layer,
a plurality of rotary flow paths through which gas flows are formed inside the main shaft, a plurality of fixed flow paths through which gas flows are formed inside the gas bearing,
the plurality of fixed flow paths are opposed to different rotary flow paths with the gas layer interposed therebetween.
2. The substrate processing apparatus according to claim 1,
the substrate processing apparatus includes:
a chuck that adsorbs the substrate; and
a rotating body that adsorbs the chuck,
the chuck is attached to the spindle via the rotating body,
one of the fixed flow paths and one of the rotary flow paths form a 1 st negative pressure supply line that supplies a negative pressure to the suction surface of the chuck,
the other of the fixed flow paths and the other of the rotary flow paths form a 2 nd negative pressure supply line that supplies a negative pressure to the suction surface of the rotary body.
3. The substrate processing apparatus according to claim 2,
the rotating body and the chuck are respectively in the shape of a disk,
the diameter of the rotating body is smaller than that of the chuck.
4. The substrate processing apparatus according to claim 2 or 3,
the diameter of the chuck is larger than or equal to that of the substrate.
5. The substrate processing apparatus according to claim 2 or 3,
a 1 st gas aspirator to aspirate gas is provided at one end of the 1 st negative pressure supply line,
a 1 st gas supplier is provided between the 1 st gas aspirator and the fixed flow path of the 1 st negative pressure supply line, and the 1 st gas supplier supplies gas toward the adsorption surface of the chuck via a 1 st switch that switches a flow direction of the gas.
6. The substrate processing apparatus according to claim 2 or 3,
the substrate is adhered to a tape covering an opening of the annular frame,
the substrate processing apparatus further includes a frame suction member that sucks the frame outside the chuck and rotates together with the chuck,
the further fixed flow path and the further rotary flow path form a 3 rd negative pressure supply line that supplies a negative pressure to the adsorption surface of the frame adsorbent.
7. The substrate processing apparatus according to claim 1,
the substrate is adhered to a tape covering an opening of the annular frame,
the substrate processing apparatus includes:
a chuck that adsorbs the substrate and rotates together with the spindle; and
a frame suction body sucking the frame at an outer side of the chuck and rotating together with the chuck,
one of the fixed flow paths and one of the rotary flow paths form a negative pressure supply line that supplies a negative pressure to the suction surface of the chuck,
the other of the fixed flow paths and the other of the rotary flow paths form a negative pressure supply line for supplying a negative pressure to the adsorption surface of the frame adsorbent.
8. The substrate processing apparatus according to claim 1 or 2,
the main shaft includes: 1 st rotation axis; a 2 nd rotation axis; and an intermediate shaft located between the 1 st and 2 nd rotation shafts, having a diameter smaller than diameters of the 1 st and 2 nd rotation shafts,
the gas bearing is formed in a cylindrical shape, and the gas layer is formed between one axial end surface of the 1 st rotating shaft, one axial end surface of the 2 nd rotating shaft, and an outer peripheral surface of the intermediate shaft.
9. The substrate processing apparatus according to claim 8,
the plurality of fixed flow paths open to an inner peripheral surface of the gas bearing at intervals in an axial direction of the gas bearing,
the plurality of rotation flow passages open to an outer peripheral surface of the intermediate shaft at intervals in an axial direction of the intermediate shaft, and are annularly open in an entire circumferential direction of the intermediate shaft.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2019-107427 | 2019-06-07 | ||
| JP2019107427A JP7333715B2 (en) | 2019-06-07 | 2019-06-07 | Substrate processing equipment |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN212659525U true CN212659525U (en) | 2021-03-05 |
Family
ID=73743559
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202020952391.8U Active CN212659525U (en) | 2019-06-07 | 2020-05-29 | Substrate processing apparatus |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JP7333715B2 (en) |
| KR (1) | KR20200002727U (en) |
| CN (1) | CN212659525U (en) |
| TW (1) | TWM608263U (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114927459B (en) * | 2022-07-19 | 2022-11-15 | 上海隐冠半导体技术有限公司 | Multi-gas path adsorption device |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62193704A (en) | 1986-02-20 | 1987-08-25 | Hitachi Ltd | Ultra precision lathe |
| JPS62238634A (en) * | 1986-04-10 | 1987-10-19 | Hitachi Electronics Eng Co Ltd | Surface inspecting apparatus |
| US4726689A (en) | 1986-10-22 | 1988-02-23 | Eclipse Ion Technology, Inc. | Linear gas bearing with integral vacuum seal for use in serial process ion implantation equipment |
| JP2000348429A (en) | 1999-06-04 | 2000-12-15 | Oiles Ind Co Ltd | Work mounting table using porous static-pressure gas bearing |
| JP3552029B2 (en) * | 1999-06-30 | 2004-08-11 | 光洋機械工業株式会社 | Rotary axis device |
| JP4813831B2 (en) * | 2005-07-05 | 2011-11-09 | 積水化学工業株式会社 | Surface treatment stage structure |
| CN111065488B (en) | 2017-09-13 | 2021-10-08 | 佳能半导体制造设备股份有限公司 | Processing device |
-
2019
- 2019-06-07 JP JP2019107427A patent/JP7333715B2/en active Active
-
2020
- 2020-05-29 CN CN202020952391.8U patent/CN212659525U/en active Active
- 2020-05-29 TW TW109206658U patent/TWM608263U/en unknown
- 2020-06-04 KR KR2020200001935U patent/KR20200002727U/en active Search and Examination
Also Published As
| Publication number | Publication date |
|---|---|
| KR20200002727U (en) | 2020-12-16 |
| JP7333715B2 (en) | 2023-08-25 |
| TWM608263U (en) | 2021-03-01 |
| JP2020202268A (en) | 2020-12-17 |
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