JP2003332285A - Wafer treatment apparatus and method - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a wafer treatment apparatus and method in which a part of a surface of a wafer is uniformly and precisely treated with a treatment liquid. <P>SOLUTION: A wafer treatment apparatus (1) or the like for treating a desired annular area on the surface of the wafer has treatment liquid feeding parts (8, 10, 50) for feeding the treatment liquid for treating the surface of a wafer (A) held to be rotated within an approximately horizontal plane to the desired annular area on a surface (A1) of the wafer. Each treatment liquid feeding part has an annular guide surface (50) extending to a peripheral edge near an inner peripheral edge located to face an inner peripheral edge of the desired annular area on the surface of the wafer such that the peripheral edge forms a most expanded diameter portion. The annular guide surface (50) is rotated concentrically with the wafer (A) and the treatment liquid is fed to the annular guide surface (50). <P>COPYRIGHT: (C)2004,JPO

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a substrate processing apparatus and method, and more particularly to a substrate processing apparatus and method capable of processing a part of the surface of a substrate with a processing liquid.

[0002]

2. Description of the Related Art In the process of manufacturing a semiconductor substrate, the diffusion process, which occupies the center of the so-called pre-process, is conventionally roughly divided into a film forming process and a lithographic process. The structure of the substrate has been determined. Furthermore, a substrate cleaning process has been performed between these processes. Among the above-mentioned steps, the film forming step and the cleaning step are performed using, for example, a conventionally known single-wafer type substrate processing apparatus, and the processing liquid is kept above the substrate while being held in a substantially horizontal plane in a non-contact manner. The processing liquid is supplied to the center of the upper surface of the substrate and the centrifugal force of the rotating substrate is used to radially diffuse the processing liquid, so that the entire upper surface of the substrate is processed with the processing liquid.

On the other hand, recently, there has been a demand for treating a part of the surface of the substrate with a treatment liquid. This
Two examples will be described below.

First, the first example will be described. In order to ensure high operating speed of miniaturized MOS logic LSI,
Attempts have been made to reduce the wiring resistance by wiring a MOS logic LSI with copper. Such copper wiring is formed by sputtering or metal CV in the film forming process of the previous process.
It is performed by forming a copper film by D or the like. At that time, while a copper film is formed on the front surface on which the element is formed, copper ions are spread to the peripheral annular portion of the front surface where the element is not formed, the bevel portion of the substrate and the back surface. There is a problem of complicated adhesion. That is, Si crystal, SiO ₂
Copper atoms, which are a typical impurity that diffuses at high speed, degrade device characteristics and cause cross-contamination of equipment and facilities. Therefore, in the manufacture of a miniaturized MOS logic LSI, after the film forming step, the peripheral annular portion of the front surface where no element is formed, the beveled portion of the substrate, and the copper attached to the back surface are sufficiently cleaned. There is a need.

Using the above-mentioned single wafer processing apparatus,
The back surface of the substrate is arranged upward and the front surface of the substrate on which the element is formed is arranged downward, and the substrate is held while protecting the front surface of the substrate. It is possible to treat the entire back surface of the substrate with such treatment liquid. However, it is difficult to uniformly and precisely process the bevel portion and the annular region near the outer peripheral edge of the downwardly arranged front surface. In particular, it is the most difficult to clean the annular region of the front surface of the substrate in the vicinity of the outer peripheral edge where elements are not formed, and there is a strong demand for uniform and precise treatment of this portion. The current situation is that it has not been completely resolved.

Next, a second example will be described. When a resist film is formed on a substrate and a predetermined process is performed and then the resist film is removed, a residue of the resist may remain attached near the outer peripheral edges of both surfaces of the substrate. If such residual residue of the resist adheres to the vicinity of the outer peripheral edges of both surfaces of the substrate, the lower surface of the substrate is not horizontally arranged in the patterning process (photo process) in the subsequent process, and the patterning accuracy is deteriorated. At the same time, regarding the upper surface of the substrate,
When clamping the substrate in the subsequent dry or wet etching process, it causes dust generation. Therefore, it is necessary to remove the residual residue of the resist in the annular region near the outer peripheral edges of the upper and lower surfaces of the substrate.

With respect to these demands, JP-A-9-92637 and JP-A-10-229062 disclose a substrate processing apparatus for processing a desired annular region near the outer peripheral edges of the upper and lower surfaces of a substrate with a processing liquid. Is disclosed. This apparatus has a treatment liquid injection nozzle for supplying a treatment liquid for treating the surface of a substrate held rotatably in a substantially horizontal plane to a desired annular region near the outer peripheral edge of the substrate. After treating the upper surface of the substrate with the treatment liquid, another treatment liquid is directed to the portions near the outer peripheral edges of the upper and lower surfaces of the substrate in order to remove unnecessary thin films formed near the outer peripheral edge of the substrate. By jetting from the liquid jet nozzle, the vicinity of the outer peripheral edge of the substrate is treated with the treatment liquid to remove an unnecessary thin film. The apparatus is also capable of simultaneously processing the desired annular regions near the outer perimeter of both the top and bottom surfaces.

Further, Japanese Patent Application Laid-Open No. 11-8192 discloses a substrate processing apparatus for supplying a processing liquid to a desired annular region near the outer peripheral edge of a substrate. In this device, while the substrate is rotating at a low speed or while it is stopped, the processing liquid supplied to the upper surface of the substrate is caused to sneak into the lower surface of the substrate, and an annular liquid film utilizing the capillary phenomenon is brought close to the lower surface of the substrate. A desired annular region near the outer peripheral edge of the lower surface of the substrate is treated with the treatment liquid by forming the treatment liquid from the inside of the annular liquid film by forming it between the cylindrical body and the lower surface of the substrate. Processing.

[0009]

However, in the former apparatus, since the processing liquid is supplied to the vicinity of the outer peripheral edge of the substrate by jetting, for example, uniform and precise processing such as that achieved by processing utilizing centrifugal force is performed. Processing cannot be performed near the outer periphery of the substrate. In addition, since the processing liquid is sprayed and collided with the upper and lower surfaces of the substrate, there is a problem that only the desired annular region near the outer peripheral edges of the upper and lower surfaces of the substrate cannot be precisely processed.

Further, in the latter device, since the lower surface is processed by causing the processing liquid supplied to the upper surface to circulate around the lower surface, the processing is performed only while the substrate is rotating at a low speed or while the substrate is stopped. However, even if the rotation speed is low, the sensitivity of the wraparound amount of the processing liquid to the number of rotations of the substrate is too high. Therefore, uniform and precise processing such as that achieved by processing using centrifugal force is performed. There is a problem that control cannot be performed near the outer peripheral edge of the lower surface of the substrate.

In view of the above demands, the present applicant has made extensive studies on uniformly and precisely treating a part of the surface of the substrate, particularly a desired annular region including the outer peripheral edge of the substrate. When a single substrate is processed, the front surface of the substrate may be arranged on the lower surface, or it may be arranged on the upper surface. Further, a part of the surface of the substrate to be processed may be the lower surface or the upper surface. Therefore, it is desirable that a part of the lower surface of the substrate can be uniformly and precisely processed with the processing liquid, and that a part of the upper surface of the substrate can be uniformly and precisely processed with the processing liquid. Further, it is desirable that a part of the upper surface and the lower surface of the substrate can be uniformly or precisely treated with the treatment liquid simultaneously or continuously.

Therefore, an object of the present invention is to provide a substrate processing apparatus and method capable of uniformly and precisely processing a part of the surface of a substrate with a processing liquid.

Another object of the present invention is to provide a substrate processing apparatus and method capable of supplying a processing liquid from the lower side to the lower surface of a substrate to uniformly and precisely process a desired annular region on the lower surface of the substrate. Especially.

Another object of the present invention is to provide a substrate processing apparatus and method capable of uniformly and precisely processing a desired annular region on the upper surface of a substrate.

Another object of the present invention is to provide a substrate processing apparatus and method capable of uniformly or precisely processing a desired annular region on the upper surface of the substrate and a desired annular region on the lower surface of the substrate simultaneously or continuously. To do.

[0016]

In order to achieve the above object, a substrate processing apparatus according to the present invention provides a processing liquid for processing a surface of a substrate rotatably held in a substantially horizontal plane to a desired ring shape on the surface of the substrate. In a substrate processing apparatus for processing a desired annular area on a surface of a substrate, the processing liquid supplying means having a processing liquid supplying means for supplying the area to the area, and the processing liquid supplying means is disposed inside an inner peripheral edge of the desired annular area on the surface of the substrate. There is an annular guide surface that extends to the edge near the edge and the edge forms a maximum expanded diameter portion. The annular guide surface is rotatable concentrically with the substrate, and the annular guide surface is filled with the processing liquid. It is characterized by being supplied.

In the present invention thus constructed,
A treatment liquid for treating the surface of the substrate is supplied to an annular guide surface that can rotate concentrically with the substrate. The treatment liquid receives a centrifugal force due to the rotation of the annular guide surface, moves along the annular guide surface, and is guided to an end peripheral edge of the annular guide surface that forms the largest diameter portion. In addition, when the annular guide surface is arranged above the substrate,
When the treatment liquid is guided to the peripheral edge of the annular guide surface only by gravity, the annular guide surface may not be rotated. Next, the processing liquid is supplied to the inner peripheral edge portion of the desired annular region on the surface of the substrate that is arranged in the vicinity of the end peripheral edge of the annular guide surface. Then, the treatment liquid receives a centrifugal force due to the rotation of the substrate, and moves outward in a swirling flow along the surface of the substrate held in a substantially horizontal plane. In this way, the desired annular region of the substrate is processed. As a result, it is possible to uniformly and precisely process the desired annular region of the substrate with the processing liquid.

In order to achieve the above object, the substrate processing apparatus according to the present invention is a processing liquid for supplying a processing liquid for processing the lower surface of a substrate held rotatably in a substantially horizontal plane to the lower surface of the substrate. Supply means and limiting means for limiting the supply of the processing liquid to the lower surface of the substrate to a desired annular region on the lower surface of the substrate,
In a substrate processing apparatus for processing a desired annular region on the lower surface of a substrate, the processing liquid supply means is rotatable concentrically with the substrate and spreads outward in the radial direction of the substrate from the lower side of the substrate toward the lower surface of the substrate. It has a trumpet-shaped guide surface that extends to the end peripheral edge near the inner peripheral edge that is arranged so as to face the inner peripheral edge of the desired annular region on the lower surface of the substrate, and the processing liquid is supplied onto this trumpet-shaped guide surface for control. The means are characterized in that they are constituted by the peripheral edge of the trumpet-shaped guide surface.

In the present invention thus constructed,
A processing liquid for processing the lower surface of the substrate is supplied onto a trumpet-shaped guide surface that can rotate concentrically with the substrate. The treatment liquid receives a centrifugal force due to the rotation of the trumpet-shaped guide surface, countering gravity,
From the lower side of the substrate to the lower surface of the substrate, it moves upward along the trumpet-shaped guide surface that expands radially outward of the substrate, and is guided to the end peripheral edge of the trumpet-shaped guide surface.
It is supplied to the inner peripheral edge portion of a desired annular region on the lower surface of the substrate which is arranged in the vicinity of the peripheral edge of the trumpet-shaped guide surface. Then
The treatment liquid receives a centrifugal force due to the rotation of the substrate, and moves in a swirling flow radially outward along the lower surface of the substrate held in a substantially horizontal plane. In this way, the processing liquid can be supplied from below the substrate to the lower surface of the substrate. Further, the supply of the processing liquid to the lower surface of the substrate is limited to the outside of the inner peripheral edge portion of the desired annular area, and as a result, the desired annular area on the lower surface of the substrate can be uniformly and precisely processed by the processing liquid. .

In the present invention, preferably, further, a rotatable central disk portion whose upper surface forms a chuck surface for holding the substrate from below, and a rotating disk which is spaced apart from and concentric with the central disk portion. A possible outer annular portion, and the trumpet-shaped guide surface is formed in the outer annular portion so as to face the annular space formed between the central disk portion and the outer annular portion, and the treatment liquid supply means is The processing liquid supply port for supplying the processing liquid is further provided on the trumpet-shaped guide surface, and the processing liquid supply port is arranged in a fixed position in the annular space.

In the present invention thus constructed,
The substrate is held from below by a chuck surface formed on the upper surface of the central disk portion. Further, an annular space is formed between the central disk portion and the outer annular portion, and the treatment liquid is supplied onto the trumpet-shaped guide surface formed in the outer annular portion so as to face the annular space. The treatment liquid supply port for supplying the treatment liquid onto the trumpet-shaped guide surface is separated from the rotatable central disk portion and the outer annular portion and is disposed in a fixed position in the annular space. It is not necessary to provide a sliding part that can become a space between the processing liquid supply means and the central disk part or the outer annular part, and it is possible to simplify the structure of the substrate processing apparatus and to prevent dust generation due to sliding. An environment can be formed.

In the present invention, preferably, a plurality of processing liquid supply ports are provided in the circumferential direction of the annular space.

In the present invention thus constructed,
Since a plurality of treatment liquid supply ports are provided in the circumferential direction of the annular space, the treatment liquid supply efficiency can be improved.

In the present invention, different processing liquids are preferably supplied from different processing liquid supply ports.

In the present invention thus constructed,
After supplying one processing liquid from one processing liquid supply port, subsequently, another processing liquid can be supplied from another processing liquid supply port. For example, after treating a desired annular region on the lower surface of the substrate with a chemical solution, the same desired annular region can be subsequently washed with ultrapure water. Moreover, since different treatment liquids are supplied from different treatment liquid supply ports, it is possible to prevent contamination of the treatment liquid supply paths that occurs when different treatment liquids are supplied from one treatment liquid supply port.

In the present invention, vane means are preferably provided on the trumpet-shaped guide surface for assisting in guiding the processing liquid to the lower surface of the substrate.

In the present invention thus constructed,
In addition to the centrifugal force due to the rotation of the trumpet-shaped guide surface, the propulsive force by the blade means provided on the trumpet-shaped guide surface is applied to the processing liquid, so that it is against the gravity from the lower side of the substrate toward the lower surface of the substrate. It is possible to facilitate guiding the processing liquid upward.

In the present invention, preferably, the central disk portion has a substrate floating mechanism for floating and holding the substrate from the chuck surface.

In the present invention thus constructed,
Since the substrate is floated from the chuck surface and held, dust is prevented when holding the substrate, and a favorable ambient environment can be formed.

In the present invention, preferably, the central disk portion has a gas supply means for supplying a gas flowing radially outward from the central portion of the lower surface of the substrate.

In the present invention thus constructed,
The gas supplied by the gas supply means of the central disk is
Since it flows radially outward from the center of the lower surface of the substrate, the processing liquid supplied to the inner peripheral edge portion of the desired annular region on the lower surface of the substrate receives the radially outward force of the gas. This surely prevents the processing liquid from being supplied more inward than the inner peripheral edge of the desired annular region.

In order to achieve the above object, the substrate processing apparatus according to the present invention is a processing liquid for supplying a processing liquid for processing the upper surface of a substrate held rotatably in a substantially horizontal plane to the upper surface of the substrate. Supply means and limiting means for limiting the supply of the processing liquid to the upper surface of the substrate to a desired annular region on the upper surface of the substrate,
In the substrate processing apparatus for processing a desired annular region on the upper surface of the substrate, the processing liquid supply means expands radially outward of the substrate from the upper side of the substrate toward the upper surface of the substrate to obtain the desired upper surface of the substrate. It has a trumpet-shaped guide surface that extends to the end peripheral edge near the inner peripheral edge that is arranged opposite to the inner peripheral edge of the annular region, and the processing liquid is supplied onto this trumpet-shaped guide surface, and the control means can rotate concentrically with the substrate. It is characterized in that it is constituted by an edge of a trumpet-shaped guide surface.

In the present invention thus constructed,
A treatment liquid for treating the upper surface of the substrate is supplied to the trumpet-shaped guide surface. The processing liquid moves downward due to gravity from the upper side of the substrate toward the upper surface of the substrate along a trumpet-shaped guide surface that expands radially outward of the substrate, and is guided to the edge of the trumpet-shaped guide surface. In order to move the processing liquid downward, the trumpet-shaped guide surface may be rotated to exert a centrifugal force on the processing liquid.
Then, when the trumpet-shaped guide surface is rotated, the treatment liquid is blown out by the centrifugal force due to the rotation of the edge of the trumpet-shaped guide surface, and the treatment liquid is deposited on the upper surface of the substrate opposite to the edge of the trumpet-shaped guide surface. It is supplied to the inner peripheral edge of the annular region. Then, the processing liquid receives a centrifugal force due to the rotation of the substrate, and moves in a swirling flow radially outward along the upper surface of the substrate held in a substantially horizontal plane. In this way, the supply of the processing liquid to the upper surface of the substrate is restricted outward in the radial direction with respect to the inner peripheral portion of the desired annular region, and as a result, the processing liquid causes a uniform and precise formation of the desired annular region on the upper surface of the substrate. Processing becomes possible.

In order to achieve the above object, the substrate processing apparatus according to the present invention is a processing liquid for supplying a processing liquid for processing the upper surface of a substrate held rotatably in a substantially horizontal plane to the upper surface of the substrate. Supply means and limiting means for limiting the supply of the processing liquid to the upper surface of the substrate to a desired annular region on the upper surface of the substrate,
In the substrate processing apparatus for processing the desired annular region on the upper surface of the substrate, the processing liquid supply means is provided on the upper surface of the substrate up to the annular exit orifice near the inner peripheral edge of the desired annular region on the upper surface of the substrate. On the other hand, there is an annular flow channel that extends obliquely downward and outward in the radial direction, the processing liquid is supplied to this annular flow channel, and the limiting means is constituted by an annular outlet orifice of the annular flow channel that can rotate concentrically with the substrate. It is characterized by being done.

In the present invention thus constructed,
A treatment liquid for treating the upper surface of the substrate is supplied to the annular channel.
The gravity of the processing liquid moves through the annular flow path towards the annular outlet orifice. In order to move the processing liquid, the annular flow path may be rotated concentrically with the substrate to apply a centrifugal force to the processing liquid. Then, when the annular flow path is rotated, the processing liquid is rotated by the centrifugal force of the annular exit orifice, so that the processing liquid is slanted downward with respect to the upper surface of the substrate and along the annular flow path extending outward in the radial direction. The processing liquid is ejected to the inner peripheral edge portion of the desired annular region on the upper surface of the substrate, which is opposed to the annular outlet orifice. Then, the processing liquid receives a centrifugal force due to the rotation of the substrate, and moves in a swirling flow radially outward along the upper surface of the substrate held in a substantially horizontal plane. In this way, the supply of the processing liquid to the upper surface of the substrate is restricted outward in the radial direction with respect to the inner peripheral portion of the desired annular region, and as a result, the processing liquid causes a uniform and precise formation of the desired annular region on the upper surface of the substrate. Processing becomes possible.

In the present invention, preferably, the processing liquid supply means has an upper surface side rotating body which is disposed above the substrate with a space from the substrate and is rotatable concentrically with the substrate. An inner rotating portion and an outer annular rotating portion that is spaced apart from the inner rotating portion and surrounds the inner rotating portion,
The annular outlet orifice and the annular flow path are formed between the inner rotating part and the outer rotating part, and the processing liquid supply means further has a processing liquid supply port for supplying the processing liquid to the annular flow path,
The processing liquid supply port is fixedly arranged so as to face the annular flow path.

In the present invention thus constructed,
The treatment liquid is guided to the annular outlet orifice through an annular flow path formed between the inner rotating part and an outer annular rotating part that is spaced apart from and surrounds the inner rotating part. Further, since the processing liquid supply port for supplying the processing liquid to the annular flow path is separated from the rotatable upper surface side rotating body and is fixedly disposed so as to face the annular flow path, the source of contamination is generated. Since it is not necessary to provide a sliding part that can become a gap between the processing liquid supply port and the upper surface side rotating body, the structure of the substrate processing apparatus can be simplified, and a favorable surrounding environment without dust generation due to sliding can be achieved. Can be formed.

In the present invention, preferably, the upper surface side rotating body further has an intermediate annular rotating portion arranged between the inner rotating portion and the outer annular rotating portion and at a distance from them, and the inner rotating portion is rotated. A first annular outlet orifice and an annular passage between the intermediate portion and the intermediate annular rotating portion, and a second annular outlet orifice and an annular passage between the intermediate annular rotating portion and the outer rotating portion. .

In the present invention thus constructed,
Two sets of annular exit orifices and annular channels are formed. Accordingly, by selecting the annular flow path for supplying the processing liquid, it is possible to select the position of the inner peripheral edge of the desired annular region on the upper surface of the substrate to which the processing liquid is supplied. As a result, the range of the desired annular region on the upper surface of the substrate to be treated with the treatment liquid can be easily changed. Further, it becomes possible to perform continuous treatment of the chemical liquid treatment and the cleaning by utilizing the two annular flow passages and the annular outlet orifice. For example, after supplying the chemical solution to the outer annular flow path to treat the desired annular area with the chemical solution, subsequently supplying pure water to the inner annular flow path to include the annular area treated with the chemical solution. A large desired annular area can be washed with pure water. Furthermore, since different processing liquids can be supplied from different annular flow paths, it is possible to prevent contamination of the annular flow paths that occurs when different processing liquids are supplied from one annular flow path.

In the present invention, preferably, a plurality of processing liquid supply ports are provided.

In the present invention thus constructed,
Since different treatment liquids can be supplied from different treatment supply ports, a desired treatment liquid can be selected by selecting the treatment liquid supply port. Further, it becomes possible to continuously perform substrate processing using different processing liquids.

In the present invention, preferably, the upper surface side rotating body is relatively movable in the vertical direction with respect to the substrate.

In the present invention thus constructed,
The position of the inner peripheral edge of the desired annular region can be finely adjusted. Specifically, the processing liquid supplied obliquely downward from the annular outlet orifice arranged near the inner peripheral edge of the desired annular region on the upper surface of the substrate along the annular flow path toward the upper surface of the substrate is the substrate. The radial position reaching the top surface of the substrate varies depending on the distance between the annular exit orifice and the top surface of the substrate. Therefore, by moving the upper-side rotor relative to the substrate in the vertical direction, the distance between the annular outlet orifice and the upper surface of the substrate is changed, and the position of the inner peripheral edge of the desired annular region can be finely adjusted. You can do it. As a result, it is possible to easily deal with the processing of the desired annular region of the substrate desired by the user.

In the present invention, preferably, the inner rotating portion has a gas supply means for supplying a gas flowing radially outward from the center of the upper surface of the substrate.

In the present invention thus constructed,
Since the gas supplied by the gas supply means flows radially outward from the center of the upper surface of the substrate, the processing liquid supplied to the inner peripheral edge portion of the desired annular region on the upper surface of the substrate is radially moved by the gas. Due to the outward force, the supply of the processing liquid to the upper surface of the substrate is surely restricted to the radial outer side than the inner peripheral edge of the desired annular region.

In the present invention, preferably, the upper surface side rotating body holds the substrate rotatably in a substantially horizontal direction.

In the present invention having such a configuration,
Since the substrate can be held from above and it is not necessary to hold the substrate from below, the substrate processing apparatus can have a simple structure.

In the present invention, preferably, further, a holding table for holding the substrate from below is provided, and the holding table has a promoting means for promoting the sneak of the processing liquid from the upper surface to the lower surface of the substrate and the upper surface of the substrate. The push-back means that pushes back the processing liquid that has flowed to the lower surface of the substrate, and the control means that controls the accelerating means and the push-back means so as to adjust the radial position of the processing liquid that goes around to the lower surface of the substrate.

In the present invention thus constructed,
The processing liquid that has processed the desired annular region on the upper surface of the substrate wraps around around on the lower surface of the substrate. The accelerating unit promotes the sneak of the processing liquid to the lower surface, and the processing liquid spilled onto the lower surface of the substrate is pushed back by the pushing-back unit. By controlling the accelerating means and the pushing-back means, the radial position where the processing liquid wraps around the lower surface of the substrate is adjusted, and not only the desired annular area on the upper surface of the substrate is processed but also the desired annular area on the lower surface of the substrate is processed at the same time. It becomes possible to do.

In order to achieve the above object, the substrate processing apparatus according to the present invention is a lower surface processing for supplying a processing liquid for processing the lower surface of a substrate held rotatably in a substantially horizontal plane to the lower surface of the substrate. Liquid supply means, lower surface limiting means for limiting the supply of the processing liquid to the lower surface of the substrate to a desired annular region on the lower surface of the substrate, and upper surface processing liquid for supplying the processing liquid for processing the upper surface of the substrate to the upper surface of the substrate A supply means and an upper surface limiting means for restricting the supply of the processing liquid to the upper surface of the substrate to a desired annular area of the upper surface of the substrate, and the desired annular area of the lower surface of the substrate and the desired annular area of the upper surface of the substrate are simultaneously provided. Alternatively, in the substrate processing apparatus for continuously processing, the lower surface processing liquid supply means is rotatable concentrically with the substrate and expands radially outward of the substrate from the lower side of the substrate toward the lower surface of the substrate, Desired annular area on the underside of It has a trumpet-shaped guide surface that extends to an end peripheral edge near the inner peripheral edge that is arranged to face the inner peripheral edge, and the processing liquid for processing the lower surface of the substrate is supplied onto the trumpet-shaped guide surface. The upper surface processing liquid supply means is constituted by the end peripheral edge of the guide surface, and the upper surface processing liquid supply means is obliquely downward to the upper surface of the substrate and has a radius up to an annular outlet orifice near the inner peripheral edge of the upper surface of the substrate opposite to the inner peripheral edge of the desired annular region. A processing liquid for processing the upper surface of the substrate is supplied to the annular flow path, and the upper surface limiting means is constituted by an annular outlet orifice rotatable concentrically with the substrate. It has a feature.

In the substrate processing apparatus according to the present invention configured as described above, the characteristics of the substrate processing apparatus for processing the desired annular area on the lower surface of the substrate and the substrate for processing the desired annular area on the upper surface of the substrate described above. Since it has the features of the processing apparatus, both the desired annular region on the lower surface of the substrate and the desired annular region on the upper surface of the substrate can be processed simultaneously or successively.

In the present invention, preferably, the treatment liquid for treating the upper surface of the substrate and the treatment liquid for treating the lower surface of the substrate are the same.

In the present invention having such a configuration,
The same type of treatment can be applied to the desired annular region on the upper surface of the substrate and the desired annular region on the lower surface of the substrate simultaneously or successively.

Further, in the present invention, preferably, the treatment liquid for treating the upper surface of the substrate is different from the treatment liquid for treating the lower surface of the substrate.

In the present invention having such a configuration,
Different types of treatments can be applied simultaneously or sequentially to the desired annular region on the upper surface of the substrate and the desired annular region on the lower surface of the substrate.

In order to achieve the above object, the substrate processing method according to the present invention is a substrate processing method for processing a desired annular region on the surface of a substrate, wherein the substrate is rotated while being held in a substantially horizontal plane, Arranging an annular guide surface concentric with the substrate to an edge near the inner edge of the surface of the substrate opposite to the inner edge of the desired annular region and forming the edge having the largest expanded diameter portion; The step of guiding the treatment liquid for treating the surface of the substrate along the annular guide surface to the peripheral edge thereof and supplying the treatment liquid to the inner peripheral edge of the desired annular region on the surface of the substrate, and utilizing the centrifugal force acting on the treatment liquid. And treating the desired annular region of the surface of the substrate.

In order to achieve the above object, the substrate processing method according to the present invention is a method for processing a desired annular region on the lower surface of a substrate, wherein the substrate is rotated while being held in a substantially horizontal plane. And a trumpet-shaped guide surface that expands outward in the radial direction of the substrate toward the lower surface of the substrate and extends to an end peripheral edge in the vicinity of the inner peripheral edge of the desired annular region of the lower surface of the substrate that is arranged to face the inner peripheral edge. Using the centrifugal force that acts on the processing liquid, the steps of arranging them concentrically, supplying the processing liquid for processing the lower surface of the substrate onto the trumpet-shaped guide surface, rotating the trumpet-shaped guide surface concentrically with the substrate, and Then, the process liquid is guided from the lower side of the substrate to the end peripheral edge of the trumpet-shaped guide surface, and is supplied to the inner peripheral edge portion of the desired annular region on the lower surface of the substrate, and utilizing the centrifugal force acting on the process liquid, The desired annular area on the bottom surface of the substrate It is characterized by having the steps of management, the.

In order to achieve the above object, the substrate processing method according to the present invention is a method for processing a desired annular region on the upper surface of a substrate, wherein the substrate is rotated while being held in a substantially horizontal plane. And an annular flow channel extending obliquely downward and radially outward with respect to the upper surface of the substrate and concentrically with the substrate up to an annular outlet orifice near the inner peripheral edge of the inner peripheral edge of the desired annular region on the upper surface of the substrate. And the step of guiding the processing liquid for processing the upper surface of the substrate to the annular outlet orifice through the annular flow path, and utilizing the centrifugal force acting on the processing liquid, the inner peripheral edge of the desired annular region on the upper surface of the substrate. And treating the desired annular region of the upper surface of the substrate.

In order to achieve the above object, the substrate processing method according to the present invention is a substrate processing method for simultaneously or continuously processing a desired annular region on the upper surface of the substrate and a desired annular region on the lower surface of the substrate. , The step of rotating the substrate while holding it in a substantially horizontal plane, and the step of expanding the diameter radially outward of the substrate toward the lower surface of the substrate so as to face the inner peripheral edge of the desired annular region of the lower surface of the substrate. Arranging a trumpet-shaped guide surface extending to a peripheral edge near the substrate concentrically, supplying a processing liquid for treating the lower surface of the substrate onto the trumpet-shaped guide surface, and concentrating the trumpet-shaped guide surface with the substrate. The step of rotating and the step of guiding the processing liquid from the lower side of the substrate to the end peripheral edge of the trumpet-shaped guide surface by utilizing the centrifugal force acting on the processing liquid, and supplying it to the inner peripheral edge portion of the desired annular region on the lower surface of the substrate. When,
A step of arranging an annular flow path extending obliquely downward with respect to the upper surface of the substrate and outward in the radial direction to the annular outlet orifice near the inner peripheral edge of the upper surface of the substrate opposite to the inner peripheral edge of the desired annular region concentrically with the substrate And guiding the processing liquid for processing the upper surface of the substrate to the annular outlet orifice through the annular flow path, and utilizing the centrifugal force acting on the processing liquid to bring the processing liquid to the inner peripheral edge portion of the desired annular region on the upper surface of the substrate. The method is characterized by including a step of supplying and a step of simultaneously or continuously processing the desired annular region on the upper surface of the substrate and the desired annular region on the lower surface of the substrate by utilizing the centrifugal force acting on the processing liquid.

[0060]

BEST MODE FOR CARRYING OUT THE INVENTION Embodiments of a substrate processing apparatus according to the present invention will be described below with reference to the drawings.

First, a first embodiment of the present invention will be described with reference to FIGS. In the substrate processing apparatus according to the first embodiment, the processing liquid is guided to the lower surface of the substrate to process the annular area on the lower surface of the substrate.

FIG. 1 is a schematic sectional view of a substrate processing apparatus according to the first embodiment of the present invention. As shown in FIG. 1, the substrate processing apparatus 1 includes a holder 2 for holding a substrate A, a drive unit 6 connected to a lower portion of the holder 2 and rotating the holder 2 around a rotation axis 4. Two lower nozzles 8 and 10 having processing liquid supply ports for supplying the processing liquid for processing the lower surface A1 of the substrate A, and an upper nozzle 12 for supplying the processing liquid for processing the upper surface A2 of the substrate A. And have.
The treatment liquid is an acid, an alkali or an organic solvent or other chemical liquid, pure water or deionized water, and the treatment content, for example, the object to be removed and washed is any foreign matter such as particles, polymers or metals, or an oxide film or nitrogen. It may be determined depending on which film, such as a chemical film or a modified film generated by CMP.

The holding table 2 includes a central disc portion 14 facing the lower surface A1 of the substrate A, a shaft portion 16 connected under the central disc portion 14, and a coupling 18 arranged around the shaft portion 16. , And an outer annular portion 20 which is arranged around the central disk portion 14 with a space therebetween, and the substrate A is floated and supported.

The central disk portion 14 is disposed below the substrate A concentrically with the rotation axis 4 and has a substantially horizontal upper surface 22 forming a so-called chuck surface, a side surface 24, and a lower surface 26. As will be described later, the substrate A is levitated and the central disc portion 1
4 between the upper surface 22 of substrate 4 and the lower surface A1 of substrate A
Is configured. The central disk portion 14 is smaller than the area of the substrate A and has an area sufficient to float the substrate A. The side surface 24 of the central disk portion 14 is, for example, reduced in diameter downward. The central disk portion 14 has a central opening 30 facing the circular space 28 at the center of its upper surface 22, and a lumen 32 extends downward from this central opening 30.

The shaft portion 16 is connected below the central disk portion 14 and concentrically therewith. The diameter of the shaft portion 16 is smaller than the diameter of the central disk portion 14. A lumen 32 extending downward from the central opening 30 of the central disk portion 14 extends further inside the shaft portion 16 and communicates with a side surface opening 36 provided on a side surface 34 of the shaft portion 16. A bearing 38 is arranged below the shaft portion 16, and the bearing 38 supports the shaft portion 16, that is, the holding base 2 so as to be rotatable about the rotation axis 4.

The coupling 18 is fixedly arranged around the shaft portion 16 so as not to rotate even if the shaft portion 16 rotates. The coupling 18 is the shaft 16
Has an annular gap 40 which is aligned with the side opening 36 of the coupling 18.
Is in communication with. The connection port 42 is connected to the gas supply source 44. Thus, the gas supply source 44 is the connection port 4
2, through the annular gap 40, the side surface opening 36 and the lumen 32, it communicates with the central opening 30 of the central disc portion 14. Further, annular seals 46 are provided above and below the annular gap 40 in order to prevent gas leakage between the coupling 18 and the shaft portion 16.

The outer annular portion 20 is arranged concentrically around the central disc portion 14 with a space therebetween. Outer ring 2
0 has an annular upper surface 48 facing the lower surface A1 of the substrate A, and an annular guide surface 50 extending downward from the annular upper surface 48 beyond the central disk portion 14. The annular upper surface 48 of the outer annular portion 20
And the upper surface 22 of the central disk portion 14 are formed with an annular opening 52, and an annular nozzle 54 is formed between the annular guide surface 50 and the side surface 24 of the central disk portion 14, and the annular guide surface 50 and the central disk portion are formed. Lower surface 26 of 14 and side surface 34 of shaft portion 16
An annular space 56 for arranging the lower nozzles 8 and 10 is formed between and.

The annular upper surface 48 is substantially horizontal and its outer diameter is larger than the outer diameter of the substrate A. For convenience, the annular upper surface 48 and the upper surface 22 of the central disk portion 14 are preferably flush with each other, but may be higher or lower than that. The cross-sectional contour of the annular guide surface 50 is a trumpet shape. Here, the term “trumpet-like” means that the cross-sectional contour of the annular guide surface 50 expands radially outward of the substrate A toward the lower surface A1 of the substrate A. This trumpet-shaped cross-sectional profile is, for example, a downward convex curve, as shown in FIG. The trumpet-shaped cross-section may have other shapes, examples of which are shown in FIGS.
That is, it may be an upward convex curve as shown in FIG. 2, a straight line as shown in FIG. 3, a combination of straight lines and curved lines as shown in FIG. 4, and FIG. It may be sinusoidal.

The annular guide surface 50 has an end peripheral edge in the vicinity of the inner peripheral edge which is arranged to face the inner peripheral edge of the desired annular region to be treated with the treatment liquid. This end peripheral edge forms the maximum expanded diameter portion of the annular guide surface 50 and coincides with the annular opening 52. Annular guide surface 50
The end peripheral portion forms an acute angle radially outward with respect to the annular upper surface 48, and the nozzle angle α with respect to the annular upper surface 48 is preferably 10 to 60 °, and its position is from the outer peripheral edge A3 of the substrate A. It is preferably located 3 to 5 mm radially inward. The radial width of the annular opening 52 is preferably 0.3 to 5.0 mm, and more preferably
It is 0.5 to 1.0 mm. However, these values may be designed arbitrarily.

The outer annular portion 20 and the central disk portion 14 are connected by a plurality of connecting bodies 58 arranged at positions where they do not interfere with the lower nozzles 8 and 10. Therefore, the shaft portion 1
The outer annular part 20 is rotated when 6 is rotated by the drive part 6.
And the central disk portion 14 rotate together. Six connecting bodies 58 are provided at equal intervals in the circumferential direction (see FIG. 6). Details of the connecting body 58 will be described later.

Further, the outer annular portion 20 has a plurality of holes 60 arranged on the annular upper surface 48 on the same circumference, and an annular space 62 communicating with these holes 60. Six holes 60 are provided at equal angular intervals in the circumferential direction (see FIG. 6). A plurality of pins 64 are arranged in these holes 60. Each pin 64 is
An eccentric protrusion 68 that can be eccentrically moved around the axis 66 and that protrudes from the annular upper surface 48 is provided on the upper portion thereof. The lower portion of each pin 64 extends into the annular space 62 and forms a gear 70.
Further, a ring gear 72 that engages with the gear 70 is arranged in the annular space 62 concentrically with the rotation axis 4. The ring gear 72 is
For example, the actuator 74 is adapted to rotate about the rotation axis 4. In order to center the substrate A, the eccentric projection 68 comes into contact with or separates from the outer peripheral edge A3 of the substrate A depending on the change in the position in the radial direction.

The drive section 6 has a mechanism for rotating the shaft section 16. For example, the motor 76, a pulley 78 connected to the motor 76, a pulley 80 connected to the shaft section 16, and a space between the pulleys 78, 80. And a transmission belt 82 that transmits rotation. The holder 2 is rotated about the rotation axis 4 by the drive unit 6.

The lower nozzles 8 and 10 are arranged in the annular space 56 between the central disk portion 14 and the outer annular portion 20. Therefore, the lower nozzles 8 and 10 do not rotate even if the holding table 2 rotates. Further, the lower nozzles 8 and 10 are arranged in a stationary manner, two by two at equal angular intervals in the circumferential direction (see FIG. 6), and may be L-shaped as shown in FIG. Other shapes such as a U-shape may be used. The processing liquid supply ports 84 and 86 of the lower nozzles 8 and 10 face the annular guide surface 50. The lower nozzle 8 is connected to the processing liquid supply source 88, and the lower nozzle 10 is connected to the processing liquid supply source 90.
Connected to. The processing liquid supply sources 88 and 90 are filled with different types of processing liquids.

The upper nozzle 12 is arranged above the substrate A along the rotation axis 4. The upper nozzle 12 is connected to the processing liquid supply source 92.

Next, referring to FIGS. 1 and 6, the connector 58
Will be described in detail. FIG. 6 shows the connecting body 58 along the line 6- of FIG.
6 is a plan view of the outer annular portion 20 shown in a cross section in FIG. As shown in FIG. 1, the connecting body 58 includes the lower nozzle 8,
Inlet surface 58a facing 10 and outlet surface 58b on the opposite side
The inlet surface 58a is provided with a groove 58c located at the same height as the processing liquid supply ports 84 and 86 of the lower nozzles 8 and 10. The groove 58c has a groove surface 58d that faces the lower nozzles 8 and 10. As shown in FIG. 6, the inlet surface 58a and the outlet surface 58b extend outward in the radial direction in the circumferential direction opposite to the rotation direction 20a of the outer annular portion 20, and propel the treatment liquid outward in the radial direction. Constitutes a blade for doing. Similarly, the groove surface 58d of the groove 58c also extends radially outward as it goes in the circumferential direction opposite to the rotation direction 20a of the outer annular portion 20, and the groove end 58e.
Has been extended to.

Next, the operation of the substrate processing apparatus 1 will be described.

First, the gas supply source 44 is operated to eject gas from the central opening 30 of the central disk portion 14 through the connection port 42, the annular gap 40, the side opening 36, and the lumen 32. The gas is preferably high purity nitrogen gas, but may be other high purity inert gas or fully purified air or other gas. Next, the substrate A is placed on the holding table 2 and a substrate transfer device
Transfer (not shown) or the like. At this time, since the gas has already been jetted from the central opening 30 of the central disk portion 14, the substrate A is transferred from the substrate transfer device to the holding table 2 in a floating state without coming into contact with the holding table 2. It Explaining this, the gas radially flows at a high speed in the circular space 28 between the substrate A and the central disk portion 14 to cause the Bernoulli effect, so that the substrate A is kept at a constant distance between it and the central disk portion 14. Levitate to keep on. That is, the substrate A receives an upward force due to the jet of gas, a downward force due to the negative pressure generated by the radial flow of the gas, and a downward force due to the weight of the substrate A, and is substantially horizontal at a position where these forces are balanced. It is held on the holding table 2.

Then, the actuator 74 is operated,
When the ring gear 72 is rotated, the pins 64 move to the axis 66.
The eccentric projections 68 of the pins 64 are brought into contact with the substrate A, respectively, by being rotated around. As a result, the lateral movement of the substrate A floating from the holding table 2 is limited, and the substrate A is arranged concentrically with the rotation axis 4. Further, the rotation of the holding table 2 can be transmitted to the substrate A. Then, the motor 76 of the drive unit 6 is operated to rotate the holding table 2. As a result, the substrate A is rotated. The rotation speed is variable, for example about 200 to 5
000 rpm. This rotation speed may be determined from the viewpoint of processing the lower surface A1 by supplying the processing liquid from the lower nozzles 8 and 10, which will be described later. For example, if a swirling flow cleaning effect due to the centrifugal force of the processing liquid is desired, a high rotation speed may be used.

Then, a treatment liquid for treating the substrate A, for example, a chemical liquid is supplied from the upper nozzle 12 to the upper surface A2 of the substrate A by jetting or dropping. The treatment liquid may be supplied continuously or intermittently. Upper nozzle 12
The processing liquid supplied from the substrate A to the upper surface A2 of the substrate A is moved radially outward from the center of the upper surface A2 of the substrate A by the centrifugal force generated by the rotation of the substrate A, and the outer peripheral edge A of the substrate A is also transferred.
Up to 3 spread over the entire upper surface A2 of the substrate A. As a result, the upper surface A2 of the substrate A is processed with the processing liquid. The processing liquid that has reached the outer peripheral edge A3 of the substrate A is further ejected outward by the centrifugal force generated by the rotation of the substrate A.

Further, the same treatment liquid as the treatment liquid supplied from the upper nozzle 12, for example, a chemical liquid is jetted from the lower nozzle 8. Most of the sprayed chemical liquid is the groove 58c of the connecting body 58.
Inside. Since the chemical liquid receives a centrifugal force due to the rotation of the outer annular portion 20, the chemical liquid is pressed against the groove surface 58d of the groove 58c. Due to the above-described relationship between the rotation direction 20a of the outer annular portion 20 and the direction in which the groove surface 58d extends (see FIG. 6), the chemical liquid is
It moves radially outward along the groove surface 58d, is propelled and accelerated, and is jetted from the groove end 58e. Groove edge 58e
The chemical liquid ejected from and the chemical liquid ejected from the lower nozzles 8 and 10 and not entering the groove 58c reach the inlet face 58a or the outlet face 58b of the coupling body 58, or drop to the annular guide face 50. The chemical liquid that has reached the inlet surface 58a or the outlet surface 58b is the same as the chemical liquid that has entered the groove 58c.
8a or the exit surface 58b, it moves radially outward, is propelled and accelerated, and finally falls on the annular guide surface 50. The chemical liquid that has dropped onto the annular guide surface 50 moves and spreads along the annular guide surface 50 toward the lower surface A1 of the substrate A because the annular guide surface 50 has a trumpet-shaped cross-sectional profile. It becomes uniform and is guided to the annular opening 52. In this way, the chemical liquid sprayed from the lower nozzles 8 and 10 has a groove surface 58d, an inlet surface 58a, and an outlet surface 58b.
The liquid chemicals can be efficiently propelled and accelerated, and the chemical liquid can be efficiently moved radially outward.

The chemical liquid that has reached the annular opening 52 at the most enlarged diameter portion of the annular guide surface 50 is swirled in the circumferential direction of the lower surface A1 due to the centrifugal force, and is discharged at the nozzle angle α, so that the substrate A Wet the inner peripheral edge of the desired annular region of the lower surface A1. The chemical liquid that wets the lower surface A1 of the substrate A is subjected to a centrifugal force due to the rotation of the substrate A, and is moved and spread outward in the radial direction. As a result, the desired annular region on the lower surface A1 of the substrate A is uniformly processed. Further, the gas that radially flows in the circular space 28 between the substrate A and the central disk portion 14 pushes the chemical liquid discharged from the annular opening 52 outward in the radial direction. Never move to. As a result, the supply range of the processing liquid is limited, the boundary between the non-processing part and the processing part can be made clear, and precise processing is possible. Further, by designing the position of the annular opening 52 arbitrarily, a desired annular region can be treated with the chemical solution. The chemical liquid that has reached the outer peripheral edge A3 of the substrate A is ejected by the centrifugal force.

In some cases, the supply of the processing liquid from the lower nozzle 18 may be performed concurrently with the supply of the processing liquid from the upper nozzle 22. Thus, the processing efficiency of the substrate can be improved by simultaneously processing the upper surface and the lower surface of the substrate. The same applies when the treatment liquid from the lower nozzle 18 and the treatment liquid from the upper nozzle 22 are different.

Then, a treatment liquid for treating the substrate A, for example, pure water, is supplied from the lower nozzle 10 onto the annular guide surface 50 by jetting or dropping. The supplied pure water can treat a desired annular region with pure water, like the chemical liquid supplied from the lower nozzle 8. As a result, it is possible to easily and continuously switch the processing using different processing liquids.
The processing time can be shortened. Further, since the lower nozzles 8 and 10 do not rotate, the structure of the conduits 94 and 96 to the lower nozzles 8 and 10 can be simplified. Furthermore,
Contamination caused by the connection between the rotating and non-rotating conduits that would otherwise be provided if not configured as in this embodiment can be avoided. Moreover, since different types of processing liquids are supplied from different lower nozzles 8 and 10, it is possible to prevent the pipelines from being contaminated by supplying different processing liquids through a single pipeline. Lower nozzle 1
When pure water is supplied from 0, pure water may be supplied from the upper nozzle 12.

According to the present embodiment, for example, the front surface on which various elements are formed and the outer peripheral surface (bevel portion)
And a substrate A having a back surface on which elements are not formed,
It can be floated and held from the chuck surface so that the front surface faces downward, and the annular outer peripheral portion, the outer peripheral edge surface and the back surface, which are the element non-forming portions of the front surface, can be easily washed. Also, the rotation speed, the gas flow rate, the processing liquid flow rate, the annular opening 5
By optimally designing the position 2, the radial width of the opening 52, and the processing liquid discharge angle, the desired annular region near the outer peripheral edge A3 of the substrate A can be precisely processed.

Substrate levitation by a so-called air bearing, which utilizes static pressure generated by collision of gas jetted from a perforated plate or porous material and the lower surface A1 of the substrate A, instead of the substrate levitation mechanism utilizing the Bernoulli effect. A substrate floating mechanism that utilizes the function may be adopted.

Next, a second embodiment of the substrate processing apparatus according to the present invention will be described with reference to FIG. Also in the substrate processing apparatus of the second embodiment, the processing liquid is guided to the lower surface of the substrate along the guide surface, as in the first embodiment.

FIG. 7 is a schematic sectional view of a substrate processing apparatus according to the second embodiment of the present invention. As shown in FIG. 7, the substrate processing apparatus 100 is the substrate processing apparatus 1 of the first embodiment.
Is similar to. The substrate processing apparatus 100 is characterized in that a vacuum device 102 is used instead of the gas supply device 44 of FIG. Therefore, the same parts as those in the first embodiment are designated by the same reference numerals, and the description thereof will be omitted. The characteristic parts will be described below.

The vacuum device 102 includes the connection port 42 of the coupling 18, the annular gap 40, and the side surface opening 3 of the shaft portion 16.
6, through the lumen 32, and communicates with the plurality of openings 104 in the upper surface 22 of the central disk portion 14. Further, the annular upper surface 48 of the outer annular portion 20 is arranged lower than the upper surface 22 of the central disk portion 14. The height relationship between the annular upper surface 48 of the outer annular portion 20 and the upper surface 22 of the central disk portion 14 depends on the annular nozzle 54.
The processing liquid ejected from the lower surface A1 of the substrate A on which the processing liquid is adsorbed
Is designed to wet the inner peripheral edge of the desired annular region of.

According to such a configuration, the vacuum device 102
Is operated, the opening 10 on the upper surface 22 of the central disk portion 14 is
Negative pressure is generated in 4 and the substrate A is adsorbed to the central disk portion 14. According to this embodiment, the processing liquid can be supplied to the lower surface A1 of the substrate A in the same manner as in the first embodiment while the substrate A is held by suction on the holding table 2. As a result, the lower surface A1 of the substrate A is uniformly processed by utilizing the centrifugal force acting on the processing liquid.

Note that, unlike the first embodiment, in this embodiment, the substrate is held by a suction action, so that the substrate is held in contact with it while pins for supporting the lateral movement of the substrate are provided. The entire device can be simplified in that it need not be provided on the periphery of the substrate.

As described above, the first processing liquid is supplied to the lower surface of the substrate.
Although the second embodiment has been described in detail, various changes and modifications can be made within the scope of the invention described in the claims. For example, in the first and second embodiments, the same type of treatment liquid is supplied from the upper nozzle 12 and the lower nozzle 8, but different types of treatment liquid may be supplied. This allows the upper surface A2 and the lower surface A1 of the substrate A to be simultaneously processed with different processing liquids.

Alternatively, the processing liquid may be supplied only from the lower nozzle 8 without supplying anything from the upper nozzle 12.
This makes it possible to process only the lower surface A1 of the substrate A, in particular only the desired annular area. Further, gas may be supplied from the upper nozzle 12 so that the processing liquid supplied to the lower surface A1 of the substrate A does not flow around to the upper surface A2 of the substrate A.

In the first and second embodiments, the case where the total number of the lower nozzles 8 and 10 is four has been described, but the total number thereof may be three or less, or five. It may be more. When the total number of the lower nozzles 8 and 10 is three or more, the number of processing steps to be continuously processed can be increased.

Further, common fluid processing sources 88 and 90 may be connected to two or more lower nozzles 8 and 10. Thereby, the processing liquid can be efficiently supplied to the lower surface A1 of the substrate A.

Further, the inlet 58a, the outlet 58b or the groove 58c may not be provided in the connecting body 58. That is, without providing a blade for propelling the treatment liquid outward in the radial direction, the chemical liquid is sprayed or dropped from the lower nozzles 8 and 10 onto the annular guide surface 50, and the chemical solution of the substrate A is guided along the annular guide surface 50. Lower surface A1
You may move toward. Further, in the first and second embodiments, the case where the number of the connecting bodies 58 is six has been described, but the number of the connecting bodies 58 may be seven or more, or five.
It may be less than two.

Further, in the first embodiment, the central disc portion 1
Although the central opening 30 through which gas is injected is provided in FIG. 4, this central opening 30 may be omitted.

Next, with reference to FIG. 8, a third embodiment of the substrate processing apparatus according to the present invention will be described. The substrate processing apparatus according to the third embodiment is different from the first and second embodiments in which the processing liquid is guided to the lower surface of the substrate, and the processing liquid is guided to the upper surface of the substrate.

FIG. 8 is a schematic sectional view of a substrate processing apparatus which is the third embodiment of the present invention. As shown in FIG. 8, the substrate processing apparatus 150 includes a holding table 152 that rotatably holds the substrate A from below, and an upper surface side rotating body 154 that is arranged above the substrate A with a space therebetween. There is.

The holding table 152 has a structure similar to that of the holding table 2 of the first embodiment, and instead of the central disk portion 14 and the outer annular portion 20 of the holding table 2, a single disk portion 156.
The holding base 2 is the same as the holding base 2 of the first embodiment except that Further, the holding table 152 is adapted to be rotationally driven by a drive unit 158 having the same configuration as the drive unit 6 of the first embodiment. Therefore, in FIG. 8, the same components as those of the first embodiment are designated by the same reference numerals, and the description thereof will be omitted.

The upper rotary member 154 can be rotated concentrically with the substrate A by a drive mechanism (not shown) connected to the upper part thereof. The details of the drive mechanism are the same as those of the drive unit 158 of the holding table 152, and thus the description thereof will be omitted. Furthermore,
The upper surface side rotating body 154 is moved by an elevating mechanism (not shown).
It can be moved relative to the substrate in the vertical direction.

The upper surface side rotating body 154 includes an inner rotating portion 160 arranged concentrically with the substrate A, an outer annular rotating portion 162 surrounding and surrounding the inner rotating portion 160.
Two intermediate annular rotating parts 16 arranged at a distance from each other between the inner rotating part 160 and the outer annular rotating part 162.
4 and 166. Two intermediate annular portions 164,
Each of the 166 is telescopically spaced from each other. Inner rotating part 160, intermediate annular rotating part 16
4, 166 and the outer ring-shaped rotary portion 162 are connected to each other by the connecting body 168.
They are connected to each other by and can rotate together.

These rotating parts 160, 164, 166,
Between the 162, the annular flow paths 170a, 170b, 170
c is formed, and the inner rotary part 160 and the intermediate annular rotary parts 164, 166 respectively have an annular guide surface 172a,
It has 172b and 172c. Annular guide surface 172
a, 172b, 172c extend to an end peripheral edge in the vicinity of the inner peripheral edge of the upper surface A2 of the substrate opposite to the inner peripheral edge of the desired annular region, and the end peripheral edge is the annular guide surfaces 172a, 17c.
2b and 172c form the maximum expanded diameter portion. Circular guide surface 1
72a, 172b and 172c are preferably in the shape of a trumpet that expands radially outwardly toward the upper surface A2 of the substrate. The annular flow passages 170a, 170b, 170c are respectively provided with annular entrance openings 174a, 174a that open upward.
4b and 174c and trumpet-shaped guide surfaces 172a and 172.
b, 172c, and annular outlet orifices 176a, 176b, 176c, which are formed on the peripheral edges of the substrates, extending to the annular outlet orifices 176a, 176b, 17 diagonally downward with respect to the upper surface of the substrate and radially outward There is.

Annular exit orifices 176a, 176b,
The distance between 176c and the upper surface A2 of the substrate A is preferably about 0.2-10 mm. Also, the annular outlet orifices 176a, 176b, 176c preferably have a small radial width and a narrow pitch. For example, annular outlet orifices 176a, 176b, 176c
Has a width of about 3 to 10 mm. The positions of the annular exit orifices are 7.5 mm from the peripheral edge A3 of the substrate A, respectively.
It is at 5.0 mm and 2.5 mm. With these positions,
The positions of the inner peripheral edge of the desired annular region to be treated with the treatment liquid are determined, and these positions are designed arbitrarily.

Annular inlet openings 174a, 174b, 174
The radial width and pitch of c depends on the annular exit orifice 17
It is wider than the radial width and pitch of 6a, 176b, 176c. Therefore, the annular flow paths 170a, 17
0b, 170c and trumpet-shaped guide surfaces 172a, 172
The inclination angles of b and 172c become steeper as the outer annular flow path and the trumpet-shaped guide surface are formed.

Further, the processing liquid supply nozzles 178a, 178b, 178c having the processing liquid supply ports are fixedly arranged above the annular inlet openings 174a, 174b, 174c, respectively, and the processing liquid supply nozzles 178a, 178b, 178 are provided.
The processing liquid dropped or sprayed from c is the annular inlet opening 174.
a, 174b, 174c through the annular outlet orifice 17
6a, 176b, 176c are guided. The processing liquid supply nozzles 178a, 178b, and 178c are different processing liquid supply sources 180a, 180b, and 1 respectively.
It is connected to 80c so that different processing liquids can be supplied. The treatment liquid is, for example, a mixed liquid of hydrofluoric acid and hydrogen peroxide, an organic solvent, or ultrapure water.

Further, the inner rotating portion 160 is provided with an opening 182 for injecting gas, which is arranged in the center of the inner rotating portion so as to face the upper surface A2 of the substrate A. The gas is preferably high-purity nitrogen gas, but may be other high-purity inert gas or sufficiently purified air or other gas. The structure (not shown) for injecting gas is the holding table 1.
Since the configuration is similar to that of ejecting gas from the central opening 30 of 52, the description thereof is omitted.

Further, the processing liquid supply nozzles 178a, 178
The b, 178c and the upper surface side rotator 154 can be offset from above the holding table 152 so as not to be an obstacle when mounting the substrate A on the holding table 152 or taking out the substrate A from the holding table 152.

Next, the operation of the substrate processing apparatus according to the third embodiment of the present invention will be described.

Treatment liquid supply nozzles 178a, 178b, 1
The substrate A is held by the holding table 152 in a substantially horizontal plane in the same manner as in the first embodiment with the 78c and the upper-side rotating body 154 offset from above the holding table 152. Next, the upper surface side rotating body 154 is arranged above the substrate A and concentrically, and the processing liquid supply nozzles 178a and 178 are arranged.
b, 178c respectively into annular inlet openings 174a, 17a
It is arranged above 4b and 174c. Next, the holding table 15
2 and the upper surface side rotating body 154 are rotated concentrically with the substrate A. It is preferable that the two rotate in the same direction. The rotational speeds of the both may be the same or different, but the rotational speeds of the both are about 30.
It is preferably 00 rpm or less. Next, the gas is injected from the opening 182 of the inner rotating portion 160. The gas flows radially outward from the central portion of the substrate along the gap between the inner rotating portion 160 and the upper surface A2 of the substrate A.

Next, the hydrofluoric acid mixed liquid is supplied from the processing liquid supply nozzle 178c to the trumpet-shaped guide surface 1 of the intermediate annular rotating portion 166.
It is continuously or intermittently supplied onto 72c. The processing liquid that has dropped onto the trumpet-shaped guide surface 172c is subjected to gravity and centrifugal force due to the rotation of the upper surface side rotating body 154, and is guided to the annular outlet orifice 176c along the trumpet-shaped guide surface 172c. When the annular outlet orifice 176c has a large radial width, the processing liquid flows from the inner peripheral edge of the annular outlet orifice 176c to the upper surface A2 of the substrate A as it is. Also,
When the radial width of the annular outlet orifice 176c is narrow, the processing liquid is once supplied to the annular outlet orifice 176c.
Is collected in the annular flow passage 170c in the vicinity of the annular flow passage 170c, and then the centrifugal force generated by the rotation of the upper surface side rotating body 154 causes the annular flow passage 170
A force is applied in the direction along c and is supplied obliquely to the upper surface A2 of the substrate A and outward in the radial direction from the annular outlet orifice 176c to the upper surface A2 of the substrate A. Then, the processing liquid supplied to the upper surface A2 of the substrate A receives a centrifugal force due to the rotation of the substrate A, and moves in a radial flow outward in a swirling flow.

The processing liquid supplied from the annular outlet orifice 176c forming the peripheral edge of the trumpet-shaped guide surface 172c to the inner peripheral edge of the desired annular region of the upper surface A2 of the substrate A is the substrate A.
Since it receives the centrifugal force due to the rotation, the boundary between the non-processing part and the processing part can be made clear, and the desired annular region of the upper surface A2 of the substrate A can be processed uniformly and precisely.

Further, the gas jetted from the opening 182 of the inner rotating part 160 has the inner rotating part 160 and the upper surface A2 of the substrate A.
Since it flows outward in the radial direction from the central portion of the substrate along the gap between the processing liquid and the annular outlet orifice 176c.
It can be more reliably prevented from moving inward in the radial direction than the inner peripheral edge of. As a result, the supply of the processing liquid to areas other than the desired annular region is reliably prevented.

Then, from the processing liquid supply nozzle 178a,
Ultrapure water is supplied onto the trumpet-shaped guide surface 172a of the inner rotating part 160. Similar to the case of supplying the hydrofluoric acid mixed liquid described above, the desired annular region on the substrate upper surface A2 radially outward of the inner peripheral edge of the annular outlet orifice 176a can be washed with ultrapure water. Since the annular outlet orifice 176a is located radially inward of the annular outlet orifice 176c, the entire annular region treated with the hydrofluoric acid mixed solution can be washed with ultrapure water.

Further, the position of the inner peripheral edge of the desired annular region can be adjusted by moving the upper surface side rotating body 154 relative to the substrate in the vertical direction by using an elevating mechanism (not shown). . Specifically, the annular flow path 17
0a, 170b, 170c are obliquely downward and radially outward from the upper surface A2 of the substrate A up to the annular outlet orifices 176a, 176b, 176c arranged near the inner peripheral edge of the desired annular region of the upper surface A2 of the substrate A. Because it extends
The processing liquid guided to the annular outlet orifices 176a, 176b, 176c is jetted obliquely downward and radially outward toward the upper surface A2 of the substrate A from there. As a result, the radial position where the processing liquid reaches the upper surface A2 of the substrate A is determined by the annular outlet orifices 176a, 176b, 176c.
Will vary depending on the distance between the substrate and the top surface of the substrate. Therefore, by moving the upper surface side rotating body 154 relative to the substrate A in the vertical direction, the distance between the annular outlet orifices 176a, 176b, 176c and the upper surface A2 of the substrate A is changed, and the inside of the desired annular region is changed. The position of the peripheral edge can be finely adjusted. As a result, it is possible to easily deal with the processing of the desired annular region of the substrate desired by the user.

In the substrate processing apparatus according to the third embodiment of the present invention, annular outlet orifices 176a and 176 are provided.
Since a plurality of b, 176c are provided in the radial direction, annular outlet orifices 176a, 176b, 1 for supplying the processing liquid are provided.
By selecting 76c, the range of the annular region to be processed can be easily changed.

In addition, different annular flow paths 170a, 170
By supplying different treatment liquids to b and 170c, different treatments can be continuously performed. For example, as described above, the cleaning treatment with ultrapure water can be continuously performed after the chemical treatment. . In this case, it is preferable to allocate ultrapure water to the processing liquid supplied to the innermost annular flow path 170a as in the present embodiment. With this configuration, after the upper surface A2 of the substrate A is treated with the treatment liquid supplied to the other annular flow paths 170b and 170c, the entire treated region can be continuously washed with ultrapure water. . Thereby, the processing efficiency and the processing accuracy can be improved.

In addition, different annular flow paths 170a, 170
Since different treatment liquids can be assigned to b and 170c, it is possible to prevent contamination of the annular flow passage that may occur when different treatment liquids are supplied from one annular passage. Thereby, the processing accuracy can be improved.

Further, the processing liquid supply nozzles 178a, 178
Since a plurality of b, 178c are provided, the type of the processing liquid to be supplied to the substrate A is set to the processing liquid supply nozzles 178a, 178.
It can be easily changed by simply switching b and 178c.

Further, the processing liquid supply nozzles 178a, 178
b and 178c are separately disposed from the rotatable upper surface side rotating body 154 and are fixedly arranged, it is not necessary to provide a sliding portion which is required when integrally formed with the upper surface side rotating body 154. In addition to being simple, it is possible to prevent dust generation due to sliding and form a better ambient environment.

Further, in the present embodiment, when the front surface of the substrate A is treated as the upper surface A2, the back surface of the substrate A can be held from below without contact or by suction.
The conventional substrate holding method can be adopted as it is.
As a result, this embodiment can be easily added to the conventional device.

Next, a fourth embodiment of the substrate processing apparatus according to the present invention will be described with reference to FIG. In the substrate processing apparatus according to the fourth embodiment, the processing liquid is guided to the upper surface of the substrate along the guide surface, as in the third embodiment.

FIG. 9 is a schematic sectional view of a substrate processing apparatus which is the fourth embodiment of the present invention. As shown in FIG. 9, the substrate processing apparatus 200 is characterized in that the holding table 152 is omitted from the substrate processing apparatus 150 according to the third embodiment.
Therefore, the same components as those in the third embodiment are designated by the same reference numerals, and the description thereof will be omitted.

The substrate processing apparatus 200 has an upper surface side rotating body 202 which holds the substrate A rotatably from above and is arranged above the substrate A with a space therebetween. The structure of the upper surface side rotating body 202 is the same as that of the upper surface side rotating body 154 of the third embodiment.
The structure is similar to that of the above, except that it further has six pins 206 for holding the substrate A from above. 6
The two pins 206 have an actuating mechanism (not shown) similar to the pin 64 of the first embodiment, and can hold and release the substrate A. For this reason,
A description of the operating mechanism of the pin 206 will be omitted.

Next, the operation of the substrate processing apparatus 200 according to the fourth embodiment of the present invention will be described.

While jetting gas from the opening 182 of the inner rotating portion 160, the substrate A to be processed is placed on the upper rotating body 202.
, The six pins 206 are operated to hold the substrate A by the upper surface side rotating body 202. Inner rotating part 16
The substrate A is attracted to the upper surface side rotating body 202 by the gas injected from the zero opening 182, and the upper surface A2 of the substrate A and the upper surface rotating body 202 are separated from each other. The interval is 0.2 to 1 mm. Then, in the same manner as in the third embodiment, the treatment liquid supply nozzles 178a, 1
A desired processing liquid is supplied from 78b and 178c to the annular flow path 170.
a, 170b, 170c, and the desired annular region of the upper surface A2 of the substrate A is processed.

According to this embodiment, the same effect as that of the third embodiment can be obtained. Further, the holding table 152 for holding the substrate A from below is unnecessary, and further, the upper surface side rotating body 202 and the processing liquid supply nozzles 178a, 178b, 1
Since the mechanism for offsetting 78c from above the substrate A is not necessary, the structure can be simplified.

As described above, the third processing liquid is supplied to the upper surface of the substrate.
Although the fourth embodiment has been described, the following modifications are possible.

In the third and fourth embodiments, the number of intermediate annular rotating portions 164 and 166 is set to 2, and the annular flow passage 170a,
170b, 170c, annular exit orifice 176a, 1
76b, 176c and processing liquid supply nozzles 178a, 17
Although the number of 8b and 178c is set to 3, the number thereof is arbitrary.

In the third and fourth embodiments,
Although the upper surface side rotating bodies 154 and 202 are rotated, if the annular guide surfaces 172a, 172b and 172c are trumpet-shaped,
Without rotating the upper-side rotators 154 and 202, the processing liquid is transferred to the annular outlet orifices 176a and 176 only by gravity.
b, 176c may be guided. After that, the upper surface side rotating body 1
The processing liquid may be supplied to the upper surface of the substrate by rotating 54 and 202, or the processing liquid may be supplied to the upper surface of the substrate by gravity without rotating the upper surface side rotating bodies 154 and 202.

In addition, in the third and fourth embodiments,
Although the shape of the annular guide surfaces 172a, 172b, 172c is a trumpet shape, the shape is not limited thereto. For example, as long as the processing liquid is supplied to the edge of the annular guide surface or the annular outlet orifice, the shape of the annular guide surface is arbitrary, and the intermediate portion of the annular guide surface may include a horizontal portion. You may include the part which makes an inclination opposite to a form.

Further, in the third and fourth embodiments, different kinds of treatment liquids are supplied from the three treatment liquid supply nozzles 178a, 178b, 178c, but the same kind of treatment liquid may be supplied. With such a configuration, the processing liquid supply nozzles 178a, 178b, 178c are pre-assigned with the annular flow passages 170a, 170b, 170c, respectively, so that the processing liquid supply nozzles 178a, 178b, 178
The annular region range to be processed can be changed simply by switching 78c.

In the third and fourth embodiments, three processing liquid supply nozzles 178 to which different processing liquids are supplied.
a, 178b, 178c are different annular flow paths 170a, 1
Although they are assigned to 70b and 170c, they may be assigned to the same annular flow paths 170a, 170b and 170c.
With such a configuration, when different processing liquids are processed on the same annular region of the upper surface A2 of the substrate A, different processings can be continuously performed by simply switching the processing liquid supply nozzles 178a, 178b, 178c. it can.

Further, in the third and fourth embodiments, the inner rotating portion 160 is provided with the opening 182 for injecting the gas, but this opening 182 may be omitted.

Next, with reference to FIG. 10, a fifth embodiment of the substrate processing apparatus according to the present invention will be described. The substrate processing apparatus according to the fifth embodiment is different from the first to fourth embodiments in which the processing liquid is guided to one of the upper surface and the lower surface of the substrate by the guide surface, and the processing liquid is applied to the substrate along the guide surface. The feature is that it is guided to both the upper surface and the lower surface. .

FIG. 10 is a schematic sectional view of a substrate processing apparatus according to the fifth embodiment of the present invention. As shown in FIG. 10, the substrate processing apparatus 250 includes a combination of the holding table 2, the driving unit 6 and the lower nozzles 8 and 10 of the first embodiment and the upper surface rotating body 154 of the third embodiment. It has a feature. Therefore, in FIG. 10, the same components as those of the first and third embodiments are designated by the same reference numerals, and the description thereof will be omitted.

Next, the operation of the fifth embodiment will be described.
In this operation, the desired annular area on the lower surface of the substrate is processed in the same manner as the operation of the first embodiment, and the desired annular area on the upper surface of the substrate is processed in the same manner as in the third embodiment. Therefore, the description of these operations is omitted. In the operation of the present embodiment, the processing of the upper surface of the substrate and the processing of the lower surface of the substrate may be performed at the same time, or any one of the processing may be performed first and the other processing may be continuously performed. .

Further, the processing liquid for processing the upper surface of the substrate and the processing liquid for processing the lower surface of the substrate may be of the same kind or of different kinds.

In the present embodiment, for example, when resist films are formed on both surfaces of a substrate and the resist films are removed after a predetermined process, the residue of the resist remains attached near the outer peripheral edge of the substrate. Is effective for. Specifically, when such residual residue of the resist adheres to the vicinity of the outer peripheral edges of both surfaces of the substrate, the lower surface of the substrate is not arranged horizontally in the subsequent patterning process (photo process),
The patterning accuracy is reduced, and the upper surface of the substrate causes dust when the substrate is clamped in a dry or wet etching process which is a post process. According to the substrate processing apparatus of the present embodiment, the residual residue of these resists can be removed simultaneously or continuously, so that it is possible to process the resists on the upper surface and the lower surface of the substrate in two steps. The efficiency can be improved and the chance of contamination of the substrate can be minimized.

This embodiment is also effective in the Cu process. Specifically, in the Cu process,
If Cu remains in the vicinity of the outer peripheral edge of the substrate, Cu enters the low-k film used as the interlayer insulating film and contaminates it. According to the substrate processing apparatus of this embodiment, Cu remaining in the vicinity of the outer peripheral edges of the upper surface and the lower surface of the substrate can be removed simultaneously or continuously, and contamination by Cu can be prevented.

Finally, a sixth embodiment of the substrate processing apparatus according to the present invention will be described with reference to FIG. In the substrate processing apparatus of the sixth embodiment, as in the third and fourth embodiments, the processing liquid is guided to the upper surface of the substrate along the guide surface, but the processing liquid guided to the upper surface is transferred to the lower surface. It is characterized in that the desired annular regions on both the upper surface A2 and the lower surface A1 of the substrate A are simultaneously processed by being wrapped around.

FIG. 11 is a schematic sectional view of a substrate processing apparatus according to the sixth embodiment of the present invention. As shown in FIG. 11, the substrate processing apparatus 300 includes a holding table 302 that holds the substrate A rotatably from below, and an upper surface side rotating body 304 that is arranged above the substrate A with a space therebetween. There is. Since the holding table 302 is similar to the holding table 2 of the first embodiment, the same components as those of the holding table 2 are designated by the same reference numerals, and the description thereof will be omitted. In addition, the upper surface side rotating body 30
Since 4 is similar to the upper surface side rotating body 154 of the third embodiment, the same components as those of the upper surface side rotating body 154 are designated by the same reference numerals, and the description thereof will be omitted.

The holding table 302 includes a disc portion 306 for holding the substrate in a non-contact manner, an annular portion 308 arranged around the disc portion 306, and a shaft portion concentrically connected to the annular portion 308 under the annular portion 308. 310 and two coupling parts 312, 314 arranged around the shaft part 310.
And a drive unit 6 for rotating the holding table 302 about the rotation axis 4.

The disk portion 306 is arranged concentrically with the rotation axis 4 and is spaced from the substrate A. The disk portion 306 has a disk-shaped porous body 318 arranged flush with a substantially horizontal upper surface 316 forming a chuck surface for holding the substrate in a non-contact manner. The porous body 318 is formed, for example, by sintering material particles such as Teflon (registered trademark) or alumina ceramics so as to have a large number of pores,
The pore size is about 10 to 200 μm. Porous body 318
Is defined to form an area sufficient to float the substrate A in a manner described below, for example 130 mm for an 8-inch substrate. Disk part 306
Further has a space 320 below the porous body 318, a central lumen 322 extending downwardly from the space 320, and a disc portion 306.
Concentric with the extension 324 extending downward.

The annular portion 308 is arranged around the disc portion 306 with a space, and an annular flow path 326 is formed between the disc portion 306 and the annular portion 308. Annular portion 308 has a generally horizontal annular upper surface 328. The annular upper surface 328 is arranged lower than the upper surface 316 of the disc portion 306, and
An annular opening 330 is formed between the annular upper surface 328 of 08 and the upper surface 316 of the disc portion 306. In addition, the annular upper surface 32
8 and the vicinity of the peripheral portion of the lower surface A1 of the substrate A.
Is configured. As a result, the annular opening 330 becomes
Are provided so as to face the space 332 below the lower surface A1 when the substrate A is floating and surround the disk-shaped porous body 318, and the tangential direction of the annular opening 330 is radially outward of the substrate A and the lower surface A1 of the substrate. Make an acute angle away from. This acute angle is 0 degrees in this embodiment. Preferably, the annular upper surface 328 of the annular portion 308 is the disc portion 30.
6 is placed 0.1 to 10 mm lower than the upper surface 316. The annular opening 330 is arranged 2 to 10 mm inward from the outer peripheral edge A3 of the substrate A.

The shaft portion 310 is concentrically connected to the lower portion of the annular portion 308, and has a hole 334 for receiving the extension portion 324 of the disc portion 306 at a distance therefrom. This hole 3
An annular space 336 is formed between 34 and the extension 324, and the annular space 336 communicates with the side surface opening 338. The shaft portion 310 also has a lumen 340 that communicates with the central lumen 322 of the extension 324.
0 communicates with the side opening 342. Shaft part 31
0 is rotatably supported by a bearing 38, and by this bearing 38, the shaft portion 310, that is, the holding base 302.
Is rotatable about the axis of rotation 4.

The coupling portions 312 and 314 have the same structure as the coupling 18 of the first embodiment, and the coupling portions 312 and 314 form the annular space 40 which communicates with the side surface openings 338 and 342, respectively. It has, and is connected to the second gas supply source 344 and the first gas supply source 346. Thus, the second gas supply source 344 includes the connection port 42, the annular gap 40, the side surface opening 338, and the annular space 3.
36, and communicates with the annular opening 330 via the annular channel 326. The first gas supply source 346 includes the connection port 42, the annular gap 40, the side surface opening 342, the lumen 340, and the central lumen 3.
22, the space 320 and the pores of the porous body 318 communicate with each other. Further, a control device (not shown) that controls the flow rates of the first gas and the second gas so as to be adjusted is provided.

Next, the operation of the substrate processing apparatus 300 of the sixth embodiment will be described.

First, the upper surface side rotating body 304 is attached to the holding table 302.
The first gas supply source 34 in an offset state from above.
6 to operate the first gas to connect the first gas to the connection port 42 of the coupling portion 314, the annular gap 40, the side opening 342, the lumen 340,
It is ejected from the pores of the porous body 318 through the central lumen 322 and the space 320. The first gas is preferably high-purity nitrogen gas, but may be other high-purity inert gas or sufficiently purified air or other gas.

Next, the substrate A is transferred onto the holding table 2 by a substrate transfer device (not shown) or the like. At this time,
Since the first gas is jetted from the pores of the porous body 318, the substrate A is transferred from the substrate transfer device to the holding table 302 in a floating state without coming into contact with the holding table 302. To explain the levitation, the first gas injected from the porous body 318 becomes a large number of thin upward flows and the substrate A
And hit the substrate A upward. The large number of flows bounced from the substrate A collide with each other to generate a static pressure, which constitutes a so-called air bearing to generate an air cushion effect.

Then, the actuator 70 is operated,
The eccentric projections 68 of the pins 64 are respectively brought into contact with the substrate A,
The substrate A is arranged concentrically with the rotation axis 4. Then, the upper surface side rotating body 304 is arranged above the substrate A and concentrically therewith. Then, the motor 76 of the drive unit 6 is operated to rotate the holding table 302 and the substrate A. The rotation speed is usually in the range of about 200 to 5000 rpm.

Then, the chemical solution is guided to the upper surface A2 of the substrate A. This operation is similar to that of the third embodiment, and therefore its explanation is omitted. The processing liquid guided to the upper surface A2 of the substrate is rotated by the centrifugal force of the substrate A, and thus the upper surface A2 of the substrate is treated.
To the outer peripheral edge A3 of the substrate A. Thereby, the desired annular region on the upper surface A2 of the substrate can be processed. Most of the processing liquid is flown further outward from the outer peripheral edge A3, but the remaining processing liquid is transferred from the outer peripheral edge A3 of the substrate A to the substrate A due to surface tension between the processing liquid and the substrate A.
Try to go around the lower surface A1 of. The processing liquid that has tried to flow around the substrate lower surface A1 is pushed back toward the substrate outer peripheral edge A3 by the flow of the first gas that floats the substrate A.

Next, the second gas supply source 344 is operated to transfer the second gas from the annular opening 330 through the connection port 42 of the coupling portion 312, the annular gap 40, the side opening 338, the annular space 336, the annular flow passage 326. Make it jet. Like the first gas, the second gas is preferably high-purity nitrogen gas, but may be other high-purity inert gas or sufficiently purified air. The second injected from the annular opening 330
The gas flows radially outward, but the annular opening 3
Since the tangential direction of 30 is 0 degree with the lower surface A1 of the substrate A, the second gas is prevented from directly colliding with the lower surface A1 of the substrate A, and in the lower space 332 near the outer peripheral edge of the substrate A. The flow of the second gas is not disturbed. Therefore, the inside of the void 332 is decompressed by the so-called ejector effect,
The wraparound of the processing liquid from the upper surface A2 of the substrate A to the lower surface A1 is positively promoted.

The control device (not shown) for adjusting the flow rates of the first gas and the second gas controls the suppression of the wraparound by the first gas and the promotion of the wraparound by the second gas to raise the substrate A. At the same time, it is possible to control the radial position of the processing liquid from the upper surface A2 of the substrate A to the lower surface A1. This allows processing of the desired annular area on the lower surface of the substrate.

As a result, in the sixth embodiment, the desired annular regions on both the upper surface A2 and the lower surface A1 of the substrate A can be simultaneously treated with the same type of treatment liquid. For example, as described in the fifth embodiment, it is effective to remove residual dust and Cu of the resist adhering to the vicinity of the outer peripheral edges of the upper surface and the lower surface of the substrate.

[0155]

According to the substrate processing apparatus and method of the present invention, a part of the surface of the substrate can be precisely and uniformly processed with the processing liquid.

Further, according to the substrate processing apparatus and method of the present invention, the processing liquid can be supplied from the lower side to the lower surface of the substrate to uniformly and precisely process the desired annular region on the lower surface of the substrate.

Further, according to the substrate processing apparatus and method of the present invention, the desired annular region on the upper surface of the substrate can be processed uniformly and precisely.

Further, according to the substrate processing apparatus and method of the present invention, the desired annular region on the upper surface of the substrate and the desired annular region on the lower surface of the substrate can be uniformly and precisely processed simultaneously or continuously.

[Brief description of drawings]

FIG. 1 is a schematic cross-sectional view of a first embodiment of a substrate processing apparatus according to the present invention.

FIG. 2 is an example of a cross-sectional contour of an annular guide surface.

FIG. 3 is an example of a cross-sectional contour of an annular guide surface.

FIG. 4 is an example of a cross-sectional contour of an annular guide surface.

FIG. 5 is an example of a cross-sectional contour of an annular guide surface.

6 is a plan view of the outer annular portion 20, showing the connecting body 58 in a section taken along line 6-6 in FIG. 1. FIG.

FIG. 7 is a schematic cross-sectional view of a second embodiment of the substrate processing apparatus according to the present invention.

FIG. 8 is a schematic cross-sectional view of a third embodiment of the substrate processing apparatus according to the present invention.

FIG. 9 is a schematic cross-sectional view of a fourth embodiment of the substrate processing apparatus according to the present invention.

FIG. 10 is a schematic cross-sectional view of a fifth embodiment of the substrate processing apparatus according to the present invention.

FIG. 11 is a schematic cross-sectional view of a sixth embodiment of the substrate processing apparatus according to the present invention.

[Explanation of symbols]

1, 100, 150, 200, 250, 300 Substrate processing apparatus 2, 152, 302 Holding table 8, 10 Lower nozzle 14 Central disk portion 18 Coupling 20 Outer annular portion 22 Upper surface 30 Center opening 32 Lumen 44 Gas supply source 50 annular guide surface 56 annular space 58 connected body 58a connected body inlet surface 58b connected body outlet surface 58d connected body groove surfaces 84, 86 processing liquid supply ports 88, 90 processing liquid supply sources 154, 202, 304 upper surface side rotating body 160 Inner rotating portion 162 Outer annular rotating portion 164, 166 Intermediate annular rotating portion 170a, 170b, 170c Annular flow passage 172a, 172b, 172c Trumpet-shaped guide surface 176a, 176b, 176c Annular outlet orifice 178a, 178b, 178c Treatment liquid supply nozzle 180a , 180b, 180c Treatment liquid supply source 182 Opening 206 Pin 31 Disk-shaped porous body 330 annular opening 344 upper surface A4 board of the periphery of the lower surface A2 substrate of the second gas supply source 346 first gas supply source A substrate A1 substrate

Claims (24)

[Claims] 1. A desired annular area on a surface of a substrate, which has a processing solution supply means for supplying a processing solution for processing a surface of a substrate held rotatably in a substantially horizontal plane to a desired annular area on the surface of the substrate. In the substrate processing apparatus for processing the substrate, the processing liquid supply means is configured so that the inner peripheral edge of the desired annular region on the surface of the substrate faces the inner peripheral edge in the vicinity of the inner peripheral edge and the outer peripheral edge forms the largest diameter portion. Has an extending annular guide surface, which is rotatable concentrically with the substrate,
The substrate processing apparatus is characterized in that the processing liquid is supplied to the annular guide surface. 2. A processing liquid supply means for supplying a processing liquid for processing the lower surface of the substrate rotatably held in a substantially horizontal plane to the lower surface of the substrate, and supplying the processing liquid to the lower surface of the substrate. In a substrate processing apparatus for processing a desired annular area of a lower surface of a substrate, which has a limiting means for restricting to a desired annular area of the lower surface, the processing liquid supply means is rotatable concentrically with the substrate and from the bottom of the substrate Has a trumpet-shaped guiding surface that expands radially outward of the substrate toward the lower surface of the substrate and extends to an end peripheral edge in the vicinity of the inner peripheral edge of the lower surface of the substrate that faces the inner peripheral edge of the desired annular region. The processing liquid is supplied onto the flat guide surface, and the control means is constituted by an edge of the trumpet-shaped guide surface. 3. A rotatable central disk portion whose upper surface forms a chuck surface for holding a substrate from below, and a rotatable outer annular portion which is spaced apart from and concentric with the central disk portion. And, the trumpet-shaped guide surface is formed in the outer annular portion so as to face an annular space formed between the central disk portion and the outer annular portion,
The processing liquid supply means further has a processing liquid supply port for supplying the processing liquid onto the trumpet-shaped guide surface, and the processing liquid supply port is fixedly arranged in the annular space. Two
The substrate processing apparatus according to. 4. The substrate processing apparatus according to claim 3, wherein a plurality of the processing liquid supply ports are provided in a circumferential direction of the annular space. 5. The substrate processing apparatus according to claim 4, wherein different processing liquids are supplied from different processing liquid supply ports. 6. The substrate processing apparatus according to claim 3, wherein vane means for assisting in guiding the processing liquid to the lower surface of the substrate are provided on the trumpet-shaped guide surface. 7. The substrate processing apparatus according to claim 3, wherein the central disk portion has a substrate floating mechanism for floating and holding the substrate from the chuck surface. 8. The substrate processing apparatus according to claim 3, wherein the central disk portion has a gas supply means for supplying a gas that flows radially outward from the central portion of the lower surface of the substrate. 9. A processing liquid supply means for supplying a processing liquid for processing the upper surface of the substrate rotatably held in a substantially horizontal plane to the upper surface of the substrate, and supplying the processing liquid to the upper surface of the substrate. In the substrate processing apparatus for processing the desired annular region of the upper surface of the substrate, which has a limiting means for limiting to the desired annular area of the upper surface, the processing liquid supply means is a radial direction of the substrate from the upper side of the substrate toward the upper surface of the substrate. There is a trumpet-shaped guide surface that expands outwardly and extends to an end edge near the inner edge of the desired annular region on the upper surface of the substrate, and the treatment liquid is placed on the trumpet-shaped guide surface. The substrate processing apparatus, wherein the control means is provided with an end peripheral edge of the trumpet-shaped guide surface that is rotatable concentrically with the substrate. 10. A processing liquid supply means for supplying a processing liquid for processing the upper surface of a substrate held rotatably in a substantially horizontal plane to the upper surface of the substrate, and supplying the processing liquid to the upper surface of the substrate. In the substrate processing apparatus for processing the desired annular region of the upper surface of the substrate, which has a limiting unit for limiting the desired annular region of the upper surface, the processing liquid supply unit is arranged to face the inner peripheral edge of the desired annular region of the upper surface of the substrate. Further, there is an annular flow path extending obliquely downward with respect to the upper surface of the substrate and outward in the radial direction up to the annular outlet orifice near the inner peripheral edge, and the processing liquid is supplied to this annular flow path, and the limiting means includes the substrate and A substrate processing apparatus comprising an annular outlet orifice of the annular flow channel which is concentrically rotatable. 11. The processing liquid supply means has an upper surface side rotating body which is disposed above the substrate and spaced apart from the substrate and is rotatable concentrically with the substrate. The upper surface side rotating body is an inner rotating portion. And an outer annular rotating part that is spaced apart from and surrounds the inner rotating part, and the annular outlet orifice and the annular flow path are formed between the inner rotating part and the outer rotating part. The processing liquid supply means further has a processing liquid supply port for supplying the processing liquid to the annular flow path, and the processing liquid supply port is arranged in a fixed position so as to face the annular flow path. The substrate processing apparatus according to claim 10, which comprises: 12. The upper rotating body further has an intermediate annular rotating portion arranged between the inner rotating portion and the outer annular rotating portion and at a distance from the intermediate rotating portion, the inner rotating portion. The first annular outlet orifice and the annular flow path between the intermediate annular rotating portion and the outer rotating portion, and the second annular outlet orifice and the annular portion between the intermediate annular rotating portion and the outer rotating portion. The substrate processing apparatus according to claim 11, wherein the flow path is configured. 13. The substrate processing apparatus according to claim 11, wherein a plurality of the processing liquid supply ports are provided. 14. The substrate processing apparatus according to claim 11, wherein the upper surface side rotating body is vertically movable relative to the substrate. 15. The substrate processing apparatus according to claim 11, wherein the inner rotating portion has a gas supply means for supplying a gas that flows radially outward from the center of the upper surface of the substrate. 16. The substrate processing apparatus according to claim 11, wherein the upper surface side rotating body holds a substrate rotatably in a substantially horizontal direction. 17. A holding base for holding the substrate from below is further provided, and the holding base extends from the upper surface of the substrate to the lower surface, and the facilitating means for facilitating the processing liquid to flow from the upper surface to the lower surface of the substrate. 13. The method according to claim 11 or 12, further comprising: a push-back unit that pushes back the resulting processing liquid; and a control unit that controls the accelerating unit and the pushing-back unit so as to adjust the radial position where the processing liquid wraps around the lower surface of the substrate. Substrate processing equipment. 18. A bottom surface processing liquid supply means for supplying a processing liquid for processing a lower surface of a substrate held rotatably in a substantially horizontal plane to the lower surface of the substrate, and supplying the processing liquid to the lower surface of the substrate Lower surface limiting means for restricting the desired annular region on the lower surface of the substrate, upper surface processing liquid supply means for supplying the processing liquid for processing the upper surface of the substrate to the upper surface of the substrate, and supply of the processing liquid to the upper surface of the substrate for the substrate. A substrate processing apparatus for processing the desired annular region on the lower surface of the substrate and the desired annular region on the upper surface of the substrate at the same time or continuously, The means is rotatable concentrically with the substrate, expands radially outward of the substrate from the lower side of the substrate toward the lower surface of the substrate, and is arranged to face the inner peripheral edge of the desired annular region of the lower surface of the substrate. Extends to the edge near the edge A treatment liquid for treating the lower surface of the substrate is supplied onto the trumpet-shaped guide surface, and the lower surface control means is constituted by an edge of the trumpet-shaped guide surface. The supply means has an annular flow path extending obliquely downward with respect to the upper surface of the substrate and radially outward to an annular outlet orifice near the inner peripheral edge of the desired annular region on the upper surface of the substrate, the annular outlet orifice being disposed in the vicinity of the inner peripheral edge. A processing liquid for processing the upper surface of the substrate is supplied to the annular flow path, and the upper surface limiting means is constituted by the annular exit orifice rotatable concentrically with the substrate. 19. The substrate processing apparatus according to claim 18, wherein the processing liquid for processing the upper surface of the substrate and the processing liquid for processing the lower surface of the substrate are the same. 20. The substrate processing apparatus according to claim 18, wherein the processing liquid for processing the upper surface of the substrate and the processing liquid for processing the lower surface of the substrate are different. 21. A substrate processing method for treating a desired annular region on a surface of a substrate, comprising the steps of rotating the substrate while holding it in a substantially horizontal plane, and arranging the substrate so as to face an inner peripheral edge of the desired annular region on the surface of the substrate. A step of arranging an annular guide surface concentric with the substrate to the edge near the inner edge and forming the edge having the largest diameter, and a treatment liquid for treating the surface of the substrate along the annular guide surface. To guide the processing liquid to the inner peripheral edge of the desired annular region on the surface of the substrate, and to process the desired annular region on the surface of the substrate using the centrifugal force acting on the processing liquid. And a substrate processing method comprising: 22. A substrate processing method for processing a desired annular region on a lower surface of a substrate, comprising the steps of rotating the substrate while holding it in a substantially horizontal plane, and expanding the substrate outward in the radial direction toward the lower surface of the substrate. A step of arranging a trumpet-shaped guide surface concentrically with the substrate, which extends to an end edge near the inner edge of the desired annular region on the lower surface of the substrate opposite to the inner edge of the desired annular region, and treating liquid for treating the lower surface of the substrate. Supplying the treatment liquid onto the trumpet-shaped guide surface; rotating the trumpet-shaped guide surface concentrically with the substrate; and utilizing the centrifugal force acting on the treatment liquid to guide the treatment liquid from below the substrate. Guiding to the inner peripheral edge of the desired annular region on the lower surface of the substrate, and treating the desired annular area on the lower surface of the substrate by utilizing the centrifugal force acting on the processing liquid. Is characterized by having Plate processing method. 23. A substrate processing method for treating a desired annular region on an upper surface of a substrate, the method comprising: rotating the substrate while holding it in a substantially horizontal plane; and arranging the substrate to face an inner peripheral edge of the desired annular region on the upper surface of the substrate. A ring flow path extending obliquely downward and radially outward with respect to the upper surface of the substrate to the annular outlet orifice near the inner peripheral edge and concentric with the substrate; The process liquid is supplied to the inner peripheral edge portion of the desired annular region on the upper surface of the substrate by using the centrifugal force acting on the processing liquid and the annular outlet orifice through the passage, and the desired annular region on the upper surface of the substrate is removed. A substrate processing method comprising: a step of processing. 24. A substrate processing method for simultaneously or continuously processing a desired annular region on an upper surface of a substrate and a desired annular region on a lower surface of the substrate, the substrate being rotated while being held in a substantially horizontal plane. The trumpet-shaped guide surface is arranged concentrically with the substrate so as to expand radially outward of the substrate toward the lower surface of the substrate and extend to an end peripheral edge in the vicinity of the inner peripheral edge of the desired annular region of the lower surface of the substrate opposite to the inner peripheral edge. The step of supplying the processing liquid for processing the lower surface of the substrate onto the trumpet-shaped guide surface, the step of rotating the trumpet-shaped guide surface concentrically with the substrate, and the centrifugal force acting on the processing solution. Guide the processing liquid from below the substrate to the edge of the trumpet-shaped guide surface and supply it to the inner peripheral edge of the desired annular region on the lower surface of the substrate, and the inner peripheral edge of the desired annular region on the upper surface of the substrate. Near the inner peripheral edge that is placed opposite Arranging an annular flow channel extending obliquely downward and radially outward with respect to the upper surface of the substrate up to the annular outlet orifice of the substrate concentrically with the substrate; Using the centrifugal force acting on the processing liquid, the step of guiding the liquid to the outlet orifice, the centrifugal force acting on the processing liquid, and supplying the processing liquid to the inner peripheral edge of the desired annular region on the upper surface of the substrate. And a step of processing the desired annular region on the upper surface of the substrate and the desired annular region on the lower surface of the substrate simultaneously or successively.