JP2006523960A - 整合した熱膨張係数を有する複合基体上の付着されたウエハ構造を有する装置構造を処理する方法 - Google Patents

整合した熱膨張係数を有する複合基体上の付着されたウエハ構造を有する装置構造を処理する方法 Download PDF

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JP2006523960A
JP2006523960A JP2006510101A JP2006510101A JP2006523960A JP 2006523960 A JP2006523960 A JP 2006523960A JP 2006510101 A JP2006510101 A JP 2006510101A JP 2006510101 A JP2006510101 A JP 2006510101A JP 2006523960 A JP2006523960 A JP 2006523960A
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Prior art keywords
composite substrate
processing
substrate structure
thermal expansion
wafer
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JP2006510101A
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Japanese (ja)
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JP2006523960A5 (enExample
Inventor
ピーターソン、ジェフレイ・エム．
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Raytheon Co
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Raytheon Co
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Publication of JP2006523960A publication Critical patent/JP2006523960A/ja
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
    • H01L21/2003—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy characterised by the substrate
    • H01L21/2007—Bonding of semiconductor wafers to insulating substrates or to semiconducting substrates using an intermediate insulating layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
    • H01L21/76251—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Recrystallisation Techniques (AREA)
  • Laminated Bodies (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
JP2006510101A 2003-04-18 2004-04-16 整合した熱膨張係数を有する複合基体上の付着されたウエハ構造を有する装置構造を処理する方法 Pending JP2006523960A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/418,870 US6884645B2 (en) 2003-04-18 2003-04-18 Method for preparing a device structure having a wafer structure deposited on a composite substrate having a matched coefficient of thermal expansion
PCT/US2004/011712 WO2004095554A2 (en) 2003-04-18 2004-04-16 Method for preparing a device structure having a wafer structure deposited on a composite substrate having a matched coefficient of thermal expansion

Publications (2)

Publication Number Publication Date
JP2006523960A true JP2006523960A (ja) 2006-10-19
JP2006523960A5 JP2006523960A5 (enExample) 2007-02-22

Family

ID=33159201

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2006510101A Pending JP2006523960A (ja) 2003-04-18 2004-04-16 整合した熱膨張係数を有する複合基体上の付着されたウエハ構造を有する装置構造を処理する方法

Country Status (5)

Country Link
US (1) US6884645B2 (enExample)
EP (1) EP1552548A2 (enExample)
JP (1) JP2006523960A (enExample)
TW (1) TWI251353B (enExample)
WO (1) WO2004095554A2 (enExample)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7612895B2 (en) * 2007-05-18 2009-11-03 Suss Microtec Inc Apparatus and method for in-situ monitoring of wafer bonding time
DE102009007625A1 (de) 2008-11-14 2010-05-20 Osram Opto Semiconductors Gmbh Verbundsubstrat für einen Halbleiterchip
CN113376403B (zh) * 2021-05-12 2023-02-28 北京航天控制仪器研究所 一种有冗余功能的mems加速度计检测模块及其制作方法

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57153445A (en) * 1981-03-17 1982-09-22 Nec Corp Sos semiconductor substrate
JPS61182215A (ja) * 1985-02-08 1986-08-14 Toshiba Corp 半導体基板の製造方法
JPH01189909A (ja) * 1988-01-26 1989-07-31 Nippon Telegr & Teleph Corp <Ntt> 複合半導体基板
JPH04171811A (ja) * 1990-11-05 1992-06-19 Olympus Optical Co Ltd 半導体装置
JPH07307259A (ja) * 1994-03-16 1995-11-21 Nec Corp Ｓｉ基板上化合物半導体積層構造の製造方法
JPH104103A (ja) * 1996-03-14 1998-01-06 He Holdings Inc Dba Hughes Electron シリコン基板上における双晶のない（１１１）方向のｉｉ−ｖｉ族合金フィルムのエピタキシャル成長方法
JPH11176758A (ja) * 1997-10-10 1999-07-02 Toyoda Gosei Co Ltd 半導体素子
JP2003218031A (ja) * 2002-01-28 2003-07-31 Toshiba Ceramics Co Ltd 半導体ウェーハの製造方法

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5365088A (en) * 1988-08-02 1994-11-15 Santa Barbara Research Center Thermal/mechanical buffer for HgCdTe/Si direct hybridization
US5849627A (en) * 1990-02-07 1998-12-15 Harris Corporation Bonded wafer processing with oxidative bonding
US5308980A (en) * 1991-02-20 1994-05-03 Amber Engineering, Inc. Thermal mismatch accommodated infrared detector hybrid array
US5585624A (en) * 1995-03-23 1996-12-17 Rockwell International Corporation Apparatus and method for mounting and stabilizing a hybrid focal plane array
US5610389A (en) * 1995-03-23 1997-03-11 Rockwell International Corporation Stabilized hybrid focal plane array structure
JP2671859B2 (ja) * 1995-04-14 1997-11-05 日本電気株式会社 赤外線検出素子及びその製造方法
US5714760A (en) * 1995-06-07 1998-02-03 Boeing North American, Inc. Imbalanced layered composite focal plane array structure
US5846850A (en) * 1995-09-05 1998-12-08 Raytheon Ti Systems, Inc. Double sided interdiffusion process and structure for a double layer heterojunction focal plane array
US5770889A (en) * 1995-12-29 1998-06-23 Lsi Logic Corporation Systems having advanced pre-formed planar structures
US6320206B1 (en) * 1999-02-05 2001-11-20 Lumileds Lighting, U.S., Llc Light emitting devices having wafer bonded aluminum gallium indium nitride structures and mirror stacks
US6498113B1 (en) * 2001-06-04 2002-12-24 Cbl Technologies, Inc. Free standing substrates by laser-induced decoherency and regrowth
US6562127B1 (en) * 2002-01-16 2003-05-13 The United States Of America As Represented By The Secretary Of The Navy Method of making mosaic array of thin semiconductor material of large substrates

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57153445A (en) * 1981-03-17 1982-09-22 Nec Corp Sos semiconductor substrate
JPS61182215A (ja) * 1985-02-08 1986-08-14 Toshiba Corp 半導体基板の製造方法
JPH01189909A (ja) * 1988-01-26 1989-07-31 Nippon Telegr & Teleph Corp <Ntt> 複合半導体基板
JPH04171811A (ja) * 1990-11-05 1992-06-19 Olympus Optical Co Ltd 半導体装置
JPH07307259A (ja) * 1994-03-16 1995-11-21 Nec Corp Ｓｉ基板上化合物半導体積層構造の製造方法
JPH104103A (ja) * 1996-03-14 1998-01-06 He Holdings Inc Dba Hughes Electron シリコン基板上における双晶のない（１１１）方向のｉｉ−ｖｉ族合金フィルムのエピタキシャル成長方法
JPH11176758A (ja) * 1997-10-10 1999-07-02 Toyoda Gosei Co Ltd 半導体素子
JP2003218031A (ja) * 2002-01-28 2003-07-31 Toshiba Ceramics Co Ltd 半導体ウェーハの製造方法

Also Published As

Publication number Publication date
EP1552548A2 (en) 2005-07-13
WO2004095554A3 (en) 2004-12-23
WO2004095554A2 (en) 2004-11-04
US6884645B2 (en) 2005-04-26
TWI251353B (en) 2006-03-11
US20040209440A1 (en) 2004-10-21
TW200611423A (en) 2006-04-01

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