JP2006518548A - 周波数変換のための装置および方法 - Google Patents

周波数変換のための装置および方法 Download PDF

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Publication number
JP2006518548A
JP2006518548A JP2006502641A JP2006502641A JP2006518548A JP 2006518548 A JP2006518548 A JP 2006518548A JP 2006502641 A JP2006502641 A JP 2006502641A JP 2006502641 A JP2006502641 A JP 2006502641A JP 2006518548 A JP2006518548 A JP 2006518548A
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light
emitting device
light emitting
frequency
layer
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JP2006502641A
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Japanese (ja)
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JP2006518548A5 (https=
Inventor
ニコライ レデントソヴ，
ヴィタリー シュチュキン，
Original Assignee
ピービーシー レーザーズ リミテッド
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Priority claimed from US10/367,824 external-priority patent/US6928099B2/en
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Publication of JP2006518548A publication Critical patent/JP2006518548A/ja
Publication of JP2006518548A5 publication Critical patent/JP2006518548A5/ja
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/14—External cavity lasers
    • H01S5/141—External cavity lasers using a wavelength selective device, e.g. a grating or etalon
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
    • H01S3/106—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating by controlling devices placed within the cavity
    • H01S3/108—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating by controlling devices placed within the cavity using non-linear optical devices, e.g. exhibiting Brillouin or Raman scattering
    • H01S3/109—Frequency multiplication, e.g. harmonic generation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/041—Optical pumping
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/1082—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region with a special facet structure, e.g. structured, non planar, oblique
    • H01S5/1085—Oblique facets
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/2004—Confining in the direction perpendicular to the layer structure
    • H01S5/2018—Optical confinement, e.g. absorbing-, reflecting- or waveguide-layers
    • H01S5/2027—Reflecting region or layer, parallel to the active layer, e.g. to modify propagation of the mode in the laser or to influence transverse modes

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Plasma & Fusion (AREA)
  • Theoretical Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Biophysics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Semiconductor Lasers (AREA)
  • Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)
  • Lasers (AREA)
JP2006502641A 2003-02-19 2004-02-18 周波数変換のための装置および方法 Pending JP2006518548A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/367,824 US6928099B2 (en) 2001-09-04 2003-02-19 Apparatus for and method of frequency conversion
PCT/IL2004/000148 WO2004075362A2 (en) 2003-02-19 2004-02-18 Apparatus for and method of frequency conversion

Publications (2)

Publication Number Publication Date
JP2006518548A true JP2006518548A (ja) 2006-08-10
JP2006518548A5 JP2006518548A5 (https=) 2007-04-05

Family

ID=32907631

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2006502641A Pending JP2006518548A (ja) 2003-02-19 2004-02-18 周波数変換のための装置および方法

Country Status (6)

Country Link
EP (1) EP1595316A4 (https=)
JP (1) JP2006518548A (https=)
KR (1) KR20050107439A (https=)
CN (1) CN1778022A (https=)
TW (1) TWI289220B (https=)
WO (1) WO2004075362A2 (https=)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103682952A (zh) * 2012-09-13 2014-03-26 福州高意通讯有限公司 具有输出光路标示的不可见光激光器及其标示方法
WO2024225458A1 (ja) * 2023-04-28 2024-10-31 国立大学法人東京工業大学 単一光子源装置

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100668329B1 (ko) 2005-02-16 2007-01-12 삼성전자주식회사 변조기 내장형 광펌핑 반도체 레이저 장치
JP2007165562A (ja) * 2005-12-13 2007-06-28 Seiko Epson Corp 光源装置、および光源装置を備えたプロジェクタ
US7660500B2 (en) 2007-05-22 2010-02-09 Epicrystals Oy Light emitting array
KR100864696B1 (ko) * 2008-03-03 2008-10-23 국방과학연구소 공간적 광 변조 레이저 신호발생장치
KR101053354B1 (ko) * 2008-10-21 2011-08-01 김정수 외부 공진기를 이용한 파장 변환형 반도체 레이저
CN101867148B (zh) * 2009-04-15 2012-05-23 中国科学院半导体研究所 带有光子晶体反射面和垂直出射面的fp腔激光器
CN103427906B (zh) * 2013-08-16 2016-08-10 北京邮电大学 一种利用光子变频技术传输多业务信号的系统和方法
US9312662B1 (en) * 2014-09-30 2016-04-12 Lumentum Operations Llc Tunable laser source
CN113777857A (zh) * 2021-08-25 2021-12-10 成都理工大学 一种基于砷化铝镓的宽带倍频方法及系统

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08213686A (ja) * 1994-11-14 1996-08-20 Mitsui Petrochem Ind Ltd 波長安定化光源

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4063189A (en) * 1976-04-08 1977-12-13 Xerox Corporation Leaky wave diode laser
US5175741A (en) * 1989-06-07 1992-12-29 Fuji Photo Film Co., Ltd. Optical wavelength conversion method and laser-diode-pumped solid-state laser
US5321718A (en) * 1993-01-28 1994-06-14 Sdl, Inc. Frequency converted laser diode and lens system therefor
US6241720B1 (en) * 1995-02-04 2001-06-05 Spectra Physics, Inc. Diode pumped, multi axial mode intracavity doubled laser
US5912910A (en) * 1996-05-17 1999-06-15 Sdl, Inc. High power pumped mid-IR wavelength systems using nonlinear frequency mixing (NFM) devices
RU2133534C1 (ru) * 1997-08-08 1999-07-20 Государственное предприятие Научно-исследовательский институт "Полюс" Инжекционный лазер
WO1999053358A1 (en) * 1998-04-09 1999-10-21 Ceramoptec Industries, Inc. Frequency conversion combiner system for diode lasers

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08213686A (ja) * 1994-11-14 1996-08-20 Mitsui Petrochem Ind Ltd 波長安定化光源

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103682952A (zh) * 2012-09-13 2014-03-26 福州高意通讯有限公司 具有输出光路标示的不可见光激光器及其标示方法
WO2024225458A1 (ja) * 2023-04-28 2024-10-31 国立大学法人東京工業大学 単一光子源装置

Also Published As

Publication number Publication date
EP1595316A4 (en) 2006-08-23
TW200424729A (en) 2004-11-16
EP1595316A2 (en) 2005-11-16
WO2004075362A2 (en) 2004-09-02
WO2004075362A3 (en) 2005-09-01
CN1778022A (zh) 2006-05-24
KR20050107439A (ko) 2005-11-11
TWI289220B (en) 2007-11-01

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