KR20050107439A - 주파수 변환장치 및 변환방법 - Google Patents
주파수 변환장치 및 변환방법 Download PDFInfo
- Publication number
- KR20050107439A KR20050107439A KR1020057015317A KR20057015317A KR20050107439A KR 20050107439 A KR20050107439 A KR 20050107439A KR 1020057015317 A KR1020057015317 A KR 1020057015317A KR 20057015317 A KR20057015317 A KR 20057015317A KR 20050107439 A KR20050107439 A KR 20050107439A
- Authority
- KR
- South Korea
- Prior art keywords
- light
- light emitting
- frequency
- emitting device
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 238000000034 method Methods 0.000 title claims description 137
- 238000006243 chemical reaction Methods 0.000 title claims description 69
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- 230000003287 optical effect Effects 0.000 claims abstract description 82
- 239000004065 semiconductor Substances 0.000 claims abstract description 48
- 239000010410 layer Substances 0.000 claims description 208
- 230000007547 defect Effects 0.000 claims description 76
- 238000000576 coating method Methods 0.000 claims description 56
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- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 14
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- RPQDHPTXJYYUPQ-UHFFFAOYSA-N indium arsenide Chemical compound [In]#[As] RPQDHPTXJYYUPQ-UHFFFAOYSA-N 0.000 claims description 9
- 229910005542 GaSb Inorganic materials 0.000 claims description 8
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- 229910004298 SiO 2 Inorganic materials 0.000 description 2
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- 229910017401 Au—Ge Inorganic materials 0.000 description 1
- 229910018885 Pt—Au Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
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- 230000006903 response to temperature Effects 0.000 description 1
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- 229910052714 tellurium Inorganic materials 0.000 description 1
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/14—External cavity lasers
- H01S5/141—External cavity lasers using a wavelength selective device, e.g. a grating or etalon
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
- H01S3/106—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating by controlling devices placed within the cavity
- H01S3/108—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating by controlling devices placed within the cavity using non-linear optical devices, e.g. exhibiting Brillouin or Raman scattering
- H01S3/109—Frequency multiplication, e.g. harmonic generation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
- H01S5/041—Optical pumping
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/1082—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region with a special facet structure, e.g. structured, non planar, oblique
- H01S5/1085—Oblique facets
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/2004—Confining in the direction perpendicular to the layer structure
- H01S5/2018—Optical confinement, e.g. absorbing-, reflecting- or waveguide-layers
- H01S5/2027—Reflecting region or layer, parallel to the active layer, e.g. to modify propagation of the mode in the laser or to influence transverse modes
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Nanotechnology (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Plasma & Fusion (AREA)
- Theoretical Computer Science (AREA)
- Mathematical Physics (AREA)
- Life Sciences & Earth Sciences (AREA)
- Biophysics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Semiconductor Lasers (AREA)
- Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)
- Lasers (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US10/367,824 | 2003-02-19 | ||
| US10/367,824 US6928099B2 (en) | 2001-09-04 | 2003-02-19 | Apparatus for and method of frequency conversion |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| KR20050107439A true KR20050107439A (ko) | 2005-11-11 |
Family
ID=32907631
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020057015317A Withdrawn KR20050107439A (ko) | 2003-02-19 | 2004-02-18 | 주파수 변환장치 및 변환방법 |
Country Status (6)
| Country | Link |
|---|---|
| EP (1) | EP1595316A4 (https=) |
| JP (1) | JP2006518548A (https=) |
| KR (1) | KR20050107439A (https=) |
| CN (1) | CN1778022A (https=) |
| TW (1) | TWI289220B (https=) |
| WO (1) | WO2004075362A2 (https=) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100864696B1 (ko) * | 2008-03-03 | 2008-10-23 | 국방과학연구소 | 공간적 광 변조 레이저 신호발생장치 |
| KR101053354B1 (ko) * | 2008-10-21 | 2011-08-01 | 김정수 | 외부 공진기를 이용한 파장 변환형 반도체 레이저 |
Families Citing this family (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100668329B1 (ko) | 2005-02-16 | 2007-01-12 | 삼성전자주식회사 | 변조기 내장형 광펌핑 반도체 레이저 장치 |
| JP2007165562A (ja) * | 2005-12-13 | 2007-06-28 | Seiko Epson Corp | 光源装置、および光源装置を備えたプロジェクタ |
| US7660500B2 (en) | 2007-05-22 | 2010-02-09 | Epicrystals Oy | Light emitting array |
| CN101867148B (zh) * | 2009-04-15 | 2012-05-23 | 中国科学院半导体研究所 | 带有光子晶体反射面和垂直出射面的fp腔激光器 |
| CN103682952A (zh) * | 2012-09-13 | 2014-03-26 | 福州高意通讯有限公司 | 具有输出光路标示的不可见光激光器及其标示方法 |
| CN103427906B (zh) * | 2013-08-16 | 2016-08-10 | 北京邮电大学 | 一种利用光子变频技术传输多业务信号的系统和方法 |
| US9312662B1 (en) * | 2014-09-30 | 2016-04-12 | Lumentum Operations Llc | Tunable laser source |
| CN113777857A (zh) * | 2021-08-25 | 2021-12-10 | 成都理工大学 | 一种基于砷化铝镓的宽带倍频方法及系统 |
| WO2024225458A1 (ja) * | 2023-04-28 | 2024-10-31 | 国立大学法人東京工業大学 | 単一光子源装置 |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4063189A (en) * | 1976-04-08 | 1977-12-13 | Xerox Corporation | Leaky wave diode laser |
| US5175741A (en) * | 1989-06-07 | 1992-12-29 | Fuji Photo Film Co., Ltd. | Optical wavelength conversion method and laser-diode-pumped solid-state laser |
| US5321718A (en) * | 1993-01-28 | 1994-06-14 | Sdl, Inc. | Frequency converted laser diode and lens system therefor |
| US6241720B1 (en) * | 1995-02-04 | 2001-06-05 | Spectra Physics, Inc. | Diode pumped, multi axial mode intracavity doubled laser |
| JPH08213686A (ja) * | 1994-11-14 | 1996-08-20 | Mitsui Petrochem Ind Ltd | 波長安定化光源 |
| US5912910A (en) * | 1996-05-17 | 1999-06-15 | Sdl, Inc. | High power pumped mid-IR wavelength systems using nonlinear frequency mixing (NFM) devices |
| RU2133534C1 (ru) * | 1997-08-08 | 1999-07-20 | Государственное предприятие Научно-исследовательский институт "Полюс" | Инжекционный лазер |
| WO1999053358A1 (en) * | 1998-04-09 | 1999-10-21 | Ceramoptec Industries, Inc. | Frequency conversion combiner system for diode lasers |
-
2004
- 2004-02-18 CN CNA2004800105046A patent/CN1778022A/zh active Pending
- 2004-02-18 WO PCT/IL2004/000148 patent/WO2004075362A2/en not_active Ceased
- 2004-02-18 TW TW093103972A patent/TWI289220B/zh not_active IP Right Cessation
- 2004-02-18 JP JP2006502641A patent/JP2006518548A/ja active Pending
- 2004-02-18 KR KR1020057015317A patent/KR20050107439A/ko not_active Withdrawn
- 2004-02-18 EP EP04712143A patent/EP1595316A4/en not_active Withdrawn
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100864696B1 (ko) * | 2008-03-03 | 2008-10-23 | 국방과학연구소 | 공간적 광 변조 레이저 신호발생장치 |
| KR101053354B1 (ko) * | 2008-10-21 | 2011-08-01 | 김정수 | 외부 공진기를 이용한 파장 변환형 반도체 레이저 |
Also Published As
| Publication number | Publication date |
|---|---|
| EP1595316A4 (en) | 2006-08-23 |
| TW200424729A (en) | 2004-11-16 |
| JP2006518548A (ja) | 2006-08-10 |
| EP1595316A2 (en) | 2005-11-16 |
| WO2004075362A2 (en) | 2004-09-02 |
| WO2004075362A3 (en) | 2005-09-01 |
| CN1778022A (zh) | 2006-05-24 |
| TWI289220B (en) | 2007-11-01 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PA0105 | International application |
Patent event date: 20050819 Patent event code: PA01051R01D Comment text: International Patent Application |
|
| PG1501 | Laying open of application | ||
| PC1203 | Withdrawal of no request for examination | ||
| WITN | Application deemed withdrawn, e.g. because no request for examination was filed or no examination fee was paid |