JP2006500762A - 導電性ポリマーを含有する研磨用組成物 - Google Patents
導電性ポリマーを含有する研磨用組成物 Download PDFInfo
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- JP2006500762A JP2006500762A JP2004522604A JP2004522604A JP2006500762A JP 2006500762 A JP2006500762 A JP 2006500762A JP 2004522604 A JP2004522604 A JP 2004522604A JP 2004522604 A JP2004522604 A JP 2004522604A JP 2006500762 A JP2006500762 A JP 2006500762A
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- polishing system
- polishing
- conductive polymer
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- poly
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- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 17
- 239000000126 substance Substances 0.000 claims description 15
- 230000003647 oxidation Effects 0.000 claims description 12
- 238000007254 oxidation reaction Methods 0.000 claims description 12
- -1 polishing pad Substances 0.000 claims description 10
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 10
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- 229920000767 polyaniline Polymers 0.000 claims description 7
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- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 5
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- 150000003467 sulfuric acid derivatives Chemical class 0.000 description 1
- 235000015523 tannic acid Nutrition 0.000 description 1
- LRBQNJMCXXYXIU-NRMVVENXSA-N tannic acid Chemical compound OC1=C(O)C(O)=CC(C(=O)OC=2C(=C(O)C=C(C=2)C(=O)OC[C@@H]2[C@H]([C@H](OC(=O)C=3C=C(OC(=O)C=4C=C(O)C(O)=C(O)C=4)C(O)=C(O)C=3)[C@@H](OC(=O)C=3C=C(OC(=O)C=4C=C(O)C(O)=C(O)C=4)C(O)=C(O)C=3)[C@@H](OC(=O)C=3C=C(OC(=O)C=4C=C(O)C(O)=C(O)C=4)C(O)=C(O)C=3)O2)OC(=O)C=2C=C(OC(=O)C=3C=C(O)C(O)=C(O)C=3)C(O)=C(O)C=2)O)=C1 LRBQNJMCXXYXIU-NRMVVENXSA-N 0.000 description 1
- 229920002258 tannic acid Polymers 0.000 description 1
- 229940033123 tannic acid Drugs 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 235000002906 tartaric acid Nutrition 0.000 description 1
- 239000011975 tartaric acid Substances 0.000 description 1
- 229940095064 tartrate Drugs 0.000 description 1
- 125000000999 tert-butyl group Chemical group [H]C([H])([H])C(*)(C([H])([H])[H])C([H])([H])[H] 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 238000012876 topography Methods 0.000 description 1
- 229910000314 transition metal oxide Inorganic materials 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- AQLJVWUFPCUVLO-UHFFFAOYSA-N urea hydrogen peroxide Chemical compound OO.NC(N)=O AQLJVWUFPCUVLO-UHFFFAOYSA-N 0.000 description 1
- 125000000391 vinyl group Chemical group [H]C([*])=C([H])[H] 0.000 description 1
- 229920002554 vinyl polymer Polymers 0.000 description 1
- 229910001928 zirconium oxide Inorganic materials 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B33/00—Silicon; Compounds thereof
- C01B33/02—Silicon
- C01B33/021—Preparation
- C01B33/023—Preparation by reduction of silica or free silica-containing material
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01F—COMPOUNDS OF THE METALS BERYLLIUM, MAGNESIUM, ALUMINIUM, CALCIUM, STRONTIUM, BARIUM, RADIUM, THORIUM, OR OF THE RARE-EARTH METALS
- C01F7/00—Compounds of aluminium
- C01F7/02—Aluminium oxide; Aluminium hydroxide; Aluminates
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01G—COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
- C01G17/00—Compounds of germanium
- C01G17/02—Germanium dioxide
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01G—COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
- C01G23/00—Compounds of titanium
- C01G23/04—Oxides; Hydroxides
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01G—COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
- C01G25/00—Compounds of zirconium
- C01G25/02—Oxides
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1454—Abrasive powders, suspensions and pastes for polishing
- C09K3/1463—Aqueous liquid suspensions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/32115—Planarisation
- H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
- H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
- H01L21/32134—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by liquid etching only
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Inorganic Chemistry (AREA)
- Life Sciences & Earth Sciences (AREA)
- Geology (AREA)
- Materials Engineering (AREA)
- Environmental & Geological Engineering (AREA)
- General Life Sciences & Earth Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Polishing Bodies And Polishing Tools (AREA)
- Manufacture Of Macromolecular Shaped Articles (AREA)
Abstract
Description
Claims (21)
- (a)砥粒、研磨パッド、基材の酸化手段、又はそれらの任意の組み合わせ、
(b)導電性ポリマー、及び
(c)液体キャリヤー
を含んで成る研磨系であって、該導電性ポリマーが10-10S/cm〜106S/cmの導電率を有する、研磨系。 - 前記研磨系が、砥粒、研磨パッド、又は砥粒と研磨パッドの両方を含んで成る化学機械研磨系である、請求項1に記載の研磨系。
- 前記導電性ポリマーが、ポリピロール、ポリアニリン、ポリアニリンスルホン酸、ポリチオフェン、ポリ(フェニレン)、ポリ(フェニレン−ビニレン)、ポリ(p−ピリジン)、ポリ(p−ピリジル−ビニレン)、ポリ(1,6−ヘプタジイン)、ポリアセチレン、ポリイソチアナフテン、ポリ−3,4−エチレンジオキシチオフェン、ポリ(N−ビニルカルバゾール)、それらのコポリマー、及びそれらの組み合わせから成る群より選択された、請求項0に記載の研磨系。
- 前記導電性ポリマーが、ポリピロール又はポリアニリンである、請求項3に記載の研磨系。
- 前記導電性ポリマーがドープされていない、請求項0に記載の研磨系。
- 前記導電性ポリマーがドープされている、請求項0に記載の研磨系。
- 前記導電性ポリマーが、n型又はp型のドーパントをドープしている、請求項6に記載の研磨系。
- 前記導電性ポリマーが、Na、K、Li、Ca、有機酸、及びテトラアルキルアンモニウムから成る群より選択されたn型ドーパントをドープしている、請求項7に記載の研磨系。
- 前記導電性ポリマーが、I2、PF6、BF6、Cl及びAsF6から成る群より選択されたp型ドーパントをドープしている、請求項7に記載の研磨系。
- 前記液体キャリヤーが水を含んで成る、請求項0に記載の研磨系。
- 前記研磨系が砥粒を含んで成り、該砥粒が前記液体キャリヤー中に懸濁している、請求項0に記載の研磨系。
- 前記砥粒が、アルミナ、シリカ、セリア、ゲルマニア、チタニア、ジルコニア、マグネシア、窒化ケイ素、炭化ケイ素、ダイヤモンド、及びそれらの組み合わせから成る群より選択された、請求項11に記載の研磨系。
- 前記研磨系が砥粒と研磨パッドを含んで成り、該砥粒が該研磨パッド上に固定された、請求項0に記載の研磨系。
- 前記導電性ポリマーが、前記液体キャリヤーとその中に懸濁している全ての成分の重量に基づいて、0.01wt%〜5wt%の量で存在している、請求項0に記載の研磨系。
- 前記砥粒が、前記液体キャリヤーとその中に懸濁している全ての成分の重量に基づいて、0.1wt%〜20wt%の量で存在している、請求項0に記載の研磨系。
- 前記研磨系が9以下のpHを有する、請求項0に記載の研磨系。
- 前記研磨系が基材の酸化手段をさらに含んで成る、請求項0に記載の研磨系。
- 前記基材の酸化手段が酸化剤である、請求項17に記載の研磨系。
- 前記研磨系が錯化剤をさらに含んで成る、請求項0に記載の研磨系。
- 前記研磨系が、基材の酸化手段を含んで成る電気化学研磨系である、請求項1に記載の研磨系。
- 前記基材の酸化手段が、時間変化陽極電位を基材に印加するための装置を含んで成る、請求項20に記載の研磨系。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/199,704 | 2002-07-19 | ||
US10/199,704 US6811474B2 (en) | 2002-07-19 | 2002-07-19 | Polishing composition containing conducting polymer |
PCT/IB2003/002880 WO2004009719A1 (en) | 2002-07-19 | 2003-06-25 | Polishing composition containing conducting polymer |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2006500762A true JP2006500762A (ja) | 2006-01-05 |
JP4791037B2 JP4791037B2 (ja) | 2011-10-12 |
Family
ID=30443383
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2004522604A Expired - Fee Related JP4791037B2 (ja) | 2002-07-19 | 2003-06-25 | 導電性ポリマーを含有する研磨用組成物 |
Country Status (10)
Country | Link |
---|---|
US (1) | US6811474B2 (ja) |
EP (1) | EP1556455B1 (ja) |
JP (1) | JP4791037B2 (ja) |
KR (1) | KR100987895B1 (ja) |
CN (1) | CN1292034C (ja) |
AT (1) | ATE353944T1 (ja) |
AU (1) | AU2003242942A1 (ja) |
DE (1) | DE60311855T2 (ja) |
TW (1) | TWI233856B (ja) |
WO (1) | WO2004009719A1 (ja) |
Cited By (1)
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JP2009131944A (ja) * | 2007-11-30 | 2009-06-18 | Mitsubishi Rayon Co Ltd | 導電性研磨パッドおよびその製造方法 |
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US6884144B2 (en) * | 2002-08-16 | 2005-04-26 | Micron Technology, Inc. | Methods and systems for planarizing microelectronic devices with Ge-Se-Ag layers |
US7838482B2 (en) * | 2003-01-31 | 2010-11-23 | Hitachi Chemical Co. Ltd. | CMP polishing compound and polishing method |
US6916742B2 (en) * | 2003-02-27 | 2005-07-12 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Modular barrier removal polishing slurry |
IL154783A0 (en) * | 2003-03-06 | 2003-10-31 | J G Systems Inc | Chemical-mechanical polishing composition based on cupric oxidizing compounds |
JP4801326B2 (ja) * | 2004-05-06 | 2011-10-26 | 三井化学株式会社 | 研磨用スラリー |
US20070037491A1 (en) * | 2005-08-12 | 2007-02-15 | Yuzhuo Li | Chemically modified chemical mechanical polishing pad, process of making a modified chemical mechanical polishing pad and method of chemical mechanical polishing |
US7998866B2 (en) * | 2006-09-05 | 2011-08-16 | Cabot Microelectronics Corporation | Silicon carbide polishing method utilizing water-soluble oxidizers |
US7678700B2 (en) * | 2006-09-05 | 2010-03-16 | Cabot Microelectronics Corporation | Silicon carbide polishing method utilizing water-soluble oxidizers |
EP2182894B1 (en) | 2007-07-27 | 2017-03-15 | R Tree Innovations, LLC | Inter-body implantation system |
KR101428052B1 (ko) * | 2007-12-13 | 2014-08-08 | 엘지이노텍 주식회사 | 반도체 발광소자 및 그 제조방법 |
KR20100004181A (ko) * | 2008-07-03 | 2010-01-13 | 삼성전자주식회사 | 화학 기계적 연마용 슬러리 조성물, 이의 제조 방법 및화학 기계적 연마방법 |
JP5643305B2 (ja) | 2009-07-09 | 2014-12-17 | アール ツリー イノベーションズ エルエルシー | 可撓性を有する椎体間装置 |
CN102967632B (zh) * | 2012-11-30 | 2016-01-20 | 淄博包钢灵芝稀土高科技股份有限公司 | 用电导率指导抛光粉生产和产品质量控制的方法 |
CN105448817B (zh) * | 2014-09-29 | 2020-05-19 | 盛美半导体设备(上海)股份有限公司 | 一种电化学抛光金属互连晶圆结构的方法 |
CN104278061A (zh) * | 2014-10-01 | 2015-01-14 | 青岛科技大学 | 一种生产氟苯基甲基丙酸甲酯的产朊酵母还原法 |
CN104650740B (zh) * | 2014-12-10 | 2017-07-14 | 深圳市力合材料有限公司 | 一种可实现快速稳定抛光的抛光液 |
US10294399B2 (en) * | 2017-01-05 | 2019-05-21 | Cabot Microelectronics Corporation | Composition and method for polishing silicon carbide |
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2002
- 2002-07-19 US US10/199,704 patent/US6811474B2/en not_active Expired - Lifetime
-
2003
- 2003-06-25 AT AT03765233T patent/ATE353944T1/de not_active IP Right Cessation
- 2003-06-25 WO PCT/IB2003/002880 patent/WO2004009719A1/en active IP Right Grant
- 2003-06-25 EP EP03765233A patent/EP1556455B1/en not_active Expired - Lifetime
- 2003-06-25 CN CNB038171686A patent/CN1292034C/zh not_active Expired - Fee Related
- 2003-06-25 AU AU2003242942A patent/AU2003242942A1/en not_active Abandoned
- 2003-06-25 KR KR1020057000935A patent/KR100987895B1/ko not_active IP Right Cessation
- 2003-06-25 JP JP2004522604A patent/JP4791037B2/ja not_active Expired - Fee Related
- 2003-06-25 DE DE60311855T patent/DE60311855T2/de not_active Expired - Lifetime
- 2003-07-14 TW TW092119139A patent/TWI233856B/zh not_active IP Right Cessation
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JP2009131944A (ja) * | 2007-11-30 | 2009-06-18 | Mitsubishi Rayon Co Ltd | 導電性研磨パッドおよびその製造方法 |
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CN1668714A (zh) | 2005-09-14 |
TW200408495A (en) | 2004-06-01 |
AU2003242942A1 (en) | 2004-02-09 |
KR20050026489A (ko) | 2005-03-15 |
US6811474B2 (en) | 2004-11-02 |
DE60311855T2 (de) | 2007-11-22 |
US20040014400A1 (en) | 2004-01-22 |
EP1556455B1 (en) | 2007-02-14 |
JP4791037B2 (ja) | 2011-10-12 |
WO2004009719A1 (en) | 2004-01-29 |
DE60311855D1 (de) | 2007-03-29 |
CN1292034C (zh) | 2006-12-27 |
TWI233856B (en) | 2005-06-11 |
ATE353944T1 (de) | 2007-03-15 |
KR100987895B1 (ko) | 2010-10-13 |
EP1556455A1 (en) | 2005-07-27 |
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