DE60311855D1 - Poliermittel mit leitfähigem polymer - Google Patents

Poliermittel mit leitfähigem polymer

Info

Publication number
DE60311855D1
DE60311855D1 DE60311855T DE60311855T DE60311855D1 DE 60311855 D1 DE60311855 D1 DE 60311855D1 DE 60311855 T DE60311855 T DE 60311855T DE 60311855 T DE60311855 T DE 60311855T DE 60311855 D1 DE60311855 D1 DE 60311855D1
Authority
DE
Germany
Prior art keywords
conductive polymer
polishing agent
polishing
abrasive
oxidizing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60311855T
Other languages
English (en)
Other versions
DE60311855T2 (de
Inventor
K Cherian
Jiang Zhang
F Sun
Shumin Wang
Eric H Klingenberg
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
CMC Materials Inc
Original Assignee
Cabot Microelectronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Cabot Microelectronics Corp filed Critical Cabot Microelectronics Corp
Publication of DE60311855D1 publication Critical patent/DE60311855D1/de
Application granted granted Critical
Publication of DE60311855T2 publication Critical patent/DE60311855T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/02—Silicon
    • C01B33/021—Preparation
    • C01B33/023—Preparation by reduction of silica or free silica-containing material
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01F—COMPOUNDS OF THE METALS BERYLLIUM, MAGNESIUM, ALUMINIUM, CALCIUM, STRONTIUM, BARIUM, RADIUM, THORIUM, OR OF THE RARE-EARTH METALS
    • C01F7/00—Compounds of aluminium
    • C01F7/02—Aluminium oxide; Aluminium hydroxide; Aluminates
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01G—COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
    • C01G17/00—Compounds of germanium
    • C01G17/02—Germanium dioxide
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01G—COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
    • C01G23/00—Compounds of titanium
    • C01G23/04—Oxides; Hydroxides
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01G—COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
    • C01G25/00—Compounds of zirconium
    • C01G25/02—Oxides
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463—Aqueous liquid suspensions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/32115—Planarisation
    • H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
    • H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
    • H01L21/32134—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by liquid etching only

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Inorganic Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Geology (AREA)
  • Materials Engineering (AREA)
  • Environmental & Geological Engineering (AREA)
  • General Life Sciences & Earth Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Polishing Bodies And Polishing Tools (AREA)
  • Manufacture Of Macromolecular Shaped Articles (AREA)
DE60311855T 2002-07-19 2003-06-25 Poliermittel mit leitfähigem polymer Expired - Lifetime DE60311855T2 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US10/199,704 US6811474B2 (en) 2002-07-19 2002-07-19 Polishing composition containing conducting polymer
US199704 2002-07-19
PCT/IB2003/002880 WO2004009719A1 (en) 2002-07-19 2003-06-25 Polishing composition containing conducting polymer

Publications (2)

Publication Number Publication Date
DE60311855D1 true DE60311855D1 (de) 2007-03-29
DE60311855T2 DE60311855T2 (de) 2007-11-22

Family

ID=30443383

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60311855T Expired - Lifetime DE60311855T2 (de) 2002-07-19 2003-06-25 Poliermittel mit leitfähigem polymer

Country Status (10)

Country Link
US (1) US6811474B2 (de)
EP (1) EP1556455B1 (de)
JP (1) JP4791037B2 (de)
KR (1) KR100987895B1 (de)
CN (1) CN1292034C (de)
AT (1) ATE353944T1 (de)
AU (1) AU2003242942A1 (de)
DE (1) DE60311855T2 (de)
TW (1) TWI233856B (de)
WO (1) WO2004009719A1 (de)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6884144B2 (en) * 2002-08-16 2005-04-26 Micron Technology, Inc. Methods and systems for planarizing microelectronic devices with Ge-Se-Ag layers
US7838482B2 (en) * 2003-01-31 2010-11-23 Hitachi Chemical Co. Ltd. CMP polishing compound and polishing method
US6916742B2 (en) * 2003-02-27 2005-07-12 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Modular barrier removal polishing slurry
IL154783A0 (en) * 2003-03-06 2003-10-31 J G Systems Inc Chemical-mechanical polishing composition based on cupric oxidizing compounds
JP4801326B2 (ja) * 2004-05-06 2011-10-26 三井化学株式会社 研磨用スラリー
US20070037491A1 (en) * 2005-08-12 2007-02-15 Yuzhuo Li Chemically modified chemical mechanical polishing pad, process of making a modified chemical mechanical polishing pad and method of chemical mechanical polishing
US7998866B2 (en) * 2006-09-05 2011-08-16 Cabot Microelectronics Corporation Silicon carbide polishing method utilizing water-soluble oxidizers
US7678700B2 (en) * 2006-09-05 2010-03-16 Cabot Microelectronics Corporation Silicon carbide polishing method utilizing water-soluble oxidizers
CA2694734A1 (en) 2007-07-27 2009-02-05 R Tree Innovations, Llc Inter-body implantation system and method
JP5436770B2 (ja) * 2007-11-30 2014-03-05 三菱レイヨン株式会社 導電性研磨パッドおよびその製造方法
KR101428052B1 (ko) * 2007-12-13 2014-08-08 엘지이노텍 주식회사 반도체 발광소자 및 그 제조방법
KR20100004181A (ko) * 2008-07-03 2010-01-13 삼성전자주식회사 화학 기계적 연마용 슬러리 조성물, 이의 제조 방법 및화학 기계적 연마방법
US9814599B2 (en) 2009-07-09 2017-11-14 R Tree Innovations, Llc Inter-body implantation system and method
CN102967632B (zh) * 2012-11-30 2016-01-20 淄博包钢灵芝稀土高科技股份有限公司 用电导率指导抛光粉生产和产品质量控制的方法
CN105448817B (zh) * 2014-09-29 2020-05-19 盛美半导体设备(上海)股份有限公司 一种电化学抛光金属互连晶圆结构的方法
CN104278061A (zh) * 2014-10-01 2015-01-14 青岛科技大学 一种生产氟苯基甲基丙酸甲酯的产朊酵母还原法
CN104650740B (zh) * 2014-12-10 2017-07-14 深圳市力合材料有限公司 一种可实现快速稳定抛光的抛光液
US10294399B2 (en) * 2017-01-05 2019-05-21 Cabot Microelectronics Corporation Composition and method for polishing silicon carbide

Family Cites Families (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0322721B1 (de) 1987-12-29 1993-10-06 E.I. Du Pont De Nemours And Company Feine Polierzusammensetzung für Plaketten
US5352277A (en) 1988-12-12 1994-10-04 E. I. Du Pont De Nemours & Company Final polishing composition
US5264010A (en) 1992-04-27 1993-11-23 Rodel, Inc. Compositions and methods for polishing and planarizing surfaces
US5489233A (en) 1994-04-08 1996-02-06 Rodel, Inc. Polishing pads and methods for their use
US5527423A (en) 1994-10-06 1996-06-18 Cabot Corporation Chemical mechanical polishing slurry for metal layers
MY113454A (en) 1995-06-01 2002-02-28 Rodel Inc Compositions for polishing silicon wafers and methods
US5860848A (en) 1995-06-01 1999-01-19 Rodel, Inc. Polishing silicon wafers with improved polishing slurries
WO1996038262A1 (en) * 1995-06-01 1996-12-05 Rodel, Inc. Compositions for polishing silicon wafers and methods
US5958794A (en) 1995-09-22 1999-09-28 Minnesota Mining And Manufacturing Company Method of modifying an exposed surface of a semiconductor wafer
US6126532A (en) 1997-04-18 2000-10-03 Cabot Corporation Polishing pads for a semiconductor substrate
WO1998047662A1 (en) 1997-04-18 1998-10-29 Cabot Corporation Polishing pad for a semiconductor substrate
JPH11162910A (ja) 1997-11-25 1999-06-18 Sumitomo Chem Co Ltd 半導体装置製造用研磨剤及び研磨方法
US6117000A (en) 1998-07-10 2000-09-12 Cabot Corporation Polishing pad for a semiconductor substrate
KR100447551B1 (ko) * 1999-01-18 2004-09-08 가부시끼가이샤 도시바 복합 입자 및 그의 제조 방법, 수계 분산체, 화학 기계연마용 수계 분산체 조성물 및 반도체 장치의 제조 방법
US6468785B1 (en) * 1999-02-19 2002-10-22 New Mexico State University Technology Transfer Corporation Doped conducting polymers applications and methods
WO2000079577A1 (fr) * 1999-06-18 2000-12-28 Hitachi Chemical Co., Ltd. Compose abrasif pour polissage cmp, procede de polissage d'un substrat, procede de fabrication d'un dispositif a semiconducteur utilisant ledit compose, et additif pour compose abrasif cmp
TW499471B (en) 1999-09-01 2002-08-21 Eternal Chemical Co Ltd Chemical mechanical/abrasive composition for semiconductor processing
US6348076B1 (en) 1999-10-08 2002-02-19 International Business Machines Corporation Slurry for mechanical polishing (CMP) of metals and use thereof
US6379223B1 (en) 1999-11-29 2002-04-30 Applied Materials, Inc. Method and apparatus for electrochemical-mechanical planarization
JP3910785B2 (ja) * 2000-06-30 2007-04-25 株式会社東芝 化学機械研磨用スラリーおよび半導体装置の製造方法
JP4972829B2 (ja) * 2001-06-28 2012-07-11 日立化成工業株式会社 Ｃｍｐ研磨剤及び基板の研磨方法

Also Published As

Publication number Publication date
WO2004009719A1 (en) 2004-01-29
KR100987895B1 (ko) 2010-10-13
TWI233856B (en) 2005-06-11
CN1292034C (zh) 2006-12-27
CN1668714A (zh) 2005-09-14
EP1556455A1 (de) 2005-07-27
TW200408495A (en) 2004-06-01
ATE353944T1 (de) 2007-03-15
JP4791037B2 (ja) 2011-10-12
EP1556455B1 (de) 2007-02-14
US20040014400A1 (en) 2004-01-22
AU2003242942A1 (en) 2004-02-09
DE60311855T2 (de) 2007-11-22
KR20050026489A (ko) 2005-03-15
JP2006500762A (ja) 2006-01-05
US6811474B2 (en) 2004-11-02

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Legal Events

Date Code Title Description
8381 Inventor (new situation)

Inventor name: CHERIAN, ISAAC K., AURORA, IL, US

Inventor name: ZHANG, JIANG, AURORA, IL, US

Inventor name: SUN, FRED F., AURORA, IL, US

Inventor name: WANG, SHUMIN, AURORA, IL, US

Inventor name: KLINGENBERG, ERIC H., AURORA, IL, US

8364 No opposition during term of opposition