JP2006332637A5 - - Google Patents
Download PDFInfo
- Publication number
- JP2006332637A5 JP2006332637A5 JP2006124772A JP2006124772A JP2006332637A5 JP 2006332637 A5 JP2006332637 A5 JP 2006332637A5 JP 2006124772 A JP2006124772 A JP 2006124772A JP 2006124772 A JP2006124772 A JP 2006124772A JP 2006332637 A5 JP2006332637 A5 JP 2006332637A5
- Authority
- JP
- Japan
- Prior art keywords
- laser beam
- divided
- laser
- split
- beams
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 claims 20
- 230000003287 optical effect Effects 0.000 claims 9
- 238000004519 manufacturing process Methods 0.000 claims 8
- 230000001678 irradiating effect Effects 0.000 claims 6
- 238000000034 method Methods 0.000 claims 6
- 230000010355 oscillation Effects 0.000 claims 4
- 230000003111 delayed effect Effects 0.000 claims 3
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 claims 1
- 230000001427 coherent effect Effects 0.000 claims 1
- 239000013078 crystal Substances 0.000 claims 1
- 239000011521 glass Substances 0.000 claims 1
- 239000010453 quartz Substances 0.000 claims 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims 1
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2006124772A JP5089077B2 (ja) | 2005-04-28 | 2006-04-28 | 半導体装置の作製方法 |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2005133731 | 2005-04-28 | ||
| JP2005133731 | 2005-04-28 | ||
| JP2006124772A JP5089077B2 (ja) | 2005-04-28 | 2006-04-28 | 半導体装置の作製方法 |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2012104458A Division JP5894002B2 (ja) | 2005-04-28 | 2012-05-01 | レーザ照射装置 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2006332637A JP2006332637A (ja) | 2006-12-07 |
| JP2006332637A5 true JP2006332637A5 (enrdf_load_stackoverflow) | 2009-06-18 |
| JP5089077B2 JP5089077B2 (ja) | 2012-12-05 |
Family
ID=37553949
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2006124772A Expired - Fee Related JP5089077B2 (ja) | 2005-04-28 | 2006-04-28 | 半導体装置の作製方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP5089077B2 (enrdf_load_stackoverflow) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100864883B1 (ko) * | 2006-12-28 | 2008-10-22 | 삼성에스디아이 주식회사 | 박막트랜지스터, 그의 제조방법 및 이를 구비한유기전계발광표시장치. |
| JP4908269B2 (ja) * | 2007-03-07 | 2012-04-04 | 富士フイルム株式会社 | レーザ光照方法および装置 |
| WO2011065992A1 (en) * | 2009-11-24 | 2011-06-03 | The Trustees Of Columbia University In The City Of New York | Systems and methods for non-periodic pulse sequential lateral solidification |
| JP5454911B2 (ja) * | 2010-03-25 | 2014-03-26 | 株式会社日本製鋼所 | アニール処理体の製造方法およびレーザアニール装置 |
| JPWO2014136614A1 (ja) * | 2013-03-05 | 2017-02-09 | 国立大学法人名古屋大学 | 半導体薄膜の形成方法 |
| CN104143533B (zh) * | 2014-08-07 | 2017-06-27 | 深圳市华星光电技术有限公司 | 高解析度amoled背板制造方法 |
| DE102019118676B4 (de) | 2019-07-10 | 2021-10-21 | Innovavent Gmbh | Optisches System zur Homogenisierung der Intensität von Lichtstrahlung und Anlage zur Bearbeitung einer Halbleitermaterialschicht |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002270510A (ja) * | 2000-12-26 | 2002-09-20 | Semiconductor Energy Lab Co Ltd | 半導体装置の作製方法 |
| JP2003109912A (ja) * | 2001-10-01 | 2003-04-11 | Matsushita Electric Ind Co Ltd | レーザアニール装置 |
| JP3563065B2 (ja) * | 2002-03-28 | 2004-09-08 | 三菱電機株式会社 | レーザビーム均一照射光学系 |
| JP4503344B2 (ja) * | 2003-04-21 | 2010-07-14 | 株式会社半導体エネルギー研究所 | ビーム照射装置および半導体装置の作製方法 |
-
2006
- 2006-04-28 JP JP2006124772A patent/JP5089077B2/ja not_active Expired - Fee Related
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP2006332637A5 (enrdf_load_stackoverflow) | ||
| JP6224074B2 (ja) | レーザナノ加工装置および方法 | |
| RU2689018C2 (ru) | Устройство для проецирования маски пучком фемтосекундного и пикосекундного лазера, содержащее ограничитель, маску и системы линз | |
| US10074565B2 (en) | Method of laser processing for substrate cleaving or dicing through forming “spike-like” shaped damage structures | |
| JP6512612B2 (ja) | レーザ微細加工方法および装置 | |
| JP5452247B2 (ja) | レーザダイシング装置 | |
| JP5133158B2 (ja) | 多重ビームレーザー装置 | |
| CN103038862B (zh) | 激光退火方法及其装置 | |
| JP2012187618A (ja) | ガラス基板のレーザ加工装置 | |
| TW200713424A (en) | High throughput crystallization of thin films | |
| JP2006248885A (ja) | 超短パルスレーザによる石英の切断方法 | |
| JP2016166120A (ja) | 積層基板の加工方法及びレーザ光による積層基板の加工装置 | |
| WO2007143144A3 (en) | Device and method to create a low divergence, high power laser beam for material processing applications | |
| JP2010536576A (ja) | 短パルスレーザを用いた固体材料切断方法およびシステム | |
| JP2011091322A (ja) | レーザダイシング方法およびレーザダイシング装置 | |
| JP2022110082A5 (enrdf_load_stackoverflow) | ||
| JP2005072183A5 (enrdf_load_stackoverflow) | ||
| KR20230020545A (ko) | 투명 작업편의 고각 레이저 처리를 위한 위상-변형 준-비-회절 레이저 빔 | |
| CN102348529A (zh) | 最小化在使用激光器的材料移除期间的热效应 | |
| JP2002096187A (ja) | レーザ加工装置及び加工方法 | |
| JP2008147643A5 (enrdf_load_stackoverflow) | ||
| KR100900685B1 (ko) | 다중 빔 레이저 장치 및 빔 스플리터 | |
| KR100636852B1 (ko) | 모드라킹된 자외선 레이저를 이용한 유리기판의 스크라이빙방법 및 절단 방법 | |
| JP5923765B2 (ja) | ガラス基板のレーザ加工装置 | |
| KR100862449B1 (ko) | 다중 빔 레이저 장치 |