JP2006332605A - Wiring board - Google Patents

Wiring board Download PDF

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JP2006332605A
JP2006332605A JP2006104890A JP2006104890A JP2006332605A JP 2006332605 A JP2006332605 A JP 2006332605A JP 2006104890 A JP2006104890 A JP 2006104890A JP 2006104890 A JP2006104890 A JP 2006104890A JP 2006332605 A JP2006332605 A JP 2006332605A
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cavity
insulating
metal layer
wiring board
substrate body
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JP4309897B2 (en
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Makoto Nagai
誠 永井
Masahito Morita
雅仁 森田
Hisashi Wakako
久 若子
Atsushi Uchida
敦士 内田
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Niterra Co Ltd
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NGK Spark Plug Co Ltd
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Abstract

<P>PROBLEM TO BE SOLVED: To provide a wiring board in which a light emitting element is mounted on the bottom face of a cavity, sealing resin filling that cavity is held not to be exfoliated easily, and light from the light emitting element can be reflected efficiently. <P>SOLUTION: The wiring board comprises a substrate body 2 composed of ceramic (insulating material) and having a surface 3 and a rear surface 4, a cavity 5 having an opening in the surface 3 of the substrate body 2 and having a protrusion 8 protruding toward the central side of the opening on the side of the circular bottom face 6, the substantially conical side face 7 and the surface 3 of the side face 7, a metal layer 11 formed on the side face 7 of the cavity 5, and an insulating portion 10 formed on the rear surface 4 side of the protrusion 8 while having a curved surface 10a recessed to make an obtuse angle θ against the metal layer 11. <P>COPYRIGHT: (C)2007,JPO&INPIT

Description

本発明は、キャビティの底面に発光素子を実装する配線基板に関する。   The present invention relates to a wiring board on which a light emitting element is mounted on a bottom surface of a cavity.

発光素子を実装する配線基板においては、かかる発光素子を実装するキャビティの側面に金属からなる光反射層を形成すると共に、当該キャビティ内に封止用樹脂を表面が平坦になるようにして充填することで、上記発光素子から発光された光を鮮明なものとすることができる。
例えば、平板状のセラミック基体の上に、貫通穴を有するセラミック枠体を接合し、かかる貫通穴の内面に、WやMoなどの高融点金属を含む金属層およびCoを含む金属メッキ層を順次被着した発光素子収納用パッケージが提案されている(例えば、特許文献1参照)。
一方、パッケージの開口部(キャビティ)内に光電素子を配置し、かかる開口部に充填したモールド樹脂が剥離しないように保持する保持手段を上記開口部の側面に有する光電装置も提案されている(例えば、特許文献2参照)。
In a wiring board on which a light emitting element is mounted, a light reflecting layer made of metal is formed on a side surface of a cavity in which the light emitting element is mounted, and a sealing resin is filled in the cavity so that the surface is flat. Thus, the light emitted from the light emitting element can be made clear.
For example, a ceramic frame body having a through hole is joined on a flat ceramic base, and a metal layer containing a refractory metal such as W or Mo and a metal plating layer containing Co are sequentially formed on the inner surface of the through hole. An attached light emitting element storage package has been proposed (see, for example, Patent Document 1).
On the other hand, there has also been proposed a photoelectric device in which a photoelectric element is arranged in an opening (cavity) of a package and a holding means for holding the mold resin filled in the opening so as not to peel off is provided on a side surface of the opening ( For example, see Patent Document 2).

特開2004−228549号公報(第1〜9頁、図1,4)JP 2004-228549 A (pages 1 to 9, FIGS. 1 and 4) 特開平11−74561号公報(第1〜8頁、図1〜5)Japanese Patent Laid-Open No. 11-74561 (Pages 1-8, FIGS. 1-5)

ところで、発光素子を実装するキャビティの側面に設けられた金属層に被覆する光反射層のうち、最表層に位置するAgなどの金属メッキ層は、例えば、キャビティの側面における上端部では、かかる側面の中間位置よりも、当該Agメッキ層の厚みが薄くなる。
しかも、前記特許文献2の光電装置のように、発光素子を配置するキャビティの側面に、モールド樹脂を保持するための突出した断面形状の保持手段を設けると、かかるキャビティの側面に設けられた金属層上にNi、Au、Agメッキ層などを電解メッキする際に、上記保持手段の直下ではメッキ液が環流しにくくなる。この結果、上記保持手段の直下に位置する金属層の上端部に被覆される金属メッキ層、特に最上層のAgメッキ層の厚みが薄くなり、下地の金属層や金属メッキ層の成分がAgメッキ層の表面に析出し、上記上端部以外にも変色が広がり易くなる。このため、発光素子からの光を効率良く反射することが一層困難になる、という問題点があった。
By the way, among the light reflection layers covering the metal layer provided on the side surface of the cavity where the light emitting element is mounted, the metal plating layer such as Ag positioned on the outermost layer is, for example, the side surface at the upper end portion on the side surface of the cavity. The thickness of the Ag plating layer is thinner than the intermediate position.
In addition, as in the photoelectric device of Patent Document 2, when a holding means having a protruding cross-sectional shape for holding the mold resin is provided on the side surface of the cavity in which the light emitting element is disposed, the metal provided on the side surface of the cavity is provided. When electrolytically plating a Ni, Au, Ag plating layer or the like on the layer, the plating solution is less likely to circulate immediately below the holding means. As a result, the thickness of the metal plating layer coated on the upper end portion of the metal layer located immediately below the holding means, particularly the uppermost Ag plating layer, is reduced, and the underlying metal layer and the components of the metal plating layer are Ag plated. Precipitation occurs on the surface of the layer, and discoloration is likely to spread beyond the upper end. For this reason, there is a problem that it becomes more difficult to efficiently reflect light from the light emitting element.

本発明は、背景技術において説明した問題点を解決し、キャビティの底面に発光素子が実装され、且つ当該キャビティに充填される封止用樹脂が剥離しにくく保持されると共に、上記発光素子からの光を効率良く反射できる配線基板を提供する、ことを課題とする。   The present invention solves the problems described in the background art, the light emitting element is mounted on the bottom surface of the cavity, and the sealing resin filled in the cavity is held difficult to peel off. It is an object to provide a wiring board capable of efficiently reflecting light.

課題を解決するための手段および発明の効果Means for Solving the Problems and Effects of the Invention

本発明は、前記課題を解決するため、キャビティの開口部に封止用樹脂を保持する凸部などを配設すると共に、メッキ液の環流不足に起因する金属メッキ層の変色を確実に防止する、ことに着想して成されたものである。
即ち、本発明における第1の配線基板(請求項1)は、絶縁材からなり、且つ表面および裏面を有する基板本体と、かかる基板本体の表面に開口部を有し、底面、側面、およびかかる側面の上記表面側において上記開口部に向かって突出する凸部を有するキャビティと、上記側面に形成した金属層と、前記凸部の裏面側において、上記金属層との間で鈍角を成す絶縁部と、を備える、ことを特徴とする。
In order to solve the above-mentioned problems, the present invention is provided with a convex portion for holding a sealing resin in the opening of the cavity and reliably prevents discoloration of the metal plating layer due to insufficient circulation of the plating solution. , It was conceived.
That is, the first wiring board according to the present invention (Claim 1) is made of an insulating material and has a substrate body having a front surface and a back surface, an opening on the surface of the substrate body, a bottom surface, a side surface, and the like. A cavity having a convex portion protruding toward the opening on the front surface side of the side surface, a metal layer formed on the side surface, and an insulating portion forming an obtuse angle with the metal layer on the back surface side of the convex portion And comprising.

これによれば、前記凸部の裏面側には、キャビティの側面に形成した金属層との間で鈍角を成すように絶縁部が形成されているため、上記キャビティの側面に電解メッキにより、金属メッキ層を形成する際に、メッキ液の環流が十分に確保できる。この結果、金属層の上端部側に形成される形成される金属メッキ層の厚みと金属層の中心部に形成される金属メッキ層の厚みとがほぼ同じとなる。これにより、金属層の上端部側においても、下地の金属メッキ層を形成するNiなどの金属が最上層の金属メッキ層である例えばAgメッキ層などの表面に析出しにくくなるため、上端部側において最上層のAgメッキ層の変色が広がることを防止できる。しかも、前記凸部は、キャビティの開口部において当該開口部の中央側に向かって突出しているため、上記キャビティ内に充填される封止用樹脂を、当該キャビティから剥離不能して保持することも可能となる。従って、長期にわたり、キャビティの底面に実装する発光素子からの光を効率良く外部に放射することが可能となる。   According to this, since the insulating portion is formed on the back surface side of the convex portion so as to form an obtuse angle with the metal layer formed on the side surface of the cavity, the metal is formed on the side surface of the cavity by electrolytic plating. When forming the plating layer, a sufficient circulation of the plating solution can be secured. As a result, the thickness of the metal plating layer formed on the upper end side of the metal layer is substantially the same as the thickness of the metal plating layer formed at the center of the metal layer. As a result, even on the upper end side of the metal layer, the metal such as Ni that forms the underlying metal plating layer is less likely to be deposited on the surface of the uppermost metal plating layer such as an Ag plating layer. Can prevent the discoloration of the uppermost Ag plating layer from spreading. In addition, since the convex portion protrudes toward the center of the opening at the opening of the cavity, the sealing resin filled in the cavity can be held without being peeled from the cavity. It becomes possible. Therefore, it is possible to efficiently radiate light from the light emitting element mounted on the bottom surface of the cavity to the outside over a long period of time.

尚、前記基板本体を形成する絶縁材には、例えばアルミナを主成分とするセラミック、低温焼成の一種である例えばガラス−セラミック、あるいは、例えばエポキシ系樹脂などが含まれる。
また、前記キャビティは、開口部側に対し底面側が縮径されたほぼ円錐形状、ほぼ楕円錐形状、ほぼ長円錐形状、四角錐以上の多角錐形状のほか、全体が円柱形、楕円柱形、長円柱形、あるいは四角柱を含む多角柱形状の形態も含まれる。
更に、前記凸部は、キャビティの開口部に沿った全周に位置する形態のほか、キャビティの開口部における複数の箇所に互いに離れて位置する形態も含まれる。
また、前記金属層は、絶縁材がセラミックまたはガラス−セラミックの場合、W、Mo、Cu、Agなどが用いられ、絶縁材が樹脂の場合、Cuなどが用いられる。かかる金属層の上に形成される金属メッキ層は、下地のNiメッキ層などや中層のAuメッキ層と、その上に形成されるAg、Pt、Rh、またはPdの反射用メッキ層とから構成される。
更に、前記鈍角は、90度よりも大きく且つ140度以下が望ましい。
加えて、前記発光素子には、発光ダイオード(LED)や半導体レーザ(LD)などが含まれる。
The insulating material forming the substrate body includes, for example, a ceramic mainly composed of alumina, glass-ceramic, which is a kind of low-temperature firing, or epoxy resin, for example.
In addition, the cavity has a substantially conical shape whose diameter is reduced on the bottom side with respect to the opening side, a substantially elliptical cone shape, a substantially long cone shape, a polygonal pyramid shape of a quadrangular pyramid or more, and an overall cylindrical shape, elliptical prism shape, A long cylindrical shape or a polygonal column shape including a square column is also included.
Furthermore, the said convex part includes the form located apart from each other in a plurality of locations in the opening part of the cavity, in addition to the form located on the entire circumference along the opening part of the cavity.
The metal layer is made of W, Mo, Cu, Ag or the like when the insulating material is ceramic or glass-ceramic, and Cu or the like when the insulating material is resin. The metal plating layer formed on such a metal layer is composed of an underlying Ni plating layer or the like, an intermediate Au plating layer, and an Ag, Pt, Rh, or Pd reflection plating layer formed thereon. Is done.
Furthermore, the obtuse angle is desirably greater than 90 degrees and 140 degrees or less.
In addition, the light emitting element includes a light emitting diode (LED), a semiconductor laser (LD), and the like.

一方、本発明における第2の配線基板(請求項2)は、絶縁材からなり、且つ表面および裏面を有する基板本体と、かかる基板本体の表面に開口部を有し、底面、側面、およびかかる側面において上記開口部の中央側に向かって突出する凸部を有するキャビティと、上記側面に形成した金属層と、かかる金属層の少なくとも上端部を覆う絶縁部と、を備える、ことを特徴とする。   On the other hand, the second wiring board according to the present invention (Claim 2) is made of an insulating material and has a substrate body having a front surface and a back surface, an opening on the surface of the substrate body, a bottom surface, a side surface, and A cavity having a convex portion projecting toward the center of the opening on the side surface, a metal layer formed on the side surface, and an insulating portion covering at least the upper end of the metal layer are provided. .

これによれば、前記絶縁部がキャビティの側面に形成された金属層の少なくとも上端部を覆っているため、凸部の直下におけるメッキ液が環流しにくい部分には、金属メッキが形成されない。換言すれば、金属層のうち、メッキ液の環流が十分に確保される部分のみが絶縁部から露出しているので、かかる金属層の上に金属メッキ層をほぼ均一な厚みで形成することができる。このため、下地の金属メッキ層を形成するNiなどの金属が、最上層の金属メッキ層である例えばAgメッキ層などの表面に析出し易い部分をなくすことで、最上層のAgメッキ層などに変色が広がることを防止できる。しかも、前記凸部は、キャビティの開口部において当該開口部の中央側に向かって突出しているため、上記キャビティ内に充填される封止用樹脂を、当該キャビティから剥離不能して保持することも可能となる。従って、長期にわたり、キャビティの底面に実装する発光素子からの光を効率良く外部に放射することが可能となる。   According to this, since the insulating portion covers at least the upper end portion of the metal layer formed on the side surface of the cavity, the metal plating is not formed in the portion where the plating solution just under the convex portion is difficult to circulate. In other words, since only the portion of the metal layer where the circulation of the plating solution is sufficiently secured is exposed from the insulating portion, the metal plating layer can be formed on the metal layer with a substantially uniform thickness. it can. For this reason, by removing the portion where the metal such as Ni that forms the underlying metal plating layer is likely to precipitate on the surface of the uppermost metal plating layer such as the Ag plating layer, the uppermost Ag plating layer or the like can be obtained. Prevents discoloration from spreading. In addition, since the convex portion protrudes toward the center of the opening at the opening of the cavity, the sealing resin filled in the cavity can be held without being peeled from the cavity. It becomes possible. Therefore, it is possible to efficiently radiate light from the light emitting element mounted on the bottom surface of the cavity to the outside over a long period of time.

また、本発明の配線基板には、前記絶縁部は、前記基板本体の表面に対し垂直な断面において、窪んだ形状の湾曲面を有する、配線基板(請求項3)も含まれる。
上記「湾曲面」とは、例えば、全体が弓形状、アール状、球面状、パラボラ(放物線)状、双曲面状などとなっているものが含まれ、局所的に微細な凹凸を含んでいても良い。かかる湾曲面の中央付近における接線とキャビティの側面に形成した金属層との間が、上記鈍角を成している。
これによれば、前記凸部の裏面側に、凸部の絶縁材と同一材料からなる窪んだ断面形状の湾曲面を有する絶縁部、および上記鈍角を成す絶縁部の少なくとも一方が位置するため、かかるキャビティの側面に形成された金属層の上に電解メッキにより金属メッキ層を形成する際に、メッキ液の環流が容易となる。この結果、形成される金属メッキ層の端部の厚みがその中心部とほぼ同じとなるため、かかる端部において下地の金属メッキ層を形成するNiなどの金属が析出し、最上層の金属メッキ層である例えばgメッキ層などに変色が広がりにくくなる。従って、長期にわたり、キャビティの底面に実装する発光素子からの光を効率良く外部に放射することが可能となる。
The wiring board of the present invention also includes a wiring board (Claim 3) in which the insulating portion has a concave curved surface in a cross section perpendicular to the surface of the substrate body.
The above “curved surface” includes, for example, one having an overall shape such as an arc shape, a round shape, a spherical shape, a parabola shape, a hyperboloid shape, and the like, and includes locally fine unevenness. Also good. The obtuse angle is formed between the tangent line near the center of the curved surface and the metal layer formed on the side surface of the cavity.
According to this, because at least one of the insulating part having a curved surface with a recessed cross-sectional shape made of the same material as the insulating material of the convex part and the insulating part having the obtuse angle is located on the back side of the convex part, When the metal plating layer is formed by electrolytic plating on the metal layer formed on the side surface of the cavity, the plating solution can be easily circulated. As a result, the thickness of the end portion of the formed metal plating layer is substantially the same as the central portion thereof, so that a metal such as Ni that forms the underlying metal plating layer is deposited at the end portion, and the uppermost metal plating is formed. Discoloration is less likely to spread on a layer such as a g plating layer. Therefore, it is possible to efficiently radiate light from the light emitting element mounted on the bottom surface of the cavity to the outside over a long period of time.

更に、本発明の配線基板には、前記絶縁部は、前記基板本体の表面に対し垂直な断面において、上記基板本体の表面側から裏面側に向かって前記キャビティが広がるように傾斜したテーパ面を有する、配線基板(請求項4)も含まれる。
上記「テーパ面」には、全体が単一の傾斜面に限らず、互いに異なる傾斜角度である複数の傾斜面からなる形態も含まれる。
これによれば、前記凸部の裏面側には、凸部の絶縁材と同一材料からなり前記基板本体の表面側から裏面側に向かってキャビティが広がるように傾斜するテーパ面を有する絶縁部、および前記鈍角を成すように絶縁部の少なくとも一方が位置するため、前記メッキ液の環流が容易となる。この結果、金属メッキ層の端部とその中心部とがほぼ均一な厚みとなるため、かかる端部において下地の金属メッキ層の金属が最上層の金属メッキ層の表面に析出しにくくなり、最上層の金属メッキ層に変色が広がりにくくなる。従って、長期にわたり、キャビティの底面に実装する発光素子からの光を効率良く外部に放射可能となる。
Furthermore, in the wiring board of the present invention, the insulating portion has a tapered surface inclined so that the cavity spreads from the front surface side to the back surface side of the substrate body in a cross section perpendicular to the surface of the substrate body. A wiring board (claim 4) is also included.
The “tapered surface” is not limited to a single inclined surface as a whole, but also includes a plurality of inclined surfaces having different inclination angles.
According to this, the insulating part which has the taper surface which inclines so that a cavity may spread from the surface side of the substrate body toward the back side, which consists of the same material as the insulating material of the convex part on the back side of the convex part, Since at least one of the insulating portions is positioned so as to form the obtuse angle, the plating solution can be easily circulated. As a result, the end portion of the metal plating layer and the central portion thereof have a substantially uniform thickness, so that the metal of the underlying metal plating layer is unlikely to deposit on the surface of the uppermost metal plating layer at the end portion. Discoloration hardly spreads over the upper metal plating layer. Therefore, light from the light emitting element mounted on the bottom surface of the cavity can be efficiently emitted to the outside over a long period of time.

付言すれば、本発明には、前記キャビティの側面は、前記基板本体の裏面(前記キャビティの底面)側から基板本体の表面側に向かって、広がるように傾斜した傾斜面である、配線基板、も含まれ得る。これよる場合、キャビティの底面に実装される発光素子からの光を比較的広角度にて反射することが可能となる。
また、本発明には、前記凸部と前記キャビティの側面とを形成する絶縁層は、互いに積層される別の絶縁層により形成されている、配線基板、も含まれ得る。
これよる場合、凸部を形成する絶縁層の裏面側に溶剤を塗布して軟質化し、または裏面に絶縁性ペーストを形成した一方の絶縁層と、前記キャビティの側面となる貫通孔を有する他方の絶縁層とを積層・圧着することで、底面を除く前記キャビティが形成されると共に、凸部の裏面側の位置に、前記湾曲面またはテーパ面を有する絶縁部を容易に形成することが可能となる。
尚、絶縁層がセラミックからなる場合は勿論、絶縁層が各種の樹脂からなる場合でも、上記方法によって湾曲面やテーパ面を有する絶縁部を形成できる。
In other words, in the present invention, the side surface of the cavity is an inclined surface that is inclined so as to spread from the back surface (bottom surface of the cavity) side of the substrate body toward the surface side of the substrate body, May also be included. In this case, the light from the light emitting element mounted on the bottom surface of the cavity can be reflected at a relatively wide angle.
In addition, the present invention may include a wiring board in which the insulating layer that forms the convex portion and the side surface of the cavity is formed by another insulating layer that is stacked on each other.
In this case, a solvent is applied to the back side of the insulating layer forming the convex portion to soften it, or one insulating layer having an insulating paste formed on the back side, and the other having a through-hole serving as a side surface of the cavity. By laminating and press-bonding an insulating layer, the cavity excluding the bottom surface is formed, and the insulating portion having the curved surface or the tapered surface can be easily formed at the position on the back surface side of the convex portion. Become.
In addition, when the insulating layer is made of ceramic, the insulating portion having a curved surface or a tapered surface can be formed by the above method even when the insulating layer is made of various resins.

更に、本発明には、前記キャビティの側面およびこれに隣接する前記凸を形成する絶縁層の裏面には、連続した金属層が形成されている、配線基板、も含まれ得る。このように、金属層がキャビティの側面と凸部を形成する絶縁層の裏面とに沿って形成されていても、上端部を除いた金属層の部分全体にほぼ均一な厚みにして、金属メッキ層を電解メッキにより形成することが可能となる。   Furthermore, the present invention may include a wiring board in which a continuous metal layer is formed on the side surface of the cavity and the back surface of the insulating layer forming the protrusion adjacent thereto. In this way, even if the metal layer is formed along the side surface of the cavity and the back surface of the insulating layer that forms the convex portion, the metal plating is performed with a substantially uniform thickness over the entire portion of the metal layer except the upper end portion. The layer can be formed by electrolytic plating.

以下において、本発明を実施するための最良の形態について説明する。
図1は、本発明における一形態の配線基板1を示す平面図、図2は、図1中のX−X線の矢視に沿った断面図、図3は、図2中の部分拡大断面図である。
配線基板1は、図1,2に示すように、表面3および裏面4を有し且つセラミック(絶縁材)からなる基板本体2と、かかる基板本体2の表面3に開口し且つ底面6に発光ダイオード(発光素子)15が実装されるキャビティ5と、を含む。
基板本体2は、図1,図2に示すように、平面視がほぼ正方形で所要の厚みを有する直方体を呈し、例えばアルミナを主成分とする複数枚のグリーンシートを積層してセラミックに焼成したものである。因みに、基板本体2のサイズは、約5mm×5mm×0.9mmであり、内部にはWまたはMoを主成分とする図示しない所定パターンの配線層やビア導体が形成され、且つ裏面4には図示しないパッドが形成されている。尚、基板本体2には、例えばガラス−アルミナ系のグリーンシートを複数枚積層して焼成したガラス−セラミックを適用しても良い。
In the following, the best mode for carrying out the present invention will be described.
1 is a plan view showing a wiring board 1 according to an embodiment of the present invention, FIG. 2 is a cross-sectional view taken along the line XX in FIG. 1, and FIG. 3 is a partially enlarged cross-section in FIG. FIG.
As shown in FIGS. 1 and 2, the wiring board 1 has a front surface 3 and a back surface 4 and is made of a ceramic (insulating material) 2. And a cavity 5 in which a diode (light emitting element) 15 is mounted.
As shown in FIGS. 1 and 2, the substrate body 2 has a rectangular parallelepiped shape in a plan view and has a required thickness. For example, a plurality of green sheets mainly composed of alumina are laminated and fired into a ceramic. Is. Incidentally, the size of the substrate body 2 is about 5 mm × 5 mm × 0.9 mm, a wiring layer or via conductor of a predetermined pattern (not shown) mainly composed of W or Mo is formed inside, and the back surface 4 is formed on the back surface 4. A pad (not shown) is formed. For example, glass-ceramic obtained by laminating and firing a plurality of glass-alumina-based green sheets may be applied to the substrate body 2.

図1,図2に示すように、キャビティ5は、平面視が円形の底面6と、かかる底面6の周辺から基板本体2の表面3側に広がるように傾斜した側面7とを有し、ほぼ円錐台形となっている。かかる側面7の仰角は、30〜70度の範囲で適宜選択される。
上記キャビティ5は、グリーンシートを、所要のクリアランスを介するポンチとダイとによる打ち抜き加工により、ほぼ円錐形状に成形されている。因みに、キャビティ5のサイズは、上端の内径約3.6mm×深さ約0.45mmである。
As shown in FIGS. 1 and 2, the cavity 5 has a bottom surface 6 that is circular in a plan view and a side surface 7 that is inclined so as to spread from the periphery of the bottom surface 6 toward the surface 3 side of the substrate body 2. It has a truncated cone shape. The elevation angle of the side surface 7 is appropriately selected within a range of 30 to 70 degrees.
The cavity 5 is formed in a substantially conical shape by punching a green sheet with a punch and a die through a required clearance. Incidentally, the size of the cavity 5 is an inner diameter of the upper end of about 3.6 mm × depth of about 0.45 mm.

図1〜図3に示すように、キャビティ5の側面7における基板本体2の表面3側には、基板本体2の表面3を含む凸部8が、当該キャビティ5の開口部の中央側に向かって、リング形状を呈しつつ突出している。また、基板本体2の表面3に対して垂直な断面において、凸部8の裏面9側には、窪んだ断面形状の湾曲面10aを有する絶縁部10が、キャビティ5の開口部に全周に沿って形成されている。かかる湾曲面10aを有する絶縁部部10は、上記凸部8を形成する絶縁材の一部がキャビティ5の底面6側に延出したものである。尚、かかる「延出」とは、「上記絶縁材が伸び出ている」ことを意味している。
更に、前記キャビティ5の側面7には、WまたはMoからなる金属層11が形成され、その上に上記発光ダイオード15からの光を反射する金属メッキ層12が形成されている。図3に示すように、金属メッキ層(以下、メッキ層とする)12は、金属層11の上に形成されるNiメッキ層13と、その上に形成される光反射用のAgメッキ層14と、から構成される。前記湾曲面10aを有する絶縁部10は、金属層11の上端部11bを覆っている。
尚、メッキ層12は、絶縁部10で覆われた上端部11bよりも下(基板本体2の裏面4)側の金属層11に形成されているが、これに限定されず、少なくとも、絶縁部10付近を除いた金属層11の一部に形成されていれば良い。
図3に示すように、絶縁部10における湾曲面10aの中央付近に接する接線sと、金属層11との間の角度は、90度を超える鈍角θ(例えば、110)である。金属層11のうち、その上端部11bから延びる水平部11aは、基板本体2を構成するセラミック層s2,s3間に進入している。即ち、前記凸部8とキャビティ5の側面7とを形成するセラミック層は、互いに積層される別のセラミック層s2,s3により形成される。
As shown in FIGS. 1 to 3, a convex portion 8 including the surface 3 of the substrate body 2 on the side surface 7 of the side surface 7 of the cavity 5 faces the center side of the opening of the cavity 5. And projecting in a ring shape. Also, in the cross section perpendicular to the front surface 3 of the substrate body 2, the insulating portion 10 having a curved surface 10 a having a depressed cross section is formed on the entire back surface of the convex portion 8 on the back surface 9 side. Are formed along. The insulating portion 10 having such a curved surface 10 a is obtained by extending a part of the insulating material forming the convex portion 8 toward the bottom surface 6 of the cavity 5. The “extension” means that “the insulating material is extended”.
Further, a metal layer 11 made of W or Mo is formed on the side surface 7 of the cavity 5, and a metal plating layer 12 for reflecting light from the light emitting diode 15 is formed thereon. As shown in FIG. 3, a metal plating layer (hereinafter referred to as a plating layer) 12 includes a Ni plating layer 13 formed on the metal layer 11 and a light reflection Ag plating layer 14 formed thereon. And. The insulating part 10 having the curved surface 10 a covers the upper end part 11 b of the metal layer 11.
The plated layer 12 is formed on the metal layer 11 on the lower side (the back surface 4 of the substrate body 2) than the upper end portion 11b covered with the insulating portion 10, but is not limited thereto, and at least the insulating portion. What is necessary is just to be formed in a part of metal layer 11 except 10 vicinity.
As shown in FIG. 3, the angle between the tangent line s in contact with the vicinity of the center of the curved surface 10 a in the insulating portion 10 and the metal layer 11 is an obtuse angle θ (for example, 110) exceeding 90 degrees. Of the metal layer 11, a horizontal portion 11 a extending from the upper end portion 11 b enters between the ceramic layers s 2 and s 3 constituting the substrate body 2. That is, the ceramic layer that forms the convex portion 8 and the side surface 7 of the cavity 5 is formed by separate ceramic layers s2 and s3 that are laminated together.

また、図1,図2に示すように、キャビティ5の底面6における中央部には、図示しないハンダまたはエポキシ系樹脂を介して、発光ダイオード15が実装されると共に、その実装エリアを挟んだ底面6には、一対のパッド16が対称に形成されている。かかるパッド16も、WまたはMoからなり、その表面にはNi、Au、またはAgメッキ層が形成され、図示しないボンディングワイヤを介して、発光ダイオード15と個別に導通される。
更に、上記発光ダイオード15が実装され、且つこれと一対のパッド16とがボンディングワイヤを介して導通されたキャビティ5内には、図2,図3中の一点鎖線で示すように、固化した封止用樹脂jが、例えば、凸部8の裏面9の位置まで充填される。
As shown in FIGS. 1 and 2, a light emitting diode 15 is mounted on the center of the bottom surface 6 of the cavity 5 via solder or epoxy resin (not shown), and a bottom surface sandwiching the mounting area. 6, a pair of pads 16 are formed symmetrically. The pad 16 is also made of W or Mo. A Ni, Au, or Ag plating layer is formed on the surface of the pad 16 and is individually connected to the light emitting diode 15 via a bonding wire (not shown).
Further, in the cavity 5 in which the light emitting diode 15 is mounted and the pad 16 is connected to the pair of pads 16 through a bonding wire, a solidified seal is formed as shown by a one-dot chain line in FIGS. The stopping resin j is filled up to the position of the back surface 9 of the convex portion 8, for example.

図4は、異なる形態の配線基板1aを示す図3と同様な部分拡大断面図である。
配線基板1aも、前記同様の基板本体2、キャビティ5、および凸部8を備えている。また、凸部8の裏面9側には、基板本体2の表面3から裏面4側に向かって広がるように傾斜するテーパ面18aを有する絶縁部18が、キャビティ5の開口部に全周に沿って形成されている。かかるテーパ面18aを有する絶縁部18は、上記凸部8を形成する絶縁材の一部がキャビティ5の底面6側に延出したもので、金属層11の上端部11bを覆っている。絶縁部18のテーパ面18aとキャビティ5の側面7に形成される金属層11との間の角度は、90度を超える鈍角θ(例えば、約100度)である。
更に、キャビティ5の側面7および凸部8を形成するセラミック層の裏面9に沿って、前記同様の金属層11が形成され、かかる金属層11の上にNiメッキ層13と光反射用のAgメッキ層14とから構成されるメッキ層12が形成されている。メッキ層12の上端部は、テーパ部18の下端部付近に位置している。図4中の一点鎖線で示すように、キャビティ5には、封止用樹脂jが充填される。
FIG. 4 is a partially enlarged cross-sectional view similar to FIG. 3, showing a different form of the wiring board 1a.
The wiring board 1 a also includes the same substrate body 2, cavity 5 and convex portion 8 as those described above. In addition, an insulating portion 18 having a tapered surface 18 a inclined so as to spread from the front surface 3 of the substrate body 2 toward the back surface 4 side is provided on the back surface 9 side of the convex portion 8 along the entire circumference of the opening of the cavity 5. Is formed. The insulating part 18 having the tapered surface 18 a is a part of the insulating material forming the convex part 8 extending toward the bottom surface 6 side of the cavity 5 and covers the upper end part 11 b of the metal layer 11. The angle between the tapered surface 18a of the insulating portion 18 and the metal layer 11 formed on the side surface 7 of the cavity 5 is an obtuse angle θ (for example, about 100 degrees) exceeding 90 degrees.
Further, a metal layer 11 similar to that described above is formed along the side surface 7 of the cavity 5 and the back surface 9 of the ceramic layer that forms the convex portion 8, and the Ni plating layer 13 and Ag for light reflection are formed on the metal layer 11. A plating layer 12 composed of the plating layer 14 is formed. The upper end portion of the plating layer 12 is located near the lower end portion of the tapered portion 18. As indicated by the one-dot chain line in FIG. 4, the cavity 5 is filled with a sealing resin j.

以上のような配線基板1,1aは、以下のようにして製造した。
予め、図5の断面図で示すように、例えばアルミナを主成分とするセラミック材料からなるグリーンシートs1〜s3を用意した。尚、かかるグリーンシートs1〜s3と前記セラミック層s1〜s3とは、便宜上共通の符号とした。
最下層のグリーンシートs1は、前記キャビティ5の底面6の一部となる表面6aと裏面4とを有する平板形状を呈し、内部にWまたはMoを主成分とする図示しない所定パターンの配線層やビア導体が形成されている複数枚のグリーンシートの積層体であった。
また、図5において、中層のグリーンシートs2は、所要のクリアランスを介するポンチとダイの受入孔とによる打ち抜き加工、または最小限のクリアランスを介して打ち抜き加工で形成した貫通孔にほぼ円錐台形の金型を押し込むことにより、ほぼ円錐台形の貫通孔17を形成した。かかる貫通孔17の側面とこれに隣接するグリーンシートs2の表面とには、公知の印刷法などにより、WまたはMo粉末を含む金属層11を形成した。
The wiring boards 1 and 1a as described above were manufactured as follows.
As shown in the cross-sectional view of FIG. 5, green sheets s1 to s3 made of a ceramic material mainly composed of alumina, for example, were prepared in advance. The green sheets s1 to s3 and the ceramic layers s1 to s3 are denoted by a common reference for convenience.
The lowermost green sheet s1 has a flat plate shape having a front surface 6a and a rear surface 4 that are part of the bottom surface 6 of the cavity 5, and has a wiring pattern with a predetermined pattern (not shown) containing W or Mo as a main component. It was a laminate of a plurality of green sheets on which via conductors were formed.
Further, in FIG. 5, the middle-layer green sheet s2 has a substantially frustoconical gold shape in a through hole formed by punching with a punch and a die receiving hole with a required clearance or punching with a minimum clearance. A substantially frustoconical through-hole 17 was formed by pushing the mold. A metal layer 11 containing W or Mo powder was formed on the side surface of the through-hole 17 and the surface of the green sheet s2 adjacent thereto by a known printing method or the like.

図5において、最上層のグリーンシートs3は、前記基板本体2の表面3および前記凸部8の裏面9となる裏面9aを有し、打ち抜き加工による偏平な円柱形の貫通孔19を有していた。かかる貫通孔19の内径は、グリーンシートs2の貫通孔17における上端部の内径よりも小径であった。グリーンシートs3の裏面9a側に、フタル酸nブチル、ひまし油、nブチル・アルコールなどの溶剤wを所要の厚みで浸透するように塗布した。
以上のグリーンシートs1〜s3を積層した後、これらを厚み方向に沿って圧着した。あるいは、グリーンシートs1〜s3を隣接する順でそれぞれ積層するごとに圧着した。
その結果、図6に示すように、グリーンシート(s1)s2の上にグリーンシートs3が積層されると共に、基板本体2およびキャビティ5が形成された。同時に、かかるキャビティ5の側面7の上には、基板本体2の表面3を含み、当該キャビティ5の開口部の中央側に向かって、グリーンシートs3が突出した凸部8が形成された。尚、かかる凸部8の厚みは、グリーンシートs2の上に圧着されたグリーンシートs3の厚みよりも、若干厚めであった。
5, the uppermost green sheet s3 has a front surface 3 of the substrate body 2 and a back surface 9a to be the back surface 9 of the convex portion 8, and has a flat cylindrical through-hole 19 by punching. It was. The inner diameter of the through hole 19 was smaller than the inner diameter of the upper end portion of the through hole 17 of the green sheet s2. A solvent w such as n-butyl phthalate, castor oil, or n-butyl alcohol was applied to the back surface 9a side of the green sheet s3 so as to penetrate with a required thickness.
After laminating the above green sheets s1 to s3, these were pressure-bonded along the thickness direction. Alternatively, the green sheets s <b> 1 to s <b> 3 were pressure-bonded each time they were stacked in the adjacent order.
As a result, as shown in FIG. 6, the green sheet s3 was laminated on the green sheet (s1) s2, and the substrate body 2 and the cavity 5 were formed. At the same time, a convex portion 8 including the surface 3 of the substrate body 2 and projecting the green sheet s3 toward the center of the opening of the cavity 5 was formed on the side surface 7 of the cavity 5. In addition, the thickness of the convex portion 8 was slightly thicker than the thickness of the green sheet s3 pressure-bonded on the green sheet s2.

更に、図6に示すように、前記溶剤wにより軟化されたセラミックが圧着に伴う圧力を受けたことで、凸部8を形成するセラミック材料(絶縁材)の一部がキャビティ5の底面6側に延出し(伸び出し)て、金属層11の上端部11bを覆った。この結果、上記凸部8を含む基板本体2の表面3に対し垂直な断面において、窪んだ断面円弧形の湾曲面10aを有する絶縁部10が形成された。
尚、前記グリーンシートs3に対する前記溶剤wの浸透深さや圧着時の圧力を調整して、凸部8を形成するセラミック材料の一部をキャビティ5の底面6側に延出させた。この結果、凸部8の裏面9側に、基板本体2の表面3側から裏面4側に向かって広がるように傾斜するテーパ面18aを有する絶縁部18を形成することができた。
Further, as shown in FIG. 6, the ceramic softened by the solvent w receives a pressure accompanying the pressure bonding, so that a part of the ceramic material (insulating material) forming the convex portion 8 is on the bottom surface 6 side of the cavity 5. The upper end portion 11b of the metal layer 11 was covered. As a result, an insulating portion 10 having a curved surface 10a having a concave cross-sectional arc shape in a cross section perpendicular to the surface 3 of the substrate body 2 including the convex portion 8 was formed.
In addition, the penetration depth of the solvent w with respect to the green sheet s3 and the pressure at the time of pressure bonding were adjusted, and a part of the ceramic material forming the convex portion 8 was extended to the bottom surface 6 side of the cavity 5. As a result, the insulating portion 18 having the tapered surface 18a inclined so as to spread from the front surface 3 side to the back surface 4 side of the substrate body 2 could be formed on the back surface 9 side of the convex portion 8.

そして、グリーンシートs1〜s3を積層・圧着して得られたグリーンシート積層体を、所要の温度帯で焼成した後、電解Niメッキおよび電解Agメッキを順次施すことにより、絶縁部10,18の下側に露出する金属層11の上に、前記Niメッキ層13とAgメッキ層14とからなるメッキ層12を形成した。
上記各メッキ時において、凸部8の裏面9側には、前記湾曲面10aを有する絶縁部10、またはテーパ面18aを有する絶縁部18が形成されていたため、金属層11のうち凸部8に隣接する部分においても、各メッキ液の環流がスムースに行われた。この結果、前記図3,図4で示したように、メッキ層12の端部におけるNiメッキ層13とAgメッキ層14とを、それらの中心部とほぼ同じ厚みとした配線基板1,1aを得ることができた。
尚、上記「ほぼ同じ厚み」とは、端部と中心部との厚みの差が±20%以内である。また、絶縁部10,18の湾曲面10aやテーパ面18aと、キャビティ5の側面に形成した金属層11との間は、それぞれ鈍角θを成していた。
And after baking the green sheet laminated body obtained by laminating | stacking and crimping | bonding the green sheets s1-s3 in a required temperature range, by applying electrolytic Ni plating and electrolytic Ag plating sequentially, the insulating parts 10 and 18 On the metal layer 11 exposed on the lower side, the plating layer 12 composed of the Ni plating layer 13 and the Ag plating layer 14 was formed.
At the time of each plating described above, the insulating portion 10 having the curved surface 10a or the insulating portion 18 having the tapered surface 18a is formed on the back surface 9 side of the protruding portion 8, and thus the protruding portion 8 of the metal layer 11 is formed on the protruding portion 8. Even in the adjacent portions, each plating solution was smoothly circulated. As a result, as shown in FIGS. 3 and 4, the wiring boards 1 and 1a having the Ni plating layer 13 and the Ag plating layer 14 at the end of the plating layer 12 having substantially the same thickness as the central portion thereof are obtained. I was able to get it.
The “substantially the same thickness” means that the difference in thickness between the end portion and the center portion is within ± 20%. In addition, an obtuse angle θ was formed between the curved surface 10 a or the tapered surface 18 a of the insulating portions 10 and 18 and the metal layer 11 formed on the side surface of the cavity 5.

また、図7に示すように、グリーンシートs3の裏面9aにおける貫通孔19の外側に、断面ほぼ半円形の絶縁性ペーストpを平面視が円形のリング形にして形成した後、かかるグリーンシートs3と前記グリーンシートs2,s1とを前記同様に積層して圧着した。尚、上記絶縁性ペーストpは、グリーンシートs1〜s3と同種のアルミナなどを含むと共に、溶剤などの有機成分を若干多く含んでいた。
その結果、図8の部分拡大図で示すように、基板本体2、キャビティ5、および凸部8が前記同様に形成された。
同時に、凸部8の裏面9とキャビティ5の側面7との間には、上記絶縁性ペーストpが圧着に伴う圧力により、凸部8を形成するセラミック材料(絶縁材)の一部がキャビティ5の底面6側に延出した(伸び出した)。この結果、上記凸部8を含む基板本体2の表面3に対し垂直な断面において、かかる基板本体2の表面3側から裏面4側に向かって広がるように傾斜するテーパ面18aを有する絶縁部18を形成できた。
Further, as shown in FIG. 7, after forming an insulating paste p having a substantially semicircular cross section in a ring shape having a circular shape in plan view outside the through hole 19 in the back surface 9a of the green sheet s3, the green sheet s3 And the green sheets s2 and s1 were laminated and pressure-bonded in the same manner as described above. The insulating paste p contained the same kind of alumina as that of the green sheets s1 to s3, and contained some organic components such as a solvent.
As a result, as shown in the partially enlarged view of FIG. 8, the substrate body 2, the cavity 5, and the convex portion 8 were formed in the same manner as described above.
At the same time, a portion of the ceramic material (insulating material) forming the convex portion 8 is formed between the back surface 9 of the convex portion 8 and the side surface 7 of the cavity 5 due to the pressure accompanying the pressure bonding of the insulating paste p. It extended to the bottom face 6 side (extending). As a result, in the cross section perpendicular to the front surface 3 of the substrate body 2 including the convex portion 8, the insulating portion 18 having the tapered surface 18 a inclined so as to spread from the front surface 3 side to the back surface 4 side of the substrate main body 2. Could be formed.

尚、前記絶縁性ペーストpの断面形状や圧着時の圧力を調整することで、凸部8の裏面9側に、前記湾曲面10aを有する絶縁部10を形成することができた。
そして、グリーンシートs1〜s3の積層体を、前記同様に焼成した後、前記電解Niメッキおよび電解Agメッキを順次施すことで、絶縁部10,18の下側に露出する金属層11の上に前記Niメッキ層13とAgメッキ層14とからなるメッキ層12を形成した配線基板1,1aを得ることができた。
上記各メッキ時に、テーパ部18または湾曲部10により、金属層11のうち、凸部8に隣接する部分においても、メッキ液の環流がスムースに行われたため、Niメッキ層13とAgメッキ層14とを、それらの中心部とほぼ同じ厚みとして形成できた。
The insulating portion 10 having the curved surface 10a could be formed on the back surface 9 side of the convex portion 8 by adjusting the cross-sectional shape of the insulating paste p and the pressure during pressure bonding.
Then, after the green sheets s1 to s3 are fired in the same manner as described above, the electrolytic Ni plating and the electrolytic Ag plating are sequentially performed on the metal layer 11 exposed below the insulating portions 10 and 18. The wiring boards 1 and 1a on which the plating layer 12 composed of the Ni plating layer 13 and the Ag plating layer 14 was formed were obtained.
At the time of each plating, the plating solution was smoothly circulated in the portion adjacent to the convex portion 8 of the metal layer 11 by the taper portion 18 or the curved portion 10, and therefore, the Ni plating layer 13 and the Ag plating layer 14. Can be formed with substantially the same thickness as the central part thereof.

以上のような配線基板1,1aによれば、基板本体2の表面3を含む凸部8の裏面9側に、湾曲面10aを有する絶縁部10、またはテーパ面18aを有する絶縁部18が、キャビティ5の側面7に形成した金属層11の上端部11bを覆い且つかかる金属層11との間で鈍角θを成すように形成されていた。このため、前記各メッキ時にメッキ液の環流をスムースに行えた。この結果、キャビティ5の側面7に設けた金属層11の上に、上端部においてもその中心部とほぼ同じ厚みを有するNi・Agメッキ層13,14からなるメッキ層12が確実に形成できた。このため、下地のNiメッキ層のNiが最上層のAgメッキ層14の表面に析出しないので、当該Agメッキ層14の変色の広がりを防止できた。従って、長期にわたり、キャビティ5の底面6に実装される発光ダイオード15からの光を効率良く反射して、外部に放射することができた。
しかも、キャビティ5の側面7の開口部には、全周に沿って凸部8が開口部の中央側に向かって突出していたため、キャビティ5の底面6に発光ダイオード15を実装した後に、かかるキャビティ5内に固化前の封止用樹脂jを充填し且つ固化した。その結果、かかる封止用樹脂jは、上記凸部8に包囲されているため、キャビティ5から剥離することなく、安定した姿勢で保持された。
According to the wiring boards 1 and 1a as described above, the insulating portion 10 having the curved surface 10a or the insulating portion 18 having the tapered surface 18a is provided on the back surface 9 side of the convex portion 8 including the front surface 3 of the substrate body 2. The upper end portion 11 b of the metal layer 11 formed on the side surface 7 of the cavity 5 is covered, and an obtuse angle θ is formed with the metal layer 11. For this reason, the plating solution can be smoothly circulated during each plating. As a result, on the metal layer 11 provided on the side surface 7 of the cavity 5, the plating layer 12 made of Ni / Ag plating layers 13 and 14 having the same thickness as the central portion at the upper end portion could be reliably formed. . For this reason, since Ni of the underlying Ni plating layer does not precipitate on the surface of the uppermost Ag plating layer 14, the discoloration of the Ag plating layer 14 can be prevented from spreading. Therefore, for a long time, the light from the light emitting diode 15 mounted on the bottom surface 6 of the cavity 5 was efficiently reflected and radiated to the outside.
Moreover, since the convex portion 8 protrudes toward the center of the opening at the opening on the side surface 7 of the cavity 5, the cavity 15 is mounted after the light emitting diode 15 is mounted on the bottom surface 6 of the cavity 5. 5 was filled with the sealing resin j before solidification and solidified. As a result, since the sealing resin j was surrounded by the convex portion 8, it was held in a stable posture without peeling from the cavity 5.

図9は、前記配線基板1の変形形態である配線基板20を示す垂直断面図、図10は、図9中の一点鎖線部分Yの拡大図である。
配線基板20は、図9,図10に示すように、セラミック(絶縁材)からなり、表面23および裏面24を有する前記基板本体2と同様の基板本体22と、かかる基板本体22の表面23に開口し、平面視が円形の底面26およびその周辺から垂直に立設する円柱形の側面27からなるキャビティ25と、を備えている。
図9,図10に示すように、キャビティ25の側面27における基板本体22の表面23側には、基板本体22の表面23を含む凸部28が、当該開口部の中央側に向かって、リング形状を呈しつつ突出している。また、凸部28を含む基板本体22の表面23に対し垂直な断面において、凸部28の裏面29側には、上記凸部28を形成するセラミック材料の一部がキャビティ25の底面26側に延出したことで、窪んだ断面円弧形の湾曲面30aを有する絶縁部30が形成されている。
9 is a vertical sectional view showing a wiring board 20 which is a modification of the wiring board 1, and FIG. 10 is an enlarged view of a one-dot chain line portion Y in FIG.
As shown in FIGS. 9 and 10, the wiring substrate 20 is made of ceramic (insulating material), and has a substrate body 22 similar to the substrate body 2 having the front surface 23 and the back surface 24, and the front surface 23 of the substrate body 22. And a cavity 25 having a bottom surface 26 that is circular in a plan view and a cylindrical side surface 27 that stands vertically from the periphery thereof.
As shown in FIGS. 9 and 10, a convex portion 28 including the surface 23 of the substrate body 22 is formed on the side surface 27 of the cavity 25 on the side surface 27 of the cavity 25 toward the center of the opening. It protrudes while presenting its shape. Further, in a cross section perpendicular to the surface 23 of the substrate body 22 including the convex portion 28, a part of the ceramic material forming the convex portion 28 is on the bottom surface 26 side of the cavity 25 on the back surface 29 side of the convex portion 28. By extending, the insulating part 30 which has the curved surface 30a of the recessed circular arc shape is formed.

更に、前記キャビティ25の側面27には、Wなどからなる金属層11が形成され、その上に底面26の中央付近に実装される発光ダイオード15からの光を反射するメッキ層12が形成されている。図10に示すように、メッキ層12は、金属層11上のNiメッキ層13と光反射用のAgメッキ層14とからなる。金属層11の上端部11bは、湾曲面30aを有する絶縁部30に覆われている。
図10に示すように、絶縁部30における湾曲面30aの中央付近に接する接線sと、金属層11との間の角度は、90度を超える鈍角θである。尚、金属層11の上端部11bから延びた水平部11aは、基板本体22を構成するセラミック層s3,s4間に進入している。
また、図9,図10に示すように、キャビティ25の底面26には、前記同様に発光ダイオード15が実装され、その両側には、一対のパッド16が対称に形成される。かかるパッド16も、前記同様に発光ダイオード15と個別に導通される。
Further, a metal layer 11 made of W or the like is formed on the side surface 27 of the cavity 25, and a plating layer 12 that reflects light from the light emitting diode 15 mounted near the center of the bottom surface 26 is formed thereon. Yes. As shown in FIG. 10, the plating layer 12 includes a Ni plating layer 13 on the metal layer 11 and an Ag plating layer 14 for light reflection. The upper end portion 11b of the metal layer 11 is covered with an insulating portion 30 having a curved surface 30a.
As shown in FIG. 10, the angle between the tangent line s in contact with the vicinity of the center of the curved surface 30a in the insulating portion 30 and the metal layer 11 is an obtuse angle θ exceeding 90 degrees. The horizontal portion 11 a extending from the upper end portion 11 b of the metal layer 11 enters between the ceramic layers s 3 and s 4 constituting the substrate body 22.
9 and 10, the light emitting diode 15 is mounted on the bottom surface 26 of the cavity 25 in the same manner as described above, and a pair of pads 16 are formed symmetrically on both sides thereof. The pad 16 is also electrically connected to the light emitting diode 15 individually as described above.

更に、上記発光ダイオード15が実装され、且つこれと一対のパッド16とがボンディングワイヤを介して導通されたキャビティ25内には、図9中の一点鎖線で示すように、固化した封止用樹脂jが、例えば、凸部28の裏面29の位置まで充填される。
図11は、前記配線基板1aの変形形態である配線基板20aを示す図10と同様な部分拡大断面図である。配線基板20aも、前記同様の基板本体22、キャビティ25、および凸部28を備えている。また、凸部28の裏面29側には、基板本体22の表面23側から裏面24側に向かって広がるように傾斜するテーパ面32aを有する絶縁部32が、キャビティ25の開口部に全周に沿って形成されている。かかる絶縁部32は、キャビティ25の側面27に形成した金属層11の上端部11bを覆っており、そのテーパ面32aとキャビティ25の側面27に形成した金属層11との間の角度は、90度を超える鈍角θ(例えば、約140度)である。
Further, in the cavity 25 in which the light emitting diode 15 is mounted and the pair of pads 16 are conducted through bonding wires, a solidified sealing resin as shown by a one-dot chain line in FIG. For example, j is filled up to the position of the back surface 29 of the convex portion 28.
FIG. 11 is a partially enlarged cross-sectional view similar to FIG. 10 showing a wiring board 20a which is a modification of the wiring board 1a. The wiring substrate 20a also includes the same substrate body 22, cavity 25, and convex portion 28 as those described above. Further, on the back surface 29 side of the convex portion 28, an insulating portion 32 having a tapered surface 32 a that is inclined so as to spread from the front surface 23 side to the back surface 24 side of the substrate body 22 is provided around the opening of the cavity 25. Are formed along. The insulating portion 32 covers the upper end portion 11b of the metal layer 11 formed on the side surface 27 of the cavity 25, and the angle between the tapered surface 32a and the metal layer 11 formed on the side surface 27 of the cavity 25 is 90 °. The obtuse angle θ (for example, about 140 degrees) exceeding 60 degrees.

更に、キャビティ25の側面27に沿って、前記同様の金属層11が形成され、かかる金属層11の上にNi・Agメッキ層13,14からなるメッキ層12が形成される。メッキ層12の上端部は、絶縁部32の下端部付近に位置している。前記図9と同様に、キャビティ25には、封止用樹脂jが充填される。
尚、以上のような配線基板20,20aも、前記図5〜図8で示した積層・圧着工程を含む製造方法と同様にして製造された。
Further, the same metal layer 11 as described above is formed along the side surface 27 of the cavity 25, and the plating layer 12 made of Ni · Ag plating layers 13 and 14 is formed on the metal layer 11. The upper end portion of the plating layer 12 is located near the lower end portion of the insulating portion 32. As in FIG. 9, the cavity 25 is filled with a sealing resin j.
The wiring boards 20 and 20a as described above were also manufactured in the same manner as the manufacturing method including the lamination / crimping process shown in FIGS.

以上のような配線基板20,20aによっても、凸部28の裏面29側に、湾曲面30aを有する絶縁部30、またはテーパ面32aを有する絶縁部32が形成されていたため、前記メッキ工程での各メッキ液の環流をスムースに行えた。この結果、キャビティ25の側面27に設けた金属層11上に、上端部でもその中心部とほぼ同じ厚みを有するNi・Agメッキ層13,14からなるメッキ層12を確実に形成できた。このため、下地のNiメッキ層13のNiが最上層のAgメッキ層14の表面に析出せず、かかるAgメッキ層14の変色の広がりを防止できた。従って、長期にわたり、キャビティ25の底面26に実装される発光ダイオード15からの光を効率良く反射して、外部に放射することができた。
しかも、キャビティ25の側面27の開口部には、全周に沿って凸部28が突出しているため、底面26に発光ダイオード15を実装した後に、かかるキャビティ25に封止用樹脂jを充填し且つ固化した際に、かかる封止用樹脂jは、凸部8に包囲されるため、キャビティ25から剥離せず、安定して保持された。
Also with the wiring boards 20 and 20a as described above, the insulating portion 30 having the curved surface 30a or the insulating portion 32 having the tapered surface 32a is formed on the back surface 29 side of the convex portion 28. The circulation of each plating solution was performed smoothly. As a result, on the metal layer 11 provided on the side surface 27 of the cavity 25, the plating layer 12 composed of the Ni / Ag plating layers 13 and 14 having the same thickness as the central portion at the upper end portion could be formed reliably. For this reason, Ni in the underlying Ni plating layer 13 was not deposited on the surface of the uppermost Ag plating layer 14, and the spread of discoloration of the Ag plating layer 14 could be prevented. Therefore, for a long period of time, the light from the light emitting diode 15 mounted on the bottom surface 26 of the cavity 25 can be efficiently reflected and emitted to the outside.
In addition, since the convex portion 28 protrudes along the entire circumference of the opening portion of the side surface 27 of the cavity 25, after the light emitting diode 15 is mounted on the bottom surface 26, the sealing resin j is filled in the cavity 25. Further, when solidified, the sealing resin j was surrounded by the convex portion 8 and thus was not peeled off from the cavity 25 and was stably held.

図12は、異なる形態のキャビティを有する配線基板60の概略を示す平面図、図13は、その変形形態である配線基板60aの概略を示す平面図である。
配線基板60は、図12に示すように、前記同様のセラミックからなり平面視が長方形の基板本体62と、かかる基板本体62の表面63に開口部を有し且つ平面視が長円形の底面66およびその周辺から基板本体62の表面63側に向かって広がるように傾斜するほぼ長円錐台形の側面67からなるキャビティ65と、を備えている。キャビティ65の底面66には、発光ダイオード15およびこれと導通するための図示しないパッドが形成され、当該キャビティ65の側面67には、前記同様の金属層11を介してメッキ層12が形成されている。
FIG. 12 is a plan view showing an outline of a wiring board 60 having cavities of different forms, and FIG. 13 is a plan view showing an outline of a wiring board 60a which is a modified form thereof.
As shown in FIG. 12, the wiring board 60 is made of the same ceramic as described above and has a rectangular board body 62 in plan view, and a bottom face 66 having an opening in the surface 63 of the board body 62 and having an oval shape in plan view. And a cavity 65 composed of a substantially frustoconical side surface 67 that inclines so as to expand from the periphery thereof toward the surface 63 side of the substrate body 62. The bottom surface 66 of the cavity 65 is formed with a light emitting diode 15 and a pad (not shown) for electrical connection therewith, and the side surface 67 of the cavity 65 is formed with the plating layer 12 via the metal layer 11 similar to the above. Yes.

図12に示すように、キャビティ65の側面67の開口部側には、基板本体62の表面63を含む凸部68が、かかる開口部の中央側に向かって突出している。かかる凸部68のキャビティ65側に面した裏面には、当該キャビティ65の底面66側に延出し、前記同様の鈍角を成す湾曲面を有する絶縁部、または鈍角を成すテーパ面を有する絶縁部が設けられている。   As shown in FIG. 12, at the opening side of the side surface 67 of the cavity 65, a convex portion 68 including the surface 63 of the substrate body 62 protrudes toward the center of the opening. On the back surface of the convex portion 68 facing the cavity 65 side, there is an insulating portion extending toward the bottom surface 66 of the cavity 65 and having a curved surface having an obtuse angle, or an insulating portion having a tapered surface having an obtuse angle. Is provided.

一方、配線基板60aは、図13に示すように、前記同様の基板本体62と、かかる基板本体62の表面63に開口部を有し且つ平面視が長円形の底面66およびその周辺から垂直に立設する長円柱形の側面67からなるキャビティ65aと、を備えている。キャビティ65aの底面66にも、発光ダイオード15などが形成され、当該キャビティ65aの側面67には、前記金属層11を介してメッキ層12が形成されている。
図13に示すように、キャビティ65aの側面67の開口部側には、基板本体62の表面63を含む凸部68が前記同様に突出し、かかる凸部68のキャビティ65側aに面した裏面には、当該キャビティ65の底面66側に延出し、前記同様の鈍角を成す湾曲面を有する絶縁部、または鈍角を成すテーパ面を有する絶縁部が設けられている。
On the other hand, as shown in FIG. 13, the wiring board 60a has an opening on the surface 63 of the board main body 62 similar to the above and an oval bottom surface 66 in plan view and perpendicular to the periphery thereof. And a cavity 65a composed of a long cylindrical side surface 67 standing upright. The light emitting diode 15 and the like are also formed on the bottom surface 66 of the cavity 65a, and the plating layer 12 is formed on the side surface 67 of the cavity 65a with the metal layer 11 interposed therebetween.
As shown in FIG. 13, a convex portion 68 including the surface 63 of the substrate main body 62 projects in the same manner as described above on the opening side of the side surface 67 of the cavity 65a, and on the back surface of the convex portion 68 facing the cavity 65 side a. Is provided with an insulating portion having a curved surface having an obtuse angle similar to the above or an insulating portion having a tapered surface having an obtuse angle.

図14は、更に異なる形態のキャビティを有する配線基板70の概略を示す平面図、図15は、その変形形態である配線基板70aの概略を示す平面図である。
配線基板70は、図14に示すように、前記同様のセラミックからなり平面視が長方形の基板本体72と、かかる基板本体72の表面73に開口部を有し且つ平面視が楕円形の底面76およびその周辺から基板本体72の表面73側に向かって広がるように傾斜するほぼ長楕円錐形の側面77からなるキャビティ75と、を備えている。キャビティ75の底面76には、発光ダイオード15およびこれと導通するための図示しないパッドが形成され、当該キャビティ75の側面77には、前記金属層11を介してメッキ層12が形成されている。
FIG. 14 is a plan view showing an outline of a wiring board 70 having cavities of different forms, and FIG. 15 is a plan view showing an outline of a wiring board 70a which is a modified form thereof.
As shown in FIG. 14, the wiring board 70 is made of the same ceramic as described above and has a rectangular board body 72 in plan view, and has an opening in the surface 73 of the board body 72 and has a bottom surface 76 in plan view having an elliptical shape. And a cavity 75 composed of a substantially elliptical conical side surface 77 that inclines so as to spread from the periphery thereof toward the surface 73 side of the substrate body 72. The light emitting diode 15 and a pad (not shown) for electrical connection with the light emitting diode 15 are formed on the bottom surface 76 of the cavity 75, and the plating layer 12 is formed on the side surface 77 of the cavity 75 via the metal layer 11.

図14に示すように、キャビティ75の側面77における基板本体72の表面73側には、基板本体72の表面73を含む凸部78が、キャビティ75の開口部の中央側に向かって突出している。かかる凸部78のキャビティ75側に面した裏面には、当該キャビティ75の底面76側に延出し、前記同様の鈍角を成す湾曲面を有する絶縁部、または鈍角を成すテーパ面を有する絶縁部が設けられている。   As shown in FIG. 14, a convex part 78 including the surface 73 of the substrate body 72 protrudes toward the center side of the opening of the cavity 75 on the surface 73 side of the substrate body 72 on the side surface 77 of the cavity 75. . On the back surface of the convex portion 78 facing the cavity 75 side, there is an insulating portion that extends toward the bottom surface 76 of the cavity 75 and has a curved surface that forms an obtuse angle, or an insulating portion that has a tapered surface that forms an obtuse angle. Is provided.

一方、配線基板70aは、図15に示すように、前記同様の基板本体72と、かかる基板本体72の表面73に開口部を有し且つ平面視が楕円形の底面76およびその周辺から垂直に立設する楕円柱形の側面77からなるキャビティ75aと、を備えている。キャビティ75aの底面76にも、発光ダイオード15などが形成され、当該キャビティ75aの側面77には、前記金属層11を介してメッキ層12が形成されている。
図15に示すように、キャビティ75aの側面77における基板本体72の表面73の側には、基板本体72の表面73を含む凸部78が前記同様に突出し、かかる凸部78のキャビティ75側aに面した裏面には、当該キャビティ75の底面77側に延出し、前記同様の鈍角を成す湾曲面を有する絶縁部、または鈍角を成すテーパ面を有する絶縁部が設けられている。
以上の配線基板60,60a,70,70aも前記同様にして製造され、これらによっても、前記配線基板1,1a,20,20aと同様の効果が奏された。
On the other hand, as shown in FIG. 15, the wiring board 70a has an opening on the surface 73 of the board main body 72 similar to the above and an elliptical bottom surface 76 in the plan view and perpendicular to the periphery thereof. And a cavity 75a composed of an elliptical columnar side surface 77 standing upright. The light emitting diode 15 and the like are also formed on the bottom surface 76 of the cavity 75a, and the plating layer 12 is formed on the side surface 77 of the cavity 75a with the metal layer 11 interposed therebetween.
As shown in FIG. 15, a convex portion 78 including the surface 73 of the substrate main body 72 protrudes on the side surface 77 of the substrate main body 72 on the side surface 77 of the cavity 75a in the same manner as described above. An insulating portion having a curved surface having an obtuse angle similar to the above or an insulating portion having a tapered surface having an obtuse angle is provided on the back surface facing the surface.
The above wiring boards 60, 60a, 70, 70a were also manufactured in the same manner as described above, and the effects similar to those of the wiring boards 1, 1a, 20, 20a were also produced by these.

本発明は、以上において説明した各形態に限定されるものではない。
前記基板本体2,22などを形成する絶縁材であるセラミックは、例えばムライトや窒化アルミニウムを主成分とするものとしても良い。あるいは、低温焼成セラミックの一種であるガラス−セラミックとしても良く、この場合、前記金属層11やパッド16などは、CuやAgなどが用いられる。
また、前記基板本体2,22などを形成する絶縁材をエポキシ系樹脂などとしても良く、かかる樹脂の薄板または金属の薄板の表面上に、例えばエポキシ系樹脂からなる複数層の樹脂絶縁層を順次積層し、公知のフォトリソグラフィ技術によって、比較的上層の各樹脂絶縁層にキャビティを形成しても良い。かかるキャビティの開口部側に前記同様の凸部を形成すると共に、当該凸部の裏面における所要の位置に前記湾曲部またはテーパ部を形成したり、あるいは、かかる凸部の先端面を前記同様の傾斜面としても良い。
The present invention is not limited to the embodiments described above.
The ceramic which is an insulating material forming the substrate bodies 2 and 22 and the like may be mainly composed of mullite or aluminum nitride, for example. Alternatively, a glass-ceramic that is a kind of low-temperature fired ceramic may be used. In this case, the metal layer 11, the pad 16, or the like is made of Cu or Ag.
The insulating material for forming the substrate bodies 2 and 22 may be an epoxy resin or the like, and a plurality of resin insulating layers made of, for example, an epoxy resin are sequentially formed on the surface of the resin thin plate or metal thin plate. Alternatively, the cavities may be formed in each of the relatively upper resin insulation layers by a known photolithography technique. The same convex portion is formed on the opening side of the cavity, and the curved portion or the tapered portion is formed at a required position on the back surface of the convex portion, or the tip surface of the convex portion is the same as the above. It may be an inclined surface.

更に、キャビティの形状は、前記各形態に限らず、平面視で正方形または長方形とし且つこれらの四隅に導電性ペーストを円弧形に充填すると共に、これらの側面に金属層および光反射用のメッキ層を形成するようにしても良い。
また、前記凸部は、キャビティの開口部に沿った全周に位置する形態のほか、キャビティの開口部における複数の箇所に互いに離れて位置する形態としても良い。
加えて、本発明配線基板は、1個の配線基板の表面に開口するキャビティを複数としたり、単一のキャビティの底面に複数の実装エリアを配置し、これらに発光素子を個別に実装する形態とすることも可能である。
Further, the shape of the cavity is not limited to each of the above-mentioned forms, and it is square or rectangular in plan view, and a conductive paste is filled in an arc shape at these four corners, and a metal layer and light reflecting plating are formed on these side surfaces. A layer may be formed.
In addition to the form located on the entire circumference along the opening of the cavity, the protrusions may be arranged apart from each other at a plurality of locations in the opening of the cavity.
In addition, the wiring board of the present invention has a configuration in which a plurality of cavities are formed on the surface of one wiring board, or a plurality of mounting areas are arranged on the bottom surface of a single cavity, and light emitting elements are individually mounted on these. It is also possible.

本発明における一形態の配線基板を示す平面図。The top view which shows the wiring board of one form in this invention. 図1中のX−X線の矢視に沿った断面図。Sectional drawing along the arrow of the XX in FIG. 図2中における凸部の付近を拡大した部分断面図。The fragmentary sectional view which expanded the vicinity of the convex part in FIG. 異なる形態の配線基板を示す図3と同様な部分断面図。The fragmentary sectional view similar to FIG. 3 which shows the wiring board of a different form. 上記各配線基板の一製造工程を示す概略図。Schematic which shows one manufacturing process of each said wiring board. 図5に続く製造工程を示す部分概略図。FIG. 6 is a partial schematic diagram illustrating a manufacturing process subsequent to FIG. 5. 異なる形態の一製造工程を示す概略図。Schematic which shows one manufacturing process of a different form. 図6に続く製造工程を示す部分概略図。FIG. 7 is a partial schematic diagram illustrating a manufacturing process subsequent to FIG. 6. 図1の配線基板の変形形態を示す垂直断面図。FIG. 3 is a vertical sectional view showing a modified embodiment of the wiring board of FIG. 1. 図9中の一点鎖線部分Yを示す部分拡大断面図。The partial expanded sectional view which shows the dashed-dotted line part Y in FIG. 図4の配線基板の変形形態を示す図10と同様な部分拡大断面図。FIG. 11 is a partially enlarged cross-sectional view similar to FIG. 10 showing a modified embodiment of the wiring board of FIG. 4. 更に異なる形態の配線基板を示す平面図。Furthermore, the top view which shows the wiring board of a different form. 上記配線基板の変形形態の概略を示す平面図。The top view which shows the outline of the deformation | transformation form of the said wiring board. 別なる形態の配線基板を示す平面図。The top view which shows the wiring board of another form. 上記配線基板の変形形態の概略を示す平面図。The top view which shows the outline of the deformation | transformation form of the said wiring board.

符号の説明Explanation of symbols

1,1a,20,20a,60,60a,70,70a…配線基板
2,22,62,72…………………………………基板本体
3,23,63,73…………………………………表面
4,24…………………………………………………裏面
5,25,60,60a,70,70a…………………キャビティ
6,26,66,76…………………………………底面
7,27,67,77…………………………………側面
8,28,………………………………………………凸部
9,29…………………………………………………凸部の裏面
10,30………………………………………………絶縁部
10a,30a…………………………………………湾曲面
11………………………………………………………金属層
11b……………………………………………………上端部
12………………………………………………………メッキ層
15………………………………………………………発光素子
18,32………………………………………………絶縁部
18a,32a…………………………………………テーパ面
θ…………………………………………………………鈍角
1,1a, 20,20a, 60,60a, 70,70a ... wiring board 2,22,62,72 …………………………………… PCB body 3, 23, 63, 73 ……… ………………………… Front side 4,24 ………………………………………………… Back side 5, 25, 60, 60a, 70, 70a …………… …… Cavity 6, 26, 66, 76 ………………………………… Bottom surface 7, 27, 67, 77 ………………………………… Side surface 8, 28,… …………………………………………… Convex 9, 29 ………………………………………………… Back of convex 10, 10, 30 …… ………………………………………… Insulating part 10a, 30a ………………………………………… Curved surface 11 ………………………… …………………………… Metal layer 11b ……………………………………… …………… Upper end 12 ……………………………………………………… Plating layer 15 ……………………………………………… ......... Light-emitting element 18, 32 ............ ……………………………… Insulator 18a, 32a ………………………………………… Tapered surface θ …………………………………………………………obtuse angle

Claims (4)

絶縁材からなり、且つ表面および裏面を有する基板本体と、
上記基板本体の表面に開口部を有し、底面、側面、およびかかる側面の上記表面側において上記開口部に向かって突出する凸部を有するキャビティと、
上記側面に形成した金属層と、
上記凸部の裏面側において、上記金属層との間で鈍角を成す絶縁部と、を備える、
ことを特徴とする配線基板。
A substrate body made of an insulating material and having a front surface and a back surface;
A cavity having an opening on the surface of the substrate body, a bottom surface, a side surface, and a convex portion protruding toward the opening on the surface side of the side surface;
A metal layer formed on the side surface;
On the back side of the convex part, an insulating part that forms an obtuse angle with the metal layer,
A wiring board characterized by that.
絶縁材からなり、且つ表面および裏面を有する基板本体と、
上記基板本体の表面に開口部を有し、底面、側面、およびかかる側面において上記開口部の中央側に向かって突出する凸部を有するキャビティと、
上記側面に形成した金属層と、
上記金属層の少なくとも上端部を覆う絶縁部と、を備える、
ことを特徴とする配線基板。
A substrate body made of an insulating material and having a front surface and a back surface;
A cavity having an opening on the surface of the substrate body, a bottom surface, a side surface, and a convex portion protruding toward the center side of the opening on the side surface;
A metal layer formed on the side surface;
An insulating portion covering at least the upper end portion of the metal layer,
A wiring board characterized by that.
前記絶縁部は、前記基板本体の表面に対し垂直な断面において、窪んだ形状の湾曲面を有する、
ことを特徴とする請求項1または2に記載の配線基板。
The insulating part has a concave curved surface in a cross section perpendicular to the surface of the substrate body.
The wiring board according to claim 1 or 2, wherein
前記絶縁部は、前記基板本体の表面に対し垂直な断面において、上記基板本体の表面側から裏面側に向かって前記キャビティが広がるように傾斜したテーパ面を有する、
ことを特徴とする請求項1または2に記載の配線基板。
The insulating portion has a tapered surface inclined so that the cavity spreads from the front surface side to the back surface side of the substrate main body in a cross section perpendicular to the surface of the substrate main body.
The wiring board according to claim 1 or 2, wherein
JP2006104890A 2005-04-25 2006-04-06 Wiring board Expired - Fee Related JP4309897B2 (en)

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Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007012792A (en) * 2005-06-29 2007-01-18 Kyocera Corp Package for light emitting device storage, light source and light emitting device
JP2009164225A (en) * 2007-12-28 2009-07-23 Stanley Electric Co Ltd Light-emitting device and its manufacturing method
JP2010517272A (en) * 2007-01-19 2010-05-20 クリー, インコーポレイティッド High performance LED package
JP2013038190A (en) * 2011-08-05 2013-02-21 Dainippon Printing Co Ltd Method for manufacturing substrate with reflector
JP2013197368A (en) * 2012-03-21 2013-09-30 Kyocera Corp Substrate for mounting light-emitting element and light-emitting device using the same
JP2013229439A (en) * 2012-04-25 2013-11-07 Kyocera Corp Substrate for mounting light emitting element and light emitting device using the same
JP2019186441A (en) * 2018-04-13 2019-10-24 日本特殊陶業株式会社 Wiring board and manufacturing method of the same

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007012792A (en) * 2005-06-29 2007-01-18 Kyocera Corp Package for light emitting device storage, light source and light emitting device
JP2010517272A (en) * 2007-01-19 2010-05-20 クリー, インコーポレイティッド High performance LED package
JP2009164225A (en) * 2007-12-28 2009-07-23 Stanley Electric Co Ltd Light-emitting device and its manufacturing method
JP2013038190A (en) * 2011-08-05 2013-02-21 Dainippon Printing Co Ltd Method for manufacturing substrate with reflector
JP2013197368A (en) * 2012-03-21 2013-09-30 Kyocera Corp Substrate for mounting light-emitting element and light-emitting device using the same
JP2013229439A (en) * 2012-04-25 2013-11-07 Kyocera Corp Substrate for mounting light emitting element and light emitting device using the same
JP2019186441A (en) * 2018-04-13 2019-10-24 日本特殊陶業株式会社 Wiring board and manufacturing method of the same

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