JP2006332365A5 - - Google Patents

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Publication number
JP2006332365A5
JP2006332365A5 JP2005154382A JP2005154382A JP2006332365A5 JP 2006332365 A5 JP2006332365 A5 JP 2006332365A5 JP 2005154382 A JP2005154382 A JP 2005154382A JP 2005154382 A JP2005154382 A JP 2005154382A JP 2006332365 A5 JP2006332365 A5 JP 2006332365A5
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JP
Japan
Prior art keywords
compound semiconductor
layer
group iii
iii nitride
nitride compound
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP2005154382A
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English (en)
Japanese (ja)
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JP2006332365A (ja
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Priority to JP2005154382A priority Critical patent/JP2006332365A/ja
Priority claimed from JP2005154382A external-priority patent/JP2006332365A/ja
Publication of JP2006332365A publication Critical patent/JP2006332365A/ja
Publication of JP2006332365A5 publication Critical patent/JP2006332365A5/ja
Withdrawn legal-status Critical Current

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JP2005154382A 2005-05-26 2005-05-26 Ｉｉｉ族窒化物系化合物半導体発光素子およびそれを用いた発光装置 Withdrawn JP2006332365A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2005154382A JP2006332365A (ja) 2005-05-26 2005-05-26 Ｉｉｉ族窒化物系化合物半導体発光素子およびそれを用いた発光装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2005154382A JP2006332365A (ja) 2005-05-26 2005-05-26 Ｉｉｉ族窒化物系化合物半導体発光素子およびそれを用いた発光装置

Publications (2)

Publication Number Publication Date
JP2006332365A JP2006332365A (ja) 2006-12-07
JP2006332365A5 true JP2006332365A5 (https=) 2007-11-15

Family

ID=37553733

Family Applications (1)

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JP2005154382A Withdrawn JP2006332365A (ja) 2005-05-26 2005-05-26 Ｉｉｉ族窒化物系化合物半導体発光素子およびそれを用いた発光装置

Country Status (1)

Country Link
JP (1) JP2006332365A (https=)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009123803A (ja) * 2007-11-13 2009-06-04 Sanyo Electric Co Ltd 発光ダイオード装置
JP5627174B2 (ja) * 2008-11-26 2014-11-19 京セラ株式会社 発光素子
JP2012169383A (ja) * 2011-02-11 2012-09-06 Toyoda Gosei Co Ltd Ｉｉｉ族窒化物半導体発光素子およびその製造方法
JP5737111B2 (ja) * 2011-03-30 2015-06-17 豊田合成株式会社 Ｉｉｉ族窒化物半導体発光素子
JP2013008803A (ja) 2011-06-23 2013-01-10 Toyoda Gosei Co Ltd Ｉｉｉ族窒化物半導体発光素子の製造方法
JP5558454B2 (ja) 2011-11-25 2014-07-23 シャープ株式会社 窒化物半導体発光素子および窒化物半導体発光素子の製造方法
KR101843513B1 (ko) * 2012-02-24 2018-03-29 서울바이오시스 주식회사 질화갈륨계 발광 다이오드

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3892074B2 (ja) * 1996-03-18 2007-03-14 富士通株式会社 半導体発光素子
JP3433038B2 (ja) * 1997-02-24 2003-08-04 株式会社東芝 半導体発光装置
JP3063757B1 (ja) * 1998-11-17 2000-07-12 日亜化学工業株式会社 窒化物半導体素子
JP3519990B2 (ja) * 1998-12-09 2004-04-19 三洋電機株式会社 発光素子及びその製造方法
JP2001168385A (ja) * 1999-12-06 2001-06-22 Toyoda Gosei Co Ltd Ｉｉｉ族窒化物系化合物半導体素子及びｉｉｉ族窒化物系化合物半導体発光素子
JP2002084000A (ja) * 2000-07-03 2002-03-22 Toyoda Gosei Co Ltd Ｉｉｉ族窒化物系化合物半導体発光素子
US6958497B2 (en) * 2001-05-30 2005-10-25 Cree, Inc. Group III nitride based light emitting diode structures with a quantum well and superlattice, group III nitride based quantum well structures and group III nitride based superlattice structures
CN101789482B (zh) * 2003-03-10 2013-04-17 丰田合成株式会社 固体元件装置及其制造方法
JP4572597B2 (ja) * 2003-06-20 2010-11-04 日亜化学工業株式会社 窒化物半導体素子

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