JP2006332365A - Ｉｉｉ族窒化物系化合物半導体発光素子およびそれを用いた発光装置 - Google Patents

Ｉｉｉ族窒化物系化合物半導体発光素子およびそれを用いた発光装置 Download PDF

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Publication number
JP2006332365A
JP2006332365A JP2005154382A JP2005154382A JP2006332365A JP 2006332365 A JP2006332365 A JP 2006332365A JP 2005154382 A JP2005154382 A JP 2005154382A JP 2005154382 A JP2005154382 A JP 2005154382A JP 2006332365 A JP2006332365 A JP 2006332365A
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Japan
Prior art keywords
compound semiconductor
nitride compound
layer
group iii
iii nitride
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JP2005154382A
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Japanese (ja)
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JP2006332365A5 (https=
Inventor
Tetsuya Taki
瀧　　哲也
Koji Okuno
浩司 奥野
Shuhei Yamada
修平 山田
Kazuki Nishijima
和樹 西島
Mitsuhisa Ubukawa
満久 生川
Masataka Aoki
真登 青木
Yoshinobu Suehiro
好伸 末広
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Toyoda Gosei Co Ltd
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Toyoda Gosei Co Ltd
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Priority to JP2005154382A priority Critical patent/JP2006332365A/ja
Publication of JP2006332365A publication Critical patent/JP2006332365A/ja
Publication of JP2006332365A5 publication Critical patent/JP2006332365A5/ja
Withdrawn legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/721—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors
    • H10W90/724—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors between a chip and a stacked insulating package substrate, interposer or RDL

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JP2005154382A 2005-05-26 2005-05-26 Ｉｉｉ族窒化物系化合物半導体発光素子およびそれを用いた発光装置 Withdrawn JP2006332365A (ja)

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JP2005154382A JP2006332365A (ja) 2005-05-26 2005-05-26 Ｉｉｉ族窒化物系化合物半導体発光素子およびそれを用いた発光装置

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JP2005154382A JP2006332365A (ja) 2005-05-26 2005-05-26 Ｉｉｉ族窒化物系化合物半導体発光素子およびそれを用いた発光装置

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JP2006332365A true JP2006332365A (ja) 2006-12-07
JP2006332365A5 JP2006332365A5 (https=) 2007-11-15

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Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009123803A (ja) * 2007-11-13 2009-06-04 Sanyo Electric Co Ltd 発光ダイオード装置
JP2010129654A (ja) * 2008-11-26 2010-06-10 Kyocera Corp 発光素子
JP2012169383A (ja) * 2011-02-11 2012-09-06 Toyoda Gosei Co Ltd Ｉｉｉ族窒化物半導体発光素子およびその製造方法
JP2012216751A (ja) * 2011-03-30 2012-11-08 Toyoda Gosei Co Ltd Ｉｉｉ族窒化物半導体発光素子
CN102842658A (zh) * 2011-06-23 2012-12-26 丰田合成株式会社 用于制造第iii族氮化物半导体发光器件的方法
JP2013115105A (ja) * 2011-11-25 2013-06-10 Sharp Corp 窒化物半導体発光素子および窒化物半導体発光素子の製造方法
JP2015511407A (ja) * 2012-02-24 2015-04-16 ソウル バイオシス カンパニー リミテッドＳｅｏｕｌ Ｖｉｏｓｙｓ Ｃｏ．，Ｌｔｄ． 窒化ガリウム系発光ダイオード

Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH09260725A (ja) * 1996-03-18 1997-10-03 Fujitsu Ltd 半導体発光素子
JPH10242512A (ja) * 1997-02-24 1998-09-11 Toshiba Corp 半導体発光装置
JP2000232259A (ja) * 1998-12-09 2000-08-22 Sanyo Electric Co Ltd 発光素子及びその製造方法
JP2000286509A (ja) * 1998-11-17 2000-10-13 Nichia Chem Ind Ltd 窒化物半導体素子
JP2001168385A (ja) * 1999-12-06 2001-06-22 Toyoda Gosei Co Ltd Ｉｉｉ族窒化物系化合物半導体素子及びｉｉｉ族窒化物系化合物半導体発光素子
JP2002084000A (ja) * 2000-07-03 2002-03-22 Toyoda Gosei Co Ltd Ｉｉｉ族窒化物系化合物半導体発光素子
WO2004082036A1 (ja) * 2003-03-10 2004-09-23 Toyoda Gosei Co., Ltd. 固体素子デバイスおよびその製造方法
JP2005033197A (ja) * 2003-06-20 2005-02-03 Nichia Chem Ind Ltd 窒化物半導体素子
JP2005507155A (ja) * 2001-05-30 2005-03-10 クリー　インコーポレイテッド 量子井戸と超格子とを有するｉｉｉ族窒化物系発光ダイオード構造

Patent Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH09260725A (ja) * 1996-03-18 1997-10-03 Fujitsu Ltd 半導体発光素子
JPH10242512A (ja) * 1997-02-24 1998-09-11 Toshiba Corp 半導体発光装置
JP2000286509A (ja) * 1998-11-17 2000-10-13 Nichia Chem Ind Ltd 窒化物半導体素子
JP2000232259A (ja) * 1998-12-09 2000-08-22 Sanyo Electric Co Ltd 発光素子及びその製造方法
JP2001168385A (ja) * 1999-12-06 2001-06-22 Toyoda Gosei Co Ltd Ｉｉｉ族窒化物系化合物半導体素子及びｉｉｉ族窒化物系化合物半導体発光素子
JP2002084000A (ja) * 2000-07-03 2002-03-22 Toyoda Gosei Co Ltd Ｉｉｉ族窒化物系化合物半導体発光素子
JP2005507155A (ja) * 2001-05-30 2005-03-10 クリー　インコーポレイテッド 量子井戸と超格子とを有するｉｉｉ族窒化物系発光ダイオード構造
WO2004082036A1 (ja) * 2003-03-10 2004-09-23 Toyoda Gosei Co., Ltd. 固体素子デバイスおよびその製造方法
JP2005033197A (ja) * 2003-06-20 2005-02-03 Nichia Chem Ind Ltd 窒化物半導体素子

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009123803A (ja) * 2007-11-13 2009-06-04 Sanyo Electric Co Ltd 発光ダイオード装置
JP2010129654A (ja) * 2008-11-26 2010-06-10 Kyocera Corp 発光素子
JP2012169383A (ja) * 2011-02-11 2012-09-06 Toyoda Gosei Co Ltd Ｉｉｉ族窒化物半導体発光素子およびその製造方法
JP2012216751A (ja) * 2011-03-30 2012-11-08 Toyoda Gosei Co Ltd Ｉｉｉ族窒化物半導体発光素子
CN102842658A (zh) * 2011-06-23 2012-12-26 丰田合成株式会社 用于制造第iii族氮化物半导体发光器件的方法
US8878232B2 (en) 2011-06-23 2014-11-04 Toyoda Gosei Co., Ltd. Method for producing group III nitride semiconductor light-emitting device
JP2013115105A (ja) * 2011-11-25 2013-06-10 Sharp Corp 窒化物半導体発光素子および窒化物半導体発光素子の製造方法
US9099586B2 (en) 2011-11-25 2015-08-04 Sharp Kabushiki Kaisha Nitride semiconductor light-emitting element and method for producing nitride semiconductor light-emitting element
JP2015511407A (ja) * 2012-02-24 2015-04-16 ソウル バイオシス カンパニー リミテッドＳｅｏｕｌ Ｖｉｏｓｙｓ Ｃｏ．，Ｌｔｄ． 窒化ガリウム系発光ダイオード
US9853182B2 (en) 2012-02-24 2017-12-26 Seoul Viosys Co., Ltd. Gallium nitride-based light emitting diode
KR101843513B1 (ko) * 2012-02-24 2018-03-29 서울바이오시스 주식회사 질화갈륨계 발광 다이오드

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