JP2006319333A5 - - Google Patents

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Publication number
JP2006319333A5
JP2006319333A5 JP2006129663A JP2006129663A JP2006319333A5 JP 2006319333 A5 JP2006319333 A5 JP 2006319333A5 JP 2006129663 A JP2006129663 A JP 2006129663A JP 2006129663 A JP2006129663 A JP 2006129663A JP 2006319333 A5 JP2006319333 A5 JP 2006319333A5
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JP
Japan
Prior art keywords
light
active layer
emitting device
bridge
substrate
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Granted
Application number
JP2006129663A
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English (en)
Japanese (ja)
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JP4413884B2 (ja
JP2006319333A (ja
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Publication date
Priority claimed from TW095109419A external-priority patent/TW200640045A/zh
Application filed filed Critical
Publication of JP2006319333A publication Critical patent/JP2006319333A/ja
Publication of JP2006319333A5 publication Critical patent/JP2006319333A5/ja
Application granted granted Critical
Publication of JP4413884B2 publication Critical patent/JP4413884B2/ja
Anticipated expiration legal-status Critical
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JP2006129663A 2005-05-13 2006-05-08 交流発光装置及びその製造方法 Active JP4413884B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
TW94115514 2005-05-13
TW095109419A TW200640045A (en) 2005-05-13 2006-03-20 Alternating current light-emitting device

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2009207007A Division JP2009290239A (ja) 2005-05-13 2009-09-08 交流発光装置

Publications (3)

Publication Number Publication Date
JP2006319333A JP2006319333A (ja) 2006-11-24
JP2006319333A5 true JP2006319333A5 (https=) 2008-04-10
JP4413884B2 JP4413884B2 (ja) 2010-02-10

Family

ID=37311289

Family Applications (2)

Application Number Title Priority Date Filing Date
JP2006129663A Active JP4413884B2 (ja) 2005-05-13 2006-05-08 交流発光装置及びその製造方法
JP2009207007A Pending JP2009290239A (ja) 2005-05-13 2009-09-08 交流発光装置

Family Applications After (1)

Application Number Title Priority Date Filing Date
JP2009207007A Pending JP2009290239A (ja) 2005-05-13 2009-09-08 交流発光装置

Country Status (6)

Country Link
US (1) US7544524B2 (https=)
JP (2) JP4413884B2 (https=)
KR (1) KR100858319B1 (https=)
DE (1) DE102006021648B4 (https=)
NL (1) NL1031772C2 (https=)
TW (1) TW200640045A (https=)

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US20090036801A1 (en) * 2007-08-01 2009-02-05 Yu-Che Chuang Hand-eye coordination test instrument
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KR100966372B1 (ko) * 2007-11-23 2010-06-28 삼성엘이디 주식회사 모놀리식 발광다이오드 어레이 및 그 제조방법
TWM343922U (en) * 2007-12-14 2008-11-01 Eorex Corp LED matrix structure
TWI416993B (zh) * 2008-05-21 2013-11-21 Interlight Optotech Corp 交流電發光二極體模組及其應用之光源裝置與其製造方法
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KR100981275B1 (ko) * 2008-09-25 2010-09-10 주식회사 에피밸리 3족 질화물 반도체 발광소자
DE102009030549A1 (de) 2009-06-25 2010-12-30 Osram Opto Semiconductors Gmbh Optisches Projektionsgerät
KR101106137B1 (ko) * 2009-09-25 2012-01-20 서울옵토디바이스주식회사 전파 발광셀 및 반파 발광셀을 갖는 교류용 발광 다이오드
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TWI499347B (zh) * 2009-12-31 2015-09-01 晶元光電股份有限公司 發光元件
WO2011115361A2 (ko) 2010-03-15 2011-09-22 서울옵토디바이스주식회사 복수개의 발광셀들을 갖는 발광 장치
KR101649267B1 (ko) * 2010-04-30 2016-08-18 서울바이오시스 주식회사 복수개의 발광셀들을 갖는 발광 다이오드
KR101039609B1 (ko) 2010-05-24 2011-06-09 엘지이노텍 주식회사 발광 소자, 발광 소자의 제조방법 및 발광 소자 패키지
US9070851B2 (en) 2010-09-24 2015-06-30 Seoul Semiconductor Co., Ltd. Wafer-level light emitting diode package and method of fabricating the same
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CN103022276B (zh) * 2011-09-26 2015-08-26 比亚迪股份有限公司 一种ac led芯片的制备方法
US8760058B2 (en) * 2012-02-02 2014-06-24 Posco Led Company Ltd. Heat sink and LED illuminating apparatus comprising the same
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JP2014007208A (ja) * 2012-06-22 2014-01-16 Nano Material Kenkyusho:Kk 半導体デバイス
US9159652B2 (en) * 2013-02-25 2015-10-13 Stmicroelectronics S.R.L. Electronic device comprising at least a chip enclosed in a package and a corresponding assembly process
CN103137646A (zh) * 2013-03-15 2013-06-05 中国科学院微电子研究所 用于双极型阻变存储器交叉阵列集成方式的选通器件单元
US9748443B2 (en) * 2013-03-18 2017-08-29 Epistar Corporation Light emitting device
TWI723886B (zh) * 2013-03-18 2021-04-01 晶元光電股份有限公司 發光元件
KR102374171B1 (ko) * 2015-04-16 2022-03-15 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드 발광소자 패키지
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