JP2006306957A - 導電材料および導電膜ならびにそれらの製造方法 - Google Patents
導電材料および導電膜ならびにそれらの製造方法 Download PDFInfo
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- C—CHEMISTRY; METALLURGY
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- C08J—WORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
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Abstract
【解決手段】 π共役系高分子をイオン液体と接触処理させて導電材料を得る。
【選択図】 なし
Description
高分子の伝導度(σ)は、高分子中の移動可能なキャリア(電子)の密度(n)、キャリアの動き易さを示す移動度(μ)、および電子の電荷(e)の積として、次式(1)で表される。
サイトウ(Y.Saito)ら、ジャーナル・オブ・フォトケミストリー・アンド・フォトバイオロジー・エイ:ケミストリー(J.Photochem.Photobiol.A:Chem.)、2004年、第164巻、p.153 シバタ(Y.Shibata)ら、ケミカル・コミュニケーションズ(Chem.Commun.)、2003年、p.2730−2731
すなわち本発明は、π共役系高分子をイオン液体と接触処理させてなることを特徴とする導電材料を提供する。
この導電材料においては、前記導電材料の伝導度がイオン液体と接触処理させる前のπ共役系高分子の伝導度の10倍以上であることも可能である。
この導電膜においては、前記導電膜のシート抵抗がイオン液体と接触処理させる前のπ共役系高分子膜のシート抵抗の0.1倍以下であることも可能である。
イオン液体には、本発明の効果を阻害しない範囲で他の物質、例えばヨウ素などの添加物を添加することもできる。
膜厚(t)は、接触針式表面形状測定装置(Sloan社製、Dektak 3030)により測定した。
シート抵抗(ρs)は、JIS K 6911に準拠して、抵抗率計(ダイヤインスツルメンツ社製、ロレスターGP、MCP−T610型)に、4端子4探針PSP型プローブ(MCP−TP06P)を装備して測定した。
体積抵抗率(ρv)は、シート抵抗(ρs)と膜厚(t)との積として表される(すなわちρv=ρst)ので、伝導度(σ)は、上記測定方法によって測定した膜厚およびシート抵抗の測定値から、次式(2)により算出した。
π共役系高分子として市販のポリ(3,4−エチレンジオキシチオフェン)(PEDOT)とポリ(スチレンスルホン酸)(PSS)の塩(PEDOT/PSS)を用い、このPEDOT/PSSの水分散液(Aldrich製)を、酢酸セルロースフィルター(0.8μm)でろ過し、得られたろ液を10mm角のスライドガラス上にキャスト法により塗布した。得られた塗膜を室温で15分以上乾燥し、続いて85℃で15分以上熱処理することにより、導電膜として、PEDOT/PSS膜を得た。
この操作において、イオン液体HMImIは、PEDOTおよびPSSの酸化還元を起こさない電位を持っており、高分子膜のキャリア密度(n)の変化をもたらさない。
図1に、実施例1における膜厚およびシート抵抗の経時変化を示す。サンプル数は3とした。図1中、白丸は各サンプルの膜厚を、黒丸は膜厚の平均値を、白三角は各サンプルのシート抵抗を、黒三角はシート抵抗の平均値を、それぞれ示す。
なお、図1および表1の「時間」は、導電膜をイオン液体(HMImI)に浸漬し、85℃で保持した時間(すなわち処理時間)を表す。
イオン液体(HMImI)によるPEDOT/PSS膜の処理を行う処理温度を室温とし、浸漬の処理時間を6日間とした以外は実施例1に同様に浸漬処理を行い、イオン液体で処理する前および処理した後の導電膜の膜厚およびシート抵抗を測定した。PEDOT/PSS膜の製膜方法も実施例1に同様である。膜厚、シート抵抗、および伝導度の測定結果(サンプル数3個の平均値)を表2に示す。
イオン液体として、HMImI、ビス(トリフルオロメタンスルホン酸)イミド1−エチル−3−メチルイミダゾリウム(EMImTFSI)、あるいは、HMImIとヨウ素(I2)の10:1混合物を用い、イオン液体によるPEDOT/PSS膜の処理を行う処理温度を室温とし、浸漬の処理時間を40時間とした以外は実施例1に同様に浸漬処理を行い、イオン液体で処理する前および処理した後の導電膜のシート抵抗を測定した。PEDOT/PSS膜の製膜方法も実施例1に同様である。シート抵抗の測定結果(サンプル数1個の代表値)を表3に示す。
PEDOT/PSS膜の製膜をスピンコート法(2,500回転毎分、30秒)で行った。すなわち、上記PEDOT/PSSの水分散液(Aldrich製)を、酢酸セルロースフィルター(0.8μm)でろ過し、得られたろ液をガラス上にスピンコートした後、室温で15分以上乾燥し、続いて85℃で15分以上熱処理して、PEDOT/PSS膜を得た。この操作を3回繰り返して、膜厚0.24±0.04μmのPEDOT/PSS膜を作製した。なお、このスピンコート法による膜厚は、実施例1に示したキャスト成膜の場合に比べておよそ1/10である。
PEDOT/PSS膜の製膜を実施例4と同様にスピンコート法で行った。また、実施例4のイオン液体に代えて、水、アセトニトリル(AN)、エチレンカーボネート(EC)、あるいはトルエン(Toluene)を用いて浸漬処理を行う以外は実施例4と同様に浸漬処理(室温で1週間)を行い、イオン液体で処理する前および処理した後の導電膜のシート抵抗を測定した。シート抵抗の測定結果(サンプル数3個の平均値)を表5に示す。
PEDOT/PSS膜の成膜を実施例4と同様にスピンコート法で行った。また、実施例1のイオン液体に代えて、HMImI、EMImTFSI、あるいは過塩素酸リチウム(LiClO4)のアセトニトリル(AN)希薄溶液(濃度0.2mol/dm3)を用いて浸漬処理を行う以外は実施例1と同様に浸漬処理(85℃で5時間)を行い、イオン液体で処理する前および処理した後の導電膜のシート抵抗を測定した。シート抵抗の測定結果(サンプル数3個の平均値)を表6に示す。
Claims (6)
- π共役系高分子をイオン液体と接触処理させてなることを特徴とする導電材料。
- 前記導電材料の伝導度がイオン液体と接触処理させる前のπ共役系高分子の伝導度の10倍以上であることを特徴とする請求項1に記載の導電材料。
- π共役系高分子膜をイオン液体と接触処理させてなることを特徴とする導電膜。
- 前記導電膜のシート抵抗がイオン液体と接触処理させる前のπ共役系高分子膜のシート抵抗の0.1倍以下であることを特徴とする請求項3に記載の導電膜。
- π共役系高分子をイオン液体と接触処理させることを特徴とする導電材料の製造方法。
- π共役系高分子膜をイオン液体と接触処理させることを特徴とする導電膜の製造方法。
Priority Applications (9)
Application Number | Priority Date | Filing Date | Title |
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JP2005129511A JP5052760B2 (ja) | 2005-04-27 | 2005-04-27 | 導電材料の製造方法 |
KR1020077024636A KR20080009697A (ko) | 2005-04-27 | 2006-04-05 | 도전 재료 및 도전막 및 그 제조방법 |
AU2006243103A AU2006243103B2 (en) | 2005-04-27 | 2006-04-05 | Conductive material and conductive film and process for producing them |
US11/910,571 US7842197B2 (en) | 2005-04-27 | 2006-04-05 | Conductive material, conductive film, and production method thereof |
EP06731190A EP1876607A4 (en) | 2005-04-27 | 2006-04-05 | CONDUCTIVE MATERIAL AND CONDUCTIVE FILM AND MANUFACTURING PROCESS THEREFOR |
PCT/JP2006/307242 WO2006117967A1 (ja) | 2005-04-27 | 2006-04-05 | 導電材料および導電膜ならびにそれらの製造方法 |
CN2006800137402A CN101164122B (zh) | 2005-04-27 | 2006-04-05 | 导电材料、导电膜及它们的制造方法 |
TW095114193A TWI328234B (en) | 2005-04-27 | 2006-04-20 | Conductive material and conductive film, and method for manufacturing the same |
US12/860,577 US20100317806A1 (en) | 2005-04-27 | 2010-08-20 | Conductive material, conductive film, and production method thereof |
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EP (1) | EP1876607A4 (ja) |
JP (1) | JP5052760B2 (ja) |
KR (1) | KR20080009697A (ja) |
CN (1) | CN101164122B (ja) |
AU (1) | AU2006243103B2 (ja) |
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- 2006-04-05 CN CN2006800137402A patent/CN101164122B/zh not_active Expired - Fee Related
- 2006-04-05 WO PCT/JP2006/307242 patent/WO2006117967A1/ja active Application Filing
- 2006-04-05 EP EP06731190A patent/EP1876607A4/en not_active Withdrawn
- 2006-04-05 KR KR1020077024636A patent/KR20080009697A/ko not_active Application Discontinuation
- 2006-04-05 AU AU2006243103A patent/AU2006243103B2/en not_active Ceased
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JPWO2017085939A1 (ja) * | 2015-11-17 | 2018-08-30 | 株式会社アロマビット | 匂いセンサおよび匂い測定システム |
US11073491B2 (en) | 2015-11-17 | 2021-07-27 | Aroma Bit, Inc. | Odor sensor and odor measurement system |
CN113655092A (zh) * | 2015-11-17 | 2021-11-16 | 株式会社而摩比特 | 气味传感器及气味测定系统 |
US11796497B2 (en) | 2015-11-17 | 2023-10-24 | Aroma Bit, Inc. | Odor sensor and odor measurement system |
KR20220153796A (ko) * | 2021-05-12 | 2022-11-21 | 이화여자대학교 산학협력단 | 개질된 전도성 고분자를 포함하는 신축성 전극 및 이를 포함하는 센서 |
KR102593821B1 (ko) | 2021-05-12 | 2023-10-26 | 이화여자대학교 산학협력단 | 개질된 전도성 고분자를 포함하는 신축성 전극 및 이를 포함하는 센서 |
Also Published As
Publication number | Publication date |
---|---|
US20100317806A1 (en) | 2010-12-16 |
TWI328234B (en) | 2010-08-01 |
US7842197B2 (en) | 2010-11-30 |
TW200707464A (en) | 2007-02-16 |
AU2006243103A1 (en) | 2006-11-09 |
EP1876607A4 (en) | 2009-07-15 |
JP5052760B2 (ja) | 2012-10-17 |
US20090152503A1 (en) | 2009-06-18 |
CN101164122A (zh) | 2008-04-16 |
AU2006243103B2 (en) | 2011-07-07 |
CN101164122B (zh) | 2011-10-26 |
EP1876607A1 (en) | 2008-01-09 |
KR20080009697A (ko) | 2008-01-29 |
WO2006117967A1 (ja) | 2006-11-09 |
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