JP2006293361A5 - - Google Patents

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Publication number
JP2006293361A5
JP2006293361A5 JP2006105007A JP2006105007A JP2006293361A5 JP 2006293361 A5 JP2006293361 A5 JP 2006293361A5 JP 2006105007 A JP2006105007 A JP 2006105007A JP 2006105007 A JP2006105007 A JP 2006105007A JP 2006293361 A5 JP2006293361 A5 JP 2006293361A5
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JP
Japan
Prior art keywords
directing
chromium
compound
quartz substrate
electron beam
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JP2006105007A
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English (en)
Japanese (ja)
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JP4857010B2 (ja
JP2006293361A (ja
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Priority claimed from US11/102,602 external-priority patent/US7670956B2/en
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Publication of JP2006293361A5 publication Critical patent/JP2006293361A5/ja
Application granted granted Critical
Publication of JP4857010B2 publication Critical patent/JP4857010B2/ja
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JP2006105007A 2005-04-08 2006-04-06 ビーム誘起エッチング Active JP4857010B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/102,602 US7670956B2 (en) 2005-04-08 2005-04-08 Beam-induced etching
US11/102,602 2005-04-08

Publications (3)

Publication Number Publication Date
JP2006293361A JP2006293361A (ja) 2006-10-26
JP2006293361A5 true JP2006293361A5 (cg-RX-API-DMAC7.html) 2009-05-21
JP4857010B2 JP4857010B2 (ja) 2012-01-18

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ID=36675948

Family Applications (1)

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JP2006105007A Active JP4857010B2 (ja) 2005-04-08 2006-04-06 ビーム誘起エッチング

Country Status (3)

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US (2) US7670956B2 (cg-RX-API-DMAC7.html)
EP (1) EP1710327B1 (cg-RX-API-DMAC7.html)
JP (1) JP4857010B2 (cg-RX-API-DMAC7.html)

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EP2787523B1 (en) 2013-04-03 2016-02-10 Fei Company Low energy ion milling or deposition
US9064811B2 (en) 2013-05-28 2015-06-23 Fei Company Precursor for planar deprocessing of semiconductor devices using a focused ion beam
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JP6703903B2 (ja) * 2016-06-16 2020-06-03 株式会社日立製作所 微細構造体の加工方法および微細構造体の加工装置
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CN110923624B (zh) * 2019-12-13 2020-11-24 北京师范大学 一种基于离子束印刷系统的离子束印刷方法
DE102021206564A1 (de) * 2021-06-24 2022-12-29 Carl Zeiss Smt Gmbh Endpunktbestimmung durch induzierte desorption von gasen und analyse der wiederbedeckung
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