JP2006289605A5 - - Google Patents

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Publication number
JP2006289605A5
JP2006289605A5 JP2006109276A JP2006109276A JP2006289605A5 JP 2006289605 A5 JP2006289605 A5 JP 2006289605A5 JP 2006109276 A JP2006109276 A JP 2006109276A JP 2006109276 A JP2006109276 A JP 2006109276A JP 2006289605 A5 JP2006289605 A5 JP 2006289605A5
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JP
Japan
Prior art keywords
polishing
radial
sectional area
average cross
annular
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JP2006109276A
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English (en)
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JP2006289605A (ja
JP5089073B2 (ja
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Publication of JP2006289605A publication Critical patent/JP2006289605A/ja
Publication of JP2006289605A5 publication Critical patent/JP2006289605A5/ja
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Publication of JP5089073B2 publication Critical patent/JP5089073B2/ja
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Claims (4)

  1. a)回転中心を有し、前記回転中心と同心であり、ある幅を有する環状研磨トラックを含む研磨層であって、前記環状研磨トラックの幅が半径方向の溝を含むものであり、前記半径方向の溝が、ある平均断面積を有するものである研磨層、及び
    b)前記研磨層中の、前記環状研磨トラックの幅の範囲内にある複数の半径方向のミクロチャネルであって、前記半径方向の溝の平均断面積の10分の1以下である平均断面積を有し、大多数が主として半径方向の向きを有する半径方向のミクロチャネル
    を含む、磁性基材、光学基材及び半導体基材の少なくとも一つを研磨するのに有用な研磨パッド。
  2. 前記半径方向のミクロチャネルの大多数が前記半径方向の溝と交差しない、請求項記載の研磨パッド。
  3. 前記研磨層がカーブした半径方向の溝を含み、前記半径方向のミクロチャネルがカーブした半径方向のミクロチャネルを含む、請求項記載の研磨パッド。
  4. 前記研磨層が、少なくとも15,000μm2の平均断面積を有する溝を前記環状研磨トラック内に含まない、請求項1記載の研磨パッド。
JP2006109276A 2005-04-12 2006-04-12 半径方向の偏った研磨パッド Active JP5089073B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US67046605P 2005-04-12 2005-04-12
US60/670,466 2005-04-12

Publications (3)

Publication Number Publication Date
JP2006289605A JP2006289605A (ja) 2006-10-26
JP2006289605A5 true JP2006289605A5 (ja) 2009-05-07
JP5089073B2 JP5089073B2 (ja) 2012-12-05

Family

ID=37054983

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2006109276A Active JP5089073B2 (ja) 2005-04-12 2006-04-12 半径方向の偏った研磨パッド

Country Status (7)

Country Link
US (1) US7255633B2 (ja)
JP (1) JP5089073B2 (ja)
KR (1) KR101279819B1 (ja)
CN (1) CN100515685C (ja)
DE (1) DE102006016312B4 (ja)
FR (1) FR2884164B1 (ja)
TW (1) TWI372093B (ja)

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US20140054266A1 (en) * 2012-08-24 2014-02-27 Wiechang Jin Compositions and methods for selective polishing of platinum and ruthenium materials
US9522454B2 (en) * 2012-12-17 2016-12-20 Seagate Technology Llc Method of patterning a lapping plate, and patterned lapping plates
KR20170096025A (ko) * 2014-12-22 2017-08-23 쓰리엠 이노베이티브 프로퍼티즈 컴파니 제거 가능한 연마 부재를 갖는 연마 용품 및 이들의 분리 및 교체 방법
US10875146B2 (en) * 2016-03-24 2020-12-29 Rohm And Haas Electronic Materials Cmp Holdings Debris-removal groove for CMP polishing pad
CN108883515A (zh) * 2016-03-24 2018-11-23 应用材料公司 用于化学机械抛光的纹理化的小垫
US10625393B2 (en) 2017-06-08 2020-04-21 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Chemical mechanical polishing pads having offset circumferential grooves for improved removal rate and polishing uniformity
US10857648B2 (en) 2017-06-14 2020-12-08 Rohm And Haas Electronic Materials Cmp Holdings Trapezoidal CMP groove pattern
US10586708B2 (en) 2017-06-14 2020-03-10 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Uniform CMP polishing method
US10777418B2 (en) 2017-06-14 2020-09-15 Rohm And Haas Electronic Materials Cmp Holdings, I Biased pulse CMP groove pattern
US10857647B2 (en) 2017-06-14 2020-12-08 Rohm And Haas Electronic Materials Cmp Holdings High-rate CMP polishing method
US10861702B2 (en) 2017-06-14 2020-12-08 Rohm And Haas Electronic Materials Cmp Holdings Controlled residence CMP polishing method
US10654146B2 (en) 2018-01-23 2020-05-19 Seagate Technology Llc One or more charging members used in the manufacture of a lapping plate, and related apparatuses and methods of making
CN110039380B (zh) * 2019-04-11 2020-12-01 上海理工大学 一种用于周期性微沟槽结构抛光的磁性复合流体抛光装置
CN112720282B (zh) * 2020-12-31 2022-04-08 湖北鼎汇微电子材料有限公司 一种抛光垫
EP4382250A1 (en) * 2021-08-04 2024-06-12 Kuraray Co., Ltd. Polishing pad
CN114770371B (zh) * 2022-03-10 2023-08-25 宁波赢伟泰科新材料有限公司 一种高抛光液使用效率的抛光垫
CN114918824A (zh) * 2022-06-29 2022-08-19 万华化学集团电子材料有限公司 一种具有径向微沟槽的抛光垫
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