JP2006289605A5 - - Google Patents
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- Publication number
- JP2006289605A5 JP2006289605A5 JP2006109276A JP2006109276A JP2006289605A5 JP 2006289605 A5 JP2006289605 A5 JP 2006289605A5 JP 2006109276 A JP2006109276 A JP 2006109276A JP 2006109276 A JP2006109276 A JP 2006109276A JP 2006289605 A5 JP2006289605 A5 JP 2006289605A5
- Authority
- JP
- Japan
- Prior art keywords
- polishing
- radial
- sectional area
- average cross
- annular
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000005498 polishing Methods 0.000 claims 14
- 239000000463 material Substances 0.000 claims 1
- 230000003287 optical Effects 0.000 claims 1
- 239000004065 semiconductor Substances 0.000 claims 1
- 239000000758 substrate Substances 0.000 claims 1
Claims (4)
- a)回転中心を有し、前記回転中心と同心であり、ある幅を有する環状研磨トラックを含む研磨層であって、前記環状研磨トラックの幅が半径方向の溝を含むものであり、前記半径方向の溝が、ある平均断面積を有するものである研磨層、及び
b)前記研磨層中の、前記環状研磨トラックの幅の範囲内にある複数の半径方向のミクロチャネルであって、前記半径方向の溝の平均断面積の10分の1以下である平均断面積を有し、大多数が主として半径方向の向きを有する半径方向のミクロチャネル
を含む、磁性基材、光学基材及び半導体基材の少なくとも一つを研磨するのに有用な研磨パッド。 - 前記半径方向のミクロチャネルの大多数が前記半径方向の溝と交差しない、請求項1記載の研磨パッド。
- 前記研磨層がカーブした半径方向の溝を含み、前記半径方向のミクロチャネルがカーブした半径方向のミクロチャネルを含む、請求項1記載の研磨パッド。
- 前記研磨層が、少なくとも15,000μm2の平均断面積を有する溝を前記環状研磨トラック内に含まない、請求項1記載の研磨パッド。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US67046605P | 2005-04-12 | 2005-04-12 | |
US60/670,466 | 2005-04-12 |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2006289605A JP2006289605A (ja) | 2006-10-26 |
JP2006289605A5 true JP2006289605A5 (ja) | 2009-05-07 |
JP5089073B2 JP5089073B2 (ja) | 2012-12-05 |
Family
ID=37054983
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2006109276A Active JP5089073B2 (ja) | 2005-04-12 | 2006-04-12 | 半径方向の偏った研磨パッド |
Country Status (7)
Country | Link |
---|---|
US (1) | US7255633B2 (ja) |
JP (1) | JP5089073B2 (ja) |
KR (1) | KR101279819B1 (ja) |
CN (1) | CN100515685C (ja) |
DE (1) | DE102006016312B4 (ja) |
FR (1) | FR2884164B1 (ja) |
TW (1) | TWI372093B (ja) |
Families Citing this family (32)
Publication number | Priority date | Publication date | Assignee | Title |
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US20020068516A1 (en) * | 1999-12-13 | 2002-06-06 | Applied Materials, Inc | Apparatus and method for controlled delivery of slurry to a region of a polishing device |
JP2008062367A (ja) * | 2006-09-11 | 2008-03-21 | Nec Electronics Corp | 研磨装置、研磨パッド、研磨方法 |
TWI455795B (zh) * | 2007-10-18 | 2014-10-11 | Iv Technologies Co Ltd | 研磨墊及研磨方法 |
US7927092B2 (en) * | 2007-12-31 | 2011-04-19 | Corning Incorporated | Apparatus for forming a slurry polishing pad |
US9180570B2 (en) | 2008-03-14 | 2015-11-10 | Nexplanar Corporation | Grooved CMP pad |
US9117870B2 (en) * | 2008-03-27 | 2015-08-25 | Lam Research Corporation | High throughput cleaner chamber |
CN102026775A (zh) * | 2008-05-16 | 2011-04-20 | 东丽株式会社 | 研磨垫 |
TWI449597B (zh) * | 2008-07-09 | 2014-08-21 | Iv Technologies Co Ltd | 研磨墊及其製造方法 |
TWI535527B (zh) * | 2009-07-20 | 2016-06-01 | 智勝科技股份有限公司 | 研磨方法、研磨墊與研磨系統 |
JP5544124B2 (ja) * | 2009-08-18 | 2014-07-09 | 富士紡ホールディングス株式会社 | 研磨パッド |
US8562272B2 (en) * | 2010-02-16 | 2013-10-22 | Lam Research Corporation | Substrate load and unload mechanisms for high throughput |
US8893642B2 (en) | 2010-03-24 | 2014-11-25 | Lam Research Corporation | Airflow management for low particulate count in a process tool |
US8282698B2 (en) * | 2010-03-24 | 2012-10-09 | Lam Research Corporation | Reduction of particle contamination produced by moving mechanisms in a process tool |
JP5839163B2 (ja) * | 2010-07-12 | 2016-01-06 | Jsr株式会社 | 化学機械研磨パッドおよび化学機械研磨方法 |
US20140054266A1 (en) * | 2012-08-24 | 2014-02-27 | Wiechang Jin | Compositions and methods for selective polishing of platinum and ruthenium materials |
US9522454B2 (en) * | 2012-12-17 | 2016-12-20 | Seagate Technology Llc | Method of patterning a lapping plate, and patterned lapping plates |
KR20170096025A (ko) * | 2014-12-22 | 2017-08-23 | 쓰리엠 이노베이티브 프로퍼티즈 컴파니 | 제거 가능한 연마 부재를 갖는 연마 용품 및 이들의 분리 및 교체 방법 |
US10875146B2 (en) * | 2016-03-24 | 2020-12-29 | Rohm And Haas Electronic Materials Cmp Holdings | Debris-removal groove for CMP polishing pad |
CN108883515A (zh) * | 2016-03-24 | 2018-11-23 | 应用材料公司 | 用于化学机械抛光的纹理化的小垫 |
US10625393B2 (en) | 2017-06-08 | 2020-04-21 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Chemical mechanical polishing pads having offset circumferential grooves for improved removal rate and polishing uniformity |
US10857648B2 (en) | 2017-06-14 | 2020-12-08 | Rohm And Haas Electronic Materials Cmp Holdings | Trapezoidal CMP groove pattern |
US10586708B2 (en) | 2017-06-14 | 2020-03-10 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Uniform CMP polishing method |
US10777418B2 (en) | 2017-06-14 | 2020-09-15 | Rohm And Haas Electronic Materials Cmp Holdings, I | Biased pulse CMP groove pattern |
US10857647B2 (en) | 2017-06-14 | 2020-12-08 | Rohm And Haas Electronic Materials Cmp Holdings | High-rate CMP polishing method |
US10861702B2 (en) | 2017-06-14 | 2020-12-08 | Rohm And Haas Electronic Materials Cmp Holdings | Controlled residence CMP polishing method |
US10654146B2 (en) | 2018-01-23 | 2020-05-19 | Seagate Technology Llc | One or more charging members used in the manufacture of a lapping plate, and related apparatuses and methods of making |
CN110039380B (zh) * | 2019-04-11 | 2020-12-01 | 上海理工大学 | 一种用于周期性微沟槽结构抛光的磁性复合流体抛光装置 |
CN112720282B (zh) * | 2020-12-31 | 2022-04-08 | 湖北鼎汇微电子材料有限公司 | 一种抛光垫 |
EP4382250A1 (en) * | 2021-08-04 | 2024-06-12 | Kuraray Co., Ltd. | Polishing pad |
CN114770371B (zh) * | 2022-03-10 | 2023-08-25 | 宁波赢伟泰科新材料有限公司 | 一种高抛光液使用效率的抛光垫 |
CN114918824A (zh) * | 2022-06-29 | 2022-08-19 | 万华化学集团电子材料有限公司 | 一种具有径向微沟槽的抛光垫 |
US20240139906A1 (en) * | 2022-10-27 | 2024-05-02 | Applied Materials, Inc. | Control of carrier head sweep and platen shape |
Family Cites Families (24)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5081051A (en) | 1990-09-12 | 1992-01-14 | Intel Corporation | Method for conditioning the surface of a polishing pad |
US5216843A (en) | 1992-09-24 | 1993-06-08 | Intel Corporation | Polishing pad conditioning apparatus for wafer planarization process |
US5456627A (en) | 1993-12-20 | 1995-10-10 | Westech Systems, Inc. | Conditioner for a polishing pad and method therefor |
US5785585A (en) | 1995-09-18 | 1998-07-28 | International Business Machines Corporation | Polish pad conditioner with radial compensation |
US5611943A (en) | 1995-09-29 | 1997-03-18 | Intel Corporation | Method and apparatus for conditioning of chemical-mechanical polishing pads |
JP3042593B2 (ja) * | 1995-10-25 | 2000-05-15 | 日本電気株式会社 | 研磨パッド |
US5938507A (en) | 1995-10-27 | 1999-08-17 | Applied Materials, Inc. | Linear conditioner apparatus for a chemical mechanical polishing system |
US5645469A (en) | 1996-09-06 | 1997-07-08 | Advanced Micro Devices, Inc. | Polishing pad with radially extending tapered channels |
US5885147A (en) | 1997-05-12 | 1999-03-23 | Integrated Process Equipment Corp. | Apparatus for conditioning polishing pads |
US5916010A (en) | 1997-10-30 | 1999-06-29 | International Business Machines Corporation | CMP pad maintenance apparatus and method |
US6027659A (en) | 1997-12-03 | 2000-02-22 | Intel Corporation | Polishing pad conditioning surface having integral conditioning points |
JP2001001253A (ja) * | 1999-06-21 | 2001-01-09 | Toray Ind Inc | 研磨布 |
US6306008B1 (en) | 1999-08-31 | 2001-10-23 | Micron Technology, Inc. | Apparatus and method for conditioning and monitoring media used for chemical-mechanical planarization |
US6626743B1 (en) | 2000-03-31 | 2003-09-30 | Lam Research Corporation | Method and apparatus for conditioning a polishing pad |
JP2003535462A (ja) | 2000-05-31 | 2003-11-25 | コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ | 半導体及び集積回路を製造するための研磨方法及び装置 |
JP2002100592A (ja) * | 2000-09-20 | 2002-04-05 | Rodel Nitta Co | 研磨パッド |
US6767427B2 (en) | 2001-06-07 | 2004-07-27 | Lam Research Corporation | Apparatus and method for conditioning polishing pad in a chemical mechanical planarization process |
JP2003145413A (ja) * | 2001-10-31 | 2003-05-20 | Applied Materials Inc | 研磨パッド |
JP2003303793A (ja) * | 2002-04-12 | 2003-10-24 | Hitachi Ltd | 研磨装置および半導体装置の製造方法 |
JP2004167605A (ja) * | 2002-11-15 | 2004-06-17 | Rodel Nitta Co | 研磨パッドおよび研磨装置 |
US6976907B2 (en) | 2003-01-10 | 2005-12-20 | Intel Corporation | Polishing pad conditioning |
JPWO2005023487A1 (ja) * | 2003-08-29 | 2007-10-04 | 東邦エンジニアリング株式会社 | 研磨パッドおよびその製造方法と製造装置 |
US7591713B2 (en) * | 2003-09-26 | 2009-09-22 | Shin-Etsu Handotai Co., Ltd. | Polishing pad, method for processing polishing pad, and method for producing substrate using it |
US6843711B1 (en) * | 2003-12-11 | 2005-01-18 | Rohm And Haas Electronic Materials Cmp Holdings, Inc | Chemical mechanical polishing pad having a process-dependent groove configuration |
-
2006
- 2006-03-17 KR KR1020060025061A patent/KR101279819B1/ko active IP Right Grant
- 2006-03-29 US US11/392,373 patent/US7255633B2/en active Active
- 2006-04-06 DE DE102006016312.5A patent/DE102006016312B4/de not_active Expired - Fee Related
- 2006-04-10 TW TW095112634A patent/TWI372093B/zh active
- 2006-04-11 FR FR0651303A patent/FR2884164B1/fr not_active Expired - Fee Related
- 2006-04-11 CN CNB2006100747763A patent/CN100515685C/zh not_active Expired - Fee Related
- 2006-04-12 JP JP2006109276A patent/JP5089073B2/ja active Active
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