JP2006287233A5 - - Google Patents
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- Publication number
- JP2006287233A5 JP2006287233A5 JP2006102013A JP2006102013A JP2006287233A5 JP 2006287233 A5 JP2006287233 A5 JP 2006287233A5 JP 2006102013 A JP2006102013 A JP 2006102013A JP 2006102013 A JP2006102013 A JP 2006102013A JP 2006287233 A5 JP2006287233 A5 JP 2006287233A5
- Authority
- JP
- Japan
- Prior art keywords
- film
- semiconductor device
- metal
- barrier film
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 claims 23
- 239000002184 metal Substances 0.000 claims 10
- 238000009792 diffusion process Methods 0.000 claims 7
- 239000000758 substrate Substances 0.000 claims 7
- 239000000463 material Substances 0.000 claims 3
- 239000003870 refractory metal Substances 0.000 claims 3
- 229910021332 silicide Inorganic materials 0.000 claims 2
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 claims 2
- 229910052710 silicon Inorganic materials 0.000 claims 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims 1
- 229910021417 amorphous silicon Inorganic materials 0.000 claims 1
- 229910052732 germanium Inorganic materials 0.000 claims 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims 1
- 229920005591 polysilicon Polymers 0.000 claims 1
- 239000002210 silicon-based material Substances 0.000 claims 1
Applications Claiming Priority (6)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR10-2005-0028245 | 2005-04-04 | ||
| KR20050028245 | 2005-04-04 | ||
| US11/214,680 US7501673B2 (en) | 2005-04-04 | 2005-08-29 | Semiconductor device multilayer structure, fabrication method for the same, semiconductor device having the same, and semiconductor device fabrication method |
| US11/214,680 | 2005-08-29 | ||
| KR10-2005-0134428 | 2005-12-29 | ||
| KR1020050134428A KR100725369B1 (ko) | 2005-04-04 | 2005-12-29 | 다층 게이트 구조를 구비하는 반도체 소자 및 그 제조 방법 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2006287233A JP2006287233A (ja) | 2006-10-19 |
| JP2006287233A5 true JP2006287233A5 (zh) | 2009-05-21 |
| JP5063913B2 JP5063913B2 (ja) | 2012-10-31 |
Family
ID=37408723
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2006102013A Active JP5063913B2 (ja) | 2005-04-04 | 2006-04-03 | 多層ゲート構造を備える半導体素子及びそれの製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP5063913B2 (zh) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4690120B2 (ja) * | 2005-06-21 | 2011-06-01 | エルピーダメモリ株式会社 | 半導体装置及びその製造方法 |
| US7781333B2 (en) * | 2006-12-27 | 2010-08-24 | Hynix Semiconductor Inc. | Semiconductor device with gate structure and method for fabricating the semiconductor device |
| KR20130116099A (ko) * | 2012-04-13 | 2013-10-23 | 삼성전자주식회사 | 반도체 장치 및 그 제조 방법 |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0831931A (ja) * | 1994-07-11 | 1996-02-02 | Nippon Telegr & Teleph Corp <Ntt> | 半導体装置およびその製造方法 |
| JP3892588B2 (ja) * | 1997-12-26 | 2007-03-14 | 株式会社東芝 | 半導体装置およびその製造方法 |
| JPH11297988A (ja) * | 1998-04-01 | 1999-10-29 | Nanya Sci & Technol Co Ltd | 金属シリサイドのスパイキング効果を防止するゲート電極製造方法 |
| JP2002373944A (ja) * | 2001-06-15 | 2002-12-26 | Hitachi Ltd | 半導体集積回路装置およびその製造方法 |
| JP3781666B2 (ja) * | 2001-11-29 | 2006-05-31 | エルピーダメモリ株式会社 | ゲート電極の形成方法及びゲート電極構造 |
| US6902993B2 (en) * | 2003-03-28 | 2005-06-07 | Cypress Semiconductor Corporation | Gate electrode for MOS transistors |
| JP2004319722A (ja) * | 2003-04-16 | 2004-11-11 | Hitachi Ltd | 半導体集積回路装置およびその製造方法 |
-
2006
- 2006-04-03 JP JP2006102013A patent/JP5063913B2/ja active Active
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