JP2006287233A5 - - Google Patents

Claims (13)

Semiconductor substrate;
A doped conductive film on the semiconductor substrate;
A diffusion barrier film comprising an amorphous semiconductor material on the doped conductive film;
An ohmic contact film on the diffusion barrier film;
A metal barrier film on the ohmic contact film; and a metal film on the metal barrier film;
A semiconductor device comprising:   The semiconductor device according to claim 1, wherein the doped conductive film includes doped polysilicon. The amorphous semiconductor material, the semiconductor device according to claim 1 or 2, characterized in that it comprises Si, Ge and GaAs. The ohmic contact layer, a semiconductor device according to any one of claims 1 to 3, characterized in that it comprises a refractory metal silicide.   The semiconductor device according to claim 4, wherein the refractory metal silicide contains W and Si. The metal film semiconductor device according to any one of claims 1 to 5, characterized in that it comprises a refractory metal. The diffusion thickness of the barrier film, the semiconductor device according to any one of claims 1 to 6, characterized in that at least 30 Å. Semiconductor substrate;
A source / drain region of a first conductivity type formed in the semiconductor substrate;
A gate insulating film formed on a channel region between the source / drain regions; a doped conductive film on the gate insulating film; a diffusion barrier film comprising an amorphous silicon material on the doped conductive film A multi-layer gate electrode including an ohmic contact film on the diffusion barrier film, a metal barrier film on the ohmic contact film, and a metal film on the metal barrier film;
A semiconductor device comprising: 9. The semiconductor device according to claim 8 , wherein the first conductivity type is a P type. 10. The semiconductor according to claim 8 , wherein a recess channel trench is formed in the semiconductor substrate below the gate electrode, and the gate insulating film is formed along an inner surface of the recess channel trench. element. A source / drain region of a second conductivity type formed in the semiconductor substrate;
A second gate insulating film formed on a channel region between the source / drain regions of the second conductivity type; and a doped conductive film formed on the second gate insulating film, the doped A second multilayer including a diffusion barrier film containing an amorphous semiconductor material on the conductive film, an ohmic contact film on the diffusion barrier film, a metal barrier film on the ohmic contact film, and a metal film on the metal barrier film Gate electrode;
The semiconductor device according to claim 8 , further comprising: The semiconductor element according to claim 11 , wherein the second conductivity type is an n-type. The recess channel trench is formed in the semiconductor substrate below the second multilayer gate electrode, and the second gate insulating film is formed along the inner surface of the recess channel trench. The semiconductor element according to 11 or 12 .