JP2006286701A - Semiconductor light emitting device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a semiconductor light emitting device which is compact and efficient and has a superior life characteristic by increasing a joint area between a first resin member and a second resin member to enhance the adhesion between them, thereby improving the reliability, and by expanding an irradiation area on a phosphor. <P>SOLUTION: The semiconductor light emitting device comprises a semiconductor light emitting element 8 mounted on a mount member and a sealing resin member for covering the semiconductor light emitting element 8. The sealing resin member includes at least the first resin member 4 for covering the semiconductor light emitting element 8, and the second resin member 5 containing a wavelength conversion member which absorbs light emitted from the semiconductor light emitting element 8 and converts the light into one having a different wavelength. The surfaces of the first resin member 4 and the second resin member 5 on the interface are concavo-convex surfaces 4a and 5a. <P>COPYRIGHT: (C)2007,JPO&INPIT

Description

  The present invention relates to a semiconductor light emitting device using a semiconductor light emitting element such as a light emitting diode or a laser diode, and more particularly to a compact semiconductor light emitting device having high light output and high reliability.

In general, a semiconductor light-emitting device has a high refractive index of the semiconductor light-emitting element, and when the semiconductor light-emitting element is in contact with the atmosphere, light is reflected from the inside of the semiconductor light-emitting element due to interface reflection caused by a difference in refractive index between the semiconductor light-emitting element and the atmosphere. Therefore, it is necessary to seal the semiconductor light emitting element with a transparent resin having a higher refractive index than the atmosphere such as epoxy, that is, a refractive index close to that of the semiconductor light emitting element.
On the other hand, since the light emission of the semiconductor light emitting element has a monochromatic peak wavelength, in order to obtain white light that requires light emission in a wide wavelength range or light having a wavelength different from that of the light emission of the semiconductor light emitting element, the wavelength of a phosphor or the like It is necessary to convert the wavelength of light emitted from the semiconductor light emitting element by the conversion material.
In view of this, a technique has been studied in which a phosphor is contained in a transparent sealing resin for sealing a semiconductor light emitting element to perform color conversion.

  For example, in a conventional light emitting diode and a display device using the same, a first coating portion on the LED chip and a fluorescent material that emits visible light by being excited by visible light from the LED chip on the first coating portion. And a second coating portion included (see, for example, Patent Document 1).

Japanese Patent No. 3065263 (paragraphs 0011 to 0016, FIG. 2)

  Generally, semiconductor light emitting devices that excite phosphors emit light having a short wavelength that provides higher excitation energy. In devices using conventional semiconductor light emitting devices, short wavelengths emitted from semiconductor light emitting devices are used. Light passes through the transparent resin and reaches the phosphor, is converted into visible light and emitted into the atmosphere, but some of the light that reaches the phosphor is reflected to the semiconductor light emitting element side without wavelength conversion In addition, it is considered that multiple reflection occurs between the semiconductor light emitting element and the phosphor, the sealing resin between the semiconductor light emitting element and the phosphor is deteriorated by light, and the life is shortened. Heat generated from the semiconductor light emitting element has also been considered as a cause of accelerating the deterioration of the sealing resin.

In order to cope with this, a transparent resin layer is disposed as the first resin between the semiconductor light emitting device and the phosphor mixed in the second resin, and the semiconductor light emitting device and the phosphor are provided with a distance therebetween. A method of reducing local deterioration due to multiple reflection between the light emitting element and the phosphor is considered.
However, when the second resin is cured after the first resin is cured, both materials are selected unless a material is selected so that a chemical bond is generated between the first resin and the second resin. The adhesive force between the resins depends only on van der Waals force (intermolecular force) generated on the adhesive surface.
Therefore, even when the first resin and the second resin are in close contact with each other, so-called “wetting” is in a good state, if the contact area per unit volume between the first resin and the second resin is small, it is sufficient. Interface stress generated when using resins with different coefficients of thermal expansion and mechanical stress generated in the manufacturing process of the semiconductor light emitting device, the first resin and the second resin By adding to the resin interface, there arises a problem that the interface between the first resin and the second resin peels off.

  And when peeling occurs between the first resin and the second resin, an interface between the first resin and the air layer and an interface between the air layer and the second resin are generated at the peeled interface, both of them. In this case, the interface reflection occurs, so that it is difficult for the light generated from the semiconductor light emitting element to reach the second resin, and the excitation light of the phosphor contained in the second resin is reduced, resulting in a decrease in the luminous flux as a result. In addition, the ratio of multiple reflection of light from the semiconductor light-emitting element in the first resin increases, leading to deterioration of the first resin, resulting in a short life.

  In recent years, the performance of semiconductor light emitting devices has improved and the amount of light output from semiconductor light emitting devices has increased significantly due to the increase in device size. The amount is increasing. Although the density of the excitation light at the current level is not a big problem, it can be easily predicted that the density of the excitation light will further increase in the future, and in that case, there is a possibility of reaching a region where the luminance saturation phenomenon occurs. For this reason, a technique for reducing the load on the phosphor is required by expanding the irradiation area of the phosphor layer so that the density of the excitation light is reduced and the saturation phenomenon does not occur.

  Here, the luminance saturation phenomenon refers to a phenomenon in which excitation light density vs. luminance characteristics are nonlinear, and saturation does not increase in proportion to an increase in excitation light density. Further, among phosphors used for semiconductor light emitting device applications, there are those that cause luminance degradation due to excitation light, for example, ZnS, Cu, Au, etc., and when these phosphors are used, the density is high. When the excitation light is irradiated, deterioration of the phosphor is accelerated, that is, there is a problem that the luminous efficiency of the phosphor is sharply reduced, and the lifetime of the semiconductor light emitting device is shortened.

  The present invention has been made to solve the above-mentioned problems. The bonding area between the first resin and the second resin is increased, the reliability is improved by increasing the adhesive force, and the phosphor is applied to the phosphor. The object is to obtain a semiconductor light emitting device with a wide irradiation area, compact and efficient, and excellent lifetime characteristics.

  A semiconductor light-emitting device according to the present invention includes a semiconductor light-emitting element mounted on a mounting member and a sealing resin member that covers the semiconductor light-emitting element, wherein the sealing resin member includes at least the semiconductor A first resin member that covers the light emitting element; and a second resin member that contains a wavelength conversion material that absorbs light emitted from the semiconductor light emitting element and converts it into light of a different wavelength. The interface between the resin member and the second resin member is an uneven surface.

  The present invention includes a sealing resin member that covers a semiconductor light emitting element, and the sealing resin member absorbs at least a first resin member that covers the semiconductor light emitting element and light emitted from the semiconductor light emitting element. And a second resin member containing a wavelength conversion material that converts light of different wavelengths, and the interface between the first resin member and the second resin member is an uneven surface. To increase the bonding area of the second resin member and improve the adhesive strength, improve the reliability, expand the irradiation area to the phosphor, obtain a compact and efficient semiconductor light emitting device with excellent lifetime characteristics Can do.

Embodiment 1 FIG.
1 is an exploded perspective view of a semiconductor light emitting device showing Embodiment 1 of the present invention, FIG. 2 is a longitudinal sectional view along the axis of symmetry of the semiconductor light emitting device, and FIG. 3 is a perspective view when a second resin member is removed. is there.
1 and 2, the semiconductor light emitting device has an external electrode 2 formed on a package 1 having a recess on the front surface, and is electrically connected to an electrode of a semiconductor light emitting element 8 disposed at the bottom center of the recess. ing. A reflector 7 is provided inside the recess.
In addition, the semiconductor light emitting element 8 is sealed with a first resin member 4 having an opening formed in a concavo-convex shape, on which light emitted from the semiconductor light emitting element 8 is absorbed and converted to light of a different wavelength. A second resin member 5 containing a wavelength conversion material is formed. The light emitting surface 5s of the second resin member 5 is a flat surface.
Thus, the interface between the first resin member 4 and the second resin member 5 forms the uneven surfaces 4a and 5a.

  The semiconductor light emitting device 8 is a gallium nitride compound and emits light having a peak wavelength of about 360 to 410 nm. The gallium nitride compound semiconductor can emit light other than 360 to 410 nm by adjusting the concentration of indium, and can emit blue light having a peak wavelength near 460 nm. A semiconductor light emitting element that emits blue light may be used.

The first resin member 4 is made of a transparent resin such as epoxy, acrylic, polycarbonate, or silicone.
The second resin member 5 is a phosphor slurry in which a red phosphor, a green phosphor, and a blue phosphor are mixed so that the phosphor has a predetermined emission color.

  Next, the uneven surfaces 4 a and 5 a at the interface between the first resin member 4 and the second resin member 5 will be described with reference to FIGS. 1, 4, and 5. FIG. 4 is an explanatory diagram of each axis related to the uneven surface 5a of the second resin member 5, and FIG. 5 is a comparison diagram of light distribution curves by the number of symmetry axes. FIG. 5 (a) shows a case of uniaxial symmetry, and FIG. 5 (b) shows a case of biaxial symmetry. The front and rear views in the case where the concave and convex surface 5a of the second resin member 5 has the same square shape and the respective directions of the X and Y axes. Shows the light distribution curve when viewed from above.

  As shown in FIGS. 1 and 4, the uneven surfaces 4a and 5a are surfaces orthogonal to the central axis Z where the light distribution of primary radiation emitted from the semiconductor light emitting element 8 is maximized. When the light emitting surface 5s of the member 5 is used, the light emitting surface 5s is substantially symmetrical with respect to at least one axis X or Y on the light emitting surface 5s passing through the central point O where the light emitting surface 5s intersects. The center point where the light emitting surface 5s orthogonal to the center axis Z intersects may be in the vicinity of the center point O.

Specifically, for example, as shown in FIG. 4 (a), there are four squares of the concave and convex surface 5a of the second resin member 5 on the left and right with respect to the X axis, and is symmetrical with respect to the X axis. Although the light distribution curve is symmetric, there are four square guesses on the right and five on the left with respect to the Y axis, and the light distribution curve is asymmetric because the Y axis is asymmetric.
On the other hand, as shown in FIG. 4 (b), there are four squares of the concave and convex surface 5a of the second resin member 5 on the left and right with respect to the X axis and the Y axis, respectively with respect to the X axis and the Y axis. Since it is symmetric, the light distribution curve is symmetric with respect to the X-axis and Y-axis directions.

Although FIG. 1 shows an example of a quadrangular pyramid in which the concavo-convex surfaces 4a and 5a are configured by equilateral triangles, a triangular pyramid, a cone, a hemisphere, or the like may be used. FIG. 3 shows the shape in the case of axial symmetry with respect to an arbitrary axis (point symmetry with respect to the center point O), and the uneven surface 4a of the first resin member 4 is a cone centered on the central axis Z. The surface and its periphery are formed by a plurality of frustoconical surfaces.
Further, the depth of the uneven surfaces 4a and 5a needs to be at least equal to the particle diameter of the phosphor to be used.

Next, a method for selecting and forming a material for the semiconductor light emitting device will be described.
First, although a semiconductor light emitting element connection method is not illustrated, when a face-up type element is used, the semiconductor light emitting element 8 is bonded and cured with a die bond material mainly composed of an epoxy resin and the like, and an Au wire is used. Thus, the external electrode 2 and the semiconductor light emitting element 8 are electrically connected.
When a flip chip type device is used, bumps are formed on the electrode of the package 1 or the electrode of the semiconductor light emitting device 8 and the external electrode 2 and the electrode of the semiconductor light emitting device 8 are connected. Moreover, you may use the package 1 which raised the reflectance by metal vapor deposition, such as silver and aluminum, in the reflector 7 part.

  Next, after the first resin member is introduced into the package so that the opening of the package 1 becomes uneven by the first resin member 4, a mold in which a desired uneven shape is formed is pressed in advance. The semiconductor light emitting element 8 is sealed by a method such as curing. Transparent materials such as epoxy, acrylic, polycarbonate, and silicone can be used as the sealing material, but they are used in the vicinity of the semiconductor light emitting device 8 where the intensity of light emitted from the semiconductor light emitting device 8 is the strongest and the heat generation temperature is high. As the resin to be used, it is preferable to use silicone that has excellent weather resistance and is easy to handle.

In addition, it is important to select a material having a good releasability from the cured resin and perform a smooth surface treatment that does not produce an anchoring effect with the resin as a mold used when forming the uneven portion.
The light emitted from the semiconductor light emitting element 8 electrically connected by the sealing resin is directly emitted from the semiconductor light emitting element 8 to the air layer because the first resin member 4 has a refractive index higher than that of the air layer. Compared with the case where it does, it discharge | releases in the 1st resin member 4 efficiently. It is preferable to select a silicone resin having a high refractive index of about 1.5.

  Here, since a resin having a high refractive index may have a low spectral transmittance, it is necessary to select the resin in consideration of the spectral transmittance and the refractive index at the wavelength of the light emitted from the semiconductor light emitting element 8 to be used. is there.

  Next, the second resin member 5 is formed. In the second resin member 5, a red phosphor, a green phosphor, and a blue phosphor are mixed so that the phosphor has a predetermined emission color. Use slurry. It is desirable to use the same second resin member 5 for the purpose of stress relaxation at the interface due to the difference in thermal expansion between the first resin member 4 and the second resin member 5, and suppression of interface reflection. An appropriate resin may be selected in consideration of the wetting with the first resin member 4 and the wetting with the phosphor. In that case, the amount of excitation light reaching the phosphor is not greatly reduced by reflection occurring at the interface between the first resin member 4 and the second resin member 5, so that the same refractive index as that of the first resin member 4 or near refraction. It is preferable to select a resin having a refractive index, and even when a difference in refractive index occurs, total reflection occurs regardless of the incident angle of light incident on the second resin member 5 from the first resin member 4. Therefore, it is preferable to select a resin having a higher refractive index than the first resin member 4.

  Further, the second resin member 5 has a surface tension so that sufficient wetting can be obtained for the entire region of the concavo-convex surface 4a formed on the first resin member 4, and an optical contact state without voids can be obtained. In the case of a phosphor slurry that has good contact with the phosphor having a suitable contact angle with the first resin member 4 after curing, viscosity of the phosphor slurry, etc., and can uniformly disperse the phosphor A material that satisfies the requirements such as low foaming property is preferable, and it is important to select the material after taking these into consideration.

  Then, the second resin member 5 mixed with the phosphor as described above is applied to the uneven surface 4a of the first resin member 4, and cured by applying heat or the like so that the light emitting surface 5s becomes a flat surface. A second resin member 5 is formed.

As described above, for example, in the case of using the quadrangular pyramid whose side surface is formed of a regular triangle in the uneven shape shown in FIG. 1, the surface area of the phosphor layer in the second resin member 5 is configured as a plane as in the prior art. A surface area approximately 1.7 times that of the case can be realized. Similarly, the surface area can be increased compared to the planar shape even if the irregular shape is a triangular pyramid, a cone, a hemisphere, or the like.
In addition, when the concave and convex surfaces 4a and 5a are substantially targeted with respect to at least one axis, there is little luminance unevenness and color unevenness in the light emitting surface, and a good light distribution shape can be obtained.
Further, when the concave and convex surfaces 4a and 5a are substantially targeted with respect to two axes, the luminance unevenness and the color unevenness in the light emitting surface are less, and a favorable light distribution shape can be obtained.

  For this reason, there is an effect of extending the life of the semiconductor light emitting device by reducing the luminance saturation and phosphor deterioration. Further, since the bonding area per unit volume is increased, the bonding strength is increased even when the first resin member 4 and the second resin member 5 having different thermal expansion coefficients are used. And the second resin member 5 can be prevented from peeling off, and a highly reliable semiconductor light emitting device can be provided.

  Furthermore, when the semiconductor light-emitting element 8 to be used has a peak wavelength in the range of 360 to 410 nm, basically, three types of phosphors of blue, green and red are used and mixed at a ratio of a predetermined light source color. Use one, but add an emission wavelength between 550 and 600 nm, which is between the emission spectra of the green and red phosphors. In other words, the color rendering can be enhanced by adding a phosphor that emits yellowish green, yellow, or orange light.

When the semiconductor light emitting element 8 that emits blue light near 460 nm is used, a phosphor that emits yellow light having a complementary color relationship may be used.
For example, when the phosphor that can be used in the semiconductor light emitting device 8 having a peak wavelength in the range of 360 to 410 nm is a red phosphor, there are La2O2S: Eu and Y2O2S: Eu, and the green phosphor includes ZnS: Cu, Al, and the like. BaMgAl10O17: Eu, Mn and the like, and blue phosphors include BaMgAl10O17: Eu and the like.
Thus, by providing an uneven shape at the interface between the first resin member 4 and the second resin member 5, the bonding area between the first and second resin members 5 is increased, and the adhesive force is increased to increase reliability. In addition, it is possible to obtain a semiconductor light-emitting device that is compact, efficient, and excellent in lifetime characteristics.

Embodiment 2. FIG.
FIG. 6 is a longitudinal sectional view taken along the axis of symmetry of a semiconductor light-emitting device showing Embodiment 2 of the present invention. In the figure, the interface between the first resin member 4 and the second resin member 5 has a plurality of fan shapes with the radii ri, r2 and r3 sequentially increasing from the central axis Z in the lateral direction with the semiconductor light emitting element 8 as the center. A spherical surface 4a1 (5a1), a truncated conical surface 4a2 (5a2) formed by rotating the outline formed by sequentially arranging arcs and radial lines of the arcs around the central axis Z around the central axis Z; It is composed of an uneven composite surface including a spherical surface 4a3 (5a3), a truncated conical surface 4a4 (5a4), and a spherical surface 4a5 (5a5).

As described above, the spherical surfaces 4a (5a), 4a3 (5a3), 4a5 (with the radius r1 sequentially increased from r2 and r3 sequentially shifted outward from the central axis Z with the structure center of the semiconductor light emitting element 8 as the center. 5a5) is the main surface, and in the part where the radius of the spherical surface changes, it is formed by the combination of the main surface and the sub surface with the truncated conical surfaces 4a2 (5a2) and 4a4 (5a4) as the sub surfaces that connect the curved surfaces. The primary radiation light emitted from the semiconductor light emitting element 8 is set so as to be perpendicularly incident on the interface between the first resin member 4 and the second resin member 5.
Other configurations are the same as those of the first embodiment shown in FIG.

  Such a shape can be formed using a method similar to the method described in the first embodiment, and thus description thereof is omitted.

  In such a configuration, reflection at the interface between the first resin member 4 and the second resin member 5 is reduced, and the light from the semiconductor light emitting element 8 that has passed through the first resin member 4 is efficiently transmitted to the second resin member 4. The phosphor layer of the resin member 5 can be irradiated, and the luminous efficiency can be increased.

Embodiment 3 FIG.
In the second embodiment, the light emitting surface of the second resin member 5 is a flat surface. However, in the present embodiment, the second resin member 5 is made uneven in the interface between the first resin member 4 and the second resin member 5. The light emitting surface direction is also uneven according to the surface.
In the conventional semiconductor light emitting device, when the wavelength converted light by the phosphor disposed on the semiconductor light emitting element 8 side of the phosphor layer passes through the phosphor layer, the light is transmitted on the phosphor surface disposed in the optical path. There is a problem that a component that cannot go straight due to the shielding is generated, and the component is scattered on the surface of the phosphor, and a component that multi-reflects between the phosphors is generated in the phosphor layer, thereby reducing the light extraction efficiency.
In addition, when a phosphor having a body color is contained in the phosphor layer, a part of light having a wavelength converted by the phosphor is absorbed (for example, ZnS: Cu, Au and YAG phosphors are There is also a problem of reducing the light extraction efficiency by having a body color of yellow to yellow-green, and thus blue light is absorbed. Therefore, when the optical path length of the light emitted from the semiconductor light emitting element 8 in the phosphor layer is dependent on the radiation angle as in the conventional example, unevenness in brightness or color occurs in the extracted light from the semiconductor light emitting device. There is.
The present embodiment has a structure that suppresses the above problem.

FIG. 7 is a longitudinal sectional view taken along the axis of symmetry of a semiconductor light emitting device showing Embodiment 3 of the present invention.
In FIG. 7, the interface between the first resin member 4 and the second resin member 5 is the same as in FIG. 6 of the second embodiment, and the light emitting surface of the second resin member 5 is replaced with the first resin member. 4 of the four concavo-convex surfaces 4a, and the concavo-convex composite surfaces of the spherical surfaces 5s1, 8s3 and the truncated conical surfaces 5s2, 5s4 so that the thickness in the irradiation direction of the primary radiation from the spherical surfaces 4a1, 4a3, 4a5 becomes a predetermined thickness. Consists of
Other configurations are the same as those of the first embodiment shown in FIG.

The material selection and formation method is as follows. First, after the first resin member 4 is formed and cured by the method described in the first embodiment, the second resin member 5 containing the phosphor is changed to the first resin member 4. After being injected into the concavo-convex surface 4a, the concavo-convex surfaces 5s1 to 5s5 are formed on the surface of the second resin member 5 by curing in a state in which a mold on which a desired concavo-convex surface has been formed is pressed.
In addition, although it is as showing in Embodiment 1 to be careful when selecting the type | mold which molds an uneven surface, and the 2nd resin member 5, in this Embodiment, especially as the 2nd resin member 5 It is preferable to select a resin that can retain the uneven surface and can provide strength after curing.

  In this configuration, the light emitted from the semiconductor light emitting element 8 toward the second resin member 5 is perpendicularly incident on the interface between the first resin member 4 and the second resin member 5, and the second The optical path length in the resin member 5, that is, the phosphor layer is uniform regardless of the radiation angle of the primary radiation.

As described above, since the second resin member 5 is made uneven in accordance with the unevenness of the interface between the first resin member 4 and the second resin member 5, the first resin member 4 and the second resin member 5 are also made uneven. In addition to improving the adhesive strength of the resin member 5, the light emitted from the semiconductor light emitting element 8 toward the second resin member 5 is incident on the interface between the first resin member 4 and the second resin member 5. The optical path length in the second resin member 5, that is, the phosphor layer is uniform regardless of the radiation angle of the primary radiation, and the luminance in the light emission surface of the light extracted from the semiconductor light emitting device and A semiconductor light emitting device having excellent color uniformity, high efficiency, and excellent lifetime characteristics can be obtained.
In FIG. 2 of the first embodiment, the light emitting surface 5s of the second resin member 5 has the same shape as the concave and convex surfaces 4a and 5a provided at the interface between the first resin member 4 and the second resin member 5. It may be an uneven surface.

Embodiment 4 FIG.
In general, the closer the light emitting surface size is to a point light source, the easier it is to control the light distribution characteristics of light using an optical lens or the like.
The size of the semiconductor light emitting device is determined to an appropriate size in consideration of characteristics such as light emission and heat dissipation, and productivity. In order to avoid the phosphor deterioration and luminance saturation described above, the emitted light from the semiconductor light emitting element 8 is used. In the case of taking measures to expand the irradiated area of the phosphor with respect to the plane without providing irregularities at the interface between the first resin member 4 and the second resin member 5, for the above reasons, It has been difficult to control the light distribution of the light extracted from the semiconductor light emitting device.

However, if the semiconductor light emitting device described in Embodiments 1 to 3 is used, the area of the light source, that is, the light emitting surface of the semiconductor light emitting device can be set to an appropriate size that should be originally set. And in actual light distribution control.
Therefore, in this embodiment, an optical lens is provided in the semiconductor light emitting device shown in Embodiments 1 to 3.

FIG. 8 is a longitudinal sectional view taken along the axis of symmetry of a semiconductor light-emitting device showing Embodiment 4 of the present invention. In FIG. 8, an optical lens 6 is provided in the semiconductor light emitting device shown in the first embodiment. Others are the same as those of the first embodiment shown in FIG.
In this case, as the optical lens 6 used in the semiconductor light emitting device described in the first and second embodiments, for example, a resin lens formed of a thermoplastic resin such as a separately formed cyclic olefin resin, polycarbonate resin, or methacrylic resin can be used. Then, the resin lens 6 is pressure-bonded before the second resin member 5 is cured to obtain an optical contact between the semiconductor light emitting device and the resin lens 6, and then the second resin member 5 is cured to provide an optical lens. A semiconductor light emitting device can be obtained.

  On the other hand, as the optical lens 6 used in the semiconductor light emitting device shown in the third embodiment, a thermosetting resin such as an epoxy resin can be used, for example, and the second resin member 5 is cured to form a desired uneven shape. After producing the semiconductor light emitting device described in the third embodiment and installing the semiconductor light emitting device in a mold in which a desired optical lens shape is formed in advance, an epoxy resin is introduced into the mold and thermosetting is performed. By doing so, a semiconductor light emitting device with an optical lens can be obtained.

As described above, since the optical lens 6 is provided, the light emitting area is close to that of a point light source, and a good light distribution control can be performed by installing an optical lens having a desired light distribution.
The semiconductor light emitting device shown in FIG. 8 may be the one shown in the second and third embodiments.

1 is an exploded perspective view of a semiconductor light emitting device showing Embodiment 1 of the present invention. FIG. It is a longitudinal cross-sectional view in the symmetry axis of the semiconductor light-emitting device which shows Embodiment 1 of this invention. It is a perspective view when the 2nd resin member of the semiconductor light-emitting device which shows Embodiment 1 of this invention is remove | excluded. It is explanatory drawing of each axis | shaft regarding the uneven surface of the 2nd resin member of the semiconductor light-emitting device which shows Embodiment 1 of this invention. It is a comparison figure of the light distribution curve by the number of the symmetrical axes of the semiconductor light-emitting device which shows Embodiment 1 of this invention. It is a longitudinal cross-sectional view in the symmetry axis of the semiconductor light-emitting device which shows Embodiment 2 of this invention. It is a longitudinal cross-sectional view in the symmetry axis of the semiconductor light-emitting device which shows Embodiment 3 of this invention. It is a longitudinal cross-sectional view in the symmetry axis of the semiconductor light-emitting device which shows Embodiment 4 of this invention.

Explanation of symbols

1 package, 2 external electrode, 4 first resin member, 4a, 5a uneven surface, 4a1, 4a3, 4a5, 5a1, 5a3, 5a5, spherical surface, 4a2, 4a4, 5a2, 5a4 frustoconical surface, 5 second Resin member, 5s light emitting surface, 5s1, 5s3, 5s5 spherical surface, 5s2, 5s4 frustoconical surface, 6 optical lens, 7 reflector, 8 semiconductor light emitting element.

Claims (9)

In a semiconductor light emitting device including a semiconductor light emitting element mounted on a mounting member and a sealing resin member covering the semiconductor light emitting element,
The sealing resin member includes at least a first resin member that covers the semiconductor light emitting element;
A second resin member containing a wavelength conversion material that absorbs light emitted from the semiconductor light emitting element and converts it into light of a different wavelength;
A semiconductor light emitting device characterized in that an interface between the first resin member and the second resin member is an uneven surface. Having at least one symmetry axis in the vicinity of the concavo-convex surface, the concavo-convex surface of the interface between the first resin member and the second resin member being substantially symmetrical.
The symmetry axis is configured to be substantially orthogonal to a central axis at which a light distribution of primary radiation emitted from the semiconductor light emitting element is maximized, or is substantially orthogonal to the central axis passing through the vicinity of the central axis. The semiconductor light-emitting device according to claim 1. The concavo-convex surface of the interface between the first resin member and the second resin member has a substantially symmetrical shape and has at least two symmetry axes intersecting each other in the vicinity of the concavo-convex surface,
The symmetry axis is configured to be substantially orthogonal to a central axis at which a light distribution of primary radiation emitted from the semiconductor light emitting element is maximized, or is substantially orthogonal to the central axis passing through the vicinity of the central axis. The semiconductor light-emitting device according to claim 1.   4. The light emitting surface of the second resin member is an uneven surface having the same shape as the uneven surface provided at the interface between the first resin member and the second resin member. A semiconductor light emitting device according to claim 1.   The uneven surface provided at the interface between the first resin member and the second resin member has a shape that allows primary radiation from the semiconductor light emitting element to be irradiated perpendicularly to the interface. The semiconductor light-emitting device according to claim 1.   The uneven surface is centered on the semiconductor light emitting element, and a plurality of sectors having a radius increasing sequentially from each arc formed by sequentially arraying along a horizontal plane from the central axis, and a radius line connecting the arcs 6. The semiconductor light emitting device according to claim 5, comprising a spherical surface and a frustoconical surface formed by rotating the outer shape line once around the central axis.   The light emitting surface of the second resin member is a concavo-convex surface such that the thickness in the irradiation direction of the primary radiation light from each spherical surface is a predetermined thickness among the concavo-convex surfaces of the first resin member. The semiconductor light emitting device according to claim 5 or 6.   The refractive index of the first resin member and the second resin member are equal, or the refractive index of the second resin member is higher than the refractive index of the first resin member. 8. A semiconductor light emitting device according to any one of 1 to 7. The semiconductor light-emitting device according to claim 1, further comprising an optical lens that controls light distribution from the light-emitting surface of the second resin member.

Images