JP2006281639A - Functional device, its manufacturing method, and liquid jetting head - Google Patents

Functional device, its manufacturing method, and liquid jetting head Download PDF

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JP2006281639A
JP2006281639A JP2005105420A JP2005105420A JP2006281639A JP 2006281639 A JP2006281639 A JP 2006281639A JP 2005105420 A JP2005105420 A JP 2005105420A JP 2005105420 A JP2005105420 A JP 2005105420A JP 2006281639 A JP2006281639 A JP 2006281639A
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substrate
opening
recess
functional device
adhesive
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JP4572371B2 (en
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Shinya Momose
信也 百瀬
Kenichi Kitamura
健一 北村
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Seiko Epson Corp
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Abstract

<P>PROBLEM TO BE SOLVED: To solve the problem that a wiring pattern on the board is short-circuited when metallic foreign matters are peeled off, the metallic foreign matters enter a hole section like an ink passage in the substrate of an inkjet head and the nozzle of the liquid jetting head is clogged by preventing the over-etching of the recess section from occurring and preventing metallic foreign matters from remaining on the bottom surface of the recess section when a recess for releasing an adhesive is formed. <P>SOLUTION: This functional device is formed by a plurality of the boards are bonded with an adhesive. In the functional device, the recess section which becomes a region for releasing the excessive adhesive is formed at least on one of the bonding surfaces of the boards which are bonded to each other. The shape of the opening section of the recess section is formed in such a manner that the acute angle of which may not become the direction side being orthogonal with the crystal orientation 3 of the board. <P>COPYRIGHT: (C)2007,JPO&INPIT

Description

本発明は、液体噴射ヘッドなどの機能デバイス及びその製造方法に関するものである。詳しくは、本発明は、複数の基板を接着剤で接合するための構造の改良に関するものである。   The present invention relates to a functional device such as a liquid ejecting head and a manufacturing method thereof. Specifically, the present invention relates to an improvement in a structure for joining a plurality of substrates with an adhesive.

特開2002−210965号公報(特許文献1)の図1及び図2には、シリコン単結晶基板からなると共に液滴を吐出するノズル開口21を複数個有し、前記ノズル開口21と連通する流路が形成される流路形成基板10に接着剤を介して接合されるノズルプレート20が記載されている。このノズルプレートは、前記流路形成基板10との接合面となる領域に、ハーフエッチングによって形成された複数の凹部23を有することにより、ノズルプレートと流路形成基板とを接着する際に、無駄な接着剤が凹部に流れ込むようにしている。これにより、余分な接着剤がインク流路へ流れ込むことを防いでいる。
特開2002−210965号公報
FIG. 1 and FIG. 2 of Japanese Patent Laid-Open No. 2002-210965 (Patent Document 1) have a plurality of nozzle openings 21 that are made of a silicon single crystal substrate and discharge droplets, and are in communication with the nozzle openings 21. A nozzle plate 20 is described that is bonded to a flow path forming substrate 10 on which a path is formed via an adhesive. This nozzle plate has a plurality of recesses 23 formed by half-etching in a region serving as a joint surface with the flow path forming substrate 10, so that it is wasteful when bonding the nozzle plate and the flow path forming substrate. The adhesive is allowed to flow into the recess. This prevents excess adhesive from flowing into the ink flow path.
Japanese Patent Laid-Open No. 2002-210965

特許文献1のノズルプレートでは、図1及び図2に示すように、圧力発生室12等が形成された流路形成基板10の圧電素子300側には、リザーバ100の少なくとも一部を構成するリザーバ部31を有するリザーバ形成基板30が接合されている。このリザーバ形成基板30には、封止膜41及び固定板42とからなるコンプライアンス基板40が接合されている。   In the nozzle plate of Patent Document 1, as shown in FIGS. 1 and 2, a reservoir constituting at least a part of the reservoir 100 is provided on the piezoelectric element 300 side of the flow path forming substrate 10 in which the pressure generating chamber 12 and the like are formed. A reservoir forming substrate 30 having a portion 31 is joined. A compliance substrate 40 including a sealing film 41 and a fixing plate 42 is bonded to the reservoir forming substrate 30.

このリザーバ基板とコンプライアンス基板も接着剤で接合されるために、少なくとも一方の基板の接合面に、既述の凹部を形成する必要がある。この凹部は、余分な接着剤を収容できるようになるべく深く形成される必要があり、かつ多数の凹部を基板上に配列する必要から、レイアウトのし易さを考えてシリコン基板の結晶方位に沿った辺から構成される菱形(或いは平行四辺形)形状の開口をもったものが凹部として好ましいと考えられる。   Since the reservoir substrate and the compliance substrate are also bonded with an adhesive, it is necessary to form the above-described recesses on the bonding surface of at least one of the substrates. These recesses need to be formed as deep as possible to accommodate excess adhesive, and since it is necessary to arrange a large number of recesses on the substrate, the crystal orientation of the silicon substrate is taken into consideration for ease of layout. One having a rhombus (or parallelogram) -shaped opening composed of a plurality of sides is considered preferable as the recess.

図5は、結晶方位(110)のシリコンウエハにおいて、オリフラを図示する方向にした場合の各結晶方位の向きを表している。(110)に対して90°の角度を成す(111)面は結晶方位1及び結晶方位2で定まり、(110)に対して約35°の角度を成す(111)面は結晶方位3で定まる。凹部の深さを支配するのは開口部の、前記結晶方位3に直交する方向の形状(例えば、幅)である。そのため、凹部の開口部の面積が同じであっても前記結晶方位3に直交する方向の幅の相違によって、エッチングが浅かったり、深くなったりしていた。既述のとおり、開口部の結晶方位3に直行する方向距離を長くすることにより、凹部のエッチングを深く形成できる。   FIG. 5 shows the orientation of each crystal orientation in the orientation of the orientation flat in the silicon wafer having the crystal orientation (110). The (111) plane that forms an angle of 90 ° with respect to (110) is determined by crystal orientation 1 and crystal orientation 2, and the (111) plane that forms an angle of about 35 ° with respect to (110) is determined by crystal orientation 3 . It is the shape (eg, width) of the opening in the direction perpendicular to the crystal orientation 3 that dominates the depth of the recess. Therefore, even if the area of the opening of the recess is the same, the etching is shallow or deep due to the difference in the width in the direction perpendicular to the crystal orientation 3. As described above, the etching of the concave portion can be deeply formed by increasing the direction distance perpendicular to the crystal orientation 3 of the opening.

しかしながら、既述のとおりの凹部の形状では次の問題がある。第1に、凹部を持った基板に配線パターンを形成する際に、レジストが凹部内深くに入ってしまい、レジストの露光・現像の際にレジストが除去され難く、金属膜が凹部内に残ってしまう。この凹部内の金属異物を除去するために、現像液に界面活性剤を入れること、金属エッチング時間を長くすることが考えられるが、これも十分ではなく、金属からなる異物を凹部に残らないようにすることは実現されなかった。このため、金属からなる異物によって、基板同士の接着強度が低下する問題がある。また、金属の異物がインク流路のインクに混入して、インクノズルを閉塞させるおそれがある。   However, the shape of the recess as described above has the following problems. First, when forming a wiring pattern on a substrate having a recess, the resist enters deeply into the recess, and the resist is difficult to remove during exposure and development of the resist, and the metal film remains in the recess. End up. In order to remove the metal foreign matter in the concave portion, it is conceivable to add a surfactant to the developer and lengthen the metal etching time, but this is not sufficient, so that the foreign matter made of metal does not remain in the concave portion. It was not realized. For this reason, there is a problem that the adhesion strength between the substrates decreases due to a foreign substance made of metal. In addition, there is a possibility that metal foreign matter enters the ink in the ink flow path and closes the ink nozzle.

第2に、凹部の開口部の鋭角が結晶方位3に直交する方向側にあると、基板をエッチングして凹部を形成する際にオーバーエッチングとなるために、2つの基板を貼り合わせる際に、この凹部からクラックが基板に発生する問題がある。従って、基板に形成されるインク導入口及びインク導入路に相当する孔に近接して凹部を形成することができなかった。孔に凹部を近接させた場合には、基板にクラックが発生することにより、基板に形成される配線パターンにインクが漏洩し、複数の配線を短絡させるなどの問題ある。一方、孔から離れた位置に凹部を形成すると、余分な接着剤を孔側に行かないように、凹部で十分収容することが困難であった。   Second, when the acute angle of the opening of the concave portion is on the direction side perpendicular to the crystal orientation 3, overetching occurs when the concave portion is formed by etching the substrate. There is a problem that a crack is generated in the substrate from the concave portion. Therefore, the concave portion cannot be formed in the vicinity of the hole corresponding to the ink introduction port and the ink introduction path formed in the substrate. When the concave portion is brought close to the hole, there is a problem that a crack is generated in the substrate, so that ink leaks to a wiring pattern formed on the substrate and a plurality of wirings are short-circuited. On the other hand, when the concave portion is formed at a position away from the hole, it is difficult to sufficiently accommodate the concave portion so that excess adhesive does not go to the hole side.

そこで、本発明はこのような課題を解決するために、 複数の基板を接着剤で接合して形成される機能性デバイスにおいて、互いに接着される基板同士の接合面の少なくとも一方に、余分な接着剤の逃げ用の領域となる凹部が形成され、前記凹部の開口部の形状を、鋭角が前記基板の前記結晶方位3に直交する方向側にならないように形成してなる、ことを特徴とするものである。   Therefore, in order to solve such a problem, the present invention provides a functional device formed by bonding a plurality of substrates with an adhesive, and an extra adhesion to at least one of the bonding surfaces of the substrates to be bonded to each other. A recess serving as a region for escaping the agent is formed, and the shape of the opening of the recess is formed so that an acute angle is not on a direction perpendicular to the crystal orientation 3 of the substrate. Is.

すなわち、本発明によれば、凹部の開口部の鋭角が、基板の結晶方位3に直交する方向側にならないように、基板に対して形成することにより、凹部のオーバエッチングを防止して、凹部が深くなり過ぎないようにした。これにより、凹部から基板にクラックが発生し難くし、かつ凹部を浅く形成することにより、凹部深くに残存する金属異物を除去できないという課題を解決できる。   That is, according to the present invention, the recess is prevented from being over-etched by being formed on the substrate so that the acute angle of the opening of the recess is not on the direction orthogonal to the crystal orientation 3 of the substrate. To avoid becoming too deep. Accordingly, it is possible to solve the problem that it is difficult for cracks to be generated in the substrate from the recesses, and the metal foreign matter remaining deep in the recesses cannot be removed by forming the recesses shallowly.

さらに、凹部の開口端形状を多角形状とすることにより、開口部を深くすることなく開口表面積を大きくでき、基板同士を接着する際に接着面から漏れ出す余分な接着剤を凹部に十分収容することが可能となる。   Furthermore, by making the opening end shape of the concave portion into a polygonal shape, the surface area of the opening can be increased without deepening the opening portion, and extra adhesive that leaks from the bonding surface when the substrates are bonded together is sufficiently accommodated in the concave portion. It becomes possible.

前記開口部の形状には平行四辺形、菱形、又は多角形がある。この多角形の形状によれば、開口部の径を増やすことなく、開口部の面積を増やす事が出来るため、凹部の深さが浅くなっても、凹部内に接着剤を基板同士の接着面から流れ出さないように収容することができる。多角形の上限には制限がないが、結晶方位(110)のシリコン基板を用いた場合は異方性エッチングによる制約から、結晶方位1、結晶方位2、及び結晶方位3の3種類の角度から形成される6角形を上限とすることが好ましい。   The shape of the opening includes a parallelogram, a rhombus, or a polygon. According to this polygonal shape, the area of the opening can be increased without increasing the diameter of the opening. Therefore, even if the depth of the recess becomes shallow, the adhesive is bonded to the bonding surface between the substrates in the recess. It can be accommodated so that it will not flow out of it. The upper limit of the polygon is not limited. However, when a silicon substrate having a crystal orientation (110) is used, three types of angles, crystal orientation 1, crystal orientation 2, and crystal orientation 3, are used due to restrictions due to anisotropic etching. The upper limit is preferably the hexagon formed.

円弧状に開口部を形成することも好ましいが、シリコン基板の場合には異方性エッチングのために、円弧状に開口部を形成することは困難である。   It is also preferable to form the opening in an arc shape, but in the case of a silicon substrate, it is difficult to form the opening in an arc shape due to anisotropic etching.

本発明の機能デバイスには液体噴射ヘッドやその他に所定の素子を基板に形成してなるものが含まれる。   The functional device of the present invention includes a liquid ejecting head and other devices in which predetermined elements are formed on a substrate.

次に本発明に係る液体噴射ヘッドの中の一つの態様であるインクジェットヘッドの実施形態について説明する。図1は、インクジェットヘッドを示す分解斜視図であり、 図2はその断面図である。インク流路形成基板10の一方の面は開口面となり、他方の面には予め熱酸化により形成した二酸化シリコンからなる、厚さ1〜2μmの弾性膜50が形成されている。   Next, an embodiment of an ink jet head which is one aspect of the liquid jet head according to the present invention will be described. FIG. 1 is an exploded perspective view showing an inkjet head, and FIG. 2 is a sectional view thereof. One surface of the ink flow path forming substrate 10 serves as an opening surface, and an elastic film 50 having a thickness of 1 to 2 μm made of silicon dioxide previously formed by thermal oxidation is formed on the other surface.

この流路形成基板10には、シリコン単結晶基板を異方性エッチングすることにより、複数の隔壁11によって区画された圧力発生室12が幅方向に並設されている。その長手方向外側には、リザーバ形成基板30のリザーバ部31に連通して各圧力発生室12の共通のインク室となるリザーバ100の一部を構成する連通部13が形成され、各圧力発生室12の長手方向一端部とそれぞれインク供給路14を介して連通されている。   In the flow path forming substrate 10, pressure generating chambers 12 partitioned by a plurality of partition walls 11 are arranged in parallel in the width direction by anisotropically etching a silicon single crystal substrate. On the outer side in the longitudinal direction, there is formed a communication portion 13 that forms part of the reservoir 100 that communicates with the reservoir portion 31 of the reservoir forming substrate 30 and serves as a common ink chamber for each pressure generating chamber 12. 12 communicated with one end portion in the longitudinal direction via an ink supply path 14.

流路形成基板10の他方面側には、各圧力発生室12のインク供給路14とは反対側で連通するノズル開口21が穿設されたノズルプレート20が接着剤によって接合されている。ノズル開口21はこのシリコン単結晶基板をドライエッチングすることによって形成されている。ノズル開口21は、インク滴が吐出されるノズル部21aと、ノズル部21aよりも大きい径で形成されノズル部21aと圧力発生室12とを連通するノズル連通部21bとからなる。   On the other surface side of the flow path forming substrate 10, a nozzle plate 20 in which a nozzle opening 21 communicating with the side opposite to the ink supply path 14 of each pressure generating chamber 12 is formed is joined by an adhesive. The nozzle opening 21 is formed by dry etching the silicon single crystal substrate. The nozzle opening 21 includes a nozzle portion 21 a from which ink droplets are ejected, and a nozzle communication portion 21 b that is formed with a larger diameter than the nozzle portion 21 a and communicates the nozzle portion 21 a and the pressure generation chamber 12.

ノズルプレート20は、流路形成基板10との接着部分、例えば、圧力発生室12の周囲に対応する領域に、各圧力発生室12の周縁に沿って複数の凹部23が設けられている。このような凹部23を設けることにより、ノズルプレート20と流路形成基板10とを接着剤を介して接着する際に、無駄な接着剤がこの凹部23に流れ込むため、接着剤が圧力発生室12内へ過度に流れ込むのを防止することができる。   The nozzle plate 20 is provided with a plurality of recesses 23 along the periphery of each pressure generation chamber 12 in a region corresponding to the periphery of the pressure generation chamber 12, for example, a portion bonded to the flow path forming substrate 10. By providing such a recess 23, when the nozzle plate 20 and the flow path forming substrate 10 are bonded via an adhesive, a wasteful adhesive flows into the recess 23. It is possible to prevent excessive flow into the inside.

クレータ部22と凹部23とは、シリコン単結晶基板を両面から同時に異方性エッチングすることにより、同一工程で形成することができる。凹部の開口部の形状については後述する。   The crater portion 22 and the recess portion 23 can be formed in the same process by simultaneously anisotropically etching the silicon single crystal substrate from both sides. The shape of the opening of the recess will be described later.

流路形成基板10に設けられた弾性膜50上には、厚さが例えば、約0.2μmの下電極膜60と、厚さが例えば、約0.5〜3μmの圧電体層70と、厚さが例えば、約0.1μmの上電極膜80とが積層形成されて、圧電素子300を構成している。圧電素子300は、下電極膜60、圧電体層70、及び上電極膜80とからなる。下電極膜60は圧電素子300の共通電極としている。   On the elastic film 50 provided on the flow path forming substrate 10, a lower electrode film 60 with a thickness of, for example, about 0.2 μm, a piezoelectric layer 70 with a thickness of, for example, about 0.5 to 3 μm, For example, the upper electrode film 80 having a thickness of about 0.1 μm is laminated to form the piezoelectric element 300. The piezoelectric element 300 includes a lower electrode film 60, a piezoelectric layer 70, and an upper electrode film 80. The lower electrode film 60 serves as a common electrode for the piezoelectric element 300.

図1及び図2に示すように、圧力発生室12等が形成された流路形成基板10の圧電素子300側には、リザーバ100の少なくとも一部を構成するリザーバ部31を有するリザーバ形成基板30が接合されている。このリザーバ部31は、リザーバ形成基板30を厚さ方向に貫通して圧力発生室12の幅方向に亘って形成されている。そして、このリザーバ部31が、弾性膜50及び下電極膜60を貫通して設けられる貫通孔51を介して流路形成基板10の連通部13と連通され、各圧力発生室12の共通のインク室となるリザーバ100が構成されている。   As shown in FIGS. 1 and 2, a reservoir forming substrate 30 having a reservoir portion 31 constituting at least a part of the reservoir 100 on the piezoelectric element 300 side of the flow path forming substrate 10 in which the pressure generating chambers 12 and the like are formed. Are joined. The reservoir portion 31 is formed across the width direction of the pressure generating chamber 12 through the reservoir forming substrate 30 in the thickness direction. The reservoir portion 31 is communicated with the communicating portion 13 of the flow path forming substrate 10 through a through hole 51 provided through the elastic film 50 and the lower electrode film 60, so that the common ink of each pressure generating chamber 12 is used. A reservoir 100 serving as a chamber is configured.

リザーバ形成基板30としては、結晶方位(面方位)が(110)のシリコン単結晶基板を用いた。ノズルプレート20の場合と同様に、熱硬化性の接着剤を用いた高温での接着により流路形成基板10とリザーバ形成基板30とを確実に接着することができる。このリザーバ形成基板30には、封止膜41及び固定板42とからなるコンプライアンス基板40が接合されている。固定板42のリザーバ100に対向する領域は、厚さ方向に完全に除去された開口部43となっているため、リザーバ100の一方面は可撓性を有する封止膜41のみで封止され、内部圧力の変化によって変形可能な可撓部32となっている。   As the reservoir forming substrate 30, a silicon single crystal substrate having a crystal orientation (plane orientation) of (110) was used. As in the case of the nozzle plate 20, the flow path forming substrate 10 and the reservoir forming substrate 30 can be reliably bonded by high-temperature bonding using a thermosetting adhesive. A compliance substrate 40 including a sealing film 41 and a fixing plate 42 is bonded to the reservoir forming substrate 30. Since the region of the fixing plate 42 that faces the reservoir 100 is an opening 43 that is completely removed in the thickness direction, one surface of the reservoir 100 is sealed only with a flexible sealing film 41. The flexible portion 32 is deformable by a change in internal pressure.

リザーバ100の長手方向略中央部外側のコンプライアンス基板40上には、リザーバ100にインクを供給するためのインク導入口35が形成されている。さらに、リザーバ形成基板30には、インク導入口35とリザーバ100の側壁とを連通するインク導入路36が設けられている。   An ink introduction port 35 for supplying ink to the reservoir 100 is formed on the compliance substrate 40 on the outer side of the central portion of the reservoir 100 in the longitudinal direction. Further, the reservoir forming substrate 30 is provided with an ink introduction path 36 that allows the ink introduction port 35 and the side wall of the reservoir 100 to communicate with each other.

リザーバ形成基板30の圧電素子300に対向する領域には、圧電素子300の運動を阻害しない程度の空間を確保した圧電素子保持部33が設けられている。そして、圧電素子300の少なくとも圧電体能動部320は、この圧電素子保持部33内に形成され、大気中の水分等の外部環境に起因する圧電素子300の破壊を防止しているが、厚ン電素子保持部33は完全に密封されていなくともよいが、外部からの影響を受けやすい状態にあってはならないような構造となっている。   In a region facing the piezoelectric element 300 of the reservoir forming substrate 30, a piezoelectric element holding portion 33 that secures a space that does not hinder the movement of the piezoelectric element 300 is provided. At least the piezoelectric active part 320 of the piezoelectric element 300 is formed in the piezoelectric element holding part 33 to prevent the destruction of the piezoelectric element 300 due to an external environment such as moisture in the atmosphere. The electric element holding portion 33 may not be completely sealed, but has a structure that should not be in a state where it is easily affected by the outside.

インクジェット式記録ヘッドは、図示しない外部インク供給手段と接続したインク導入口35からインクを取り込み、リザーバ100からノズル開口21に至るまで内部をインクで満たした後、外部の駆動回路からの記録信号に従い、上電極膜80と下電極膜60との間に電圧を印加し、弾性膜50、下電極膜60及び圧電体層70をたわみ変形させて、圧力発生室12内の圧力を高めてノズル開口21からインク滴を記録媒体や対象物に対して吐出する。流路形成基板30には外部回路から上下電極と結ぶ配線パターンが形成されている。   The ink jet recording head takes in ink from an ink introduction port 35 connected to an external ink supply means (not shown), fills the interior from the reservoir 100 to the nozzle opening 21, and then follows a recording signal from an external drive circuit. A voltage is applied between the upper electrode film 80 and the lower electrode film 60 to cause the elastic film 50, the lower electrode film 60, and the piezoelectric layer 70 to bend and deform, thereby increasing the pressure in the pressure generating chamber 12 and opening the nozzle. 21. Ink droplets are ejected from the recording medium or object. A wiring pattern is formed on the flow path forming substrate 30 to connect the upper and lower electrodes from an external circuit.

図3は、リザーバ形成基板30の平面図(一部拡大図)を示したものである。基板30には配線500が形成されており、この配線500の両側に凹部となる平行四辺形の開口をもった溝502が配線に近接しながら列状に形成されている。図4も流路形成基板の30の平面図であるが、倍率は図3のものよりも小さく、流路形成基板に形成された孔部504の回りに、列状に複数の凹部503が形成されている。   FIG. 3 is a plan view (partially enlarged view) of the reservoir forming substrate 30. A wiring 500 is formed on the substrate 30, and grooves 502 having parallelogram openings serving as recesses are formed on both sides of the wiring 500 in rows while being close to the wiring. FIG. 4 is also a plan view of the flow path forming substrate 30, but the magnification is smaller than that of FIG. 3, and a plurality of concave portions 503 are formed around the holes 504 formed in the flow path forming substrate. Has been.

この凹部はシリコン単結晶基板を厚さ方向に途中までエッチング(ハーフエッチング)することにより形成される。この凹部は、既述の凹部23と同様に互いに接合される基板の接合面から接着剤が漏れ出すことを防止するために設けられている。   The recess is formed by etching the silicon single crystal substrate halfway in the thickness direction (half etching). This concave portion is provided in order to prevent the adhesive from leaking out from the bonding surfaces of the substrates to be bonded to each other in the same manner as the above-described concave portion 23.

図5は、結晶方位(110)のシリコン単結晶基板600において、オリフラを図示する方向にした場合の各結晶方位の向きを表している。(110)に対して90°の角度を成す(111)面は結晶方位1及び結晶方位2で定まり、(110)に対して約35°の角度を成す(111)面は結晶方位3で定まる。凹部の深さを支配するのは開口部の、前記結晶方位3に直交する方向の形状(例えば、幅)である。   FIG. 5 shows the orientation of each crystal orientation in the orientation of the orientation flat in the silicon single crystal substrate 600 having the crystal orientation (110). The (111) plane that forms an angle of 90 ° with respect to (110) is determined by crystal orientation 1 and crystal orientation 2, and the (111) plane that forms an angle of about 35 ° with respect to (110) is determined by crystal orientation 3 . It is the shape (eg, width) of the opening in the direction perpendicular to the crystal orientation 3 that dominates the depth of the recess.

図6の602は、凹部の開口部の形状が、結晶方位1と結晶方位2の2つの角度から構成される平行四辺形(菱形)状態を示している。この形状では結晶方位3に直交する方向側に鋭角があることから、シリコン単結晶基板600のエッチングの際にオーバエッチングとなり凹部の深さが大きくなると共に、シリコン単結晶基板600にクラックが入りやすくなる。   602 in FIG. 6 shows a parallelogram (diamond) state in which the shape of the opening of the concave portion is composed of two angles of crystal orientation 1 and crystal orientation 2. In this shape, since there is an acute angle in the direction orthogonal to the crystal orientation 3, overetching occurs when the silicon single crystal substrate 600 is etched, the depth of the concave portion is increased, and the silicon single crystal substrate 600 is easily cracked. Become.

604は、凹部の開口部の形状が、結晶方位1と結晶方位3の2つの角度から構成される平行四辺形(菱形)状態を示している。この形状では平行四辺形の開口部の鋭角が結晶方位3に直交する方向側でないため開口部の形状をこのような関係になるようにすれば、凹部が深さ方向にオーバエッチングされることを防止することができる。   Reference numeral 604 denotes a parallelogram (diamond) state in which the shape of the opening of the concave portion is composed of two angles of crystal orientation 1 and crystal orientation 3. In this shape, the acute angle of the parallelogram opening is not in the direction perpendicular to the crystal orientation 3, so that if the opening shape has such a relationship, the recess is over-etched in the depth direction. Can be prevented.

本発明者の検討したところ、全て条件を同じくした場合に、開口部形状を602のものから604のものにすることによって、後者の凹部の深さは前者の(1/3)1/2になり、発生する金属異物の数が後者では前者の1/10であった。 As a result of investigation by the present inventor, when all the conditions are the same, by changing the shape of the opening from 602 to 604, the depth of the latter recess is reduced to (1/3) 1/2 of the former. Thus, the number of generated metal foreign objects was 1/10 of the former in the latter.

606は、凹部の開口部の形状が、結晶方位2と結晶方位3の2つの角度から構成される平行四辺形(菱形)状態を示している。608は、凹部の開口部の形状が、結晶方位1と結晶方位2及び結晶方位3の3つの角度から構成される六角形状態を示している。   Reference numeral 606 denotes a parallelogram (rhombus) state in which the shape of the opening of the recess is composed of two angles of crystal orientation 2 and crystal orientation 3. Reference numeral 608 denotes a hexagonal state in which the shape of the opening of the recess is composed of three angles of crystal orientation 1, crystal orientation 2, and crystal orientation 3.

既述の特性を持つ凹部としては、凹の開口部形状の径が同じとすると、より多角形にする事が好ましい。多角形にすることにより開口部の表面積が増加して、凹部の深さが小さくなってもより多くの接着剤を凹部内に逃がすことができる。   As the concave portion having the above-described characteristics, it is preferable to make the concave portion more polygonal when the diameter of the concave opening portion is the same. By making it polygonal, the surface area of the opening is increased, and more adhesive can be released into the recess even when the depth of the recess is reduced.

本発明に係る凹部は、結晶方位3に直交する方向側に鋭角を形成しない開口部形状としたことから、オーバエッチングの問題が無く、インク流路や配線に近接して凹部を設けることができる。   Since the recess according to the present invention has an opening shape that does not form an acute angle on the direction orthogonal to the crystal orientation 3, there is no problem of over-etching, and the recess can be provided close to the ink flow path and the wiring. .

また、結晶方位3に直交する方向側に開口部の鋭角があると、クラックの問題からインク流路に異物が混入するのを防ぐために、凹部を孔の端部や配線の端部から離さなくてはならない。凹部を孔部や配線に接して設けることにより、孔部付近の基板の接合面からはみ出す接着剤をインク流路に混入することなく、配線近傍に凹部を設ける場合には配線に異物が接触して配線が短絡するとなく、接着剤を凹部に確実に収めることができる。   Also, if there is an acute angle of the opening on the direction orthogonal to the crystal orientation 3, the recess should not be separated from the end of the hole or the end of the wiring in order to prevent foreign matter from entering the ink channel due to cracking problems. must not. By providing the recess in contact with the hole or the wiring, when the recess is provided in the vicinity of the wiring without adhering the adhesive protruding from the bonding surface of the substrate in the vicinity of the hole to the ink flow path, foreign matter may come into contact with the wiring. As a result, the wiring is not short-circuited, and the adhesive can be reliably stored in the recess.

流路又は配線近傍への凹部の配置は、複数の凹部が流路又は配線に沿って列状に構成されている。特に凹部を複数列になるように設けることにより、余分な樹脂を凹部により多く逃がすことができる。特に、凹部を多角形、特に六角形に形成することにより、配線や孔部が傾斜して形成されても、凹部を千鳥状にして、複数列に成るように形成できる。   In the arrangement of the recesses in the vicinity of the flow path or the wiring, the plurality of recesses are arranged in a line along the flow path or the wiring. In particular, by providing the recesses in a plurality of rows, a larger amount of excess resin can be released to the recesses. In particular, by forming the recesses in a polygonal shape, particularly in a hexagonal shape, the recesses can be formed in a staggered pattern so as to form a plurality of rows even if the wiring and the holes are inclined.

本実施形態では、凹部が形成される基板を、ノズルプレート20とリザーバ形成基板30としたが、これに限られるものではなく、ノズル開口などの孔や配線が行われる基板に拡げることができる。   In the present embodiment, the substrate in which the concave portion is formed is the nozzle plate 20 and the reservoir forming substrate 30, but is not limited thereto, and can be expanded to a substrate in which holes such as nozzle openings and wiring are performed.

尚、上述した実施形態においては、液体噴射ヘッドの一例としてインクジェットヘッドを挙げて説明したが、本発明は、広く液体噴射ヘッド全般を対象としたものであり、インク以外の液体を噴射する液体噴射ヘッドの製造方法にも勿論適用することができる。その他の液体噴射ヘッドとしては、例えば、プリンタ等の画像記録装置に用いられる各種の記録ヘッド、液晶ディスプレー等のカラーフィルタの製造に用いられる色材噴射ヘッド、有機ELディスプレー、FED(面発光ディスプレー)等の電極形成に用いられる電極材料噴射ヘッド、バイオchip製造に用いられる生体有機物噴射ヘッド等が挙げられる。   In the above-described embodiment, the ink jet head has been described as an example of the liquid ejecting head. However, the present invention is widely intended for the entire liquid ejecting head, and the liquid ejecting ejects a liquid other than ink. Of course, the present invention can also be applied to a head manufacturing method. Other liquid ejecting heads include, for example, various recording heads used in image recording apparatuses such as printers, color material ejecting heads used in the manufacture of color filters such as liquid crystal displays, organic EL displays, and FEDs (surface emitting displays). Examples thereof include an electrode material ejection head used for electrode formation, a bioorganic matter ejection head used for biochip production, and the like.

本発明に係るインクジェットヘッドの斜視図である。1 is a perspective view of an inkjet head according to the present invention. そのインクヘッドジェットの断面図である。It is sectional drawing of the ink head jet. 本発明の凹部が形成された基板の平面図である。It is a top view of the board | substrate with which the recessed part of this invention was formed. 本発明の凹部が形成された基板の他の例の平面図である。It is a top view of the other example of the board | substrate with which the recessed part of this invention was formed. 結晶方位(110)のシリコンウエハの結晶方位1、2、3を示した平面図である。It is the top view which showed crystal orientation 1, 2, and 3 of the silicon wafer of crystal orientation (110). 凹部の形成方向と、その開口部の複数の形状を示した平面図である。It is the top view which showed the formation direction of the recessed part, and the several shape of the opening part.

符号の説明Explanation of symbols

10 インク流路形成基板,20 ノズルプレート,21 ノズル開口,30 リザーバ形成基板,300 圧電素子,500 配線,502 溝,503 列状の凹部,504 孔部,600 シリコン単結晶基板,602、604、606、608 凹部   DESCRIPTION OF SYMBOLS 10 Ink flow path formation board | substrate, 20 Nozzle plate, 21 Nozzle opening, 30 Reservoir formation board | substrate, 300 Piezoelectric element, 500 Wiring, 502 Groove, 503 Row-shaped recessed part, 504 Hole part, 600 Silicon single crystal substrate, 602, 604, 606, 608 recess

Claims (7)

複数の基板を接着剤で接合して形成される機能性デバイスにおいて、
互いに接着される基板同士の接合面の少なくとも一方に、余分な接着剤の逃げ用の領域となる凹部が形成され、
前記凹部の開口部の形状を、鋭角部分が前記基板の深さ方向を支配する結晶方位に直交する方向側にならないように形成してなる、機能性デバイス。
In a functional device formed by bonding a plurality of substrates with an adhesive,
At least one of the bonding surfaces of the substrates to be bonded to each other is formed with a recess serving as an area for excess adhesive to escape,
A functional device in which the shape of the opening of the concave portion is formed such that the acute angle portion does not become a direction side orthogonal to the crystal orientation that governs the depth direction of the substrate.
前記開口部の形状を、鈍角部分が前記基板の深さ方向を支配する結晶方位に直交する方向側になるように形成してなる、請求項1記載の機能性デバイス。   The functional device according to claim 1, wherein the shape of the opening is formed such that an obtuse angle portion is on a direction side orthogonal to a crystal orientation that governs the depth direction of the substrate. 前記開口部の形状が平行四辺形、菱形、又は多角形である請求項1又は2に記載の機能性デバイス。   The functional device according to claim 1, wherein the shape of the opening is a parallelogram, a rhombus, or a polygon. 前記多角形の開口部が六角形以上の多角形の開口部である、請求項3記載の機能性デバイス。   The functional device according to claim 3, wherein the polygonal opening is a hexagonal or more polygonal opening. 前記基板を貫通する孔及び/又は前記基板に配線が形成されており、前記凹部が前記孔及び/又は配線の回りに複数列から成るように、前記基板に対してハーフエッチングにより形成されてなる請求項1〜4の何れか項記載のデバイス。   A hole penetrating the substrate and / or a wiring is formed in the substrate, and the recess is formed by half etching with respect to the substrate so that the concave portion is formed in a plurality of rows around the hole and / or the wiring. The device according to claim 1. 複数の基板を接着剤で接合して、液滴を吐出するノズル開口へ液体を供給する液体流路を形成してなる液体噴射ヘッドにおいて、
互いに接着される基板同士の接合面の少なくとも一方の、前記液体流路となる孔部周辺及び配線部の少なくとも一方の周辺に、余分な接着剤の逃げ用の領域となる凹部が形成され、
前記凹部の開口部の形状が、請求項1〜5の何れか記載の形状になるように形成されてなる、液体噴射ヘッド。
In a liquid ejecting head formed by joining a plurality of substrates with an adhesive and forming a liquid flow path for supplying liquid to a nozzle opening for discharging droplets,
At least one of the bonding surfaces of the substrates to be bonded to each other, a recess is formed in the periphery of the hole serving as the liquid flow path and the periphery of at least one of the wiring part, which serves as a region for excess adhesive to escape,
A liquid ejecting head, wherein the opening of the concave portion is formed so as to have the shape according to claim 1.
複数の基板を接着剤で接合して機能性デバイスを製造する方法において、
互いに接着される基板同士の接合面の少なくとも一方に、余分な接着剤の逃げ用の領域となる凹部を形成し、
前記凹部の開口部の形状を、請求項1〜5の何れか記載の形状になるように形成した機能性デバイスの製造方法。

In a method of manufacturing a functional device by bonding a plurality of substrates with an adhesive,
On at least one of the bonding surfaces of the substrates to be bonded to each other, a recess that becomes a region for escape of excess adhesive is formed,
The manufacturing method of the functional device formed so that the shape of the opening part of the said recessed part might turn into the shape in any one of Claims 1-5.

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JP2017226143A (en) * 2016-06-22 2017-12-28 セイコーエプソン株式会社 Image recording method and inkjet ink composition
JP2018051955A (en) * 2016-09-29 2018-04-05 セイコーエプソン株式会社 Inkjet recording method, and method for controlling inkjet recording device
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JPH07323543A (en) * 1994-06-02 1995-12-12 Seiko Epson Corp Ink jet type recording head
JPH10304685A (en) * 1997-04-21 1998-11-13 Seiko Epson Corp Electrostatic actuator and ink jet head using it
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JP2018134801A (en) * 2017-02-22 2018-08-30 セイコーエプソン株式会社 Inkjet recording method and control method of inkjet recording device

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