JP2007098659A - Penetration method and method for manufacturing liquid jet head - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To readily and surely penetrate an insulation layer without raising the ejection pressure of gas. <P>SOLUTION: The insulation layer 93 is formed between a base substrate 10 having a first reference hole 16 passing therethrough in the thickness direction and a bonding substrate 30 which is bonded to one face side of the base substrate 10 and has a second reference hole 35 passing therethrough in the thickness direction provided at a region opposite to the first reference hole 16, the insulation layer 93 adapted to insulate the first reference hole 16 from the second reference hole 35. When a hole is formed through the insulation layer 93 by abutting gas ejected from an ejection nozzle 200 thereto, at least a part of an ejection region to which the gas is abutted is opposed to the first reference hole 16 or the second reference hole 35, the center of the inner circumference of the ejection nozzle 200 is shifted from the center of the inner circumference of the first reference hole 16 or the second reference hole 35 in the face direction of the base substrate 10, and then the hole is formed through the insulation layer 93. <P>COPYRIGHT: (C)2007,JPO&INPIT

Description

  The present invention relates to a penetrating method that penetrates an isolation layer between a first reference hole provided in a base substrate and a bonded substrate that is bonded to the base substrate and provided with a second reference hole, and a liquid jet that ejects liquid. More particularly, the present invention relates to a method for manufacturing an ink jet recording head that ejects ink.

  A part of the pressure generation chamber communicating with the nozzle opening for discharging ink droplets is constituted by a vibration plate, and the vibration plate is deformed by a piezoelectric element to pressurize the ink in the pressure generation chamber to discharge ink droplets from the nozzle opening. Two types of ink jet recording heads have been put into practical use: those using a longitudinal vibration mode piezoelectric actuator that extends and contracts in the axial direction of the piezoelectric element, and those using a flexural vibration mode piezoelectric actuator. As an example of using an actuator in a flexural vibration mode, for example, a uniform piezoelectric material layer is formed over the entire surface of the diaphragm by a film forming technique, and this piezoelectric material layer is formed into a pressure generating chamber by a lithography method. A device in which a piezoelectric element is formed so as to be cut into a corresponding shape and independent for each pressure generating chamber is known.

  In such an ink jet recording head, a configuration is disclosed in which a protective substrate provided with a piezoelectric element holding portion for protecting the piezoelectric element is bonded to the surface of the flow path forming substrate on the piezoelectric element side. Each member of the ink jet recording head is provided with a reference hole into which a reference pin for relative positioning of the flow path forming substrate and the protective substrate with other members such as a head case is inserted ( For example, see Patent Document 1).

  The reference hole provided in the flow path forming substrate is formed together with the pressure generating chamber by forming a thin film such as a piezoelectric element on one surface of the flow path forming substrate and then performing wet etching on the flow path forming substrate. The thin film provided on one surface of the flow path forming substrate remains as an isolation layer that separates the reference hole of the flow path forming substrate and the reference hole of the protective substrate. In order to penetrate this isolation layer, the gas jetted from the injection nozzle is brought into contact with the isolation layer.

  However, there is a problem that even if gas is injected from the injection nozzle at a position where the center of the injection nozzle is aligned with the center of the reference hole, the isolation layer cannot be penetrated.

  Moreover, when the pressure of the gas injected from the injection nozzle is increased in order to penetrate the isolation layer, there is a problem that the flow path forming substrate, the protective substrate and the like may be destroyed.

  Furthermore, if a pressure generation chamber and a reference hole are formed in the flow path forming substrate without forming an isolation layer on the flow path forming substrate, the etchant during wet etching will flow toward the protective substrate and etch the protective substrate. In addition, since there is a problem that the wiring film on the protective substrate is damaged, an isolation layer is necessary.

  Such a problem exists not only in a method for manufacturing an ink jet recording head that discharges ink droplets but also in a method for manufacturing a liquid ejecting head that discharges other liquids. Further, such a problem occurs not only in the method of manufacturing the liquid jet head, but also between the base substrate having a wide reference hole and the bonded substrate having the reference hole bonded to the base substrate. The same exists in the penetration method that penetrates the isolation layer that isolates the reference hole.

Japanese Patent Laying-Open No. 2005-067130 (pages 6 to 12, FIG. 4)

  In view of such circumstances, it is an object of the present invention to provide a penetrating method and a liquid ejecting head manufacturing method capable of easily and reliably penetrating a separating layer without increasing the gas jetting pressure.

According to a first aspect of the present invention for solving the above-described problem, a base substrate provided with a first reference hole penetrating in the thickness direction is bonded to one surface side of the base substrate and is relative to the first reference hole. An isolation layer that is provided between the bonding substrate provided with the second reference hole penetrating in the thickness direction in the region facing the first electrode and the second reference hole is sprayed from the spray nozzle. When penetrating the contacted gas, at least a part of the injection region in which the gas of the injection nozzle is injected is opposed to the first reference hole or the second reference hole, and the inner diameter of the injection nozzle is set. In the penetration method, the center is shifted from the center of the inner diameter of the first reference hole or the second reference hole in the surface direction of the base substrate to penetrate the isolation layer.
In the first aspect, the isolation layer can be easily and reliably penetrated without increasing the gas pressure.

A second aspect of the present invention is the penetrating method according to the first aspect, wherein an inner diameter of the injection nozzle is larger than inner diameters of the first reference hole and the second reference hole.
In the second aspect, it is possible to prevent burrs from occurring when the isolation layer penetrates.

According to a third aspect of the present invention, in the first or second aspect, the surface of the base substrate between the end portion of the inner surface of the injection nozzle and the end portion of the inner surface of the first reference hole or the second reference hole. The distance in the direction is 0 to 110% of the inner diameter of the injection nozzle.
In the third aspect, by defining the position of the injection nozzle, it is possible to easily and reliably penetrate the isolation layer.

According to a fourth aspect of the present invention, in the third aspect, the end of the inner surface of the injection nozzle is flush with the end of the inner surface of the first reference hole or the second reference hole. It is in the penetration method.
In the fourth aspect, by defining the position of the injection nozzle, it is possible to easily and reliably penetrate the isolation layer.

In the fifth aspect of the present invention, a pressure generating chamber communicating with a nozzle opening for ejecting liquid and a first reference hole penetrating in the thickness direction and inserting a reference pin used for positioning with another member are formed. Forming a separation layer in at least a region where the first reference hole is formed on one surface of a flow path forming substrate having pressure generating means for generating a pressure change in the pressure generating chamber, and the pressure generating chamber A step of bonding a protective substrate having a second reference hole penetrating in the thickness direction on the one surface thereof, and forming the pressure generating chamber and the first reference hole from the other surface side of the flow path forming substrate. A step and at least a part of an injection region where gas is injected from the injection nozzle from which the gas is injected are opposed to the first reference hole or the second reference hole, and the center of the inner diameter of the injection nozzle is the first Center of inner diameter of reference hole or second reference hole Slide the surface direction of al the flow path forming substrate in the method of manufacturing a liquid jet head characterized by including the step of penetrating said isolation layer is brought into contact with the gas to the isolation layer.
In the fifth aspect, it is possible to easily and surely penetrate the isolation layer without increasing the gas pressure, and it is possible to prevent breakage of the flow path forming substrate and the protective substrate. In addition, the isolation layer can prevent the etchant from flowing out to the protective substrate side when forming the pressure generating chamber or the like on the flow path forming substrate, and the protective substrate and the wiring on the protective substrate are etched. Can be prevented.

According to a sixth aspect of the present invention, in the fifth aspect, the liquid ejecting head according to the fifth aspect is characterized in that the isolation layer includes a lead wiring led out from the pressure generating means to the surface of the flow path forming substrate. Is in the way.
In the sixth aspect, the isolation layer including the lead-out wiring can reliably prevent the etchant from flowing out to the protective substrate side, and can easily and reliably penetrate the isolation layer including the lead-out wiring.

According to a seventh aspect of the present invention, in the fifth or sixth aspect, before the step of penetrating the isolation layer, a protective film having liquid resistance is formed on the inner surface of the pressure generation chamber, and the isolation layer In the method of manufacturing a liquid ejecting head, including the protective film.
In the seventh aspect, the isolation layer including the protective film can surely prevent the etching solution from flowing out to the protective substrate side, and can easily and reliably penetrate the isolation layer including the protective film.

Hereinafter, the present invention will be described in detail based on embodiments.
(Embodiment 1)
FIG. 1 is an exploded perspective view of an ink jet recording head and a head case according to Embodiment 1 of the present invention, FIG. 2 is a plan view of the ink jet recording head, and FIG. 3 is an AA view of FIG. 'Cross sectional view and BB' sectional view.

  As shown in FIG. 1, the ink jet recording head 1 of this embodiment is fixed to a head case 2 with an adhesive or the like. The ink jet recording head 1 and the head case 2 will be described in detail later, but a reference hole 3 provided in the head case 2 and a first reference hole 16 provided in each member constituting the ink jet recording head 1. The reference pin 4 is inserted into the second reference hole 35, the third reference hole 22, and the fourth reference hole 45 to be positioned and fixed.

  Here, the ink jet recording head 1 will be described with reference to FIGS. As shown in the figure, the flow path forming substrate 10 serving as the base substrate is made of a silicon single crystal substrate having a plane orientation (110) in this embodiment, and the both surfaces are made of silicon dioxide previously formed by thermal oxidation. An elastic film 50 having a thickness of 0.5 to 2 μm is formed.

  The flow path forming substrate 10 is provided with two rows of pressure generating chambers 12 partitioned by a plurality of partition walls by anisotropic etching from the other side, and each pressure generating chamber is disposed outside in the longitudinal direction. A communication portion 13 constituting a part of the reservoir 100 serving as a common ink chamber is formed for each of the 12 columns, and is communicated with one end portion in the longitudinal direction of each pressure generation chamber 12 via an ink supply path 14. The ink supply path 14 is formed with a narrower width than the pressure generation chamber 12, and maintains a constant flow path resistance of ink flowing into the pressure generation chamber 12 from the communication portion 13.

  Further, in the flow path forming substrate 10, first reference holes 16 penetrating in the thickness direction are formed at the corners on both ends in the juxtaposed direction of the pressure generating chambers 12. In the present embodiment, a total of two first reference holes are provided, one at each end of the flow path forming substrate 10 in the juxtaposed direction of the pressure generating chambers 12.

  In the present embodiment, the first reference hole 16 is formed by anisotropic etching from the other surface side of the flow path forming substrate 10. For this reason, the opening of the first reference hole 16 of the present embodiment is formed in a rhombus shape. The shape of the first reference hole 16 is not particularly limited to this, and for example, the opening may be a circle or an ellipse.

Here, a material having ink resistance, for example, tantalum oxide such as tantalum pentoxide (Ta ₂ O ₅ ) is formed on the inner surface of the pressure generating chamber 12, the communication portion 13, and the ink supply passage 14 of the flow path forming substrate 10. A protective film 15 made of is provided with a thickness of about 50 nm. The ink resistance referred to here is etching resistance against alkaline ink. In the present embodiment, the protective film 15 is also provided on the surface of the flow path forming substrate 10 on the side where the pressure generating chambers 12 and the like are open, that is, the bonding surface to which the nozzle plate 20 is bonded. Of course, since the ink is not substantially in contact with such a region, the protective film 15 may not be provided.

The material of the protective film 15 is not limited to tantalum oxide, and depending on the pH value of the ink used, for example, zirconium oxide (ZrO ₂ ), nickel (Ni), chromium (Cr), or the like is used. Also good.

Further, on the opening surface side of the flow path forming substrate 10, a protective film 51 used as a mask when forming the pressure generating chambers 12 is provided on the side opposite to the ink supply path 14 of each pressure generating chamber 12. A nozzle plate 20 having a communicating nozzle opening 21 is fixed at room temperature via an adhesive, a heat-welded film, or the like. The nozzle plate 20 has a thickness of, for example, 0.01 to 1 mm, a linear expansion coefficient of 300 ° C. or less, for example, 2.5 to 4.5 [× 10 ⁻⁶ / ° C.] It consists of stainless steel (SUS). The nozzle plate 20 entirely covers one surface of the flow path forming substrate 10 on one surface, and also serves as a reinforcing plate that protects the silicon single crystal substrate from impact and external force.

  Further, the nozzle plate 20 is provided with a third reference hole 22 communicating with the first reference hole 16 of the flow path forming substrate 10. For example, when the nozzle plate 20 is made of metal, the third reference hole 22 is formed by mechanically punching with the nozzle opening 21 with a punch or the like.

  On the other hand, an elastic film 50 made of silicon dioxide and having a thickness of, for example, about 1.0 μm is formed on the side opposite to the opening surface of the flow path forming substrate 10. An insulator film 55 made of zirconium oxide or the like and having a thickness of, for example, about 0.4 μm is formed. Further, the insulator film 55 is made of platinum, iridium or the like and has a thickness of, for example, a lower electrode film 60 of about 0.2 μm and lead zirconate titanate (PZT) or the like. A piezoelectric layer 300 is formed by laminating a piezoelectric layer 70 of 1.0 μm and an upper electrode film 80 made of iridium or the like, for example, having a thickness of about 0.05 μm by a process described later. Here, the piezoelectric element 300 refers to a portion including the lower electrode film 60, the piezoelectric layer 70, and the upper electrode film 80. In general, one electrode of the piezoelectric element 300 is used as a common electrode, and the other electrode and the piezoelectric layer 70 are patterned for each pressure generating chamber 12. In addition, here, a portion that is configured by any one of the patterned electrodes and the piezoelectric layer 70 and in which piezoelectric distortion is generated by applying a voltage to both electrodes is referred to as a piezoelectric active portion. In this embodiment, the lower electrode film 60 is a common electrode of the piezoelectric element 300, and the upper electrode film 80 is an individual electrode of the piezoelectric element 300. However, there is no problem even if this is reversed for the convenience of the drive circuit and wiring. In any case, a piezoelectric active part is formed for each pressure generating chamber 12. Further, here, the piezoelectric element 300 and the vibration plate that is displaced by driving the piezoelectric element 300 are collectively referred to as a piezoelectric actuator. In the above-described example, the elastic film 50, the insulator film 55, and the lower electrode film 60 function as a diaphragm. However, the present invention is not limited to this, and for example, the elastic film 50 and the insulator film 55 are provided. Instead, only the lower electrode film 60 may act as a diaphragm.

  In addition, on the upper electrode film 80 of each piezoelectric element 300 as described above, a lead electrode 90 which is a lead wiring composed of an adhesion layer 91 made of titanium tungsten (TiW) and a metal layer 92 made of gold (Au). Are connected, and a voltage is selectively applied to each piezoelectric element 300 via the lead electrode 90. In addition, an adhesion layer 91 and a metal layer which are the same layer as the lead electrode 90 and are not continuous with the lead electrode 90 are also formed on the insulating film 55 at the peripheral edge of the first reference hole 16 provided in the flow path forming substrate 10. A part of the isolation layer 93 made of 92 is provided.

  On the flow path forming substrate 10 on which such a piezoelectric element 300 is formed, that is, on the lower electrode film 60, the elastic film 50, and the lead electrode 90, there is a reservoir portion 31 that constitutes at least a part of the reservoir 100. The protective substrate 30 serving as a bonded substrate is bonded. In the present embodiment, the reservoir portion 31 is formed through the protective substrate 30 in the thickness direction and across the width direction of the pressure generation chamber 12. As described above, the communication portion 13 of the flow path forming substrate 10. The reservoir 100 is configured as a common ink chamber for the pressure generation chambers 12.

  A piezoelectric element holding portion 32 having a space that does not hinder the movement of the piezoelectric element 300 is provided in a region of the protective substrate 30 that faces the piezoelectric element 300.

  As such a protective substrate 30, it is preferable to use substantially the same material as the coefficient of thermal expansion of the flow path forming substrate 10, for example, glass, ceramic material, etc. In this embodiment, the same material as the flow path forming substrate 10 is used. The silicon single crystal substrate was used.

  The protective substrate 30 is provided with a through hole 33 that penetrates the protective substrate 30 in the thickness direction. The vicinity of the end portion of the lead electrode 90 drawn from each piezoelectric element 300 is provided so as to be exposed in the through hole 33.

  Further, a second reference hole 35 penetrating in the thickness direction is provided in a region of the protective substrate 30 facing the first reference hole 16 of the flow path forming substrate 10. The second reference hole 35 is formed with the same inner diameter as the first reference hole 16 provided in the flow path forming substrate 10. In the present embodiment, since the silicon single crystal substrate is used as the protective substrate 30, the second reference hole 35 can be formed by anisotropically etching the protective substrate 30. The second reference hole 35 is formed in a rhombus shape like the first reference hole.

  In addition, driving circuits 110 for driving the piezoelectric elements 300 are fixed to both sides of the through holes 33 on the protective substrate 30, that is, to regions corresponding to the respective rows of the pressure generating chambers 12. As the drive circuit 110, for example, a circuit board, a semiconductor integrated circuit (IC), or the like can be used. The drive circuit 110 and the lead electrode 90 are electrically connected via a connection wiring (not shown) made of a conductive wire such as a bonding wire. As shown in FIG. 1, an external wiring 111 to which an external print signal is input is electrically connected to the drive circuit 110.

  In addition, a compliance substrate 40 including a sealing film 41 and a fixing plate 42 is bonded onto the protective substrate 30. Here, the sealing film 41 is made of a material having low rigidity and flexibility (for example, a polyphenylene sulfide (PPS) film having a thickness of 6 μm), and the sealing film 41 seals one surface of the reservoir portion 31. It has been stopped. The fixing plate 42 is made of a hard material such as metal (for example, stainless steel (SUS) having a thickness of 30 μm). Since the region of the fixing plate 42 facing the reservoir 100 is an opening 43 that is completely removed in the thickness direction, one surface of the reservoir 100 is sealed only with a flexible sealing film 41. Has been.

  An ink introduction port 44 for supplying ink to the reservoir 100 is formed on the compliance substrate 40 on the outer side of the central portion of the reservoir 100 in the longitudinal direction.

  Further, the compliance substrate 40 is provided with a fourth reference hole 45 communicating with the second reference hole 35 of the protective substrate 30.

  As shown in FIG. 1, the ink jet recording head 1 including the flow path forming substrate 10, the protective substrate 30, the compliance substrate 40, and the nozzle plate 20 is held by the head case 2 bonded to the compliance substrate 40 side. . At this time, the reference pin 4 is inserted into the first reference hole 22, the second reference hole 35, the third reference hole 22, the fourth reference hole 45, and the reference hole 3 of the head case 2 of the ink jet recording head 1. Both are positioned and fixed.

  In such an ink jet recording head of this embodiment, ink is taken in from an ink introduction port 44 connected to an external ink supply means (not shown), and the interior is filled with ink from the reservoir 100 to the nozzle opening 21. In accordance with the recording signal from 110, a voltage is applied between each of the lower electrode film 60 and the upper electrode film 80 corresponding to the pressure generating chamber 12, and the elastic film 50, the lower electrode film 60, and the piezoelectric layer 70 are bent and deformed. By doing so, the pressure in each pressure generating chamber 12 increases, and ink droplets are ejected from the nozzle openings 21.

  Hereinafter, a method for manufacturing such an ink jet recording head will be described in detail with reference to FIGS. 4 to 7 are cross-sectional views showing the manufacturing process of the ink jet recording head.

  First, as shown in FIG. 4A, a flow path forming substrate 10 made of a silicon single crystal substrate is thermally oxidized in a diffusion furnace at about 1100 ° C., and a silicon dioxide film serving as an elastic film 50 and a protective film 51 is formed on the surface. 52 is formed.

Next, as shown in FIG. 4B, an insulator film 55 made of zirconium oxide is formed on the elastic film 50 (silicon dioxide film 52). Specifically, after forming a zirconium (Zr) layer on the elastic film 50 (silicon dioxide film 52) by, for example, sputtering, the zirconium layer is thermally oxidized in a diffusion furnace at 500 to 1200 ° C., for example. Thus, the insulator film 55 made of zirconium oxide (ZrO ₂ ) is formed.

  Next, as shown in FIG. 4C, for example, after the lower electrode film 60 is formed by laminating platinum and iridium on the insulator film 55, the lower electrode film 60 is patterned into a predetermined shape.

  Next, as shown in FIG. 4D, for example, a piezoelectric layer 70 made of lead zirconate titanate (PZT) or the like and an upper electrode film 80 made of iridium, for example, are formed on the entire surface of the flow path forming substrate 10. Then, the piezoelectric element 300 is formed by patterning in a region facing each pressure generating chamber 12. As a material of the piezoelectric layer 70 constituting the piezoelectric element 300, for example, a ferroelectric piezoelectric material such as lead zirconate titanate (PZT) or a metal such as niobium, nickel, magnesium, bismuth or yttrium is used. An added relaxor ferroelectric or the like is used. The method for forming the piezoelectric layer 70 is not particularly limited. For example, in this embodiment, a so-called sol in which a metal organic substance is dissolved and dispersed in a catalyst is applied, dried, gelled, and further fired at a high temperature. The piezoelectric layer 70 was formed by using a so-called sol-gel method for obtaining a piezoelectric layer 70 made of an oxide.

  Next, as shown in FIG. 6A, the insulator film 55 and the elastic film 50 are patterned, and the elastic film 50 and the insulator are formed in the region where the first reference hole 16 of the flow path forming substrate 10 is formed. An exposed hole 53 that penetrates the film 55 and exposes the surface of the flow path forming substrate 10 is formed.

  Next, as shown in FIG. 4E, lead electrodes 90 are formed. Specifically, the metal layer 92 is formed through an adhesion layer 91 for ensuring adhesion over the entire surface of the flow path forming substrate 10 serving as the base substrate. Then, a mask pattern (not shown) made of, for example, a resist is formed on the metal layer 92, and the lead electrode 90 is formed by patterning the metal layer 92 and the adhesion layer 91 for each piezoelectric element 300 through the mask pattern. Form. At this time, as shown in FIG. 6B, the first reference hole 16 is formed by leaving the adhesion layer 91 and the metal layer 92 in the region where the first reference hole 16 is provided, that is, in the exposed hole 53. In the region to be formed, an isolation layer 93 that is the same layer as the adhesion layer 91 and the metal layer 92 and is discontinuous with the lead electrode 90 is formed. In the present embodiment, the isolation layer 93 composed of the adhesion layer 91 and the metal layer 92 is formed over and around the region where the first reference hole 16 is formed.

  The main material of the metal layer 92 constituting the lead electrode 90 is not particularly limited as long as it is a material having relatively high conductivity, and examples thereof include gold (Au), aluminum (Al), and copper (Cu). In this embodiment, gold (Au) is used. The material of the adhesion layer 91 may be any material that can ensure the adhesion of the metal layer 92. Specifically, titanium (Ti), titanium tungsten compound (TiW), nickel (Ni), chromium (Cr ) Or a nickel chromium compound (NiCr), etc., and in this embodiment, a titanium tungsten compound (TiW) was used. In the present embodiment, the adhesion layer 91 is formed with a thickness of about 500 nm, and the metal layer 92 is formed with a thickness of about 1.2 μm.

  Next, as shown in FIG. 5A and FIG. 6C, the protective substrate 30 serving as a bonding substrate is bonded onto the flow path forming substrate 10 with an adhesive 36. Here, in the protective substrate 30, a reservoir portion 31, a piezoelectric element holding portion 32, a through hole 33, and a second reference hole 35 are formed in advance. The protective substrate 30 is, for example, a silicon single crystal substrate having a thickness of about 400 μm. The reservoir portion 31, the piezoelectric element holding portion 32, the through hole 33, and the second reference hole 35 are wet-etched from the protective substrate 30. It is formed by doing. Moreover, the rigidity of the flow path forming substrate 10 is remarkably improved by bonding the protective substrate 30 to the flow path forming substrate 10.

  Next, as shown in FIGS. 5B and 6D, the silicon dioxide film 52 on the opposite side of the surface on which the piezoelectric element 300 of the flow path forming substrate 10 is formed is patterned into a predetermined shape. By forming the protective film 51 and performing anisotropic etching (wet etching) on the flow path forming substrate 10 using an alkaline solution such as KOH using the protective film 51 as a mask, the pressure generating chambers 12, The communication part 13, the ink supply path 14, and the first reference hole 16 are formed.

  At this time, as shown in FIG. 6D, since the first reference hole 16 is sealed by the adhesion layer 91 and the metal layer 92, the etching solution is supplied to the protective substrate 30 through the first reference hole 16. There is no leakage. Similarly, since the elastic film 50 and the insulator film 55 exist between the reservoir unit 31 and the communication unit 13, the etching solution does not flow out to the protective substrate 30 side. As a result, the protective substrate 30 can be prevented from being eroded by the etchant, and the etchant can adhere to the electrical wiring or the like on which the drive circuit 110 provided on the surface of the protective substrate 30 is mounted. Therefore, it is possible to prevent the occurrence of defects such as disconnection.

  When forming such a pressure generation chamber 12 or the like, the surface of the protective substrate 30 opposite to the flow path forming substrate 10 side is made of a material having alkali resistance, such as PPS (polyphenylene sulfide), PPTA (polypropylene). It may be further sealed with a sealing film made of paraphenylene terephthalamide) or the like. Thereby, defects such as disconnection of the electrical wiring provided on the surface of the protective substrate 30 can be more reliably prevented.

  Next, as shown in FIG. 5C and FIG. 7A, liquid resistance is applied to the inner surfaces of the pressure generation chamber 12, the communication portion 13, the ink supply path 14, the first reference hole 16, and the like of the flow path forming substrate 10. A protective film 15 made of a material having a property (ink resistance), for example, tantalum pentoxide, is formed by, for example, a CVD method. At this time, since the adhesion layer 91 is exposed in the first reference hole 16, the protective film 15 is also formed on the adhesion layer 91. That is, in the present embodiment, the isolation layer 93 includes the metal layer 92, the adhesion layer 91, and the protective film 15. In the present embodiment, the protective film 15 is formed with a thickness of 100 nm. For this reason, the isolation layer 93 has a thickness of 1.8 μm.

Next, as shown in FIG. 7B, the first reference hole 16 and the second reference hole 35 are communicated with each other by penetrating the isolation layer 93. Specifically, a gas such as nitrogen gas (N ₂ ) is injected from the injection nozzle 200, and the injected gas is brought into contact with the isolation layer 93 to penetrate the isolation layer 93. In the present embodiment, the gas injected from the injection nozzle 200 is brought into contact with the isolation layer 93 from the protective substrate 30 side. At this time, at least a part of the region where the gas of the injection nozzle 200 is injected is in a range opposite to the second reference hole 35, and the center of the injection nozzle 200 extends from the center of the second reference hole 35 to the flow path forming substrate. This is done by shifting in the 10 plane direction. The amount of gas injected from the injection nozzle 200 is substantially the same in the vicinity of the central portion of the injection nozzle 200 and in the peripheral region. Thereby, the isolation layer 93 can be penetrated without increasing the gas injection pressure from the injection nozzle 200.

  In addition, by making the inner diameter of the injection nozzle 200 larger than the first reference hole 16 and the second reference hole 35, it is possible to prevent the occurrence of burrs when penetrating the isolation layer 93.

Here, as shown in FIG. 2 with the center of the injection nozzle 200 from the center of the second reference hole 35, the longitudinal direction of the pressure generation chamber 12 is the X direction, and the parallel direction of the pressure generation chambers 12 is the Y direction. The penetration state when moving 0.1 mm each in the Y direction was observed. The result is shown in FIG. The inner diameter of the injection nozzle 200 is φ1.12 mm, and the inner diameters of the first reference hole 16 and the second reference hole 35 are φ0.8 mm. Further, as the gas to be injected from the injection nozzle 200, a nitrogen gas _{(N 2),} the injection pressure of the gas injected from the injection nozzle 200 was 0.32～0.22MPa. Further, the gas injected from the injection nozzle 200 was brought into contact with the isolation layer 93 for 3 seconds. Note that the description of “0.32 to 0.22 MPa” for the gas injection pressure does not mean that a substantial difference in the injection pressure is provided between the vicinity of the central portion of the injection nozzle 200 and its peripheral region. This indicates only that penetration is possible even at any injection pressure between “.32 and 0.22 MPa”, and if the flow path forming substrate 10 and the protective substrate 30 are not destroyed, this injection It is not limited to pressure.

  As shown in FIG. 8, when the center of the injection nozzle 200 was aligned with the center of the second reference hole 35, the isolation layer 93 could not be penetrated. On the other hand, when the center of the injection nozzle 200 was shifted from the center of the second reference hole 35, the isolation layer 93 could be penetrated. In particular, the isolation layer 93 could be satisfactorily penetrated in the region A of FIG. Thus, the distance in the surface direction of the flow path forming substrate 10 between the end of the inner diameter of the injection nozzle 200 that can penetrate the isolation layer 93 and the end of the inner diameter of the second reference hole 35 is the second reference hole. The inner diameter of 35 is preferably 0 to 110%.

  In practice, a large number of chips are simultaneously formed on a single wafer by the above-described series of film formation and anisotropic etching, and after the process is completed, a single chip-sized flow path is formed as shown in FIG. The ink jet recording head 1 is formed by dividing each substrate 10. Thus, the wafer has the elastic film 50 and the insulator film 55 between the perforation and the reservoir portion 31 and the communication portion 13 that are used when the wafer is divided. It is preferable that the gas of the nozzle 200 abuts on the perforations, the elastic film 50 and the insulator film 55 so that they are not penetrated. That is, as shown in FIG. 2, since the second reference hole 35 has perforations in the + X direction and the + Y direction and the reservoir portion 31 is in the -Y direction, the movement direction of the injection nozzle 200 is the -X direction. Preferably, as shown in FIG. 8, it is preferable to move −0.7 mm in the X direction.

  After penetrating through the isolation layer 93 in this way, as shown in FIG. 3A, the elastic film 50 and the insulator film 55 between the reservoir portion 31 and the communicating portion 13 are penetrated to communicate with each other. Thereafter, the nozzle plate 20 having the nozzle openings 21 formed on the surface of the flow path forming substrate 10 opposite to the protective substrate 30 is bonded, and the compliance substrate 40 is bonded to the protective substrate 30, so that FIG. An ink jet recording head as shown in FIG.

  At this time, when the nozzle plate 20 and the compliance substrate 40 are positioned and bonded to the bonded body in which the flow path forming substrate 10 and the protective substrate 30 are bonded, the first reference hole 16 and the protection of the flow path forming substrate 10 are protected. By inserting the reference pin 4 into the second reference hole 35 of the substrate 30 and the third reference hole 22 of the nozzle plate 20 or the fourth reference hole 45 of the compliance substrate 40, each member can be positioned satisfactorily. Can be fixed.

  In addition, the ink jet recording head formed in this manner is provided with a reference pin in the reference hole 3 provided in the head case 2 bonded to the protective substrate 30 side and the reference hole provided in the ink jet recording head 1. It is positioned and fixed by inserting.

  As described above, according to the present invention, the isolation layer 93 provided between the flow path forming substrate 10 provided with the first reference hole 16 and the protective substrate 30 provided with the second reference hole is gas-filled. By shifting the center of the inner diameter of the injection nozzle 200 from which the gas is injected and the center of the inner diameter of the first reference hole 16 when penetrating through contact, the separation layer 93 can be easily and reliably penetrated. Can do. Thereby, there is no need to increase the gas injection pressure, and it is possible to prevent the flow path forming substrate 10 and the protection substrate 30 from being destroyed by high-pressure gas injection. Further, by providing the isolation layer 93, the etching solution can be prevented from flowing out to the protective substrate 30 side when the pressure generating chamber 12 and the like are formed on the flow path forming substrate 10 by etching. In addition, it is possible to prevent a not-shown wiring or the like provided on the protective substrate 30 from being destroyed.

(Other embodiments)
Although the embodiments of the present invention have been described above, the basic configuration of the ink jet recording head is not limited to the above. For example, in the first embodiment described above, the inkjet recording head 1 in which the pressure generating chambers 12 are arranged in parallel on the flow path forming substrate 10 is illustrated, but the pressure generating chambers 12 may be one row, or a plurality of rows. It may be.

  Further, for example, in the above-described first embodiment, the thin film type ink jet recording head manufactured by applying the film formation and the lithography method is taken as an example, but of course, the present invention is not limited thereto. The present invention can also be applied to a thick film type ink jet recording head formed by a method such as affixing.

  The pressure generating means for ejecting ink droplets from the nozzle openings has been described using a piezoelectric element. However, the pressure generating means is not limited to a piezoelectric element. For example, a heating element is arranged in the pressure generating chamber, and the heating element is arranged. So that droplets are ejected from the nozzle opening by bubbles generated by the heat generated by the nozzle, and so-called static electricity is generated between the diaphragm and the electrode, and the diaphragm is deformed by electrostatic force to eject the droplet from the nozzle opening. An electrostatic actuator or the like can be used.

  In the first embodiment described above, an ink jet recording head has been described as an example of a liquid ejecting head. However, the present invention is widely intended for the entire manufacturing method of a liquid ejecting head, and a liquid other than ink is used. Of course, the present invention can also be applied to a method of manufacturing a liquid jet head for jetting. Other liquid ejecting heads include, for example, various recording heads used in image recording apparatuses such as printers, color material ejecting heads used in the manufacture of color filters such as liquid crystal displays, organic EL displays, and FEDs (surface emitting displays). Examples thereof include an electrode material ejection head used for electrode formation, a bioorganic matter ejection head used for biochip production, and the like. Further, the present invention is not limited to the method of manufacturing the liquid jet head, and the penetrating through the isolation layer existing between the base substrate provided with the first reference hole and the bonding substrate provided with the second reference hole. It can be widely applied to the method.

1 is an exploded perspective view of a recording head and a head case according to Embodiment 1 of the invention. FIG. 3 is a plan view of the recording head according to the first embodiment of the invention. FIG. 3 is a cross-sectional view of the recording head according to the first embodiment of the invention. FIG. 5 is a cross-sectional view illustrating the method for manufacturing the recording head according to the first embodiment of the invention. FIG. 5 is a cross-sectional view illustrating the method for manufacturing the recording head according to the first embodiment of the invention. FIG. 4 is a plan view illustrating the method for manufacturing the recording head according to the first embodiment of the invention. FIG. 4 is a plan view illustrating the method for manufacturing the recording head according to the first embodiment of the invention. It is a table | surface which shows the penetration condition of the isolation layer which concerns on other embodiment of this invention.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 Inkjet recording head, 2 Head case, 3 Reference hole, 4 Reference pin, 10 Flow path formation board, 12 Pressure generation chamber, 16 1st reference hole, 20 Nozzle plate, 21 Nozzle opening, 30 Protection board, 31 Reservoir part 32 Piezoelectric element holder, 35 Second reference hole, 40 Compliance substrate, 60 Lower electrode film, 70 Piezoelectric layer, 80 Upper electrode film, 90 Lead electrode, 93 Isolation layer, 100 Reservoir, 110 Drive circuit, 111 External wiring , 200 injection nozzle, 300 piezoelectric element

Claims (7)

A base substrate provided with a first reference hole penetrating in the thickness direction, and a second reference hole bonded in one surface side of the base substrate and penetrating in a thickness direction in a region facing the first reference hole When the gas jetted from the jet nozzle is brought into contact with and penetrates the isolation layer provided between the bonding substrate provided with the first reference hole and the second reference hole, the jetting is performed. At least a part of the injection region where the gas of the nozzle is injected is opposed to the first reference hole or the second reference hole, and the center of the inner diameter of the injection nozzle is the inner diameter of the first reference hole or the second reference hole. And penetrating the isolation layer from the center of the substrate in the direction of the surface of the base substrate. The penetration method according to claim 1, wherein an inner diameter of the injection nozzle is larger than inner diameters of the first reference hole and the second reference hole. 3. The distance in the surface direction of the base substrate between the end portion of the inner surface of the injection nozzle and the end portion of the inner surface of the first reference hole or the second reference hole is defined as an inner diameter of the injection nozzle. 0 to 110% of the penetration method characterized by the above-mentioned. The penetrating method according to claim 3, wherein an end portion of the inner surface of the injection nozzle is flush with an end portion of the inner surface of the first reference hole or the second reference hole. A pressure generating chamber that communicates with a nozzle opening for ejecting liquid and a first reference hole that penetrates in the thickness direction and is inserted into a reference pin that is used for positioning with another member are formed and pressure is applied to the pressure generating chamber Forming a separation layer in at least a region where the first reference hole is formed on one surface of the flow path forming substrate having pressure generating means for causing a change; and in the thickness direction on the one surface of the pressure generating chamber. A step of bonding a protective substrate formed with a penetrating second reference hole, a step of forming the pressure generation chamber and the first reference hole from the other surface side of the flow path forming substrate, and an injection of gas At least a part of the injection region where the gas of the nozzle is injected is opposed to the first reference hole or the second reference hole, and the center of the inner diameter of the injection nozzle is the inner diameter of the first reference hole or the second reference hole. From the center of the flow path forming substrate Method of manufacturing a liquid-jet head characterized by comprising the step of penetrating said isolation layer is brought into contact with the gas to the isolation layer is shifted in the direction. 6. The method of manufacturing a liquid ejecting head according to claim 5, wherein the isolation layer includes a lead-out wiring led out from the pressure generating unit to the surface of the flow path forming substrate. 7. The method according to claim 5, wherein a protective film having liquid resistance is formed on an inner surface of the pressure generating chamber before the step of penetrating the separating layer, and the separating layer includes the protective film. A method for manufacturing a liquid jet head.

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