JP4911301B2 - Micro device manufacturing method and liquid jet head manufacturing method - Google Patents

Description

  The present invention relates to a microdevice manufacturing method for forming a microdevice by anisotropically etching a silicon substrate, and more particularly, a liquid for manufacturing a substrate constituting a liquid ejecting head that ejects liquid by the microdevice manufacturing method. The present invention relates to a method for manufacturing an ejection head.

  As an ink jet recording head which is a typical example of a microdevice such as a liquid ejecting head, for example, a pressure generating chamber communicating with a nozzle opening and a communicating portion communicating with the pressure generating chamber are formed, and one surface thereof Some include a flow path forming substrate provided with a piezoelectric element on the side, and a sealing substrate on which a reservoir portion that forms a part of the reservoir is formed together with a communication portion of the flow path forming substrate. As the flow path forming substrate and the sealing substrate, for example, a silicon single crystal substrate having a crystal plane orientation of (110) plane is used, and these substrates are interposed through a mask having an opening that opens in a parallelogram. It was formed by anisotropic etching (wet etching) (see, for example, Patent Document 1).

International Publication No. 2004/007206 (FIG. 12, pages 24-25, etc.)

  However, when a defect occurs in the mask that forms the partition walls defining the plurality of pressure generation chambers, the partition wall is etched starting from the defect, and a desired partition wall cannot be obtained. In particular, if the partition wall defining the pressure generating chamber of the flow path forming substrate is etched, there is a problem that the displacement characteristic of the diaphragm is adversely affected and the displacement characteristic of the piezoelectric element is deteriorated.

  Such a problem exists not only in a method of manufacturing an ink jet recording head that discharges ink, but also in a method of manufacturing a microdevice represented by a method of manufacturing a liquid ejecting head that ejects liquid other than ink. .

  In view of such circumstances, it is an object of the present invention to provide a method for manufacturing a micro device and a method for manufacturing a liquid jet head that can perform desired fine processing by anisotropic etching of a substrate.

According to an embodiment of the present invention for solving the above-described problem, a mask having an opening is provided on the surface of a substrate made of crystalline silicon having a crystal plane orientation of (100) plane or (110) plane, and the substrate is interposed through the mask. When forming a recess having a partition whose surface is a (111) plane in a region corresponding to the opening of the substrate by anisotropic etching, the mask is extended from the region to be the partition. The substrate is gradually etched together with the substrate from one starting portion to widen the opening area of the opening, and a region other than the starting portion on the outer periphery is surrounded by a plane along the (111) plane of the crystal plane orientation of the substrate A microdevice manufacturing method is characterized in that a plurality of corrected patterns are provided.
In this aspect, by providing a correction pattern that is removed by etching, even if a defect occurs in the mask, the etching of the partition wall starting from the defect can be stopped at the correction pattern. Accordingly, the partition wall can be formed with high accuracy by restricting the partition wall from being greatly etched.

  Here, it is preferable that a length from the start portion of the correction pattern to a region serving as the partition of the mask is defined based on an etching time of the concave portion. According to this, if the correction pattern disappears earlier than the etching time, the etching starting from the defect will not be stopped by the correction pattern. Therefore, by defining the length of the correction pattern, the defect is the starting point. Etching can be stopped reliably.

  Further, it is preferable that the correction pattern is provided by being bent in the plane of the substrate. According to this, since the correction pattern can be provided in a space-saving manner, the etching adjustment can be easily performed using the correction pattern.

  In addition, the correction pattern includes a linear first linear portion extending from the region to be the partition wall, and a second linear portion provided by being bent in the plane of the substrate from the first linear portion. It is preferable to be configured. According to this, the correction pattern can be provided in a space-saving manner, and the correction pattern can be formed easily and with high accuracy without complicating the correction pattern.

According to another aspect of the present invention, a flow path forming substrate in which a liquid flow path communicating with a nozzle opening for ejecting liquid is defined by a partition is formed by the method for manufacturing a microdevice according to the above aspect. And a manufacturing method of the liquid jet head.
In this aspect, the partition wall can be formed with high precision, and the etching is not excessively etched until the partition wall reaches the diaphragm by etching starting from the defect, thereby preventing the vibration characteristics of the diaphragm from changing. Thus, the displacement characteristics of the piezoelectric element can be made uniform.

Hereinafter, the present invention will be described in detail based on embodiments.
(Embodiment 1)
FIG. 1 is an exploded perspective view of an ink jet recording head which is an example of a liquid ejecting head according to Embodiment 1 of the present invention, and FIG. 2 is a plan view of FIG. As shown in the drawing, a flow path forming substrate 10 which is a micro device of the present embodiment is composed of a silicon single crystal substrate having a plane orientation (110) in the present embodiment, and one surface thereof is preliminarily made of silicon dioxide by thermal oxidation. An elastic film 50 having a thickness of 0.5 to 2 μm is formed.

  In the flow path forming substrate 10, pressure generating chambers 12 partitioned by a plurality of partition walls 11 are arranged in parallel in the width direction (short direction) by anisotropic etching from the other surface side. In addition, an ink supply path 14 and a communication path 15 are partitioned by a partition wall 11 on one end side in the longitudinal direction of the pressure generating chamber 12 of the flow path forming substrate 10. In addition, a communication portion 13 constituting a part of the reservoir 100 serving as an ink chamber (liquid chamber) common to the pressure generation chambers 12 is formed at one end of the communication passage 15.

  The ink supply path 14 communicates with one end side in the longitudinal direction of the pressure generation chamber 12 and has a smaller cross-sectional area than the pressure generation chamber 12. For example, in the present embodiment, the ink supply path 14 has a width smaller than the width of the pressure generation chamber 12 by narrowing the flow path on the pressure generation chamber 12 side between the reservoir 100 and each pressure generation chamber 12 in the width direction. The flow path resistance of the ink flowing into the pressure generating chamber 12 from the communication portion 13 is kept constant.

  In other words, the flow path forming substrate 10 is connected to the pressure generation chamber 12, the ink supply path 14 having a smaller cross-sectional area in the short direction of the pressure generation chamber 12, the ink supply path 14, and the ink supply. A liquid flow path including a communication path 15 having a cross-sectional area larger than the cross-sectional area in the short direction of the path 14 is provided by being partitioned by a plurality of partition walls 11.

  The pressure generating chamber 12, the ink supply path 14, and the communication portion 13 are formed by anisotropically etching the flow path forming substrate 10 from the surface opposite to the elastic film 50. Anisotropic etching is performed using the difference in etching rate of the silicon single crystal substrate. In the present embodiment, since the flow path forming substrate 10 is composed of a silicon single crystal substrate having a plane orientation (110), the etching rate of the (111) plane is approximately compared to the etching rate of the (110) plane of the silicon single crystal substrate. This is performed using the property of 1/180. That is, when a silicon single crystal substrate is immersed in an alkaline solution such as KOH, the first (111) plane perpendicular to the (110) plane is gradually eroded and the first (111) plane is 70.53 degrees. And a second (111) plane perpendicular to the (110) plane appears. By this anisotropic etching, precision processing is performed based on a parallelogram formed by two first parallel surfaces (111) and two second parallel surfaces (111). The pressure generating chambers 12 can be arranged with high density. That is, the partition wall 11 defining the flow path of the present embodiment is formed so that the surface thereof becomes the first (111) plane.

  Further, on the opening surface side of the flow path forming substrate 10, a nozzle plate 20 having a nozzle opening 21 communicating with the vicinity of the end of each pressure generating chamber 12 on the side opposite to the ink supply path 14 is provided with an adhesive. Or a heat-welded film or the like. The nozzle plate 20 is made of, for example, glass ceramics, a silicon single crystal substrate, stainless steel, or the like.

  On the other hand, as described above, the elastic film 50 having a thickness of, for example, about 1.0 μm is formed on the surface of the flow path forming substrate 10 opposite to the nozzle plate 20, and the elastic film 50 is formed on the elastic film 50. An insulator film 55 having a thickness of, for example, about 0.4 μm is formed. Further, on the insulator film 55, a lower electrode film 60 having a thickness of, for example, about 0.2 μm, a piezoelectric layer 70 having a thickness of, for example, about 1.0 μm, and a thickness of, for example, about 0 The upper electrode film 80 having a thickness of 0.05 μm is laminated by a process described later to constitute the piezoelectric element 300. Here, the piezoelectric element 300 refers to a portion including the lower electrode film 60, the piezoelectric layer 70, and the upper electrode film 80. In general, one electrode of the piezoelectric element 300 is used as a common electrode, and the other electrode and the piezoelectric layer 70 are patterned for each pressure generating chamber 12. In this case, a portion that is configured by any one of the patterned electrodes and the piezoelectric layer 70 and in which piezoelectric distortion is generated by applying a voltage to both electrodes is referred to as a piezoelectric active portion 320. In this embodiment, the lower electrode film 60 is a common electrode of the piezoelectric element 300, and the upper electrode film 80 is an individual electrode of the piezoelectric element 300. However, there is no problem even if this is reversed for the convenience of the drive circuit and wiring. In any case, the piezoelectric active part 320 is formed for each pressure generating chamber 12. In addition, here, the piezoelectric element 300 and the diaphragm that is displaced by driving the piezoelectric element 300 are collectively referred to as an actuator device. In the above-described example, the elastic film 50, the insulator film 55, and the lower electrode film 60 function as a diaphragm. However, the present invention is not limited to this, and for example, the elastic film 50 and the insulator film 55 are provided. Instead, only the lower electrode film 60 may act as a diaphragm. Further, the piezoelectric element 300 itself may substantially serve as a diaphragm.

  In addition, the upper electrode film 80 of each piezoelectric element 300 has a lead electrode 90 such as gold (Au) extending to the vicinity of the end of the flow path forming substrate 10 opposite to the ink supply path 14. Each is connected. A voltage is selectively applied to each piezoelectric element 300 via the lead electrode 90.

  Further, on the flow path forming substrate 10 on which the piezoelectric element 300 is formed, a protective substrate 30 provided with a reservoir portion 31 in a region facing the communication portion 13 is bonded via an adhesive 35. As described above, the reservoir unit 31 communicates with the communication unit 13 of the flow path forming substrate 10 and constitutes the reservoir 100 serving as a common ink chamber for the pressure generation chambers 12.

  Further, the protective substrate 30 is provided with a piezoelectric element holding portion 32 having a space that does not hinder the movement of the piezoelectric element 300 in a region facing the piezoelectric element 300. In addition, the piezoelectric element holding part 32 should just have a space of the grade which does not inhibit the motion of the piezoelectric element 300, and the said space may be sealed or may not be sealed. Alternatively, the communication portion 13 of the flow path forming substrate 10 may be divided into a plurality of pressure generation chambers 12 and only the reservoir portion 31 may be used as the reservoir. Further, for example, only the pressure generation chamber 12 is provided in the flow path forming substrate 10, and a reservoir and a member interposed between the flow path forming substrate 10 and the protective substrate 30 (for example, the elastic film 50, the insulator film 55, etc.) An ink supply path 14 that communicates with each pressure generating chamber 12 may be provided.

  A drive circuit 120 for driving the piezoelectric element 300 is mounted on the protective substrate 30. For example, a circuit board or a semiconductor integrated circuit (IC) can be used as the drive circuit 120. The drive circuit 120 and the lead electrode 90 are electrically connected via a connection wiring 121 made of a conductive wire such as a bonding wire.

  As the protective substrate 30, it is preferable to use a material substantially the same as the coefficient of thermal expansion of the flow path forming substrate 10, for example, glass, a ceramic material, etc. In this embodiment, the surface orientation of the same material as the flow path forming substrate 10 is used. It was formed using a (110) silicon single crystal substrate.

  A compliance substrate 40 including a sealing film 41 and a fixing plate 42 is bonded onto the protective substrate 30. Here, the sealing film 41 is made of a material having low rigidity and flexibility (for example, a polyphenylene sulfide (PPS) film having a thickness of 6 μm), and the sealing film 41 seals one surface of the reservoir portion 31. It has been stopped. The fixing plate 42 is made of a hard material such as metal (for example, stainless steel (SUS) having a thickness of 30 μm). Since the region of the fixing plate 42 facing the reservoir 100 is an opening 43 that is completely removed in the thickness direction, one surface of the reservoir 100 is sealed only with a flexible sealing film 41. Has been.

  In such an ink jet recording head 1 of the present embodiment, ink is taken in from an external ink supply means (not shown), filled with ink from the reservoir 100 to the nozzle opening 21, and then in accordance with a recording signal from the drive circuit 120. Then, a voltage is applied between each of the lower electrode film 60 and the upper electrode film 80 corresponding to the pressure generation chamber 12 to bend and deform the elastic film 50, the insulator film 55, the lower electrode film 60, and the piezoelectric layer 70. As a result, the pressure in each pressure generating chamber 12 increases and ink droplets are ejected from the nozzle openings 21.

  Hereinafter, a method for manufacturing such an ink jet recording head 1 will be described with reference to FIGS. 3 to 5 are cross-sectional views showing the manufacturing process of the ink jet recording head.

  First, as shown in FIG. 3A, a silicon dioxide film 51 constituting an elastic film 50 is formed on the surface of a flow path forming substrate wafer 110 which is a silicon wafer made of a silicon single crystal substrate having a plane orientation (110). To do.

  Next, as shown in FIG. 3B, an insulator film 55 made of zirconium oxide is formed on the elastic film 50 (silicon dioxide film 51).

  Next, as shown in FIG. 3C, for example, the lower electrode film 60 is formed by laminating platinum (Pt) and iridium (Ir) on the insulator film 55, and then the lower electrode film 60 is formed. Pattern into a predetermined shape. Next, as shown in FIG. 4A, for example, a piezoelectric layer 70 made of lead zirconate titanate (PZT) or the like and an upper electrode film 80 made of iridium, for example, are formed on the wafer 110 for flow path forming substrate. After that, as shown in FIG. 4B, the piezoelectric layer 300 and the upper electrode film 80 are patterned in a region facing each pressure generating chamber 12 to form the piezoelectric element 300.

  The material of the piezoelectric layer 70 constituting the piezoelectric element 300 is, for example, a ferroelectric piezoelectric material such as lead zirconate titanate (PZT), or niobium, nickel, magnesium, bismuth, yttrium, or the like. A relaxor ferroelectric or the like to which a metal is added is used. The composition may be appropriately selected in consideration of the characteristics, usage, etc. of the piezoelectric element 300. The method for forming the piezoelectric layer 70 is not particularly limited. For example, in this embodiment, a so-called sol in which a metal organic material is dissolved and dispersed in a solvent is applied, dried, gelled, and further fired at a high temperature. The piezoelectric layer 70 was formed by using a so-called sol-gel method for obtaining a piezoelectric layer 70 made of an oxide. Of course, the method of forming the piezoelectric layer 70 is not limited to the sol-gel method, and for example, a MOD method or a sputtering method may be used.

  Next, as shown in FIG. 4C, after forming the lead electrode 90 made of gold (Au) over the entire surface of the flow path forming substrate wafer 110, patterning is performed for each piezoelectric element 300.

  Next, as shown in FIG. 5A, the protective substrate wafer 130 is bonded onto the flow path forming substrate wafer 110 with an adhesive 35. Here, the reservoir portion 31 and the piezoelectric element holding portion 32 are formed in advance on the protective substrate wafer 130. Since the protective substrate wafer 130 has a thickness of, for example, about 400 μm, the rigidity of the flow path forming substrate wafer 110 is remarkably improved by bonding the protective substrate wafer 130.

  Next, as shown in FIG. 5B, the flow path forming substrate wafer 110 is thinned to a predetermined thickness.

  Next, as shown in FIG. 5C, a mask 200 made of, for example, silicon nitride (SiN) is newly formed on the flow path forming substrate wafer 110 and patterned into a predetermined shape to form the opening 201. Form. Then, as shown in FIG. 6, regions corresponding to the openings 201 of the flow path forming substrate wafer 110 are obtained by anisotropically etching (wet etching) the flow path forming substrate wafer 110 through the mask 200. The pressure generation chamber 12, the ink supply path 14, the communication path 15, and the communication part 13 are formed.

  Here, a manufacturing process for anisotropically etching the flow path forming substrate wafer 110 will be described in detail with reference to FIGS. 7 to 9 and 11 are enlarged plan views of the main part of the flow path forming substrate wafer showing the manufacturing process by anisotropic etching, and FIGS. 10 and 12 show the manufacturing process by anisotropic etching. It is a principal part expansion perspective view of the wafer for flow path formation substrates which shows these.

  First, as shown in FIG. 7A, a mask 200 is formed over the entire surface of the flow path forming substrate wafer 110 opposite to the piezoelectric element 300, and the mask 200 is patterned through a resist, for example. Thus, an opening 201 having a predetermined shape is formed.

  The opening 201 is formed so as to open a region where the pressure generating chamber 12, the communication part 13, the ink supply path 14, and the communication path 15 of the flow path forming substrate wafer 110 are formed. In the opening 201, the surface of the mask 200 that defines the opening 201 is in a direction along the first (111) surface and the second (111) surface of the flow path forming substrate wafer 110. It is formed as follows. Accordingly, when the flow path forming substrate wafer 110 is anisotropically etched, it is possible to prevent the mask 200 from being etched together with the flow path forming substrate wafer 110 to increase the opening area of the opening 201.

  A plurality of correction patterns 210 extending from the mask 200 for forming the partition wall 11 are provided in the opening 201. The correction pattern 210 is gradually etched together with the flow path forming substrate wafer 110 from the start portion 211 to the end portion serving as the mask 200 for forming the partition wall 11 to widen the opening area of the opening 201. A plurality of such correction patterns 210 are provided at predetermined intervals along the longitudinal direction of the mask 200 for forming the partition wall 11.

  In such a correction pattern 210, all the regions other than the start portion 211 where the anisotropic etching of the flow path forming substrate wafer 110 is started are all the first (111) surface and the second of the flow path forming substrate wafer 110. It is surrounded by a plane along the (111) plane. In other words, the correction pattern 210 is surrounded by a surface along the (111) plane of the crystal orientation of the substrate (channel-forming substrate wafer 110). As a result, the correction pattern 210 is gradually etched from the start portion 211 without starting etching from a region other than the start portion 211.

  In the present embodiment, as the correction pattern 210, a first straight portion 212 extending linearly along the second (111) plane from the mask 200 provided in a region opposite to the partition wall 11, and the first A second straight part 213 bent from the straight part 212 along the first (111) plane and having the start part 211 at the tip is provided. That is, the correction pattern 210 is provided by being bent once in the plane of the flow path forming substrate wafer 110.

  In the present embodiment, the correction pattern 210 is bent once in the plane of the flow path forming substrate wafer 110. However, the shape of the correction pattern 210 is not particularly limited thereto, and is disposed, for example. Depending on the length of the region and the correction pattern 210, it may be formed only by a straight line along the second (111) plane, or may be formed by bending twice or more. In any case, the correction pattern 210 only needs to be formed along the first (111) plane and the second (111) plane except for the start portion 211.

  The length of the correction pattern 210 may be determined as appropriate according to the etching time defined by the etching rate at which the flow path forming substrate wafer 110 is etched. That is, when the etching of the flow path forming substrate wafer 110 is completed, the correction pattern 210 is formed to have a length that can be completely removed at the same time. If the correction pattern 210 disappears earlier than the etching time of the flow path forming substrate wafer 110, etching starting from the defect is not stopped by the correction pattern 210. It is preferable to determine appropriately to such an extent that etching as a starting point can be surely stopped.

  Further, as will be described in detail later, the interval between the correction patterns 210 may be appropriately determined according to the width of the partition wall 11 etched by the defect provided in the mask 200.

  After the mask 200 having such a correction pattern 210 is formed on the flow path forming substrate wafer 110, the flow path forming substrate wafer 110 provided with the mask 200 is immersed in an alkaline solution such as a potassium hydroxide (KOH) aqueous solution. Then, the flow path forming substrate wafer 110 is etched from the opening 201 of the mask 200. At this time, as shown in FIG. 7B, the flow path forming substrate wafer 110 is gradually etched from the start portion 211 that is the tip of the correction pattern 210. Incidentally, in the etching using the correction pattern 210, a +29 degree plane and a −29 degree plane appear with the counterclockwise direction plus with respect to the first (111) plane of the flow path forming substrate wafer 110. Further, with respect to the second (111) plane of the flow path forming substrate wafer 110, a +29 degree plane and a −29 degree plane appear with the counterclockwise direction being plus. That is, from the correction pattern 210, if the first (111) plane of the flow path forming substrate wafer 110 is the horizontal direction (0 degree) and the counterclockwise direction is plus, it is +29 degrees, −29 degrees (+331 degrees). , +99.53 degrees and +41.53 degrees appear by etching. It is known that the etching rate of the appearing surface is different in such etching. That is, the etching rates are −29 degrees (+331 degrees), +99.53 degrees, +41.53 degrees, and +29 degrees in descending order. For this reason, the correction pattern 210 is etched while a surface having a high etching rate appears from the start portion 211.

  Then, as shown in FIG. 8, when the correction pattern 210 is etched until it reaches the mask 200 that forms the partition wall 11, the mask 200 that forms the partition wall 11 is formed along the (111) plane. Etching is stopped with the pattern 210 completely etched.

  As a result, the pressure generation chamber 12, the communication portion 13, the ink supply path 14, and the communication path 15 are formed in the flow path forming substrate wafer 110.

  In the present embodiment, when the flow path forming substrate wafer 110 is etched, the tip of the region facing the partition wall 11 of the mask 200 is also gradually etched. Further, at the same time, the region defining the length of the ink supply path 14 of the mask 200 is gradually etched. In other words, in the present embodiment, the tip of the region facing the partition wall 11 of the mask 200 and the region defining the length of the ink supply path 14 of the mask 200 are the first (111) surface and the second ( 111), the length of the partition wall 11 and the length of the ink supply path 14 are changed by etching.

  By providing the correction pattern 210 in this way, even when the mask 200 has a defect, the partition wall 11 can be formed only by etching the partition wall 11 between the correction patterns 210 adjacent to each other.

  Here, for example, as illustrated in FIG. 9A, when the flow path forming substrate wafer 110 is etched using the mask 200 </ b> A in which the correction pattern 210 is not formed, a defect 220 exists in the mask 200 </ b> A. As shown in FIG. 9B, the partition wall 11 is etched starting from the defect 220. Etching due to the defect 220 of the partition wall 11 proceeds only for the time during which the flow path forming substrate wafer 110 is etched, and is performed until the diaphragm (elastic film 50) is reached as shown in FIG. . When the partition wall 11 is etched by such a defect 220, the rigidity of the partition wall 11 is reduced and crosstalk is generated, and the displacement characteristic of the piezoelectric element 300 is also affected by affecting the displacement characteristic of the diaphragm. Cannot be made uniform.

  On the other hand, as shown in FIG. 11A, when the flow path forming substrate wafer 110 is etched using the mask 200 having the correction pattern 210, even if the defect 220 exists in the mask 200, Although the partition wall 11 is etched starting from the defect 220 as shown in FIG. 11B, this etching is performed only between the adjacent correction patterns 210. That is, even when the partition wall 11 is etched starting from the defect 220, the etching is stopped on the terminal end side of the correction pattern 210. Therefore, as shown in FIG. 12, the etching of the partition wall 11 is stopped between the correction patterns 210 adjacent to each other, and does not reach the diaphragm (elastic film 50), and crosses without decreasing the rigidity of the partition wall 11. The occurrence of talk can be prevented, and the displacement characteristics of the piezoelectric element 300 can be made uniform without changing the vibration characteristics of the diaphragm.

  In this manner, after the flow path forming substrate wafer 110 is anisotropically etched to form the pressure generating chamber 12, the communication portion 13, the ink supply path 14, and the communication path 15, the mask 200 is removed to form the flow path. Unnecessary portions of the outer peripheral edge portions of the substrate wafer 110 and the protective substrate wafer 130 are removed by cutting, for example, by dicing. The nozzle plate 20 having the nozzle openings 21 formed on the surface of the flow path forming substrate wafer 110 opposite to the protective substrate wafer 130 is bonded, and the compliance substrate 40 is bonded to the protective substrate wafer 130. The ink jet recording head 1 having the above-described structure is manufactured by dividing the flow path forming substrate wafer 110 into flow paths forming substrates 10 having a single chip size as shown in FIG.

(Other embodiments)
As mentioned above, although Embodiment 1 of this invention was demonstrated, this invention is not limited to embodiment mentioned above of course. For example, in the first embodiment described above, the correction pattern 210 is provided in a region opposite to the pressure generation chamber 12, the ink supply path 14, and the communication path 15, but the region in which the correction pattern 210 is provided is particularly limited to this. Instead, the first (111) plane or the second (111) plane may be provided so as to extend from a region to be a partition formed on the surface.

  In the first embodiment, the correction pattern 210 is used when anisotropically etching the flow path forming substrate wafer 110. However, the present invention is not limited to this. A similar correction pattern may be used also in anisotropic etching for forming the portion 31.

  Further, in the first embodiment described above, the correction pattern 210 when forming the pressure generating chamber 12 and the like penetrating the flow path forming substrate wafer 110 in the thickness direction is illustrated, but the concave portion that does not penetrate the substrate in the thickness direction. The correction pattern 210 may be used when forming the pattern.

  In the first embodiment described above, a silicon single crystal substrate whose surface crystal plane orientation is the (110) plane is exemplified as the flow path forming substrate 10, but is not particularly limited thereto. As another example, a silicon single crystal substrate having a (100) plane crystal plane orientation may be used. Even in such a case, the correction pattern 210 only needs to be surrounded by the (111) plane except for the start portion 211.

In the first embodiment, silicon nitride is used as the mask 200. However, the present invention is not limited to this. For example, silicon dioxide (SiO 2) formed by thermally oxidizing a substrate made of a silicon single crystal substrate. ₂ ) may be used as a mask.

  In the first embodiment described above, the first linear portion 212 and the second linear portion 213 surrounded as the correction pattern 210 along the (111) plane of the crystal plane orientation of the substrate (channel-forming substrate wafer 110). In practice, the correction pattern 210 is 180 except for the start portion 211 because the corner portion of 180 degrees or less is formed on the outer periphery between the first straight portion 212 and the second straight portion 213. Etching is also started from a corner portion of less than or equal to degrees. However, the etching from the corners of 180 degrees or less of the outer periphery of the correction pattern 210 has a slower etching rate than the other outer periphery and does not cause any particular influence. In order to reliably prevent etching from a region other than the correction pattern start portion 211, a correction pattern 210A having no corners of 180 degrees or less on the outer periphery may be used as shown in FIG. That is, the correction pattern 210 </ b> A includes a first straight portion 212 extending linearly from the mask 200 along the second (111) plane, and a first straight portion 212 extending from the first straight portion 212 along the first (111) surface. What is necessary is just to comprise by the 2nd linear part 213A which is bent by the both sides and has the start part 211A in both the front-end | tips.

  In the first embodiment described above, the actuator device having the thin film type piezoelectric element 300 as the pressure generating means for ejecting the ink droplets from the nozzle opening 21 has been described. However, the present invention is not particularly limited thereto. An actuator device having a thick film type piezoelectric element formed by a method such as affixing a heat generating element, or a heating element is arranged in a pressure generating chamber, and a droplet is discharged from a nozzle opening by a bubble generated by heat generation of the heating element. An actuator device or a so-called electrostatic actuator device that generates static electricity between a diaphragm and an electrode, deforms the diaphragm by electrostatic force, and discharges a droplet from a nozzle opening can be used.

  Furthermore, in the first embodiment described above, the method of manufacturing the ink jet recording head 1 is described as an example of the method of manufacturing the liquid ejecting head. However, the present invention is widely intended for the method of manufacturing the liquid ejecting head. Of course, the present invention can also be applied to a method of manufacturing a liquid ejecting head that ejects liquid other than ink. Other liquid ejecting heads include, for example, various recording heads used in image recording apparatuses such as printers, color material ejecting heads used in the manufacture of color filters such as liquid crystal displays, organic EL displays, and FEDs (field emission displays). Examples thereof include an electrode material ejection head used for electrode formation, a bioorganic matter ejection head used for biochip production, and the like.

  In addition, the present invention is not limited to the method of manufacturing the liquid jet head, and the microfabrication is performed by performing anisotropic etching on a substrate formed of a silicon single crystal substrate having a crystal plane orientation of (110) plane or (100) plane. The present invention can be widely applied to device manufacturing methods.

FIG. 3 is an exploded perspective view of the recording head according to the first embodiment. 2A and 2B are a plan view and a cross-sectional view of the recording head according to the first embodiment. 5 is a cross-sectional view illustrating a manufacturing process of the recording head according to Embodiment 1. FIG. 5 is a cross-sectional view illustrating a manufacturing process of the recording head according to Embodiment 1. FIG. 5 is a cross-sectional view illustrating a manufacturing process of the recording head according to Embodiment 1. FIG. 5 is a cross-sectional view illustrating a manufacturing process of the recording head according to Embodiment 1. FIG. FIG. 3 is an enlarged plan view of a main part illustrating a manufacturing process of the recording head according to the first embodiment. FIG. 3 is an enlarged plan view of a main part illustrating a manufacturing process of the recording head according to the first embodiment. FIG. 3 is an enlarged plan view of a main part illustrating a manufacturing process of the recording head according to the first embodiment. FIG. 4 is an enlarged perspective view of a main part showing a manufacturing process of the recording head according to the first embodiment. FIG. 3 is an enlarged plan view of a main part illustrating a manufacturing process of the recording head according to the first embodiment. FIG. 4 is an enlarged perspective view of a main part showing a manufacturing process of the recording head according to the first embodiment. It is a principal part enlarged plan view which shows the other example of the correction pattern which concerns on other embodiment.

Explanation of symbols

  DESCRIPTION OF SYMBOLS 1 Inkjet recording head (liquid jet head), 10 Flow path formation board | substrate (microdevice), 12 Pressure generation chamber, 13 Communication part, 14 Ink supply path, 15 Communication path, 20 Nozzle plate, 21 Nozzle opening, 30 Protection board , 31 reservoir section, 40 compliance substrate, 50 elastic film, 55 insulator film, 60 lower electrode film, 70 piezoelectric layer, 80 upper electrode film, 90 lead electrode, 100 reservoir, 110 wafer for channel forming substrate, 120 drive Circuit, 121 drive wiring, 130 protective substrate wafer, 200, 200A mask, 201 opening, 210, 210A correction pattern, 211, 211A start part, 212 first straight part, 213, 213A second straight part, 220 defect, 300 Piezoelectric element

Claims (5)

A mask having an opening is provided on the surface of a substrate made of crystalline silicon having a crystal plane orientation of (100) or (110), and the substrate is anisotropically etched through the mask. When forming a recess having a partition whose surface is a (111) surface in a region corresponding to the opening,
The mask extends from the region to be the partition and is gradually etched from one start portion together with the substrate to widen the opening area of the opening, and the region other than the start portion on the outer periphery is a crystal of the substrate. A method of manufacturing a microdevice, comprising providing a plurality of correction patterns surrounded by a plane along a (111) plane of a plane orientation.   2. The method of manufacturing a microdevice according to claim 1, wherein a length from the start portion of the correction pattern to a region to be the partition of the mask is defined based on an etching time of the concave portion.   The method for manufacturing a micro device according to claim 1, wherein the correction pattern is provided by being bent in a plane of the substrate.   The correction pattern includes a linear first straight line portion extending from a region serving as the partition wall, and a second straight line portion bent from the first straight line portion in the plane of the substrate. The method of manufacturing a microdevice according to claim 3, wherein:   5. A microdevice manufacturing method according to claim 1, wherein a flow path forming substrate in which a liquid flow path communicating with a nozzle opening for ejecting liquid is partitioned by a partition is formed. A method for manufacturing a liquid jet head.