JP5024509B2 - Micro device manufacturing method and liquid jet head manufacturing method - Google Patents

Description

  The present invention relates to a microdevice manufacturing method for forming a microdevice by anisotropically etching a silicon substrate, and more particularly, a liquid for manufacturing a substrate constituting a liquid ejecting head that ejects liquid by the microdevice manufacturing method. The present invention relates to a method for manufacturing an ejection head.

  As an ink jet recording head which is a typical example of a microdevice such as a liquid ejecting head, for example, a pressure generating chamber communicating with a nozzle opening and a communicating portion communicating with the pressure generating chamber are formed, and one surface thereof Some include a flow path forming substrate provided with a piezoelectric element on the side, and a sealing substrate on which a reservoir portion that forms a part of the reservoir is formed together with a communication portion of the flow path forming substrate. As the flow path forming substrate and the sealing substrate, for example, a silicon single crystal substrate having a crystal plane orientation of (110) plane is used, and these substrates are interposed through a mask having an opening that opens in a parallelogram. It was formed by anisotropic etching (wet etching) (see, for example, Patent Document 1).

  However, when performing microfabrication by anisotropically etching a narrow area of the substrate, even if an opening is provided in the narrow area of the mask, a recess or the like opening in the narrow area is formed due to the characteristics of anisotropic etching. There is a problem that you can not.

  For this reason, there is a method for manufacturing a microdevice in which a mask is provided with a correction pattern (elongated portion) that is gradually etched together with the substrate to widen the opening area of the opening, and a minute through hole is formed in the substrate by this correction pattern. Yes (see, for example, Patent Document 2).

  However, even with the method using the correction pattern disclosed in Patent Document 2, the correction pattern cannot be fully contained in a narrower region, and thus the desired fine processing cannot be performed by anisotropic etching of the substrate. There is.

  Such a problem exists not only in a method of manufacturing an ink jet recording head that discharges ink, but also in a method of manufacturing a microdevice represented by a method of manufacturing a liquid ejecting head that ejects liquid other than ink. .

International Publication No. 2004/007206 (FIG. 12, pages 24-25, etc.) JP-A-11-227197 (page 6, FIG. 5)

  In view of such circumstances, it is an object of the present invention to provide a microdevice manufacturing method and a liquid jet head manufacturing method capable of performing desired microfabrication by anisotropically etching a substrate.

A first aspect of the present invention that solves the above problem is a method of manufacturing a microdevice having a communicating portion on the surface of a substrate made of single crystal silicon having a (110) crystal plane orientation, A step of providing a mask having a correction pattern and an opening in a portion to be a communication portion; and a step of anisotropically etching the substrate through the mask, wherein the correction pattern includes a plurality of terminal portions and the correction pattern. A corner portion defined by two surfaces intersecting the surface on the substrate side and the surface on the opposite side of the substrate, and one start portion whose angle is 180 degrees or less , and the correction pattern A corner other than the start portion defined by two surfaces intersecting a surface on the substrate side and a surface opposite to the substrate has an angle larger than 180 degrees , and the opening other than the start portion is Crystal plane orientation of the substrate The anisotropic etching step extends the opening area of the opening while etching the substrate from the start portion to a plurality of end portions. It exists in the manufacturing method of a microdevice.
In such a first aspect, by providing a correction pattern that is etched from one start portion to a plurality of end portions, it is possible to provide a correction pattern even in a narrow region where there is no space for providing a linear correction pattern. Fine processing of a narrow region can be performed with high accuracy.

A second aspect of the present invention, as the correction pattern, the front Symbol starting portion and the first pattern portion having a first end portion is coupled to the first pattern portion, that having a other terminal end min The microdevice manufacturing method according to the first aspect is characterized in that at least one branch pattern portion is provided.
In the second aspect, by configuring the correction pattern with the first pattern portion and the branch pattern portion, it is possible to secure the distance of the correction pattern and perform fine processing of the substrate with the correction pattern.

According to a third aspect of the present invention, there is provided the microdevice manufacturing method according to the second aspect, wherein the first pattern portion is provided by being folded.
In the third aspect, by providing the folded portion in the first pattern portion, the distance of the first pattern portion can be ensured and the substrate can be finely processed with the correction pattern.

A fourth aspect of the present invention, the connection portion between the said branch pattern portion and the first pattern portion includes: the anisotropic etching time from the connecting portion to the first end portion, said from the connecting portion The method for manufacturing a microdevice according to the second or third aspect is characterized in that the anisotropic etching time to the other end portion is equal .
In the fourth aspect, etching is performed from the start of the correction pattern to the first end of the first pattern and the other end of the branch pattern.

According to a fifth aspect of the present invention, there is provided a pressure generating chamber that communicates with a nozzle opening that ejects liquid and a pressure that causes the liquid to be ejected into the pressure generating chamber by the method for manufacturing a microdevice according to any one of the first to fourth aspects. And a pressure generating means for applying a pressure to the substrate. The manufacturing method of the liquid ejecting head includes manufacturing a substrate constituting the liquid ejecting head.
In the fifth aspect, it is possible to manufacture a highly accurate liquid jet head by performing microfabrication of the substrate.

Hereinafter, the present invention will be described in detail based on embodiments.
(Embodiment 1)
FIG. 1 is an exploded perspective view of an ink jet recording head which is an example of a liquid ejecting head according to Embodiment 1 of the present invention, and FIG. 2 is a plan view of FIG. As shown in the figure, the flow path forming substrate 10 is formed of a silicon single crystal substrate having a plane orientation (110) in this embodiment, and one surface thereof is previously formed of silicon dioxide by thermal oxidation to a thickness of 0.5 to 2 μm. The elastic film 50 is formed.

  A plurality of pressure generating chambers 12 partitioned by a plurality of partition walls 11 are arranged in parallel in the width direction (short direction) on the flow path forming substrate 10 by anisotropic etching from the other surface side. Further, a communication portion 13 is formed in a region outside the longitudinal direction of the pressure generation chamber 12 of the flow path forming substrate 10, and the communication portion 13 and each pressure generation chamber 12 are provided for each pressure generation chamber 12. Communication is made via a path 14. The communication part 13 communicates with a reservoir part 31 of the protective substrate 30 to be described later and constitutes a part of the reservoir 100 serving as a common liquid chamber for the pressure generating chambers 12. The ink supply path 14 is formed with a narrower width than the pressure generation chamber 12, and maintains a constant flow path resistance of ink flowing into the pressure generation chamber 12 from the communication portion 13. In this embodiment, the ink supply path 14 is formed by narrowing the width of the flow path from one side. However, the ink supply path may be formed by narrowing the width of the flow path from both sides. Further, the ink supply path may be formed by narrowing from the thickness direction instead of narrowing the width of the flow path.

  The pressure generating chamber 12, the ink supply path 14, and the communication portion 13 are formed by anisotropically etching the flow path forming substrate 10 from the surface opposite to the elastic film 50. Anisotropic etching is performed using the difference in etching rate of the silicon single crystal substrate. In the present embodiment, since the flow path forming substrate 10 is composed of a silicon single crystal substrate having a plane orientation (110), the etching rate of the (111) plane is approximately compared to the etching rate of the (110) plane of the silicon single crystal substrate. This is performed using the property of 1/180. That is, when a silicon single crystal substrate is immersed in an alkaline solution such as KOH, the first (111) plane perpendicular to the (110) plane is gradually eroded and the first (111) plane is 70.53 degrees. And a second (111) plane perpendicular to the (110) plane appears. By this anisotropic etching, precision processing is performed based on a parallelogram formed by two first parallel surfaces (111) and two second parallel surfaces (111). The pressure generating chambers 12 can be arranged with high density.

  The communication portion 13 is formed so that the opening shape opened on one surface of the flow path forming substrate 10 has a trapezoidal shape. Similarly to the pressure generation chamber 12 described above, the communication portion 13 includes a first (111) surface whose inner wall is two parallel surfaces and a second (111) surface which is two parallel surfaces. It is defined. Although the method for forming the communication portion 13 will be described in detail later, the corner portion of the trapezoidal opening can be finely processed with high accuracy by providing a correction pattern on a mask used for anisotropic etching. Can do.

  Further, on the opening surface side of the flow path forming substrate 10, a nozzle plate 20 having a nozzle opening 21 communicating with the vicinity of the end of each pressure generating chamber 12 on the side opposite to the ink supply path 14 is provided with an adhesive. Or a heat-welded film or the like. The nozzle plate 20 is made of, for example, glass ceramics, a silicon single crystal substrate, stainless steel, or the like.

  On the other hand, as described above, the elastic film 50 having a thickness of, for example, about 1.0 μm is formed on the surface of the flow path forming substrate 10 opposite to the nozzle plate 20, and the elastic film 50 is formed on the elastic film 50. An insulator film 55 having a thickness of, for example, about 0.4 μm is formed. Further, on the insulator film 55, a lower electrode film 60 having a thickness of, for example, about 0.2 μm, a piezoelectric layer 70 having a thickness of, for example, about 1.0 μm, and a thickness of, for example, about 0 The upper electrode film 80 having a thickness of 0.05 μm is laminated by a process described later to constitute the piezoelectric element 300. Here, the piezoelectric element 300 refers to a portion including the lower electrode film 60, the piezoelectric layer 70, and the upper electrode film 80. In general, one electrode of the piezoelectric element 300 is used as a common electrode, and the other electrode and the piezoelectric layer 70 are patterned for each pressure generating chamber 12. In addition, here, a portion that is configured by any one of the patterned electrodes and the piezoelectric layer 70 and in which piezoelectric distortion is generated by applying a voltage to both electrodes is referred to as a piezoelectric active portion. In this embodiment, the lower electrode film 60 is a common electrode of the piezoelectric element 300, and the upper electrode film 80 is an individual electrode of the piezoelectric element 300. However, there is no problem even if this is reversed for the convenience of the drive circuit and wiring. In any case, a piezoelectric active part is formed for each pressure generating chamber 12. Further, here, the piezoelectric element 300 and the vibration plate that is displaced by driving the piezoelectric element 300 are collectively referred to as a piezoelectric actuator. In the above-described example, the elastic film 50, the insulator film 55, and the lower electrode film 60 function as a diaphragm. However, the elastic film 50 and the insulator film 55 are not provided, and only the lower electrode film 60 is left. The electrode film 60 may be a diaphragm.

  In addition, the upper electrode film 80 of each piezoelectric element 300 has a lead electrode 90 such as gold (Au) extending to the vicinity of the end of the flow path forming substrate 10 opposite to the ink supply path 14. Each is connected. A voltage is selectively applied to each piezoelectric element 300 via the lead electrode 90.

  Further, on the flow path forming substrate 10 on which the piezoelectric element 300 is formed, a protective substrate 30 provided with a reservoir portion 31 in a region facing the communication portion 13 is bonded via an adhesive 35. As described above, the reservoir unit 31 communicates with the communication unit 13 of the flow path forming substrate 10 and constitutes the reservoir 100 serving as a common ink chamber for the pressure generation chambers 12.

  Further, the protective substrate 30 is provided with a piezoelectric element holding portion 32 having a space that does not hinder the movement of the piezoelectric element 300 in a region facing the piezoelectric element 300. In addition, the piezoelectric element holding part 32 should just have a space of the grade which does not inhibit the motion of the piezoelectric element 300, and the said space may be sealed or may not be sealed.

  A drive circuit 120 for driving the piezoelectric element 300 is mounted on the protective substrate 30. For example, a circuit board or a semiconductor integrated circuit (IC) can be used as the drive circuit 120. The drive circuit 120 and the lead electrode 90 are electrically connected via a connection wiring 121 made of a conductive wire such as a bonding wire.

  As the protective substrate 30, it is preferable to use a material substantially the same as the coefficient of thermal expansion of the flow path forming substrate 10, for example, glass, a ceramic material, etc. In this embodiment, the surface orientation of the same material as the flow path forming substrate 10 is used. It was formed using a (110) silicon single crystal substrate.

  A compliance substrate 40 including a sealing film 41 and a fixing plate 42 is bonded onto the protective substrate 30. Here, the sealing film 41 is made of a material having low rigidity and flexibility (for example, a polyphenylene sulfide (PPS) film having a thickness of 6 μm), and the sealing film 41 seals one surface of the reservoir portion 31. It has been stopped. The fixing plate 42 is made of a hard material such as metal (for example, stainless steel (SUS) having a thickness of 30 μm). Since the region of the fixing plate 42 facing the reservoir 100 is an opening 43 that is completely removed in the thickness direction, one surface of the reservoir 100 is sealed only with a flexible sealing film 41. Has been.

  In such an ink jet recording head of this embodiment, ink is taken in from an external ink supply means (not shown), filled with ink from the reservoir 100 to the nozzle opening 21, and then in accordance with a recording signal from the drive circuit 120. Applying a voltage between each of the lower electrode film 60 and the upper electrode film 80 corresponding to the pressure generation chamber 12 to bend and deform the elastic film 50, the insulator film 55, the lower electrode film 60, and the piezoelectric layer 70. As a result, the pressure in each pressure generating chamber 12 increases and ink droplets are ejected from the nozzle openings 21.

  Hereinafter, a method for manufacturing such an ink jet recording head will be described with reference to FIGS. 3 to 5 are cross-sectional views showing the manufacturing process of the ink jet recording head.

  First, as shown in FIG. 3A, a flow path forming substrate wafer 110, which is a silicon wafer made of a silicon single crystal substrate having a plane orientation (110), is thermally oxidized in a diffusion furnace at about 1100 ° C. A silicon dioxide film 51 constituting the elastic film 50 is formed. In the present embodiment, a silicon wafer having a relatively thick and high rigidity of about 625 μm is used as the flow path forming substrate wafer 110.

Next, as shown in FIG. 3B, an insulator film 55 made of zirconium oxide is formed on the elastic film 50 (silicon dioxide film 51). Specifically, after forming a zirconium (Zr) layer on the elastic film 50 (silicon dioxide film 51) by, for example, sputtering, the zirconium layer is thermally oxidized in a diffusion furnace at 500 to 1200 ° C., for example. Thus, the insulator film 55 made of zirconium oxide (ZrO ₂ ) is formed.

  Next, as shown in FIG. 3C, for example, the lower electrode film 60 is formed by laminating platinum (Pt) and iridium (Ir) on the insulator film 55, and then the lower electrode film 60 is formed. Pattern into a predetermined shape. Next, as shown in FIG. 3 (d), a piezoelectric layer 70 made of, for example, lead zirconate titanate (PZT) and an upper electrode film 80 made of, for example, iridium are connected to a wafer 110 for flow path forming substrate. The piezoelectric element 300 is formed by patterning the piezoelectric layer 70 and the upper electrode film 80 in regions facing the pressure generation chambers 12.

  The material of the piezoelectric layer 70 constituting the piezoelectric element 300 is, for example, a ferroelectric piezoelectric material such as lead zirconate titanate (PZT), or niobium, nickel, magnesium, bismuth, yttrium, or the like. A relaxor ferroelectric or the like to which a metal is added is used. The composition may be appropriately selected in consideration of the characteristics, usage, etc. of the piezoelectric element 300. The method for forming the piezoelectric layer 70 is not particularly limited. For example, in this embodiment, a so-called sol in which a metal organic material is dissolved and dispersed in a catalyst is applied, dried, gelled, and further fired at a high temperature. The piezoelectric layer 70 was formed by using a so-called sol-gel method for obtaining a piezoelectric layer 70 made of an oxide. Of course, the method of forming the piezoelectric layer 70 is not limited to the sol-gel method, and for example, the MOD method may be used.

  Next, as shown in FIG. 4A, a lead electrode 90 made of gold (Au) is formed over the entire surface of the flow path forming substrate wafer 110 and then patterned for each piezoelectric element 300.

  Next, as shown in FIG. 4B, the protective substrate wafer 130 is bonded onto the flow path forming substrate wafer 110 with an adhesive 35. Here, the reservoir portion 31 and the piezoelectric element holding portion 32 are formed in advance on the protective substrate wafer 130. Since the protective substrate wafer 130 has a thickness of, for example, about 400 μm, the rigidity of the flow path forming substrate wafer 110 is remarkably improved by bonding the protective substrate wafer 130.

  Next, as shown in FIG. 4C, after the flow path forming substrate wafer 110 is polished to a certain thickness, the flow path forming substrate wafer 110 is further etched to a predetermined thickness by wet etching with hydrofluoric acid. To. For example, in this embodiment, the flow path forming substrate wafer 110 is processed to have a thickness of about 70 μm by polishing and wet etching.

  Next, as shown in FIG. 5A, a mask 200 made of, for example, silicon nitride (SiN) is newly formed on the flow path forming substrate wafer 110 and patterned into a predetermined shape to form the opening 201. Form. Then, as shown in FIG. 5B, the flow path forming substrate wafer 110 is anisotropically etched (wet etching) through the mask 200 to form the openings 201 of the flow path forming substrate wafer 110. The pressure generation chamber 12, the ink supply path 14, and the communication portion 13 are formed in the corresponding region.

  Here, a manufacturing process for anisotropically etching the flow path forming substrate wafer 110 will be described in detail. FIG. 6 is a plan view showing a manufacturing process by anisotropic etching, and FIGS. 7 to 13 are enlarged plan views of main parts showing a manufacturing method by anisotropic etching.

  First, as shown in FIG. 6, a mask 200 is formed over the entire surface of the flow path forming substrate wafer 110 opposite to the piezoelectric element 300, and the mask 200 is patterned through a resist, for example. A shaped opening 201 is formed.

  The opening 201 is formed so that a region where the pressure generation chamber 12, the ink supply path 14, and the communication portion 13 of the flow path forming substrate wafer 110 are formed opens. At this time, since the flow path forming substrate wafer 110 is anisotropically etched to form the communication portion 13 so that the opening has a trapezoidal shape, the opening 201 of the mask 200 also has a trapezoidal region corresponding to the communication portion 13. It forms so that it becomes. The opening 201 is formed in a direction in which the surface of the mask 200 that defines the opening 201 is along the first (111) surface and the second (111) surface of the flow path forming substrate wafer 110. To do. Accordingly, when the flow path forming substrate wafer 110 is anisotropically etched, it is possible to prevent the mask 200 from being etched together with the flow path forming substrate wafer 110 to increase the opening area of the opening 201.

  Further, a correction pattern 210 is provided in a narrow area of the opening 201, in this embodiment, in a corner portion of the area corresponding to the communication portion 13 of the opening 201 as shown in FIG. The correction pattern 210 is gradually etched together with the flow path forming substrate wafer 110 from the start portion 211 to the plurality of end portions 225, 234, 244 to widen the opening area of the opening 201, and It is for etching gradually.

  In such a correction pattern 210, all the regions other than the start portion 211 where the anisotropic etching of the flow path forming substrate wafer 110 is started are all the first (111) surface and the second of the flow path forming substrate wafer 110. It is surrounded by a plane along the (111) plane. Further, the correction pattern 210 is formed so that corners of 180 degrees or less other than the start part 211 are not defined. Thus, the correction pattern 210 is gradually etched from the start portion 211 without starting etching from a region other than the start portion 211.

  In the present embodiment, as the correction pattern 210, a first pattern portion 220 having a start portion 211 at the tip and folded back in a U-shape and having a terminal portion 225, and a branch pattern portion branched from the first pattern portion 220. As shown, a second pattern portion 230 branched from the first pattern portion 220 and having a termination portion 234 and a third pattern portion 240 branched from the first pattern portion 220 and having a termination portion 244 are provided.

  Specifically, the first pattern portion 220 includes a first straight portion 221 that extends linearly along the second (111) plane direction of the flow path forming substrate wafer 110, and a first straight portion. A folded portion 222 extending along the first (111) plane direction, a second linear portion 223 extending linearly from the folded portion along the first (111) plane direction, and a second The first wide portion 224 provided on the end portion side of the straight portion 223 is configured as a start portion 211 and integrated with the mask 200 of the first wide portion 224. This portion is a terminal portion 225 where etching is finished.

  The start part 211 of the first pattern part 220 is formed with a +29 degree end face with respect to the second (111) face of the flow path forming substrate wafer 110, and both side faces of the start part 211 are second ( 111) plane. As a result, a corner portion of 180 degrees or less is defined in the start portion 211.

  The second pattern part 230 includes a first branch part 231 extending from the first linear part 221 of the first pattern part 220 along the second (111) plane direction, and a first branch part 231 to a second one. The third straight line portion mask 232 includes a third straight line portion 232 extending along one (111) plane direction and a second wide width portion 233 provided on the end side of the third straight line portion 232. A portion integrated with 200 is used as an end portion 234 where etching is terminated.

  Further, the third pattern portion 240 includes a second branch portion 241 extending from the second straight portion 223 of the first pattern portion 220 along the second (111) plane direction, and a second branch portion 241 to a second portion. 1, a fourth straight portion 242 extending along the (111) plane direction, and a third wide portion 243 provided on the end side of the fourth straight portion 242. A portion integrated with the mask 200 is used as an end portion 244 where etching is finished.

  That is, in this embodiment, two branch patterns, ie, the second pattern 230 and the third pattern 240, are provided as branch pattern portions branched from the first pattern portion 220, and three end portions 225 are provided from one start portion 211. 234 and 244 are gradually etched to increase the opening area of the opening 201. Note that the number and position of the terminal portions and the number and position of the branch portions are not particularly limited to this. For example, three or more branch portions branched from the first pattern portion 220 are provided, and three or more terminal portions are provided. Alternatively, a branch portion that is further branched from the second pattern portion 230 and the third pattern portion 240 that are branch portions may be provided, and a plurality of termination portions may be provided.

  After the mask 200 having such a correction pattern 210 is formed on the flow path forming substrate wafer 110, the flow path forming substrate wafer 110 provided with the mask 200 is immersed in an alkaline solution such as a potassium hydroxide (KOH) aqueous solution. Then, the flow path forming substrate wafer 110 is etched from the opening 201 of the mask 200. At this time, as shown in FIG. 8, the flow path forming substrate wafer 110 is gradually started to be etched from the start portion 211 that is the tip of the correction pattern 210. In such etching using the correction pattern 210, a +29 degree surface and a -29 degree surface appear with the counterclockwise direction being positive with respect to the first (111) surface of the flow path forming substrate wafer 110. Further, with respect to the second (111) plane of the flow path forming substrate wafer 110, a +29 degree plane and a −29 degree plane appear with the counterclockwise direction being plus. That is, from the correction pattern 210, if the first (111) plane of the flow path forming substrate wafer 110 is the horizontal direction (0 degree) and the counterclockwise direction is plus, it is +29 degrees, −29 degrees (+331 degrees). , +99.53 degrees and +41.53 degrees appear by etching. It is known that the etching rate of the appearing surface is different in such etching. That is, the etching rates are −29 degrees (+331 degrees), +99.53 degrees, +41.53 degrees, and +29 degrees in descending order.

  For this reason, as shown in FIG. 8, the first linear portion 221 of the first pattern portion 220 is etched while the surface of +99.53 degrees appears from the start portion 211.

  When the etching of the first straight part 221 of the first pattern part 220 reaches the branch part 231 of the second pattern part 230, the first straight part 221 of the first pattern part 220 continues to be etched as it is, and The first branch part 231 of the two pattern part 230 is also etched.

  From the first branch portion 231 of the second pattern portion 230, a surface of −29 degrees (+331 degrees) with respect to the first (111) plane and +29 degrees (+ 99. + with respect to the second (111) plane). Etching is performed while the surface of 53 degrees) appears. In this case, since the etching rate is 29 degrees (+99.53 degrees), the surface of +99.53 degrees appears preferentially.

  Then, when the etching of the first branch part 231 of the second pattern part 230 is finished, the etching of the third straight part 232 of the second pattern part 230 is started and the first pattern part 220 is started as shown in FIG. The first straight portion 221 is etched up to the folded portion 222.

  From the third straight line portion 232 of the second pattern portion 230, a +29 degree surface with respect to the first (111) surface and a -29 degree (+41.53 degree) with respect to the second (111) surface. Etching is performed while the surface appears. At this time, the surface of +41.53 degrees has a higher etching rate. Therefore, when etching is continued, the surface of +41.53 degrees appears preferentially as shown in FIG.

  In addition, when the etching of the first linear portion 221 of the first pattern portion 220 is finished, the etching of the folded portion 222 of the first pattern portion 220 is started.

  As shown in FIG. 10, the folded portion 222 of the first pattern portion 220 has a surface of +29 degrees with respect to the first (111) plane and −29 degrees (+41 with respect to the second (111) plane. .53 degrees) and the surface is etched.

  When the etching of the folded portion 222 of the first pattern portion 220 is finished, the etching of the second straight portion 223 of the first pattern portion 220 is started as shown in FIG.

  From the second straight line portion 223 of the first pattern portion 220, a surface of −29 degrees with respect to the first (111) surface and +29 degrees (+99.53 degrees) with respect to the second (111) surface. Etching is performed while the surface appears. In this case, since the surface of +29 degrees (+99.53 degrees) is faster, the −29 degrees surface gradually disappears, and the +99.53 degrees surface appears preferentially.

  Further, when the etching of the second straight part 223 of the first pattern part 220 proceeds, the etching is also started from the second branch part 241 of the third pattern part 240.

  When the etching of the second straight part 223 of the first pattern part 220 reaches the branch part 241 of the third pattern part 240, the second straight part 223 of the first pattern part 220 continues to be etched as it is, The second branch part 241 of the three pattern part 240 is also etched.

  From the 2nd branch part 241 of the 3rd pattern part 240, it is -29 degree | times with respect to the 1st (111) plane, and +29 degree | times (+99.53 degree | times) with respect to the 2nd (111) plane. Etching is performed while the surface appears.

  When the etching of the second branch portion 241 of the third pattern portion 240 is finished, the etching of the fourth straight portion 242 of the third pattern portion 240 is started.

  From the fourth linear portion 242 of the third pattern portion 240, as shown in FIG. 12, the surface is +29 degrees with respect to the first (111) plane and −29 degrees with respect to the second (111) plane. Etching is performed with the (+99.53 degree) surface appearing. In this case, since the surface of +99.53 degrees is faster, the surface of +29 degrees gradually disappears, and the surface of +99.53 degrees appears preferentially. Also at this time, the second straight portion 223 of the first pattern portion 220 and the third straight portion 232 of the second pattern portion 230 are continuously etched.

  Then, when the second straight portion 223 of the first pattern portion 220, the third straight portion 232 of the second pattern portion 230, and the fourth straight portion 242 of the third pattern portion 230 are etched, as shown in FIG. Etching of the first wide portion 224, the second wide portion 233, and the third wide portion 243 is started.

  From the first wide portion 224, the second wide portion 233, and the second wide portion 243, a surface of −29 degrees (331 degrees) with respect to the first (111) surface and a second (111) surface Etching is performed while a surface of +29 degrees (+99.53 degrees) appears. In this case, since the -29 degree surface has a higher etching rate, the -29 degree (331 degree) surface gradually appears. Thus, terminations 225, 234 and 244 are defined on both +999.53 and -29 degrees.

  The first pattern unit 220, the second pattern unit 230, and the third pattern unit 240 are simultaneously etched. That is, when the first pattern portion 220 is etched from the start portion 211 to the end portion 225, the second pattern portion 230 and the third pattern portion 240 are simultaneously etched to the end portions 234 and 244. The distance from the first branch 231 to the terminal end 234 and the distance from the second branch 241 to the terminal end 244 of the second pattern unit 230 and the third pattern unit 240 are defined according to the etching time of the unit 220. Is preferred.

  Thus, by providing the correction pattern 210, a narrow region such as a corner of the communication portion 13 can be finely processed with high accuracy. That is, when a single linear correction pattern is used as in the prior art, a narrow region where a correction pattern cannot be provided cannot be finely processed. By providing the correction pattern 210 that is etched up to the terminal portions 225, 234, and 244, the distance of the correction pattern 210 that is etched with respect to the etching time can be secured, and a narrow region can be finely processed with high accuracy. Can do.

  In this way, by anisotropically etching the flow path forming substrate wafer 110, as shown in FIG. 5B, after forming the pressure generating chamber 12, the ink supply path 14, and the communication portion 13, the mask is formed. 200 is removed, and unnecessary portions of the outer peripheral edge portions of the flow path forming substrate wafer 110 and the protective substrate wafer 130 are removed by cutting, for example, by dicing. The nozzle plate 20 having the nozzle openings 21 formed on the surface of the flow path forming substrate wafer 110 opposite to the protective substrate wafer 130 is bonded, and the compliance substrate 40 is bonded to the protective substrate wafer 130. The ink jet type recording head having the above-described structure is manufactured by dividing the flow path forming substrate wafer 110 and the like into a single chip size flow path forming substrate 10 as shown in FIG.

(Other embodiments)
As mentioned above, although Embodiment 1 of this invention was demonstrated, this invention is not limited to embodiment mentioned above of course. For example, in the first embodiment described above, the correction pattern 210 is provided at the corner of the communication portion 13 of the flow path forming substrate wafer 110. However, the region where the correction pattern 210 is provided is not particularly limited to this. Instead, a correction pattern may be provided in a region where the pressure generation chamber 12 and the ink supply path 14 are formed.

  In the first embodiment, the correction pattern 210 is used when anisotropically etching the flow path forming substrate wafer 110. However, the present invention is not limited to this. The correction pattern may be used also in the anisotropic etching for forming the portion 31.

  Furthermore, in Embodiment 1 described above, the correction pattern when forming the communication portion 13 that penetrates the flow path forming substrate wafer 110 in the thickness direction is exemplified, but the concave portion that does not penetrate the substrate in the thickness direction by the correction pattern. May be formed.

In the first embodiment, silicon nitride is used as the mask 200. However, the present invention is not limited to this. For example, silicon dioxide (SiO 2) formed by thermally oxidizing a substrate made of a silicon single crystal substrate. ₂ ) may be used as a mask.

  In the first embodiment described above, the piezoelectric element is used as the pressure generating means for ejecting ink droplets from the nozzle openings. However, the pressure generating means is not limited to the piezoelectric element, and for example, a heating element is provided in the pressure generating chamber. A nozzle that discharges liquid droplets from the nozzle opening by bubbles generated by the heat generated by the heating element, or generates static electricity between the diaphragm and the electrode, and deforms the diaphragm by electrostatic force to open the nozzle For example, a so-called electrostatic actuator that discharges liquid droplets can be used.

  Furthermore, in the above-described first embodiment, the ink jet recording head manufacturing method has been described as an example of the method of manufacturing the liquid ejecting head. However, the present invention is widely intended for the method of manufacturing the liquid ejecting head. Of course, the present invention can also be applied to a method of manufacturing a liquid ejecting head that ejects liquid other than ink. Other liquid ejecting heads include, for example, various recording heads used in image recording apparatuses such as printers, color material ejecting heads used in the manufacture of color filters such as liquid crystal displays, organic EL displays, and FEDs (field emission displays). Examples thereof include an electrode material ejection head used for electrode formation, a bioorganic matter ejection head used for biochip production, and the like.

  Further, the present invention is not limited to a method for manufacturing a liquid jet head, and is a method for manufacturing a microdevice that performs microfabrication by anisotropically etching a substrate made of a silicon single crystal substrate having a (110) crystal plane orientation. It can be widely applied.

FIG. 3 is an exploded perspective view of the recording head according to the first embodiment. 2A and 2B are a plan view and a cross-sectional view of the recording head according to the first embodiment. 5 is a cross-sectional view illustrating a manufacturing process of the recording head according to Embodiment 1. FIG. 5 is a cross-sectional view illustrating a manufacturing process of the recording head according to Embodiment 1. FIG. 5 is a cross-sectional view illustrating a manufacturing process of the recording head according to Embodiment 1. FIG. 5 is a plan view illustrating a manufacturing process of the recording head according to Embodiment 1. FIG. FIG. 3 is an enlarged plan view of a main part illustrating a manufacturing process of the recording head according to the first embodiment. FIG. 3 is an enlarged plan view of a main part illustrating a manufacturing process of the recording head according to the first embodiment. FIG. 3 is an enlarged plan view of a main part illustrating a manufacturing process of the recording head according to the first embodiment. FIG. 3 is an enlarged plan view of a main part illustrating a manufacturing process of the recording head according to the first embodiment. FIG. 3 is an enlarged plan view of a main part illustrating a manufacturing process of the recording head according to the first embodiment. FIG. 3 is an enlarged plan view of a main part illustrating a manufacturing process of the recording head according to the first embodiment. FIG. 3 is an enlarged plan view of a main part illustrating a manufacturing process of the recording head according to the first embodiment.

Explanation of symbols

DESCRIPTION OF SYMBOLS 10 Flow path formation board | substrate, 12 Pressure generation chamber, 13 Communication part, 14 Ink supply path, 15 Communication path, 16 Protective film, 16a Residue, 20 Nozzle plate, 21 Nozzle opening, 30 Protection board, 31 Reservoir part, 40 Compliance board , 50 elastic film, 55 insulator film, 60 lower electrode film, 70 piezoelectric layer, 80 upper electrode film, 90 lead electrode, 91 adhesion layer, 92 metal layer, 100 reservoir, 110 wafer for flow path forming substrate, 120 drive Circuit, 121 drive wiring, 130 protective substrate wafer, 200 mask, 201 opening, 211 start part, 220 first pattern part, 225 terminal part, 230 second pattern part, 234 terminal part, 240 third pattern part, 244 Termination part, 300 Piezoelectric element

Claims (5)

A method of manufacturing a microdevice having a communication portion on a surface of a substrate made of single crystal silicon having a crystal plane orientation of (110) plane, and having a correction pattern and an opening in a portion to be the communication portion of the substrate surface Providing a mask and anisotropically etching the substrate through the mask, wherein the correction pattern includes a plurality of terminal portions, the substrate-side surface of the correction pattern, and the opposite side of the substrate. A corner portion defined by two surfaces intersecting the surface and having one start portion whose angle is 180 degrees or less , and a surface on the substrate side of the correction pattern and a surface opposite to the substrate A corner other than the starting portion defined by two surfaces intersecting with each other has an angle larger than 180 degrees , and the opening other than the starting portion is along the (111) plane of the crystal plane orientation of the substrate Surrounded by a surface, Method of manufacturing a microdevice step of serial anisotropic etching, characterized in that widen the opening area of the opening while etching the substrate to a plurality of end portions from the beginning.   As the correction pattern, at least one branch pattern portion having a first pattern portion having the start portion and a first end portion, and being connected to the first pattern portion and having another end portion is provided. The method for manufacturing a microdevice according to claim 1.   3. The method of manufacturing a micro device according to claim 2, wherein the first pattern portion is provided by being folded.   The connection portion between the first pattern portion and the branch pattern portion includes the anisotropic etching time from the connection portion to the first termination portion, and the anisotropic from the connection portion to the other termination portion. 4. The method of manufacturing a microdevice according to claim 2, wherein the etching time is equal.   5. A pressure generating chamber that communicates with a nozzle opening that ejects liquid by the method for manufacturing a microdevice according to claim 1, and a pressure generating means that applies pressure to eject the liquid to the pressure generating chamber. A method of manufacturing a liquid jet head, comprising: manufacturing a substrate constituting a liquid jet head comprising:

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