JP4645024B2 - Method for manufacturing actuator device - Google Patents

Method for manufacturing actuator device Download PDF

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JP4645024B2
JP4645024B2 JP2003399846A JP2003399846A JP4645024B2 JP 4645024 B2 JP4645024 B2 JP 4645024B2 JP 2003399846 A JP2003399846 A JP 2003399846A JP 2003399846 A JP2003399846 A JP 2003399846A JP 4645024 B2 JP4645024 B2 JP 4645024B2
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piezoelectric
film
layer
actuator
zirconium
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JP2005166719A (en
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欣山 李
正己 村井
俊昭 横内
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セイコーエプソン株式会社
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    • BPERFORMING OPERATIONS; TRANSPORTING
    • B41PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
    • B41JTYPEWRITERS; SELECTIVE PRINTING MECHANISMS, e.g. INK-JET PRINTERS, THERMAL PRINTERS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
    • B41J2/00Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
    • B41J2/005Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
    • B41J2/01Ink jet
    • B41J2/135Nozzles
    • B41J2/14Structure thereof only for on-demand ink jet heads
    • B41J2/14201Structure of print heads with piezoelectric elements
    • B41J2/14233Structure of print heads with piezoelectric elements of film type, deformed by bending and disposed on a diaphragm
    • B41J2002/14241Structure of print heads with piezoelectric elements of film type, deformed by bending and disposed on a diaphragm having a cover around the piezoelectric thin film element

Description

  The present invention provides a method for manufacturing an actuator device including a diaphragm provided on one surface of a flow path forming substrate in which a pressure generation chamber is formed, and a piezoelectric element provided via the diaphragm, and an actuator formed by the method. The present invention relates to a liquid ejecting head that ejects droplets of ink or the like by displacement of the apparatus.

  An actuator device including a piezoelectric element that is displaced by applying a voltage is mounted on, for example, a liquid ejecting head that ejects liquid droplets. As such a liquid ejecting head, for example, pressure generation that communicates with a nozzle opening is performed. There is known an ink jet recording head in which a part of a chamber is constituted by a diaphragm, and the diaphragm is deformed by a piezoelectric element to pressurize ink in a pressure generating chamber and eject ink droplets from nozzle openings. Two types of inkjet recording heads have been put into practical use: those equipped with a piezoelectric actuator device in a longitudinal vibration mode that extends and contracts in the axial direction of the piezoelectric element, and those equipped with a piezoelectric actuator device in a flexural vibration mode. Yes.

  The former can change the volume of the pressure generation chamber by bringing the end face of the piezoelectric element into contact with the diaphragm, and it is possible to manufacture a head suitable for high-density printing, while the piezoelectric element is arranged in an array of nozzle openings. There is a problem that the manufacturing process is complicated because a difficult process of matching the pitch into a comb-like shape and an operation of positioning and fixing the cut piezoelectric element in the pressure generating chamber are necessary. On the other hand, the latter can flexibly vibrate, although a piezoelectric element can be built on the diaphragm by a relatively simple process of sticking a green sheet of piezoelectric material according to the shape of the pressure generation chamber and firing it. There is a problem that a certain amount of area is required for the use of, and high-density arrangement is difficult. In addition, in order to eliminate the inconvenience of the latter, a uniform piezoelectric material layer is formed by a film forming technique over the entire surface of the diaphragm, and this piezoelectric material layer is cut into a shape corresponding to the pressure generating chamber by a lithography method. Some have piezoelectric elements formed so as to be independent for each pressure generating chamber.

For example, lead zirconate titanate (PZT) is used as the material of the piezoelectric material layer constituting such a piezoelectric element. In this case, when the piezoelectric material layer is fired, the lead component of the piezoelectric material layer is diffused to the silicon oxide (SiO 2 ) film that is provided on the surface of the flow path forming substrate made of silicon (Si) and forms the diaphragm. Resulting in. The diffusion of the lead component causes the melting point of silicon oxide to drop, and there is a problem that it is melted by the heat at the time of firing the piezoelectric material layer. In order to solve such a problem, for example, a zirconium oxide film constituting a vibration plate is provided on a silicon oxide film, and a piezoelectric material layer is provided on the zirconium oxide film, so that the piezoelectric material layer is changed to the silicon oxide film. That prevent the diffusion of lead components. (For example, refer to Patent Document 1).

  However, the zirconium oxide film has a problem that adhesion with the silicon oxide film is low, and peeling of the diaphragm occurs. That is, the zirconium oxide film is formed, for example, by thermally oxidizing the zirconium film after forming the zirconium film by sputtering. The zirconium film thus formed has a polycrystalline structure, but the crystal often has a dumpling shape, and even when a columnar crystal is included, the ratio is low. There is a problem that adhesion is low and peeling of the zirconium oxide film occurs. Such a problem exists not only in a method for manufacturing an actuator device mounted on a liquid ejecting head such as an ink jet recording head but also in a method for manufacturing an actuator device mounted on another device.

Japanese Patent Application Laid-Open No. 11-204849 (FIGS. 1, 2, and 5)

  In view of such circumstances, the present invention provides a method for manufacturing an actuator device that prevents peeling of the diaphragm and improves durability and reliability, and a liquid ejecting head including the actuator device formed by the manufacturing method. The task is to do.

A first aspect of the present invention that solves the above problems includes a diaphragm provided on one side of a flow path forming substrate in which a pressure generating chamber is formed, a lower electrode provided via the diaphragm, a piezoelectric layer, and A method of manufacturing an actuator device comprising a piezoelectric element comprising an upper electrode, wherein zirconium is deposited on one surface side of the flow path forming substrate by sputtering so that the degree of (002) plane orientation of the surface is 80% or more. Forming a layer and thermally oxidizing the zirconium layer to form an insulator film made of zirconium oxide and forming a part of the diaphragm; and a piezoelectric element on the diaphragm. And a piezoelectric element forming step for forming the actuator device.
In the first aspect, a zirconium layer having excellent crystallinity can be formed, and an insulator film having excellent adhesion to the lower film can be formed by thermally oxidizing the zirconium layer thus formed. Can do.

According to a second aspect of the present invention, in the first aspect, the vibration plate forming step is made of silicon oxide (SiO 2 ) on one surface of the flow path forming substrate made of a silicon single crystal substrate. The actuator device manufacturing method further includes a step of forming a part of the elastic film, wherein the insulator film is formed on the elastic film.
In the second aspect, the adhesion is improved even if the lower film of the insulator film is an elastic film made of silicon oxide.

According to a third aspect of the present invention, in the first or second aspect, the piezoelectric element forming step includes at least a step of forming a piezoelectric layer made of lead zirconate titanate (PZT). There is a method of manufacturing the device.
In the third aspect, diffusion of the lead component of the piezoelectric layer into the diaphragm can be prevented, and the diaphragm and the piezoelectric element can be favorably formed.

According to a fourth aspect of the present invention, in any one of the first to third aspects, in the step of forming the insulator film, the zirconium layer is formed by a DC sputtering method. It is in.
In the fourth aspect, a zirconium layer having a (002) plane orientation degree of 80% or more on the surface can be formed relatively easily.

A fifth aspect of the present invention is the method for manufacturing an actuator device according to the fourth aspect, wherein a sputtering output when forming the zirconium layer is 500 W or less.
In the fifth aspect, a zirconium layer having excellent crystallinity can be formed by adjusting the sputtering output.

A sixth aspect of the present invention is the method for manufacturing an actuator device according to the fourth or fifth aspect, wherein the heating temperature for forming the zirconium layer is 100 ° C. or higher.
In the sixth aspect, a zirconium layer having excellent crystallinity can be formed by adjusting the heating temperature during sputtering.

A seventh aspect of the present invention is the method for manufacturing an actuator device according to any one of the fourth to sixth aspects, wherein a sputtering pressure when forming the zirconium layer is 0.5 Pa or less.
In the seventh aspect, a zirconium layer having excellent crystallinity can be formed by adjusting the sputtering pressure.

According to an eighth aspect of the present invention, there is provided a liquid characterized in that a liquid droplet is ejected from a nozzle opening communicating with the pressure generating chamber by displacement of an actuator device formed by any one of the first to seventh manufacturing methods. Located in the jet head.
According to the eighth aspect, it is possible to provide a liquid ejecting head including a highly reliable actuator device.

Hereinafter, the present invention will be described in detail based on embodiments.
(Embodiment 1)
FIG. 1 is an exploded perspective view showing an ink jet recording head including an actuator device according to Embodiment 1 of the present invention, and FIG. 2 is a plan view and a cross-sectional view of FIG. As shown in the figure, the flow path forming substrate 10 is made of a silicon single crystal substrate having a plane orientation (110) in the present embodiment, and one surface thereof is made of silicon dioxide previously formed by thermal oxidation. A 2 μm elastic film 50 is formed. A plurality of pressure generating chambers 12 are arranged in parallel in the width direction of the flow path forming substrate 10. In addition, a communication portion 13 is formed in a region outside the longitudinal direction of the pressure generation chamber 12 of the flow path forming substrate 10, and the communication portion 13 and each pressure generation chamber 12 are provided for each pressure generation chamber 12. Communication is made via a supply path 14. The communication part 13 constitutes a part of a reservoir that communicates with a reservoir part of a protective substrate, which will be described later, and serves as a common ink chamber for the pressure generating chambers 12. The ink supply path 14 is formed with a narrower width than the pressure generation chamber 12, and maintains a constant flow path resistance of ink flowing into the pressure generation chamber 12 from the communication portion 13.

Further, a nozzle plate 20 having a nozzle opening 21 communicating with the vicinity of the end portion of each pressure generating chamber 12 on the side opposite to the ink supply path 14 on the opening surface side of the flow path forming substrate 10 will be described later. It is fixed by an adhesive, a heat welding film or the like through a mask film. The nozzle plate 20 has a thickness of, for example, 0.01 to 1 mm, a linear expansion coefficient of 300 ° C. or less, for example, 2.5 to 4.5 [× 10 −6 / ° C.], glass ceramics, silicon It consists of a single crystal substrate or non-rust steel.

On the other hand, as described above, the elastic film 50 made of silicon dioxide (SiO 2 ) having a thickness of, for example, about 1.0 μm is formed on the side opposite to the opening surface of the flow path forming substrate 10. On the elastic film 50, an insulator film 55 made of zirconium oxide (ZrO 2 ) having a thickness of, for example, about 0.4 μm is formed. As will be described in detail later, the insulator film 55 of the present invention is formed by thermally oxidizing a zirconium layer having a (002) plane orientation degree of 80% or more, and the adhesion with the elastic film 50 is improved. Has been.

Further, on the insulator film 55, a lower electrode film 60 having a thickness of, for example, about 0.2 μm, a piezoelectric layer 70 having a thickness of, for example, about 1.0 μm, and a thickness of, for example, about 0 The upper electrode film 80 having a thickness of 0.05 μm is laminated by a process described later to constitute the piezoelectric element 300. Here, the piezoelectric element 300 refers to a portion including the lower electrode film 60, the piezoelectric layer 70, and the upper electrode film 80. In general, one electrode of the piezoelectric element 300 is used as a common electrode, and the other electrode and the piezoelectric layer 70 are patterned for each pressure generating chamber 12. In addition, here, a portion that is constituted by any one of the patterned electrodes and the piezoelectric layer 70 and in which piezoelectric distortion is generated by applying a voltage to both electrodes is referred to as a piezoelectric active portion. In this embodiment, the lower electrode film 60 is a common electrode of the piezoelectric element 300, and the upper electrode film 80 is an individual electrode of the piezoelectric element 300. However, there is no problem even if this is reversed for the convenience of the drive circuit and wiring. In either case, a piezoelectric active part is formed for each pressure generating chamber. Further, here, the piezoelectric element 300 and the vibration plate that is displaced by driving the piezoelectric element 300 are collectively referred to as a piezoelectric actuator. In the present embodiment, the elastic film, the insulator film, and the polar film below act as a diaphragm, but of course, only the elastic film and the insulator film may act as a diaphragm.
The upper electrode film 80 of each piezoelectric element 300 is connected to a lead electrode 90 made of, for example, gold (Au) or the like, and a voltage is selectively applied to each piezoelectric element 300 via the lead electrode 90. Is applied.

  Further, a protective substrate 30 having a piezoelectric element holding portion 31 capable of securing a space that does not hinder its movement in a region facing the piezoelectric element 300 is bonded to the surface on the piezoelectric element 300 side on the flow path forming substrate 10. Has been. Since the piezoelectric element 300 is formed in the piezoelectric element holding part 31, it is protected in a state hardly affected by the external environment. Further, the protective substrate 30 is provided with a reservoir portion 32 in a region corresponding to the communication portion 13 of the flow path forming substrate 10. In this embodiment, the reservoir portion 32 is provided along the direction in which the pressure generating chambers 12 are arranged so as to penetrate the protective substrate 30 in the thickness direction, and as described above, the communication portion of the flow path forming substrate 10. The reservoir 100 is connected to the pressure generation chamber 12 and serves as a common ink chamber for the pressure generation chambers 12.

In addition, a through hole 33 that penetrates the protective substrate 30 in the thickness direction is provided in a region between the piezoelectric element holding portion 31 and the reservoir portion 32 of the protective substrate 30, and the lower electrode film 60 is provided in the through hole 33. A part of the lead electrode 90 and the leading end of the lead electrode 90 are exposed, and one end of a connection wiring extending from the drive IC is connected to the lower electrode film 60 and the lead electrode 90, although not shown.
In addition, examples of the material of the protective substrate 30 include glass, ceramic material, metal, resin, and the like, but it is more preferable that the material is substantially the same as the coefficient of thermal expansion of the flow path forming substrate 10. In this embodiment, the silicon single crystal substrate made of the same material as the flow path forming substrate 10 is used.

  A compliance substrate 40 including a sealing film 41 and a fixing plate 42 is bonded onto the protective substrate 30. The sealing film 41 is made of a material having low rigidity and flexibility (for example, a polyphenylene sulfide (PPS) film having a thickness of 6 μm), and one surface of the reservoir portion 32 is sealed by the sealing film 41. Yes. The fixing plate 42 is made of a hard material such as metal (for example, stainless steel (SUS) having a thickness of 30 μm). Since the region of the fixing plate 42 facing the reservoir 100 is an opening 43 that is completely removed in the thickness direction, one surface of the reservoir 100 is sealed only with a flexible sealing film 41. Has been.

  In such an ink jet recording head of this embodiment, ink is taken in from an external ink supply unit (not shown), filled with ink from the reservoir 100 to the nozzle opening 21, and then in accordance with a recording signal from a driving IC (not shown). Then, a voltage is applied between each of the lower electrode film 60 and the upper electrode film 80 corresponding to the pressure generation chamber 12 to bend and deform the elastic film 50, the insulator film 55, the lower electrode film 60, and the piezoelectric layer 70. As a result, the pressure in each pressure generating chamber 12 increases and ink droplets are ejected from the nozzle openings 21.

  Here, a method of manufacturing such an ink jet recording head will be described with reference to FIGS. 3 to 5 are cross-sectional views of the pressure generating chamber 12 in the longitudinal direction. First, as shown in FIG. 3A, a channel forming substrate wafer 110 which is a silicon wafer is thermally oxidized in a diffusion furnace at about 1100 ° C., and a silicon dioxide film 51 constituting an elastic film 50 is formed on the surface thereof. To do. In this embodiment, a silicon wafer having a relatively thick film thickness of about 625 μm and a high rigidity is used as the flow path forming substrate wafer 110.

  Next, as shown in FIG. 3B, an insulator film 55 made of zirconium oxide is formed on the elastic film 50 (silicon dioxide film 51). Specifically, first, a zirconium layer is formed on the elastic film 50 by sputtering, for example, DC sputtering in this embodiment. At this time, a zirconium layer is formed under predetermined sputtering conditions so that the (002) plane orientation degree of the surface of the zirconium layer is 80% or more, preferably 90% or more.

  Here, “degree of orientation” refers to a ratio of diffraction intensities generated when a zirconium layer is measured by the X-ray diffraction wide angle method. Specifically, when the zirconium layer is measured by the X-ray diffraction wide angle method, peaks of diffraction intensity corresponding to the (100) plane, the (002) plane, and the (101) plane are generated. For example, the X-ray diffraction measurement result shown in FIG. 6 is for a zirconium layer having a (002) plane orientation degree of about 70%, along with the position corresponding to the (002) plane, the (100) plane, and the (101) plane. It can be seen that an intensity peak occurs at a position corresponding to. The “(002) plane orientation degree” means the ratio of the peak intensity corresponding to the (002) plane to the sum of the peak intensity corresponding to each plane.

  In the case of the zirconium layer according to the present embodiment, as shown in FIG. 7, only the intensity peak substantially corresponding to the (002) plane was generated. That is, the intensity peak corresponding to the (002) plane is extremely large, and the intensity peaks corresponding to the (100) plane and the (101) plane are extremely small and substantially equal to zero. From this result, it was confirmed that the zirconium layer according to the present embodiment has an extremely high degree of (002) plane orientation. In addition, the (002) plane orientation degree of the zirconium layer according to the present embodiment was specifically about 99.7%.

  In order to obtain a zirconium layer having a (002) plane orientation degree of 80% or more in this way, it is preferable that the output when the zirconium layer is formed by DC sputtering is 500 W or less. The heating temperature during sputtering is preferably 100 ° C. or higher. However, if the heating temperature is too high, there is a possibility that the flow path forming substrate 10 may be cracked. Furthermore, the sputtering pressure is preferably 0.5 Pa or less. Thus, by appropriately selecting the film formation conditions and forming the zirconium layer by the DC sputtering method, it is possible to relatively easily form the zirconium layer having a (002) plane orientation degree of 80% or more on the surface.

  After forming the zirconium layer thus formed, for example, in a diffusion furnace heated to 850 to 1000 ° C., for example, at a speed of 300 mm / min or higher, preferably 500 mm / min or higher. Wafer 110 is inserted and the zirconium layer is thermally oxidized. Thereby, the insulator film 55 having a good crystal state can be obtained. That is, the zirconium oxide crystal constituting the insulator film 50 becomes a continuous columnar crystal from the lower surface to the upper surface, and the adhesion between the elastic film 50 and the insulator film 55 is remarkably improved.

Here, cross-sectional SEM images of zirconium oxide (ZrO 2 ) layers (insulator films) formed by thermal oxidation of zirconium layers having (002) plane orientation degrees of 80%, 90%, and 99.7%, respectively. As shown in FIG. 8B and 8C, the right side in the figure is the upper surface side of the zirconium oxide layer. As shown in FIG. 8A, when a zirconium layer having a (002) plane orientation degree of 80% is thermally oxidized, dumpling-like crystals are also seen, but basically a columnar crystal. Further, as shown in FIG. 8 (b), when a zirconium layer having a (002) plane orientation degree of 90% is thermally oxidized, dumpling crystals are slightly seen, for example, on a part of the lower surface side. Most became columnar crystals. Furthermore, as shown in FIG. 8C, when a zirconium layer having a (002) plane orientation degree of 99.7% was thermally oxidized, no dumpling-like crystals were observed, and almost completely columnar crystals were obtained.

As is clear from this result, a zirconium layer having a (002) plane orientation degree of 80% or more is thermally oxidized to form an insulator film 55 (zirconium oxide layer), whereby continuous from the lower surface to the upper surface. An insulator film 55 (zirconium oxide layer) having columnar crystals can be formed. Further, by making the (002) plane orientation degree of the zirconium layer higher, and preferably 90% or more, a good insulator film (zirconium oxide layer) with a high ratio of columnar crystals can be formed. .
As a result, the adhesion between the elastic film 50 and the insulator film 55 is greatly improved, so that the occurrence of peeling of the diaphragm and the like can be prevented, and an actuator device having improved durability and reliability, and the same are provided. In addition, an ink jet recording head can be realized.

  After forming the insulator film 55, as shown in FIG. 3C, for example, after forming the lower electrode film 60 by laminating platinum and iridium on the insulator film 55, The lower electrode film 60 is patterned into a predetermined shape. Next, as shown in FIG. 3D, for example, a piezoelectric layer 70 made of lead zirconate titanate (PZT) and an upper electrode film 80 made of iridium, for example, are formed on the entire surface of the wafer 110 for flow path forming substrate. To form. Here, in this embodiment, a so-called sol-gel in which a so-called sol in which a metal organic material is dissolved and dispersed in a catalyst is applied, dried, gelled, and further fired at a high temperature to obtain a piezoelectric layer 70 made of a metal oxide. The piezoelectric layer 70 made of lead zirconate titanate (PZT) is formed by the method. When the piezoelectric layer 70 is formed in this way, the lead component of the piezoelectric layer 70 may diffuse into the elastic film 50 during firing. However, an insulator film made of zirconium oxide is formed below the piezoelectric layer 70. 55 is provided, the lead component of the piezoelectric layer 70 does not diffuse into the elastic film 50.

  Next, as shown in FIG. 4A, the piezoelectric layer 300 and the upper electrode film 80 are patterned in a region facing each pressure generating chamber 12 to form the piezoelectric element 300. Next, the lead electrode 90 is formed. Specifically, as shown in FIG. 4B, a metal layer 91 made of, for example, gold (Au) or the like is formed over the entire surface of the flow path forming substrate wafer 110. Thereafter, for example, the lead electrode 90 is formed by patterning the metal layer 91 for each piezoelectric element 300 through a mask pattern (not shown) made of a resist or the like.

  Next, as shown in FIG. 4C, a protective substrate wafer 130 that is a silicon wafer and serves as a plurality of protective substrates 30 is bonded to the piezoelectric element 300 side of the flow path forming substrate wafer 110. Since the protective substrate wafer 130 has a thickness of, for example, about 400 μm, the rigidity of the flow path forming substrate wafer 110 is remarkably improved by bonding the protective substrate wafer 130.

  Next, as shown in FIG. 4D, after the flow path forming substrate wafer 110 is polished to a certain thickness, the flow path forming substrate wafer 110 is further subjected to wet etching with fluorinated nitric acid so that the flow path forming substrate wafer 110 is predetermined. Make it thick. For example, in this embodiment, the flow path forming substrate wafer 110 is etched so as to have a thickness of about 70 μm. Next, as shown in FIG. 5A, a mask film 52 made of, for example, silicon nitride (SiN) is newly formed on the flow path forming substrate wafer 110 and patterned into a predetermined shape. Then, the flow path forming substrate wafer 110 is anisotropically etched through the mask film 52, whereby, as shown in FIG. 13 and the ink supply path 14 are formed.

  After that, unnecessary portions of the outer peripheral edge portions of the flow path forming substrate wafer 110 and the protective substrate wafer 130 are removed by cutting, for example, by dicing. The nozzle plate 20 having the nozzle openings 21 formed on the surface of the flow path forming substrate wafer 110 opposite to the protective substrate wafer 130 is bonded, and the compliance substrate 40 is bonded to the protective substrate wafer 130. By dividing the flow path forming substrate wafer 110 and the like into the flow path forming substrate 10 and the like of one chip size as shown in FIG. 1, the ink jet recording head of this embodiment is obtained.

(Other embodiments)
As mentioned above, although each embodiment of this invention was described, this invention is not limited to embodiment mentioned above. For example, in the above-described embodiment, the insulator film 55 is formed on the elastic film 50. However, the insulator film 55 only needs to be provided closer to the piezoelectric layer 70 than the elastic film 50. Another layer may be provided between the elastic film 50 and the insulator film 55. In the above-described embodiments, the present invention has been described by exemplifying an ink jet recording head as an example of the liquid ejecting head. However, the basic configuration of the liquid ejecting head is not limited to the above-described configuration. The present invention covers a wide range of liquid ejecting heads, and can naturally be applied to those ejecting liquids other than ink. Other liquid ejecting heads include, for example, various recording heads used in image recording apparatuses such as printers, color material ejecting heads used in the manufacture of color filters such as liquid crystal displays, organic EL displays, and FEDs (surface emitting displays). Examples thereof include an electrode material ejection head used for electrode formation, a bioorganic matter ejection head used for biochip production, and the like.

  It goes without saying that the manufacturing method of the present invention can be applied not only to an actuator device mounted on a liquid jet head (inkjet recording head) but also to an actuator device mounted on any device.

FIG. 3 is an exploded perspective view of the recording head according to the first embodiment. 2A and 2B are a plan view and a cross-sectional view of the recording head according to the first embodiment. FIG. 3 is a cross-sectional view illustrating a manufacturing process of the recording head according to the first embodiment. FIG. 3 is a cross-sectional view illustrating a manufacturing process of the recording head according to the first embodiment. FIG. 3 is a cross-sectional view illustrating a manufacturing process of the recording head according to the first embodiment. The figure which shows an example of the X-ray-diffraction measurement result of a zirconium layer. The figure which shows the X-ray-diffraction measurement result of the zirconium layer which concerns on this invention. The SEM image which shows the cross section of the zirconium oxide layer concerning this invention.

Explanation of symbols

  DESCRIPTION OF SYMBOLS 10 Flow path formation board | substrate, 12 Pressure generation chamber, 20 Nozzle plate, 21 Nozzle opening, 30 Protection board, 31 Piezoelectric element holding | maintenance part, 32 Reservoir part, 40 Compliance board | substrate, 50 Elastic film, 55 Insulator film, 60 Lower electrode film , 70 piezoelectric film, 80 upper electrode film, 100 reservoir, 300 piezoelectric element

Claims (6)

  1. An actuator device comprising a diaphragm provided on one side of a flow path forming substrate in which a pressure generating chamber is formed, and a piezoelectric element comprising a lower electrode, a piezoelectric layer, and an upper electrode provided via the diaphragm. A manufacturing method comprising:
    Forming an elastic film made of silicon oxide (SiO 2 ) on one side of the flow path forming substrate made of a silicon single crystal substrate ;
    Forming a zirconium layer on the silicon oxide by sputtering so that the degree of (002) plane orientation of the surface is 80% or more, and thermally oxidizing the zirconium layer to form an insulator film made of zirconium oxide; ,
    A method of manufacturing an actuator device comprising at least a piezoelectric element forming step of forming a piezoelectric element on a diaphragm including the elastic film and the insulator film.
  2. 2. The method for manufacturing an actuator device according to claim 1, wherein the piezoelectric element forming step includes at least a step of forming a piezoelectric layer made of lead zirconate titanate (PZT).
  3. 3. The method of manufacturing an actuator device according to claim 1 , wherein in the step of forming the insulator film, the zirconium layer is formed by a DC sputtering method.
  4. The method of manufacturing an actuator device according to claim 3, wherein a sputtering output when forming the zirconium layer is 500 W or less.
  5. 5. The method for manufacturing an actuator device according to claim 3, wherein a heating temperature at the time of forming the zirconium layer is 100 [deg.] C. or higher.
  6. 6. The sputtering pressure for forming the zirconium layer according to any one of claims 3 to 5.
    A method for manufacturing an actuator device, wherein the pressure is 5 Pa or less.
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JP2003399846A JP4645024B2 (en) 2003-11-28 2003-11-28 Method for manufacturing actuator device
US10/995,945 US7411339B2 (en) 2003-11-28 2004-11-24 Manufacturing method of actuator device and liquid jet apparatus provided with actuator device formed by manufacturing method of the same
KR20040098758A KR100666101B1 (en) 2003-11-28 2004-11-29 Manufacturing method of actuator device and liquid jet apparatus provided with actuator device formed by manufacturing method of the same
CNB2004100955678A CN1323841C (en) 2003-11-28 2004-11-29 Method for manufacturing actuator and liquid injection mechanism including said actuator
US11/826,705 US20080034563A1 (en) 2003-08-12 2007-07-18 Manufacturing method of actuator device and liquid jet apparatus provided wirth actuator device formed by manufacturing method of the same

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JP4683226B2 (en) 2006-03-28 2011-05-18 セイコーエプソン株式会社 Method for manufacturing actuator device and method for manufacturing liquid jet head
JP4296441B2 (en) 2006-10-11 2009-07-15 セイコーエプソン株式会社 Method for manufacturing actuator device
JP5083499B2 (en) * 2006-11-13 2012-11-28 セイコーエプソン株式会社 Method for manufacturing actuator device and liquid jet head
JP2008147233A (en) * 2006-12-06 2008-06-26 Seiko Epson Corp Manufacturing method of actuator device and liquid jetting head
JP5289710B2 (en) * 2007-01-18 2013-09-11 富士フイルム株式会社 Piezoelectric element and inkjet head
JP5344120B2 (en) 2007-07-05 2013-11-20 セイコーエプソン株式会社 Actuator device, manufacturing method thereof, and liquid jet head

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