JP2009059958A - Treatment method for silicon substrate, and manufacturing method of liquid injection head - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a treatment method for a silicon substrate in which a recessed portion or groove can be formed on the silicon substrate relatively easily, and a manufacturing method of a liquid injection head. <P>SOLUTION: A protective film 51 is formed on a surface of the silicon substrate, a surface layer of the protective film 5 is processed by irradiation with laser light to form a processed portion 52 in an area where a recessed portion 115 is formed, and the silicon substrate where the protective film 51 having the processed portion 52 is dipped in an etchant to form the recessed portion 115 on the silicon substrate. <P>COPYRIGHT: (C)2009,JPO&INPIT

Description

  The present invention relates to a silicon substrate processing method for processing a silicon substrate by anisotropic etching using an etchant and a liquid jet head manufacturing method for ejecting droplets.

  Conventionally, for example, a liquid ejecting head that discharges liquid droplets from a nozzle by applying pressure to a liquid in a pressure generating chamber by pressure generating means such as a piezoelectric element has been known. As an example, an ink jet recording head that discharges ink droplets may be used. In this ink jet recording head, pressure generating means such as a piezoelectric element is provided on one side of the flow path forming substrate on which the pressure generating chamber is formed, and a nozzle is formed on the other side of the flow path forming substrate. One in which a provided nozzle plate is joined is known.

  Further, a member constituting such an ink jet recording head, for example, a flow path forming substrate (flow path forming plate) is formed of a silicon single crystal substrate. Specifically, a plurality of flow path forming substrates are formed integrally with a silicon wafer and then formed by dividing the silicon wafer (see, for example, Patent Document 1).

  Such silicon wafers are generally printed with identification numbers for identifying individual wafers. This identification number is composed of, for example, a plurality of recesses formed by laser processing of a silicon wafer. The identification number is continuously printed by scratching the silicon wafer with a marking needle or the like, for example.

  For example, the flow path forming substrate is formed with a flow path including a pressure generation chamber penetrating in the thickness direction. Such a flow path is formed as follows. First, a protective film is formed on the surface of a silicon wafer to be a flow path forming substrate, and then this protective film is etched using a resist film or the like, thereby forming an opening in a region facing the flow path. Then, the flow path is formed by anisotropically etching the silicon wafer with an etching solution using the protective film having the opening as a mask.

JP 2004-181947 A

  As described above, when the opening is formed in the protective film, a resist is applied to the entire surface of the silicon wafer (protective film). However, if the identification number is printed on the surface, the resist may not be applied to the portion. is there. That is, since the recesses or grooves constituting the identification number are relatively small, the resist may not enter the recesses or grooves. In such a case, when the opening is formed in the protective film, the protective film of the identification number portion is also etched. Therefore, when the flow path is formed by etching the silicon wafer using the protective film as a mask, the silicon wafer in the identification number portion is also etched. For this reason, there exists a problem that it does not function as an identification number. That is, there is a problem in that the character is crushed and the visibility is lowered by etching the silicon wafer.

  By the way, for example, a nozzle plate is bonded to the flow path forming substrate with an adhesive. For this reason, an escape groove for allowing excess adhesive to flow may be formed on the joint surface of the flow path forming substrate with the nozzle plate. In general, the escape groove is formed by anisotropically etching the flow path forming substrate (silicon wafer) using the protective film as a mask, like the flow path of the pressure generating chamber or the like. By forming in such a procedure, the escape groove can be formed with high accuracy. However, the escape groove is not required to be formed as accurately as the flow path such as the pressure generating chamber. When the escape groove is formed on the flow path forming substrate, it can be formed at the same time as the flow path, so this is not a problem. However, a manufacturing process is required to form the escape groove independently that does not require high processing accuracy. There is a problem of being too complicated.

  Of course, such a problem exists not only in the escape groove but also in the formation of any recess or groove. Further, such a problem exists not only in the manufacturing method of the liquid jet head but also in the case of processing a silicon substrate.

  The present invention has been made in view of such circumstances, and provides a method for processing a silicon substrate and a method for manufacturing a liquid jet head, in which a recess or groove can be formed in a silicon substrate by etching relatively easily. For the purpose.

The present invention for solving the above problems is a method for processing a silicon substrate, wherein a silicon substrate having a (110) surface is anisotropically etched with an etching solution to form a recess in the silicon substrate, Forming a protective film on the surface of the protective film; forming a processed part in a region where the concave part is formed by processing a surface layer of the protective film by irradiating a laser beam; and having the processed part And a step of immersing the silicon substrate on which a protective film is formed in the etching solution to form the recess in the silicon substrate.
In the present invention, when forming the recess by anisotropically etching the silicon substrate using the protective film as a mask, for example, it is not necessary to form a resist film or the like to pattern the protective film, thereby simplifying the manufacturing process. Is done.

  Here, it is preferable that the processed portion is formed in a size inscribed in the opening of the concave portion. The region where the silicon substrate is etched is determined according to the size of the processed portion, and the processed portion is formed in the above size, thereby improving the dimensional accuracy of the recess.

  Further, after the step of forming the protective film, the method further includes the step of forming a resist film on the protective film and forming an opening in the protective film by etching using the resist film as a mask. It is preferable that the step of immersing the substrate in the etching solution is a step of etching the silicon substrate using the protective film in which the opening is formed as a mask. Thereby, a recess is formed simultaneously with the etching of the silicon substrate using the protective film having the opening as a mask. That is, it is not necessary to provide a new process for forming the recess, and the manufacturing process is not complicated.

  The protective film is preferably a silicon oxide film. Thereby, the process part of a protective film can be reliably removed with an etching liquid, and a recessed part can be formed.

  The etching solution is preferably a potassium hydroxide aqueous solution. Thereby, the process part of a protective film can be removed more reliably and a recessed part can be formed still more favorably.

  The laser beam is preferably a YAG laser. Thereby, a process part can be formed in a protective film comparatively easily.

  Specifically, by the processing method of the present invention, an identification number composed of a plurality of the concave portions is printed on the surface of the silicon substrate. Thereby, an identification number can be formed favorably. In the processing method of the present invention, the processing accuracy of the recess is not so high, but an identification number that does not require high processing accuracy can be formed satisfactorily.

  When the silicon substrate constitutes a member bonded to another substrate by an adhesive, specifically, the recess is formed as a clearance groove for the adhesive by the processing method of the present invention. Since the clearance groove is not required to have high processing accuracy, it can be formed relatively easily and satisfactorily by the processing method of the present invention.

Furthermore, the present invention comprises at least a flow path forming substrate having a surface formed of a (110) silicon substrate, in which a pressure generating chamber is formed which is in communication with a nozzle and to which a pressure is applied to eject droplets from the nozzle. A method of manufacturing a liquid ejecting head according to claim 1, wherein the flow path forming substrate is processed by the silicon substrate processing method described above.
In the present invention, for example, the identification number or the concave portion constituting the escape groove of the adhesive can be formed relatively easily and satisfactorily on the flow path forming substrate.

Hereinafter, the present invention will be described in detail based on embodiments.
FIG. 1 is an exploded perspective view of an ink jet recording head manufactured by a manufacturing method according to an embodiment of the present invention, and FIG. 2 is a plan view and a cross-sectional view of FIG.

  As shown in the figure, the flow path forming substrate 10 is a silicon single crystal substrate having a crystal plane orientation of (110) in this embodiment, and an elastic film 50 made of an oxide film is formed on one surface thereof. In the flow path forming substrate 10, a plurality of pressure generating chambers 12 partitioned by a partition wall 11 are arranged in parallel in the width direction.

  Further, an ink supply path 13 and a communication path 14 that are partitioned by a partition wall 11 and communicate with each pressure generation chamber 12 are provided on one end side in the longitudinal direction of the pressure generation chamber 12 of the flow path forming substrate 10. Furthermore, a communication portion 15 that communicates with each communication path 14 is provided outside the communication path 14. The communication portion 15 communicates with a reservoir portion 32 of the protective substrate 30 described later, and constitutes a part of the reservoir 100 that becomes a common ink chamber (liquid chamber) of each pressure generating chamber 12.

  Here, the ink supply path 13 is formed to have a narrower cross-sectional area than the pressure generation chamber 12, and the flow path resistance of the ink flowing into the pressure generation chamber 12 from the communication portion 15 is kept constant. . For example, in this embodiment, the ink supply path 13 has a width smaller than the width of the pressure generation chamber 12 by narrowing the flow path on the pressure generation chamber 12 side between the reservoir 100 and each pressure generation chamber 12 in the width direction. It is formed with. In this embodiment, the ink supply path is formed by narrowing the width of the flow path from one side. However, the ink supply path may be formed by narrowing the width of the flow path from both sides. Further, the ink supply path may be formed by narrowing from the thickness direction instead of narrowing the width of the flow path. Each communication path 14 is formed by extending the partition walls 11 on both sides in the width direction of the pressure generating chamber 12 to the communication part 15 side to partition the space between the ink supply path 13 and the communication part 15.

  A nozzle plate 20 in which a plurality of nozzles 21 are formed is bonded to the opening surface side of the flow path forming substrate 10 by an adhesive layer 25 made of, for example, an adhesive, and each nozzle 21 is connected to each pressure generating chamber. The ink supply paths 13 communicate with each other in the vicinity of the end on the opposite side. The nozzle plate 20 is made of, for example, glass ceramics, a silicon single crystal substrate, stainless steel, or the like. Note that the adhesive layer 25 may be formed of, for example, a heat welding film or the like.

  On the other hand, the elastic film 50 is formed on the surface opposite to the opening surface of the flow path forming substrate 10 as described above. The elastic film 50 is made of an oxide film made of a material different from that of the elastic film 50. An insulator film 55 is formed. Furthermore, a piezoelectric element 300 including a lower electrode film 60, a piezoelectric layer 70, and an upper electrode film 80 is formed on the insulator film 55. Here, the piezoelectric element 300 refers to a portion including the lower electrode film 60, the piezoelectric layer 70, and the upper electrode film 80. In the present embodiment, the lower electrode film 60 is used as a common electrode of the piezoelectric element 300 and the upper electrode film 80 is used as an individual electrode of the piezoelectric element 300. However, there is no problem even if this is reversed for convenience of a drive circuit and wiring. For example, a lead electrode 90 made of, for example, gold (Au) is connected to the upper electrode film 80 of each piezoelectric element 300, and a voltage is selectively applied to each piezoelectric element 300 via the lead electrode 90. It has become so.

  On the flow path forming substrate 10 on which such a piezoelectric element 300 is formed, a protective substrate 30 that is a bonding substrate having a piezoelectric element holding portion 31 for bonding the piezoelectric element 300 is bonded by, for example, an adhesive layer 35. Has been. In addition, the space defined by the piezoelectric element holding part 31 may be sealed or may not be sealed. Further, the protective substrate 30 is provided with a reservoir portion 32 that constitutes at least a part of the reservoir 100 in which the ink supplied to the plurality of pressure generating chambers 12 is stored. In the present embodiment, the reservoir portion 32 is formed across the protective substrate 30 in the thickness direction and across the width direction of the pressure generating chamber 12, and as described above, the communication portion 15 of the flow path forming substrate 10. The reservoir 100 is configured to be communicated with each other. Note that the communication portion 15 of the flow path forming substrate 10 may be divided into a plurality for each pressure generation chamber 12 and only the reservoir portion 32 may be used as the reservoir. Further, for example, only the pressure generation chamber 12 is provided in the flow path forming substrate 10, and a reservoir and a member interposed between the flow path forming substrate 10 and the protective substrate 30 (for example, the elastic film 50, the insulator film 55, etc.) An ink supply path 13 that communicates with each pressure generation chamber 12 may be provided. The protective substrate 30 is provided with an exposed hole 33 penetrating in the thickness direction, and the vicinity of the end portion of the lead electrode 90 drawn from each piezoelectric element 300 is exposed in the exposed hole 33. Yes. As such a protective substrate 30, a silicon single crystal substrate, which is the same material as the flow path forming substrate 10, is used.

  Further, a compliance substrate 40 including a sealing film 41 and a fixing plate 42 is bonded onto the protective substrate 30. Here, the sealing film 41 is made of an organic material having low rigidity and flexibility, and one surface of the reservoir portion 32 is sealed by the sealing film 41. The fixing plate 42 is made of a hard material such as metal. A region of the fixing plate 42 facing the reservoir 100 is an opening 43 that is completely removed in the thickness direction, and one surface of the reservoir 100 is sealed only with a flexible sealing film 41. ing.

  In such an ink jet recording head of this embodiment, ink is taken in from an ink introduction port connected to an external ink supply means (not shown), and the interior from the reservoir 100 to the nozzle 21 is filled with ink. In accordance with a recording signal from (not shown), a voltage is applied between each of the lower electrode film 60 and the upper electrode film 80 corresponding to the pressure generation chamber 12 to bend and deform the piezoelectric element 300, whereby each pressure generation chamber 12. The internal pressure increases and ink droplets are ejected from the nozzle 21.

  Here, for example, the flow path forming substrate 10 constituting such an ink jet recording head is formed of a silicon single crystal substrate having a (110) surface as described above. Specifically, for example, as shown in FIG. 3, after a plurality of integrally formed flow path forming substrate wafers 110 that are silicon wafers of about 6 inches, that is, the flow path forming substrate wafers 110 are etched. A plurality of pressure generation chambers 12, ink supply paths 13, communication paths 14, and communication portions 15 are formed by anisotropic etching with a liquid, and then the flow path forming substrate wafer 110 is divided.

  An identification number for identifying each wafer is printed on such a flow path forming substrate wafer 110. For example, visibility is reduced by forming a flow path such as the pressure generation chamber 12. There is a risk of it. Therefore, in this embodiment, the identification number is printed by etching the flow path forming substrate wafer simultaneously with the formation of the flow path such as the pressure generation chamber 12. This identification number (“A01”) is constituted by a plurality of recesses 115, for example, as shown in the enlarged view of FIG. 4, and each of these recesses 115 anisotropically etches the flow path forming substrate wafer 110. It is formed by doing.

  Hereinafter, the ink jet recording head manufacturing method described above, in particular, the flow path such as the pressure generating chamber 12 is formed by etching the flow path forming substrate wafer 110, and the concave portions 115 constituting the identification number are formed. A method will be described. Note that the flow path such as the pressure generation chamber 12 is actually formed by forming the piezoelectric element 300 on the flow path forming substrate wafer 110 and integrally forming a plurality of protective substrates 30 on the flow path forming substrate wafer 110. The protective substrate wafer 130 is formed after bonding, but since these steps are the same as those in the conventional manufacturing method, description thereof is omitted.

  As a step of forming a flow path such as the pressure generating chamber 12 on the flow path forming substrate wafer 110, first, as shown in FIG. 5A, the flow path forming substrate wafer 110 on the side opposite to the piezoelectric element 300 is provided. A protective film 51 made of silicon dioxide is formed on the surface. Next, as shown in FIGS. 5B and 6, a processed portion 52 is formed by laser processing on the surface layer of the protective film 51 in a region where each concave portion 115 constituting the identification number is formed. That is, by irradiating the surface of the protective film 51 with the laser beam 200, the processed portion 52 that is a deteriorated layer in which the protective film 51 has been altered is formed. The processed portion 52 may be formed in a region where the recess 115 is formed, but is preferably formed in a size inscribed in the opening of the recess 115. For example, in this embodiment, the processed portion 52 having a size inscribed in the opening of the recess 115 is formed in a ring shape. The type of the laser beam 200 is not particularly limited, but for example, a YAG laser is preferably used.

  Next, as shown in FIG. 5C, a resist film 210 is formed by applying a resist to the entire surface of the flow path forming substrate wafer 110, that is, the entire surface of the protective film. Since the processed portion 52 is formed on the surface layer of the protective film 51, the resist is reliably applied also on the processed portion 52. Then, by exposing and developing the resist film 210, an opening 211 having a predetermined shape is formed in a region where a flow path such as the pressure generation chamber 12 of the flow path forming substrate wafer 110 is formed. Next, by etching the protective film 51 using the resist film 210 as a mask, as shown in FIG. 7A, an opening 53 is formed in a region where a flow path such as the pressure generating chamber 12 is formed, The surface of the flow path forming substrate wafer 110 is exposed. Thereafter, the resist film is removed (FIG. 7B).

  Next, as shown in FIG. 7C, the flow path such as the pressure generation chamber 12 is formed by etching the flow path forming substrate wafer 110 using the protective film 51 as a mask. Specifically, the flow path forming substrate wafer 110 is anisotropically etched with a predetermined etching solution such as a potassium hydroxide aqueous solution (KOH aqueous solution), for example, so that the pressure generation chamber 12, the ink supply path 13, A passage 14 and a communication portion 15 are formed. At the same time, each recess 115 constituting the identification number is also formed.

  When the flow path forming substrate wafer 110 is etched with an etching solution such as a KOH aqueous solution, the protective film 51 functions as a mask. That is, the protective film 51 has an extremely low etching rate with the etching solution and is not substantially etched. However, the processed portion 52, which is an altered layer in which the protective film 51 has been altered, is also selectively etched by the etching solution, and as shown in FIG. A substantially circular opening 54 is formed to expose the surface of the flow path forming substrate wafer 110. Thereafter, the flow path forming substrate wafer 110 is etched through the openings 54 to form a plurality of recesses 115. That is, while the flow path forming substrate wafer 110 is etched to form a flow path such as the pressure generation chamber 12, the processed portion 52 of the protective film 51 and a part of the flow path forming substrate wafer are removed to form the recess 115. Is formed (FIG. 7C).

  Specifically, the flow path forming substrate wafer 110 is a silicon single crystal substrate having a (110) surface as described above. Therefore, even when the etching is started through the substantially circular opening 54 as described above, the first (111) plane 116 perpendicular to the (110) plane and the first While the first (111) surface and the second (111) surface 117 intersecting at a predetermined angle are exposed, etching proceeds to form the recess 115. For example, in this embodiment, since the flow path forming substrate wafer 110 is etched through the substantially circular opening 53, each recess 115 has a first (111) surface 116 and a second (111). A surface 117 and a surface 118 that intersects the first and second (111) surfaces 116 and 117 at a predetermined angle.

  Thereafter, the protective film 51 on the flow path forming substrate wafer 110 is removed by, for example, hydrofluoric acid, etc., so that an identification number composed of a plurality of concave portions 115 is printed on the outer periphery of the flow path forming substrate wafer 110. (See FIG. 4).

  As described above, in this embodiment, when the flow path such as the pressure generation chamber 12 is formed on the flow path forming substrate wafer 110, the identification number including the plurality of recesses 115 is printed. Even after the passage such as the chamber 12 is formed, the characters are not crushed. In addition, the character size of the identification number can be made relatively large. Therefore, the visibility of the identification number is improved. Further, in the processing method according to the present embodiment, the manufacturing process is complicated by adding only the process of forming the processing part 52 by laser processing to the protective film 51 when forming the flow path such as the pressure generation chamber 12. Each of the recesses 115 can be satisfactorily formed without the need to do so.

  When forming the concave portion 115 having the opening shape as described above, it is usually formed by etching the flow path forming substrate wafer 110 after forming an opening portion substantially matching the opening shape of the concave portion 115 in the protective film 51. However, in the processing method of the present invention, it is only necessary to form the processing portion 52 in the protective film 51, and the manufacturing efficiency is greatly improved.

  Note that the processing accuracy of each recess 115 formed by such a method may be slightly inferior to the processing accuracy of the pressure generation chamber 12 or the like. However, the recess 115 that constitutes the identification number does not require processing accuracy as high as the pressure generation chamber 12. Accordingly, the recess 115 can be satisfactorily formed by the above-described processing method. Of course, if the processing portion 52 can be formed with extremely high accuracy by laser processing, the flow path such as the pressure generating chamber 12 may be formed by the processing method of the present invention.

  Further, as described above, since the processed portion 52 is formed in a size inscribed in the opening of the recess 115, the opening 54 in the protective film 51 is also formed in a size inscribed in the opening of the recess 115. . Therefore, the recess 115 can be formed with relatively high accuracy by anisotropically etching the flow path forming substrate wafer 110 through the opening 53.

  After forming the flow path such as the pressure generation chamber 12 in the flow path forming substrate wafer 110, the nozzle 21 is formed on the surface of the flow path forming substrate wafer 110 opposite to the protective substrate wafer 130. The bonded nozzle plate 20 is bonded, and the compliance substrate 40 is bonded to the protective substrate wafer 130. Then, along with the flow path forming substrate wafer 110, the protective substrate wafer 130 is divided into a single chip size flow path forming substrate 10 as shown in FIG. Thereby, an ink jet recording head having the above-described structure is manufactured.

  In the present embodiment described above, the example in which the identification number is printed on the flow path forming substrate wafer 110 has been described. Of course, the substrate on which the identification number is printed is a silicon substrate whose surface is the (110) plane. If it is, it will not specifically limit. For example, in this embodiment, the protective substrate 30 is also formed of a silicon substrate having a (110) surface, and like the flow path forming substrate 10, the protective substrate 30 is also a silicon wafer as a protective substrate wafer. A plurality are integrally formed. The piezoelectric element holding portion 31 and the reservoir portion 32 of the protective substrate 30 are also formed by anisotropically etching the protective substrate wafer with an etching solution. And when forming the piezoelectric element holding | maintenance part 31 grade | etc., On the wafer for protective substrates in this way, you may make it print an identification number simultaneously on the wafer for protective substrates.

  Specifically, as shown in FIG. 10A, a protective film 140 is formed on the surface of the protective substrate wafer 130 by, for example, thermal oxidation, and the recess 131 is formed as described above. A processed portion 141 is formed on the protective film 140 by laser processing. Next, as shown in FIG. 10B, a resist film 210A is formed on the protective film 140, and an opening 142 is formed at a predetermined position of the protective film 140 using the resist film 210A as a mask. Thereafter, as shown in FIG. 10C, after removing the resist film 210A, the protective substrate wafer 130 is etched using the protective film 140 as a mask to form the piezoelectric element holding portion 31 and the like. Then, when the piezoelectric element holding portion 31 is formed in this way, as described above, the processed portion 141 of the protective film 140 is removed by etching to form the opening portion 143, and further, the protective substrate wafer is formed from the opening portion 143. A part of 130 is removed to form a recess 131.

  In the present embodiment, the identification number is configured when forming the flow path such as the pressure generating chamber 12 on the flow path forming substrate wafer 110 or when forming the piezoelectric element holding portion 31 or the like on the protective substrate wafer 130. The plurality of recesses 115 and 131 are formed at the same time. Of course, the recesses may be formed independently. For example, as described above, after forming the processed portions 52 and 142 on the protective films 51 and 140 by laser processing, and before patterning the protective films 51 and 140, only the concave portions 115 and 131 constituting the identification number are formed by etching. You may make it do. And after that, you may make it form flow paths, such as the pressure generation chamber 12, separately.

  In the configuration of the present embodiment, for example, the flow path forming substrate 10 and the nozzle plate 20 are bonded by the adhesive layer 25 made of an adhesive, and the flow path forming substrate 10 and the protective substrate 30 are bonded by an adhesive. Joined by layer 35. When these substrates are bonded with an adhesive, the two substrates are bonded in a pressurized state, so there is a risk that excess adhesive will flow into the flow passages such as the pressure generating chamber 12 and the reservoir portion 32. Therefore, for example, as shown in FIG. 11, the bonding surface of the flow path forming substrate 10 with the nozzle plate 20 or the bonding surface of the protective substrate 30 with the flow path forming substrate 10 as shown in FIG. There may be a case where a plurality of relief grooves 250 for allowing excess adhesive to flow in are formed. Such a relief groove 250 does not require processing accuracy as high as that of the flow path of the pressure generation chamber 12 or the like, as in the case of the concave portion 115 described above. Therefore, the processing method of the present invention can also be adopted when such a relief groove 250 is formed in the flow path forming substrate 10 or the protective substrate 30.

  Although one embodiment of the present invention has been described above, the present invention is not limited to the above-described embodiment. For example, in the above-described embodiment, the protective film made of silicon dioxide is formed on the flow path forming substrate wafer or the protective substrate wafer. However, the protective film is not limited to the silicon dioxide film. The processed portion formed in the protective film may be formed of a material that is selectively etched with an etching solution for etching the silicon substrate.

  In the above-described embodiments, the ink jet recording head has been described as an example of the liquid ejecting head. However, the present invention broadly applies to all liquid ejecting heads and ejects liquids other than ink. Of course, the present invention can also be applied to a method of manufacturing a liquid jet head. Other liquid ejecting heads include, for example, various recording heads used in image recording apparatuses such as printers, color material ejecting heads used in the manufacture of color filters such as liquid crystal displays, organic EL displays, and FEDs (field emission displays). Examples thereof include an electrode material ejection head used for electrode formation, a bioorganic matter ejection head used for biochip production, and the like. Further, even when the recess is formed in the silicon substrate by etching other than the manufacturing of the liquid jet head described above, the present invention can of course be employed.

FIG. 3 is an exploded perspective view illustrating an example of a recording head. 2A and 2B are a plan view and a cross-sectional view illustrating an example of a recording head. It is a top view explaining the wafer for channel formation substrates. It is an enlarged view of the wafer for flow path formation substrates explaining an identification number. It is sectional drawing which shows the manufacturing process of the recording head which concerns on one Embodiment. It is a top view which shows the formation process of a recessed part. It is sectional drawing which shows the manufacturing process of the recording head which concerns on one Embodiment. It is a top view which shows the formation process of a recessed part. It is a top view which shows the formation process of a recessed part. It is sectional drawing which shows the manufacturing process of a protective substrate. It is a top view which shows the modification of a flow-path formation board | substrate. It is a top view which shows the modification of a protective substrate.

Explanation of symbols

  DESCRIPTION OF SYMBOLS 10 Flow path formation board | substrate, 11 Partition, 12 Pressure generation chamber, 13 Ink supply path, 14 Communication path, 15 Communication part, 20 Nozzle plate, 21 Nozzle, 25, Adhesion layer, 30 Protection board, 31 Piezoelectric element holding part, 32 Reservoir part, 33 exposed hole, 35 adhesive layer, 40 compliance substrate, 50 elastic film, 51 protective film, 52 processed part, 53, 54 opening, 55 insulator film, 60 lower electrode film, 70 piezoelectric layer, 80 on Electrode film, 90 lead electrode, 100 reservoir, 110 flow path forming substrate wafer, 115 recessed portion, 130 protective substrate wafer, 131 recessed portion, 140 protective film, 141 processed portion, 142 opening portion, 200 laser light, 210 resist film, 211 opening, 250 groove, 300 piezoelectric element

Claims (9)

A silicon substrate processing method for forming a recess in a silicon substrate by anisotropically etching a silicon substrate having a (110) surface with an etchant,
Forming a protective film on the surface of the silicon substrate; forming a processed part in a region where the concave part is formed by irradiating a surface layer of the protective film with laser light; and processing the part And a step of immersing the silicon substrate on which the protective film having the protective film is formed in the etching solution to form the recesses in the silicon substrate.   The method for processing a silicon substrate according to claim 1, wherein the processing portion is formed in a size inscribed in the opening of the concave portion.   After the step of forming the protective film, the method further includes forming a resist film on the protective film and forming an opening in the protective film by etching using the resist film as a mask. The method for processing a silicon substrate according to claim 1, wherein the step of immersing in the etching solution is a step of etching the silicon substrate using the protective film having the opening formed as a mask.   The method for processing a silicon substrate according to claim 1, wherein the protective film is a silicon oxide film.   The method for processing a silicon substrate according to claim 1, wherein the etching solution is an aqueous potassium hydroxide solution.   6. The method for processing a silicon substrate according to claim 1, wherein the laser beam is a YAG laser.   The silicon substrate processing method according to claim 1, wherein an identification number including a plurality of the concave portions is printed on a surface of the silicon substrate.   The said silicon substrate comprises the member adhere | attached on another board | substrate with an adhesive agent, The said recessed part is formed as a relief groove | channel of the said adhesive agent, The any one of Claims 1-6 characterized by the above-mentioned. The processing method of the silicon substrate as described. A liquid ejecting head comprising at least a flow path forming substrate having a surface formed of a (110) silicon substrate and formed with a pressure generating chamber which is in communication with a nozzle and to which a pressure for ejecting a droplet from the nozzle is formed. A manufacturing method,
A method for manufacturing a liquid jet head, wherein the flow path forming substrate is processed by the silicon substrate processing method according to claim 1.

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