JP2008200905A - Method for manufacturing liquid jetting head - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a method for manufacturing a liquid jetting head which can well form a high-density wiring pattern on a joining substrate with a penetration part. <P>SOLUTION: The method for manufacturing includes a metal film formation process for forming a metal film 125 for wiring to be a wiring pattern via an insulating film to one surface of the joining substrate 30, a recessed part forming process for forming recessed parts 131 and 133 to be the penetration part by dry etching the joining substrate from the other surface side until it reaches the insulating film, a joining process for joining the joining substrate to a flow channel forming substrate 10, a removing process for removing by the dry etching the metal film for wiring of a region opposed to the recessed parts, and a patterning process for forming the penetration part by opening the recessed parts through removal of the insulating film of a region opposed to the recessed parts simultaneously when the wiring pattern 121 is formed by patterning by dry etching the metal film for wiring of the other regions. <P>COPYRIGHT: (C)2008,JPO&INPIT

Description

  The present invention relates to a method for manufacturing a liquid ejecting head that ejects liquid from nozzle openings, and more particularly to a method for manufacturing an ink jet recording head that ejects ink as liquid.

  As a typical example of the liquid ejecting head, for example, it has a plurality of pressure generation chambers communicating with nozzle openings for ejecting ink droplets and a reservoir communicating with the plurality of pressure generation chambers, and is supplied from the reservoir to the pressure generation chamber An ink jet recording head that pressurizes the applied ink by a pressure generating means such as a piezoelectric element and ejects the ink from a nozzle opening can be used. Specifically, a flow path formed with a plurality of pressure generation chambers, an ink supply path that communicates with each of the plurality of pressure generation chambers, and a communication portion that communicates with each pressure generation chamber via the ink supply path. A substrate, a piezoelectric element formed on one side of the flow path forming substrate, and a sealing substrate (bonding substrate) having a piezoelectric element holding portion bonded to the flow path forming substrate and protecting the piezoelectric element. In some cases, a reservoir portion that constitutes a reservoir together with the communication portion is provided so as to penetrate the sealing substrate (see, for example, Patent Document 1). Further, as described in Patent Document 1, a wiring pattern such as connection wiring for connecting a piezoelectric element and a drive IC may be provided on the sealing substrate, for example.

  As described in Patent Document 1, as a method of manufacturing such an ink jet recording head, for example, a piezoelectric element is formed on one surface side of a flow path forming substrate, while a piezoelectric element holding portion is formed on a sealing substrate. Forming a reservoir portion and forming a connection wiring on the surface thereof, and then bonding the flow path forming substrate and the sealing substrate, and then wet-etching the flow path forming substrate to which the sealing substrate is bonded. A generation chamber and a communication part are formed.

JP 2004-26225 A

  In such a method of manufacturing an ink jet recording head, after a reservoir portion, which is a penetration portion, is usually formed on the sealing substrate, a metal film is formed on the sealing substrate with the reservoir portion penetrated by, for example, sputtering. (Metal film for wiring) is formed, and this metal film is patterned by a photolithography method or the like to form connection wiring (wiring pattern). For this reason, a metal film is formed even on the inner surface of the reservoir portion, and it is necessary to remove the metal film formed on the inner surface of the reservoir portion in a subsequent process, which makes the manufacturing process complicated. is there. In addition, there is a problem that it is difficult to form a high-density wiring pattern by patterning by photolithography.

  Further, the removal of the metal film on the inner surface of the reservoir portion is performed, for example, in a state where the surface on the metal film side of the sealing substrate (bonding substrate) is protected with a protective film or the like. The surface adhesive may remain. Further, there may be a problem that the metal film cannot be satisfactorily patterned due to the remaining adhesive.

  Such a problem exists not only in the method of manufacturing an ink jet recording head but also in the method of manufacturing a liquid ejecting apparatus that ejects liquid other than ink.

  In view of such circumstances, an object of the present invention is to provide a method of manufacturing a liquid ejecting head that can satisfactorily form a high-density wiring pattern on a bonded substrate having a penetrating portion.

The present invention that solves the above-described problems includes a flow path forming substrate having a pressure generating chamber that communicates with a nozzle opening that ejects liquid, a pressure generating means that causes a pressure change in each pressure generating chamber, and the flow path forming substrate. A bonding substrate bonded to one surface side, the bonding substrate having a through portion that penetrates in the thickness direction and communicates with the pressure generating chamber, and is opposite to the flow path forming substrate of the bonding substrate A method of manufacturing a liquid jet head in which a wiring pattern is provided on a side surface, wherein a metal film forming step of forming a wiring metal film to be the wiring pattern on one surface of the bonding substrate via an insulating film; A recess forming step of forming a recess serving as the through portion by dry etching the other side of the bonding substrate until reaching the insulating film; and a bonding step of bonding the bonding substrate to the flow path forming substrate. A removal step of removing the wiring metal film in the region facing the recess by dry etching, and a region facing the recess at the same time as forming the wiring pattern by patterning the wiring metal film in another region by dry etching And a patterning step of forming the through portion by removing the insulating film and opening the recess.
In the present invention, since the wiring pattern can be formed in a state where the penetrating portion is sealed, a high-density wiring pattern can be favorably formed on the surface of the bonding substrate by dry etching.

  Here, after the through portion forming step, the method further includes a step of forming a protective film made of a liquid-resistant material on the inner surface of the through portion, and in the patterning step, an insulating film in a region facing the concave portion It is preferable to open the recess by removing the protective film. Thereby, a protective film can be formed comparatively easily. Further, since the through portion is reliably sealed by the insulating film and the protective film, a high-density wiring pattern can be formed more reliably.

  Preferably, the bonding substrate is made of a silicon substrate, and the insulating film is made of a silicon dioxide film formed by thermally oxidizing the bonding substrate. Thereby, a penetration part can be sealed more certainly.

  Further, the through portion provided in the bonding substrate is, for example, a reservoir portion constituting at least a part of a reservoir communicating with the plurality of pressure generation chambers. In this case, the reservoir is well formed, and the liquid is smoothly supplied to the pressure generating chamber.

  Further, the wiring metal film is preferably formed by a sputtering method. Thereby, the metal film for wiring can be satisfactorily formed with a predetermined film thickness.

Hereinafter, the present invention will be described in detail based on embodiments.
(Embodiment 1)
FIG. 1 is an exploded perspective view showing a schematic configuration of an ink jet recording head which is an example of a liquid ejecting head according to Embodiment 1 of the present invention. FIG. 2 is a plan view of FIG. FIG.

  In the present embodiment, the flow path forming substrate 10 is made of a silicon single crystal substrate having a (110) crystal plane orientation, and as shown in the drawing, the pressure generating chamber 12 partitioned by a plurality of partition walls 11 has a width direction (short). (In the direction of the hand). In addition, an ink supply path 13 and a communication path 14 are partitioned by a partition wall 11 at one end in the longitudinal direction of the pressure generating chamber 12 of the flow path forming substrate 10. In addition, a communication portion 15 that forms a part of the reservoir 100 common to the pressure generation chambers 12 is formed at one end of the communication passage 14.

  The ink supply path 13 communicates with one end side in the longitudinal direction of the pressure generation chamber 12 and has a smaller cross-sectional area than the pressure generation chamber 12. For example, in the present embodiment, the ink supply path 13 is smaller than the width of the pressure generation chamber 12 by narrowing the flow path on the pressure generation chamber 12 side between the communication portion 15 and each pressure generation chamber 12 in the width direction. The flow path resistance of the ink flowing into the pressure generation chamber 12 from the communication portion 15 is kept constant. As described above, in this embodiment, the ink supply path 13 is formed by narrowing the width of the flow path from one side. However, the ink supply path may be formed by narrowing the width of the flow path from both sides. Further, the ink supply path may be formed by narrowing from the thickness direction instead of narrowing the width of the flow path. Further, each communication path 14 communicates with the side of the ink supply path 13 opposite to the pressure generation chamber 12 and has a larger cross-sectional area than the ink supply path 13. In the present embodiment, the communication path 14 is formed to have the same cross-sectional area as the pressure generation chamber 12.

  On the opening surface side of the flow path forming substrate 10, a nozzle plate 20 having a nozzle opening 21 communicating with the vicinity of the end of each pressure generating chamber 12 on the side opposite to the ink supply path 13 is provided with adhesive or heat. It is fixed by a welding film or the like. The nozzle plate 20 is made of, for example, glass ceramics, a silicon single crystal substrate, stainless steel, or the like.

On the other hand, an elastic film 50 made of silicon dioxide and having a thickness of about 0.5 to 2 μm is formed on the side opposite to the opening surface of the flow path forming substrate 10. On the elastic film 50, an insulator film 55 made of zirconium oxide (ZrO ₂ ) and having a thickness of, for example, about 0.4 μm is laminated. On the insulator film 55, the lower electrode film 60 having a thickness of about 0.1 to 0.5 μm and lead zirconate titanate (PZT) which is an example of a piezoelectric film are formed. For example, the piezoelectric element 300 including the piezoelectric layer 70 having a thickness of about 1.1 μm and the upper electrode film 80 having a thickness of, for example, about 0.05 μm is formed. Here, the piezoelectric element 300 refers to a portion including the lower electrode film 60, the piezoelectric layer 70, and the upper electrode film 80. In general, the piezoelectric element 300 is formed by patterning one electrode as a common electrode and patterning the other electrode and the piezoelectric layer 70 for each pressure generation chamber 12. In this embodiment, the lower electrode film 60 is a common electrode of the piezoelectric element 300, and the upper electrode film 80 is an individual electrode of the piezoelectric element 300. However, there is no problem even if this is reversed for the convenience of the drive circuit and wiring.

  For example, lead electrodes 90 made of a metal material such as gold (Au) are connected to the upper electrode film 80 of each piezoelectric element 300, and the piezoelectric elements 300 are selectively connected to the upper electrode film 80 via the lead electrodes 90. A voltage is applied.

  Furthermore, a reservoir forming substrate 30 that is a bonding substrate is bonded to the flow path forming substrate 10 with an adhesive 35 on the surface of the flow path forming substrate 10 on the piezoelectric element 300 side. The reservoir forming substrate 30 is provided with a reservoir portion 31 that is a penetrating portion constituting at least a part of the reservoir 100. The reservoir portion 31 communicates with the communication portion 15 of the flow path forming substrate 10 to configure the reservoir 100. Further, as shown in FIG. 2, a protective film 34 made of a material having ink resistance (liquid resistance), such as silicon dioxide, is formed on the inner surface of the reservoir portion 31. In this embodiment, the protective film 34 is continuously provided to the inner surfaces of the reservoir 31 and the inner surfaces of the piezoelectric element holding portion 32 and the through hole 33 described later. The protective film 34 is provided to prevent the inner surface of the reservoir portion 31 from being eroded by ink, and of course, it may not be provided on the inner surfaces of the piezoelectric element holding portion 32 and the through hole 33. .

  In the present embodiment, the reservoir 100 includes the communication portion 15 and the reservoir portion 31. For example, the communication portion 15 is provided independently for each pressure generation chamber 12, and only the reservoir portion 31 functions as a reservoir. You may make it do. Further, for example, only the pressure generating chamber 12 is provided in the flow path forming substrate 10, and a reservoir (reservoir) is provided in a member (for example, an elastic film, an insulator film, etc.) interposed between the flow path forming substrate 10 and the reservoir forming substrate 30. Part) and each pressure generating chamber 12 may be provided with an ink supply path.

  A piezoelectric element holding portion 32 for protecting the piezoelectric element 300 is provided in a region facing the piezoelectric element 300 of the reservoir forming substrate 30. Since the piezoelectric element 300 is formed in the piezoelectric element holding portion 32, the piezoelectric element 300 is protected in a state hardly affected by the external environment. In addition, the piezoelectric element holding | maintenance part 32 may be sealed and does not need to be sealed. Examples of the material of the reservoir forming substrate 30 include glass, ceramic material, metal, resin, and the like, but it is preferable that the reservoir forming substrate 30 be formed of a material substantially the same as the coefficient of thermal expansion of the flow path forming substrate 10. In this embodiment, the silicon single crystal substrate made of the same material as the flow path forming substrate 10 is used.

  The reservoir forming substrate 30 is provided with a through hole 33 penetrating the reservoir forming substrate 30 in the thickness direction, and the vicinity of the end portion of the lead electrode 90 drawn from each piezoelectric element 300 is the through hole 33. It is exposed inside. As shown in FIG. 2, a connection wiring (wiring pattern) 121 formed in a predetermined pattern is provided on the reservoir forming substrate 30 via an insulating film 120, and the piezoelectric element 300 is driven on the connection wiring 121. A driving circuit 122 is mounted for this purpose. For example, the drive circuit 122 such as a semiconductor integrated circuit (IC) and the lead electrode 90 are electrically connected by a drive wiring 123 made of a conductive wire such as a bonding wire extending in the through hole 33. ing.

  Furthermore, a compliance substrate 40 including a sealing film 41 and a fixing plate 42 is bonded onto a region corresponding to the reservoir portion 31 of the reservoir forming substrate 30. The sealing film 41 is made of a material having low rigidity and flexibility (for example, a polyphenylene sulfide (PPS) film having a thickness of 6 μm). The sealing film 41 seals one surface of the reservoir unit 31. Yes. The fixing plate 42 is made of a hard material such as metal (for example, stainless steel (SUS) having a thickness of 30 μm). Since the region of the fixing plate 42 facing the reservoir 100 is an opening 43 that is completely removed in the thickness direction, one surface of the reservoir 100 is sealed only with a flexible sealing film 41. Has been.

  In such an ink jet recording head of this embodiment, ink is taken in from an external ink supply unit (not shown), filled with ink from the reservoir 100 to the nozzle opening 21, and then in accordance with a recording signal from the drive circuit 122. By applying a voltage between each of the lower electrode film 60 and the upper electrode film 80 corresponding to the pressure generation chambers 12 to bend and deform the piezoelectric element 300 and the diaphragm, the pressure in each pressure generation chamber 12 increases. Ink is ejected from the nozzle openings 21.

  Hereinafter, a method for manufacturing such an ink jet recording head will be described with reference to FIGS. 3 to 6 and 9 are views showing the manufacturing process of the ink jet recording head of the present invention, and are cross-sectional views in the longitudinal direction of the pressure generating chamber. 7 is a cross-sectional view showing the structure of the connection wiring according to the prior art, and FIG. 8 is a cross-sectional view showing the structure of the connection wiring according to the present invention.

First, the piezoelectric element 300 is formed on a flow path forming substrate wafer 110 on which a plurality of flow path forming substrates 10 are integrally formed via a vibration plate. Specifically, first, as shown in FIG. 3A, a flow path forming substrate wafer 110 which is a silicon wafer is thermally oxidized to form a silicon dioxide film 51 constituting an elastic film 50 on the surface thereof. Next, as shown in FIG. 3B, an insulator film 55 made of zirconium oxide (ZrO ₂ ) is formed on the elastic film 50 (silicon dioxide film 51).

  Next, as shown in FIG. 3C, for example, after the lower electrode film 60 is formed by laminating platinum and iridium on the flow path forming substrate wafer 110, the lower electrode film 60 is formed into a predetermined shape. To pattern. Next, as shown in FIG. 3D, a piezoelectric layer 70 made of, for example, lead zirconate titanate (PZT), and an upper electrode film 80 made of, for example, iridium are formed on the flow path forming substrate wafer 110. The piezoelectric element 300 is formed by patterning the piezoelectric layer 70 and the upper electrode film 80 on the entire surface and in a region facing each pressure generating chamber 12.

  The material of the piezoelectric layer 70 constituting the piezoelectric element 300 is, for example, a ferroelectric piezoelectric material such as lead zirconate titanate (PZT), or niobium, nickel, magnesium, bismuth, yttrium, or the like. A relaxor ferroelectric or the like to which a metal is added is used. The method for forming the piezoelectric layer 70 is not particularly limited. For example, in this embodiment, a so-called sol in which a metal organic material is dissolved and dispersed in a solvent is applied, dried, gelled, and further fired at a high temperature. The piezoelectric layer 70 was formed by using a so-called sol-gel method for obtaining a piezoelectric layer 70 made of an oxide. The method for manufacturing the piezoelectric layer 70 is not limited to the sol-gel method, and for example, a MOD (Metal-Organic Decomposition) method or a sputtering method may be used.

  Next, the lead electrode 90 is formed. Specifically, as shown in FIG. 3E, a metal layer 91 is formed over the entire surface of the flow path forming substrate wafer 110, and this metal layer 91 is patterned for each piezoelectric element 300 to lead. An electrode 90 is formed.

  On the other hand, a reservoir part 31, a piezoelectric element holding part 32, and a through-hole 33 are formed in a reservoir forming substrate wafer 130 in which a plurality of reservoir forming boards 30 are integrally formed, and wirings serving as connection wirings on the surface thereof A metal film 125 is formed. Specifically, first, as shown in FIG. 4A, the insulating film 120 made of silicon dioxide is formed on the surface of the reservoir forming substrate wafer 130 which is a silicon single crystal substrate by thermal oxidation. Next, a wiring metal film 125 to be the connection wiring 121 is formed on one surface side of the reservoir forming substrate wafer 130 via the insulating film 120. That is, as shown in FIG. 4B, the wiring metal film 125 is formed by sequentially forming the adhesion film 126 and the metal film 127 over the entire surface of the reservoir forming substrate wafer 130 by, for example, sputtering. To do. The main material of the metal film 127 is not particularly limited as long as it is a material having relatively high conductivity, and examples thereof include gold (Au), platinum (Pt), aluminum (Al), and copper (Cu). In this embodiment, gold (Au) is used. The material of the adhesion film 126 may be any material that can ensure the adhesion of the metal film 127. Specifically, titanium (Ti), titanium tungsten compound (TiW), nickel (Ni), chromium (Cr ) Or a nickel chromium compound (NiCr) or the like. In this embodiment, a nickel chromium compound (NiCr) is used.

  Next, as shown in FIG. 4C, the insulating film 120 formed on the other surface side of the reservoir forming substrate wafer 130 is patterned into a predetermined shape. Then, by using the patterned insulating film 120 as a mask, the reservoir forming substrate wafer 130 is dry-etched until it reaches the insulating film 120 on the wiring metal film 125 side, as shown in FIG. The recesses 131 and 133 to be the reservoir 31 and the through holes 33 are formed in the wafer 130. At the same time, the piezoelectric element holding portion 32 is simultaneously formed by half-etching the reservoir forming substrate wafer 130, for example.

  Next, a protective film 34 made of a material having ink resistance (liquid resistance), for example, silicon dioxide, is formed at least on the inner surface of the recess 131 to be the reservoir portion 31. In this embodiment, as shown in FIG. 4E, the protective film 34 is formed on the entire other surface of the reservoir forming substrate wafer 130. The method of forming the protective film 34 is not particularly limited, but can be formed relatively easily by, for example, TEOS-CVD. In the present embodiment, the protective film 34 is formed over the entire surface of one side of the reservoir forming substrate wafer 130, but the protective film 34 may be provided only on the inner surface of the recess 131 serving as the reservoir portion 31. That's fine.

  Then, with the recesses 131 and 133 closed with the protective film 34, the insulating film 120, and the wiring metal film 125, the reservoir forming substrate wafer 130 is bonded with the adhesive 35 as shown in FIG. Bonded to the flow path forming substrate wafer 110.

  After the reservoir forming substrate wafer 130 is bonded to the flow path forming substrate wafer 110 in this manner, the wiring metal film 125 is patterned to form a connection wiring 121 having a predetermined pattern. At the same time, the insulating film 120 and the protective film 34 are patterned to open the recesses 131 and 133, thereby forming the reservoir portion 31 and the through hole 33. First, as shown in FIG. 5B, a resist is applied on the wiring metal film 125, exposed and developed to form a resist film 200 having an opening 201 in a region facing the recesses 131 and 133. To do. Next, as shown in FIG. 5C, the metal film 127 and the adhesion film 126 constituting the wiring metal film 125 are sequentially dry-etched (ion milling) through the resist film 200 to thereby form the recesses 131 and 133. The metal film 127 and the adhesion film 126 in the region facing the surface are removed.

  Next, after removing the resist film 200 once, as shown in FIG. 6A, a resist is applied, exposed and developed again, thereby forming a resist film 200A having the same pattern as the shape of the connection wiring 121. Then, as shown in FIG. 6B, the connection wiring 121 is formed by sequentially dry etching (ion milling) the metal film 127 and the adhesion film 126 through the resist film 200A. Further, when the connection wiring 121 is formed in this way, the insulating film 120 and the protective film 34 in the region facing the recesses 131 and 133 are simultaneously removed. Thereby, the recessed portions 131 and 133 are opened, and the reservoir portion 31 and the through hole 33 are formed. The insulating film 120 and the protective film 34 are of course different in etching rate from the wiring metal film 125 (connection wiring 121), but can be removed substantially simultaneously by adjusting the etching time.

  By forming the connection wiring 121 by dry etching in this way, the dimensional accuracy is significantly improved as compared with the conventional connection wiring formed by wet etching. Therefore, the connection wiring (wiring pattern) 125 can be formed with an extremely high density, and the connection wiring 121 can be satisfactorily formed even when the density of the piezoelectric element is increased.

  In addition, when the metal film 127 and the adhesion film 126 are dry-etched (ion milling), the etching rate tends to decrease as the temperature increases. Therefore, it is necessary to sufficiently cool the reservoir forming substrate wafer 130 from the flow path forming substrate wafer 110 side with a cooling gas or the like. In the present embodiment, after bonding the reservoir forming substrate wafer 130 to the flow path forming substrate wafer, that is, in a state where the recesses 131 and 133 of the reservoir forming substrate wafer are closed by the flow path forming substrate wafer 110, The metal film 127 and the adhesion film 126 are patterned, and at the same time, the recess portions 131 and 133 are opened to form the reservoir portion 31 and the through hole 33. Accordingly, the metal film 127 and the adhesion film 126 can be dry etched while the reservoir forming substrate wafer 130 is reliably cooled, and at the same time, the reservoir portion 31 and the through hole 33 can be formed. That is, the metal film 127 and the adhesion film 126 can be satisfactorily patterned at a desired constant etching rate, and the connection wiring 121 can be formed with high accuracy.

  The metal film 127 and the adhesion film 126 are patterned before the reservoir forming substrate wafer 130 is bonded to the flow path forming substrate wafer 110, that is, in the state of the reservoir forming substrate wafer 130 alone, and at the same time, the recesses 131 and 133 are formed. If the reservoir portion 31 and the through hole 33 are formed by opening the hole, the cooling gas may flow out of the reservoir portion 31 and the through hole 33 during etching. If the cooling gas flows out, the reservoir forming substrate wafer 130 cannot be sufficiently cooled, the etching rate is lowered, and the connection wiring 121 may not be formed satisfactorily.

  Further, in the conventional connection wiring 1210 formed by wet etching, for example, as shown in FIG. 7, the width of the adhesion film 1260 is narrower than that of the metal film 1270. For this reason, in the conventional connection wiring 1210, for example, when the primer process is performed, the primer remains between the metal film 1270 and the insulating film 1200, and this primer may become a foreign substance later. In contrast, the connection wiring 121 of the present application formed by dry etching has a substantially trapezoidal cross section as shown in FIG. Therefore, even when the primer treatment is performed, the primer does not remain between the metal film 127 and the insulating film 120. Therefore, the generation of foreign matter can be prevented.

  Further, before the recess 131 formed in the reservoir forming substrate wafer 130 is opened to form the reservoir 31, the wiring metal film 125 to be the connection wiring 121 is formed. The wiring metal film 125 is not attached. This eliminates the need for a removal step for removing the wiring metal film 125 adhering in the reservoir portion 31 and greatly improves manufacturing efficiency. In addition, since the removal process is not necessary, it is not necessary to attach a protective film or the like on the wiring metal film 125. Therefore, the wiring metal film 125 is removed due to the adhesive remaining on the wiring metal film 125. There is no possibility of problems such as inability to pattern well.

  After that, after removing the resist film 200A, as shown in FIG. 9A, the flow path forming substrate wafer 110 is thinned to a predetermined thickness. Next, as shown in FIG. 9B, an insulating protective film 57 is newly formed on the flow path forming substrate wafer 110 and patterned into a predetermined shape. Then, as shown in FIG. 9C, pressure is generated in the flow path forming substrate wafer 110 by anisotropically etching (wet etching) the flow path forming substrate wafer 110 using the insulating protective film 57 as a mask. A chamber 12, an ink supply path 13, a communication path 14, and a communication part 15 are formed. Specifically, the flow path forming substrate wafer 110 is etched with an etchant such as an aqueous solution of potassium hydroxide (KOH) until the elastic film 50 is exposed, whereby the pressure generating chamber 12, the ink supply path 13, The communication path 14 and the communication part 15 are formed simultaneously. Further, the communication part 15 and the reservoir part 31 constituting the reservoir 100 are communicated.

  Further, unnecessary portions of the flow path forming substrate wafer 110 and the reservoir forming substrate wafer 130 are removed by cutting, for example, by dicing. The nozzle plate 20 having the nozzle openings 21 is bonded to the surface of the flow path forming substrate wafer 110 opposite to the reservoir forming substrate wafer 130, and the compliance substrate 40 is attached to the reservoir forming substrate wafer 130. The flow path forming substrate wafers 110 and the like are divided into a single chip size flow path forming substrate 10 as shown in FIG. Then, the drive circuit 122 is mounted on the connection wiring 121 and the drive circuit 122 and the lead electrode 90 are connected by the drive wiring 123, whereby the ink jet recording head having the above-described structure is manufactured.

(Other embodiments)
As mentioned above, although embodiment of this invention was described, the fundamental structure of this invention is not limited to embodiment mentioned above. For example, in the above-described embodiment, the thin film type piezoelectric element is exemplified as the pressure generating means for causing the pressure change in the pressure generating chamber, but the pressure generating means is not limited to this. The pressure generating means is, for example, a thick film type piezoelectric element formed by a method such as attaching a green sheet, or a longitudinal vibration type piezoelectric element in which piezoelectric materials and electrode forming materials are alternately stacked to expand and contract in the axial direction. An element etc. may be sufficient. Further, the pressure generating means may be a heat generating element arranged in the pressure generating chamber, or may be of a type utilizing electrostatic force.

  In the above-described embodiments, the ink jet recording head has been described as an example of the liquid ejecting head. However, the present invention broadly applies to all liquid ejecting heads and ejects liquids other than ink. Of course, the present invention can also be applied to a method of manufacturing a liquid jet head. Other liquid ejecting heads include, for example, various recording heads used in image recording apparatuses such as printers, color material ejecting heads used in the manufacture of color filters such as liquid crystal displays, organic EL displays, and FEDs (field emission displays). Examples thereof include an electrode material ejection head used for electrode formation, a bioorganic matter ejection head used for biochip production, and the like.

FIG. 2 is an exploded perspective view of a recording head according to Embodiment 1 of the invention. 2A and 2B are a plan view and a cross-sectional view of the recording head according to Embodiment 1 of the invention. FIG. 6 is a cross-sectional view illustrating a manufacturing process of the recording head according to the first embodiment of the invention. FIG. 6 is a cross-sectional view illustrating a manufacturing process of the recording head according to the first embodiment of the invention. FIG. 6 is a cross-sectional view illustrating a manufacturing process of the recording head according to the first embodiment of the invention. FIG. 6 is a cross-sectional view illustrating a manufacturing process of the recording head according to the first embodiment of the invention. It is sectional drawing which shows the structure of the connection wiring which concerns on a prior art. It is sectional drawing which shows the structure of the connection wiring which concerns on this invention. FIG. 6 is a cross-sectional view illustrating a manufacturing process of the recording head according to the first embodiment of the invention.

Explanation of symbols

  DESCRIPTION OF SYMBOLS 10 Flow path formation board | substrate, 12 Pressure generation chamber, 16 Protective film, 20 Nozzle plate, 21 Nozzle opening, 30 Reservoir formation board | substrate, 31 Reservoir part, 32 Piezoelectric element holding | maintenance part, 34 Protective film, 35 Adhesive agent, 40 Compliance board | substrate, 50 Elastic film, 60 Lower electrode film, 70 Piezoelectric layer, 80 Upper electrode film, 90 Lead electrode, 100 Reservoir, 110 Flow path forming substrate wafer, 120 Insulating film, 121 Connection wiring, 122 Drive circuit, 125 Metal for wiring Membrane, 130 Wafer for reservoir forming substrate, 300 Piezoelectric element

Claims (5)

A flow path forming substrate having a pressure generating chamber communicating with a nozzle opening for ejecting liquid, a pressure generating means for causing a pressure change in each pressure generating chamber, and a bonding substrate bonded to one side of the flow path forming substrate The bonding substrate has a through portion that penetrates in the thickness direction and communicates with the pressure generating chamber, and a wiring pattern is provided on a surface of the bonding substrate opposite to the flow path forming substrate. A method for manufacturing a liquid jet head, comprising:
A metal film forming step of forming a wiring metal film to be the wiring pattern on one surface of the bonding substrate via an insulating film, and dry etching the bonding substrate from the other side to the insulating film. A recessed portion forming step for forming a recessed portion to be the through portion, a bonding step for bonding the bonded substrate to the flow path forming substrate, and a removing step for removing the wiring metal film in a region facing the recessed portion by dry etching. The wiring metal film in another region is patterned by dry etching to form the wiring pattern, and at the same time, the insulating film in the region facing the recess is removed and the recess is opened to form the through portion And a patterning step to perform the manufacturing method of the liquid ejecting head.   After the penetrating portion forming step, the method further includes a step of forming a protective film made of a material having liquid resistance on the inner surface of the penetrating portion, and in the patterning step, the insulating film and the protection in the region facing the concave portion The method of manufacturing a liquid jet head according to claim 1, wherein the film is removed to open the recess.   The method of manufacturing a liquid jet head according to claim 1, wherein the bonding substrate is made of a silicon substrate, and the insulating film is made of a silicon dioxide film formed by thermally oxidizing the bonding substrate.   The said penetration part provided in the said joining board | substrate is a reservoir part which comprises at least one part of the reservoir | reserver connected to the said several pressure generation chamber, The Claim 1 characterized by the above-mentioned. A method for manufacturing a liquid jet head.   The method of manufacturing a liquid jet head according to claim 1, wherein the wiring metal film is formed by a sputtering method.

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