JP2008073961A - Manufacturing method of liquid jet head, liquid jet head and liquid ejection device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a manufacturing method of liquid jet head, a liquid jet head and a liquid ejection device which can certainly prevent a clogging caused by foreign substance and improve yield and reliability. <P>SOLUTION: The manufacturing method concerned includes: a process of forming a perforation part 51 in an oscillating board 50 while forming a recess in the area opposite to the perforation part 51; a process of forming an isolation layer 190 for sealing the perforation part 51 on a conduit formation substrate while forming a protrusion 191 projected to the side of a communication part 13; a process of joining a reservoir formation substrate 130 to the conduit formation substrate; a process of making the protrusion 191 exposed while forming a pressure generating chamber and the communication part 13 by applying a wet etching to the conduit formation substrate; a process of forming a protective film 16 on the inner surface of the conduit formation substrate and on the surface of the communication part 13 side of the isolation layer 190; a process of eliminating the protective film 16 on the isolation layer 190; and a process of forming a reservoir 100 with making the reservoir part 31 communicated to the communication part 13 by eliminating the isolation layer 190. <P>COPYRIGHT: (C)2008,JPO&INPIT

Description

  The present invention relates to a method for manufacturing a liquid ejecting head that ejects liquid from a nozzle opening, a liquid ejecting head, and a liquid ejecting apparatus, and more particularly to a method for manufacturing an ink jet recording head that ejects ink as liquid, an ink jet recording head, and ink jet recording. Relates to the device.

  As an ink jet recording head that is a liquid ejecting head, for example, a pressure generating chamber that communicates with a nozzle opening and is partitioned by a partition, and an ink supply path and ink that communicate with a pressure generating chamber partitioned by an extended partition A flow path forming substrate having a communication path communicating with the supply path, a communication portion communicating with the communication path and communicating with the plurality of pressure generating chambers, and a piezoelectric element formed on one side of the flow path forming substrate Some devices include a device and a reservoir forming substrate having a reservoir portion that is joined to the surface of the flow path forming substrate on the piezoelectric element side and forms a part of the reservoir together with the communication portion.

  In addition, as a method for manufacturing an ink jet recording head, a reservoir forming substrate having a reservoir portion on one side of the flow path forming substrate after forming a boron dope layer (an isolation layer of the present invention) on one surface of the flow path forming substrate. After that, the pressure generating chamber and the communication portion are formed by anisotropically etching the flow path forming substrate from the other surface side, and then the reservoir portion and the communication portion are communicated with each other through the boron dope layer. Has been proposed (see, for example, Patent Document 1). By forming the ink jet recording head by such a manufacturing method, when the pressure generating chamber and the communication portion are formed on the flow path forming substrate, the etching solution is supplied by the isolation layer via the communication portion and the reservoir portion. The reservoir forming substrate is prevented from being etched.

  Further, an ink jet recording head has been proposed in which a liquid-resistant protective film made of tantalum oxide is provided on the inner surface of a flow path forming substrate such as a pressure generating chamber (see, for example, Patent Document 2).

Japanese Patent Laying-Open No. 2005-219243 (FIGS. 3-5, pages 6-8) JP 2004-262225 A (FIG. 2, pages 12-13)

  However, since the protective film formed on the isolation layer is provided so as to extend in the surface direction from the pressure generating chamber side, the protective film is provided in the through portion of the diaphragm that communicates the communication portion and the reservoir portion. There is a problem that it is difficult to break at the boundary, and a residue in which a part of the protective film protrudes like a bowl in the penetrating portion is generated, or a crack or the like is generated in the protective film due to a failure to break.

  Such protective film residues are likely to be peeled off when the liquid flows, and the clogging of the nozzle openings is caused by the protective film residues that have been peeled off, resulting in a decrease in yield and reliability. There is a problem.

  Such a problem exists not only in a method for manufacturing an ink jet recording head that discharges ink, but also in a method for manufacturing another liquid ejecting head that discharges liquid other than ink.

  In view of such circumstances, the present invention provides a method of manufacturing a liquid ejecting head, a liquid ejecting head, and a liquid ejecting apparatus that can reliably prevent ejection defects such as clogging due to foreign matters and improve yield and reliability. The task is to do.

  According to a first aspect of the present invention for solving the above problems, there is provided a pressure generating chamber that communicates with a nozzle opening that ejects liquid, and a reservoir that communicates with a plurality of pressure generating chambers and serves as a common liquid chamber of the pressure generating chamber. A vibration plate is formed on one surface side of the flow path forming substrate provided with a part of the communication portion, and a piezoelectric element including a lower electrode, a piezoelectric layer, and an upper electrode is formed on the vibration plate, and the vibration Forming a penetrating portion that opens in a region facing the communicating portion of the plate, and forming a recess at least in the vicinity of the peripheral portion of the penetrating portion in the region facing the penetrating portion of the flow path forming substrate; Forming a projecting portion projecting toward the region where the communicating portion is formed by forming an isolation layer that seals the penetrating portion over the inner surface of the concave portion on the one surface side of the flow path forming substrate. And a part of the reservoir in communication with the communication portion. Bonding the reservoir forming substrate having the reservoir portion to the one surface side of the flow path forming substrate and wet etching the flow channel forming substrate from the other surface side until the diaphragm and the isolation layer are exposed. Thereby forming the pressure generating chamber and the communication portion, exposing the isolation layer and exposing the protruding portion protruding toward the communication portion, and the pressure generating chamber of the flow path forming substrate, Forming a protective film made of a liquid-resistant material over the protrusion on the inner surface of the communication part and the surface of the isolation layer on the communication part side; and the protective film on the isolation layer; A method of manufacturing a liquid jet head, comprising: a step of peeling and removing; and a step of forming the reservoir by communicating the reservoir portion and the communication portion by removing the isolation layer. A.

  In the first aspect, since foreign matter such as machining residue is not generated when the reservoir portion and the communication portion are communicated with each other, defective discharge such as nozzle clogging due to foreign matter such as machining residue can be prevented. . In particular, since the protective film having a region bent along the protruding portion is peeled off, the protective film can be easily and surely broken in the bent region, and the residue protruding in a hook shape on the crack or the penetrating portion side Can be prevented and clogging of the nozzle opening due to peeling of the residue can be prevented.

  According to a second aspect of the present invention, in the step of forming the protective film, the protective film is formed on the isolation layer having the projecting portion, whereby the vibration is generated in the protective film near the periphery of the penetrating portion. Forming a first bent portion bent from the plate toward the communication portion and a second bent portion bent closer to the center of the penetrating portion than the first bent portion, and on the isolation layer In the method of manufacturing the liquid jet head according to the first aspect, in the step of peeling and removing the protective film, the protective film is broken at the first bent portion or the second bent portion. .

  In the second aspect, the protective film can be broken at the first bent portion or the second bent portion.

  According to a third aspect of the present invention, in the step of forming the isolation layer, a lead electrode drawn from the piezoelectric element is formed on the one surface side of the flow path forming substrate, and from the same layer as the lead electrode. However, the lead electrode includes the step of forming the isolation layer composed of a discontinuous wiring layer.

  In the third aspect, since the lead electrode and the isolation layer composed of the wiring layer can be formed simultaneously, the manufacturing process can be simplified and the cost can be reduced.

  According to a fourth aspect of the present invention, in the step of forming the concave portion, the concave portion having a V-shaped cross section is formed in the circumferential direction in the vicinity of the peripheral edge portion of the through portion of the flow path forming substrate. The method of manufacturing a liquid jet head according to any one of the first to third aspects.

  In the fourth aspect, a V-shaped projecting portion projecting toward the communicating portion side is formed in the isolation layer, so that a region bent in the protective film can be formed. It can be surely broken.

  According to a fifth aspect of the present invention, in the step of forming the concave portion, the first concave portion and the bottom surface angle of the first concave portion over the entire surface of the region facing the through portion of the flow path forming substrate. In the method of manufacturing a liquid jet head according to any one of the first to third aspects, the concave portion including the second concave portion deeper than the first concave portion is formed in a region corresponding to the portion.

  In the fifth aspect, since the penetrating portion and the concave portion can be formed at the same time, the manufacturing process can be simplified.

  According to a sixth aspect of the present invention, in any of the first to third aspects, in the step of forming the concave portion, the concave portion is formed over a region facing the penetrating portion of the flow path forming substrate. The method of manufacturing a liquid jet head according to any of the above aspects.

  In the sixth aspect, a protrusion having a desired shape is formed on the isolation layer, and a region bent in the protective film can be formed, and the protective film can be easily and reliably broken in the bent region. it can.

  According to a seventh aspect of the present invention, in the step of forming the concave portion, the concave portion is formed so as to include a region facing the through portion of the flow path forming substrate and to have an opening larger than the through portion. The liquid jet head manufacturing method according to the sixth aspect is characterized.

  In the seventh aspect, even if a minute protrusion remains in the broken area of the protective film, the liquid does not directly contact when the liquid flows in, and the nozzle opening can be reliably prevented from being clogged.

  According to an eighth aspect of the present invention, in the step of forming the concave portion, the concave portion is formed so that an angle between a side surface of the concave portion and a surface of the diaphragm on the flow path forming substrate side becomes an obtuse angle. The liquid jet head manufacturing method according to the sixth or seventh aspect is characterized.

  In the eighth aspect, the protective film can be bent at an acute angle, and the protective film can be more reliably broken at the bent region.

  According to a ninth aspect of the present invention, in the step of forming the diaphragm, the end surface on the penetrating portion side is formed so that a cross section thereof is circular, and is opposed to the communication portion of the flow path forming substrate. In the method of manufacturing a liquid jet head according to any one of the first to eighth aspects, the first surface of the region to be formed is formed so as to be between the depth directions of the penetrating portion of the diaphragm.

  In the ninth aspect, the contact of the isolation layer can be improved, and the etching solution can be reliably prevented from flowing out to the reservoir forming substrate side.

  In a tenth aspect of the present invention, the flow path forming substrate is made of a silicon single crystal substrate, and in the step of forming the diaphragm, a silicon nitride film is formed in a region where the through portion of the flow path forming substrate is provided. In the method of manufacturing a liquid jet head according to the ninth aspect, the vibration plate made of silicon oxide is formed by thermally oxidizing the flow path forming substrate.

  In the tenth aspect, the end surface on the penetrating portion side of the diaphragm can be easily and reliably formed so that the cross section is circular.

  In an eleventh aspect of the present invention, in the step of forming the recess, the flow path forming substrate is wet-etched using the diaphragm having the through portion as a mask before the piezoelectric element is formed. In the method of manufacturing a liquid jet head according to any one of the first to tenth aspects, a recess is formed.

  In the eleventh aspect, the recess can be formed with high accuracy by forming the recess before forming the piezoelectric element.

  According to a twelfth aspect of the present invention, in the step of forming the recess, the liquid jet head manufacturing method according to any one of the first to tenth aspects is performed by dry etching the flow path forming substrate. It is in.

  In the twelfth aspect, the recess can be easily formed in a desired shape.

  A thirteenth aspect of the present invention is the liquid jet head manufacturing method according to the twelfth aspect, wherein the dry etching is ion milling or reactive ion etching.

  In the thirteenth aspect, the recess can be easily formed in a desired shape by ion milling or reactive ion etching.

  A fourteenth aspect of the present invention is the method of manufacturing a liquid jet head according to any one of the first to thirteenth aspects, wherein an oxide or a nitride is used as a material for the protective film.

  In the fourteenth aspect, it is possible to reliably prevent the inner surfaces of the pressure generation chamber, the communication portion, and the like from being eroded by the supplied liquid.

  According to a fifteenth aspect of the present invention, in the method for manufacturing a liquid jet head according to the fourteenth aspect, tantalum oxide is used as a material for the protective film.

  In the fifteenth aspect, it is possible to reliably prevent the inner surfaces of the pressure generation chamber, the communication portion, and the like from being eroded by the supplied liquid.

  According to a sixteenth aspect of the present invention, in the step of peeling off the protective film, after forming a release layer having an internal stress of compressive stress on the protective film, the release layer is peeled off together with the release layer. In the method of manufacturing a liquid jet head according to any one of the first to fifteenth aspects, the protective film on the isolation layer is peeled off.

  In the sixteenth aspect, the protective film on the isolation layer can be more easily and reliably removed by the release layer.

  According to a seventeenth aspect of the present invention, in the liquid jet head according to the sixteenth aspect, the adhesion force between the peeling layer and the protective film is greater than the adhesion force between the protective film and the isolation layer. Is in the way.

  In the seventeenth aspect, since the release layer and the protective film are in good contact, the protective film on the isolation layer can be more easily and reliably removed together with the release layer.

  According to an eighteenth aspect of the present invention, in the liquid jet head manufacturing method according to the sixteenth or seventeenth aspect, titanium tungsten is used as the material of the release layer.

  In the eighteenth aspect, by forming the release layer with a predetermined material, the protective film on the isolation layer can be more easily and reliably removed together with the release layer.

  According to a nineteenth aspect of the present invention, the method further includes the step of removing a part in the thickness direction of the isolation layer exposed in the communication portion before the step of forming the protective film. The method of manufacturing a liquid jet head according to any one of -18.

  In the nineteenth aspect, since the adhesion between the isolation layer and the protective film is weakened, the protective film on the isolation layer can be removed more reliably and reliably.

  In a twentieth aspect of the present invention, the isolation layer comprises an adhesion layer and a metal layer formed on the adhesion layer, and the surface of the isolation layer is light-etched before the step of forming the protective film. Then, at least the adhesive layer is removed, in the liquid jet head manufacturing method according to the nineteenth aspect.

  In the twentieth aspect, by performing light etching on the isolation layer, a part of the metal layer in which the adhesion layer has diffused is removed together with the adhesion layer, so that the adhesion between the isolation layer and the protective film is more reliably weakened. Therefore, the protective film on the isolation layer can be removed better and reliably.

  A twenty-first aspect of the present invention is a liquid jet head manufactured by the manufacturing method according to any one of the first to twentieth aspects.

  In the twenty-first aspect, it is possible to realize a liquid ejecting head with improved reliability by preventing cracks in the protective film and clogging of the nozzle openings.

  According to a twenty-second aspect of the present invention, in the liquid jet according to the twenty-first aspect, a fracture surface on the penetrating portion side of the protective film formed on the diaphragm is directed to the communicating portion side. In the head.

  In the twenty-second aspect, even when a residue that protrudes slightly on the fracture surface of the protective film is generated, the liquid does not directly contact when the liquid flows in, preventing the separation of the residue and clogging the nozzle opening. Can be prevented.

  A twenty-third aspect of the present invention is a liquid ejecting apparatus including the liquid ejecting head according to the twenty-first or twenty-second aspect.

  In the twenty-third aspect, a liquid ejecting apparatus with improved reliability can be realized.

  Hereinafter, the present invention will be described in detail based on embodiments.

(Embodiment 1)
FIG. 1 is an exploded perspective view showing a schematic configuration of an ink jet recording head which is an example of a liquid jet head according to Embodiment 1 of the present invention. FIG. 2 is a plan view of FIG. FIG. 3 is an enlarged cross-sectional view of a main part of FIG.

  As shown in the drawing, the flow path forming substrate 10 is made of a silicon single crystal substrate having a crystal plane orientation of (110) in this embodiment, and one surface thereof has a thickness of 0. An elastic film 50 of 5 to 2 μm is formed.

  In the flow path forming substrate 10, pressure generating chambers 12 partitioned by a plurality of partition walls 11 are arranged in parallel in the width direction (short direction) by anisotropic etching from the other surface side. In addition, an ink supply path 14 and a communication path 15 are partitioned by a partition wall 11 on one end side in the longitudinal direction of the pressure generating chamber 12 of the flow path forming substrate 10. In addition, a communication portion 13 constituting a part of the reservoir 100 serving as an ink chamber (liquid chamber) common to the pressure generation chambers 12 is formed at one end of the communication passage 15. That is, the flow path forming substrate 10 is provided with a liquid flow path including a pressure generation chamber 12, a communication portion 13, an ink supply path 14, and a communication path 15.

  The ink supply path 14 communicates with one end side in the longitudinal direction of the pressure generation chamber 12 and has a smaller cross-sectional area than the pressure generation chamber 12. For example, in the present embodiment, the ink supply path 14 has a width smaller than the width of the pressure generation chamber 12 by narrowing the flow path on the pressure generation chamber 12 side between the reservoir 100 and each pressure generation chamber 12 in the width direction. The flow path resistance of the ink flowing into the pressure generating chamber 12 from the communication portion 13 is kept constant. As described above, in this embodiment, the ink supply path 14 is formed by narrowing the width of the flow path from one side. However, the ink supply path may be formed by narrowing the width of the flow path from both sides. Further, the ink supply path may be formed by narrowing from the thickness direction instead of narrowing the width of the flow path. Further, each communication path 15 communicates with the side of the ink supply path 14 opposite to the pressure generation chamber 12 and has a larger cross-sectional area than the width direction (short direction) of the ink supply path 14. In this embodiment, the communication passage 15 is formed with the same cross-sectional area as the pressure generation chamber 12.

  In other words, the flow path forming substrate 10 is connected to the pressure generation chamber 12, the ink supply path 14 having a smaller cross-sectional area in the short direction of the pressure generation chamber 12, the ink supply path 14, and the ink supply. A communication passage 15 having a cross-sectional area larger than the cross-sectional area in the short direction of the path 14 is provided by being partitioned by a plurality of partition walls 11.

Here, a material having ink resistance, for example, tantalum pentoxide (Ta ₂ O ₅ ) is formed on the inner wall surfaces of the pressure generation chamber 12, the communication portion 13, the ink supply path 14, and the communication path 15 of the flow path forming substrate 10. A protective film 16 made of tantalum oxide or the like is provided with a thickness of about 50 nm. The ink resistance referred to here is etching resistance against alkaline ink.

The material of the protective film 16 is not limited to tantalum oxide, and depending on the pH value of the ink used, for example, zirconium oxide (ZrO ₂ ), nickel (Ni), chromium (Cr) or the like is used. Also good.

  In the present embodiment, the elastic film 50 constituting the diaphragm is provided with a through portion 51 that communicates the communication portion 13 and a reservoir portion 31 of the reservoir forming substrate 30 described later in detail. As shown in FIG. 3, the protective film 16 provided on the surface of the elastic film 50 on the flow path forming substrate 10 side is provided by being broken in the vicinity of the opening of the penetrating portion 51 of the elastic film 50. The broken fracture surface 16a of the protective film 16 is provided facing the communication portion 13 side. As described above, since the fracture surface 16a of the protective film 16 faces the communication portion 13, even when the protective film 16 is broken, even if the protective film 16 remains on the fracture surface 16a so as to protrude, the reservoir portion 31. The remaining protective film 16 does not peel off due to the flow of ink from the nozzles, and clogging of the nozzle openings 21 can be prevented.

  The inner surface of the penetrating part 51 is formed as an inclined surface so that the angle between the inner surface of the penetrating part 51 and the surface of the elastic film 50 on the flow path forming substrate 10 side is an acute angle. In this way, by forming the inner surface of the penetrating portion 51 as an inclined surface, the protective film 16 on the isolation layer can be removed together with the release layer satisfactorily and reliably by a manufacturing method described in detail later.

  As shown in FIGS. 1 and 2, a nozzle opening 21 communicating with the vicinity of the end portion of each pressure generating chamber 12 opposite to the ink supply path 14 is formed on the opening surface side of the flow path forming substrate 10. The provided nozzle plate 20 is fixed by an adhesive, a heat welding film, or the like. The nozzle plate 20 is made of, for example, glass ceramics, a silicon single crystal substrate, stainless steel, or the like.

  On the other hand, the elastic film 50 made of silicon dioxide and having a thickness of, for example, about 1.0 μm is formed on the side opposite to the opening surface of the flow path forming substrate 10 as described above. Further, the elastic film 50 is made of a lower electrode film 60 having a thickness of about 0.1 to 0.5 μm and lead zirconate titanate (PZT) which is an example of a piezoelectric film. A piezoelectric layer 70 having a thickness of about 1.1 μm and an upper electrode film 80 having a thickness of, for example, about 0.05 μm are laminated by a process described later to constitute the piezoelectric element 300. Here, the piezoelectric element 300 refers to a portion including the lower electrode film 60, the piezoelectric layer 70, and the upper electrode film 80. In general, one electrode of the piezoelectric element 300 is used as a common electrode, and the other electrode and the piezoelectric layer 70 are patterned for each pressure generating chamber 12. In this case, a portion that is configured by any one of the patterned electrodes and the piezoelectric layer 70 and in which piezoelectric distortion is generated by applying a voltage to both electrodes is referred to as a piezoelectric active portion 320. In this embodiment, the lower electrode film 60 is a common electrode of the piezoelectric element 300, and the upper electrode film 80 is an individual electrode of the piezoelectric element 300. However, there is no problem even if this is reversed for the convenience of the drive circuit and wiring. In any case, the piezoelectric active part 320 is formed for each pressure generating chamber 12. In addition, here, the piezoelectric element 300 and the diaphragm that is displaced by driving the piezoelectric element 300 are collectively referred to as an actuator device. In the above-described example, the elastic film 50, the insulator film 55, and the lower electrode film 60 function as a diaphragm. However, without providing the insulator film 55, the elastic film 50 and the lower electrode film 60 are used as the diaphragm. Also good.

  In addition, a lead electrode 90 composed of a wiring layer 190 including an adhesion layer 91 and a metal layer 92 is connected to the upper electrode film 80 of each piezoelectric element 300, and each piezoelectric element is connected via the lead electrode 90. A voltage is selectively applied to the element 300.

  As will be described in detail later, the diaphragm in the region corresponding to the peripheral edge of the opening of the communication portion 13, that is, the elastic film 50, also includes the adhesion layer 91 and the metal layer 92, but is discontinuous with the lead electrode 90. A wiring layer 190 is present.

  Further, a reservoir forming substrate 30 having a reservoir portion 31 constituting at least a part of the reservoir 100 is joined to the surface of the flow path forming substrate 10 on the piezoelectric element 300 side. In this embodiment, the flow path forming substrate 10 and the reservoir forming substrate 30 are bonded using the adhesive 35. The reservoir portion 31 of the reservoir forming substrate 30 communicates with the communication portion 13 through a through portion 51 provided in the elastic film 50, and the reservoir 100 is formed by the reservoir portion 31 and the communication portion 13.

  In addition, a piezoelectric element holding portion 32 is provided in a region facing the piezoelectric element 300 of the reservoir forming substrate 30. Since the piezoelectric element 300 is formed in the piezoelectric element holding portion 32, the piezoelectric element 300 is protected in a state hardly affected by the external environment. In addition, the piezoelectric element holding | maintenance part 32 may be sealed and does not need to be sealed. Examples of the material of the reservoir forming substrate 30 include glass, ceramic material, metal, resin, and the like, but it is preferable that the reservoir forming substrate 30 be formed of a material substantially the same as the coefficient of thermal expansion of the flow path forming substrate 10. In this embodiment, the silicon single crystal substrate made of the same material as the flow path forming substrate 10 is used.

  A drive circuit 200 for driving the side-by-side piezoelectric elements 300 is fixed on the reservoir forming substrate 30. For example, a circuit board or a semiconductor integrated circuit (IC) can be used as the drive circuit 200. The drive circuit 200 and the lead electrode 90 are electrically connected via a connection wiring 210 made of a conductive wire such as a bonding wire.

  Furthermore, a compliance substrate 40 including a sealing film 41 and a fixing plate 42 is bonded onto a region corresponding to the reservoir portion 31 of the reservoir forming substrate 30. The sealing film 41 is made of a material having low rigidity and flexibility (for example, a polyphenylene sulfide (PPS) film having a thickness of 6 μm). The sealing film 41 seals one surface of the reservoir unit 31. Yes. The fixing plate 42 is made of a hard material such as metal (for example, stainless steel (SUS) having a thickness of 30 μm). Since the region of the fixing plate 42 facing the reservoir 100 is an opening 43 that is completely removed in the thickness direction, one surface of the reservoir 100 is sealed only with a flexible sealing film 41. Has been.

  In such an ink jet recording head of this embodiment, ink is taken in from an external ink supply unit (not shown), filled with ink from the reservoir 100 to the nozzle opening 21, and then in accordance with a recording signal from the drive circuit 200. By applying a voltage between each of the lower electrode film 60 and the upper electrode film 80 corresponding to the pressure generation chambers 12 to bend and deform the piezoelectric element 300 and the diaphragm, the pressure in each pressure generation chamber 12 increases. Ink is ejected from the nozzle openings 21.

  Hereinafter, a method for manufacturing such an ink jet recording head will be described with reference to FIGS. 4 to 10 are cross-sectional views in the longitudinal direction of the pressure generating chamber showing the method of manufacturing the ink jet recording head.

  First, as shown in FIG. 4A, a flow path forming substrate wafer 110, which is a silicon wafer, is thermally oxidized in a diffusion furnace at about 1100 ° C., and a silicon dioxide film 53 constituting an elastic film 50 is formed on the surface thereof. To do. In the present embodiment, a silicon wafer having a relatively thick and high rigidity of about 625 μm is used as the flow path forming substrate wafer 110.

Next, as shown in FIG. 4B, an insulator film 55 made of zirconium oxide is formed on the elastic film 50 (silicon dioxide film 53), and the insulator film 55 is patterned into a predetermined shape. Specifically, after forming a zirconium (Zr) layer on the elastic film 50 (silicon dioxide film 53) by, for example, sputtering, the zirconium layer is thermally oxidized in a diffusion furnace at 500 to 1200 ° C., for example. Thus, the insulator film 55 made of zirconium oxide (ZrO ₂ ) is formed. In addition, by performing wet etching or dry etching on the insulator film 55, an opening 56 having an opening area larger than that of the through part 51 is formed in a region where the through part 51 of the elastic film 50 is formed.

  Next, as shown in FIG. 4C, the silicon dioxide film 53 that becomes the elastic film 50 is penetrated in the thickness direction that exposes the surface of the flow path forming substrate wafer 110 in the region where the communication portion 13 is formed. The recessed portion 52 is formed over the entire area of the region facing the through portion 51 of the flow path forming substrate wafer 110. The formation method of such a penetration part 51 and the recessed part 52 is not specifically limited, Dry etching, wet etching, etc., such as ion milling or reactive ion etching (RIE), are mentioned. Specifically, for example, the through portion 51 and the recess 52 may be formed simultaneously by ion milling the silicon dioxide film 53 and the flow path forming substrate wafer 110. Moreover, after forming the penetration part 51 by reactive ion etching of the silicon dioxide film 53, the recess 52 can be formed by reactive ion etching of the flow path forming substrate wafer 110 with the gas changed. . Further, for example, after forming the through portion 51 by reactive ion etching of the silicon dioxide film 53, the channel forming substrate wafer 110 is wet etched using the silicon dioxide film 53 having the through portion 51 as a mask. The recess 52 may be formed. Of course, the through portion 51 may be formed by wet etching the silicon dioxide film 53.

  In this embodiment, after forming the penetration part 51 by reactive ion etching of the silicon dioxide film 53, the recess 52 is formed by reactive ion etching of the flow path forming substrate wafer 110 by changing the gas. The recess 52 formed by such a method has a side surface continuous with the inner surface of the through portion 51, and the side surface is formed perpendicular to the surface of the flow path forming substrate wafer 110.

  In this embodiment, after the silicon dioxide film 53 and the insulator film 55 constituting the elastic film 50 are formed on the flow path forming substrate wafer 110, the through portion 51 is formed in the elastic film 50 and the flow path is formed. The recess 52 is formed in the formation substrate wafer 110, but the invention is not limited to this. For example, after the elastic film 50 is formed on the flow path formation substrate wafer 110, before the insulator film 55 is formed. You may make it form the penetration part 51 and the recessed part 52. FIG. Further, when the through portion 51 or the recess 52 is formed by wet etching at least one of the elastic film 50 and the flow path forming substrate wafer 110, the flow path forming substrate wafer 110 is formed on the flow path forming substrate wafer 110 as in the present embodiment. Before the piezoelectric element 300 is formed, the through portion 51 and the concave portion 52 may be formed. However, when the through portion 51 and the concave portion 52 are formed by dry etching the elastic film 50 and the flow path forming substrate wafer 110. In detail, the penetrating part 51 and the recessed part 52 may be formed at any timing as long as it is a pre-process for forming the wiring layer 190 as an isolation layer to be described later. That is, the penetrating part 51 and the recessed part 52 may be formed after the piezoelectric element 300 is formed.

  Next, as illustrated in FIG. 5A, for example, platinum and iridium are stacked on the elastic film 50 to form the lower electrode film 60, and then the lower electrode film 60 is patterned into a predetermined shape. Next, as shown in FIG. 5B, a piezoelectric layer 70 made of, for example, lead zirconate titanate (PZT) or the like, and an upper electrode film 80 made of, for example, iridium, are connected to the wafer 110 for flow path forming substrate. The piezoelectric element 300 is formed by patterning the piezoelectric layer 70 and the upper electrode film 80 in regions facing the pressure generation chambers 12.

The material of the piezoelectric layer 70 constituting the piezoelectric element 300 is, for example, a ferroelectric piezoelectric material such as lead zirconate titanate (PZT), or niobium, nickel, magnesium, bismuth, yttrium, or the like. A relaxor ferroelectric or the like to which a metal is added is used. The composition may be appropriately selected in consideration of the characteristics, application, etc. of the piezoelectric element 300. For example, PbTiO ₃ (PT), PbZrO ₃ (PZ), Pb (Zr _x Ti _1-x ) O ₃ (PZT) ), Pb (Mg _1/3 Nb _2/3 ) O ₃ -PbTiO ₃ (PMN-PT), Pb (Zn _1/3 Nb _2/3 ) O ₃ -PbTiO ₃ (PZN-PT), Pb (Ni ₁ ) _{/ 3 Nb 2/3) O 3 -PbTiO} 3 (PNN-PT), Pb (In 1/2 Nb 1/2) O 3 -PbTiO 3 (PIN-PT), Pb (Sc 1/2 Ta 1/2 _{) O 3 -PbTiO 3 (PST-} PT), Pb (Sc 1/2 Nb 1/2) O 3 -PbTiO 3 (PSN-PT), BiScO 3 -PbTiO 3 (BS-PT), BiYbO 3 -PbTiO 3 (BY PT), and the like.

  The method for forming the piezoelectric layer 70 is not particularly limited. For example, in this embodiment, a so-called sol in which a metal organic material is dissolved and dispersed in a solvent is applied, dried, gelled, and further fired at a high temperature. The piezoelectric layer 70 was formed by using a so-called sol-gel method for obtaining a piezoelectric layer 70 made of an oxide. The method for manufacturing the piezoelectric layer 70 is not limited to the sol-gel method, and for example, a MOD (Metal-Organic Decomposition) method or a sputtering method may be used.

  Next, as shown in FIG. 5C, lead electrodes 90 are formed. Specifically, first, the metal layer 92 is formed over the entire surface of the flow path forming substrate wafer 110 via the adhesion layer 91, and the wiring layer 190 including the adhesion layer 91 and the metal layer 92 is formed. Then, a mask pattern (not shown) made of, for example, a resist or the like is formed on the wiring layer 190, and the metal layer 92 and the adhesion layer 91 are patterned for each piezoelectric element 300 through the mask pattern, thereby leading to the lead electrode. 90 is formed. At this time, a wiring layer 190 discontinuous with the lead electrode 90 is left in a region corresponding to the through portion 51 and the recess 52, and the through portion 51 is sealed by the wiring layer 190. That is, in this embodiment, the isolation layer that separates the reservoir portion 31 and the communication portion 13 is made of the same layer as the lead electrode 90, but is independent of the lead electrode 90 and is not electrically connected. The wiring layer 190 thus formed is formed. Thereby, the wiring layer 190 which is an isolation layer can be formed simultaneously with the lead electrode 90, and the manufacturing process can be simplified and the cost can be reduced. The isolation layer is not particularly limited as long as it is a material having etching resistance when wet etching the flow path forming substrate wafer 110 described in detail later. For example, after forming the lead electrode 90, You may make it form separate isolation layers, such as a metal material and a resin material.

  When the wiring layer 190 which is an isolation layer is formed in this way, the wiring layer 190 provided in the region corresponding to the through portion 51 and the recess 52 is formed on the inner surface of the through portion 51 and the flow path forming substrate wafer on the elastic film 50. 110 is formed along the inner surface of the recess 52. That is, the wiring layer 190 has a protruding portion 191 that protrudes along the inner surface of the concave portion 52 toward the region where the communicating portion 13 is formed.

  Here, the main material of the metal layer 92 is not particularly limited as long as it is a material having relatively high conductivity, and examples thereof include gold (Au), platinum (Pt), aluminum (Al), and copper (Cu). In this embodiment, gold (Au) is used. The material of the adhesion layer 91 may be any material that can ensure the adhesion of the metal layer 92. Specifically, titanium (Ti), titanium tungsten compound (TiW), nickel (Ni), chromium (Cr ) Or a nickel chromium compound (NiCr), etc., and in this embodiment, a titanium tungsten compound (TiW) is used.

  Next, as illustrated in FIG. 6A, the reservoir forming substrate wafer 130 is bonded onto the flow path forming substrate wafer 110 with an adhesive 35. Here, a reservoir section 31, a piezoelectric element holding section 32, and the like are formed in advance on the reservoir forming substrate wafer 130. The reservoir forming substrate wafer 130 is, for example, a silicon wafer having a thickness of about 400 μm, and the rigidity of the flow path forming substrate wafer 110 is significantly improved by bonding the reservoir forming substrate wafer 130. Become.

Next, as shown in FIG. 6B, the flow path forming substrate wafer 110 was processed to a certain thickness. Next, as shown in FIG. 6C, a mask film 54 made of, for example, silicon nitride (Si _x N _y ) is newly formed on the flow path forming substrate wafer 110 and patterned into a predetermined shape. Then, as shown in FIG. 7A, the flow path forming substrate wafer 110 is anisotropically etched (wet etching) through the mask film 54, so that the flow path forming substrate wafer 110 has a liquid flow path, In the present embodiment, the pressure generation chamber 12, the communication part 13, the ink supply path 14, the communication path 15 and the like are formed. Specifically, the pressure is obtained by etching the flow path forming substrate wafer 110 with an etching solution such as an aqueous potassium hydroxide (KOH) solution until the elastic film 50 and the adhesion layer 91 (metal layer 92) are exposed. The generation chamber 12, the communication part 13, the ink supply path 14, and the communication path 15 are formed simultaneously. In the present embodiment, the communication portion 13 is formed such that the opening edge on the diaphragm (elastic film 50) side is located outside the opening edge of the penetrating portion 51. That is, the communication part 13 is formed such that the opening on the diaphragm side is larger than the through part 51.

  Further, when the liquid flow path such as the pressure generation chamber 12 is formed in this way, the through portion 51 is sealed by the wiring layer 190 including the adhesion layer 91 and the metal layer 92, and thus the through portion 51 is interposed therebetween. The etching solution does not flow into the reservoir forming substrate wafer 130 side. As a result, the etching solution does not adhere to the connection wiring (not shown) provided on the surface of the reservoir forming substrate wafer 130, and the occurrence of defects such as disconnection can be prevented. Further, there is no possibility that the etchant enters the reservoir portion 31 and the reservoir forming substrate wafer 130 is etched.

When forming such a pressure generating chamber 12 or the like, the surface of the reservoir forming substrate wafer 130 opposite to the flow path forming substrate wafer 110 is formed on an anti-alkali material such as PPS (polyphenylene sulfide). ), PPTA (polyparaphenylene terephthalamide) or the like may be further sealed. Thereby, defects such as disconnection of wiring provided on the surface of the reservoir forming substrate wafer 130 can be more reliably prevented.

  When the liquid flow path such as the pressure generation chamber 12 is formed on the flow path forming substrate wafer 110 in this way, the protruding portion 191 that protrudes to the communication portion 13 side of the wiring layer 190 is brought to the communication portion 13 side through the through portion 51. Exposed.

  Next, as shown in FIG. 7B, a part of the wiring layer 190 in the penetrating part 51 is removed by wet etching (light etching) from the communicating part 13 side. That is, the adhesion layer 91 exposed to the communication portion 13 side of the protruding portion 191 and a part of the metal layer 92 in which the adhesion layer 91 is diffused are removed by etching. As will be described in detail later, the adhesion between the protective film 16 formed on the protruding portion 191 of the wiring layer 190 and the wiring layer 190 in a later step is weakened, and the protective film 16 on the wiring layer 190 is peeled off. It becomes easy to do.

  Next, the mask film 54 on the surface of the flow path forming substrate wafer 110 is removed, and as shown in FIG. 7C, for example, a material having liquid resistance (ink resistance) such as oxide or nitride, In the present embodiment, the protective film 16 made of tantalum pentoxide is formed on the surface of each liquid flow path of the flow path forming substrate wafer 110 by a CVD method or the like.

  At this time, as shown in FIG. 9A, since the protruding portion 191 of the wiring layer 190 is exposed at the communication portion 13, the protective film 16 is provided on one surface of the elastic film 50 on the pressure generating chamber 12 side. To the exposed protruding portion 191 of the wiring layer 190. Thus, the protective film 16 formed on the elastic film 50 includes a first bent portion 192 that is bent toward the communication portion 13 on the peripheral edge side of the through portion 51 along the protruding portion 191 of the wiring layer 190, and A second bent portion 193 that is bent toward the center of the penetrating portion 51 is provided.

  In this way, when the protective film 16 is formed on the surface of each liquid flow path of the flow path forming substrate wafer 110, since the through portion 51 is sealed by the wiring layer 190, a reservoir is formed through the through portion 51. The protective film 16 is not formed on the surface opposite to the bonding surface of the substrate wafer 130 with the flow path forming substrate wafer 110. Therefore, the protective film 16 is not formed on the surface opposite to the bonding surface of the reservoir forming substrate wafer 130 on which the connection wiring and the like are formed with the flow path forming substrate wafer 110, and the connection of the drive circuit 200 and the like is performed. The occurrence of defects and the like can be prevented, and a process for removing the extra protective film 16 is not required, so that the manufacturing process can be simplified and the manufacturing cost can be reduced.

  Next, as shown in FIG. 8, a release layer 17 made of a high stress material is formed on the protective film 16 by, for example, a CVD method. The release layer 17 preferably has a compressive stress as an internal stress, and particularly preferably a compressive stress of 80 MPa or more. In addition, the release layer 17 is preferably made of a material that has a greater adhesive force with the protective film 16 than an adhesive force between the protective film 16 and the wiring layer 190. In this embodiment, a titanium tungsten compound (TiW) is used as the material of the release layer 17.

  When the release layer 17 made of a high-stress material and having high adhesion to the protective film 16 is formed on the surface of the protective film 16 on the flow path forming substrate wafer 110 side, the wiring layer 190 is caused by the stress of the release layer 17. The protective film 16 formed thereon begins to peel off. Then, as shown in FIG. 9A, the peeling layer 17 is removed by wet etching, so that the protective film 16 on the wiring layer 190 is completely removed together with the peeling layer 17. In the present embodiment, the wiring layer 190 is provided with the protrusion 191 and the protective film 16 is formed over the protrusion 191, so that the protective film 16 is bent toward the communication portion 13 in the vicinity of the peripheral edge of the penetrating portion 51. Since the first bent portion 192 and the second bent portion 193 bent toward the center of the penetrating portion 51 with respect to the first bent portion 192 are provided, the protective film 16 on the wiring layer 190 is removed from the release layer. When the protective film 16 is removed together with the protective film 16, it can be broken at the bent region of the protective film 16, that is, in the present embodiment, the first bent portion 192.

  That is, if an attempt is made to break a region where the protective film 16 is provided in a planar shape and is not bent, the protective film 16 is cracked or a residue protruding like a bowl is generated. The residue protruding in a bowl shape of the protective film 16 in this way is easily peeled off particularly when the ink flows in, and the clogging of the nozzle opening 21 occurs due to the peeled residue. However, as in the present invention, by breaking the protective film 16 in the bent region, it is possible to prevent the occurrence of residue or cracks protruding like a bowl, and the eyes of the nozzle opening 21 due to the residue that has peeled off. Clogging or the like can be prevented, yield can be improved, and reliability can be improved.

  Further, by breaking the protective film 16 in the bent region in this way, the fracture surface 16a is formed facing the communication portion 13 side. For this reason, even if a small residue like a bowl is generated, the residue protrudes toward the communication portion 13 side, and therefore, the protruding direction is the same direction as the direction of ink flow. The clogging of the opening 21 can be prevented more reliably.

  In the present embodiment, a part of the wiring layer 190 provided in the penetrating part 51 on the side of the communication part 13 side, that is, the adhesion layer 91 and the metal layer 92 in which the adhesion layer 91 is diffused are removed in the above-described process. Therefore, the adhesion between the wiring layer 190 and the protective film 16 is weak, and the protective film 16 can be more easily peeled from the wiring layer 190.

  In the present invention, the communication portion 13 is formed such that the opening edge on the diaphragm (elastic film 50) side is outside the opening edge of the through portion 51. The opening edge of the penetrating portion 51 on the flow path forming substrate wafer 110 side is configured only by the diaphragm (elastic film 50) or the wiring layer 190, that is, only by an oxide or metal thin film. . For example, in the present embodiment, the opening edge portion of the communication portion 13 is configured substantially only by the elastic film 50. For this reason, when the protective film 16 formed on the inner surface of the communication portion 13 or the like is peeled off together with the release layer 17, it is well separated along the opening edge of the communication portion 13, and the wiring layer 190. Only the upper protective film 16 is securely peeled and removed. Therefore, almost no so-called peeling residue is generated, and occurrence of nozzle clogging or the like due to this peeling residue can be reliably prevented.

  Further, in order to peel off the protective film 16 on the wiring layer 190 in this way, the angle between the inner surface of the penetrating part 51 (the end surface of the elastic film 50) and the surface of the diaphragm (the surface of the elastic film 50) is An acute angle of about 10 to 90 ° is preferable (see FIG. 9A). Furthermore, it is preferable that the penetration part 51 is formed in the opening shape that a corner | angular part does not exist along the peripheral part. For example, when the penetrating portion 51 is formed in a substantially rectangular opening shape, it is preferable that all four corners have an R shape. As a result, the protective film 16 on the wiring layer 190 can be further and reliably peeled off together with the peeling layer 17.

  In the present embodiment, when the protective film 16 on the wiring layer 190 is removed together with the peeling layer 17, the protective film 16 is broken at the first bent portion 192. However, the protective film 16 is peeled off. Depending on the removal conditions of the layer 17, the second bent portion 193 may be broken. Such an example is shown in FIG. As shown in FIG. 10, when removing the protective film 16 together with the release layer 17, the protective film 16 is broken at the second bent portion 193. Even if the second bent portion 193 is broken as described above, the fracture surface 16a of the protective film 16 formed on the elastic film 50 is broken toward the communication portion 13 side.

  After removing the protective film 16 on the wiring layer 190 in this way, as shown in FIG. 9B, the wiring layer 190 is removed by wet etching from the communication portion 13 side to open the through portion 51. . At this time, since the protective film 16 is not formed on the wiring layer 190, the protective film 16 does not interfere with the wet etching of the wiring layer 190.

  Therefore, the wiring layer 190 can be easily and reliably removed by wet etching to open the through portion 51. That is, according to the manufacturing method of the present invention, unlike the conventional mechanical processing, foreign matter such as processing residue does not occur. Accordingly, it is possible to reliably prevent the machining residue from remaining in the ink flow paths such as the pressure generation chamber 12 and the communication portion 13 and the occurrence of defective discharge such as nozzle clogging due to the remaining machining residue. Further, since the protective film 16 can be prevented from protruding and remaining in the shape of a bowl on the wiring layer 190 side, the wiring layer 190 can be reliably removed by etching the wiring layer 190 satisfactorily.

  Thereafter, unnecessary portions of the flow path forming substrate wafer 110 and the reservoir forming substrate wafer 130 are removed by cutting, for example, by dicing. The nozzle plate 20 having the nozzle openings 21 is bonded to the surface of the flow path forming substrate wafer 110 opposite to the reservoir forming substrate wafer 130, and the compliance substrate 40 is attached to the reservoir forming substrate wafer 130. The ink jet recording head having the above-described structure is manufactured by bonding and dividing the flow path forming substrate wafer 110 and the like into a single chip size flow path forming substrate 10 as shown in FIG.

(Embodiment 2)
11 and 12 are cross-sectional views illustrating a method for manufacturing an ink jet recording head according to Embodiment 2 of the present invention. In addition, the same code | symbol is attached | subjected to the member similar to Embodiment 1 mentioned above, and the overlapping description is abbreviate | omitted.

  In the manufacturing method of the ink jet recording head which is an example of the liquid ejecting head of the present embodiment, first, the flow path forming substrate is similar to the process shown in FIGS. 4A and 4B of the first embodiment described above. A silicon dioxide film 53 and an insulator film 55 to be the elastic film 50 are formed on the wafer 110 for use.

  Next, as shown in FIG. 11A, the penetration portion 51 is formed in the region where the communication portion 13 of the silicon dioxide film 53 to be the elastic film 50 is formed, and the penetration portion of the flow path forming substrate wafer 110. A concave portion 52 </ b> A is formed over the entire surface of the region opposite to 51.

  One recess 52 </ b> A is formed over the entire surface of the region facing the penetrating part 51, and has a side surface continuous with the side surface of the penetrating part 51. A region where the side surface of the recess 52A and the side surface on the flow path forming substrate wafer 110 side of the diaphragm (elastic film 50) are in contact with each other has a pointed portion protruding toward the penetrating portion 51, and the side surface of the recess 52A is It has an inclined surface.

  The recess 52A having such a shape is etched when the through-hole 51 is formed by reactive ion etching of the silicon dioxide film 53 and then the flow path forming substrate wafer 110 is subjected to reactive ion etching by changing the gas. It can be formed by changing conditions (for example, output).

  Next, the piezoelectric element 300 is formed by performing the steps shown in FIGS. 5A and 5B of the first embodiment.

  Next, as shown in FIG. 11B, lead electrodes 90 (not shown) and a wiring layer 190 are formed. At this time, the protruding portion 191A is formed by forming the wiring layer 190 along the inner surface of the recess 52A.

  Next, the steps shown in FIGS. 6A to 6C of the first embodiment described above are performed to join the reservoir forming substrate wafer 130 to the flow path forming substrate wafer 110, and at the same time, the flow path forming substrate wafer. A mask film 54 is formed after the thickness of 110 is set to a predetermined thickness, and the flow path forming substrate wafer 110 is anisotropically etched (wet etching) through the mask film 54 (not shown) as shown in FIG. ) As a result, a liquid flow path including the pressure generation chamber 12, the communication portion 13, the ink supply path 14, and the communication path 15 is formed. At this time, since the penetrating portion 51 is sealed by the wiring layer 190, the etching liquid is prevented from entering the reservoir forming substrate wafer 130 side (not shown) and etching the reservoir forming substrate wafer 130. be able to.

  Further, when the liquid flow path such as the pressure generating chamber 12 is formed on the flow path forming substrate wafer 110 in this way, the protruding portion 191A protruding to the communication portion 13 side of the wiring layer 190 is connected to the communication portion 13 via the through portion 51. Exposed to the side.

  Next, as shown in FIG. 11D, a part of the wiring layer 190 in the through-hole 51 is removed by wet etching (light etching) from the communication portion 13 side. That is, the adhesion layer 91 exposed to the communication portion 13 side of the protrusion 191A and a part of the metal layer 92 where the adhesion layer 91 is diffused are removed by etching.

  Next, the mask film 54 on the surface of the flow path forming substrate wafer 110 is removed, and the protective film 16 made of tantalum pentoxide is formed as shown in FIG. At this time, since the protruding portion 191 </ b> A of the wiring layer 190 is exposed in the communication portion 13, the protective film 16 protrudes from the one surface of the elastic film 50 on the pressure generation chamber 12 side. It is provided continuously over the portion 191A. Thus, the protective film 16 formed on the elastic film 50 includes a first bent portion 192A bent toward the communicating portion 13 side on the peripheral edge side of the through portion 51 along the protruding portion 191A of the wiring layer 190, and A second bent portion 193 </ b> A that is bent toward the center of the penetrating portion 51 is provided. That is, since the protective film 16 is formed along the protruding portion 191A formed along the recess 52A, the first bent portion 192A has an acute angle from the region on the elastic film 50 toward the flow path forming substrate wafer 110 side. The second bent portion 193A is also bent at an acute angle toward the center of the penetrating portion 51.

  Next, as in FIG. 8 of the first embodiment described above, a release layer 17 made of a high-stress material is formed on the protective film 16 by, for example, a CVD method, and as shown in FIG. By removing 17 by wet etching, the protective film 16 on the wiring layer 190 is completely removed together with the peeling layer 17. At this time, the protective film 16 includes a first bent portion 192A bent toward the communicating portion 13 in the vicinity of the peripheral portion of the penetrating portion 51, and a first bent portion 192A bent toward the center of the penetrating portion 51 from the first bent portion 192A. Since the two bent portions 193A are provided, the protective film 16 on the wiring layer 190 can be broken at the bent region of the protective film 16, that is, the first bent portion 192A in this embodiment. The first bent portion 192A is bent at an acute angle from the region on the elastic film 50 toward the flow path forming substrate wafer 110, so that the first bent portion 192A can be easily broken. Can do.

  Thereby, it is possible to prevent the protective film 16 from remaining in a bowl shape on the penetrating portion 51 side, and to prevent clogging of the nozzle opening 21 and the like by peeling off the residue when the ink flows in. Further, by breaking the protective film 16 in the bent region, the fracture surface 16a is formed facing the communication portion 13 side. For this reason, even if a small residue like a ridge is generated, the residue protrudes toward the communicating portion 13 side, and thus it is difficult to peel off when the ink flows in, and the nozzle opening 21 can be more reliably prevented from being clogged. it can.

  After that, similarly to FIG. 9B of the first embodiment described above, the wiring layer 190 is removed by wet etching from the communication portion 13 side to open the through portion 51.

  In the present embodiment, when the protective film 16 on the wiring layer 190 is removed together with the release layer 17, the protective film 16 is broken at the first bent portion 192A. Similarly, the protective film 16 may be broken at the second bent portion 193A depending on the removal condition of the release layer 17 or the like. Also in this case, since the second bent portion 193A is formed at an acute angle, the protective film 16 can be easily broken at the second bent portion 193A.

(Embodiment 3)
13 and 14 are cross-sectional views illustrating a method for manufacturing an ink jet recording head according to Embodiment 3 of the present invention. In addition, the same code | symbol is attached | subjected to the member similar to Embodiment 1 mentioned above, and the overlapping description is abbreviate | omitted.

  In the manufacturing method of the ink jet recording head which is an example of the liquid ejecting head of the present embodiment, first, the flow path forming substrate is similar to the process shown in FIGS. 4A and 4B of the first embodiment described above. A silicon dioxide film 53 and an insulator film 55 to be the elastic film 50 are formed on the wafer 110 for use.

  Next, as shown in FIG. 13A, the penetration part 51 is formed in the region where the communication part 13 of the silicon dioxide film 53 to be the elastic film 50 is formed, and the penetration part of the flow path forming substrate wafer 110. A recess 52 </ b> B is formed over the entire surface of the region opposite to 51. The recess 52B is formed over the entire surface of the region facing the penetrating portion 51, and has a first recess 150 having a side surface continuous with the side surface of the penetrating portion 51, and a bottom corner portion of the first recess 150. The second recess 151 is formed deeper than the first recess 150.

  The first recess 150 is formed with an inclined inclined surface so that the angle between the side surface and the surface of the vibration plate (elastic film 50) on the flow path forming substrate wafer 110 side is an obtuse angle. Yes. The second recess 151 is formed so that its cross-sectional shape is V-shaped.

  In this embodiment, the concave portion 52B having such a shape can be formed simultaneously with the penetrating portion 51 by ion milling the elastic film 50 and the flow path forming substrate wafer 110. That is, when the elastic film 50 is ion milled, the recess 52B can be formed by removing the surface of the flow path forming substrate wafer 110 so as to be over-etched. Of course, the formation method of the penetration part 51 and the recessed part 52B is not specifically limited to this, It can form also combining other dry etching, wet etching, etc. similarly to Embodiment 1 mentioned above.

  Next, the piezoelectric element 300 is formed by performing the steps shown in FIGS. 5A and 5B of the first embodiment.

  Next, as shown in FIG. 13B, lead electrodes 90 (not shown) and a wiring layer 190 are formed. At this time, the protruding portion 191B is formed by forming the wiring layer 190 along the inner surface of the recess 52B.

  Next, the steps shown in FIGS. 6A to 6C of the first embodiment described above are performed to join the reservoir forming substrate wafer 130 to the flow path forming substrate wafer 110, and at the same time, the flow path forming substrate wafer. 110 is formed to a predetermined thickness and the mask film 54 is formed. Then, as shown in FIG. 13C, the flow path forming substrate wafer 110 is anisotropically etched (wet etching) through the mask film 54 (not shown). ) As a result, a liquid flow path including the pressure generation chamber 12, the communication portion 13, the ink supply path 14, and the communication path 15 is formed. At this time, since the penetrating portion 51 is sealed by the wiring layer 190, the etching liquid is prevented from entering the reservoir forming substrate wafer 130 side (not shown) and etching the reservoir forming substrate wafer 130. be able to.

  Further, when the liquid flow path such as the pressure generation chamber 12 is formed on the flow path forming substrate wafer 110 in this way, the protruding portion 191B protruding to the communication portion 13 side of the wiring layer 190 is connected to the communication portion 13 via the through portion 51. Exposed to the side.

  Next, as shown in FIG. 13D, a part of the wiring layer 190 in the penetrating portion 51 is removed by wet etching (light etching) from the communicating portion 13 side. That is, the adhesion layer 91 exposed to the communicating portion 13 side of the protruding portion 191B and a part of the metal layer 92 where the adhesion layer 91 is diffused are removed by etching.

  Next, the mask film 54 on the surface of the flow path forming substrate wafer 110 is removed, and a protective film 16 made of tantalum pentoxide is formed as shown in FIG. At this time, since the protruding portion 191B of the wiring layer 190 is exposed at the communication portion 13, the protective film 16 protrudes from the one surface of the elastic film 50 on the pressure generating chamber 12 side. It is provided continuously over the portion 191B. Thereby, the protective film 16 formed on the elastic film 50 includes a first bent portion 192B bent toward the communicating portion 13 side on the peripheral edge side of the through portion 51 along the protruding portion 191B of the wiring layer 190, and A second bent portion 193 </ b> B that is bent toward the center of the penetrating portion 51 is provided.

  Next, as in FIG. 8 of the first embodiment described above, a release layer 17 made of a high-stress material is formed on the protective film 16 by, for example, a CVD method, and as shown in FIG. By removing 17 by wet etching, the protective film 16 on the wiring layer 190 is completely removed together with the peeling layer 17. At this time, the protective film 16 is provided with a first bent portion 192B bent toward the communicating portion 13 in the vicinity of the peripheral portion of the through portion 51 and a second bent portion 193B bent toward the center side of the through portion 51. Therefore, the protective film 16 on the wiring layer 190 can be broken at the bent region of the protective film 16, that is, the first bent portion 192B in this embodiment.

  Thereby, it is possible to prevent the protective film 16 from remaining in a bowl shape on the penetrating portion 51 side, and to prevent clogging of the nozzle opening 21 and the like by peeling off the residue when the ink flows in. Further, by breaking the protective film 16 in the bent region, the fracture surface 16a is formed facing the communication portion 13 side. For this reason, even if a small residue like a ridge is generated, the residue protrudes toward the communicating portion 13 side, and thus it is difficult to peel off when the ink flows in, and the nozzle opening 21 can be more reliably prevented from being clogged. it can.

  After that, similarly to FIG. 9B of the first embodiment described above, the wiring layer 190 is removed by wet etching from the communication portion 13 side to open the through portion 51.

  In the present embodiment, when the protective film 16 on the wiring layer 190 is removed together with the release layer 17, the protective film 16 is broken at the first bent portion 192B. Similarly, the protective film 16 may be broken at the second bent portion 193B depending on the removal condition of the release layer 17 or the like. Also in this case, the same effect can be obtained.

(Embodiment 4)
15 and 16 are cross-sectional views illustrating a method for manufacturing an ink jet recording head according to Embodiment 4 of the present invention. In addition, the same code | symbol is attached | subjected to the member similar to Embodiment 1 mentioned above, and the overlapping description is abbreviate | omitted.

  In the manufacturing method of the ink jet recording head which is an example of the liquid ejecting head of the present embodiment, first, the flow path forming substrate is similar to the process shown in FIGS. 4A and 4B of the first embodiment described above. A silicon dioxide film 53 and an insulator film 55 to be the elastic film 50 are formed on the wafer 110 for use.

  Next, as shown in FIG. 15A, the penetration portion 51 is formed in the region where the communication portion 13 of the silicon dioxide film 53 to be the elastic film 50 is formed, and the penetration portion of the flow path forming substrate wafer 110. A recess 52 </ b> C having a larger opening than the penetrating part 51 is formed in a region including a region opposite to 51. That is, the side surface of the recess 52 </ b> C is not formed continuously with the inner surface of the through portion 51. The angle between the side surface of the recess 52C and the surface of the diaphragm (elastic film 50) on the flow path forming substrate wafer 110 side is formed to be an acute angle, and the side surface of the recess 52C has an inclined inclined surface. It has become.

  In this embodiment, the recess 52C having such a shape is formed in the flow path forming substrate wafer using the elastic film 50 having the through part 51 as a mask after the through part 51 is formed by reactive ion etching of the elastic film 50. 110 can be formed by wet etching.

  Next, the piezoelectric element 300 is formed by performing the steps shown in FIGS. 5A and 5B of the first embodiment.

  Next, as shown in FIG. 15B, lead electrodes 90 (not shown) and a wiring layer 190 are formed. At this time, the projecting portion 191C is formed by forming the wiring layer 190 along the inner surface of the recess 52C.

  Next, the steps shown in FIGS. 6A to 6C of the first embodiment described above are performed to join the reservoir forming substrate wafer 130 to the flow path forming substrate wafer 110, and at the same time, the flow path forming substrate wafer. 110 is formed to a predetermined thickness, and the mask film 54 is formed. Then, as shown in FIG. 15C, the flow path forming substrate wafer 110 is anisotropically etched (wet etching) through the mask film 54 (not shown). ) As a result, a liquid flow path including the pressure generation chamber 12, the communication portion 13, the ink supply path 14, and the communication path 15 is formed. At this time, since the penetrating portion 51 is sealed by the wiring layer 190, the etching liquid is prevented from entering the reservoir forming substrate wafer 130 side (not shown) and etching the reservoir forming substrate wafer 130. be able to.

  Further, when the liquid flow path such as the pressure generating chamber 12 is formed on the flow path forming substrate wafer 110 in this way, the protruding portion 191 </ b> C protruding to the communication portion 13 side of the wiring layer 190 is connected to the communication portion 13 via the through portion 51. Exposed to the side.

  Next, as shown in FIG. 15D, a part of the wiring layer 190 in the through portion 51 is removed by wet etching (light etching) from the communication portion 13 side. That is, the adhesion layer 91 exposed to the communication portion 13 side of the protruding portion 191C and a part of the metal layer 92 where the adhesion layer 91 is diffused are removed by etching.

  Next, the mask film 54 on the surface of the flow path forming substrate wafer 110 is removed, and the protective film 16 made of tantalum pentoxide is formed as shown in FIG. At this time, since the protruding portion 191 </ b> C of the wiring layer 190 is exposed in the communication portion 13, the protective film 16 protrudes from the one surface of the elastic film 50 on the pressure generation chamber 12 side. It is provided continuously over the portion 191C. Thereby, the protective film 16 formed on the elastic film 50 includes a first bent portion 192C bent toward the communicating portion 13 side on the peripheral edge side of the through portion 51 along the protruding portion 191C of the wiring layer 190, and A second bent portion 193 </ b> C that is bent toward the center of the penetrating portion 51 is provided.

  Next, as in FIG. 8 of the first embodiment described above, a release layer 17 made of a high-stress material is formed on the protective film 16 by, for example, a CVD method, and as shown in FIG. By removing 17 by wet etching, the protective film 16 on the wiring layer 190 is completely removed together with the peeling layer 17. At this time, the protective film 16 includes a first bent portion 192C bent toward the communication portion 13 in the vicinity of the peripheral portion of the through portion 51, and a first bent portion 192C bent toward the center side of the through portion 51 rather than the first bent portion 192C. Since the two bent portions 193C are provided, the protective film 16 on the wiring layer 190 can be broken at the bent region of the protective film 16, that is, the first bent portion 192C in this embodiment.

  Thereby, it is possible to prevent the protective film 16 from remaining in a bowl shape on the penetrating portion 51 side, and to prevent clogging of the nozzle opening 21 and the like by peeling off the residue when the ink flows in. Further, by breaking the protective film 16 in the bent region, the fracture surface 16a is formed facing the communication portion 13 side. For this reason, even if a small residue like a ridge is generated, the residue protrudes toward the communicating portion 13 side, and thus it is difficult to peel off when the ink flows in, and the nozzle opening 21 can be more reliably prevented from being clogged. it can.

  After that, similarly to FIG. 9B of the first embodiment described above, the wiring layer 190 is removed by wet etching from the communication portion 13 side to open the through portion 51.

  In the present embodiment, when the protective film 16 on the wiring layer 190 is removed together with the release layer 17, the protective film 16 is broken at the first bent portion 192C. Similarly, the protective film 16 may be broken at the second bent portion 193C depending on the removal condition of the release layer 17 or the like. Also in this case, the same effect can be obtained.

(Embodiment 5)
17 and 18 are cross-sectional views showing a method for manufacturing an ink jet recording head according to Embodiment 5 of the present invention. In addition, the same code | symbol is attached | subjected to the member similar to Embodiment 1 mentioned above, and the overlapping description is abbreviate | omitted.

  In the manufacturing method of the ink jet recording head which is an example of the liquid ejecting head of the present embodiment, first, the flow path forming substrate is similar to the process shown in FIGS. 4A and 4B of the first embodiment described above. A silicon dioxide film 53 and an insulator film 55 to be the elastic film 50 are formed on the wafer 110 for use.

  Next, as shown in FIG. 17A, the penetration part 51 is formed in the region where the communication part 13 of the silicon dioxide film 53 to be the elastic film 50 is formed, and the penetration part of the flow path forming substrate wafer 110. A recess 52D having a V-shaped cross section is formed in the vicinity of the peripheral edge of 51. In the present embodiment, the recess 52D is formed on the inner side of the penetrating part 51 in the circumferential direction.

  In this embodiment, the concave portion 52D having such a shape is formed by forming the through-hole 51 by reactive ion etching of the elastic film 50, and then wet-etching the flow path forming substrate wafer 110 via a predetermined mask. It can be formed by dry etching.

  Next, the piezoelectric element 300 is formed by performing the steps shown in FIGS. 5A and 5B of the first embodiment.

  Next, as shown in FIG. 17B, lead electrodes 90 (not shown) and a wiring layer 190 are formed. At this time, the wiring layer 190 is formed on the elastic film 50 and on the surface exposed by the through portion 51 of the flow path forming substrate wafer 110 along the inner surface of the recess 52D, thereby forming the protruding portion 191D.

  Next, the steps shown in FIGS. 6A to 6C of the first embodiment described above are performed to join the reservoir forming substrate wafer 130 to the flow path forming substrate wafer 110, and at the same time, the flow path forming substrate wafer. 110 is formed to a predetermined thickness, and the mask film 54 is formed. Then, as shown in FIG. 15C, the flow path forming substrate wafer 110 is anisotropically etched (wet etching) through the mask film 54 (not shown). ) As a result, a liquid flow path including the pressure generation chamber 12, the communication portion 13, the ink supply path 14, and the communication path 15 is formed. At this time, since the penetrating portion 51 is sealed by the wiring layer 190, the etching liquid is prevented from entering the reservoir forming substrate wafer 130 side (not shown) and etching the reservoir forming substrate wafer 130. be able to.

  Further, when the liquid flow path such as the pressure generating chamber 12 is formed on the flow path forming substrate wafer 110 in this way, the protruding portion 191D protruding to the communication portion 13 side of the wiring layer 190 is connected to the communication portion 13 via the through portion 51. Exposed to the side.

  Next, as shown in FIG. 17D, a part of the wiring layer 190 in the penetrating part 51 is removed by wet etching (light etching) from the communicating part 13 side. That is, the adhesion layer 91 exposed to the communication part 13 side of the protrusion 191D and a part of the metal layer 92 where the adhesion layer 91 is diffused are removed by etching.

  Next, the mask film 54 on the surface of the flow path forming substrate wafer 110 is removed, and the protective film 16 made of tantalum pentoxide is formed as shown in FIG. At this time, since the protruding portion 191 </ b> D of the wiring layer 190 is exposed at the communication portion 13, the protective film 16 protrudes from the one surface of the elastic film 50 on the pressure generation chamber 12 side. It is provided continuously over the portion 191D. Thereby, the protective film 16 formed on the elastic film 50 includes a first bent portion 192D bent toward the communicating portion 13 side on the peripheral edge side of the through portion 51 along the protruding portion 191D of the wiring layer 190, and A second bent portion 193D that is bent toward the center of the penetrating portion 51 is provided.

  Next, as in FIG. 8 of the first embodiment described above, a release layer 17 made of a high-stress material is formed on the protective film 16 by, for example, the CVD method, and as shown in FIG. By removing 17 by wet etching, the protective film 16 on the wiring layer 190 is completely removed together with the peeling layer 17. At this time, the protective film 16 is provided with a first bent portion 192D that is bent toward the communication portion 13 in the vicinity of the peripheral portion of the through portion 51, and a second bent portion 193C that is bent toward the center of the through portion 51. Therefore, the protective film 16 on the wiring layer 190 can be broken at the bent region of the protective film 16, that is, the first bent portion 192D in this embodiment.

  Thereby, it is possible to prevent the protective film 16 from remaining in a bowl shape on the penetrating portion 51 side, and to prevent clogging of the nozzle opening 21 and the like by peeling off the residue when the ink flows in. Further, by breaking the protective film 16 in the bent region, the fracture surface 16a is formed facing the communication portion 13 side. For this reason, even if a small residue like a ridge is generated, the residue protrudes toward the communicating portion 13 side, and thus it is difficult to peel off when the ink flows in, and the nozzle opening 21 can be more reliably prevented from being clogged. it can.

  After that, similarly to FIG. 9B of the first embodiment described above, the wiring layer 190 is removed by wet etching from the communication portion 13 side to open the through portion 51.

  In the present embodiment, when the protective film 16 on the wiring layer 190 is removed together with the release layer 17, the protective film 16 is broken at the first bent portion 192 </ b> D. Similarly, the protective film 16 may be broken at the second bent portion 193D depending on the removal condition of the release layer 17 or the like. Also in this case, the same effect can be obtained.

(Embodiment 6)
19 to 21 are cross-sectional views illustrating a method for manufacturing an ink jet recording head according to Embodiment 6 of the present invention. In addition, the same code | symbol is attached | subjected to the member similar to Embodiment 1 mentioned above, and the overlapping description is abbreviate | omitted.

In the manufacturing method of the ink jet recording head which is an example of the liquid ejecting head of the present embodiment, first, as shown in FIG. 19A, in the region where the penetrating portion 51 of the flow path forming substrate wafer 110 is formed, For example, a silicon nitride film 57 made of silicon nitride (Si _x N _y ) is formed. In this embodiment, after forming silicon nitride over the entire surface of the flow path forming substrate wafer 110, the silicon nitride film 57 is formed by patterning into a predetermined shape. The method for forming the silicon nitride film 57 is not particularly limited to this. For example, a mask that opens to a desired region is provided on the surface of the flow path forming substrate wafer 110, and only the region exposed by the opening of this mask is provided. May be thermally nitrided.

  Next, as shown in FIG. 19B, the flow path forming substrate wafer 110 is thermally oxidized in a diffusion furnace at about 1100 ° C., and silicon dioxide constituting an elastic film 50 on the surface of the flow path forming substrate wafer 110. A film 53 is formed. At this time, since a part of the surface of the flow path forming substrate wafer 110 is covered with the silicon nitride film 57, the elastic film 50 is formed in a region other than the silicon nitride film 57. The elastic film 50 thus formed has a circular cross section at the end face on the penetrating part 51 side, and the surface of the flow path forming substrate wafer 110 is between the thickness direction of the elastic film 50 (the penetrating part). 51 in the depth direction). That is, the penetration part 51 is formed in a state in which the inner surface is exposed partway in the depth direction on the opening side. Such a method of forming the elastic film 50 is generally called LOCOS (Local Oxidation of Silicon).

  Thereafter, as shown in FIG. 19C, the silicon nitride film 57 is removed to form the penetrating portion 51, and the recess 52E is formed in the vicinity of the peripheral portion of the penetrating portion 51 of the flow path forming substrate wafer 110. . In the present embodiment, the recess 52E is formed on the inner side of the through portion 51 in the circumferential direction.

  Next, although not shown in the drawings, an insulating film 55 is formed on the silicon dioxide film 53 of the flow path forming substrate wafer 110 and patterned to form an opening 56 larger than the penetrating portion 51.

  Next, the piezoelectric element 300 is formed by performing the steps shown in FIGS. 5A and 5B of the first embodiment.

  Next, as shown in FIG. 20A, a lead electrode 90 (not shown) and a wiring layer 190 are formed. At this time, the wiring layer 190 is formed on the elastic film 50 and on the surface exposed by the through portion 51 of the flow path forming substrate wafer 110 along the inner surface of the recess 52E, thereby forming the protruding portion 191E.

  Next, the steps shown in FIGS. 6A to 6C of the first embodiment described above are performed to join the reservoir forming substrate wafer 130 to the flow path forming substrate wafer 110, and at the same time, the flow path forming substrate wafer. After forming the mask film 110 to a predetermined thickness and forming the mask film 54, as shown in FIG. 20B, the flow path forming substrate wafer 110 is anisotropically etched (wet etching) through the mask film 54 (not shown). ) As a result, a liquid flow path including the pressure generation chamber 12, the communication portion 13, the ink supply path 14, and the communication path 15 is formed. At this time, since the penetrating portion 51 is sealed by the wiring layer 190, the etching liquid is prevented from entering the reservoir forming substrate wafer 130 side (not shown) and etching the reservoir forming substrate wafer 130. be able to.

  Further, when the liquid flow path such as the pressure generating chamber 12 is formed on the flow path forming substrate wafer 110 in this way, the protruding portion 191E protruding to the communication portion 13 side of the wiring layer 190 is connected to the communication portion 13 via the through portion 51. Exposed to the side.

  Next, as shown in FIG. 20C, a part of the wiring layer 190 in the penetrating part 51 is removed by wet etching (light etching) from the communicating part 13 side. That is, the adhesion layer 91 exposed on the side of the communication portion 13 including the protruding portion 191E and a part of the metal layer 92 where the adhesion layer 91 is diffused are removed by etching.

  Next, the mask film 54 on the surface of the flow path forming substrate wafer 110 is removed, and the protective film 16 made of tantalum pentoxide is formed as shown in FIG. At this time, since the protruding portion 191E of the wiring layer 190 is exposed at the communication portion 13, the protective film 16 protrudes from the one surface of the elastic film 50 on the pressure generating chamber 12 side. It is provided continuously over the portion 191E. Thereby, the protective film 16 formed on the elastic film 50 includes a first bent portion 192E bent toward the communicating portion 13 side on the peripheral edge side of the through portion 51 along the protruding portion 191E of the wiring layer 190, and A second bent portion 193E bent at the center side of the penetrating portion 51 is provided.

  In the present embodiment, the end surface of the elastic film 50 on the side of the penetrating part 51 is provided so that the cross section is circular, so that the contact of the protective film 16 to the opening edge of the penetrating part 51 is improved. In detail, the protective film 16 can be satisfactorily broken in a process described later.

  Next, as in FIG. 8 of the first embodiment described above, a release layer 17 made of a high-stress material is formed on the protective film 16 by, for example, the CVD method, and as shown in FIG. By removing 17 by wet etching, the protective film 16 on the wiring layer 190 is completely removed together with the peeling layer 17. At this time, the protective film 16 includes a first bent portion 192E that is bent toward the communicating portion 13 in the vicinity of the peripheral portion of the penetrating portion 51, and a first bent portion 192E that is bent closer to the center of the penetrating portion 51 than the first bent portion 192E. Since the second bent portion 193E is provided, the protective film 16 on the wiring layer 190 can be broken at the bent region of the protective film 16, that is, the first bent portion 192E in this embodiment.

  Thereby, it is possible to prevent the protective film 16 from remaining in a bowl shape on the penetrating portion 51 side, and to prevent clogging of the nozzle opening 21 and the like by peeling off the residue when the ink flows in. Further, by breaking the protective film 16 in the bent region, the fracture surface 16a is formed facing the communication portion 13 side. For this reason, even if a small residue like a ridge is generated, the residue protrudes toward the communicating portion 13 side, and thus it is difficult to peel off when the ink flows in, and the nozzle opening 21 can be more reliably prevented from being clogged. it can.

  After that, similarly to FIG. 9B of the first embodiment described above, the wiring layer 190 is removed by wet etching from the communication portion 13 side to open the through portion 51.

  In the present embodiment, when the protective film 16 on the wiring layer 190 is removed together with the peeling layer 17, the protective film 16 is broken at the first bent portion 192E. Similarly, the protective film 16 may be broken at the second bent portion 193E depending on the removal condition of the release layer 17 or the like. Also in this case, the same effect can be obtained.

(Other embodiments)
As mentioned above, although Embodiment 1-6 of this invention was demonstrated, the basic composition of this invention is not limited to each embodiment mentioned above. For example, in Embodiments 1 to 6 described above, the wiring layer 190 including the adhesion layer 91 and the metal layer 92 has been illustrated. However, the configuration of the wiring layer 190 is not limited to this, and for example, the wiring layer may be only a metal layer. You may make it comprise by. In the first to sixth embodiments described above, the protective film 16 on the wiring layer 190 formed in the through portion 51 is removed by the release layer 17 of the high-stress material, but the protective film 16 on the wiring layer 190 is removed. The removing method is not particularly limited, and the present invention can be applied as long as the protective film 16 on the wiring layer 190 is peeled off by stress.

  Furthermore, the ink jet recording heads of Embodiments 1 to 6 described above constitute a part of a recording head unit including an ink flow path communicating with an ink cartridge and the like, and are mounted on the ink jet recording apparatus. FIG. 22 is a schematic view showing an example of the ink jet recording apparatus.

  As shown in FIG. 22, in the recording head units 1A and 1B having the ink jet recording head, cartridges 2A and 2B constituting the ink supply means are detachably provided, and the carriage 3 on which the recording head units 1A and 1B are mounted. Is provided on a carriage shaft 5 attached to the apparatus body 4 so as to be movable in the axial direction. The recording head units 1A and 1B, for example, are configured to eject a black ink composition and a color ink composition, respectively.

  The driving force of the driving motor 6 is transmitted to the carriage 3 via a plurality of gears and timing belt 7 (not shown), so that the carriage 3 on which the recording head units 1A and 1B are mounted is moved along the carriage shaft 5. The On the other hand, the apparatus body 4 is provided with a platen 8 along the carriage shaft 5, and a recording sheet S which is a recording medium such as paper fed by a paper feed roller (not shown) is wound around the platen 8. It is designed to be transported.

  In the above-described embodiments, the ink jet recording head has been described as an example of the liquid ejecting head. However, the present invention broadly applies to all liquid ejecting heads and ejects liquids other than ink. Of course, the present invention can also be applied to a method of manufacturing a liquid jet head. Other liquid ejecting heads include, for example, various recording heads used in image recording apparatuses such as printers, color material ejecting heads used in the manufacture of color filters such as liquid crystal displays, organic EL displays, and FEDs (field emission displays). Examples thereof include an electrode material ejection head used for electrode formation, a bioorganic matter ejection head used for biochip production, and the like.

FIG. 3 is an exploded perspective view of the recording head according to the first embodiment. 2A and 2B are a plan view and a cross-sectional view of the recording head according to the first embodiment. FIG. 3 is an enlarged cross-sectional view of a main part of the recording head according to the first embodiment. 5 is a cross-sectional view illustrating a manufacturing process of the recording head according to Embodiment 1. FIG. 5 is a cross-sectional view illustrating a manufacturing process of the recording head according to Embodiment 1. FIG. 5 is a cross-sectional view illustrating a manufacturing process of the recording head according to Embodiment 1. FIG. 5 is a cross-sectional view illustrating a manufacturing process of the recording head according to Embodiment 1. FIG. 5 is a cross-sectional view illustrating a manufacturing process of the recording head according to Embodiment 1. FIG. FIG. 5 is an enlarged cross-sectional view illustrating a manufacturing process of the recording head according to the first embodiment. FIG. 5 is an enlarged cross-sectional view illustrating a manufacturing process of the recording head according to the first embodiment. 6 is an enlarged cross-sectional view illustrating a manufacturing process of a recording head according to Embodiment 2. FIG. 6 is an enlarged cross-sectional view illustrating a manufacturing process of a recording head according to Embodiment 2. FIG. 6 is an enlarged cross-sectional view illustrating a manufacturing process of a recording head according to Embodiment 3. FIG. 6 is an enlarged cross-sectional view illustrating a manufacturing process of a recording head according to Embodiment 3. FIG. FIG. 10 is an enlarged cross-sectional view illustrating a manufacturing process of a recording head according to a fourth embodiment. FIG. 10 is an enlarged cross-sectional view illustrating a manufacturing process of a recording head according to a fourth embodiment. FIG. 10 is an enlarged cross-sectional view illustrating a manufacturing process of a recording head according to a fifth embodiment. FIG. 10 is an enlarged cross-sectional view illustrating a manufacturing process of a recording head according to a fifth embodiment. FIG. 10 is an enlarged cross-sectional view illustrating a manufacturing process of a recording head according to a sixth embodiment. FIG. 10 is an enlarged cross-sectional view illustrating a manufacturing process of a recording head according to a sixth embodiment. FIG. 10 is an enlarged cross-sectional view illustrating a manufacturing process of a recording head according to a sixth embodiment. 1 is a schematic diagram illustrating an example of an ink jet recording apparatus according to an embodiment.

Explanation of symbols

  10 flow path forming substrate, 12 pressure generating chamber, 16 protective film, 16a fracture surface, 20 nozzle plate, 21 nozzle opening, 30 reservoir forming substrate, 31 reservoir portion, 32 piezoelectric element holding portion, 35 adhesive, 40 compliance substrate, 50 elastic film, 51 penetrating portion, 60 lower electrode film, 70 piezoelectric layer, 80 upper electrode film, 90 lead electrode, 91 adhesion layer, 92 metal layer, 100 reservoir, 110 wafer for channel formation substrate, 130 reservoir formation substrate Wafer, 190 wiring layer, 191, 191A to 191E protruding portion, 192, 192A to 192E first bent portion, 193, 193A to 193E second bent portion, 200 drive circuit, 210 drive wiring, 300 piezoelectric element

Claims (23)

Forming a flow path provided with a pressure generating chamber that communicates with a nozzle opening for ejecting liquid and a communication portion that communicates with a plurality of pressure generating chambers and forms a part of a reservoir serving as a common liquid chamber for the pressure generating chambers A vibration plate is formed on one side of the substrate, and a piezoelectric element including a lower electrode, a piezoelectric layer, and an upper electrode is formed on the vibration plate, and a through-hole opening in a region facing the communication portion of the vibration plate Forming a recess and forming a recess at least in the vicinity of the peripheral edge of the through portion in a region facing the through portion of the flow path forming substrate;
Forming a separation layer that seals the penetrating portion on the one surface side of the flow path forming substrate across the inner surface of the concave portion, and forming a protruding portion protruding toward the region where the communicating portion is formed; ,
Bonding a reservoir forming substrate formed with a reservoir portion composing a part of the reservoir in communication with the communicating portion to the one surface side of the flow path forming substrate;
The pressure generating chamber and the communication portion are formed by wet etching the flow path forming substrate from the other surface side until the diaphragm and the isolation layer are exposed, and the isolation layer is exposed to expose the communication portion side. Exposing the protruding portion protruding to the surface;
A protective film made of a material having liquid resistance is formed on the protruding portion on the pressure generation chamber of the flow path forming substrate, the inner surface of the communication portion, and the surface of the isolation layer on the communication portion side. Process,
Peeling and removing the protective film on the isolation layer;
And a step of forming the reservoir by making the reservoir and the communication portion communicate with each other by removing the isolation layer. In the step of forming the protective film, the protective film is formed on the isolation layer having the protruding portion, so that the protective film is bent from the diaphragm to the communication portion side in the vicinity of the peripheral edge of the through portion. Forming the first bent portion and the second bent portion bent closer to the center of the penetrating portion than the first bent portion, and peeling and removing the protective film on the isolation layer 2. The method of manufacturing a liquid jet head according to claim 1, wherein in the step, the protective film is broken at the first bent portion or the second bent portion. In the step of forming the isolation layer, a lead electrode drawn out from the piezoelectric element is formed on the one surface side of the flow path forming substrate, and the lead electrode is made of the same layer as the lead electrode but is discontinuous with the lead electrode. The method of manufacturing a liquid jet head according to claim 1, further comprising a step of forming the isolation layer including the wiring layer. 4. The step of forming the concave portion includes forming the concave portion having a V-shaped cross section in the circumferential direction in the vicinity of the peripheral edge portion of the through portion of the flow path forming substrate. A method for manufacturing the liquid jet head according to claim 1. In the step of forming the concave portion, the first concave portion and the region corresponding to the bottom corner portion of the first concave portion are formed over the entire surface of the region facing the through portion of the flow path forming substrate. The method of manufacturing a liquid jet head according to claim 1, wherein the concave portion including a second concave portion deeper than the concave portion is formed. The liquid ejecting head according to claim 1, wherein in the step of forming the concave portion, the concave portion is formed across a region facing the through portion of the flow path forming substrate. Production method. 7. The liquid according to claim 6, wherein in the step of forming the recess, the recess is formed so as to include a region facing the through portion of the flow path forming substrate and to have an opening larger than the through portion. Manufacturing method of ejection head. 8. The step of forming the concave portion includes forming the concave portion so that an angle between a side surface of the concave portion and a surface of the diaphragm on the flow path forming substrate side becomes an obtuse angle. Manufacturing method of the liquid jet head of the present invention. In the step of forming the diaphragm, the end surface on the penetrating portion side is formed to have a circular cross section, and one surface of the region facing the communicating portion of the flow path forming substrate is the vibration The method of manufacturing a liquid jet head according to claim 1, wherein the liquid jet head is formed so as to be between a depth direction of the through portion of the plate. The flow path forming substrate is made of a silicon single crystal substrate, and in the step of forming the diaphragm, a silicon nitride film is formed in a region where the through portion of the flow path forming substrate is provided, and the flow path forming substrate is The method of manufacturing a liquid jet head according to claim 9, wherein the diaphragm made of silicon oxide is formed by thermal oxidation. In the step of forming the concave portion, before forming the piezoelectric element, the concave portion is formed by wet etching the flow path forming substrate using the diaphragm having the through portion as a mask. A method for manufacturing a liquid jet head according to claim 1. The method of manufacturing a liquid jet head according to claim 1, wherein the step of forming the recess is performed by dry etching the flow path forming substrate. The method of manufacturing a liquid jet head according to claim 12, wherein the dry etching is ion milling or reactive ion etching. The method of manufacturing a liquid jet head according to claim 1, wherein an oxide or a nitride is used as a material for the protective film. The method of manufacturing a liquid jet head according to claim 14, wherein tantalum oxide is used as a material for the protective film. In the step of peeling off the protective film, after forming a peeling layer whose internal stress is compressive stress on the protective film, the peeling layer is peeled off to peel off the protective film on the isolation layer together with the peeling layer. The method of manufacturing a liquid jet head according to claim 1, wherein: 17. The method of manufacturing a liquid jet head according to claim 16, wherein an adhesion force between the peeling layer and the protective film is larger than an adhesion force between the protective film and the isolation layer. 18. The method of manufacturing a liquid jet head according to claim 16, wherein titanium tungsten is used as a material for the release layer. 19. The method according to claim 1, further comprising a step of removing a portion in a thickness direction of the isolation layer exposed in the communication portion before the step of forming the protective film. A method for manufacturing a liquid jet head. The isolation layer includes an adhesion layer and a metal layer formed on the adhesion layer, and before the step of forming the protective film, the surface of the isolation layer is light-etched to at least remove the adhesion layer. The method of manufacturing a liquid jet head according to claim 19. A liquid jet head manufactured by the manufacturing method according to claim 1. The liquid ejecting head according to claim 21, wherein a fracture surface of the protective film formed on the vibration plate on the penetrating portion side faces the communication portion side. A liquid ejecting apparatus comprising the liquid ejecting head according to claim 21.

Images