JP2006245032A - 発光装置およびｌｅｄランプ - Google Patents

発光装置およびｌｅｄランプ Download PDF

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Publication number
JP2006245032A
JP2006245032A JP2005054406A JP2005054406A JP2006245032A JP 2006245032 A JP2006245032 A JP 2006245032A JP 2005054406 A JP2005054406 A JP 2005054406A JP 2005054406 A JP2005054406 A JP 2005054406A JP 2006245032 A JP2006245032 A JP 2006245032A
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JP
Japan
Prior art keywords
light emitting
emitting device
light
substrate
emitting element
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP2005054406A
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English (en)
Japanese (ja)
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JP2006245032A5 (enExample
Inventor
Hiroaki Kawaguchi
洋明 川口
Satoshi Wada
聡 和田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toyoda Gosei Co Ltd
Original Assignee
Toyoda Gosei Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toyoda Gosei Co Ltd filed Critical Toyoda Gosei Co Ltd
Priority to JP2005054406A priority Critical patent/JP2006245032A/ja
Publication of JP2006245032A publication Critical patent/JP2006245032A/ja
Publication of JP2006245032A5 publication Critical patent/JP2006245032A5/ja
Withdrawn legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144—Gold (Au) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/8538—Bonding interfaces outside the semiconductor or solid-state body
    • H01L2224/85399—Material
    • H01L2224/854—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/85438—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/85439—Silver (Ag) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/8538—Bonding interfaces outside the semiconductor or solid-state body
    • H01L2224/85399—Material
    • H01L2224/854—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/85438—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/85447—Copper (Cu) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00011—Not relevant to the scope of the group, the symbol of which is combined with the symbol of this group
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/1515—Shape
    • H01L2924/15158—Shape the die mounting substrate being other than a cuboid
    • H01L2924/15159—Side view
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation

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  • Led Device Packages (AREA)
  • Led Devices (AREA)
JP2005054406A 2005-02-28 2005-02-28 発光装置およびｌｅｄランプ Withdrawn JP2006245032A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2005054406A JP2006245032A (ja) 2005-02-28 2005-02-28 発光装置およびｌｅｄランプ

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2005054406A JP2006245032A (ja) 2005-02-28 2005-02-28 発光装置およびｌｅｄランプ

Publications (2)

Publication Number Publication Date
JP2006245032A true JP2006245032A (ja) 2006-09-14
JP2006245032A5 JP2006245032A5 (enExample) 2007-09-13

Family

ID=37051190

Family Applications (1)

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JP2005054406A Withdrawn JP2006245032A (ja) 2005-02-28 2005-02-28 発光装置およびｌｅｄランプ

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Country Link
JP (1) JP2006245032A (enExample)

Cited By (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2008054670A1 (en) * 2006-10-31 2008-05-08 Cree, Inc. Integrated heat spreaders for leds and related assemblies
JP2008192949A (ja) * 2007-02-07 2008-08-21 Nichia Chem Ind Ltd 発光装置およびその製造方法
JP2008227176A (ja) * 2007-03-13 2008-09-25 Sharp Corp 発光装置およびその製造方法
JP2008244075A (ja) * 2007-03-27 2008-10-09 Sharp Corp 発光装置
JP2009081194A (ja) * 2007-09-25 2009-04-16 Sanyo Electric Co Ltd 発光モジュールおよびその製造方法
JP2009194112A (ja) * 2008-02-14 2009-08-27 Dainippon Printing Co Ltd Ｌｅｄモジュール用基板とその作製方法、および該ｌｅｄモジュール用基板を用いたｌｅｄモジュール
JP2010003968A (ja) * 2008-06-23 2010-01-07 Panasonic Electric Works Co Ltd 発光装置
JP2010040802A (ja) * 2008-08-06 2010-02-18 Citizen Electronics Co Ltd 発光装置
JP2010056386A (ja) * 2008-08-29 2010-03-11 Sanyo Electric Co Ltd 発光モジュール
JP2011077275A (ja) * 2009-09-30 2011-04-14 Toppan Printing Co Ltd Ｌｅｄパッケージおよびその製造方法
JP2011082285A (ja) * 2009-10-06 2011-04-21 Citizen Electronics Co Ltd 発光ダイオード及びその製造方法
JP2011513966A (ja) * 2008-05-06 2011-04-28 ソンノ ユン プレス鍛造方式の発光ダイオード金属製ハウジング及び金属製ハウジングを用いた発光ダイオード金属製パッケージ
JP2011171508A (ja) * 2010-02-18 2011-09-01 Toppan Printing Co Ltd Ｌｅｄ発光素子用リードフレーム、ｌｅｄパッケージ及びｌｅｄ発光素子用リードフレームの製造方法
KR101072017B1 (ko) 2009-10-06 2011-10-10 엘지이노텍 주식회사 발광 소자 패키지 및 그 제조방법
JP2012004607A (ja) * 2011-10-06 2012-01-05 Sharp Corp 発光装置
WO2012053550A1 (ja) * 2010-10-19 2012-04-26 国立大学法人九州工業大学 Ｌｅｄモジュール装置とその製造方法、及び該ｌｅｄモジュール装置に用いるｌｅｄパッケージとその製造方法
JP2012089816A (ja) * 2010-10-19 2012-05-10 Unistars Corp パッケージ基板及びその製造方法
JP2012190841A (ja) * 2011-03-08 2012-10-04 Panasonic Corp Ｌｅｄパッケージ及びｌｅｄ照明装置
KR20130007592A (ko) 2010-03-30 2013-01-18 다이니폰 인사츠 가부시키가이샤 Ｌｅｄ용 리드 프레임 또는 기판, 반도체 장치, 및 ｌｅｄ용 리드 프레임 또는 기판의 제조 방법
WO2013018783A1 (ja) * 2011-08-01 2013-02-07 株式会社Ｓｔｅｑ 半導体装置及びその製造方法
CN103035584A (zh) * 2011-09-30 2013-04-10 三星电机株式会社 功率模块封装及制造该功率模块封装的方法
JP2013232594A (ja) * 2012-05-01 2013-11-14 Dainippon Printing Co Ltd Ｌｅｄ用リードフレームまたは基板およびその製造方法、ならびに半導体装置およびその製造方法
JP2013254937A (ja) * 2012-05-09 2013-12-19 Rohm Co Ltd 半導体発光装置
JP2015038902A (ja) * 2010-10-28 2015-02-26 国立大学法人九州工業大学 Ｌｅｄモジュール装置及びその製造方法
JP2016167540A (ja) * 2015-03-10 2016-09-15 シチズンホールディングス株式会社 発光モジュール
US9773960B2 (en) 2010-11-02 2017-09-26 Dai Nippon Printing Co., Ltd. Lead frame for mounting LED elements, lead frame with resin, method for manufacturing semiconductor devices, and lead frame for mounting semiconductor elements
JP2017538286A (ja) * 2014-11-12 2017-12-21 オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツングＯｓｒａｍ Ｏｐｔｏ Ｓｅｍｉｃｏｎｄｕｃｔｏｒｓ ＧｍｂＨ オプトエレクトロニクス半導体部品およびオプトエレクトロニクス半導体部品の製造方法
CN110832647A (zh) * 2018-06-11 2020-02-21 首尔伟傲世有限公司 发光二极管封装件及包括发光二极管封装件的光照射装置

Cited By (37)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7808013B2 (en) 2006-10-31 2010-10-05 Cree, Inc. Integrated heat spreaders for light emitting devices (LEDs) and related assemblies
WO2008054670A1 (en) * 2006-10-31 2008-05-08 Cree, Inc. Integrated heat spreaders for leds and related assemblies
JP2008192949A (ja) * 2007-02-07 2008-08-21 Nichia Chem Ind Ltd 発光装置およびその製造方法
JP2008227176A (ja) * 2007-03-13 2008-09-25 Sharp Corp 発光装置およびその製造方法
JP2008244075A (ja) * 2007-03-27 2008-10-09 Sharp Corp 発光装置
JP2009081194A (ja) * 2007-09-25 2009-04-16 Sanyo Electric Co Ltd 発光モジュールおよびその製造方法
JP2009194112A (ja) * 2008-02-14 2009-08-27 Dainippon Printing Co Ltd Ｌｅｄモジュール用基板とその作製方法、および該ｌｅｄモジュール用基板を用いたｌｅｄモジュール
JP2011513966A (ja) * 2008-05-06 2011-04-28 ソンノ ユン プレス鍛造方式の発光ダイオード金属製ハウジング及び金属製ハウジングを用いた発光ダイオード金属製パッケージ
JP2010003968A (ja) * 2008-06-23 2010-01-07 Panasonic Electric Works Co Ltd 発光装置
JP2010040802A (ja) * 2008-08-06 2010-02-18 Citizen Electronics Co Ltd 発光装置
JP2010056386A (ja) * 2008-08-29 2010-03-11 Sanyo Electric Co Ltd 発光モジュール
JP2011077275A (ja) * 2009-09-30 2011-04-14 Toppan Printing Co Ltd Ｌｅｄパッケージおよびその製造方法
JP2011082285A (ja) * 2009-10-06 2011-04-21 Citizen Electronics Co Ltd 発光ダイオード及びその製造方法
KR101072017B1 (ko) 2009-10-06 2011-10-10 엘지이노텍 주식회사 발광 소자 패키지 및 그 제조방법
JP2011171508A (ja) * 2010-02-18 2011-09-01 Toppan Printing Co Ltd Ｌｅｄ発光素子用リードフレーム、ｌｅｄパッケージ及びｌｅｄ発光素子用リードフレームの製造方法
US9966517B2 (en) 2010-03-30 2018-05-08 Dai Nippon Printing Co., Ltd. LED leadframe or LED substrate, semiconductor device, and method for manufacturing LED leadframe or LED substrate
KR20130007592A (ko) 2010-03-30 2013-01-18 다이니폰 인사츠 가부시키가이샤 Ｌｅｄ용 리드 프레임 또는 기판, 반도체 장치, 및 ｌｅｄ용 리드 프레임 또는 기판의 제조 방법
US9887331B2 (en) 2010-03-30 2018-02-06 Dai Nippon Printing Co., Ltd. LED leadframe or LED substrate, semiconductor device, and method for manufacturing LED leadframe or LED substrate
US9263315B2 (en) 2010-03-30 2016-02-16 Dai Nippon Printing Co., Ltd. LED leadframe or LED substrate, semiconductor device, and method for manufacturing LED leadframe or LED substrate
WO2012053550A1 (ja) * 2010-10-19 2012-04-26 国立大学法人九州工業大学 Ｌｅｄモジュール装置とその製造方法、及び該ｌｅｄモジュール装置に用いるｌｅｄパッケージとその製造方法
JP2012089816A (ja) * 2010-10-19 2012-05-10 Unistars Corp パッケージ基板及びその製造方法
JP2015038902A (ja) * 2010-10-28 2015-02-26 国立大学法人九州工業大学 Ｌｅｄモジュール装置及びその製造方法
US9773960B2 (en) 2010-11-02 2017-09-26 Dai Nippon Printing Co., Ltd. Lead frame for mounting LED elements, lead frame with resin, method for manufacturing semiconductor devices, and lead frame for mounting semiconductor elements
JP2012190841A (ja) * 2011-03-08 2012-10-04 Panasonic Corp Ｌｅｄパッケージ及びｌｅｄ照明装置
JP5456209B2 (ja) * 2011-08-01 2014-03-26 株式会社Ｓｔｅｑ 半導体装置及びその製造方法
US9812621B2 (en) 2011-08-01 2017-11-07 Shikoku Instrumentation Co., Ltd. Semiconductor device and fabrication method for same
WO2013018783A1 (ja) * 2011-08-01 2013-02-07 株式会社Ｓｔｅｑ 半導体装置及びその製造方法
CN103035584A (zh) * 2011-09-30 2013-04-10 三星电机株式会社 功率模块封装及制造该功率模块封装的方法
JP2012004607A (ja) * 2011-10-06 2012-01-05 Sharp Corp 発光装置
JP2013232594A (ja) * 2012-05-01 2013-11-14 Dainippon Printing Co Ltd Ｌｅｄ用リードフレームまたは基板およびその製造方法、ならびに半導体装置およびその製造方法
JP2013254937A (ja) * 2012-05-09 2013-12-19 Rohm Co Ltd 半導体発光装置
JP2017538286A (ja) * 2014-11-12 2017-12-21 オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツングＯｓｒａｍ Ｏｐｔｏ Ｓｅｍｉｃｏｎｄｕｃｔｏｒｓ ＧｍｂＨ オプトエレクトロニクス半導体部品およびオプトエレクトロニクス半導体部品の製造方法
JP2016167540A (ja) * 2015-03-10 2016-09-15 シチズンホールディングス株式会社 発光モジュール
CN110832647A (zh) * 2018-06-11 2020-02-21 首尔伟傲世有限公司 发光二极管封装件及包括发光二极管封装件的光照射装置
JP2021527336A (ja) * 2018-06-11 2021-10-11 ソウル バイオシス カンパニー リミテッドＳｅｏｕｌ Ｖｉｏｓｙｓ Ｃｏ．，Ｌｔｄ． 発光ダイオードパッケージ及び発光ダイオードパッケージを含む光照射装置
JP7337102B2 (ja) 2018-06-11 2023-09-01 ソウル バイオシス カンパニー リミテッド 発光ダイオードパッケージ、光照射装置、及び発光ダイオードパッケージの製造方法
CN110832647B (zh) * 2018-06-11 2023-12-08 首尔伟傲世有限公司 发光二极管封装件及包括发光二极管封装件的光照射装置

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