JP2006221796A - 半導体装置 - Google Patents

半導体装置 Download PDF

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Publication number
JP2006221796A
JP2006221796A JP2006075770A JP2006075770A JP2006221796A JP 2006221796 A JP2006221796 A JP 2006221796A JP 2006075770 A JP2006075770 A JP 2006075770A JP 2006075770 A JP2006075770 A JP 2006075770A JP 2006221796 A JP2006221796 A JP 2006221796A
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JP
Japan
Prior art keywords
voltage
memory cell
static memory
circuit
power supply
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2006075770A
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English (en)
Japanese (ja)
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JP2006221796A5 (enExample
Inventor
Kiyoo Ito
清男 伊藤
Koichiro Ishibashi
孝一郎 石橋
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Renesas Technology Corp
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Renesas Technology Corp
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Priority to JP2006075770A priority Critical patent/JP2006221796A/ja
Publication of JP2006221796A publication Critical patent/JP2006221796A/ja
Publication of JP2006221796A5 publication Critical patent/JP2006221796A5/ja
Pending legal-status Critical Current

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  • Static Random-Access Memory (AREA)
  • Semiconductor Memories (AREA)
JP2006075770A 1995-06-02 2006-03-20 半導体装置 Pending JP2006221796A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2006075770A JP2006221796A (ja) 1995-06-02 2006-03-20 半導体装置

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP13634995 1995-06-02
JP2006075770A JP2006221796A (ja) 1995-06-02 2006-03-20 半導体装置

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP02757496A Division JP4198201B2 (ja) 1995-06-02 1996-02-15 半導体装置

Publications (2)

Publication Number Publication Date
JP2006221796A true JP2006221796A (ja) 2006-08-24
JP2006221796A5 JP2006221796A5 (enExample) 2007-06-21

Family

ID=36983984

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2006075770A Pending JP2006221796A (ja) 1995-06-02 2006-03-20 半導体装置

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JP (1) JP2006221796A (enExample)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2019050407A (ja) * 2018-11-07 2019-03-28 ルネサスエレクトロニクス株式会社 半導体装置
US10482949B2 (en) 2014-10-31 2019-11-19 Renesas Electronics Corporation Semiconductor device
CN112885390A (zh) * 2021-02-24 2021-06-01 上海华力微电子有限公司 一种具有数据保持功能的低功耗静态随机存取存储器电路
WO2023240856A1 (zh) * 2022-06-17 2023-12-21 长鑫存储技术有限公司 一种数据处理电路、方法和半导体存储器

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10482949B2 (en) 2014-10-31 2019-11-19 Renesas Electronics Corporation Semiconductor device
JP2019050407A (ja) * 2018-11-07 2019-03-28 ルネサスエレクトロニクス株式会社 半導体装置
CN112885390A (zh) * 2021-02-24 2021-06-01 上海华力微电子有限公司 一种具有数据保持功能的低功耗静态随机存取存储器电路
WO2023240856A1 (zh) * 2022-06-17 2023-12-21 长鑫存储技术有限公司 一种数据处理电路、方法和半导体存储器

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