JP2006216736A - Semiconductor device and manufacturing method thereof - Google Patents

Semiconductor device and manufacturing method thereof Download PDF

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JP2006216736A
JP2006216736A JP2005027248A JP2005027248A JP2006216736A JP 2006216736 A JP2006216736 A JP 2006216736A JP 2005027248 A JP2005027248 A JP 2005027248A JP 2005027248 A JP2005027248 A JP 2005027248A JP 2006216736 A JP2006216736 A JP 2006216736A
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lead terminal
frame
semiconductor device
main surface
groove
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JP4565634B2 (en
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Toshishi Yokoe
稔志 横江
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Panasonic Holdings Corp
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Matsushita Electric Industrial Co Ltd
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    • H01L24/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
    • H01L24/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
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    • H01L2224/401—Disposition
    • H01L2224/40151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/40221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/40245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/40247—Connecting the strap to a bond pad of the item
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    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
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    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
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    • H01L2224/848—Bonding techniques
    • H01L2224/84801—Soldering or alloying
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    • H01L2224/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Lead Frames For Integrated Circuits (AREA)

Abstract

<P>PROBLEM TO BE SOLVED: To provide a semiconductor device for preventing generation of a defective product because of flowing of solder during the assembling work. <P>SOLUTION: Since a second principal surface of a firs end 7a of a frame 7 is formed so that it is accommodated within the internal side more than the front surface of an electrode 4, when the electrode 4 is connected by soldering with the first end 7a, the solder shows wet up-diffusion toward the side surface of the first end 7a from the external circumferential surface of the electrode 4 located at the external side of the first end 7a together with the self-alignment, for locating and keeping the first end 7a to the center of the electrode 4 with the surface tension and wet up-diffusion phenomenon. Consequently, a solder extension preventing means can be established. Accordingly, it can be prevented that the solder leaks to the external side of the electrode 4 and is adhered to the front surface or side surface of a semiconductor chip 3. <P>COPYRIGHT: (C)2006,JPO&NCIPI

Description

本発明は、金線などによるワイヤボンドをされず、ワイヤの代りに金属片でチップとリードとを繋いだワイヤボンドレスの半導体装置およびその製造方法に関する。   The present invention relates to a wire bondless semiconductor device in which a chip and a lead are connected by a metal piece instead of a wire, and a manufacturing method thereof.

従来の半導体装置としては、上面に電極部を設けた半導体チップと、該半導体チップの下面に接続した第一のリード端子と、電極部に接続した第二のリード端子と、半導体チップおよび第一乃至第二のリード端子の一部を覆うモールド部とを備えてなる半導体装置であって、電極部と第二のリード端子とをフレームを介して接続しているものがあった（例えば、特許文献１参照）。   As a conventional semiconductor device, a semiconductor chip having an electrode portion on the upper surface, a first lead terminal connected to the lower surface of the semiconductor chip, a second lead terminal connected to the electrode portion, the semiconductor chip and the first There is a semiconductor device including a mold part that covers a part of the second lead terminal, in which the electrode part and the second lead terminal are connected via a frame (for example, a patent). Reference 1).

図３は、特許文献１に記載された従来の半導体装置を示す図である。図３において、１０１は第一リード端子、１０２は第二リード端子、１０３は半導体チップ、１０５は電極部、１０７はフレーム、１０８はモールド部を示す。   FIG. 3 is a diagram showing a conventional semiconductor device described in Patent Document 1. In FIG. In FIG. 3, 101 is a first lead terminal, 102 is a second lead terminal, 103 is a semiconductor chip, 105 is an electrode part, 107 is a frame, and 108 is a mold part.

上記フレーム１０７は、電極部１０５と第二リード端子１０２との間を、該第二リード端子１０２と電極部１０５とに各々はんだ接続（図示せず）にて電気的に接続されている。この構成によって、フレーム１０７をその一方端部を電極部１０５上に、その他方端部を第二リード端子上に位置させて載置して接続することが可能となるため、半導体チップ１０３に対して押圧力を付加する必要なく上記接続が可能と成り、第一リード端子１０１上における半導体チップ１０３の位置ずれを発生させたり、電極部１０５を傷つけたりすることなく、容易に上記接続をなし得る事ができた。
特開平８−１４８６２３号公報 The frame 107 is electrically connected between the electrode portion 105 and the second lead terminal 102 by solder connection (not shown) to the second lead terminal 102 and the electrode portion 105. With this configuration, the frame 107 can be mounted and connected with its one end positioned on the electrode section 105 and the other end positioned on the second lead terminal. Thus, the above connection can be made without the need to apply a pressing force, and the above connection can be easily made without causing the displacement of the semiconductor chip 103 on the first lead terminal 101 or damaging the electrode portion 105. I was able to.
JP-A-8-148623

しかしながら、従来の構成では、フレーム１０７と、電極部１０５及び第二リード端子１０２とをはんだ接続させる際の熱で融解したはんだが、毛管現象にてフレーム１０７と半導体チップ１０３との間隙を伝って電極部１０５の外へ流れ出て、極端な場合は半導体チップ１０３の側面にまで達する事が有り、これらの場合は半導体チップ１０３の電気特性が、リーク大やショートといった半導体装置としての電気特性が損なわれた不具合品となる課題を有していた。   However, in the conventional configuration, the solder melted by heat when soldering the frame 107 to the electrode portion 105 and the second lead terminal 102 travels through the gap between the frame 107 and the semiconductor chip 103 by capillary action. In extreme cases, it may flow out of the electrode part 105 and reach the side surface of the semiconductor chip 103. In these cases, the electrical characteristics of the semiconductor chip 103 are impaired as electrical characteristics as a semiconductor device such as a large leak or short circuit. It had the problem of becoming a defective product.

本発明は、従来の課題を解決するもので、組み立ての際にロー付けするにおいて、融解したロー材が流れて不具合品となる事が無く、且つ、効率良く製造が可能な半導体装置とその製造方法を提供する事を目的とする。   SUMMARY OF THE INVENTION The present invention solves the conventional problems, and a semiconductor device that can be efficiently manufactured without causing a molten solder material to flow and become a defective product when brazed during assembly, and its manufacture The purpose is to provide a method.

従来の課題を解決するために、本半導体装置の発明は、クランク状に段差を設けてフォーミングされた第一リード端子の上段第一主面に半導体チップがロー付けにて電気的に導通され、該半導体チップの第一主面には電極部を有し、クランク状に段差を設けてフォーミングされた第二リード端子が第一リード端子と対向して、且つ、第一リード端子の下段第二主面と第二リード端子の下段第二主面とが同一面に設けられ、電極部と第二リード端子の上段第一主面とにロー材を有し、電極部と第二リード端子の上段第一主面とをロー材で接続されたフレームを介して電気的に導通され、半導体チップと電極部とロー材とフレームと、第一リード端子と第二リード端子との一部を含んで覆ったモールド部を備えてなる半導体装置に於いて、フレームに毛管現象によるロー材の延展防止手段を備えており、ロー材の延展防止手段はクランク状に段差を設けたフレームの第一先端部の第二主面を電極部表面よりも内側に納まる大きさに形成された構成で、ロー付けの際にロー材が第一先端部の側面に濡れ上がる事を特徴とする。   In order to solve the conventional problems, the semiconductor device of the present invention is electrically conductive by brazing the upper first main surface of the first lead terminal formed by providing a step in a crank shape, The first main surface of the semiconductor chip has an electrode portion, a second lead terminal formed with a step in a crank shape is opposed to the first lead terminal, and the lower second second terminal of the first lead terminal. The main surface and the lower second main surface of the second lead terminal are provided on the same surface, the electrode portion and the upper first main surface of the second lead terminal have a brazing material, and the electrode portion and the second lead terminal It is electrically connected to the upper first main surface through a frame connected by a brazing material, and includes a semiconductor chip, an electrode portion, a brazing material, a frame, and a part of a first lead terminal and a second lead terminal. In a semiconductor device comprising a mold part covered with Is provided with a means for preventing the spread of brazing material due to capillary action, and the means for preventing the spreading of brazing material is such that the second main surface of the first tip of the frame having a stepped shape in the form of a crank fits inside the electrode surface. The brazing material is characterized in that the brazing material is wetted onto the side surface of the first tip portion during brazing.

本半導体装置の別の発明は、ロー材の延展防止手段はフレームの第二主面で該フレームの幅方向に横断して、且つ、電極部の両端である外縁近傍の内側に対比する部位の二箇所に溝切りされた第一の溝が形成されたもので、ロー付けの際にロー材が第一の溝に吸い上がる事を特徴とする。   According to another invention of the present semiconductor device, the brazing material spreading preventing means is a portion of the second main surface of the frame that crosses the width direction of the frame and is opposed to the inside of the vicinity of the outer edge that is both ends of the electrode portion. A first groove cut in two places is formed, and the brazing material is sucked up into the first groove during brazing.

また、本半導体装置の別の発明は、フレームの第二主面で該フレームの幅方向に横断して、且つ、電極部の両端である外縁近傍の内側に対比する部位の二箇所に溝切りされた第一の溝が形成されたもので、ロー付けの際にロー材が第一の溝に吸い上がる事を特徴とする。   Further, another invention of the present semiconductor device is provided with grooves at two locations which are crossed in the width direction of the frame on the second main surface of the frame and compared to the inside of the vicinity of the outer edge which is both ends of the electrode portion. The first groove is formed, and the brazing material is sucked up into the first groove when brazing.

また、本半導体装置の別の発明は、電極部表面と第二リード端子の上段第一主面とが同一高さに位置する事を特徴とする。   Another invention of the present semiconductor device is characterized in that the surface of the electrode portion and the upper first main surface of the second lead terminal are positioned at the same height.

また、本半導体装置の別の発明は、フレームの形状が左右対称で、双方の先端が同様な構成である事を特徴とする。   Another invention of the present semiconductor device is characterized in that the shape of the frame is bilaterally symmetric and the tips of both are the same.

また、本半導体装置の別の発明は、フレームの先端形状が、クランク状に段差を設けた第一先端部と、該第一先端部に対して反対側に形成されたクランク状の段差である第二先端部とで左右対称である事を特徴とする。   In another aspect of the present invention, the tip shape of the frame is a first tip portion having a crank-like step, and a crank-like step formed on the opposite side of the first tip portion. It is characterized by being symmetrical with the second tip.

また、本半導体装置の別の発明は、フレームの先端形状が、第一の溝と、該第一の溝に対して反対側に形成された第二の溝とで左右対称である事を特徴とする。   Another invention of the present semiconductor device is characterized in that the shape of the tip of the frame is symmetrical between the first groove and the second groove formed on the opposite side to the first groove. And

また、本半導体装置の別の発明は、フレームの形状が、第一の溝と第二の溝とを有して左右対称であると共に、該第一の溝を有する面の反対側の面にも溝を有し、面対称である事を特徴とする。   According to another invention of the present semiconductor device, the shape of the frame has a first groove and a second groove and is bilaterally symmetric, and on the surface opposite to the surface having the first groove. Has a groove and is plane-symmetrical.

本構成によって、組み立ての際にロー付けするにおいて、融解したロー材が流れて不具合品となる事が無く、且つ、効率良く製造が可能な半導体装置とすることができる。   With this configuration, when brazing is performed during assembly, the molten brazing material does not flow and become a defective product, and the semiconductor device can be manufactured efficiently.

以上のように、本発明の半導体装置によれば、組み立ての際にロー材の延展による不具合品が発生を防止出来て、効率良く製造が可能な半導体装置とすることができる。   As described above, according to the semiconductor device of the present invention, it is possible to prevent a defective product due to the spreading of the brazing material during assembly, and to obtain a semiconductor device that can be efficiently manufactured.

以下、本発明の実施の形態について、図面を参照しながら説明する。図１は発明の実施の形態を示す断面図であり、図２は発明の製造方法を示す上面図である。   Hereinafter, embodiments of the present invention will be described with reference to the drawings. FIG. 1 is a sectional view showing an embodiment of the invention, and FIG. 2 is a top view showing a manufacturing method of the invention.

図１および図２において、１は第一リード端子、２は第二リード端子、３は半導体チップ、４は電極部、５は第一のはんだ、６は第二のはんだ、７はフレーム、７ａは第一先端部、７ｂは第二先端部、８はモールド部、１０はフレームII、１０ａは第一の溝、１０ｂは第二の溝を各々示している。   1 and 2, 1 is a first lead terminal, 2 is a second lead terminal, 3 is a semiconductor chip, 4 is an electrode portion, 5 is a first solder, 6 is a second solder, 7 is a frame, and 7a. Is the first tip, 7b is the second tip, 8 is the mold part, 10 is the frame II, 10a is the first groove, and 10b is the second groove.

（実施の形態１）
図１（ａ）は、本発明の実施の形態１に係る半導体装置の断面図である。図１（ａ）は、クランク状に段差を設けてフォーミングされた第一リード端子１の上段第一主面に半導体チップ３がロー付けにて電気的に導通され、該半導体チップ３の第一主面には電極部４を有し、クランク状に段差を設けてフォーミングされた第二リード端子２が第一リード端子１と対向して、且つ、第一リード端子１の下段第二主面と該第二リード端子２の下段第二主面とが同一面に設けられ、電極部４と第二リード端子２の上段第一主面とにロー材である第一のはんだ５とロー材である第二のはんだ６とを有し、電極部４と第二リード端子２の上段第一主面とを第一のはんだ５と第二のはんだ６とではんだ接続された金属片であるフレーム７を介して電気的に導通され、半導体チップ３と電極部４と第一のはんだ５と第二のはんだ６とフレーム７と、第一リード端子１と第二リード端子２との一部を含んで覆ったモールド部８を備えてなる半導体装置である。 (Embodiment 1)
FIG. 1A is a cross-sectional view of the semiconductor device according to the first embodiment of the present invention. In FIG. 1A, the semiconductor chip 3 is electrically connected to the upper first main surface of the first lead terminal 1 formed with a step in a crank shape by brazing. The main surface has an electrode portion 4, the second lead terminal 2 formed with a step in a crank shape is opposed to the first lead terminal 1, and the lower second main surface of the first lead terminal 1 And the lower second main surface of the second lead terminal 2 are provided on the same surface, and the first solder 5 and the brazing material which are the brazing material on the electrode portion 4 and the upper first main surface of the second lead terminal 2 And a second solder 6, and the electrode part 4 and the upper first main surface of the second lead terminal 2 are solder-connected by the first solder 5 and the second solder 6. The semiconductor chip 3, the electrode portion 4, the first solder 5, and the second solder 6 are electrically connected through the frame 7. A frame 7, a semiconductor device including a mold portion 8 which covers comprise a portion of the first lead terminal 1 and the second lead terminal 2.

ここで、上述のフレーム７は、その両端が該フレーム７に対して下段となる方向に各々クランク状に段差を設けてフォーミングされたフレーム７の第一先端部７ａと第二先端部７ｂとして形成されており、第一先端部７ａの第二主面側と電極部４と、第二先端部７ｂの第二主面側と第二リード端子２の上段第一主面とを各々第一のはんだ５と第二のはんだ６とを介して電気的に導通を取って固定されているが、第一先端部７ａの第二主面を電極部４表面よりも内側に納まる様に小さく形成されている。   Here, the above-mentioned frame 7 is formed as a first tip portion 7a and a second tip portion 7b of the frame 7 formed by providing steps in a crank shape in the direction in which both ends thereof are lower than the frame 7, respectively. The first main surface side of the first tip portion 7a and the electrode portion 4, the second main surface side of the second tip portion 7b, and the upper first main surface of the second lead terminal 2 are respectively set to the first main surface side. Although electrically connected through the solder 5 and the second solder 6 and fixed, the second main surface of the first tip portion 7a is formed small so as to fit inside the surface of the electrode portion 4. ing.

かかる構成によれば、半導体装置としての組み立ての際に、電極部４と第一先端部７ａとをはんだ接続させる際の熱で融解したはんだが、表面張力と濡れ上がり現象とによって第一先端部７ａを電極部４の中央に位置させて保つセルフアライメントと共に、第一先端部７ａの外側に位置する電極部４の外周面から第一先端部７ａ側面にかけて濡れ上がって行き（図示せず）、毛管現象によるはんだの延展防止手段と成り、電極部４の外側にはんだが流れ出て半導体チップ３の表面や側面に付着する事が防止できるので、融解したはんだが流れて不具合品となる事のない半導体装置とすることができる。   According to such a configuration, during assembly as a semiconductor device, the solder melted by heat when the electrode portion 4 and the first tip portion 7a are solder-connected causes the first tip portion due to the surface tension and the wetting phenomenon. Along with self-alignment that keeps 7a positioned at the center of the electrode part 4, the electrode part 4 located outside the first tip part 7a wets from the outer peripheral surface to the side surface of the first tip part 7a (not shown), It becomes a means for preventing the spread of solder due to the capillary phenomenon, and prevents the solder from flowing out to the outside of the electrode part 4 and adhering to the surface or side surface of the semiconductor chip 3, so that the molten solder does not flow and become a defective product. A semiconductor device can be obtained.

また、電極部４表面と第二リード端子２の上段第一主面とを同一高さの面とする事によって、フレーム７の形状を左右対称とすることが可能なので、組み立ての際の部品供給としてフレーム７の方向性を考慮する必要が無くなる事や、組み立ての際第一のはんだ５と第二のはんだ６とが同一高さの面に載置できるので、スクリーン印刷等を用いて一括してクリームはんだとして第一のはんだ５と第二のはんだ６とを材料供給できるので、製造の簡略化や高効率化が可能な半導体装置とすることができる。   In addition, since the surface of the electrode portion 4 and the upper first main surface of the second lead terminal 2 have the same height, the shape of the frame 7 can be made symmetrical, so that parts can be supplied during assembly. As a result, it is not necessary to consider the orientation of the frame 7, and the first solder 5 and the second solder 6 can be placed on the same height surface during assembly. Since the first solder 5 and the second solder 6 can be supplied as cream solder, it is possible to provide a semiconductor device capable of simplifying manufacturing and increasing efficiency.

この様な半導体装置の製造方法としては、図２を参考にできる。即ち、第一リード端子１と該第一リード端子１に段差の上段同士を対向させて形成された第二リード端子２とを含んで連続した枠体に形成されたリードフレームの第一リード端子１の上段第一主面にはんだ等（図示せず）を介して半導体チップ３をロー付けするチップ接着工程と、該半導体チップ３の上面に形成された電極部（図示せず）上と第二リード端子２上とに印刷や塗布等の方法を用いて第一のはんだ５と第二のはんだ６とを載置してフレーム７を第一のはんだ５と第二のはんだ６とに架けて載置するフレーム載置工程と、加熱炉を用いて第一のはんだ５と第二のはんだ６とを融解して電極部（図示せず）と第二リード端子２とに架けてフレーム７をロー付けするフレーム接着工程と、モールド型にリードフレームを勘合させて半導体チップ３とフレーム７と、第一リード端子１と第二リード端子２との一部を含んだキャビティーを形成し該キャビティー内にモールド用樹脂を注入して加熱硬化させてモールド部８を形成するモールド工程と、モールド部８から引き出されたリードフレームの一部である第一リード端子１と第二リード端子２とのリード端子先端予定部を各々切断して外部引出し端子としての第一リード端子１と第二リード端子２とするリード端子切断工程とにより製造する事ができる。   As a method for manufacturing such a semiconductor device, FIG. 2 can be referred to. That is, the first lead terminal of the lead frame formed in the continuous frame including the first lead terminal 1 and the second lead terminal 2 formed so that the upper stages of the steps are opposed to the first lead terminal 1. A chip bonding process in which the semiconductor chip 3 is brazed to the upper first main surface of the semiconductor chip 1 via solder or the like (not shown), and an electrode portion (not shown) formed on the upper surface of the semiconductor chip 3 The first solder 5 and the second solder 6 are placed on the two lead terminals 2 by a method such as printing or coating, and the frame 7 is hung on the first solder 5 and the second solder 6. A frame placing step for placing the first solder 5 and the second solder 6 using a heating furnace, and linking the electrode portion (not shown) and the second lead terminal 2 to the frame 7. The frame bonding process to braze and the lead frame to fit the mold mold A cavity including a part of the chip 3, the frame 7, the first lead terminal 1 and the second lead terminal 2 is formed, a molding resin is injected into the cavity, and the mold portion 8 is cured by heating. A molding step to be formed, and first lead terminal leading portions of the first lead terminal 1 and the second lead terminal 2 that are part of the lead frame drawn out from the mold portion 8 are cut to form a first as an external lead terminal. The lead terminal 1 and the second lead terminal 2 can be manufactured by a lead terminal cutting step.

（実施の形態２）
図１（ｂ）は、本発明の実施の形態２に係る半導体装置の断面図である。図１（ｂ）は、実施の形態１で示した図１（ａ）の第二リード端子２の上段第一主面と電極部４表面とを同一高さの面とし、フレーム７をフレームII１０に置き換えたもので、他は図１（ａ）と同様である。 (Embodiment 2)
FIG. 1B is a cross-sectional view of the semiconductor device according to the second embodiment of the present invention. In FIG. 1B, the upper first main surface of the second lead terminal 2 of FIG. 1A shown in the first embodiment and the surface of the electrode portion 4 are flush with each other, and the frame 7 is frame II10. The others are the same as in FIG.

ここで、フレームII１０は、上述のフレーム７の様なフォーミングにて段差を設ける事なく、電極部４上面と第二リード端子２の上段第一主面とを略直線状に繋ぐものである。また、フレームII１０の電極部４上部に位置する部分は、その有する寸法幅が電極部４の対比する寸法よりも狭く、該フレームII１０の第二主面で幅方向に横断して、且つ、電極部４の両端である外縁近傍の内側に対比する部位の二箇所に溝切りされた第一の溝１０ａが形成されている。   Here, the frame II10 connects the upper surface of the electrode portion 4 and the upper first main surface of the second lead terminal 2 substantially linearly without forming a step by forming as in the frame 7 described above. Further, the portion of the frame II10 located above the electrode portion 4 has a narrower width than the size of the electrode portion 4, and crosses the second main surface of the frame II10 in the width direction. A first groove 10a is formed in two portions of a portion to be compared with the inside of the vicinity of the outer edge that is both ends of the portion 4.

かかる構成によれば、半導体装置としての組み立ての際に電極部４とフレームII１０とをはんだ接続させる際の熱で融解したはんだが、濡れ上がり現象と毛管現象とによって、フレームII１０の幅方向外側に位置する電極部４の表面からフレームII１０側面にかけて濡れ上がって行き（図示せず）、フレームII１０と電極部４との間隙を伝って該フレームII１０の長さ方向の電極部４の外へ流れ出ようとするはんだが、毛管現象によって第一の溝１０ａに吸い上がって行き（図示せず）、毛管現象によるはんだの延展防止手段と成り、電極部４の外側にはんだが流れ出て半導体チップ３の表面や側面に付着する事が防止できるので、融解したはんだが流れて不具合品となる事がない半導体装置とすることができる。   According to such a configuration, the solder melted by heat at the time of assembling the electrode part 4 and the frame II10 at the time of assembly as a semiconductor device is moved outward in the width direction of the frame II10 by the wetting phenomenon and the capillary phenomenon. Wet up (not shown) from the surface of the electrode part 4 positioned to the side surface of the frame II10 (not shown) and flow out of the electrode part 4 in the longitudinal direction of the frame II10 through the gap between the frame II10 and the electrode part 4 The solder to be sucked up into the first groove 10a by capillarity (not shown) serves as a means for preventing the solder from spreading due to capillarity, and the solder flows out of the electrode portion 4 and the surface of the semiconductor chip 3 Therefore, it is possible to provide a semiconductor device in which molten solder does not flow and become a defective product.

また、図１（ｃ）は、上述の第一の溝１０ａを設けたフレームII１０であるが、図１（ｄ）に示す様にフレームII１０の一端に設けた第一の溝１０ａと、フレームII１０の他端にも同様に第二の溝１０ｂを設ける事によって左右対称形状とすることが可能なので、組み立ての際の部品供給としてフレームII１０の両端方向性を考慮する必要が無くなり、更に、フレームII１０を表裏同形状とすることによって組み立ての際の部品供給としてフレームII１０の両端表裏方向性を考慮する必要が無くなるので、製造の簡略化や高効率化が可能な半導体装置とすることができる。   1C shows the frame II10 provided with the first groove 10a described above. As shown in FIG. 1D, the first groove 10a provided at one end of the frame II10 and the frame II10 are provided. Similarly, by providing the second groove 10b at the other end of the frame, it is possible to make it a bilaterally symmetric shape, so that it is not necessary to consider the directionality of both ends of the frame II10 when supplying parts during assembly. By making the front and back the same shape, it is not necessary to consider the direction of both ends of the frame II10 as a component supply at the time of assembly, so that a semiconductor device capable of simplifying manufacturing and improving efficiency can be obtained.

尚、実施の形態１の第一先端部７ａおよび第二先端部７ｂに、実施の形態２の第一の溝１０ａおよび第二の溝１０ｂを形成して、実施の形態１と実施の形態２とのはんだ流れ止め手段を併用しても良い。   The first groove 10a and the second groove 10b of the second embodiment are formed in the first tip 7a and the second tip 7b of the first embodiment, and the first and second embodiments are formed. You may use together a solder flow stop means.

面実装タイプの半導体パッケージとして有用であり、特に内部配線に大電流が可能な半導体装置に適している。   It is useful as a surface-mounting type semiconductor package, and is particularly suitable for a semiconductor device capable of large current in internal wiring.

本発明の半導体装置の断面図Sectional view of the semiconductor device of the present invention 本発明の製造方法を示す上面図The top view which shows the manufacturing method of this invention 従来の半導体装置を示す断面図Sectional view showing a conventional semiconductor device

符号の説明Explanation of symbols

１ 第一リード端子
２ 第二リード端子
３ 半導体チップ
４ 電極部
５ 第一のはんだ
６ 第二のはんだ
７ フレーム
７ａ 第一先端部
７ｂ 第二先端部
８ モールド部
１０ フレームII
１０ａ 第一の溝
１０ｂ 第二の溝

DESCRIPTION OF SYMBOLS 1 1st lead terminal 2 2nd lead terminal 3 Semiconductor chip 4 Electrode part 5 First solder 6 Second solder 7 Frame 7a First tip part 7b Second tip part 8 Mold part 10 Frame II
10a First groove 10b Second groove

Claims (9)

クランク状に段差を設けてフォーミングされた第一リード端子の上段第一主面に半導体チップがロー付けにて電気的に導通され、該半導体チップの第一主面には電極部を有し、クランク状に段差を設けてフォーミングされた第二リード端子が前記第一リード端子と対向して且つ前記第一リード端子の下段第二主面と前記第二リード端子の下段第二主面とが同一面に設けられ、前記電極部と前記第二リード端子の上段第一主面とにロー材を有し、前記電極部と前記第二リード端子の上段第一主面とを前記ロー材で接続されたフレームを介して電気的に導通され、前記半導体チップと前記電極部と前記ロー材と前記フレームと、前記第一リード端子と前記第二リード端子との一部を含んで覆ったモールド部を備えてなる半導体装置に於いて、
前記フレームに毛管現象による前記ロー材の延展防止手段を備えた事を特徴とする半導体装置。 The semiconductor chip is electrically connected to the upper first main surface of the first lead terminal formed by providing a step in a crank shape by brazing, and the first main surface of the semiconductor chip has an electrode portion, A second lead terminal formed with a step in a crank shape is opposed to the first lead terminal, and a lower second main surface of the first lead terminal and a lower second main surface of the second lead terminal are Provided on the same surface, having a brazing material on the electrode portion and the upper first main surface of the second lead terminal, and connecting the electrode portion and the upper first main surface of the second lead terminal with the brazing material. A mold that is electrically connected through a connected frame and includes a part of the semiconductor chip, the electrode portion, the brazing material, the frame, the first lead terminal, and the second lead terminal. In a semiconductor device comprising a portion,
A semiconductor device characterized in that the frame is provided with means for preventing the brazing material from spreading due to capillary action. 前記ロー材の延展防止手段はクランク状に段差を設けた前記フレームの第一先端部の第二主面を前記電極部表面よりも内側に納まる大きさに形成された構成で、ロー付けの際に前記ロー材が前記第一先端部の側面に濡れ上がる事を特徴とする請求項１に記載の半導体装置。   The brazing material spreading preventing means is configured to have a size in which the second main surface of the first tip portion of the frame provided with a step in a crank shape is accommodated inside the surface of the electrode portion. The semiconductor device according to claim 1, wherein the brazing material is wetted on a side surface of the first tip portion. 前記ロー材の延展防止手段は前記フレームの第二主面で該フレームの幅方向に横断して且つ前記電極部の両端である外縁近傍の内側に対比する部位の二箇所に溝切りされた第一の溝が形成された構成で、ロー付けの際に前記ロー材が前記第一の溝に吸い上がる事を特徴とする請求項１及び２に記載の半導体装置。   The brazing material extending preventing means is grooved at two locations on the second main surface of the frame, which are crossed in the width direction of the frame and in contrast to the inside of the vicinity of the outer edge that is both ends of the electrode portion. 3. The semiconductor device according to claim 1, wherein in the configuration in which one groove is formed, the brazing material is sucked up into the first groove during brazing. 4. 前記電極部表面と前記第二リード端子の上段第一主面とが同一高さに位置する事を特徴とする請求項１から３に記載の半導体装置。   4. The semiconductor device according to claim 1, wherein the surface of the electrode portion and the upper first main surface of the second lead terminal are positioned at the same height. 5. 前記フレームの形状が左右対称で、双方の先端が同様な構成である事を特徴とする請求項１から４に記載の半導体装置。   5. The semiconductor device according to claim 1, wherein the shape of the frame is bilaterally symmetric, and both ends have the same configuration. 前記フレームの先端形状が、クランク状に段差を設けた前記第一先端部と、該第一先端部に対して反対側に形成されたクランク状の段差である第二先端部とで左右対称である事を特徴とする請求項１から５に記載の半導体装置。   The front end shape of the frame is symmetrical between the first front end portion having a crank-like step and a second front end portion that is a crank-like step formed on the opposite side to the first front end portion. The semiconductor device according to claim 1, wherein the semiconductor device is provided. 前記フレームの先端形状が、前記第一の溝と、該第一の溝に対して反対側に形成された第二の溝とで左右対称である事を特徴とする請求項１から６に記載の半導体装置。   The tip shape of the frame is bilaterally symmetric between the first groove and a second groove formed on the opposite side to the first groove. Semiconductor device. 前記フレームの形状が、前記第一の溝と前記第二の溝とを有して左右対称であると共に、該第一の溝を有する面の反対側の面にも溝を有し、面対称である事を特徴とする請求項１から５及び７に記載の半導体装置。   The shape of the frame is symmetrical with the first groove and the second groove, and has a groove on the surface opposite to the surface with the first groove. The semiconductor device according to claim 1, wherein the semiconductor device is a semiconductor device. クランク状に段差を設けてフォーミングされた第一リード端子と第二リード端子とを有し、該第一リード端子に段差の上段同士を対向させて形成された第二リード端子とを含んで連続した枠体に形成されたリードフレームの前記第一リード端子の上段第一主面に半導体チップをロー付けするチップ接着工程と、
前記半導体チップの上面に形成された電極部上と前記第二リード端子の上段第一主面上とに架けてロー材を介してフレームを載置するフレーム載置工程と、加熱炉を用いて前記ロー材を融解して前記電極部と前記第二リード端子の上段第一主面上とに架けて前記フレームをロー付けするフレーム接着工程と、
モールド型に前記リードフレームを勘合させて前記半導体チップと前記フレームと、前記第一リード端子と前記第二リード端子との一部を含んだキャビティーを形成して該キャビティー内にモールド用樹脂を注入して加熱硬化させてモールド部を形成するモールド工程と、
前記モールド部から引き出された前記リードフレームの一部である前記第一リード端子と前記第二リード端子とのリード端子先端予定部を各々切断して外部引出し端子としての該第一リード端子と該第二リード端子とするリード端子切断工程とから成る事を特徴とする半導体装置の製造方法。

A first lead terminal and a second lead terminal formed with a step in a crank shape are formed, and the first lead terminal and the second lead terminal formed so that the upper steps of the step are opposed to each other are continuous. A chip bonding step of brazing a semiconductor chip to the upper first main surface of the first lead terminal of the lead frame formed on the frame,
A frame placing step of placing a frame on the electrode portion formed on the upper surface of the semiconductor chip and the upper first main surface of the second lead terminal via a brazing material, and using a heating furnace A frame adhesion step of melting the brazing material and brazing the frame over the electrode portion and the upper first main surface of the second lead terminal;
The lead frame is fitted into a mold to form a cavity including a part of the semiconductor chip, the frame, the first lead terminal, and the second lead terminal, and a molding resin is formed in the cavity. Mold step of injecting and curing by heating to form a mold part,
The first lead terminal as an external lead terminal by cutting each lead terminal leading end portion of the first lead terminal and the second lead terminal that are part of the lead frame drawn out from the mold part, A method for manufacturing a semiconductor device, comprising: a lead terminal cutting step for forming a second lead terminal.

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