JP2006210460A5 - - Google Patents

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JP2006210460A5
JP2006210460A5 JP2005017700A JP2005017700A JP2006210460A5 JP 2006210460 A5 JP2006210460 A5 JP 2006210460A5 JP 2005017700 A JP2005017700 A JP 2005017700A JP 2005017700 A JP2005017700 A JP 2005017700A JP 2006210460 A5 JP2006210460 A5 JP 2006210460A5
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Japan
Prior art keywords
optical
photoelectric conversion
electron beam
exposure apparatus
conversion unit
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JP2005017700A
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Japanese (ja)
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JP4652829B2 (en
JP2006210460A (en
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Priority to JP2005017700A priority Critical patent/JP4652829B2/en
Priority claimed from JP2005017700A external-priority patent/JP4652829B2/en
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Publication of JP2006210460A5 publication Critical patent/JP2006210460A5/ja
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Claims (7)

複数の電子ビームの照射を個別に制御する複数のブランキング電極と、前記ブランキング電極を駆動するための駆動
信号を伝送する伝送線路とを備えた電子光学系を用いて、露光ビームを試料上に収束させ所定のパターンを露光する電子線露光装置において、
前記伝送線路は、光伝送路と、前記光伝送路の始点側で前記駆動信号を電気信号から光信号に変換する第1の光電変換部と、前記光伝送路の終点側で前記第1の光電変換部で変換された光信号を電気信号に変換する第2の光電変換部とを有し、前記第2の光電変換部で変換された電気信号を前記ブランキング電極に入力することを特徴とする電子線露光装置。
Using an electron optical system that includes a plurality of blanking electrodes that individually control irradiation of a plurality of electron beams and a transmission line that transmits a drive signal for driving the blanking electrodes, an exposure beam is applied to the sample . In an electron beam exposure apparatus that converges and exposes a predetermined pattern,
The transmission line includes an optical transmission line, a first photoelectric conversion unit that converts the drive signal from an electric signal to an optical signal on the start point side of the optical transmission line, and the first photoelectric conversion unit on the end point side of the optical transmission line. characterized by a second photoelectric conversion unit for converting the converted optical signal by the photoelectric conversion section into an electrical signal, and inputs the electric signal converted by the second photoelectric conversion unit to said blanking electrodes An electron beam exposure apparatus.
前記光伝送路は基板に形成された光導波路を有する、ことを特徴とする請求項1に記載の電子線露光装置。 The electron beam exposure apparatus according to claim 1, wherein the optical transmission path has an optical waveguide formed on a substrate. 前記ブランキング電極が形成された第1の基板を有し、前記光伝送路はその終点に載置された前記第2の光電変換部と共に前記第1の基板上に形成されてなる、ことを特徴とする請求項2に記載の電子線露光装置。 A first substrate on which the blanking electrode is formed, and the optical transmission path is formed on the first substrate together with the second photoelectric conversion unit placed at an end point thereof. 3. The electron beam exposure apparatus according to claim 2, wherein 前記ブランキング電極が形成された第1の基板と、前記第1の基板上に形成された前記ブランキング電極へ駆動信号を中継するための第2の基板とを有し、前記光伝送路はその終点に載置された前記第2の光電変換部と共に前記第2の基板上に形成されてなる、ことを特徴とする請求項2に記載の電子線露光装置。 A first substrate on which the blanking electrode is formed; and a second substrate for relaying a drive signal to the blanking electrode formed on the first substrate, wherein the optical transmission path is The electron beam exposure apparatus according to claim 2, wherein the electron beam exposure apparatus is formed on the second substrate together with the second photoelectric conversion unit placed at the end point. 前記第2の光電変換部は発電素子である、ことを特徴とする請求項1乃至4の何れか一項に記載の電子線露光装置。 The second photoelectric conversion unit is a power generating element, it electron beam exposure apparatus according to any one of claims 1 to 4, characterized in. 前記第1の光電変換部にて変換された光信号を伝送する光ファイバと、前記光導波路の始点に載置され前記光ファイバと結合するための光結合器とを有し、前記駆動信号は前記光ファイバを通り前記光結合器を経由して前記光導波路に導入され、前記ブランキング電極を駆動する、ことを特徴とする請求項2乃至5の何れか一項に記載の電子線露光装置。 An optical fiber that transmits the optical signal converted by the first photoelectric conversion unit; and an optical coupler that is placed at a starting point of the optical waveguide and is coupled to the optical fiber, and the drive signal is via the street the optical coupler of the optical fiber is introduced into the optical waveguide, the blanking drives the ranking electrodes, that the electron beam exposure apparatus according to any one of claims 2 to 5, wherein . 請求項1乃至6の何れか一項に記載の電子線露光装置を用いて、前記試料に露光を行う工程と、露光された前記試料を現像する工程と、を具備することを特徴とするデバイス製造方法。 Device using an electron beam exposure apparatus according to any one of claims 1 to 6, and performing exposure to the sample, a step of developing the exposed the sample, characterized by comprising Production method.
JP2005017700A 2005-01-26 2005-01-26 Electron beam exposure apparatus and device manufacturing method Expired - Fee Related JP4652829B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2005017700A JP4652829B2 (en) 2005-01-26 2005-01-26 Electron beam exposure apparatus and device manufacturing method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2005017700A JP4652829B2 (en) 2005-01-26 2005-01-26 Electron beam exposure apparatus and device manufacturing method

Publications (3)

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JP2006210460A JP2006210460A (en) 2006-08-10
JP2006210460A5 true JP2006210460A5 (en) 2008-03-06
JP4652829B2 JP4652829B2 (en) 2011-03-16

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JP2005017700A Expired - Fee Related JP4652829B2 (en) 2005-01-26 2005-01-26 Electron beam exposure apparatus and device manufacturing method

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Families Citing this family (12)

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CN100524026C (en) * 2002-10-25 2009-08-05 迈普尔平版印刷Ip有限公司 Lithography system
JP5844269B2 (en) * 2009-10-26 2016-01-13 マッパー・リソグラフィー・アイピー・ビー.ブイ. Charged particle multiple beamlet lithography system with adjustment device
JP2012023316A (en) * 2010-07-16 2012-02-02 Canon Inc Charged particle beam drawing apparatus and method of manufacturing article
JP2013546180A (en) * 2010-10-26 2013-12-26 マッパー・リソグラフィー・アイピー・ビー.ブイ. Modulator and charged particle multi-beam lithography system using the same
US8558196B2 (en) * 2010-11-13 2013-10-15 Mapper Lithography Ip B.V. Charged particle lithography system with aperture array cooling
JP5253532B2 (en) * 2011-03-01 2013-07-31 キヤノン株式会社 Deflector array, deflector array manufacturing method, drawing apparatus, and article manufacturing method
JP6038882B2 (en) * 2011-04-20 2016-12-07 マッパー・リソグラフィー・アイピー・ビー.ブイ. Optical fiber constructs and methods of forming such constructs
JP2013008878A (en) * 2011-06-24 2013-01-10 Canon Inc Drawing device, manufacturing method of article, and processing unit
JP5963139B2 (en) * 2011-10-03 2016-08-03 株式会社Param Electron beam drawing method and drawing apparatus
JP6847886B2 (en) * 2018-03-20 2021-03-24 株式会社東芝 Charged particle beam deflection device
JP7186739B2 (en) * 2020-03-11 2022-12-09 株式会社東芝 Charged particle beam deflection device
CN116413856B (en) * 2023-06-12 2024-01-09 之江实验室 End face coupler and preparation method thereof

Family Cites Families (7)

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JPS57204131A (en) * 1981-06-10 1982-12-14 Toshiba Mach Co Ltd Electron-ray drawing device
JPH0582069A (en) * 1991-09-25 1993-04-02 Hitachi Ltd Electron beam drawing device
JP3191998B2 (en) * 1992-09-01 2001-07-23 富士ゼロックス株式会社 Wavelength multiplexing transceiver for optical communication
JP2001126972A (en) * 1999-10-25 2001-05-11 Hitachi Ltd Electron beam drawing system and drawing method
US20020145113A1 (en) * 2001-04-09 2002-10-10 Applied Materials, Inc. Optical signal transmission for electron beam imaging apparatus
CN100524026C (en) * 2002-10-25 2009-08-05 迈普尔平版印刷Ip有限公司 Lithography system
DE602004010824T2 (en) * 2003-07-30 2008-12-24 Mapper Lithography Ip B.V. MODULATOR CIRCUIT

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