JP2006202842A5 - - Google Patents
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- Publication number
- JP2006202842A5 JP2006202842A5 JP2005010512A JP2005010512A JP2006202842A5 JP 2006202842 A5 JP2006202842 A5 JP 2006202842A5 JP 2005010512 A JP2005010512 A JP 2005010512A JP 2005010512 A JP2005010512 A JP 2005010512A JP 2006202842 A5 JP2006202842 A5 JP 2006202842A5
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- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2005010512A JP4890765B2 (ja) | 2005-01-18 | 2005-01-18 | 半導体装置及びその製造方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2005010512A JP4890765B2 (ja) | 2005-01-18 | 2005-01-18 | 半導体装置及びその製造方法 |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2006202842A JP2006202842A (ja) | 2006-08-03 |
JP2006202842A5 true JP2006202842A5 (ru) | 2007-12-27 |
JP4890765B2 JP4890765B2 (ja) | 2012-03-07 |
Family
ID=36960593
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2005010512A Expired - Fee Related JP4890765B2 (ja) | 2005-01-18 | 2005-01-18 | 半導体装置及びその製造方法 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP4890765B2 (ru) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CA2740223A1 (en) * | 2008-11-05 | 2010-05-14 | Semisouth Laboratories, Inc. | Vertical junction field effect transistors having sloped sidewalls and methods of making |
JP2010147405A (ja) * | 2008-12-22 | 2010-07-01 | Renesas Technology Corp | 半導体装置およびその製造方法 |
JP5607947B2 (ja) * | 2010-02-17 | 2014-10-15 | ルネサスエレクトロニクス株式会社 | 半導体装置およびその製造方法 |
JP5561343B2 (ja) * | 2012-11-05 | 2014-07-30 | 富士電機株式会社 | 炭化珪素半導体装置の製造方法 |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2692036B2 (ja) * | 1995-05-22 | 1997-12-17 | 財団法人半導体研究振興会 | 静電誘導トランジスタおよびその製造方法 |
JP2003069039A (ja) * | 2001-08-29 | 2003-03-07 | Denso Corp | 炭化珪素半導体装置およびその製造方法 |
JP4153811B2 (ja) * | 2002-03-25 | 2008-09-24 | 株式会社東芝 | 高耐圧半導体装置及びその製造方法 |
JP2004134547A (ja) * | 2002-10-10 | 2004-04-30 | Hitachi Ltd | 半導体装置 |
-
2005
- 2005-01-18 JP JP2005010512A patent/JP4890765B2/ja not_active Expired - Fee Related
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