JP2006186349A5 - - Google Patents
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- Publication number
- JP2006186349A5 JP2006186349A5 JP2005349353A JP2005349353A JP2006186349A5 JP 2006186349 A5 JP2006186349 A5 JP 2006186349A5 JP 2005349353 A JP2005349353 A JP 2005349353A JP 2005349353 A JP2005349353 A JP 2005349353A JP 2006186349 A5 JP2006186349 A5 JP 2006186349A5
- Authority
- JP
- Japan
- Prior art keywords
- region
- substrate
- semiconductor
- manufacturing
- impurity element
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
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- 239000004065 semiconductor Substances 0.000 claims 20
- 239000000758 substrate Substances 0.000 claims 14
- 238000004519 manufacturing process Methods 0.000 claims 10
- 238000000034 method Methods 0.000 claims 9
- 239000012535 impurity Substances 0.000 claims 8
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims 2
- 239000000919 ceramic Substances 0.000 claims 2
- 239000013078 crystal Substances 0.000 claims 2
- 230000001678 irradiating effect Effects 0.000 claims 2
- 229910052594 sapphire Inorganic materials 0.000 claims 2
- 239000010980 sapphire Substances 0.000 claims 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims 1
- 229910052779 Neodymium Inorganic materials 0.000 claims 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims 1
- 229910004283 SiO 4 Inorganic materials 0.000 claims 1
- 229910052769 Ytterbium Inorganic materials 0.000 claims 1
- 229910052786 argon Inorganic materials 0.000 claims 1
- 229910052785 arsenic Inorganic materials 0.000 claims 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 claims 1
- 229910052796 boron Inorganic materials 0.000 claims 1
- 229910052804 chromium Inorganic materials 0.000 claims 1
- 239000002019 doping agent Substances 0.000 claims 1
- 229910052732 germanium Inorganic materials 0.000 claims 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims 1
- 239000011521 glass Substances 0.000 claims 1
- 229910052743 krypton Inorganic materials 0.000 claims 1
- DNNSSWSSYDEUBZ-UHFFFAOYSA-N krypton atom Chemical compound [Kr] DNNSSWSSYDEUBZ-UHFFFAOYSA-N 0.000 claims 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims 1
- 229910052698 phosphorus Inorganic materials 0.000 claims 1
- 239000011574 phosphorus Substances 0.000 claims 1
- 239000010453 quartz Substances 0.000 claims 1
- 229910052704 radon Inorganic materials 0.000 claims 1
- SYUHGPGVQRZVTB-UHFFFAOYSA-N radon atom Chemical compound [Rn] SYUHGPGVQRZVTB-UHFFFAOYSA-N 0.000 claims 1
- SBIBMFFZSBJNJF-UHFFFAOYSA-N selenium;zinc Chemical compound [Se]=[Zn] SBIBMFFZSBJNJF-UHFFFAOYSA-N 0.000 claims 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims 1
- 229920003002 synthetic resin Polymers 0.000 claims 1
- 239000000057 synthetic resin Substances 0.000 claims 1
- 229910052724 xenon Inorganic materials 0.000 claims 1
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 claims 1
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2005349353A JP4999323B2 (ja) | 2004-12-03 | 2005-12-02 | 半導体装置の作製方法 |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2004352073 | 2004-12-03 | ||
| JP2004352073 | 2004-12-03 | ||
| JP2005349353A JP4999323B2 (ja) | 2004-12-03 | 2005-12-02 | 半導体装置の作製方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2006186349A JP2006186349A (ja) | 2006-07-13 |
| JP2006186349A5 true JP2006186349A5 (https=) | 2008-10-30 |
| JP4999323B2 JP4999323B2 (ja) | 2012-08-15 |
Family
ID=36739188
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2005349353A Expired - Fee Related JP4999323B2 (ja) | 2004-12-03 | 2005-12-02 | 半導体装置の作製方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP4999323B2 (https=) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7812283B2 (en) | 2004-03-26 | 2010-10-12 | Semiconductor Energy Laboratory Co., Ltd. | Laser irradiation method, laser irradiation apparatus, and method for fabricating semiconductor device |
| US8395084B2 (en) | 2005-05-02 | 2013-03-12 | Semiconductor Energy Laboratory Co., Ltd. | Laser irradiation apparatus and laser irradiation method |
| JP2011086728A (ja) | 2009-10-14 | 2011-04-28 | Renesas Electronics Corp | 半導体装置およびその製造方法 |
| JP2015204351A (ja) * | 2014-04-14 | 2015-11-16 | セイコーエプソン株式会社 | 感光膜の設置方法、半導体装置の製造方法、電気光学装置および電子機器 |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6346774A (ja) * | 1986-08-15 | 1988-02-27 | Toshiba Corp | 半導体装置の製造方法 |
| JP2001338894A (ja) * | 2000-05-26 | 2001-12-07 | Matsushita Electric Ind Co Ltd | 固体試料のアニール方法および半導体不純物ドーピング層形成方法 |
| JP3904936B2 (ja) * | 2001-03-02 | 2007-04-11 | 富士通株式会社 | 半導体装置の製造方法 |
| JP2003282697A (ja) * | 2002-03-26 | 2003-10-03 | Mitsubishi Electric Corp | 半導体装置の製造方法 |
| JP2004063924A (ja) * | 2002-07-31 | 2004-02-26 | Mitsubishi Heavy Ind Ltd | レーザアニール方法及び装置 |
| JP4307817B2 (ja) * | 2002-10-29 | 2009-08-05 | 住友重機械工業株式会社 | 半導体装置の製造方法 |
| JP4503344B2 (ja) * | 2003-04-21 | 2010-07-14 | 株式会社半導体エネルギー研究所 | ビーム照射装置および半導体装置の作製方法 |
| JP2004342875A (ja) * | 2003-05-16 | 2004-12-02 | Fuji Photo Film Co Ltd | レーザアニール装置 |
-
2005
- 2005-12-02 JP JP2005349353A patent/JP4999323B2/ja not_active Expired - Fee Related
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